Movatterモバイル変換

[0]ホーム
URL:

JP2001207265A - Film forming equipment - Google Patents

Film forming equipment

Info

Publication number
JP2001207265A
JP2001207265AJP2000018887AJP2000018887AJP2001207265AJP 2001207265 AJP2001207265 AJP 2001207265AJP 2000018887 AJP2000018887 AJP 2000018887AJP 2000018887 AJP2000018887 AJP 2000018887AJP 2001207265 AJP2001207265 AJP 2001207265A
Authority
JP
Japan
Prior art keywords
gas
pressure
film
plasma
film formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000018887A
Other languages
Japanese (ja)
Inventor
Takahiro Mizoguchi
高宏 溝口
Koji Yokota
浩二 横田
Yoshito Hayakawa
義人 早川
Makoto Maeda
誠 前田
Hironori Hara
裕紀 原
Masami Kubota
昌実 久保田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kubota Corp
Original Assignee
Kubota Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kubota CorpfiledCriticalKubota Corp
Priority to JP2000018887ApriorityCriticalpatent/JP2001207265A/en
Publication of JP2001207265ApublicationCriticalpatent/JP2001207265A/en
Withdrawnlegal-statusCriticalCurrent

Links

Landscapes

Abstract

Translated fromJapanese

(57)【要約】【構成】 はじめに放電限界下限ガス圧よりも十分に高
い第1圧力の非成膜ガス（Ａｒ）をガス導入手段により
成膜チャンバにスパイク導入し、プラズマ生成手段によ
りプラズマを発生させる。その後、第１圧力より低く放
電限界下限ガス圧よりもやや高い第２圧力すなわちプラ
ズマ放電を持続可能な程度の圧力で非成膜ガスを供給
し、プラズマ放電を安定させて持続させる。そして、成
膜時には、非成膜ガスに替えて成膜ガス（Ｃ2Ｈ2）を成
膜チャンバに導入する。成膜後には、再び第２圧力の非
成膜ガスに切り替えて、次の成膜までプラズマ放電を持
続させる。【効果】 非成膜ガスをスパイク導入して、プラズマ放
電を効率よく発生させるようにしたので、より早くプラ
ズマ放電の安定状態を得ることができる。(57) [Summary] [Configuration] First, a non-deposition gas (Ar) having a first pressure sufficiently higher than a discharge limit lower limit gas pressure is spike-introduced into a deposition chamber by a gas introduction unit, and plasma is generated by a plasma generation unit. generate. Thereafter, the non-deposition gas is supplied at a second pressure lower than the first pressure and slightly higher than the lower limit gas pressure at the discharge limit, that is, a pressure at which the plasma discharge can be sustained, and the plasma discharge is stabilized and maintained. Then, at the time of film formation, a film formation gas (C2 H2 ) is introduced into the film formation chamber instead of the non-film formation gas. After the film formation, the gas is switched again to the non-film formation gas at the second pressure, and the plasma discharge is continued until the next film formation. [Effect] Since a non-deposition gas is spike-introduced to efficiently generate plasma discharge, a stable state of plasma discharge can be obtained more quickly.

Description

Translated fromJapanese
【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【産業上の利用分野】この発明は成膜装置に関し、特に
たとえばハードディスク，半導体装置，ＬＣＤ，機械部
品または刃物等の被処理体に対してＣＶＤ法により成膜
する、成膜装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming apparatus, and more particularly to a film forming apparatus for forming a film on an object to be processed such as a hard disk, a semiconductor device, an LCD, a mechanical part or a blade by a CVD method.

【０００２】[0002]

【従来の技術】この種の従来の成膜装置では、成膜チャ
ンバ内に成膜ガスを所定圧力で導入し、これをプラズマ
生成装置でプラズマ化して被処理体の表面に堆積させる
ようにしていた。そして、放電の初期段階には、プラズ
マを効率よく発生させるために、成膜チャンバ内のガス
圧を高めに設定していた。2. Description of the Related Art In a conventional film forming apparatus of this type, a film forming gas is introduced into a film forming chamber at a predetermined pressure, and the gas is converted into plasma by a plasma generating apparatus and deposited on the surface of an object to be processed. Was. In the initial stage of the discharge, the gas pressure in the film forming chamber was set to be high in order to generate plasma efficiently.

【０００３】この従来技術では、プラズマ放電開始時か
ら成膜ガスを導入していたので、プラズマ放電が不安定
な成膜初期段階に、性能および品質で劣る膜が多量に形
成されるという問題があった。つまり、成膜初期段階に
は、良好な性能および品質が得られるエネルギレベルよ
りも小さいエネルギのプラズマによって膜の堆積が生じ
るため膜の密着性が悪くなり、膜が剥離し易くなってい
た。また、成膜チャンバの内壁等にもこの質の悪い膜が
堆積されるため、パーティクルの発生原因になってい
た。In this prior art, since a film forming gas is introduced from the start of plasma discharge, there is a problem that a large number of films having poor performance and quality are formed at the initial stage of film formation in which plasma discharge is unstable. there were. That is, in the initial stage of the film formation, the film is deposited by the plasma having the energy lower than the energy level at which good performance and quality can be obtained, so that the adhesion of the film is deteriorated and the film is easily peeled. In addition, since this poor quality film is deposited on the inner wall of the film forming chamber or the like, it has been a cause of generation of particles.

【０００４】そこで、成膜初期段階から安定した膜を形
成するための技術として、たとえば特開平８−４５８５
７号公報のものが提案されている。この技術は、プラズ
マ放電の開始時に、不活性ガス，窒素ガス，酸素ガス，
水素ガスまたはハロゲンガス等の非成膜ガスのみを一定
圧力で成膜チャンバ内に導入し、この非成膜ガスでプラ
ズマ放電を安定させて持続させ、その後、成膜ガスを成
膜チャンバへ導入するようにしたものである。Therefore, as a technique for forming a stable film from the initial stage of film formation, for example, Japanese Patent Application Laid-Open No. H8-4585.
No. 7 has been proposed. This technique uses an inert gas, nitrogen gas, oxygen gas,
Only a non-deposition gas such as a hydrogen gas or a halogen gas is introduced into the deposition chamber at a constant pressure, and the plasma discharge is stabilized and maintained by the non-deposition gas, and then the deposition gas is introduced into the deposition chamber. It is something to do.

【０００５】[0005]

【発明が解決しようとする課題】上述の従来技術（特開
平８−４５８５７号）では、成膜初期段階に質の悪い膜
が堆積されるのを防止できるものの、非成膜ガスのガス
圧が一定値に設定されていたのでプラズマ放電が安定す
るまでに時間がかかり、生産性が低いという問題があっ
た。In the above-mentioned prior art (Japanese Patent Laid-Open No. 45857/1996), deposition of a poor quality film at the initial stage of film formation can be prevented, but the gas pressure of the non-film formation gas is reduced. Since it is set to a constant value, it takes time for the plasma discharge to stabilize, and there is a problem that productivity is low.

【０００６】それゆえに、この発明の主たる目的は、プ
ラズマ放電の安定状態をより早く得ることができるとと
もに、膜質の劣化を防止できる、成膜装置を提供するこ
とである。[0006] Therefore, a main object of the present invention is to provide a film forming apparatus capable of obtaining a stable state of plasma discharge more quickly and preventing deterioration of film quality.

【０００７】[0007]

【課題を解決するための手段】この発明は、被処理体を
収容する成膜チャンバ、非成膜ガスおよび成膜ガスを切
り替えながら成膜チャンバへ連続的に導入するガス導入
手段、非成膜ガスおよび成膜ガスをプラズマ化するプラ
ズマ生成手段、および非成膜ガスおよび成膜ガスの圧力
を制御する圧力制御手段を備え、非成膜ガスを第１圧力
でスパイク導入してプラズマを発生させ、非成膜ガスを
第１圧力より低い第２圧力で導入してプラズマを持続さ
せ、非成膜ガスに替えて成膜ガスを導入して成膜する、
成膜装置である。SUMMARY OF THE INVENTION The present invention provides a film forming chamber for accommodating an object to be processed, a gas introducing means for continuously introducing a non-film forming gas and a film forming gas into the film forming chamber while switching the same, and a non-film forming method. A plasma generating means for converting the gas and the film forming gas into a plasma, and a pressure control means for controlling the pressure of the non-film forming gas and the film forming gas, wherein the non-film forming gas is spiked at a first pressure to generate plasma Introducing a non-deposition gas at a second pressure lower than the first pressure to sustain plasma, and introducing a deposition gas in place of the non-deposition gas to form a film;
It is a film forming apparatus.

【０００８】[0008]

【作用】たとえば、はじめに放電限界下限ガス圧よりも
十分に高い第１圧力の非成膜ガスをガス導入手段により
成膜チャンバにスパイク導入し、プラズマ生成手段によ
りプラズマを発生させる。その後、第１圧力より低く放
電限界下限ガス圧よりもやや高い第２圧力すなわちプラ
ズマ放電を持続可能な程度の圧力で非成膜ガスを供給
し、プラズマ放電を安定させて持続させる。そして、成
膜時には、非成膜ガスに替えて成膜ガスを成膜チャンバ
に導入する。プラズマ放電は非成膜ガスによって安定し
て持続されるため、非成膜ガスを成膜ガスに切り替えて
もプラズマ放電の安定状態は維持される。成膜後には、
再び第２圧力の非成膜ガスに切り替えて、次の成膜まで
プラズマ放電を持続させる。For example, first, a non-deposition gas having a first pressure sufficiently higher than the lower limit gas pressure of the discharge limit is spike-introduced into the deposition chamber by the gas introduction means, and plasma is generated by the plasma generation means. Thereafter, the non-deposition gas is supplied at a second pressure lower than the first pressure and slightly higher than the lower limit gas pressure at the discharge limit, that is, a pressure at which the plasma discharge can be sustained, and the plasma discharge is stabilized and maintained. Then, at the time of film formation, a film formation gas is introduced into the film formation chamber instead of the non-film formation gas. Since the plasma discharge is stably maintained by the non-deposition gas, the stable state of the plasma discharge is maintained even if the non-deposition gas is switched to the deposition gas. After film formation,
Switching to the non-deposition gas at the second pressure is again performed, and the plasma discharge is continued until the next deposition.

【０００９】[0009]

【発明の効果】この発明によれば、成膜初期段階にたと
えば放電限界下限ガス圧よりも十分に高い第１圧力の非
成膜ガスをスパイク導入して、プラズマ放電を効率よく
発生させるようにしたので、より早くプラズマ放電の安
定状態を得ることができる。According to the present invention, a non-deposition gas having a first pressure sufficiently higher than, for example, a discharge lower limit gas pressure is spike-introduced at the initial stage of film formation so that plasma discharge can be efficiently generated. Therefore, a stable state of plasma discharge can be obtained more quickly.

【００１０】また、第１圧力より低い第２圧力でプラズ
マ放電を安定させて持続させるようにしたので、高エネ
ルギのプラズマによって装置内部が叩かれるのを防止で
き、装置の耐久性を向上できる。Further, since the plasma discharge is stably maintained at the second pressure lower than the first pressure, it is possible to prevent the inside of the apparatus from being hit by the high-energy plasma, thereby improving the durability of the apparatus.

【００１１】この発明の上述の目的，その他の目的，特
徴および利点は、図面を参照して行う以下の実施例の詳
細な説明から一層明らかとなろう。The above and other objects, features and advantages of the present invention will become more apparent from the following detailed description of embodiments with reference to the drawings.

【００１２】[0012]

【実施例】図１を参照して、この実施例の成膜装置１０
は、たとえばハードディスクの製造工程において、搬送
機１２によって順次搬送される被処理体としての基板１
４にダイアモンドライクカーボン（ＤＬＣ）膜等のよう
な保護膜を成膜するものである。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Referring to FIG.
For example, in a hard disk manufacturing process, a substrate 1 as an object to be processed which is sequentially transported by the transporter 12 is
In No. 4, a protective film such as a diamond-like carbon (DLC) film is formed.

【００１３】ここで、搬送機１２は、開口１６ａを有す
るケーシング１６を含み、ケーシング１６の内部には、
基板１４を搬送する搬送部１８が設けられる。搬送部１
８は、上下方向へ変位可能な保持部２０を含み、保持部
２０の基部には鍔２２が形成され、鍔２２の上面にはＯ
リング等のような環状のシール材２４が装着される。Here, the transporter 12 includes a casing 16 having an opening 16a.
A transport unit 18 that transports the substrate 14 is provided. Transport unit 1
8 includes a holding portion 20 that can be displaced in the vertical direction, a flange 22 is formed at the base of the holding portion 20, and an O
An annular sealing material 24 such as a ring is mounted.

【００１４】成膜装置１０は、基板１４の表面に成膜す
るプラズマＣＶＤ装置（以下、単に「ＣＶＤ装置」とい
う。）２６を含む。ＣＶＤ装置２６は、基板１４を収容
する成膜チャンバ２８を含み、成膜チャンバ２８の互い
に対向する２つの側面には開口２８ａが形成され、上面
には排気口２８ｂが形成され、下面には開口２８ｃが形
成される。そして、各開口２８ａにはプラズマ生成装置
３０が取り付けられ、排気口２８ｂには真空ポンプ等の
ような図示しない圧力制御手段（排気手段）が接続され
る。The film forming apparatus 10 includes a plasma CVD apparatus (hereinafter, simply referred to as “CVD apparatus”) 26 for forming a film on the surface of the substrate 14. The CVD apparatus 26 includes a film forming chamber 28 for accommodating the substrate 14, an opening 28a is formed on two opposite sides of the film forming chamber 28, an exhaust port 28b is formed on the upper surface, and an opening 28b is formed on the lower surface. 28c are formed. A plasma generator 30 is attached to each of the openings 28a, and a pressure control unit (exhaust unit) (not shown) such as a vacuum pump is connected to the exhaust port 28b.

【００１５】プラズマ生成装置３０は、たとえば米国特
許第５，８５８，４７７号公報において開示されたよう
な周知のものであり、図２からよくわかるように、ガス
導入部３２およびプラズマ生成部３４を含む。ガス導入
部３２は導入管３６を含み、導入管３６の先端にはプラ
ズマ生成部３４を構成するＲＦ電極３８が形成される。
また、ＲＦ電極３８の先方にはプラズマ生成領域を囲む
ようにして磁石４０が配置され、さらにその先方にはグ
リッド４２が配置される。The plasma generating apparatus 30 is a well-known type as disclosed in, for example, US Pat. No. 5,858,477. As can be clearly understood from FIG. 2, the gas introducing section 32 and the plasma generating section 34 are connected to each other. Including. The gas introduction unit 32 includes an introduction tube 36, and an RF electrode 38 constituting the plasma generation unit 34 is formed at a tip of the introduction tube 36.
Further, a magnet 40 is arranged in front of the RF electrode 38 so as to surround the plasma generation region, and a grid 42 is further arranged in front of the magnet 40.

