【０００１】[0001]
【発明の属する技術分野】本発明は、半導体素子、液晶
ディスプレイパネル或いは太陽電池などの製造に際し
て、被処理基板にドライエッチング、ＣＶＤ又はスパッ
タなどの表面処理を施す為に使用される真空処理装置に
おいて、表面処理が終了したときに基板保持台上に静電
吸着している被処理基板を基板処理台から剥がして取り
外す基板取り外し制御方法及びその基板取り外し制御方
法に適した構成を備えた真空処理装置及び上記基板取り
外し制御方法を使用する表面処理方法に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum processing apparatus used for subjecting a substrate to be processed to a surface treatment such as dry etching, CVD or sputtering when manufacturing a semiconductor device, a liquid crystal display panel or a solar cell. And a substrate removal control method for removing and removing a substrate to be processed electrostatically adsorbed on a substrate holding table from the substrate processing table when the surface processing is completed, and a vacuum processing apparatus having a configuration suitable for the substrate removal control method And a surface treatment method using the substrate removal control method.
【０００２】[0002]
【従来の技術】近年、プラズマ処理装置では、デバイス
の高機能化とその処理コストの低減のために、高精度
化、高速化、大面積化及び低ダメージ化を実現するため
の取り組みが盛んに行われている。なかでも、成膜にお
いては基板内の膜質の均一化を得るために、また、微細
加工に用いられるドライエッチングにおいては寸法精度
の確保のために、それぞれ被処理基板の温度をその面内
全体にわたり均一に、且つ精密に制御することが特に要
求されている。この基板温度を制御する手段として、ヘ
リウムガスなどの不活性の伝熱ガスを利用したプラズマ
処理装置が使用され始めている（特開平４−１００２５
７号公報参照）。2. Description of the Related Art In recent years, in a plasma processing apparatus, efforts have been made actively to achieve high precision, high speed, large area and low damage in order to enhance the functionality of the device and reduce the processing cost. Is being done. In particular, in order to obtain uniform film quality in the substrate during film formation, and to secure dimensional accuracy in dry etching used for microfabrication, the temperature of the substrate to be processed is set over the entire surface thereof. There is a particular need for uniform and precise control. As a means for controlling the substrate temperature, a plasma processing apparatus using an inert heat transfer gas such as helium gas has begun to be used (Japanese Patent Laid-Open No. 4-10025).
No. 7).
【０００３】しかし、内部に静電吸着電極が埋設された
基板保持台上に戴置した被処理基板を、直流電圧が印加
された静電吸着電極により静電吸着して固定した状態に
おいて、被処理基板に対しプラズマ処理を施す装置にお
いて、以下のような問題がある。プラズマによる処理終
了後、静電吸着電極への直流電圧の供給を遮断しても、
静電吸着電極の表面の絶縁層に電荷が残留し、また、場
合によっては絶縁性の被処理基板に帯電電荷が残留す
る。このため、被処理基板が静電吸着電極に吸着した状
態に保持され続けるので、被処理基板は、搬送アームな
どに移載するための突き上げ装置で突き上げられた場合
に、静電吸着電極から剥離することができなかったり、
破損したり、飛び跳ねて次工程への搬送が不能となった
りすることがある。そこで、プラズマ処理が終了した時
点で、直流電源から静電吸着電極への印加電圧の極性を
反転させることにより、静電吸着電極の残留電荷を打ち
消したのちに、被処理基板を突き上げ装置による突き上
げ力で静電吸着電極から突き上げて剥離し、次工程へ搬
送するようにしている。However, in a state where a substrate to be processed placed on a substrate holding table in which an electrostatic chucking electrode is buried is electrostatically attracted and fixed by an electrostatic chucking electrode to which a DC voltage is applied, the substrate to be processed is fixed. An apparatus for performing plasma processing on a processing substrate has the following problems. After the plasma treatment, even if the supply of DC voltage to the electrostatic chucking electrode is cut off,
Electric charges remain on the insulating layer on the surface of the electrostatic attraction electrode, and in some cases, charged electric charges remain on the insulating substrate to be processed. For this reason, the substrate to be processed is continuously held in a state of being attracted to the electrostatic attraction electrode, so that the substrate to be processed is peeled off from the electrostatic attraction electrode when it is pushed up by a push-up device for transferring to a transfer arm or the like. I ca n’t do it,
In some cases, the sheet may be damaged, or may jump and become unable to be transported to the next step. Therefore, when the plasma processing is completed, the polarity of the voltage applied from the DC power supply to the electrostatic attraction electrode is inverted to cancel the residual charge of the electrostatic attraction electrode, and then the substrate to be processed is pushed up by the pushing up device. They are lifted up from the electrostatic attraction electrodes by force, peeled off, and transported to the next process.
【０００４】ところが、上述の静電吸着電極に印加する
直流電圧の極性を反転させて除電する方法では、残留電
荷を過不足かく完全に除去することが困難で、残留電荷
が残ったり、逆極性に帯電させてしまったりして、被処
理基板を静電吸着電極から確実に剥離できないことがあ
る。特に基板保持台の外周部は、プラズマ処理による電
荷の帯電量が多いため、突き上げ力による静電吸着電極
からの剥離はできても被処理基板の外周端面の一部が磁
石のように基板保持台にくっつき、被処理基板が片持ち
で突き上げられてしまうことがある。However, in the above-described method of removing a charge by inverting the polarity of the DC voltage applied to the electrostatic attraction electrode, it is difficult to completely or completely remove the residual charge, and the residual charge remains or the reverse polarity occurs. In some cases, the substrate to be processed cannot be reliably separated from the electrostatic chucking electrode. In particular, the outer peripheral portion of the substrate holding table has a large amount of electric charge due to the plasma processing. Therefore, even if the outer peripheral portion of the substrate to be processed can be separated from the electrostatic attraction electrode by a pushing force, a portion of the outer peripheral end surface of the substrate to be processed is held like a magnet The substrate to be processed may stick to the table and be pushed up with a cantilever.
【０００５】このような状態で突き上げ装置により被処
理基板を突き上げてしまうと、被処理基板には、損傷、
次工程への搬送不能、搬送姿勢の不良といった搬送トラ
ブルがあり、信頼性に欠ける。If the substrate to be processed is pushed up by the push-up device in such a state, the substrate to be processed is damaged,
There are transport troubles such as inability to transport to the next process and defective transport posture, and lacks reliability.
【０００６】そこで、本出願人は、表面処理済みの基板
を、静電吸着電極に対する静電吸着力の残留状態に応じ
て適時に無理なく突き上げて静電吸着電極からスムーズ
に剥離させることのできる基板の取り扱い方法を先に提
案している（特願平１０−６１３１８号）。このプラズ
マ処理装置における基板の取り扱い方法について、図３
を参照しながら簡単に説明する。なお、図３において、
符号を付しながら説明をしていない部材などについて
は、図１と同様である。Therefore, the applicant of the present invention can smoothly lift the surface-treated substrate appropriately and appropriately from the electrostatic attraction electrode according to the residual state of the electrostatic attraction force to the electrostatic attraction electrode. A method of handling a substrate has been proposed previously (Japanese Patent Application No. 10-61318). FIG. 3 shows a method of handling a substrate in this plasma processing apparatus.
This will be briefly described with reference to FIG. In FIG. 3,
The members and the like which are not described with reference numerals are the same as those in FIG.
【０００７】基板保持台３上に戴置された被処理基板４
は、基板保持台３内に埋設された静電吸着電極を兼ねる
一対の内部電極２７Ａ、２７Ｂに正極及び負極の直流電
源８、９から直流電圧が印加されることにより、基板保
持台３の上面に静電吸着して保持され、この状態で表面
処理される。被処理基板４の表面処理が終了したのち
に、内部電極２７Ａ、２７Ｂに対する直流電源８、９か
らの電力供給が停止したときに、被処理基板４は、自体
のプラズマからの帯電及び基板保持台３の絶縁層表面と
の間に存在する残留電荷のために、静電的に基板保持台
３に吸着されている。ここで、被処理基板４に対し搬送
するために突き上げ装置１９で突き上げて基板保持台３
から剥離しようとすると、被処理基板４の搬送トラブル
や破損を招いてしまう。The substrate 4 to be processed placed on the substrate holder 3
The upper surface of the substrate holder 3 is applied by applying a DC voltage from the positive and negative DC power supplies 8 and 9 to a pair of internal electrodes 27A and 27B also serving as electrostatic attraction electrodes embedded in the substrate holder 3. Is held by electrostatic attraction, and surface treatment is performed in this state. When the supply of power from the DC power supplies 8 and 9 to the internal electrodes 27A and 27B is stopped after the surface treatment of the substrate to be processed 4 is completed, the substrate to be processed 4 is charged from its own plasma and the substrate holding table. 3 is electrostatically attracted to the substrate holder 3 due to residual charges existing between the substrate holder 3 and the insulating layer surface. Here, in order to transport the substrate 4 to be processed, the substrate holding table 3
If it is attempted to peel off from the substrate, a transport trouble or breakage of the processing target substrate 4 is caused.