【００１６】また、ガス導入部３２の導入管３６には、
図１に示すように、図示しないガス供給源からの成膜ガ
スを導く１つの管路４４ａと非成膜ガスを導く２つの管
路４４ｂおよび４４ｃとが接続され、管路４４ａおよび
４４ｃには、各ガスの流量を制御するためのマスフロー
コントローラ（ＭＦＣ）４６が設けられ、管路４４ｂに
は、非成膜ガスをスパイク導入すなわち短時間に高圧で
導入するためのピエゾバルブ４８が設けられる。さら
に、各管路４４ａ，４４ｂおよび４４ｃにおけるマスフ
ローコントローラ（ＭＦＣ）４６またはピエゾバルブ４
８の下流側には、導入ガスを切り替えるための切替バル
ブ５０が設けられる。なお、ピエゾバルブ４８は、トグ
ル式の手動バルブ等のような瞬間的に開閉できる他のバ
ルブに置き換えられてもよい。The introduction pipe 36 of the gas introduction section 32 has
As shown in FIG. 1, one conduit 44a for guiding a film forming gas from a gas supply source (not shown) is connected to two conduits 44b and 44c for leading a non-film forming gas, and the conduits 44a and 44c are connected to the conduits 44a and 44c. A mass flow controller (MFC) 46 for controlling the flow rate of each gas is provided, and a piezo valve 48 for introducing a non-film-forming gas by spikes, that is, a high pressure in a short time, is provided in the pipeline 44b. Further, a mass flow controller (MFC) 46 or a piezo valve 4 in each of the pipes 44a, 44b and 44c is provided.
On the downstream side of 8, a switching valve 50 for switching the introduced gas is provided. Note that the piezo valve 48 may be replaced with another valve that can be opened and closed instantaneously, such as a toggle-type manual valve.

【００１７】そして、ガス導入部３２には、成膜ガスお
よび非成膜ガスのいずれかが、切替バルブ５０によって
選択的に供給され、ＲＦ電極３８にはＲＦ電源５２から
電力が印加される。したがって、ガス導入部３２からプ
ラズマ生成部３４にガス（成膜ガスまたは非成膜ガス）
が導入されると、そのガスがプラズマ化され、磁石４０
によって作られる双曲線形磁場５４およびグリッド４２
を通して成膜チャンバ２８内へ導入される。Then, one of a film forming gas and a non-film forming gas is selectively supplied to the gas introducing section 32 by a switching valve 50, and power is applied to the RF electrode 38 from an RF power supply 52. Therefore, the gas (film-forming gas or non-film-forming gas) is supplied from the gas introduction unit 32 to the plasma generation unit 34.
Is introduced, the gas is turned into plasma and the magnet 40
Magnetic field 54 and grid 42 produced by
Through the film formation chamber 28.

【００１８】なお、基板１４にＤＬＣ膜を成膜するため
には、アセチレン，メタン，エタン，エチレン，ベンゼ
ンまたはトルエン等のような炭化水素系のガスが成膜ガ
スとして用いられ、プラズマ放電の安定持続のために
は、アルゴン，ヘリウムまたはネオン等の不活性ガス等
が非成膜ガスとして用いられる。In order to form a DLC film on the substrate 14, a hydrocarbon-based gas such as acetylene, methane, ethane, ethylene, benzene or toluene is used as a film-forming gas to stabilize plasma discharge. For sustaining, an inert gas such as argon, helium, or neon is used as a non-film-forming gas.

【００１９】成膜装置１０は、成膜チャンバ２８の開口
２８ｃが搬送機１２の開口１６ａに位置的に対応するよ
うにして、搬送機１２に固定される。これにより、搬送
機１２と成膜チャンバ２８とが連通され、ＣＶＤ装置２
６内へ基板１４を搬送するための搬送路５６が得られ
る。The film forming apparatus 10 is fixed to the carrier 12 such that the opening 28 c of the film forming chamber 28 corresponds to the opening 16 a of the carrier 12. As a result, the transfer device 12 and the film forming chamber 28 communicate with each other, and the CVD device 2
A transfer path 56 for transferring the substrate 14 into the inside 6 is obtained.

【００２０】以下には、図３に従って、成膜装置１０を
用いて基板１４にＤＬＣ膜を成膜する方法を説明する。
なお、この実施例では、成膜ガスとしてアセチレン（Ｃ
2Ｈ2）を、非成膜ガスとしてアルゴン（Ａｒ）を用いる
ものとする。A method for forming a DLC film on the substrate 14 using the film forming apparatus 10 will be described below with reference to FIG.
In this embodiment, acetylene (C
2 H2 ) using argon (Ar) as a non-film-forming gas.

【００２１】はじめに管路４４ａの切替バルブ５０を閉
鎖するとともに管路４４ｂおよび４４ｃの各切替バルブ
５０を開放し、管路４４ｃから一定流量のアルゴンガス
を導入するとともに、ピエゾバルブ４８によって管路４
４ｂから所定量のアルゴンガスを瞬間的に導入する。つ
まり、アルゴンガスをプラズマ放電下限ガス圧（約０．
１〜０．４ｍＴｏｒｒ）よりも十分に高い第１ガス圧
（約１．５〜５ｍＴｏｒｒ）でスパイク導入する。そし
て、このスパイク導入のタイミングに合わせてＲＦ電極
３８に電力（約３００Ｗ）を印加し、プラズマを発生さ
せる。First, the switching valve 50 of the pipe 44a is closed, and the switching valves 50 of the pipes 44b and 44c are opened. A constant flow rate of argon gas is introduced from the pipe 44c.
A predetermined amount of argon gas is instantaneously introduced from 4b. That is, the argon gas is supplied to the plasma discharge lower limit gas pressure (about 0.
The spike is introduced at a first gas pressure (approximately 1.5-5 mTorr) well above 1-0.4 mTorr. Then, power (approximately 300 W) is applied to the RF electrode 38 in synchronization with the timing of the spike introduction to generate plasma.

【００２２】プラズマが発生した後は、ピエゾバルブ４
８およびその下流の切替バルブ５０を閉じることによっ
て、第１圧力より低くかつ放電限界下限ガス圧よりもや
や高い第２圧力（約０．５ｍＴｏｒｒ）のアルゴンガス
を管路４４ｃから所定時間導入し、プラズマ放電を安定
させる。つまり、比較的低いガス圧でプラズマ放電を安
定させて持続させる。After the plasma is generated, the piezo valve 4
8 and the downstream switching valve 50, an argon gas having a second pressure (about 0.5 mTorr) lower than the first pressure and slightly higher than the discharge lower limit gas pressure is introduced from the pipe 44c for a predetermined time, Stabilizes plasma discharge. That is, the plasma discharge is stabilized and maintained at a relatively low gas pressure.

【００２３】プラズマ放電が安定すると、アルゴンガス
（非成膜ガス）に替えて、第１圧力よりも低くかつ第２
圧力より高い第３圧力（約１．５ｍＴｏｒｒ）のアセチ
レンガス（成膜ガス）を成膜チャンバ２８に導入し、Ｒ
Ｆ電極３８に印加する電力を大きくする（約３００
Ｗ）。そして、搬送機１２の保持部２０を上昇させて、
保持部２０に固定された基板１４を成膜チャンバ２８内
に搬入し、基板１４に対して成膜する。なお、保持部２
０を上昇させると、鍔２２に装着されたシール材２４が
搬送機１２のケーシング１６に圧接されて搬送路５４が
封鎖されるので、成膜時におけるアセチレンガスの漏洩
は生じない。When the plasma discharge is stabilized, the pressure is lower than the first pressure and the second pressure is changed to the second gas instead of the argon gas (non-deposition gas).
An acetylene gas (deposition gas) at a third pressure (about 1.5 mTorr) higher than the pressure is introduced into the deposition chamber 28, and R
The power applied to the F electrode 38 is increased (about 300
W). Then, the holding unit 20 of the transporter 12 is raised,
The substrate 14 fixed to the holding unit 20 is carried into the film forming chamber 28 and a film is formed on the substrate 14. The holding unit 2
When 0 is raised, the sealing material 24 attached to the flange 22 is pressed against the casing 16 of the transfer device 12 and the transfer path 54 is closed, so that acetylene gas does not leak during film formation.

【００２４】成膜が終わると、基板１４を成膜チャンバ
２８から搬出し、導入ガスを第３圧力のアセチレンガス
から第２圧力のアルゴンガスに切り替えるとともに、Ｒ
Ｆ電極３８に印加する電力を小さくする（約２００
Ｗ）。それにより、プラズマ放電の安定状態を持続させ
て、次の成膜が開始されるまで待機する。When the film formation is completed, the substrate 14 is unloaded from the film formation chamber 28, and the introduced gas is switched from acetylene gas at the third pressure to argon gas at the second pressure.
The power applied to the F electrode 38 is reduced (about 200
W). Thus, a stable state of the plasma discharge is maintained, and the process waits until the next film formation is started.

【００２５】そして、次に処理する基板１４が搬送機１
２により搬送されてくると、導入ガスを第２圧力のアル
ゴンガスから第３圧力のアセチレンガスに切り替えると
ともに、ＲＦ電極３８に印加する電力を大きくし（約３
００Ｗ）、成膜チャンバ２８内に基板１４を搬入して成
膜する。このようにして、成膜およびプラズマ放電の安
定持続を交互に繰り返す。Then, the substrate 14 to be processed next is
2, the gas to be introduced is switched from argon gas at the second pressure to acetylene gas at the third pressure, and the power applied to the RF electrode 38 is increased (about 3
00W), the substrate 14 is loaded into the film forming chamber 28 to form a film. In this way, the film formation and the stable maintenance of the plasma discharge are alternately repeated.

【００２６】この実施例によれば、はじめに非成膜ガス
のスパイク導入によってプラズマを効率よく発生させる
ようにしたので、より早くプラズマの安定放電を得るこ
とができ、生産性を向上できる。According to this embodiment, first, plasma is efficiently generated by introducing a spike of a non-deposition gas, so that a stable plasma discharge can be obtained more quickly and productivity can be improved.

【００２７】また、成膜の必要がないときでも、成膜チ
ャンバ２８に非成膜ガスを導入してプラズマ放電を安定
状態で持続させるようにしたので、繰り返し成膜を行う
場合には、２回め以降の成膜工程において成膜ガスのス
パイク導入を省略できる。Even when film formation is not necessary, a non-film formation gas is introduced into the film formation chamber 28 to maintain plasma discharge in a stable state. The spike introduction of the deposition gas can be omitted in the subsequent deposition steps.

【００２８】さらに、プラズマ放電を安定持続させる際
には、非成膜ガスの圧力を第１圧力よりも低い第２圧力
に設定しているので、成膜装置１０の内部が高エネルギ
のプラズマで叩かれるのを防止できる。Further, when the plasma discharge is stably maintained, the pressure of the non-film-forming gas is set to the second pressure lower than the first pressure, so that the inside of the film-forming apparatus 10 is made of high-energy plasma. It can be prevented from being hit.

【００２９】なお、上述の実施例では、この発明をハー
ドディスク基板１４に対する成膜に適用した場合を示し
たが、この発明は、半導体装置，ＬＣＤ，機械部品また
は刃物等のような他の被処理体に対する成膜にも同様に
適用できる。In the above-described embodiment, the case where the present invention is applied to film formation on the hard disk substrate 14 has been described. However, the present invention is not limited to the case where the present invention is applied to other processing such as a semiconductor device, an LCD, a mechanical part or a blade. The same can be applied to film formation on a body.

【図面の簡単な説明】[Brief description of the drawings]

【図１】この発明の一実施例を示す図解図である。FIG. 1 is an illustrative view showing one embodiment of the present invention;

【図２】図１実施例で用いられるプラズマ生成装置を示
す図解図である。FIG. 2 is an illustrative view showing a plasma generating apparatus used in the embodiment in FIG. 1;

【図３】ガス圧の経時変化を示すタイミングチャートで
ある。FIG. 3 is a timing chart showing a change over time in gas pressure.

【符号の説明】[Explanation of symbols]

１０ …成膜装置 １２ …搬送機 １４ …基板 ２６ …プラズマＣＶＤ装置 ２８ …成膜チャンバ ３０ …プラズマ生成装置 ４６ …マスフローコントローラ ４８ …ピエゾバルブ ５０ …切替バルブ DESCRIPTION OF SYMBOLS 10 ... Film-forming apparatus 12 ... Carrier 14 ... Substrate 26 ... Plasma CVD apparatus 28 ... Film-forming chamber 30 ... Plasma generation apparatus 46 ... Mass flow controller 48 ... Piezo valve 50 ... Switching valve

───────────────────────────────────────────────────── フロントページの続き (72)発明者 早川 義人 兵庫県伊丹市奥畑５丁目10番地 株式会社 クボタ内 (72)発明者 前田 誠 兵庫県伊丹市奥畑５丁目10番地 株式会社 クボタ内 (72)発明者 原 裕紀 兵庫県伊丹市奥畑５丁目10番地 株式会社 クボタ内 (72)発明者 久保田 昌実 兵庫県伊丹市奥畑５丁目10番地 株式会社 クボタ内 Ｆターム(参考） 4K030 AA09 AA16 BA28 BB12 CA12 EA03 FA02 HA04 JA09 KA30 LA19 5F045 AA08 AB07 AC01 BB08 EE02 EE14 EE19 EH19 EN04 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Yoshito Hayakawa 5-10-10 Okuhata, Itami-shi, Hyogo Pref. (72) Inventor Makoto Maeda 5-10-10 Okuhata, Itami-shi, Hyogo Pref. (72) Inventor Hiroki Hara 5-10 Okuhata, Itami City, Hyogo Prefecture Inside Kubota Corporation (72) Inventor Masami Kubota 5-10-10 Okuhata, Itami City, Hyogo Prefecture F-term in Kubota Corporation (reference) 4K030 AA09 AA16 BA28 BB12 CA12 EA03 FA02 HA04 JA09 KA30 LA19 5F045 AA08 AB07 AC01 BB08 EE02 EE14 EE19 EH19 EN04

Claims (3)

Translated fromJapanese
【特許請求の範囲】[Claims]【請求項１】被処理体を収容する成膜チャンバ、 非成膜ガスおよび成膜ガスを切り替えながら前記成膜チ
ャンバへ連続的に導入するガス導入手段、 前記非成膜ガスおよび前記成膜ガスをプラズマ化するプ
ラズマ生成手段、および前記非成膜ガスおよび前記成膜
ガスの圧力を制御する圧力制御手段を備え、 前記非成膜ガスを第１圧力でスパイク導入してプラズマ
を発生させ、前記非成膜ガスを前記第１圧力より低い第
２圧力で導入して前記プラズマを持続させ、前記非成膜
ガスに替えて前記成膜ガスを導入して成膜する、成膜装
置。A film forming chamber for accommodating an object to be processed; gas introducing means for continuously introducing a non-film forming gas and a film forming gas into the film forming chamber while switching the film forming gas; the non-film forming gas and the film forming gas Plasma generating means for converting the non-film-forming gas and the pressure of the film-forming gas into a plasma, and spike-introducing the non-film-forming gas at a first pressure to generate plasma; A film forming apparatus for introducing a non-film-forming gas at a second pressure lower than the first pressure to maintain the plasma, and introducing the film-forming gas instead of the non-film-forming gas to form a film.【請求項２】前記成膜ガスを前記第１圧力より低くかつ
前記第２圧力より高い第３圧力で導入する、請求項１記
載の成膜装置。2. The film forming apparatus according to claim 1, wherein said film forming gas is introduced at a third pressure lower than said first pressure and higher than said second pressure.【請求項３】成膜後、前記成膜ガスに替えて前記非成膜
ガスを前記第２圧力で連続的に導入する、請求項１また
は２記載の成膜装置。3. The film forming apparatus according to claim 1, wherein, after forming the film, the non-film forming gas is continuously introduced at the second pressure in place of the film forming gas.
JP2000018887A2000-01-272000-01-27 Film forming equipmentWithdrawnJP2001207265A (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
JP2000018887AJP2001207265A (en)2000-01-272000-01-27 Film forming equipment

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
JP2000018887AJP2001207265A (en)2000-01-272000-01-27 Film forming equipment

Publications (1)

Publication NumberPublication Date
JP2001207265Atrue JP2001207265A (en)2001-07-31

Family

ID=18545675

Family Applications (1)

Application NumberTitlePriority DateFiling Date
JP2000018887AWithdrawnJP2001207265A (en)2000-01-272000-01-27 Film forming equipment

Country Status (1)

CountryLink
JP (1)JP2001207265A (en)

Cited By (339)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
KR100851237B1 (en)2007-03-152008-08-20피에스케이 주식회사 Substrate Processing Method
JP2008226891A (en)*2007-03-082008-09-25Hitachi High-Technologies Corp Plasma processing method
JP2012506151A (en)*2008-10-142012-03-08アプライド マテリアルズ インコーポレイテッド Method for depositing conformal amorphous carbon films by plasma enhanced chemical vapor deposition (PECVD)
JP2014051738A (en)*2012-09-052014-03-20Asm Ip Holding BvMethod for stabilizing plasma generation
US10312129B2 (en)2015-09-292019-06-04Asm Ip Holding B.V.Variable adjustment for precise matching of multiple chamber cavity housings
US10340135B2 (en)2016-11-282019-07-02Asm Ip Holding B.V.Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
US10378106B2 (en)2008-11-142019-08-13Asm Ip Holding B.V.Method of forming insulation film by modified PEALD
US10381219B1 (en)2018-10-252019-08-13Asm Ip Holding B.V.Methods for forming a silicon nitride film
US10388509B2 (en)2016-06-282019-08-20Asm Ip Holding B.V.Formation of epitaxial layers via dislocation filtering
US10388513B1 (en)2018-07-032019-08-20Asm Ip Holding B.V.Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10395919B2 (en)2016-07-282019-08-27Asm Ip Holding B.V.Method and apparatus for filling a gap
US10403504B2 (en)2017-10-052019-09-03Asm Ip Holding B.V.Method for selectively depositing a metallic film on a substrate
US10410943B2 (en)2016-10-132019-09-10Asm Ip Holding B.V.Method for passivating a surface of a semiconductor and related systems
US10438965B2 (en)2014-12-222019-10-08Asm Ip Holding B.V.Semiconductor device and manufacturing method thereof
US10435790B2 (en)2016-11-012019-10-08Asm Ip Holding B.V.Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10446393B2 (en)2017-05-082019-10-15Asm Ip Holding B.V.Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10458018B2 (en)2015-06-262019-10-29Asm Ip Holding B.V.Structures including metal carbide material, devices including the structures, and methods of forming same
US10468251B2 (en)2016-02-192019-11-05Asm Ip Holding B.V.Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US10468261B2 (en)2017-02-152019-11-05Asm Ip Holding B.V.Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10483099B1 (en)2018-07-262019-11-19Asm Ip Holding B.V.Method for forming thermally stable organosilicon polymer film
US10480072B2 (en)2009-04-062019-11-19Asm Ip Holding B.V.Semiconductor processing reactor and components thereof
US10504742B2 (en)2017-05-312019-12-10Asm Ip Holding B.V.Method of atomic layer etching using hydrogen plasma
US10510536B2 (en)2018-03-292019-12-17Asm Ip Holding B.V.Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
US10529563B2 (en)2017-03-292020-01-07Asm Ip Holdings B.V.Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10529542B2 (en)2015-03-112020-01-07Asm Ip Holdings B.V.Cross-flow reactor and method
US10535516B2 (en)2018-02-012020-01-14Asm Ip Holdings B.V.Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
US10541333B2 (en)2017-07-192020-01-21Asm Ip Holding B.V.Method for depositing a group IV semiconductor and related semiconductor device structures
US10541173B2 (en)2016-07-082020-01-21Asm Ip Holding B.V.Selective deposition method to form air gaps
US10559458B1 (en)2018-11-262020-02-11Asm Ip Holding B.V.Method of forming oxynitride film
US10561975B2 (en)2014-10-072020-02-18Asm Ip Holdings B.V.Variable conductance gas distribution apparatus and method
US10566223B2 (en)2012-08-282020-02-18Asm Ip Holdings B.V.Systems and methods for dynamic semiconductor process scheduling
US10590535B2 (en)2017-07-262020-03-17Asm Ip Holdings B.V.Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10600673B2 (en)2015-07-072020-03-24Asm Ip Holding B.V.Magnetic susceptor to baseplate seal
US10605530B2 (en)2017-07-262020-03-31Asm Ip Holding B.V.Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US10607895B2 (en)2017-09-182020-03-31Asm Ip Holdings B.V.Method for forming a semiconductor device structure comprising a gate fill metal
US10604847B2 (en)2014-03-182020-03-31Asm Ip Holding B.V.Gas distribution system, reactor including the system, and methods of using the same
USD880437S1 (en)2018-02-012020-04-07Asm Ip Holding B.V.Gas supply plate for semiconductor manufacturing apparatus
US10612136B2 (en)2018-06-292020-04-07ASM IP Holding, B.V.Temperature-controlled flange and reactor system including same
US10612137B2 (en)2016-07-082020-04-07Asm Ip Holdings B.V.Organic reactants for atomic layer deposition
US10622375B2 (en)2016-11-072020-04-14Asm Ip Holding B.V.Method of processing a substrate and a device manufactured by using the method
US10643826B2 (en)2016-10-262020-05-05Asm Ip Holdings B.V.Methods for thermally calibrating reaction chambers
US10658181B2 (en)2018-02-202020-05-19Asm Ip Holding B.V.Method of spacer-defined direct patterning in semiconductor fabrication
US10658205B2 (en)2017-09-282020-05-19Asm Ip Holdings B.V.Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10655221B2 (en)2017-02-092020-05-19Asm Ip Holding B.V.Method for depositing oxide film by thermal ALD and PEALD
US10665452B2 (en)2016-05-022020-05-26Asm Ip Holdings B.V.Source/drain performance through conformal solid state doping
US10672636B2 (en)2017-08-092020-06-02Asm Ip Holding B.V.Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US10685834B2 (en)2017-07-052020-06-16Asm Ip Holdings B.V.Methods for forming a silicon germanium tin layer and related semiconductor device structures
US10683571B2 (en)2014-02-252020-06-16Asm Ip Holding B.V.Gas supply manifold and method of supplying gases to chamber using same
US10692741B2 (en)2017-08-082020-06-23Asm Ip Holdings B.V.Radiation shield
US10707106B2 (en)2011-06-062020-07-07Asm Ip Holding B.V.High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US10714350B2 (en)2016-11-012020-07-14ASM IP Holdings, B.V.Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10714335B2 (en)2017-04-252020-07-14Asm Ip Holding B.V.Method of depositing thin film and method of manufacturing semiconductor device
US10714315B2 (en)2012-10-122020-07-14Asm Ip Holdings B.V.Semiconductor reaction chamber showerhead
US10714385B2 (en)2016-07-192020-07-14Asm Ip Holding B.V.Selective deposition of tungsten
US10720322B2 (en)2016-02-192020-07-21Asm Ip Holding B.V.Method for forming silicon nitride film selectively on top surface
US10720331B2 (en)2016-11-012020-07-21ASM IP Holdings, B.V.Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10734497B2 (en)2017-07-182020-08-04Asm Ip Holding B.V.Methods for forming a semiconductor device structure and related semiconductor device structures
US10734223B2 (en)2017-10-102020-08-04Asm Ip Holding B.V.Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10731249B2 (en)2018-02-152020-08-04Asm Ip Holding B.V.Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US10734244B2 (en)2017-11-162020-08-04Asm Ip Holding B.V.Method of processing a substrate and a device manufactured by the same
US10741385B2 (en)2016-07-282020-08-11Asm Ip Holding B.V.Method and apparatus for filling a gap
US10755922B2 (en)2018-07-032020-08-25Asm Ip Holding B.V.Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10770286B2 (en)2017-05-082020-09-08Asm Ip Holdings B.V.Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10770336B2 (en)2017-08-082020-09-08Asm Ip Holding B.V.Substrate lift mechanism and reactor including same
US10767789B2 (en)2018-07-162020-09-08Asm Ip Holding B.V.Diaphragm valves, valve components, and methods for forming valve components
US10784102B2 (en)2016-12-222020-09-22Asm Ip Holding B.V.Method of forming a structure on a substrate
US10787741B2 (en)2014-08-212020-09-29Asm Ip Holding B.V.Method and system for in situ formation of gas-phase compounds
US10797133B2 (en)2018-06-212020-10-06Asm Ip Holding B.V.Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
US10804098B2 (en)2009-08-142020-10-13Asm Ip Holding B.V.Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US10811256B2 (en)2018-10-162020-10-20Asm Ip Holding B.V.Method for etching a carbon-containing feature
USD900036S1 (en)2017-08-242020-10-27Asm Ip Holding B.V.Heater electrical connector and adapter
US10818758B2 (en)2018-11-162020-10-27Asm Ip Holding B.V.Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10832903B2 (en)2011-10-282020-11-10Asm Ip Holding B.V.Process feed management for semiconductor substrate processing
US10829852B2 (en)2018-08-162020-11-10Asm Ip Holding B.V.Gas distribution device for a wafer processing apparatus
US10847366B2 (en)2018-11-162020-11-24Asm Ip Holding B.V.Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10847365B2 (en)2018-10-112020-11-24Asm Ip Holding B.V.Method of forming conformal silicon carbide film by cyclic CVD
US10847371B2 (en)2018-03-272020-11-24Asm Ip Holding B.V.Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US10844484B2 (en)2017-09-222020-11-24Asm Ip Holding B.V.Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10851456B2 (en)2016-04-212020-12-01Asm Ip Holding B.V.Deposition of metal borides
US10854498B2 (en)2011-07-152020-12-01Asm Ip Holding B.V.Wafer-supporting device and method for producing same
USD903477S1 (en)2018-01-242020-12-01Asm Ip Holdings B.V.Metal clamp
US10858737B2 (en)2014-07-282020-12-08Asm Ip Holding B.V.Showerhead assembly and components thereof
US10865475B2 (en)2016-04-212020-12-15Asm Ip Holding B.V.Deposition of metal borides and silicides
US10867786B2 (en)2018-03-302020-12-15Asm Ip Holding B.V.Substrate processing method
US10867788B2 (en)2016-12-282020-12-15Asm Ip Holding B.V.Method of forming a structure on a substrate
US10872771B2 (en)2018-01-162020-12-22Asm Ip Holding B. V.Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
US10883175B2 (en)2018-08-092021-01-05Asm Ip Holding B.V.Vertical furnace for processing substrates and a liner for use therein
US10886123B2 (en)2017-06-022021-01-05Asm Ip Holding B.V.Methods for forming low temperature semiconductor layers and related semiconductor device structures
US10892156B2 (en)2017-05-082021-01-12Asm Ip Holding B.V.Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10896820B2 (en)2018-02-142021-01-19Asm Ip Holding B.V.Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10910262B2 (en)2017-11-162021-02-02Asm Ip Holding B.V.Method of selectively depositing a capping layer structure on a semiconductor device structure
US10914004B2 (en)2018-06-292021-02-09Asm Ip Holding B.V.Thin-film deposition method and manufacturing method of semiconductor device
US10923344B2 (en)2017-10-302021-02-16Asm Ip Holding B.V.Methods for forming a semiconductor structure and related semiconductor structures
US10928731B2 (en)2017-09-212021-02-23Asm Ip Holding B.V.Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same
US10934619B2 (en)2016-11-152021-03-02Asm Ip Holding B.V.Gas supply unit and substrate processing apparatus including the gas supply unit
US10941490B2 (en)2014-10-072021-03-09Asm Ip Holding B.V.Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US10975470B2 (en)2018-02-232021-04-13Asm Ip Holding B.V.Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11001925B2 (en)2016-12-192021-05-11Asm Ip Holding B.V.Substrate processing apparatus
US11018047B2 (en)2018-01-252021-05-25Asm Ip Holding B.V.Hybrid lift pin
US11015245B2 (en)2014-03-192021-05-25Asm Ip Holding B.V.Gas-phase reactor and system having exhaust plenum and components thereof
US11018002B2 (en)2017-07-192021-05-25Asm Ip Holding B.V.Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US11022879B2 (en)2017-11-242021-06-01Asm Ip Holding B.V.Method of forming an enhanced unexposed photoresist layer
US11024523B2 (en)2018-09-112021-06-01Asm Ip Holding B.V.Substrate processing apparatus and method
US11031242B2 (en)2018-11-072021-06-08Asm Ip Holding B.V.Methods for depositing a boron doped silicon germanium film
USD922229S1 (en)2019-06-052021-06-15Asm Ip Holding B.V.Device for controlling a temperature of a gas supply unit
US11049751B2 (en)2018-09-142021-06-29Asm Ip Holding B.V.Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
US11053591B2 (en)2018-08-062021-07-06Asm Ip Holding B.V.Multi-port gas injection system and reactor system including same
US11056567B2 (en)2018-05-112021-07-06Asm Ip Holding B.V.Method of forming a doped metal carbide film on a substrate and related semiconductor device structures
US11056344B2 (en)2017-08-302021-07-06Asm Ip Holding B.V.Layer forming method
US11069510B2 (en)2017-08-302021-07-20Asm Ip Holding B.V.Substrate processing apparatus
US11081345B2 (en)2018-02-062021-08-03Asm Ip Holding B.V.Method of post-deposition treatment for silicon oxide film
US11088002B2 (en)2018-03-292021-08-10Asm Ip Holding B.V.Substrate rack and a substrate processing system and method
US11087997B2 (en)2018-10-312021-08-10Asm Ip Holding B.V.Substrate processing apparatus for processing substrates
US11101370B2 (en)2016-05-022021-08-24Asm Ip Holding B.V.Method of forming a germanium oxynitride film
US11114294B2 (en)2019-03-082021-09-07Asm Ip Holding B.V.Structure including SiOC layer and method of forming same
US11114283B2 (en)2018-03-162021-09-07Asm Ip Holding B.V.Reactor, system including the reactor, and methods of manufacturing and using same
USD930782S1 (en)2019-08-222021-09-14Asm Ip Holding B.V.Gas distributor
US11127617B2 (en)2017-11-272021-09-21Asm Ip Holding B.V.Storage device for storing wafer cassettes for use with a batch furnace
US11127589B2 (en)2019-02-012021-09-21Asm Ip Holding B.V.Method of topology-selective film formation of silicon oxide
USD931978S1 (en)2019-06-272021-09-28Asm Ip Holding B.V.Showerhead vacuum transport
US11139191B2 (en)2017-08-092021-10-05Asm Ip Holding B.V.Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11139308B2 (en)2015-12-292021-10-05Asm Ip Holding B.V.Atomic layer deposition of III-V compounds to form V-NAND devices
US11158513B2 (en)2018-12-132021-10-26Asm Ip Holding B.V.Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
US11171025B2 (en)2019-01-222021-11-09Asm Ip Holding B.V.Substrate processing device
USD935572S1 (en)2019-05-242021-11-09Asm Ip Holding B.V.Gas channel plate
US11205585B2 (en)2016-07-282021-12-21Asm Ip Holding B.V.Substrate processing apparatus and method of operating the same
US11217444B2 (en)2018-11-302022-01-04Asm Ip Holding B.V.Method for forming an ultraviolet radiation responsive metal oxide-containing film
US11222772B2 (en)2016-12-142022-01-11Asm Ip Holding B.V.Substrate processing apparatus
USD940837S1 (en)2019-08-222022-01-11Asm Ip Holding B.V.Electrode
US11227789B2 (en)2019-02-202022-01-18Asm Ip Holding B.V.Method and apparatus for filling a recess formed within a substrate surface
US11227782B2 (en)2019-07-312022-01-18Asm Ip Holding B.V.Vertical batch furnace assembly
US11230766B2 (en)2018-03-292022-01-25Asm Ip Holding B.V.Substrate processing apparatus and method
US11232963B2 (en)2018-10-032022-01-25Asm Ip Holding B.V.Substrate processing apparatus and method
US11233133B2 (en)2015-10-212022-01-25Asm Ip Holding B.V.NbMC layers
US11251068B2 (en)2018-10-192022-02-15Asm Ip Holding B.V.Substrate processing apparatus and substrate processing method
US11251040B2 (en)2019-02-202022-02-15Asm Ip Holding B.V.Cyclical deposition method including treatment step and apparatus for same
USD944946S1 (en)2019-06-142022-03-01Asm Ip Holding B.V.Shower plate
US11270899B2 (en)2018-06-042022-03-08Asm Ip Holding B.V.Wafer handling chamber with moisture reduction
US11274369B2 (en)2018-09-112022-03-15Asm Ip Holding B.V.Thin film deposition method
US11282698B2 (en)2019-07-192022-03-22Asm Ip Holding B.V.Method of forming topology-controlled amorphous carbon polymer film
US11286558B2 (en)2019-08-232022-03-29Asm Ip Holding B.V.Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US11289326B2 (en)2019-05-072022-03-29Asm Ip Holding B.V.Method for reforming amorphous carbon polymer film
US11286562B2 (en)2018-06-082022-03-29Asm Ip Holding B.V.Gas-phase chemical reactor and method of using same
US11295980B2 (en)2017-08-302022-04-05Asm Ip Holding B.V.Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
USD947913S1 (en)2019-05-172022-04-05Asm Ip Holding B.V.Susceptor shaft
USD948463S1 (en)2018-10-242022-04-12Asm Ip Holding B.V.Susceptor for semiconductor substrate supporting apparatus
US11306395B2 (en)2017-06-282022-04-19Asm Ip Holding B.V.Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
USD949319S1 (en)2019-08-222022-04-19Asm Ip Holding B.V.Exhaust duct
US11315794B2 (en)2019-10-212022-04-26Asm Ip Holding B.V.Apparatus and methods for selectively etching films
US11342216B2 (en)2019-02-202022-05-24Asm Ip Holding B.V.Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
US11339476B2 (en)2019-10-082022-05-24Asm Ip Holding B.V.Substrate processing device having connection plates, substrate processing method
US11345999B2 (en)2019-06-062022-05-31Asm Ip Holding B.V.Method of using a gas-phase reactor system including analyzing exhausted gas
US11355338B2 (en)2019-05-102022-06-07Asm Ip Holding B.V.Method of depositing material onto a surface and structure formed according to the method
US11361990B2 (en)2018-05-282022-06-14Asm Ip Holding B.V.Substrate processing method and device manufactured by using the same
US11374112B2 (en)2017-07-192022-06-28Asm Ip Holding B.V.Method for depositing a group IV semiconductor and related semiconductor device structures
US11378337B2 (en)2019-03-282022-07-05Asm Ip Holding B.V.Door opener and substrate processing apparatus provided therewith
US11390950B2 (en)2017-01-102022-07-19Asm Ip Holding B.V.Reactor system and method to reduce residue buildup during a film deposition process
US11390945B2 (en)2019-07-032022-07-19Asm Ip Holding B.V.Temperature control assembly for substrate processing apparatus and method of using same
US11390946B2 (en)2019-01-172022-07-19Asm Ip Holding B.V.Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
US11393690B2 (en)2018-01-192022-07-19Asm Ip Holding B.V.Deposition method
US11401605B2 (en)2019-11-262022-08-02Asm Ip Holding B.V.Substrate processing apparatus
US11414760B2 (en)2018-10-082022-08-16Asm Ip Holding B.V.Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same
US11424119B2 (en)2019-03-082022-08-23Asm Ip Holding B.V.Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
US11430674B2 (en)2018-08-222022-08-30Asm Ip Holding B.V.Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11430640B2 (en)2019-07-302022-08-30Asm Ip Holding B.V.Substrate processing apparatus
US11437241B2 (en)2020-04-082022-09-06Asm Ip Holding B.V.Apparatus and methods for selectively etching silicon oxide films
US11443926B2 (en)2019-07-302022-09-13Asm Ip Holding B.V.Substrate processing apparatus