【０００８】そこで、被処理基板４は、以下のような工
程を経て取り外す。すなわち、まず、初期設定として残
留電荷が無い場合に突き上げ装置１９により被処理基板
４を突き上げる。このとき、検出装置１２０には、真空
室１側が真空であるため大気側から押される力と、真空
室１と大気とをシールしているベローズ２２のバネ力
と、被処理基板４の重量により再現性のある力などの外
力が作用する。このデータをモニターし、データとして
制御回路１２１にて記憶しておく。初期設定値は再現性
が高いため、突き上げ装置１９を解体、再組立するまで
変更する必要はない。被処理基板４を基板保持台３に吸
着させた後、突き上げ装置１９の駆動源である直動モー
ター１２３を駆動させ被処理基板４を突き上げる。突き
上げ装置１９が被処理基板４と接触し、残留電荷のため
に吸着していると、検出装置１２０により初期設定値以
上の力を検知する。ここで、検出装置１２０は突き上げ
装置１９の中心軸と一軸上に固定されている装置であ
り、吸着力以外の外力を、確実に測定できるため、外力
分をオフセットしてやることにより、吸着力のみを極め
て良好に測定できる。今回は外力として、ベローズ２２
にかかる大気圧として６８．６Ｎ、基板４と、突き上げ
装置が接触しているときのベローズ２２のバネ力を１
５．７Ｎであったため、オフセットを８６．２Ｎとし
た。被処理基板４の破損防止のため基板材質のせん断応
力限界以下、今回は１９６Ｎを検知した時点にて制御回
路１２１にて突き上げを停止し、突き上げ装置１９を下
降させる。さらに突き上げ装置１９を上昇させ、同様の
動作を繰り返す。被処理基板４において、突き上げ装置
１９と接触している部分が徐々に基板保持台３より剥離
され、被処理基板４の裏面の接触部が徐々に減少するこ
とから、基板保持台３の表面の絶縁層表面と被処理基板
４との間の残留電荷も、被処理基板４裏面の残留Ｈｅガ
スを媒体として電気的に中和され、残留吸着が減少す
る。測力により搬送トラブル、被処理基板４の破損を起
こさない程度まで、残留吸着力が減少したら、今回は
９．８Ｎ以下にて、基板４のずれない最速の速度、例え
ば２０ｍｍ／秒にて突き上げる。Accordingly, the substrate 4 to be processed is removed through the following steps. That is, first, when there is no residual charge as an initial setting, the target substrate 4 is pushed up by the pushing-up device 19. At this time, the detection device 120 includes a force that is pressed from the atmosphere side because the vacuum chamber 1 side is vacuum, a spring force of the bellows 22 that seals the vacuum chamber 1 and the atmosphere, and a weight of the substrate 4 to be processed. External force such as reproducible force acts. This data is monitored and stored in the control circuit 121 as data. Since the initial set value is highly reproducible, there is no need to change the push-up device 19 until it is disassembled and reassembled. After the substrate to be processed 4 is attracted to the substrate holding table 3, the linear motor 123 as a driving source of the push-up device 19 is driven to push up the substrate to be processed 4. When the push-up device 19 comes into contact with the substrate to be processed 4 and is attracted by the residual charge, the detection device 120 detects a force equal to or more than the initial set value. Here, the detection device 120 is a device fixed on one axis with the central axis of the push-up device 19, and can reliably measure an external force other than the attraction force. Therefore, by offsetting the external force, only the attraction force can be measured. Very good measurement. This time, as external force, bellows 22
And the spring force of the bellows 22 when the push-up device is in contact with the substrate 4 is 18.6 N.
Since it was 5.7N, the offset was set to 86.2N. In order to prevent breakage of the substrate 4 to be processed, the control circuit 121 stops the push-up operation and lowers the push-up device 19 when 196 N is detected below the shear stress limit of the substrate material. Further, the push-up device 19 is raised, and the same operation is repeated. The portion of the substrate 4 to be processed that is in contact with the push-up device 19 is gradually peeled off from the substrate holder 3, and the contact portion on the back surface of the substrate 4 is gradually reduced. The residual charge between the surface of the insulating layer and the substrate to be processed 4 is also electrically neutralized by using the residual He gas on the rear surface of the substrate to be processed as a medium, and the residual adsorption is reduced. When the residual suction force is reduced to a level that does not cause a transport trouble or damage to the substrate 4 to be processed by the measuring force, this time, push up at 9.8 N or less, the fastest speed at which the substrate 4 does not shift, for example, 20 mm / sec. .
【０００９】その結果、残留吸着が解消した上で搬送す
るために、トラブルなく安定して基板４を搬送すること
ができる。As a result, the substrate 4 can be transported stably without any trouble since it is transported after the residual suction is eliminated.
【００１０】上記のプラズマ処理装置における被処理基
板４の取り外し方法は、被処理基板４を突き上げ装置１
９により突き上げる際に、被処理基板４の基板保持台３
への静電吸着力に関するデータを検出装置１２０などで
検出し、静電吸着力が初定値以上である場合に突き上げ
装置１９による突き上げ動作を規制しているので、被処
理基板４を吸着力の残留状態に応じて基板保持台３から
適時に無理なく突き上げて剥離でき、被処理基板４の破
損や搬送トラブルなどを確実に防止できる効果を奏する
ものである。In the above-described method for removing the substrate 4 in the plasma processing apparatus, the substrate 4 is
9, the substrate holder 3 of the substrate 4 to be processed
The data relating to the electrostatic attraction force to the substrate 4 is detected by the detection device 120 or the like, and when the electrostatic attraction force is equal to or more than the initial fixed value, the thrusting operation by the thrusting device 19 is regulated. In accordance with the residual state of the substrate, the substrate 4 can be lifted up from the substrate holding table 3 in a timely and natural manner, and the substrate 4 to be processed can be reliably prevented from being damaged or transported.
【００１１】[0011]
【発明が解決しようとする課題】ところが、実用化に際
しては、なお解消しなければならない問題が残存してい
る。すなわち、被処理基板４の基板保持台３に対する静
電吸着力は、被処理基板４の処理条件の相違によって強
く残留する場合があり、そのような場合、上記の被処理
基板４の取り外し方法では、突き上げ装置１９の昇降動
作の繰り返しによる被処理基板４への断続的な突き上げ
動作を継続して行わなければならず、被処理基板４を基
板保持台３から剥離するまでに相当の時間を必要とし、
生産性が低下してしまう。さらに、直動モーター１２３
にて突き上げる際、突き上げ速度を制御していないた
め、被処理基板４に機械的変形を加えることとなり、被
処理基板自体に物理的損傷がなくても、被処理基板上の
デバイスが電気的破壊を受ける。また、被処理基板４が
基板保持台３より剥離し、無負荷状態になった際、機械
的変形が元に戻り、被処理基板４の裏面のダストが被処
理基板４の表面側に回り込み歩留まりを落とす問題があ
った。However, in practical use, there still remains a problem that must be solved. That is, the electrostatic attraction force of the substrate to be processed 4 on the substrate holding table 3 may remain strongly due to the difference in the processing conditions of the substrate to be processed 4. It is necessary to continuously perform an intermittent push-up operation on the substrate 4 by repeating the raising and lowering operation of the push-up device 19, and it takes a considerable time until the substrate 4 is separated from the substrate holding table 3. age,
Productivity decreases. Further, the linear motor 123
When pushing up, the pushing speed is not controlled, so that the substrate 4 to be processed is mechanically deformed, and the device on the substrate to be processed is electrically damaged even if the substrate itself is not physically damaged. Receive. In addition, when the substrate 4 is separated from the substrate holder 3 and becomes a no-load state, the mechanical deformation returns to the original state, and dust on the back surface of the substrate 4 wraps around to the front side of the substrate 4 and yields. There was a problem of dropping.
【００１２】また、図４において、従来の基板保持台
は、被処理基板と接触する面において、中心部、外周部
とも均一な表面加工仕上げを行っていた。しかしながら
被処理基板の大型化（例えば液晶における片辺５００ｍ
ｍ以上のガラス基板、半導体における３００ｍｍ以上の
シリコンウエハ）において、基板保持台の外周部と、内
周部ではプラズマ処理による電荷の帯電量の差が大きい
ため、突き上げ力による静電吸着電極からの剥離はでき
ても、被処理基板の外周端面の一部が磁石のように基板
保持台にくっつき、このようになると吸着力はほとんど
検出されず、被処理基板が片持ちで突き上げられてしま
うことがある。In FIG. 4, the conventional substrate holding table has a uniform surface finish on both the central portion and the outer peripheral portion on the surface in contact with the substrate to be processed. However, the size of the substrate to be processed is increased (for example, 500 m on one side of liquid crystal)
m or more of a glass substrate or a silicon wafer of 300 mm or more in a semiconductor), since the difference in the amount of charge by the plasma processing is large between the outer peripheral portion and the inner peripheral portion of the substrate holding table, the force from the electrostatic attraction electrode due to the pushing-up force is large. Even if peeling is possible, part of the outer peripheral end surface of the substrate to be processed sticks to the substrate holding base like a magnet, and in this case, the suction force is hardly detected, and the substrate to be processed is pushed up with a cantilever. There is.
【００１３】そこで、本発明の目的は、基板保持台に静
電吸着している被処理基板を、これの破損や搬送トラブ
ルを防止しながら、安定、且つ、迅速に基板保持台から
剥離して取り外すことのできる基板取り外し制御方法及
びその基板取り外し制御方法に適した構成を有する真空
処理装置及び上記基板取り外し制御方法を使用する表面
処理方法を提供するものである。Accordingly, an object of the present invention is to stably and promptly peel off a substrate to be processed electrostatically attracted to a substrate holding table from the substrate holding table while preventing breakage or transport trouble thereof. An object of the present invention is to provide a method of controlling the removal of a substrate, a vacuum processing apparatus having a configuration suitable for the method of controlling the removal of a substrate, and a surface treatment method using the method of controlling the removal of a substrate.
【００１４】[0014]
【課題を解決するための手段】上記目的を達成するため
に、本発明は以下のように構成する。In order to achieve the above object, the present invention is configured as follows.
【００１５】本発明の第１態様によれば、真空室内の基
板保持台上に保持された被処理基板と上記基板保持台と
の間に基板温度制御用の伝熱ガスを供給しながら上記被
処理基板に対し表面処理を行ったのち、その表面処理に
伴って上記被処理基板に生じた帯電による上記被処理基
板と上記基板保持台との静電吸着力を検出するため、上
記被処理基板を突き上げたときの突き上げ負荷を検出
し、上記検出された値に基き、上記被処理基板を突き上
げる突き上げ速度を制御することを特徴とする真空処理
装置の基板取り外し制御方法を提供する。According to the first aspect of the present invention, the heat transfer gas for controlling the temperature of the substrate is supplied between the substrate holding table and the substrate to be processed held on the substrate holding table in a vacuum chamber. After performing a surface treatment on the substrate to be processed, the substrate to be processed is detected in order to detect an electrostatic attraction force between the substrate to be processed and the substrate holding table due to charging generated on the substrate to be processed due to the surface treatment. A method of controlling the removal of a substrate of a vacuum processing apparatus, comprising: detecting a pushing load when pushing up a substrate; and controlling a pushing speed of pushing up the substrate to be processed based on the detected value.
【００１６】本発明の第２態様によれば、上記検出され
た値に基き、上記被処理基板を突き上げる際、突き上げ
負荷が所定の荷重以下となるように上記被処理基板の上
記突き上げ速度を制御する第１の態様に記載の真空処理
装置の基板取り外し制御方法を提供する。According to the second aspect of the present invention, when the substrate to be processed is pushed up based on the detected value, the pushing-up speed of the substrate to be treated is controlled so that the pushing load is equal to or less than a predetermined load. According to another aspect of the present invention, there is provided a method for controlling removal of a substrate of a vacuum processing apparatus according to the first aspect.
【００１７】本発明の第３態様によれば、上記検出され
た値が９８０Ｐａ以下となるよう、上記被処理基板を突
き上げる上記突き上げ速度を２ｍｍ／秒以下の速度に制
御する第１の態様に記載の真空処理装置の基板取り外し
制御方法を提供する。According to a third aspect of the present invention, there is provided the first aspect in which the thrusting speed for pushing up the substrate to be processed is controlled to a speed of 2 mm / sec or less so that the detected value is 980 Pa or less. To provide a method for controlling the removal of a substrate in a vacuum processing apparatus.
【００１８】本発明の第４態様によれば、真空室内の基
板保持台上に保持された被処理基板と上記基板保持台と
の間に基板温度制御用の伝熱ガスを供給しながら上記被
処理基板に対し表面処理を行ったのち、その表面処理に
伴って上記被処理基板に生じた帯電による上記被処理基
板と上記基板保持台との静電吸着力を、上記被処理基板
を突き上げたときの突き上げ負荷に基づいて検出する検
出装置と、上記検出装置により検出された値に基き、上
記被処理基板を突き上げる突き上げ速度を制御する制御
装置とを備えることを特徴とする真空処理装置を提供す
る。According to the fourth aspect of the present invention, the heat transfer gas for controlling the temperature of the substrate is supplied between the substrate to be processed held on the substrate support in the vacuum chamber and the substrate support. After performing the surface treatment on the substrate to be processed, the electrostatic attraction between the substrate to be processed and the substrate holding table due to the charge generated on the substrate to be processed due to the surface treatment pushed up the substrate to be processed. A vacuum processing apparatus comprising: a detection device that detects a push-up load at the time; and a control device that controls a push-up speed of pushing up the substrate to be processed based on a value detected by the detection device. I do.
【００１９】本発明の第５態様によれば、上記制御装置
は、上記検出された値に基き、上記被処理基板を突き上
げる際、突き上げ負荷が所定の荷重以下となるように上
記被処理基板の上記突き上げ速度を制御する第４の態様
に記載の真空処理装置を提供する。According to a fifth aspect of the present invention, the control device, based on the detected value, pushes up the substrate to be processed so that the thrust load is equal to or less than a predetermined load. A vacuum processing apparatus according to a fourth aspect for controlling the pushing speed is provided.
【００２０】本発明の第６態様によれば、上記制御装置
は、上記検出された値が９８０Ｐａ以下となるよう、上
記被処理基板を突き上げる上記突き上げ速度を２ｍｍ／
秒以下の速度に制御する第４の態様に記載の真空処理装
置を提供する。According to a sixth aspect of the present invention, the control device sets the thrust speed at which the substrate to be processed is thrust up to 2 mm / mm so that the detected value is 980 Pa or less.
A vacuum processing apparatus according to a fourth aspect, wherein the speed is controlled to be equal to or less than a second.
【００２１】本発明の第７態様によれば、真空室内の基
板保持台上に保持された被処理基板と上記基板保持台と
の間に基板温度制御用の伝熱ガスを供給しながら上記被
処理基板に対し表面処理を行ったのち、その表面処理に
伴って上記被処理基板に生じた帯電による上記被処理基
板と上記基板保持台との静電吸着力を使用する静電吸着
装置を有する真空処理装置であって、上記基板保持台の
基板設置面の一部に気孔状の凹穴を備えることを特徴と
する真空処理装置用静電吸着装置を提供する。According to the seventh aspect of the present invention, the heat transfer gas for controlling the substrate temperature is supplied between the substrate to be processed held on the substrate holder in the vacuum chamber and the substrate holder. After performing a surface treatment on the substrate to be processed, the apparatus has an electrostatic attraction device that uses an electrostatic attraction force between the substrate to be processed and the substrate holding table due to charging generated on the substrate to be processed with the surface treatment. There is provided an electrostatic attraction device for a vacuum processing apparatus, comprising a pore-shaped concave hole in a part of a substrate mounting surface of the substrate holding table.
【００２２】本発明の第８態様によれば、上記気孔状の
凹穴は上記基板保持台の上記基板設置面の外周部に備え
られる第４〜６のいずれか１つの態様に記載の真空処理
装置用静電吸着装置を提供する。According to an eighth aspect of the present invention, there is provided the vacuum processing apparatus according to any one of the fourth to sixth aspects, wherein the pore-shaped concave hole is provided on an outer peripheral portion of the substrate mounting surface of the substrate holding table. Provided is an electrostatic attraction device for a device.
【００２３】本発明の第９態様によれば、上記真空室内
の上記基板保持台上に上記被処理基板が静電吸着により
保持され、上記被処理基板と上記基板保持台との間に基
板温度制御用の伝熱ガスを供給しながら、反応ガスが供
給された真空雰囲気内でプラズマを発生させて上記被処
理基板に対し表面処理を行い、表面処理が終了後、第１
〜３のいずれか１つの態様に記載の真空処理装置の基板
取り外し制御方法を使用して、上記基板保持台上に静電
吸着されている上記被処理基板を突き上げて上記被処理
基板を上記基板処理台から取り外すようにした表面処理
方法を提供する。According to a ninth aspect of the present invention, the substrate to be processed is held on the substrate holder in the vacuum chamber by electrostatic attraction, and a substrate temperature is held between the substrate to be processed and the substrate holder. While supplying a control heat transfer gas, plasma is generated in a vacuum atmosphere to which the reaction gas is supplied to perform a surface treatment on the substrate to be processed.