US11447861B2 (en)2016-12-152022-09-20Asm Ip Holding B.V.Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11447864B2 (en)2019-04-192022-09-20Asm Ip Holding B.V.Layer forming method and apparatus
USD965044S1 (en)2019-08-192022-09-27Asm Ip Holding B.V.Susceptor shaft
US11453943B2 (en)2016-05-252022-09-27Asm Ip Holding B.V.Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
USD965524S1 (en)2019-08-192022-10-04Asm Ip Holding B.V.Susceptor support
US11469098B2 (en)2018-05-082022-10-11Asm Ip Holding B.V.Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
US11473195B2 (en)2018-03-012022-10-18Asm Ip Holding B.V.Semiconductor processing apparatus and a method for processing a substrate
US11476109B2 (en)2019-06-112022-10-18Asm Ip Holding B.V.Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
US11482533B2 (en)2019-02-202022-10-25Asm Ip Holding B.V.Apparatus and methods for plug fill deposition in 3-D NAND applications
US11482412B2 (en)2018-01-192022-10-25Asm Ip Holding B.V.Method for depositing a gap-fill layer by plasma-assisted deposition
US11482418B2 (en)2018-02-202022-10-25Asm Ip Holding B.V.Substrate processing method and apparatus
US11488854B2 (en)2020-03-112022-11-01Asm Ip Holding B.V.Substrate handling device with adjustable joints
US11488819B2 (en)2018-12-042022-11-01Asm Ip Holding B.V.Method of cleaning substrate processing apparatus
US11495459B2 (en)2019-09-042022-11-08Asm Ip Holding B.V.Methods for selective deposition using a sacrificial capping layer
US11492703B2 (en)2018-06-272022-11-08Asm Ip Holding B.V.Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11499226B2 (en)2018-11-022022-11-15Asm Ip Holding B.V.Substrate supporting unit and a substrate processing device including the same
US11501968B2 (en)2019-11-152022-11-15Asm Ip Holding B.V.Method for providing a semiconductor device with silicon filled gaps
US11499222B2 (en)2018-06-272022-11-15Asm Ip Holding B.V.Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11515188B2 (en)2019-05-162022-11-29Asm Ip Holding B.V.Wafer boat handling device, vertical batch furnace and method
US11515187B2 (en)2020-05-012022-11-29Asm Ip Holding B.V.Fast FOUP swapping with a FOUP handler
US11521851B2 (en)2020-02-032022-12-06Asm Ip Holding B.V.Method of forming structures including a vanadium or indium layer
US11527400B2 (en)2019-08-232022-12-13Asm Ip Holding B.V.Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
US11527403B2 (en)2019-12-192022-12-13Asm Ip Holding B.V.Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11530876B2 (en)2020-04-242022-12-20Asm Ip Holding B.V.Vertical batch furnace assembly comprising a cooling gas supply
US11532757B2 (en)2016-10-272022-12-20Asm Ip Holding B.V.Deposition of charge trapping layers
US11530483B2 (en)2018-06-212022-12-20Asm Ip Holding B.V.Substrate processing system
US11551912B2 (en)2020-01-202023-01-10Asm Ip Holding B.V.Method of forming thin film and method of modifying surface of thin film
US11551925B2 (en)2019-04-012023-01-10Asm Ip Holding B.V.Method for manufacturing a semiconductor device
USD975665S1 (en)2019-05-172023-01-17Asm Ip Holding B.V.Susceptor shaft
US11557474B2 (en)2019-07-292023-01-17Asm Ip Holding B.V.Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
US11562901B2 (en)2019-09-252023-01-24Asm Ip Holding B.V.Substrate processing method
US11572620B2 (en)2018-11-062023-02-07Asm Ip Holding B.V.Methods for selectively depositing an amorphous silicon film on a substrate
US11581186B2 (en)2016-12-152023-02-14Asm Ip Holding B.V.Sequential infiltration synthesis apparatus
US11587814B2 (en)2019-07-312023-02-21Asm Ip Holding B.V.Vertical batch furnace assembly
US11587815B2 (en)2019-07-312023-02-21Asm Ip Holding B.V.Vertical batch furnace assembly
USD979506S1 (en)2019-08-222023-02-28Asm Ip Holding B.V.Insulator
US11594450B2 (en)2019-08-222023-02-28Asm Ip Holding B.V.Method for forming a structure with a hole
US11594600B2 (en)2019-11-052023-02-28Asm Ip Holding B.V.Structures with doped semiconductor layers and methods and systems for forming same
USD980814S1 (en)2021-05-112023-03-14Asm Ip Holding B.V.Gas distributor for substrate processing apparatus
US11605528B2 (en)2019-07-092023-03-14Asm Ip Holding B.V.Plasma device using coaxial waveguide, and substrate treatment method
USD980813S1 (en)2021-05-112023-03-14Asm Ip Holding B.V.Gas flow control plate for substrate processing apparatus
US11610775B2 (en)2016-07-282023-03-21Asm Ip Holding B.V.Method and apparatus for filling a gap
US11610774B2 (en)2019-10-022023-03-21Asm Ip Holding B.V.Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process
USD981973S1 (en)2021-05-112023-03-28Asm Ip Holding B.V.Reactor wall for substrate processing apparatus
US11615970B2 (en)2019-07-172023-03-28Asm Ip Holding B.V.Radical assist ignition plasma system and method
US11626308B2 (en)2020-05-132023-04-11Asm Ip Holding B.V.Laser alignment fixture for a reactor system
US11626316B2 (en)2019-11-202023-04-11Asm Ip Holding B.V.Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
US11629406B2 (en)2018-03-092023-04-18Asm Ip Holding B.V.Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11629407B2 (en)2019-02-222023-04-18Asm Ip Holding B.V.Substrate processing apparatus and method for processing substrates
US11637011B2 (en)2019-10-162023-04-25Asm Ip Holding B.V.Method of topology-selective film formation of silicon oxide
US11637014B2 (en)2019-10-172023-04-25Asm Ip Holding B.V.Methods for selective deposition of doped semiconductor material
US11639548B2 (en)2019-08-212023-05-02Asm Ip Holding B.V.Film-forming material mixed-gas forming device and film forming device
US11639811B2 (en)2017-11-272023-05-02Asm Ip Holding B.V.Apparatus including a clean mini environment
US11644758B2 (en)2020-07-172023-05-09Asm Ip Holding B.V.Structures and methods for use in photolithography
US11646204B2 (en)2020-06-242023-05-09Asm Ip Holding B.V.Method for forming a layer provided with silicon
US11646205B2 (en)2019-10-292023-05-09Asm Ip Holding B.V.Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
US11643724B2 (en)2019-07-182023-05-09Asm Ip Holding B.V.Method of forming structures using a neutral beam
US11646184B2 (en)2019-11-292023-05-09Asm Ip Holding B.V.Substrate processing apparatus
US11658035B2 (en)2020-06-302023-05-23Asm Ip Holding B.V.Substrate processing method
US11658029B2 (en)2018-12-142023-05-23Asm Ip Holding B.V.Method of forming a device structure using selective deposition of gallium nitride and system for same
US11664245B2 (en)2019-07-162023-05-30Asm Ip Holding B.V.Substrate processing device
US11664199B2 (en)2018-10-192023-05-30Asm Ip Holding B.V.Substrate processing apparatus and substrate processing method
US11664267B2 (en)2019-07-102023-05-30Asm Ip Holding B.V.Substrate support assembly and substrate processing device including the same
US11674220B2 (en)2020-07-202023-06-13Asm Ip Holding B.V.Method for depositing molybdenum layers using an underlayer
US11680839B2 (en)2019-08-052023-06-20Asm Ip Holding B.V.Liquid level sensor for a chemical source vessel
USD990534S1 (en)2020-09-112023-06-27Asm Ip Holding B.V.Weighted lift pin
USD990441S1 (en)2021-09-072023-06-27Asm Ip Holding B.V.Gas flow control plate
US11685991B2 (en)2018-02-142023-06-27Asm Ip Holding B.V.Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US11688603B2 (en)2019-07-172023-06-27Asm Ip Holding B.V.Methods of forming silicon germanium structures
US11705333B2 (en)2020-05-212023-07-18Asm Ip Holding B.V.Structures including multiple carbon layers and methods of forming and using same
US11718913B2 (en)2018-06-042023-08-08Asm Ip Holding B.V.Gas distribution system and reactor system including same
US11725280B2 (en)2020-08-262023-08-15Asm Ip Holding B.V.Method for forming metal silicon oxide and metal silicon oxynitride layers
US11725277B2 (en)2011-07-202023-08-15Asm Ip Holding B.V.Pressure transmitter for a semiconductor processing environment
US11735422B2 (en)2019-10-102023-08-22Asm Ip Holding B.V.Method of forming a photoresist underlayer and structure including same
US11742198B2 (en)2019-03-082023-08-29Asm Ip Holding B.V.Structure including SiOCN layer and method of forming same
US11742189B2 (en)2015-03-122023-08-29Asm Ip Holding B.V.Multi-zone reactor, system including the reactor, and method of using the same
US11769682B2 (en)2017-08-092023-09-26Asm Ip Holding B.V.Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11767589B2 (en)2020-05-292023-09-26Asm Ip Holding B.V.Substrate processing device
US11776846B2 (en)2020-02-072023-10-03Asm Ip Holding B.V.Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en)2020-02-172023-10-10Asm Ip Holding B.V.Method for depositing low temperature phosphorous-doped silicon
US11781221B2 (en)2019-05-072023-10-10Asm Ip Holding B.V.Chemical source vessel with dip tube
US11804364B2 (en)2020-05-192023-10-31Asm Ip Holding B.V.Substrate processing apparatus
US11814747B2 (en)2019-04-242023-11-14Asm Ip Holding B.V.Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly
US11823866B2 (en)2020-04-022023-11-21Asm Ip Holding B.V.Thin film forming method
US11821078B2 (en)2020-04-152023-11-21Asm Ip Holding B.V.Method for forming precoat film and method for forming silicon-containing film
US11823876B2 (en)2019-09-052023-11-21Asm Ip Holding B.V.Substrate processing apparatus
US11827981B2 (en)2020-10-142023-11-28Asm Ip Holding B.V.Method of depositing material on stepped structure
US11828707B2 (en)2020-02-042023-11-28Asm Ip Holding B.V.Method and apparatus for transmittance measurements of large articles
US11830730B2 (en)2017-08-292023-11-28Asm Ip Holding B.V.Layer forming method and apparatus
US11830738B2 (en)2020-04-032023-11-28Asm Ip Holding B.V.Method for forming barrier layer and method for manufacturing semiconductor device
US11840761B2 (en)2019-12-042023-12-12Asm Ip Holding B.V.Substrate processing apparatus
US11876356B2 (en)2020-03-112024-01-16Asm Ip Holding B.V.Lockout tagout assembly and system and method of using same
US11873557B2 (en)2020-10-222024-01-16Asm Ip Holding B.V.Method of depositing vanadium metal
US11885020B2 (en)2020-12-222024-01-30Asm Ip Holding B.V.Transition metal deposition method
US11885013B2 (en)2019-12-172024-01-30Asm Ip Holding B.V.Method of forming vanadium nitride layer and structure including the vanadium nitride layer
US11885023B2 (en)2018-10-012024-01-30Asm Ip Holding B.V.Substrate retaining apparatus, system including the apparatus, and method of using same
USD1012873S1 (en)2020-09-242024-01-30Asm Ip Holding B.V.Electrode for semiconductor processing apparatus
US11887857B2 (en)2020-04-242024-01-30Asm Ip Holding B.V.Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
US11891696B2 (en)2020-11-302024-02-06Asm Ip Holding B.V.Injector configured for arrangement within a reaction chamber of a substrate processing apparatus
US11898243B2 (en)2020-04-242024-02-13Asm Ip Holding B.V.Method of forming vanadium nitride-containing layer
US11901179B2 (en)2020-10-282024-02-13Asm Ip Holding B.V.Method and device for depositing silicon onto substrates
US11915929B2 (en)2019-11-262024-02-27Asm Ip Holding B.V.Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
US11923181B2 (en)2019-11-292024-03-05Asm Ip Holding B.V.Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing
US11929251B2 (en)2019-12-022024-03-12Asm Ip Holding B.V.Substrate processing apparatus having electrostatic chuck and substrate processing method
US11946137B2 (en)2020-12-162024-04-02Asm Ip Holding B.V.Runout and wobble measurement fixtures
US11959168B2 (en)2020-04-292024-04-16Asm Ip Holding B.V.Solid source precursor vessel
US11961741B2 (en)2020-03-122024-04-16Asm Ip Holding B.V.Method for fabricating layer structure having target topological profile
US11967488B2 (en)2013-02-012024-04-23Asm Ip Holding B.V.Method for treatment of deposition reactor
US11976359B2 (en)2020-01-062024-05-07Asm Ip Holding B.V.Gas supply assembly, components thereof, and reactor system including same
US11986868B2 (en)2020-02-282024-05-21Asm Ip Holding B.V.System dedicated for parts cleaning
US11987881B2 (en)2020-05-222024-05-21Asm Ip Holding B.V.Apparatus for depositing thin films using hydrogen peroxide
US11996289B2 (en)2020-04-162024-05-28Asm Ip Holding B.V.Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
US11993843B2 (en)2017-08-312024-05-28Asm Ip Holding B.V.Substrate processing apparatus
US11996309B2 (en)2019-05-162024-05-28Asm Ip Holding B.V.Wafer boat handling device, vertical batch furnace and method
US11993847B2 (en)2020-01-082024-05-28Asm Ip Holding B.V.Injector
US11996292B2 (en)2019-10-252024-05-28Asm Ip Holding B.V.Methods for filling a gap feature on a substrate surface and related semiconductor structures
US12009224B2 (en)2020-09-292024-06-11Asm Ip Holding B.V.Apparatus and method for etching metal nitrides
US12006572B2 (en)2019-10-082024-06-11Asm Ip Holding B.V.Reactor system including a gas distribution assembly for use with activated species and method of using same
US12009241B2 (en)2019-10-142024-06-11Asm Ip Holding B.V.Vertical batch furnace assembly with detector to detect cassette
US12020934B2 (en)2020-07-082024-06-25Asm Ip Holding B.V.Substrate processing method
US12025484B2 (en)2018-05-082024-07-02Asm Ip Holding B.V.Thin film forming method
US12027365B2 (en)2020-11-242024-07-02Asm Ip Holding B.V.Methods for filling a gap and related systems and devices
US12033885B2 (en)2020-01-062024-07-09Asm Ip Holding B.V.Channeled lift pin
US12040177B2 (en)2020-08-182024-07-16Asm Ip Holding B.V.Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
US12040200B2 (en)2017-06-202024-07-16Asm Ip Holding B.V.Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US12040199B2 (en)2018-11-282024-07-16Asm Ip Holding B.V.Substrate processing apparatus for processing substrates
US12051567B2 (en)2020-10-072024-07-30Asm Ip Holding B.V.Gas supply unit and substrate processing apparatus including gas supply unit
US12057314B2 (en)2020-05-152024-08-06Asm Ip Holding B.V.Methods for silicon germanium uniformity control using multiple precursors
US12074022B2 (en)2020-08-272024-08-27Asm Ip Holding B.V.Method and system for forming patterned structures using multiple patterning process
US12087586B2 (en)2020-04-152024-09-10Asm Ip Holding B.V.Method of forming chromium nitride layer and structure including the chromium nitride layer
US12107005B2 (en)2020-10-062024-10-01Asm Ip Holding B.V.Deposition method and an apparatus for depositing a silicon-containing material
US12106944B2 (en)2020-06-022024-10-01Asm Ip Holding B.V.Rotating substrate support
US12112940B2 (en)2019-07-192024-10-08Asm Ip Holding B.V.Method of forming topology-controlled amorphous carbon polymer film
US12125700B2 (en)2020-01-162024-10-22Asm Ip Holding B.V.Method of forming high aspect ratio features
US12129545B2 (en)2020-12-222024-10-29Asm Ip Holding B.V.Precursor capsule, a vessel and a method
US12131885B2 (en)2020-12-222024-10-29Asm Ip Holding B.V.Plasma treatment device having matching box
US12148609B2 (en)2020-09-162024-11-19Asm Ip Holding B.V.Silicon oxide deposition method
US12154824B2 (en)2020-08-142024-11-26Asm Ip Holding B.V.Substrate processing method
US12159788B2 (en)2020-12-142024-12-03Asm Ip Holding B.V.Method of forming structures for threshold voltage control
US12169361B2 (en)2019-07-302024-12-17Asm Ip Holding B.V.Substrate processing apparatus and method
US12173404B2 (en)2020-03-172024-12-24Asm Ip Holding B.V.Method of depositing epitaxial material, structure formed using the method, and system for performing the method
US12195852B2 (en)2020-11-232025-01-14Asm Ip Holding B.V.Substrate processing apparatus with an injector
US12211742B2 (en)2020-09-102025-01-28Asm Ip Holding B.V.Methods for depositing gap filling fluid
US12209308B2 (en)2020-11-122025-01-28Asm Ip Holding B.V.Reactor and related methods
USD1060598S1 (en)2021-12-032025-02-04Asm Ip Holding B.V.Split showerhead cover
US12218000B2 (en)2020-09-252025-02-04Asm Ip Holding B.V.Semiconductor processing method
US12218269B2 (en)2020-02-132025-02-04Asm Ip Holding B.V.Substrate processing apparatus including light receiving device and calibration method of light receiving device
US12217954B2 (en)2020-08-252025-02-04Asm Ip Holding B.V.Method of cleaning a surface
US12217946B2 (en)2020-10-152025-02-04Asm Ip Holding B.V.Method of manufacturing semiconductor device, and substrate treatment apparatus using ether-CAT
US12221357B2 (en)2020-04-242025-02-11Asm Ip Holding B.V.Methods and apparatus for stabilizing vanadium compounds
US12230531B2 (en)2018-04-092025-02-18Asm Ip Holding B.V.Substrate supporting apparatus, substrate processing apparatus including the same, and substrate processing method
US12243742B2 (en)2020-04-212025-03-04Asm Ip Holding B.V.Method for processing a substrate
US12241158B2 (en)2020-07-202025-03-04Asm Ip Holding B.V.Method for forming structures including transition metal layers
US12243757B2 (en)2020-05-212025-03-04Asm Ip Holding B.V.Flange and apparatus for processing substrates
US12240760B2 (en)2016-03-182025-03-04Asm Ip Holding B.V.Aligned carbon nanotubes
US12243747B2 (en)2020-04-242025-03-04Asm Ip Holding B.V.Methods of forming structures including vanadium boride and vanadium phosphide layers
US12247286B2 (en)2019-08-092025-03-11Asm Ip Holding B.V.Heater assembly including cooling apparatus and method of using same
US12252785B2 (en)2019-06-102025-03-18Asm Ip Holding B.V.Method for cleaning quartz epitaxial chambers
US12255053B2 (en)2020-12-102025-03-18Asm Ip Holding B.V.Methods and systems for depositing a layer
US12266524B2 (en)2020-06-162025-04-01Asm Ip Holding B.V.Method for depositing boron containing silicon germanium layers
US12272527B2 (en)2018-05-092025-04-08Asm Ip Holding B.V.Apparatus for use with hydrogen radicals and method of using same
US12278129B2 (en)2020-03-042025-04-15Asm Ip Holding B.V.Alignment fixture for a reactor system
US12276023B2 (en)2017-08-042025-04-15Asm Ip Holding B.V.Showerhead assembly for distributing a gas within a reaction chamber
US12288710B2 (en)2020-12-182025-04-29Asm Ip Holding B.V.Wafer processing apparatus with a rotatable table
US12322591B2 (en)2020-07-272025-06-03Asm Ip Holding B.V.Thin film deposition process
US12378665B2 (en)2018-10-262025-08-05Asm Ip Holding B.V.High temperature coatings for a preclean and etch apparatus and related methods
US12406846B2 (en)2020-05-262025-09-02Asm Ip Holding B.V.Method for depositing boron and gallium containing silicon germanium layers
US12410515B2 (en)2020-01-292025-09-09Asm Ip Holding B.V.Contaminant trap system for a reactor system
US12428726B2 (en)2019-10-082025-09-30Asm Ip Holding B.V.Gas injection system and reactor system including same
US12431334B2 (en)2020-02-132025-09-30Asm Ip Holding B.V.Gas distribution assembly
US12431354B2 (en)2020-07-012025-09-30Asm Ip Holding B.V.Silicon nitride and silicon oxide deposition methods using fluorine inhibitor
US12444599B2 (en)2021-12-082025-10-14Asm Ip Holding B.V.Method for forming an ultraviolet radiation responsive metal oxide-containing film

Cited By (431)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JP2008226891A (en)*2007-03-082008-09-25Hitachi High-Technologies Corp Plasma processing method
US8277563B2 (en)2007-03-082012-10-02Hitachi High-Technologies CorporationPlasma processing method
KR100851237B1 (en)2007-03-152008-08-20피에스케이 주식회사 Substrate Processing Method
JP2012506151A (en)*2008-10-142012-03-08アプライド マテリアルズ インコーポレイテッド Method for depositing conformal amorphous carbon films by plasma enhanced chemical vapor deposition (PECVD)
US10378106B2 (en)2008-11-142019-08-13Asm Ip Holding B.V.Method of forming insulation film by modified PEALD
US10844486B2 (en)2009-04-062020-11-24Asm Ip Holding B.V.Semiconductor processing reactor and components thereof
US10480072B2 (en)2009-04-062019-11-19Asm Ip Holding B.V.Semiconductor processing reactor and components thereof
US10804098B2 (en)2009-08-142020-10-13Asm Ip Holding B.V.Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US10707106B2 (en)2011-06-062020-07-07Asm Ip Holding B.V.High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US10854498B2 (en)2011-07-152020-12-01Asm Ip Holding B.V.Wafer-supporting device and method for producing same
US11725277B2 (en)2011-07-202023-08-15Asm Ip Holding B.V.Pressure transmitter for a semiconductor processing environment
US10832903B2 (en)2011-10-282020-11-10Asm Ip Holding B.V.Process feed management for semiconductor substrate processing
US10566223B2 (en)2012-08-282020-02-18Asm Ip Holdings B.V.Systems and methods for dynamic semiconductor process scheduling
JP2014051738A (en)*2012-09-052014-03-20Asm Ip Holding BvMethod for stabilizing plasma generation
US10714315B2 (en)2012-10-122020-07-14Asm Ip Holdings B.V.Semiconductor reaction chamber showerhead
US11501956B2 (en)2012-10-122022-11-15Asm Ip Holding B.V.Semiconductor reaction chamber showerhead
US11967488B2 (en)2013-02-012024-04-23Asm Ip Holding B.V.Method for treatment of deposition reactor
US10683571B2 (en)2014-02-252020-06-16Asm Ip Holding B.V.Gas supply manifold and method of supplying gases to chamber using same
US10604847B2 (en)2014-03-182020-03-31Asm Ip Holding B.V.Gas distribution system, reactor including the system, and methods of using the same
US11015245B2 (en)2014-03-192021-05-25Asm Ip Holding B.V.Gas-phase reactor and system having exhaust plenum and components thereof
US10858737B2 (en)2014-07-282020-12-08Asm Ip Holding B.V.Showerhead assembly and components thereof
US10787741B2 (en)2014-08-212020-09-29Asm Ip Holding B.V.Method and system for in situ formation of gas-phase compounds
US11795545B2 (en)2014-10-072023-10-24Asm Ip Holding B.V.Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US10561975B2 (en)2014-10-072020-02-18Asm Ip Holdings B.V.Variable conductance gas distribution apparatus and method
US10941490B2 (en)2014-10-072021-03-09Asm Ip Holding B.V.Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US10438965B2 (en)2014-12-222019-10-08Asm Ip Holding B.V.Semiconductor device and manufacturing method thereof
US10529542B2 (en)2015-03-112020-01-07Asm Ip Holdings B.V.Cross-flow reactor and method
US11742189B2 (en)2015-03-122023-08-29Asm Ip Holding B.V.Multi-zone reactor, system including the reactor, and method of using the same
US11242598B2 (en)2015-06-262022-02-08Asm Ip Holding B.V.Structures including metal carbide material, devices including the structures, and methods of forming same
US10458018B2 (en)2015-06-262019-10-29Asm Ip Holding B.V.Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en)2015-07-072020-03-24Asm Ip Holding B.V.Magnetic susceptor to baseplate seal
US10312129B2 (en)2015-09-292019-06-04Asm Ip Holding B.V.Variable adjustment for precise matching of multiple chamber cavity housings
US11233133B2 (en)2015-10-212022-01-25Asm Ip Holding B.V.NbMC layers
US11139308B2 (en)2015-12-292021-10-05Asm Ip Holding B.V.Atomic layer deposition of III-V compounds to form V-NAND devices
US11956977B2 (en)2015-12-292024-04-09Asm Ip Holding B.V.Atomic layer deposition of III-V compounds to form V-NAND devices
US10720322B2 (en)2016-02-192020-07-21Asm Ip Holding B.V.Method for forming silicon nitride film selectively on top surface
US11676812B2 (en)2016-02-192023-06-13Asm Ip Holding B.V.Method for forming silicon nitride film selectively on top/bottom portions
US10468251B2 (en)2016-02-192019-11-05Asm Ip Holding B.V.Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US12240760B2 (en)2016-03-182025-03-04Asm Ip Holding B.V.Aligned carbon nanotubes
US10851456B2 (en)2016-04-212020-12-01Asm Ip Holding B.V.Deposition of metal borides
US10865475B2 (en)2016-04-212020-12-15Asm Ip Holding B.V.Deposition of metal borides and silicides
US11101370B2 (en)2016-05-022021-08-24Asm Ip Holding B.V.Method of forming a germanium oxynitride film
US10665452B2 (en)2016-05-022020-05-26Asm Ip Holdings B.V.Source/drain performance through conformal solid state doping
US11453943B2 (en)2016-05-252022-09-27Asm Ip Holding B.V.Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10388509B2 (en)2016-06-282019-08-20Asm Ip Holding B.V.Formation of epitaxial layers via dislocation filtering
US10612137B2 (en)2016-07-082020-04-07Asm Ip Holdings B.V.Organic reactants for atomic layer deposition
US11094582B2 (en)2016-07-082021-08-17Asm Ip Holding B.V.Selective deposition method to form air gaps
US11749562B2 (en)2016-07-082023-09-05Asm Ip Holding B.V.Selective deposition method to form air gaps
US11649546B2 (en)2016-07-082023-05-16Asm Ip Holding B.V.Organic reactants for atomic layer deposition
US10541173B2 (en)2016-07-082020-01-21Asm Ip Holding B.V.Selective deposition method to form air gaps
US10714385B2 (en)2016-07-192020-07-14Asm Ip Holding B.V.Selective deposition of tungsten
US11205585B2 (en)2016-07-282021-12-21Asm Ip Holding B.V.Substrate processing apparatus and method of operating the same
US10395919B2 (en)2016-07-282019-08-27Asm Ip Holding B.V.Method and apparatus for filling a gap
US11107676B2 (en)2016-07-282021-08-31Asm Ip Holding B.V.Method and apparatus for filling a gap
US11610775B2 (en)2016-07-282023-03-21Asm Ip Holding B.V.Method and apparatus for filling a gap
US11694892B2 (en)2016-07-282023-07-04Asm Ip Holding B.V.Method and apparatus for filling a gap
US10741385B2 (en)2016-07-282020-08-11Asm Ip Holding B.V.Method and apparatus for filling a gap
US10410943B2 (en)2016-10-132019-09-10Asm Ip Holding B.V.Method for passivating a surface of a semiconductor and related systems
US10943771B2 (en)2016-10-262021-03-09Asm Ip Holding B.V.Methods for thermally calibrating reaction chambers
US10643826B2 (en)2016-10-262020-05-05Asm Ip Holdings B.V.Methods for thermally calibrating reaction chambers
US11532757B2 (en)2016-10-272022-12-20Asm Ip Holding B.V.Deposition of charge trapping layers
US10714350B2 (en)2016-11-012020-07-14ASM IP Holdings, B.V.Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10435790B2 (en)2016-11-012019-10-08Asm Ip Holding B.V.Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10720331B2 (en)2016-11-012020-07-21ASM IP Holdings, B.V.Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US11810788B2 (en)2016-11-012023-11-07Asm Ip Holding B.V.Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10644025B2 (en)2016-11-072020-05-05Asm Ip Holding B.V.Method of processing a substrate and a device manufactured by using the method
US10622375B2 (en)2016-11-072020-04-14Asm Ip Holding B.V.Method of processing a substrate and a device manufactured by using the method
US10934619B2 (en)2016-11-152021-03-02Asm Ip Holding B.V.Gas supply unit and substrate processing apparatus including the gas supply unit
US11396702B2 (en)2016-11-152022-07-26Asm Ip Holding B.V.Gas supply unit and substrate processing apparatus including the gas supply unit
US10340135B2 (en)2016-11-282019-07-02Asm Ip Holding B.V.Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
US11222772B2 (en)2016-12-142022-01-11Asm Ip Holding B.V.Substrate processing apparatus
US11970766B2 (en)2016-12-152024-04-30Asm Ip Holding B.V.Sequential infiltration synthesis apparatus
US12000042B2 (en)2016-12-152024-06-04Asm Ip Holding B.V.Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11581186B2 (en)2016-12-152023-02-14Asm Ip Holding B.V.Sequential infiltration synthesis apparatus
US11447861B2 (en)2016-12-152022-09-20Asm Ip Holding B.V.Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11851755B2 (en)2016-12-152023-12-26Asm Ip Holding B.V.Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11001925B2 (en)2016-12-192021-05-11Asm Ip Holding B.V.Substrate processing apparatus
US11251035B2 (en)2016-12-222022-02-15Asm Ip Holding B.V.Method of forming a structure on a substrate
US10784102B2 (en)2016-12-222020-09-22Asm Ip Holding B.V.Method of forming a structure on a substrate
US10867788B2 (en)2016-12-282020-12-15Asm Ip Holding B.V.Method of forming a structure on a substrate
US12043899B2 (en)2017-01-102024-07-23Asm Ip Holding B.V.Reactor system and method to reduce residue buildup during a film deposition process
US11390950B2 (en)2017-01-102022-07-19Asm Ip Holding B.V.Reactor system and method to reduce residue buildup during a film deposition process
US10655221B2 (en)2017-02-092020-05-19Asm Ip Holding B.V.Method for depositing oxide film by thermal ALD and PEALD
US10468262B2 (en)2017-02-152019-11-05Asm Ip Holding B.V.Methods for forming a metallic film on a substrate by a cyclical deposition and related semiconductor device structures
US12106965B2 (en)2017-02-152024-10-01Asm Ip Holding B.V.Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US11410851B2 (en)2017-02-152022-08-09Asm Ip Holding B.V.Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10468261B2 (en)2017-02-152019-11-05Asm Ip Holding B.V.Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10529563B2 (en)2017-03-292020-01-07Asm Ip Holdings B.V.Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US11658030B2 (en)2017-03-292023-05-23Asm Ip Holding B.V.Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10950432B2 (en)2017-04-252021-03-16Asm Ip Holding B.V.Method of depositing thin film and method of manufacturing semiconductor device
US10714335B2 (en)2017-04-252020-07-14Asm Ip Holding B.V.Method of depositing thin film and method of manufacturing semiconductor device
US10892156B2 (en)2017-05-082021-01-12Asm Ip Holding B.V.Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US11848200B2 (en)2017-05-082023-12-19Asm Ip Holding B.V.Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10446393B2 (en)2017-05-082019-10-15Asm Ip Holding B.V.Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10770286B2 (en)2017-05-082020-09-08Asm Ip Holdings B.V.Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10504742B2 (en)2017-05-312019-12-10Asm Ip Holding B.V.Method of atomic layer etching using hydrogen plasma
US10886123B2 (en)2017-06-022021-01-05Asm Ip Holding B.V.Methods for forming low temperature semiconductor layers and related semiconductor device structures
US12040200B2 (en)2017-06-202024-07-16Asm Ip Holding B.V.Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11306395B2 (en)2017-06-282022-04-19Asm Ip Holding B.V.Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US11976361B2 (en)2017-06-282024-05-07Asm Ip Holding B.V.Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en)2017-07-052020-06-16Asm Ip Holdings B.V.Methods for forming a silicon germanium tin layer and related semiconductor device structures
US11164955B2 (en)2017-07-182021-11-02Asm Ip Holding B.V.Methods for forming a semiconductor device structure and related semiconductor device structures
US10734497B2 (en)2017-07-182020-08-04Asm Ip Holding B.V.Methods for forming a semiconductor device structure and related semiconductor device structures
US11695054B2 (en)2017-07-182023-07-04Asm Ip Holding B.V.Methods for forming a semiconductor device structure and related semiconductor device structures
US11018002B2 (en)2017-07-192021-05-25Asm Ip Holding B.V.Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10541333B2 (en)2017-07-192020-01-21Asm Ip Holding B.V.Method for depositing a group IV semiconductor and related semiconductor device structures
US11004977B2 (en)2017-07-192021-05-11Asm Ip Holding B.V.Method for depositing a group IV semiconductor and related semiconductor device structures
US12363960B2 (en)2017-07-192025-07-15Asm Ip Holding B.V.Method for depositing a Group IV semiconductor and related semiconductor device structures
US11374112B2 (en)2017-07-192022-06-28Asm Ip Holding B.V.Method for depositing a group IV semiconductor and related semiconductor device structures
US11802338B2 (en)2017-07-262023-10-31Asm Ip Holding B.V.Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10590535B2 (en)2017-07-262020-03-17Asm Ip Holdings B.V.Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10605530B2 (en)2017-07-262020-03-31Asm Ip Holding B.V.Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US12276023B2 (en)2017-08-042025-04-15Asm Ip Holding B.V.Showerhead assembly for distributing a gas within a reaction chamber
US11417545B2 (en)2017-08-082022-08-16Asm Ip Holding B.V.Radiation shield
US10692741B2 (en)2017-08-082020-06-23Asm Ip Holdings B.V.Radiation shield
US10770336B2 (en)2017-08-082020-09-08Asm Ip Holding B.V.Substrate lift mechanism and reactor including same
US11587821B2 (en)2017-08-082023-02-21Asm Ip Holding B.V.Substrate lift mechanism and reactor including same
US10672636B2 (en)2017-08-092020-06-02Asm Ip Holding B.V.Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US11139191B2 (en)2017-08-092021-10-05Asm Ip Holding B.V.Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11769682B2 (en)2017-08-092023-09-26Asm Ip Holding B.V.Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
USD900036S1 (en)2017-08-242020-10-27Asm Ip Holding B.V.Heater electrical connector and adapter
US11830730B2 (en)2017-08-292023-11-28Asm Ip Holding B.V.Layer forming method and apparatus
US11581220B2 (en)2017-08-302023-02-14Asm Ip Holding B.V.Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11069510B2 (en)2017-08-302021-07-20Asm Ip Holding B.V.Substrate processing apparatus
US11056344B2 (en)2017-08-302021-07-06Asm Ip Holding B.V.Layer forming method
US11295980B2 (en)2017-08-302022-04-05Asm Ip Holding B.V.Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11993843B2 (en)2017-08-312024-05-28Asm Ip Holding B.V.Substrate processing apparatus
US10607895B2 (en)2017-09-182020-03-31Asm Ip Holdings B.V.Method for forming a semiconductor device structure comprising a gate fill metal
US10928731B2 (en)2017-09-212021-02-23Asm Ip Holding B.V.Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same
US10844484B2 (en)2017-09-222020-11-24Asm Ip Holding B.V.Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en)2017-09-282020-05-19Asm Ip Holdings B.V.Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US11387120B2 (en)2017-09-282022-07-12Asm Ip Holding B.V.Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US12033861B2 (en)2017-10-052024-07-09Asm Ip Holding B.V.Method for selectively depositing a metallic film on a substrate
US11094546B2 (en)2017-10-052021-08-17Asm Ip Holding B.V.Method for selectively depositing a metallic film on a substrate
US10403504B2 (en)2017-10-052019-09-03Asm Ip Holding B.V.Method for selectively depositing a metallic film on a substrate
US10734223B2 (en)2017-10-102020-08-04Asm Ip Holding B.V.Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US12040184B2 (en)2017-10-302024-07-16Asm Ip Holding B.V.Methods for forming a semiconductor structure and related semiconductor structures
US10923344B2 (en)2017-10-302021-02-16Asm Ip Holding B.V.Methods for forming a semiconductor structure and related semiconductor structures
US10734244B2 (en)2017-11-162020-08-04Asm Ip Holding B.V.Method of processing a substrate and a device manufactured by the same
US10910262B2 (en)2017-11-162021-02-02Asm Ip Holding B.V.Method of selectively depositing a capping layer structure on a semiconductor device structure
US11022879B2 (en)2017-11-242021-06-01Asm Ip Holding B.V.Method of forming an enhanced unexposed photoresist layer