The substrate to be processed, which is electrostatically adsorbed on the substrate holding table, is lifted up by using the substrate removal control method of the vacuum processing apparatus according to any one of the aspects 1 to 3, and the substrate to be processed is mounted on the substrate. Provided is a surface treatment method that is detached from a processing table.
【００２４】[0024]
【発明の実施の形態】以下、本発明の好ましい実施の形
態について図面を参照しながら説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below with reference to the drawings.
【００２５】図１は本発明の一実施の形態に係る真空処
理装置の一例である反応性イオンエッチング型のドライ
エッチング装置の断面構成図を示す。FIG. 1 is a sectional view showing a reactive ion etching type dry etching apparatus as an example of a vacuum processing apparatus according to an embodiment of the present invention.
【００２６】図１において、１は真空排気装置２と反応
ガス供給装置１３を有した真空室、４は被処理基板の一
例としてのＳｉウェハー、３は被処理基板４を載置して
静電吸着力を利用して保持するとともに基板保持表面が
絶縁層である静電吸着型の基板保持台で、一例として厚
さ５ｍｍのアルミナ誘電体部２９と内部に冷却水路（図
示せず）を有するアルミニウム製ベース部３０より構成
され、アルミナ誘電体２９の表面から例えば５００μｍ
の内部に例えばタングステンからなる２対の大略半円形
状の静電吸着用内部電極２７Ａ，２７Ｂを内蔵してい
る。内部電極２７Ａには被処理基板４に正の電圧を印加
し、内部電極２７Ｂには被処理基板４に負の電圧を印加
する構成である。In FIG. 1, reference numeral 1 denotes a vacuum chamber having an evacuation device 2 and a reaction gas supply device 13; 4, an Si wafer as an example of a substrate to be processed; A substrate holding table of an electrostatic suction type in which a substrate holding surface is an insulating layer and is held by utilizing an attraction force, and has, for example, an alumina dielectric portion 29 having a thickness of 5 mm and a cooling water passage (not shown) inside. It is composed of an aluminum base portion 30 and is, for example, 500 μm from the surface of the alumina dielectric 29.
, Two pairs of substantially semicircular internal electrodes 27A and 27B made of, for example, tungsten made of tungsten. The configuration is such that a positive voltage is applied to the substrate 4 to be processed to the internal electrode 27A, and a negative voltage is applied to the substrate 4 to be processed to the internal electrode 27B.
【００２７】基板保持台３の表面部の構成の一部を断面
図で図２で示す。図２において、２９Ａは基板保持台３
における基板４との接触部である。２９Ｄは基板保持台
３における基板４が接触していない面で凹形状となって
いる凹溝部である。FIG. 2 is a sectional view showing a part of the structure of the surface portion of the substrate holding table 3. In FIG. 2, reference numeral 29A denotes the substrate holder 3.
Is a contact portion with the substrate 4 in FIG. Reference numeral 29D denotes a concave groove portion of the substrate holding table 3 which is concave on a surface of the substrate holding table 3 where the substrate 4 is not in contact.
【００２８】また、図１において、７は高周波フィルタ
ー、８は正極の直流電源、９は負極の直流電源、１７は
コンデンサ、１４は例えば１３．５６ＭＨｚの高周波電
源、１８は接地された上部電極である。１１は基板保持
台３の表面と基板４の裏面との間隙へ伝熱ガスの一例で
あるＨｅガスの供給装置であり、バルブ１１ｂと流量コ
ントローラ１１ａとを備えている。１２は伝熱ガスの基
板４の裏面での圧力監視制御装置であり、圧力計１２ａ
と絞り弁１２ｂとを備えている。２８は基板冷却制御部
であり、圧力計１２ａからの伝熱ガスの基板４の裏面で
の圧力情報と、流量コントローラ１１ａからのＨｅガス
の供給流量とを基に、基板４の冷却状態を適切に制御す
るようにしている。In FIG. 1, 7 is a high frequency filter, 8 is a positive DC power supply, 9 is a negative DC power supply, 17 is a capacitor, 14 is a 13.56 MHz high frequency power supply, for example, and 18 is a grounded upper electrode. is there. Reference numeral 11 denotes a supply device for supplying He gas, which is an example of a heat transfer gas, to a gap between the front surface of the substrate holding table 3 and the back surface of the substrate 4, and includes a valve 11b and a flow controller 11a. Reference numeral 12 denotes a pressure monitoring and control device for the heat transfer gas on the back surface of the substrate 4, and a pressure gauge 12a.
And a throttle valve 12b. Reference numeral 28 denotes a substrate cooling control unit that appropriately controls a cooling state of the substrate 4 based on pressure information of the heat transfer gas on the back surface of the substrate 4 from the pressure gauge 12a and a supply flow rate of He gas from the flow rate controller 11a. To control.
【００２９】基板保持台３の内部には、基板搬送のため
被処理基板４を基板保持台３から上昇させるための被処
理基板４の突き上げ装置１９を有している。突き上げ装
置１９は、基板保持台３を貫通する複数の突き上げピン
１９ａ，…，１９ａと、各突き上げピン１９ａの下端に
連結されて全ての突き上げピン１９ａ，…，１９ａを一
斉に同期して上下動させる駆動部材１９ｂと、駆動部材
１９ｂを昇降させる駆動源となる加変速直動モーター２
３とを備えている。全ての突き上げピン１９ａ，…，１
９ａと駆動部材１９ｂの上部は、真空室１と連通しかつ
真空室１の下部の突き出した突き出し部３１内に配置さ
れているが、駆動部材１９ｂの下部は、真空室１の突き
出し部３１の外部に露出してベローズ２２にて大気より
シールされており、駆動部材１９ｂの下端が駆動源とな
る直動モーター２３と直結されている。直動モーター２
３には検出部２０が接続されている。検出部２０は、突
き上げピン１９ａ，…，１９により被処理基板４に作用
する荷重値を検出する。また、直動モーター２３の駆動
を制御する直動モーター駆動制御部２１ｂと、検出部２
０で検出された、突き上げピン１９ａ，…，１９により
被処理基板４に作用する荷重値の情報を記録する検出情
報記録部２１ａとより突き上げ装置制御部２１を構成す
る。突き上げ装置制御部２１は、検出部２０で検出され
て検出情報記録部２１ａに記録された情報を基に、直動
モーター駆動制御部２１ｂを介して直動モーター２３を
駆動して、駆動部材１９ｂを介して全ての突き上げピン
１９ａ，…，１９ａを一斉に上下動させる。Inside the substrate holder 3, there is provided a device 19 for lifting the substrate 4 to lift the substrate 4 from the substrate holder 3 for transporting the substrate. The push-up device 19 moves a plurality of push-up pins 19a,..., 19a penetrating the substrate holding table 3 and all push-up pins 19a,. Drive member 19b to be driven, and a variable speed linear motor 2 serving as a drive source for moving the drive member 19b up and down
3 is provided. All push-up pins 19a, ..., 1
9a and the upper part of the driving member 19b communicate with the vacuum chamber 1 and are disposed in the protruding part 31 protruding from the lower part of the vacuum chamber 1, but the lower part of the driving member 19b is formed in the protruding part 31 of the vacuum chamber 1. It is exposed to the outside and is sealed from the atmosphere by a bellows 22, and the lower end of the driving member 19b is directly connected to a linear motor 23 serving as a driving source. Linear motor 2
A detection unit 20 is connected to 3. The detection unit 20 detects a load value acting on the substrate 4 to be processed by the push-up pins 19a,. A linear motor drive controller 21b for controlling the driving of the linear motor 23;
A push-up device control unit 21 is configured by a detection information recording unit 21a that records information on a load value acting on the substrate 4 to be processed by the push-up pins 19a,. The push-up device control section 21 drives the linear motor 23 via the linear motor drive control section 21b based on the information detected by the detection section 20 and recorded in the detection information recording section 21a, and the drive member 19b All the push-up pins 19a,...
【００３０】以上のように構成された、ドライエッチン
グ装置について、図１を用いてその動作を説明する。The operation of the dry etching apparatus configured as described above will be described with reference to FIG.
【００３１】まず、真空室１を真空排気装置２により真
空排気し、基板保持台３上に被処理基板４を設置し、基
板保持台３内に位置する一対の内部電極２７Ａ，２７Ｂ
へ高周波フィルター７，７を通して、それぞれ、直流電
源８，９から正、負の直流電圧を印加する。この結果、
基板４の中央部及び外周部とも基板保持台３に静電吸着
する。First, the vacuum chamber 1 is evacuated by the evacuation device 2, the substrate 4 to be processed is set on the substrate holder 3, and a pair of internal electrodes 27 A, 27 B located in the substrate holder 3.
The positive and negative DC voltages are applied from DC power supplies 8 and 9 through high frequency filters 7 and 7, respectively. As a result,
The central portion and the outer peripheral portion of the substrate 4 are also electrostatically attracted to the substrate holding table 3.
【００３２】さらに、次の動作として、反応ガス供給装
置１３より反応ガスであるＣＦ4を３０ｃｃ／分、Ｏ2を
５ｃｃ／分同時に導入し、真空室１内を２０Ｐａに調圧
し、高周波電源１４から高周波電力を２分岐させた後に
直流電圧をカットするコンデンサ１７，１７を通して、
一対の内部電極２７Ａ，２７Ｂに供給することにより、
真空室１内でプラズマを発生させる。このようにして発
生したプラズマにより、被処理基板４に対して、被処理
基板４の裏面をＨｅで効率よく冷却しながら所望のドラ
イエッチングが達成される。エッチングが終了した後、
高周波電力、反応ガス及び、被処理基板４の裏面へのＨ
ｅの供給を停止し、一旦、真空排気装置２にて真空排気
を行いながら、直流電源８，９の出力を止める。Further, as the next operation, CF4 as a reaction gas is introduced simultaneously from the reaction gas supply device 30 at 30 cc / min and O2 at 5 cc / min, and the pressure in the vacuum chamber 1 is adjusted to 20 Pa. Through the capacitors 17, 17, which cut off the DC voltage after the RF power is branched into two from
By supplying to a pair of internal electrodes 27A and 27B,
Plasma is generated in the vacuum chamber 1. By the plasma thus generated, desired dry etching is achieved on the substrate 4 while efficiently cooling the back surface of the substrate 4 with He. After the etching is completed,
RF power, reaction gas, and H on the back surface of the substrate 4 to be processed
The supply of e is stopped, and the outputs of the DC power supplies 8 and 9 are stopped while the evacuation device 2 temporarily performs evacuation.
【００３３】この状態で、基板４は所望のエッチングが
行われた事になるが、基板４のプラズマからの帯電と、
基板保持台３の絶縁層表面と基板４の裏面との間に存在
する残留電荷のために、基板４が基板保持台３に対して
末だ吸着されたままとなっている。In this state, the substrate 4 has been subjected to the desired etching.
Due to the residual charge existing between the insulating layer surface of the substrate holder 3 and the back surface of the substrate 4, the substrate 4 is still attracted to the substrate holder 3.
【００３４】この状態のまま基板４を搬送しようとして
突き上げ装置１９の突き上げピン１９ａ，…，１９ａで
基板保持台３から離そうとすると、搬送トラブル、被処
理基板４の破損を起こしてしまう。そこで、本実施形態
では、このような問題を生じさせることなく基板保持台
３に静電吸着された被処理基板４を次工程などに搬送す
るため、突き上げ装置１９で基板保持台３から被処理基
板４を剥離する際、検出装置２０により、被処理基板４
に作用する荷重（突き上げ負荷）が９８０Ｐａ以下とな
るように、突き上げ装置１９の突き上げピン１９ａ，
…，１９により被処理基板４を突き上げる速度を２ｍｍ
／秒以下の速度に制御して行う。具体的には、突き上げ
ピン１９ａ，…，１９により被処理基板４に作用する荷
重値を検出部２０で検出しつつ、直動モーター駆動制御
部２１ｂにより加変速直動モーター２３を２ｍｍ／秒以
下の速度で駆動制御する。２ｍｍ／秒以下の速度で突き
上げピン１９ａ，…，１９を上昇させて、突き上げピン
１９ａ，…，１９により被処理基板４を基板保持台３か
ら剥離させれば、上記した問題を生じさせることがな
く、被処理基板４を基板保持台３から容易に剥離するこ
とができる。If the push-up pins 19a,..., 19a of the push-up device 19 try to separate the substrate 4 from the substrate holding table 3 in this state, a transfer trouble or damage to the substrate 4 to be processed occurs. Therefore, in the present embodiment, the substrate 4 electrostatically attracted to the substrate holder 3 is transported to the next step without causing such a problem. When the substrate 4 is peeled, the detection device 20 causes the substrate 4 to be processed.
The push-up pins 19a, 19a of the push-up device 19 are controlled so that the load (push-up load) acting on the
..., the speed at which the substrate to be processed 4 is pushed up is 2 mm.
Per second. Specifically, while the load acting on the substrate 4 to be processed is detected by the push-up pins 19a,..., 19 by the detector 20, the linear motor drive controller 21b controls the variable speed linear motor 23 to 2 mm / sec or less. Drive control at speed If the push-up pins 19a,..., 19 are raised at a speed of 2 mm / sec or less and the substrate 4 to be processed is separated from the substrate holding table 3 by the push-up pins 19a,. In addition, the substrate 4 to be processed can be easily peeled off from the substrate holder 3.
【００３５】なお、被処理基板４に作用する荷重（突き
上げ負荷）が９８０Ｐａ以下となるようにする理由は、
被処理基板４としてシリコンウェハーを使用する場合、
残留吸着されているシリコンウェハーを突き上げると
き、突き上げ力を、シリコンウェハーが破壊する応力す
なわちせん断応力限界以下とする必要がある。シリコン
ウェハーのせん断応力を１９６Ｎとして設定し、シリコ
ンウェハーの面積で除算すると、２７４４Ｐａとなり、
安全率を考慮して９８０Ｐａ以下トするのが好ましい。The reason why the load (push-up load) applied to the substrate 4 to be processed is 980 Pa or less is as follows.
When a silicon wafer is used as the substrate 4 to be processed,
When pushing up a silicon wafer that has been residually adsorbed, the pushing-up force must be equal to or less than the stress at which the silicon wafer breaks, that is, the shear stress limit. When the shear stress of the silicon wafer is set as 196N and divided by the area of the silicon wafer, it becomes 2744 Pa,
Preferably, the pressure is 980 Pa or less in consideration of the safety factor.
【００３６】一例として、被処理基板４として直径３０
０ｍｍのシリコンウエハを使用した際、突き上げ荷重が
６８６Ｐａ以下となるよう加変速直動モーター２３を
０．８ｍｍ／秒にて作動させ、荷重が３９２Ｐａ以下と
なったところで、２０ｍｍ／秒にて加変速直動モーター
２３を作動させれば、被処理基板を基板保持台から容易
に剥離することができるという良好な結果を得た。As an example, the substrate 4 to be processed has a diameter of 30.
When a 0 mm silicon wafer is used, the variable speed linear motor 23 is operated at 0.8 mm / sec so that the thrust load becomes 686 Pa or less, and when the load becomes 392 Pa or less, the speed is changed at 20 mm / sec. By operating the linear motor 23, a favorable result was obtained in that the substrate to be processed could be easily peeled off from the substrate holder.
【００３７】また、図２に示す通り、基板保持台３の外
周部の基板接触部２９Ａに、直径５μｍから５００μｍ
の気孔状の多数の凹穴２９Ｃ，…，２９Ｃを形成するこ
とにより、空間放電する面積を増加させることで、残留
電荷をさらに減少させるようにしてもよい。一般に、基
板保持台３の内周部よりも外周部に残留電荷が多く残る
ため、基板保持台３の外周部の基板接触部２９Ａに気孔
状の多数の凹穴２９Ｃ，…，２９Ｃを形成して空間放電
する面積を増加させて残留電荷を減らすようにすれば、
被処理基板４の外周部と内周部の残留吸着力の差を減少
させることができる。As shown in FIG. 2, a substrate contact portion 29A on the outer periphery of the substrate holder 3 has a diameter of 5 μm to 500 μm.
By forming a large number of pore-shaped concave holes 29C,..., 29C, the area of space discharge may be increased to further reduce the residual charge. Generally, since more residual charge remains on the outer peripheral portion than on the inner peripheral portion of the substrate holder 3, a large number of pore-shaped concave holes 29C,..., 29C are formed in the substrate contact portion 29A on the outer peripheral portion of the substrate holder 3. By increasing the area of space discharge to reduce the residual charge,
It is possible to reduce the difference in residual suction force between the outer peripheral portion and the inner peripheral portion of the substrate 4 to be processed.
【００３８】このようにして、残留吸着が解消した上
で、被処理基板４を搬送すれば、トラブルなく、安定し
て被処理基板４を搬送することができ、スループットの
向上が可能となる。In this manner, if the substrate 4 is transported after the residual adsorption is eliminated, the substrate 4 can be transported stably without any trouble, and the throughput can be improved.
【００３９】以上のように、本実施形態によれば、残留
吸着されている被処理基板４を決められた荷重の範囲内
にて突き上げることで、被処理基板４に機械的変形を加
えることなく、基板保持台３より剥離できるため、被処
理基板４上のデバイスが破壊されることもない。また、
被処理基板４が基板保持台３より剥離し、無負荷状態に
なった際の機械的変形小さいため、被処理基板４の裏面
のダストが被処理基板４の表面側に回り込むこともな
い。As described above, according to the present embodiment, the substrate 4 to be processed that is remaining adsorbed is pushed up within the predetermined load range, so that the substrate 4 to be processed is not mechanically deformed. Since the device can be separated from the substrate holder 3, the device on the substrate 4 to be processed is not broken. Also,
Since the substrate 4 to be processed is peeled off from the substrate holding table 3 and has a small mechanical deformation when no load is applied, dust on the back surface of the substrate 4 does not flow to the front side of the substrate 4.