US11639811B2 (en)2017-11-272023-05-02Asm Ip Holding B.V.Apparatus including a clean mini environment
US11127617B2 (en)2017-11-272021-09-21Asm Ip Holding B.V.Storage device for storing wafer cassettes for use with a batch furnace
US11682572B2 (en)2017-11-272023-06-20Asm Ip Holdings B.V.Storage device for storing wafer cassettes for use with a batch furnace
US11501973B2 (en)2018-01-162022-11-15Asm Ip Holding B.V.Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
US10872771B2 (en)2018-01-162020-12-22Asm Ip Holding B. V.Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
US12119228B2 (en)2018-01-192024-10-15Asm Ip Holding B.V.Deposition method
US11482412B2 (en)2018-01-192022-10-25Asm Ip Holding B.V.Method for depositing a gap-fill layer by plasma-assisted deposition
US11972944B2 (en)2018-01-192024-04-30Asm Ip Holding B.V.Method for depositing a gap-fill layer by plasma-assisted deposition
US11393690B2 (en)2018-01-192022-07-19Asm Ip Holding B.V.Deposition method
USD903477S1 (en)2018-01-242020-12-01Asm Ip Holdings B.V.Metal clamp
US11018047B2 (en)2018-01-252021-05-25Asm Ip Holding B.V.Hybrid lift pin
USD880437S1 (en)2018-02-012020-04-07Asm Ip Holding B.V.Gas supply plate for semiconductor manufacturing apparatus
US10535516B2 (en)2018-02-012020-01-14Asm Ip Holdings B.V.Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
USD913980S1 (en)2018-02-012021-03-23Asm Ip Holding B.V.Gas supply plate for semiconductor manufacturing apparatus
US11081345B2 (en)2018-02-062021-08-03Asm Ip Holding B.V.Method of post-deposition treatment for silicon oxide film
US11735414B2 (en)2018-02-062023-08-22Asm Ip Holding B.V.Method of post-deposition treatment for silicon oxide film
US11387106B2 (en)2018-02-142022-07-12Asm Ip Holding B.V.Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US11685991B2 (en)2018-02-142023-06-27Asm Ip Holding B.V.Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10896820B2 (en)2018-02-142021-01-19Asm Ip Holding B.V.Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en)2018-02-152020-08-04Asm Ip Holding B.V.Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US12173402B2 (en)2018-02-152024-12-24Asm Ip Holding B.V.Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US11482418B2 (en)2018-02-202022-10-25Asm Ip Holding B.V.Substrate processing method and apparatus
US10658181B2 (en)2018-02-202020-05-19Asm Ip Holding B.V.Method of spacer-defined direct patterning in semiconductor fabrication
US10975470B2 (en)2018-02-232021-04-13Asm Ip Holding B.V.Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11939673B2 (en)2018-02-232024-03-26Asm Ip Holding B.V.Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en)2018-03-012022-10-18Asm Ip Holding B.V.Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en)2018-03-092023-04-18Asm Ip Holding B.V.Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en)2018-03-162021-09-07Asm Ip Holding B.V.Reactor, system including the reactor, and methods of manufacturing and using same
US11398382B2 (en)2018-03-272022-07-26Asm Ip Holding B.V.Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US10847371B2 (en)2018-03-272020-11-24Asm Ip Holding B.V.Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US12020938B2 (en)2018-03-272024-06-25Asm Ip Holding B.V.Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US10510536B2 (en)2018-03-292019-12-17Asm Ip Holding B.V.Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
US11230766B2 (en)2018-03-292022-01-25Asm Ip Holding B.V.Substrate processing apparatus and method
US11088002B2 (en)2018-03-292021-08-10Asm Ip Holding B.V.Substrate rack and a substrate processing system and method
US10867786B2 (en)2018-03-302020-12-15Asm Ip Holding B.V.Substrate processing method
US12230531B2 (en)2018-04-092025-02-18Asm Ip Holding B.V.Substrate supporting apparatus, substrate processing apparatus including the same, and substrate processing method
US11469098B2 (en)2018-05-082022-10-11Asm Ip Holding B.V.Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
US12025484B2 (en)2018-05-082024-07-02Asm Ip Holding B.V.Thin film forming method
US12272527B2 (en)2018-05-092025-04-08Asm Ip Holding B.V.Apparatus for use with hydrogen radicals and method of using same
US11056567B2 (en)2018-05-112021-07-06Asm Ip Holding B.V.Method of forming a doped metal carbide film on a substrate and related semiconductor device structures
US11908733B2 (en)2018-05-282024-02-20Asm Ip Holding B.V.Substrate processing method and device manufactured by using the same
US11361990B2 (en)2018-05-282022-06-14Asm Ip Holding B.V.Substrate processing method and device manufactured by using the same
US11270899B2 (en)2018-06-042022-03-08Asm Ip Holding B.V.Wafer handling chamber with moisture reduction
US11837483B2 (en)2018-06-042023-12-05Asm Ip Holding B.V.Wafer handling chamber with moisture reduction
US11718913B2 (en)2018-06-042023-08-08Asm Ip Holding B.V.Gas distribution system and reactor system including same
US11286562B2 (en)2018-06-082022-03-29Asm Ip Holding B.V.Gas-phase chemical reactor and method of using same
US10797133B2 (en)2018-06-212020-10-06Asm Ip Holding B.V.Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
US11530483B2 (en)2018-06-212022-12-20Asm Ip Holding B.V.Substrate processing system
US11296189B2 (en)2018-06-212022-04-05Asm Ip Holding B.V.Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
US11492703B2 (en)2018-06-272022-11-08Asm Ip Holding B.V.Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11499222B2 (en)2018-06-272022-11-15Asm Ip Holding B.V.Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11952658B2 (en)2018-06-272024-04-09Asm Ip Holding B.V.Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11814715B2 (en)2018-06-272023-11-14Asm Ip Holding B.V.Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US10612136B2 (en)2018-06-292020-04-07ASM IP Holding, B.V.Temperature-controlled flange and reactor system including same
US10914004B2 (en)2018-06-292021-02-09Asm Ip Holding B.V.Thin-film deposition method and manufacturing method of semiconductor device
US11168395B2 (en)2018-06-292021-11-09Asm Ip Holding B.V.Temperature-controlled flange and reactor system including same
US10388513B1 (en)2018-07-032019-08-20Asm Ip Holding B.V.Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11923190B2 (en)2018-07-032024-03-05Asm Ip Holding B.V.Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11646197B2 (en)2018-07-032023-05-09Asm Ip Holding B.V.Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755923B2 (en)2018-07-032020-08-25Asm Ip Holding B.V.Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en)2018-07-032020-08-25Asm Ip Holding B.V.Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en)2018-07-162020-09-08Asm Ip Holding B.V.Diaphragm valves, valve components, and methods for forming valve components
US10483099B1 (en)2018-07-262019-11-19Asm Ip Holding B.V.Method for forming thermally stable organosilicon polymer film
US11053591B2 (en)2018-08-062021-07-06Asm Ip Holding B.V.Multi-port gas injection system and reactor system including same
US10883175B2 (en)2018-08-092021-01-05Asm Ip Holding B.V.Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en)2018-08-162020-11-10Asm Ip Holding B.V.Gas distribution device for a wafer processing apparatus
US11430674B2 (en)2018-08-222022-08-30Asm Ip Holding B.V.Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11274369B2 (en)2018-09-112022-03-15Asm Ip Holding B.V.Thin film deposition method
US11804388B2 (en)2018-09-112023-10-31Asm Ip Holding B.V.Substrate processing apparatus and method
US11024523B2 (en)2018-09-112021-06-01Asm Ip Holding B.V.Substrate processing apparatus and method
US11049751B2 (en)2018-09-142021-06-29Asm Ip Holding B.V.Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
US11885023B2 (en)2018-10-012024-01-30Asm Ip Holding B.V.Substrate retaining apparatus, system including the apparatus, and method of using same
US11232963B2 (en)2018-10-032022-01-25Asm Ip Holding B.V.Substrate processing apparatus and method
US11414760B2 (en)2018-10-082022-08-16Asm Ip Holding B.V.Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same
US10847365B2 (en)2018-10-112020-11-24Asm Ip Holding B.V.Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en)2018-10-162020-10-20Asm Ip Holding B.V.Method for etching a carbon-containing feature
US11664199B2 (en)2018-10-192023-05-30Asm Ip Holding B.V.Substrate processing apparatus and substrate processing method
US11251068B2 (en)2018-10-192022-02-15Asm Ip Holding B.V.Substrate processing apparatus and substrate processing method
USD948463S1 (en)2018-10-242022-04-12Asm Ip Holding B.V.Susceptor for semiconductor substrate supporting apparatus
US10381219B1 (en)2018-10-252019-08-13Asm Ip Holding B.V.Methods for forming a silicon nitride film
US12378665B2 (en)2018-10-262025-08-05Asm Ip Holding B.V.High temperature coatings for a preclean and etch apparatus and related methods
US11087997B2 (en)2018-10-312021-08-10Asm Ip Holding B.V.Substrate processing apparatus for processing substrates
US11735445B2 (en)2018-10-312023-08-22Asm Ip Holding B.V.Substrate processing apparatus for processing substrates
US11866823B2 (en)2018-11-022024-01-09Asm Ip Holding B.V.Substrate supporting unit and a substrate processing device including the same
US11499226B2 (en)2018-11-022022-11-15Asm Ip Holding B.V.Substrate supporting unit and a substrate processing device including the same
US11572620B2 (en)2018-11-062023-02-07Asm Ip Holding B.V.Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en)2018-11-072021-06-08Asm Ip Holding B.V.Methods for depositing a boron doped silicon germanium film
US11244825B2 (en)2018-11-162022-02-08Asm Ip Holding B.V.Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US11798999B2 (en)2018-11-162023-10-24Asm Ip Holding B.V.Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10818758B2 (en)2018-11-162020-10-27Asm Ip Holding B.V.Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US11411088B2 (en)2018-11-162022-08-09Asm Ip Holding B.V.Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10847366B2 (en)2018-11-162020-11-24Asm Ip Holding B.V.Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10559458B1 (en)2018-11-262020-02-11Asm Ip Holding B.V.Method of forming oxynitride film
US12040199B2 (en)2018-11-282024-07-16Asm Ip Holding B.V.Substrate processing apparatus for processing substrates
US11217444B2 (en)2018-11-302022-01-04Asm Ip Holding B.V.Method for forming an ultraviolet radiation responsive metal oxide-containing film
US11488819B2 (en)2018-12-042022-11-01Asm Ip Holding B.V.Method of cleaning substrate processing apparatus
US11158513B2 (en)2018-12-132021-10-26Asm Ip Holding B.V.Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
US11769670B2 (en)2018-12-132023-09-26Asm Ip Holding B.V.Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
US11658029B2 (en)2018-12-142023-05-23Asm Ip Holding B.V.Method of forming a device structure using selective deposition of gallium nitride and system for same
US11390946B2 (en)2019-01-172022-07-19Asm Ip Holding B.V.Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
US11959171B2 (en)2019-01-172024-04-16Asm Ip Holding B.V.Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
US11171025B2 (en)2019-01-222021-11-09Asm Ip Holding B.V.Substrate processing device
US11127589B2 (en)2019-02-012021-09-21Asm Ip Holding B.V.Method of topology-selective film formation of silicon oxide
US11615980B2 (en)2019-02-202023-03-28Asm Ip Holding B.V.Method and apparatus for filling a recess formed within a substrate surface
US12176243B2 (en)2019-02-202024-12-24Asm Ip Holding B.V.Method and apparatus for filling a recess formed within a substrate surface
US11482533B2 (en)2019-02-202022-10-25Asm Ip Holding B.V.Apparatus and methods for plug fill deposition in 3-D NAND applications
US11251040B2 (en)2019-02-202022-02-15Asm Ip Holding B.V.Cyclical deposition method including treatment step and apparatus for same
US11227789B2 (en)2019-02-202022-01-18Asm Ip Holding B.V.Method and apparatus for filling a recess formed within a substrate surface
US11342216B2 (en)2019-02-202022-05-24Asm Ip Holding B.V.Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
US11798834B2 (en)2019-02-202023-10-24Asm Ip Holding B.V.Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
US11629407B2 (en)2019-02-222023-04-18Asm Ip Holding B.V.Substrate processing apparatus and method for processing substrates
US12410522B2 (en)2019-02-222025-09-09Asm Ip Holding B.V.Substrate processing apparatus and method for processing substrates
US11742198B2 (en)2019-03-082023-08-29Asm Ip Holding B.V.Structure including SiOCN layer and method of forming same
US11114294B2 (en)2019-03-082021-09-07Asm Ip Holding B.V.Structure including SiOC layer and method of forming same
US11424119B2 (en)2019-03-082022-08-23Asm Ip Holding B.V.Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
US11901175B2 (en)2019-03-082024-02-13Asm Ip Holding B.V.Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
US11378337B2 (en)2019-03-282022-07-05Asm Ip Holding B.V.Door opener and substrate processing apparatus provided therewith
US11551925B2 (en)2019-04-012023-01-10Asm Ip Holding B.V.Method for manufacturing a semiconductor device
US11447864B2 (en)2019-04-192022-09-20Asm Ip Holding B.V.Layer forming method and apparatus
US11814747B2 (en)2019-04-242023-11-14Asm Ip Holding B.V.Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly
US11289326B2 (en)2019-05-072022-03-29Asm Ip Holding B.V.Method for reforming amorphous carbon polymer film
US11781221B2 (en)2019-05-072023-10-10Asm Ip Holding B.V.Chemical source vessel with dip tube
US11355338B2 (en)2019-05-102022-06-07Asm Ip Holding B.V.Method of depositing material onto a surface and structure formed according to the method
US11996309B2 (en)2019-05-162024-05-28Asm Ip Holding B.V.Wafer boat handling device, vertical batch furnace and method
US11515188B2 (en)2019-05-162022-11-29Asm Ip Holding B.V.Wafer boat handling device, vertical batch furnace and method
USD975665S1 (en)2019-05-172023-01-17Asm Ip Holding B.V.Susceptor shaft
USD947913S1 (en)2019-05-172022-04-05Asm Ip Holding B.V.Susceptor shaft
USD935572S1 (en)2019-05-242021-11-09Asm Ip Holding B.V.Gas channel plate
USD922229S1 (en)2019-06-052021-06-15Asm Ip Holding B.V.Device for controlling a temperature of a gas supply unit
US12195855B2 (en)2019-06-062025-01-14Asm Ip Holding B.V.Gas-phase reactor system including a gas detector
US11345999B2 (en)2019-06-062022-05-31Asm Ip Holding B.V.Method of using a gas-phase reactor system including analyzing exhausted gas
US12252785B2 (en)2019-06-102025-03-18Asm Ip Holding B.V.Method for cleaning quartz epitaxial chambers
US11908684B2 (en)2019-06-112024-02-20Asm Ip Holding B.V.Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
US11476109B2 (en)2019-06-112022-10-18Asm Ip Holding B.V.Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
USD944946S1 (en)2019-06-142022-03-01Asm Ip Holding B.V.Shower plate
USD931978S1 (en)2019-06-272021-09-28Asm Ip Holding B.V.Showerhead vacuum transport
US11390945B2 (en)2019-07-032022-07-19Asm Ip Holding B.V.Temperature control assembly for substrate processing apparatus and method of using same
US11746414B2 (en)2019-07-032023-09-05Asm Ip Holding B.V.Temperature control assembly for substrate processing apparatus and method of using same
US11605528B2 (en)2019-07-092023-03-14Asm Ip Holding B.V.Plasma device using coaxial waveguide, and substrate treatment method
US11664267B2 (en)2019-07-102023-05-30Asm Ip Holding B.V.Substrate support assembly and substrate processing device including the same
US12107000B2 (en)2019-07-102024-10-01Asm Ip Holding B.V.Substrate support assembly and substrate processing device including the same
US11664245B2 (en)2019-07-162023-05-30Asm Ip Holding B.V.Substrate processing device
US11996304B2 (en)2019-07-162024-05-28Asm Ip Holding B.V.Substrate processing device
US11615970B2 (en)2019-07-172023-03-28Asm Ip Holding B.V.Radical assist ignition plasma system and method