【００４０】よって、静電吸着とプラズマ処理とを行う
ことにより、被処理基板４と基板保持台３の絶縁層表面
に発生する残留吸着を、被処理基板４を突き上げる力を
検知、制御しつつ、被処理基板４を基板保持台３の絶縁
層表面から離脱させることにより、被処理基板４にデバ
イスダメージや発塵を生じさせることなく、さらには、
被処理基板４の搬送トラブルなく、安定してプラズマ処
理することができる。Therefore, by performing the electrostatic attraction and the plasma processing, the residual attraction generated on the surface of the insulating layer of the substrate to be processed 4 and the substrate holder 3 is detected and controlled while detecting the force for pushing up the substrate to be processed 4. By removing the substrate to be processed 4 from the surface of the insulating layer of the substrate holder 3, the substrate to be processed 4 does not suffer from device damage or dust generation.
Plasma processing can be performed stably without any trouble in transporting the substrate 4 to be processed.
【００４１】なお、本実施形態において、静電吸着力
を、上記被処理基板４を突き上げたときの突き上げ負荷
に基づいて検出し、その検出値により、突き上げる速度
を変化させることと、基板保持台３の外周部に気孔状の
凹穴２９Ｃ，…，２９Ｃを形成することを同時に実施し
たが、もちろん、個別に実施しても、それぞれの効果を
奏することは当然である。In the present embodiment, the electrostatic attraction force is detected based on the lifting load when the processing target substrate 4 is lifted, and the lifting speed is changed based on the detected value. , 29C are simultaneously formed in the outer peripheral portion of the nozzle 3. However, it goes without saying that each effect can be obtained even if the holes are individually formed.
【００４２】また、上記実施形態は、被処理基板の一例
としてのシリコンウェハーについて説明したが、本発明
は、半導体ウェハーや液晶基板などにも適用することが
できる。例えば、シリコンウェハー以外の半導体ウェハ
ーや液晶基板などにも適用する場合には、被処理基板を
突き上げる突き上げ速度として、被処理基板のせん断応
力に安全率を考慮した設定値を採用するのが好ましい。In the above embodiment, a silicon wafer has been described as an example of a substrate to be processed. However, the present invention can be applied to a semiconductor wafer, a liquid crystal substrate, and the like. For example, when the present invention is applied to a semiconductor wafer other than a silicon wafer, a liquid crystal substrate, or the like, it is preferable to use a set value in which a safety factor is considered in consideration of a shear stress of a substrate to be processed, as a pushing speed for lifting the substrate to be processed.
【００４３】さらに、本実施形態において、基板裏面に
流すガスとして、Ｈｅガスを用いたがこれ以外の不活性
ガスや別のガスを用いても良い。Further, in this embodiment, He gas is used as the gas flowing on the back surface of the substrate, but other inert gas or another gas may be used.
【００４４】本実施形態において、基板裏面に流すＨｅ
ガスの配管系統は実施形態に記載の系統に限られるもの
でなく、基板裏面にガスを供給できれば、任意の配管系
統を用いても良い。In this embodiment, He flowing on the back surface of the substrate
The gas piping system is not limited to the system described in the embodiment, and any piping system may be used as long as gas can be supplied to the back surface of the substrate.
【００４５】本実施形態において、基板保持台３を一対
の内部電極２７Ａ，２７Ｂを有するいわゆる双極型の静
電吸着電極としたが、単極型の静電吸着電極に本発明を
用いても同様の効果が得られる。In the present embodiment, the substrate holding table 3 is a so-called bipolar electrostatic attraction electrode having a pair of internal electrodes 27A and 27B. However, the same applies to the case where the present invention is applied to a monopolar electrostatic attraction electrode. The effect of is obtained.
【００４６】本実施形態において、静電吸着型の基板保
持台としたが、表面が絶縁物で覆われ、接地或いは高周
波電力が印加される基板保持台であっても、絶縁材料の
基板の場合特に残留吸着による搬送トラブルが起こり
得、このような場合本発明を用いても同様の効果が得ら
れる。In this embodiment, the substrate holding table of the electrostatic attraction type is used. However, the substrate holding table whose surface is covered with an insulating material and to which grounding or high-frequency power is applied may be applied to a substrate made of an insulating material. In particular, a transport trouble due to residual adsorption may occur. In such a case, the same effect can be obtained by using the present invention.
【００４７】本実施形態において、反応性イオンエッチ
ング型のドライエッチング装置としたが、プラズマの発
生方法はこれに限られるものでなく、誘導結合型、ＥＣ
Ｒ型、ヘリコン波型、表面波型等のプラズマ発生方法と
してもよい。In this embodiment, the reactive ion etching type dry etching apparatus is used. However, the plasma generation method is not limited to this, and the plasma generation method is inductive coupling type, EC type.
A plasma generation method such as an R type, a helicon wave type, and a surface wave type may be used.
【００４８】また、実施形態において、ドライエッチン
グ装置を例にとって説明したが、プラズマＣＶＤ装置
や、スパッタリング装置、アッシング装置に本発明を用
いてもよい。In the embodiment, the dry etching apparatus has been described as an example, but the present invention may be applied to a plasma CVD apparatus, a sputtering apparatus, and an ashing apparatus.
【００４９】[0049]
【発明の効果】以上のように本発明によれば、被処理基
板の残留吸着を解消し、被処理基材の搬送トラブルがな
く、装置の信頼性を高め、かつ、発塵やデバイスダメー
ジによる製品不良を無くするという有利な効果が得られ
る。As described above, according to the present invention, the residual adsorption of the substrate to be processed is eliminated, the trouble of transporting the substrate to be processed is eliminated, the reliability of the apparatus is improved, and the generation of dust and device damage are prevented. An advantageous effect of eliminating product defects can be obtained.
【００５０】すなわち、本発明の第１態様において、上
記被処理基板を突き上げたときの突き上げ負荷を検出
し、上記検出された値に基き、上記被処理基板を突き上
げる突き上げ速度を制御するようにすれば、残留吸着さ
れている被処理基板を決められた荷重の範囲内にて突き
上げるように制御することができて、被処理基板に機械
的変形を加えることなく、基板保持台より剥離できるた
め、被処理基板上のデバイスが破壊されることもない。
また、被処理基板が基板保持台より剥離し、無負荷状態
になった際の機械的変形小さいため、被処理基板の裏面
のダストが被処理基板の表面側に回り込むこともない。
よって、静電吸着とプラズマ処理とを行うことにより、
被処理基板と基板保持台の絶縁層表面に発生する残留吸
着を、被処理基板を突き上げる力を検知、制御しつつ、
被処理基板を基板保持台の絶縁層表面から離脱させるこ
とにより、被処理基板にデバイスダメージや発塵を生じ
させることなく、さらには、被処理基板の搬送トラブル
なく、安定してプラズマ処理することができる。That is, in the first aspect of the present invention, a thrust load when the substrate to be processed is thrust is detected, and the thrust speed at which the substrate to be processed thrust is controlled based on the detected value. For example, it is possible to control the substrate to be processed that is remaining adsorbed so as to be pushed up within a predetermined load range, and it is possible to peel the substrate from the substrate holding table without mechanically deforming the substrate to be processed. The device on the substrate to be processed is not destroyed.
In addition, since the substrate to be processed is peeled off from the substrate holding table and has a small mechanical deformation when it is in a no-load state, dust on the back surface of the substrate to be processed does not flow to the front side of the substrate to be processed.
Therefore, by performing the electrostatic adsorption and the plasma processing,
While detecting and controlling the force that pushes up the substrate to be processed, the residual suction that occurs on the insulating layer surface of the substrate to be processed and the substrate holding table,
By separating the substrate to be processed from the insulating layer surface of the substrate holding table, plasma processing can be performed stably without causing device damage or dust generation on the substrate to be processed, and without transport trouble of the substrate to be processed. Can be.