US11688603B2 (en)2019-07-172023-06-27Asm Ip Holding B.V.Methods of forming silicon germanium structures
US11643724B2 (en)2019-07-182023-05-09Asm Ip Holding B.V.Method of forming structures using a neutral beam
US12129548B2 (en)2019-07-182024-10-29Asm Ip Holding B.V.Method of forming structures using a neutral beam
US12112940B2 (en)2019-07-192024-10-08Asm Ip Holding B.V.Method of forming topology-controlled amorphous carbon polymer film
US11282698B2 (en)2019-07-192022-03-22Asm Ip Holding B.V.Method of forming topology-controlled amorphous carbon polymer film
US11557474B2 (en)2019-07-292023-01-17Asm Ip Holding B.V.Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
US11443926B2 (en)2019-07-302022-09-13Asm Ip Holding B.V.Substrate processing apparatus
US11430640B2 (en)2019-07-302022-08-30Asm Ip Holding B.V.Substrate processing apparatus
US12169361B2 (en)2019-07-302024-12-17Asm Ip Holding B.V.Substrate processing apparatus and method
US11587815B2 (en)2019-07-312023-02-21Asm Ip Holding B.V.Vertical batch furnace assembly
US11587814B2 (en)2019-07-312023-02-21Asm Ip Holding B.V.Vertical batch furnace assembly
US11876008B2 (en)2019-07-312024-01-16Asm Ip Holding B.V.Vertical batch furnace assembly
US11227782B2 (en)2019-07-312022-01-18Asm Ip Holding B.V.Vertical batch furnace assembly
US11680839B2 (en)2019-08-052023-06-20Asm Ip Holding B.V.Liquid level sensor for a chemical source vessel
US12247286B2 (en)2019-08-092025-03-11Asm Ip Holding B.V.Heater assembly including cooling apparatus and method of using same
USD965044S1 (en)2019-08-192022-09-27Asm Ip Holding B.V.Susceptor shaft
USD965524S1 (en)2019-08-192022-10-04Asm Ip Holding B.V.Susceptor support
US11639548B2 (en)2019-08-212023-05-02Asm Ip Holding B.V.Film-forming material mixed-gas forming device and film forming device
USD979506S1 (en)2019-08-222023-02-28Asm Ip Holding B.V.Insulator
US11594450B2 (en)2019-08-222023-02-28Asm Ip Holding B.V.Method for forming a structure with a hole
USD930782S1 (en)2019-08-222021-09-14Asm Ip Holding B.V.Gas distributor
USD949319S1 (en)2019-08-222022-04-19Asm Ip Holding B.V.Exhaust duct
US12040229B2 (en)2019-08-222024-07-16Asm Ip Holding B.V.Method for forming a structure with a hole
USD940837S1 (en)2019-08-222022-01-11Asm Ip Holding B.V.Electrode
US11527400B2 (en)2019-08-232022-12-13Asm Ip Holding B.V.Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
US11286558B2 (en)2019-08-232022-03-29Asm Ip Holding B.V.Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US11898242B2 (en)2019-08-232024-02-13Asm Ip Holding B.V.Methods for forming a polycrystalline molybdenum film over a surface of a substrate and related structures including a polycrystalline molybdenum film
US12033849B2 (en)2019-08-232024-07-09Asm Ip Holding B.V.Method for depositing silicon oxide film having improved quality by PEALD using bis(diethylamino)silane
US11827978B2 (en)2019-08-232023-11-28Asm Ip Holding B.V.Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US11495459B2 (en)2019-09-042022-11-08Asm Ip Holding B.V.Methods for selective deposition using a sacrificial capping layer
US11823876B2 (en)2019-09-052023-11-21Asm Ip Holding B.V.Substrate processing apparatus
US11562901B2 (en)2019-09-252023-01-24Asm Ip Holding B.V.Substrate processing method
US11610774B2 (en)2019-10-022023-03-21Asm Ip Holding B.V.Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process
US12230497B2 (en)2019-10-022025-02-18Asm Ip Holding B.V.Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process
US11339476B2 (en)2019-10-082022-05-24Asm Ip Holding B.V.Substrate processing device having connection plates, substrate processing method
US12006572B2 (en)2019-10-082024-06-11Asm Ip Holding B.V.Reactor system including a gas distribution assembly for use with activated species and method of using same
US12428726B2 (en)2019-10-082025-09-30Asm Ip Holding B.V.Gas injection system and reactor system including same
US11735422B2 (en)2019-10-102023-08-22Asm Ip Holding B.V.Method of forming a photoresist underlayer and structure including same
US12009241B2 (en)2019-10-142024-06-11Asm Ip Holding B.V.Vertical batch furnace assembly with detector to detect cassette
US11637011B2 (en)2019-10-162023-04-25Asm Ip Holding B.V.Method of topology-selective film formation of silicon oxide
US11637014B2 (en)2019-10-172023-04-25Asm Ip Holding B.V.Methods for selective deposition of doped semiconductor material
US11315794B2 (en)2019-10-212022-04-26Asm Ip Holding B.V.Apparatus and methods for selectively etching films
US11996292B2 (en)2019-10-252024-05-28Asm Ip Holding B.V.Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11646205B2 (en)2019-10-292023-05-09Asm Ip Holding B.V.Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
US11594600B2 (en)2019-11-052023-02-28Asm Ip Holding B.V.Structures with doped semiconductor layers and methods and systems for forming same
US12266695B2 (en)2019-11-052025-04-01Asm Ip Holding B.V.Structures with doped semiconductor layers and methods and systems for forming same
US11501968B2 (en)2019-11-152022-11-15Asm Ip Holding B.V.Method for providing a semiconductor device with silicon filled gaps
US11626316B2 (en)2019-11-202023-04-11Asm Ip Holding B.V.Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
US11401605B2 (en)2019-11-262022-08-02Asm Ip Holding B.V.Substrate processing apparatus
US11915929B2 (en)2019-11-262024-02-27Asm Ip Holding B.V.Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
US11923181B2 (en)2019-11-292024-03-05Asm Ip Holding B.V.Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing
US11646184B2 (en)2019-11-292023-05-09Asm Ip Holding B.V.Substrate processing apparatus
US11929251B2 (en)2019-12-022024-03-12Asm Ip Holding B.V.Substrate processing apparatus having electrostatic chuck and substrate processing method
US11840761B2 (en)2019-12-042023-12-12Asm Ip Holding B.V.Substrate processing apparatus
US11885013B2 (en)2019-12-172024-01-30Asm Ip Holding B.V.Method of forming vanadium nitride layer and structure including the vanadium nitride layer
US11527403B2 (en)2019-12-192022-12-13Asm Ip Holding B.V.Methods for filling a gap feature on a substrate surface and related semiconductor structures
US12119220B2 (en)2019-12-192024-10-15Asm Ip Holding B.V.Methods for filling a gap feature on a substrate surface and related semiconductor structures
US12033885B2 (en)2020-01-062024-07-09Asm Ip Holding B.V.Channeled lift pin
US11976359B2 (en)2020-01-062024-05-07Asm Ip Holding B.V.Gas supply assembly, components thereof, and reactor system including same
US11993847B2 (en)2020-01-082024-05-28Asm Ip Holding B.V.Injector
US12125700B2 (en)2020-01-162024-10-22Asm Ip Holding B.V.Method of forming high aspect ratio features
US11551912B2 (en)2020-01-202023-01-10Asm Ip Holding B.V.Method of forming thin film and method of modifying surface of thin film
US12410515B2 (en)2020-01-292025-09-09Asm Ip Holding B.V.Contaminant trap system for a reactor system
US11521851B2 (en)2020-02-032022-12-06Asm Ip Holding B.V.Method of forming structures including a vanadium or indium layer
US11828707B2 (en)2020-02-042023-11-28Asm Ip Holding B.V.Method and apparatus for transmittance measurements of large articles
US11776846B2 (en)2020-02-072023-10-03Asm Ip Holding B.V.Methods for depositing gap filling fluids and related systems and devices
US12431334B2 (en)2020-02-132025-09-30Asm Ip Holding B.V.Gas distribution assembly
US12218269B2 (en)2020-02-132025-02-04Asm Ip Holding B.V.Substrate processing apparatus including light receiving device and calibration method of light receiving device
US11781243B2 (en)2020-02-172023-10-10Asm Ip Holding B.V.Method for depositing low temperature phosphorous-doped silicon
US11986868B2 (en)2020-02-282024-05-21Asm Ip Holding B.V.System dedicated for parts cleaning
US12278129B2 (en)2020-03-042025-04-15Asm Ip Holding B.V.Alignment fixture for a reactor system
US11876356B2 (en)2020-03-112024-01-16Asm Ip Holding B.V.Lockout tagout assembly and system and method of using same
US11837494B2 (en)2020-03-112023-12-05Asm Ip Holding B.V.Substrate handling device with adjustable joints
US11488854B2 (en)2020-03-112022-11-01Asm Ip Holding B.V.Substrate handling device with adjustable joints
US11961741B2 (en)2020-03-122024-04-16Asm Ip Holding B.V.Method for fabricating layer structure having target topological profile
US12173404B2 (en)2020-03-172024-12-24Asm Ip Holding B.V.Method of depositing epitaxial material, structure formed using the method, and system for performing the method
US11823866B2 (en)2020-04-022023-11-21Asm Ip Holding B.V.Thin film forming method
US11830738B2 (en)2020-04-032023-11-28Asm Ip Holding B.V.Method for forming barrier layer and method for manufacturing semiconductor device
US11437241B2 (en)2020-04-082022-09-06Asm Ip Holding B.V.Apparatus and methods for selectively etching silicon oxide films
US12087586B2 (en)2020-04-152024-09-10Asm Ip Holding B.V.Method of forming chromium nitride layer and structure including the chromium nitride layer
US11821078B2 (en)2020-04-152023-11-21Asm Ip Holding B.V.Method for forming precoat film and method for forming silicon-containing film
US11996289B2 (en)2020-04-162024-05-28Asm Ip Holding B.V.Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
US12243742B2 (en)2020-04-212025-03-04Asm Ip Holding B.V.Method for processing a substrate
US12130084B2 (en)2020-04-242024-10-29Asm Ip Holding B.V.Vertical batch furnace assembly comprising a cooling gas supply
US12243747B2 (en)2020-04-242025-03-04Asm Ip Holding B.V.Methods of forming structures including vanadium boride and vanadium phosphide layers
US11887857B2 (en)2020-04-242024-01-30Asm Ip Holding B.V.Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
US12221357B2 (en)2020-04-242025-02-11Asm Ip Holding B.V.Methods and apparatus for stabilizing vanadium compounds
US11898243B2 (en)2020-04-242024-02-13Asm Ip Holding B.V.Method of forming vanadium nitride-containing layer
US11530876B2 (en)2020-04-242022-12-20Asm Ip Holding B.V.Vertical batch furnace assembly comprising a cooling gas supply
US11959168B2 (en)2020-04-292024-04-16Asm Ip Holding B.V.Solid source precursor vessel
US11798830B2 (en)2020-05-012023-10-24Asm Ip Holding B.V.Fast FOUP swapping with a FOUP handler
US11515187B2 (en)2020-05-012022-11-29Asm Ip Holding B.V.Fast FOUP swapping with a FOUP handler
US11626308B2 (en)2020-05-132023-04-11Asm Ip Holding B.V.Laser alignment fixture for a reactor system
US12057314B2 (en)2020-05-152024-08-06Asm Ip Holding B.V.Methods for silicon germanium uniformity control using multiple precursors
US11804364B2 (en)2020-05-192023-10-31Asm Ip Holding B.V.Substrate processing apparatus
US12243757B2 (en)2020-05-212025-03-04Asm Ip Holding B.V.Flange and apparatus for processing substrates
US11705333B2 (en)2020-05-212023-07-18Asm Ip Holding B.V.Structures including multiple carbon layers and methods of forming and using same
US11987881B2 (en)2020-05-222024-05-21Asm Ip Holding B.V.Apparatus for depositing thin films using hydrogen peroxide
US12406846B2 (en)2020-05-262025-09-02Asm Ip Holding B.V.Method for depositing boron and gallium containing silicon germanium layers
US11767589B2 (en)2020-05-292023-09-26Asm Ip Holding B.V.Substrate processing device
US12106944B2 (en)2020-06-022024-10-01Asm Ip Holding B.V.Rotating substrate support
US12266524B2 (en)2020-06-162025-04-01Asm Ip Holding B.V.Method for depositing boron containing silicon germanium layers
US11646204B2 (en)2020-06-242023-05-09Asm Ip Holding B.V.Method for forming a layer provided with silicon
US11658035B2 (en)2020-06-302023-05-23Asm Ip Holding B.V.Substrate processing method
US12431354B2 (en)2020-07-012025-09-30Asm Ip Holding B.V.Silicon nitride and silicon oxide deposition methods using fluorine inhibitor
US12020934B2 (en)2020-07-082024-06-25Asm Ip Holding B.V.Substrate processing method
US11644758B2 (en)2020-07-172023-05-09Asm Ip Holding B.V.Structures and methods for use in photolithography
US12055863B2 (en)2020-07-172024-08-06Asm Ip Holding B.V.Structures and methods for use in photolithography
US11674220B2 (en)2020-07-202023-06-13Asm Ip Holding B.V.Method for depositing molybdenum layers using an underlayer
US12241158B2 (en)2020-07-202025-03-04Asm Ip Holding B.V.Method for forming structures including transition metal layers
US12322591B2 (en)2020-07-272025-06-03Asm Ip Holding B.V.Thin film deposition process
US12154824B2 (en)2020-08-142024-11-26Asm Ip Holding B.V.Substrate processing method
US12040177B2 (en)2020-08-182024-07-16Asm Ip Holding B.V.Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
US12217954B2 (en)2020-08-252025-02-04Asm Ip Holding B.V.Method of cleaning a surface
US11725280B2 (en)2020-08-262023-08-15Asm Ip Holding B.V.Method for forming metal silicon oxide and metal silicon oxynitride layers
US12074022B2 (en)2020-08-272024-08-27Asm Ip Holding B.V.Method and system for forming patterned structures using multiple patterning process
US12211742B2 (en)2020-09-102025-01-28Asm Ip Holding B.V.Methods for depositing gap filling fluid
USD990534S1 (en)2020-09-112023-06-27Asm Ip Holding B.V.Weighted lift pin
US12148609B2 (en)2020-09-162024-11-19Asm Ip Holding B.V.Silicon oxide deposition method
USD1012873S1 (en)2020-09-242024-01-30Asm Ip Holding B.V.Electrode for semiconductor processing apparatus
US12218000B2 (en)2020-09-252025-02-04Asm Ip Holding B.V.Semiconductor processing method
US12009224B2 (en)2020-09-292024-06-11Asm Ip Holding B.V.Apparatus and method for etching metal nitrides
US12107005B2 (en)2020-10-062024-10-01Asm Ip Holding B.V.Deposition method and an apparatus for depositing a silicon-containing material
US12051567B2 (en)2020-10-072024-07-30Asm Ip Holding B.V.Gas supply unit and substrate processing apparatus including gas supply unit
US11827981B2 (en)2020-10-142023-11-28Asm Ip Holding B.V.Method of depositing material on stepped structure
US12217946B2 (en)2020-10-152025-02-04Asm Ip Holding B.V.Method of manufacturing semiconductor device, and substrate treatment apparatus using ether-CAT
US11873557B2 (en)2020-10-222024-01-16Asm Ip Holding B.V.Method of depositing vanadium metal
US11901179B2 (en)2020-10-282024-02-13Asm Ip Holding B.V.Method and device for depositing silicon onto substrates
US12209308B2 (en)2020-11-122025-01-28Asm Ip Holding B.V.Reactor and related methods
US12195852B2 (en)2020-11-232025-01-14Asm Ip Holding B.V.Substrate processing apparatus with an injector
US12027365B2 (en)2020-11-242024-07-02Asm Ip Holding B.V.Methods for filling a gap and related systems and devices
US11891696B2 (en)2020-11-302024-02-06Asm Ip Holding B.V.Injector configured for arrangement within a reaction chamber of a substrate processing apparatus
US12255053B2 (en)2020-12-102025-03-18Asm Ip Holding B.V.Methods and systems for depositing a layer
US12159788B2 (en)2020-12-142024-12-03Asm Ip Holding B.V.Method of forming structures for threshold voltage control
US11946137B2 (en)2020-12-162024-04-02Asm Ip Holding B.V.Runout and wobble measurement fixtures
US12288710B2 (en)2020-12-182025-04-29Asm Ip Holding B.V.Wafer processing apparatus with a rotatable table
US12129545B2 (en)2020-12-222024-10-29Asm Ip Holding B.V.Precursor capsule, a vessel and a method
US12131885B2 (en)2020-12-222024-10-29Asm Ip Holding B.V.Plasma treatment device having matching box
US11885020B2 (en)2020-12-222024-01-30Asm Ip Holding B.V.Transition metal deposition method
US12442082B2 (en)2021-05-042025-10-14Asm Ip Holding B.V.Reactor system comprising a tuning circuit
USD980814S1 (en)2021-05-112023-03-14Asm Ip Holding B.V.Gas distributor for substrate processing apparatus
USD981973S1 (en)2021-05-112023-03-28Asm Ip Holding B.V.Reactor wall for substrate processing apparatus
USD980813S1 (en)2021-05-112023-03-14Asm Ip Holding B.V.Gas flow control plate for substrate processing apparatus
USD990441S1 (en)2021-09-072023-06-27Asm Ip Holding B.V.Gas flow control plate
USD1060598S1 (en)2021-12-032025-02-04Asm Ip Holding B.V.Split showerhead cover
US12444599B2 (en)2021-12-082025-10-14Asm Ip Holding B.V.Method for forming an ultraviolet radiation responsive metal oxide-containing film