【００５１】また、本発明の第２態様において、上記検
出された値に基き、上記被処理基板を突き上げる際、突
き上げ負荷が所定の荷重以下となるように上記被処理基
板の上記突き上げ速度を制御するようにすれば、残留吸
着されている被処理基板を決められた荷重の範囲内にて
突き上げることで、被処理基板に機械的変形を加えるこ
となく、基板保持台より剥離できるため、被処理基板上
のデバイスが破壊されることもない。また、被処理基板
が基板保持台より剥離し、無負荷状態になった際の機械
的変形小さいため、被処理基板の裏面のダストが被処理
基板の表面側に回り込むこともない。よって、静電吸着
とプラズマ処理とを行うことにより、被処理基板と基板
保持台の絶縁層表面に発生する残留吸着を、被処理基板
を突き上げる力を検知、制御しつつ、被処理基板を基板
保持台の絶縁層表面から離脱させることにより、被処理
基板にデバイスダメージや発塵を生じさせることなく、
さらには、被処理基板の搬送トラブルなく、安定してプ
ラズマ処理することができる。In the second aspect of the present invention, when the substrate to be processed is pushed up based on the detected value, the pushing speed of the substrate to be treated is controlled so that the pushing load is equal to or less than a predetermined load. When the substrate to be processed is lifted up within the predetermined load range, the substrate to be processed can be separated from the substrate holding table without mechanically deforming the substrate to be processed. Devices on the substrate are not destroyed. In addition, since the substrate to be processed is peeled off from the substrate holding table and has a small mechanical deformation when it is in a no-load state, dust on the back surface of the substrate to be processed does not flow to the front side of the substrate to be processed. Therefore, by performing electrostatic attraction and plasma processing, the substrate to be processed is moved to the substrate while detecting and controlling the force for pushing up the substrate to be processed and the residual suction generated on the insulating layer surface of the substrate and the substrate holder. By detaching from the insulating layer surface of the holder, device damage and dust generation do not occur on the substrate to be processed.
Furthermore, plasma processing can be performed stably without trouble in transporting the substrate to be processed.
【００５２】また、本発明の第３態様において、上記検
出された値が９８０Ｐａ以下となるよう、上記被処理基
板を突き上げる上記突き上げ速度を２ｍｍ／秒以下の速
度に制御するようにすれば、上記した第２態様の作用効
果をより一層確実に奏することができる。Further, in the third aspect of the present invention, if the pushing-up speed for pushing up the substrate to be processed is controlled to a speed of 2 mm / sec or less so that the detected value becomes 980 Pa or less, The operation and effect of the second aspect described above can be further reliably achieved.
【００５３】また、本発明の第４態様において、被処理
基板を突き上げたときの突き上げ負荷に基づいて検出す
る検出装置と、上記検出装置により検出された値に基
き、上記被処理基板を突き上げる突き上げ速度を制御す
る制御装置とを備えるようにすれば、残留吸着されてい
る被処理基板を決められた荷重の範囲内にて突き上げる
ように制御することができて、被処理基板に機械的変形
を加えることなく、基板保持台より剥離できるため、被
処理基板上のデバイスが破壊されることもない。また、
被処理基板が基板保持台より剥離し、無負荷状態になっ
た際の機械的変形小さいため、被処理基板の裏面のダス
トが被処理基板の表面側に回り込むこともない。よっ
て、静電吸着とプラズマ処理とを行うことにより、被処
理基板と基板保持台の絶縁層表面に発生する残留吸着
を、被処理基板を突き上げる力を検知、制御しつつ、被
処理基板を基板保持台の絶縁層表面から離脱させること
により、被処理基板にデバイスダメージや発塵を生じさ
せることなく、さらには、被処理基板の搬送トラブルな
く、安定してプラズマ処理することができる。Further, in the fourth aspect of the present invention, a detecting device for detecting based on a thrust load when the substrate to be processed is thrust up, and a thrusting device for thrusting the substrate to be processed based on a value detected by the detecting device. By providing a control device for controlling the speed, it is possible to control the substrate to be processed that is remaining adsorbed so as to be pushed up within a predetermined load range, and to cause mechanical deformation on the substrate to be processed. Since it can be peeled off from the substrate holder without being added, the device on the substrate to be processed is not destroyed. Also,
Since the substrate to be processed is peeled off from the substrate holding table and has a small mechanical deformation when it is in a no-load state, dust on the back surface of the substrate to be processed does not reach the front side of the substrate to be processed. Therefore, by performing electrostatic attraction and plasma processing, the substrate to be processed is moved to the substrate while detecting and controlling the force for pushing up the substrate to be processed and the residual suction generated on the insulating layer surface of the substrate and the substrate holder. By detaching the substrate from the surface of the insulating layer, plasma processing can be performed stably without causing device damage or dust generation on the substrate to be processed and without causing trouble in transporting the substrate to be processed.
【００５４】また、本発明の第５態様において、上記制
御装置は、上記検出された値に基き、上記被処理基板を
突き上げる際、突き上げ負荷が所定の荷重以下となるよ
うに上記被処理基板の上記突き上げ速度を制御するよう
にすれば、残留吸着されている被処理基板を決められた
荷重の範囲内にて突き上げることで、被処理基板に機械
的変形を加えることなく、基板保持台より剥離できるた
め、被処理基板上のデバイスが破壊されることもない。
また、被処理基板が基板保持台より剥離し、無負荷状態
になった際の機械的変形小さいため、被処理基板の裏面
のダストが被処理基板の表面側に回り込むこともない。
よって、静電吸着とプラズマ処理とを行うことにより、
被処理基板と基板保持台の絶縁層表面に発生する残留吸
着を、被処理基板を突き上げる力を検知、制御しつつ、
被処理基板を基板保持台の絶縁層表面から離脱させるこ
とにより、被処理基板にデバイスダメージや発塵を生じ
させることなく、さらには、被処理基板の搬送トラブル
なく、安定してプラズマ処理することができる。Further, in the fifth aspect of the present invention, the control device, based on the detected value, pushes up the substrate to be processed so that a thrust load is equal to or less than a predetermined load. By controlling the above-described lifting speed, the substrate to be processed that is remaining adsorbed can be lifted up within a predetermined load range, so that the substrate to be processed can be separated from the substrate holding table without mechanical deformation. Therefore, devices on the substrate to be processed are not destroyed.
In addition, since the substrate to be processed is peeled off from the substrate holding table and has a small mechanical deformation when it is in a no-load state, dust on the back surface of the substrate to be processed does not flow to the front side of the substrate to be processed.
Therefore, by performing the electrostatic adsorption and the plasma processing,
While detecting and controlling the force that pushes up the substrate to be processed, the residual suction that occurs on the insulating layer surface of the substrate to be processed and the substrate holding table,
By separating the substrate to be processed from the insulating layer surface of the substrate holding table, plasma processing can be performed stably without causing device damage or dust generation on the substrate to be processed, and without transport trouble of the substrate to be processed. Can be.
【００５５】また、本発明の第６態様において、上記制
御装置は、上記検出された値が９８０Ｐａ以下となるよ
う、上記被処理基板を突き上げる上記突き上げ速度を２
ｍｍ／秒以下の速度に制御するようにすれば、上記した
第５態様の作用効果をより一層確実に奏することができ
る。In the sixth aspect of the present invention, the control device sets the thrust speed at which the substrate to be processed is thrust up to 2 so that the detected value becomes 980 Pa or less.
If the speed is controlled to be not more than mm / sec, the operation and effect of the fifth aspect described above can be achieved more reliably.
【００５６】また、本発明の第７態様において、上記基
板保持台の基板設置面の一部に気孔状の凹穴を備えるよ
うにすれば、空間放電する面積を増加させることで、残
留電荷をさらに減少させることができる。Further, in the seventh aspect of the present invention, if a pore-shaped concave hole is provided in a part of the substrate mounting surface of the substrate holding table, the area for spatial discharge is increased, and the residual charge is reduced. It can be further reduced.
【００５７】また、本発明の第８態様において、第４〜
６のいずれか１つの態様について、上記気孔状の凹穴は
上記基板保持台の上記基板設置面の外周部に備えられる
ようにすれば、一般に、基板保持台の内周部よりも外周
部に残留電荷が多く残るため、基板保持台の外周部の基
板接触部に気孔状の多数の凹穴を形成して空間放電する
面積を増加させて残留電荷を減らすようにすれば、被処
理基板の外周部と内周部の残留吸着力の差を減少させる
ことができる。Also, in the eighth aspect of the present invention, the fourth to fourth embodiments
In any one of the above aspects, if the pore-shaped concave hole is provided on an outer peripheral portion of the substrate mounting surface of the substrate holding base, generally, the pore-shaped concave hole is provided on an outer peripheral portion rather than an inner peripheral portion of the substrate holding base. Since a large amount of residual charge remains, a large number of pore-shaped concave holes are formed in the substrate contact portion on the outer peripheral portion of the substrate holding table to increase the area for spatial discharge and reduce the residual charge, so that the substrate to be processed can be reduced. It is possible to reduce the difference in residual suction force between the outer peripheral portion and the inner peripheral portion.
【００５８】また、本発明の第９態様において、反応ガ
スが供給された真空雰囲気内でプラズマを発生させて上
記被処理基板に対し表面処理を行ったのち、第１〜３の
いずれか１つの態様の真空処理装置の基板取り外し制御
方法を使用して、上記基板保持台上に静電吸着されてい
る上記被処理基板を突き上げて上記被処理基板を上記基
板処理台から取り外すことにより、上記基板取り外し制
御方法に基く作用効果を奏することができる。Further, in the ninth aspect of the present invention, after performing a surface treatment on the substrate to be processed by generating plasma in a vacuum atmosphere supplied with a reaction gas, any one of the first to third embodiments is performed. By using the substrate removal control method of the vacuum processing apparatus according to the aspect, the substrate to be processed, which is electrostatically adsorbed on the substrate holding table, is lifted up and the substrate to be processed is removed from the substrate processing table. The operation and effect based on the detachment control method can be achieved.
【図１】 本発明の一実施形態の形態におけるプラズマ
処理装置の反応室の断面図である。FIG. 1 is a sectional view of a reaction chamber of a plasma processing apparatus according to an embodiment of the present invention.
【図２】 上記実施形態のプラズマ処理装置の基板保持
台の断面図である。FIG. 2 is a cross-sectional view of a substrate holder of the plasma processing apparatus of the embodiment.
【図３】 従来のプラズマ処理装置の反応室の断面図で
ある。FIG. 3 is a sectional view of a reaction chamber of a conventional plasma processing apparatus.
【図４】 従来のプラズマ処理装置の基板保持台の断面
図である。FIG. 4 is a sectional view of a substrate holder of a conventional plasma processing apparatus.
１…真空室、２…真空排気装置、３…基板保持台、４…
被処理基板、７…高周波フィルター、８，９…直流電
源、１１…伝熱ガス供給装置、１１ａ…流量コントロー
ラ、１１ｂ…バルブ、１２…伝熱ガス圧力監視制御装
置、１２ａ…圧力計、１２ｂ…絞り弁、１３…反応ガス
供給装置、１４…高周波電源、１７…コンデンサ、１８
…上部電極、１９…突き上げ装置、１９ａ…突き上げピ
ン、１９ｂ…駆動部材、２０…検出装置、２１…突き上
げ装置制御装置、２１ａ…検出情報記録部、２１ｂ…直
動モーター駆動制御部、２２…ベローズ、２３…加変速
直動モーター、２７Ａ，２７Ｂ…内部電極、２８…基板
冷却制御部、２９…アルミナ誘電体部、２９Ａ…基板接
触部、２９Ｂ…凹溝部、２９Ｃ…凹穴、３０…ベース
部、３１…突き出し部。DESCRIPTION OF SYMBOLS 1 ... Vacuum chamber, 2 ... Vacuum exhaust device, 3 ... Substrate holding stand, 4 ...
Substrate to be processed, 7 ... High frequency filter, 8, 9 ... DC power supply, 11 ... Heat transfer gas supply device, 11a ... Flow controller, 11b ... Valve, 12 ... Heat transfer gas pressure monitoring and control device, 12a ... Pressure gauge, 12b ... Throttle valve, 13: reactive gas supply device, 14: high frequency power supply, 17: condenser, 18
... upper electrode, 19 ... push-up device, 19a ... push-up pin, 19b ... drive member, 20 ... detection device, 21 ... push-up device control device, 21a ... detection information recording unit, 21b ... linear motor drive control unit, 22 ... bellows , 23 ... speed-change linear motor, 27A, 27B ... internal electrode, 28 ... substrate cooling control part, 29 ... alumina dielectric part, 29A ... substrate contact part, 29B ... concave groove part, 29C ... concave hole, 30 ... base part , 31 ... Projection part.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 山本 重之 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 Ｆターム(参考） 3C016 AA01 CE05 GA10 5F004 AA13 BA04 BB18 BB22 BC01 BC06 BC08 BD01 BD04 DA01 DA26 5F031 CA02 HA02 HA08 HA16 HA33 HA35 HA38 HA39 JA45 LA07 MA32 NA05 5F045 AA08 BB08 BB14 BB16 DP03 EB02 EH14 EM05 EM06 EM07 EM09 EN04 GB11 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Shigeyuki Yamamoto 1006 Kazuma Kadoma, Kadoma-shi, Osaka Matsushita Electric Industrial Co., Ltd. F-term (reference) 3C016 AA01 CE05 GA10 5F004 AA13 BA04 BB18 BB22 BC01 BC06 BC08 BD01 BD04 DA01 DA26 5F031 CA02 HA02 HA08 HA16 HA33 HA35 HA38 HA39 JA45 LA07 MA32 NA05 5F045 AA08 BB08 BB14 BB16 DP03 EB02 EH14 EM05 EM06 EM07 EM09 EN04 GB11
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000064790AJP2001257252A (en) | 2000-03-09 | 2000-03-09 | Substrate removal control method for vacuum processing apparatus and vacuum processing apparatus |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000064790AJP2001257252A (en) | 2000-03-09 | 2000-03-09 | Substrate removal control method for vacuum processing apparatus and vacuum processing apparatus |
| Publication Number | Publication Date |
|---|---|
| JP2001257252Atrue JP2001257252A (en) | 2001-09-21 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000064790APendingJP2001257252A (en) | 2000-03-09 | 2000-03-09 | Substrate removal control method for vacuum processing apparatus and vacuum processing apparatus |
| Country | Link |
|---|---|
| JP (1) | JP2001257252A (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006057299A1 (en)* | 2004-11-26 | 2006-06-01 | Nikon Corporation | Stage apparatus and exposure apparatus |
| JP2007318010A (en)* | 2006-05-29 | 2007-12-06 | Ulvac Japan Ltd | Vacuum processing equipment |
| JP2007335657A (en)* | 2006-06-15 | 2007-12-27 | Hitachi High-Technologies Corp | Plasma treatment device |
| US7696653B2 (en) | 2006-03-30 | 2010-04-13 | Nikon Corporation | Movable-body apparatus, exposure apparatus and methods comprising same, and device-manufacturing methods |
| KR101393464B1 (en)* | 2011-12-30 | 2014-05-13 | 엘아이지에이디피 주식회사 | Substrates detaching apparatus |
| CN115592257A (en)* | 2022-12-13 | 2023-01-13 | 西北电子装备技术研究所（中国电子科技集团公司第二研究所）（Cn） | Mechanical stripping device for stripping wafer from laser modified crystal |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02120831A (en)* | 1988-09-16 | 1990-05-08 | Rhone Poulenc Chim | Nonlinear optically active polyurethane, materials containing the same, optical devices containing the same, and methods for producing these compounds and materials |
| JPH05129421A (en)* | 1991-11-07 | 1993-05-25 | Fujitsu Ltd | Electrostatic check |
| JPH07176586A (en)* | 1993-12-17 | 1995-07-14 | Kobe Steel Ltd | Plasma treatment apparatus |
| JPH11233601A (en)* | 1998-02-10 | 1999-08-27 | Hitachi Ltd | Electrostatic suction device and sample processing device using the same |
| JPH11260897A (en)* | 1998-03-12 | 1999-09-24 | Matsushita Electric Ind Co Ltd | Substrate handling method and apparatus, suction inspection method and apparatus used for it |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02120831A (en)* | 1988-09-16 | 1990-05-08 | Rhone Poulenc Chim | Nonlinear optically active polyurethane, materials containing the same, optical devices containing the same, and methods for producing these compounds and materials |
| JPH05129421A (en)* | 1991-11-07 | 1993-05-25 | Fujitsu Ltd | Electrostatic check |
| JPH07176586A (en)* | 1993-12-17 | 1995-07-14 | Kobe Steel Ltd | Plasma treatment apparatus |
| JPH11233601A (en)* | 1998-02-10 | 1999-08-27 | Hitachi Ltd | Electrostatic suction device and sample processing device using the same |
| JPH11260897A (en)* | 1998-03-12 | 1999-09-24 | Matsushita Electric Ind Co Ltd | Substrate handling method and apparatus, suction inspection method and apparatus used for it |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006057299A1 (en)* | 2004-11-26 | 2006-06-01 | Nikon Corporation | Stage apparatus and exposure apparatus |
| US7696653B2 (en) | 2006-03-30 | 2010-04-13 | Nikon Corporation | Movable-body apparatus, exposure apparatus and methods comprising same, and device-manufacturing methods |
| JP2007318010A (en)* | 2006-05-29 | 2007-12-06 | Ulvac Japan Ltd | Vacuum processing equipment |
| JP2007335657A (en)* | 2006-06-15 | 2007-12-27 | Hitachi High-Technologies Corp | Plasma treatment device |
| KR101393464B1 (en)* | 2011-12-30 | 2014-05-13 | 엘아이지에이디피 주식회사 | Substrates detaching apparatus |
| CN115592257A (en)* | 2022-12-13 | 2023-01-13 | 西北电子装备技术研究所（中国电子科技集团公司第二研究所）（Cn） | Mechanical stripping device for stripping wafer from laser modified crystal |
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