Similar Documents

PublicationPublication DateTitle
JP2001207265A (en) Film forming equipment
JP2001207268A (en) Film forming equipment
US6086962A (en)Method for deposition of diamond-like carbon and silicon-doped diamond-like carbon coatings from a hall-current ion source
US7967913B2 (en)Remote plasma clean process with cycled high and low pressure clean steps
JP4823628B2 (en) Substrate processing method and recording medium
US20180182614A1 (en)Method of depositing and etching si-containing film
EP0732732A2 (en)Method of removing native silicon oxide by sputtering
JP6255335B2 (en) Semiconductor device manufacturing method, substrate processing method, substrate processing apparatus, and program
US20240395542A1 (en)High etch selectivity, low stress ashable carbon hard mask
JP2005089823A (en) Film forming apparatus and film forming method
JPH10500391A (en) Large, low pressure plasma ion deposition of diamond-like carbon films
JP3913723B2 (en) Substrate processing apparatus and semiconductor device manufacturing method
JP2603909B2 (en) CVD apparatus, multi-chamber type CVD apparatus and substrate processing method thereof
JP2006245089A (en) Thin film formation method
KR102382779B1 (en)Thin film depostion apparatus and DLC thin film coating methos using the appartus
JP2022049557A (en)Plasma purge method
CN100433273C (en)plasma generating method, cleaning method and substrate processing method
TWI875846B (en)Rf power source operation in plasma enhanced processes
JP2003113470A (en) Diamond-like carbon film laminate and method for producing the same
US11538678B2 (en)Deposition method
TW202527605A (en)Pulse-type remote plasma generation device, apparatus and surface treatment process comprising a remote plasma chamber, and gas pipelines to enable pulsed regulation while avoiding damage to the substrate, making it suitable for selective processing of substrates
JP2001254179A (en) Film forming equipment
JP2001207263A (en) Film forming equipment
JPH09275100A (en) Thin film deposition apparatus and deposition method
JP2005310819A (en) Semiconductor manufacturing equipment

Legal Events

DateCodeTitleDescription
A300Withdrawal of application because of no request for examination

Free format text:JAPANESE INTERMEDIATE CODE: A300

Effective date:20070403
[8]ページ先頭
©2009-2025 Movatter.jp