【０００１】[0001]
【発明の属する技術分野】本発明は、電子と正孔の注入
および再結合により発光する有機化合物材料のエレクト
ロルミネッセンス（以下、ＥＬと略称する）デバイスに
タッチ式のスイッチの機能を付加した透明タッチスイッ
チ付き有機ＥＬデバイスとその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electroluminescent (hereinafter abbreviated as "EL") device made of an organic compound material which emits light by injection and recombination of electrons and holes. The present invention relates to an organic EL device with a switch and a method of manufacturing the same.
【０００２】[0002]
【従来の技術】有機ＥＬ素子は、少なくとも一方が透明
電極からなる一対の電極の間に蛍光性有機化合物を含む
薄膜を挟んだ構造を有し、この薄膜に電子と正孔を注入
して再結合させることにより励起子（エキシトン）を生
成させ、この励起子が失活する際の光の放出（蛍光・燐
光）を利用して表示を行う素子である。2. Description of the Related Art An organic EL device has a structure in which a thin film containing a fluorescent organic compound is sandwiched between a pair of electrodes at least one of which is a transparent electrode. An element in which exciton (exciton) is generated by coupling, and display is performed using light emission (fluorescence / phosphorescence) when the exciton is deactivated.
【０００３】ところで、この種の有機ＥＬ素子にタッチ
式のスイッチを設けた有機ＥＬデバイスとしては、図６
に示すような構造のものが知られている（特開平１０−
９１３４２号公報）。[0003] By the way, as an organic EL device in which a touch-type switch is provided for this kind of organic EL element, FIG.
The structure shown in FIG.
No. 91342).
【０００４】この有機ＥＬデバイス３１は、第１の透明
基板３２と、第１の透明基板３２の上に形成された陰極
３３と、陰極３３の上に形成された有機材料からなる発
光体３４と、発光体３４の上に形成された透明性を有す
る陽極３５と、第１の透明基板３２に対向配置された第
２の透明基板３６と、少なくとも発光体３４を封止する
ように第１の透明基板３２と第２の透明基板３６とを固
着する第１のシール材３７とからなる有機ＥＬディスプ
レイ３１ａを表示部とし、第２の透明基板３６の上に形
成された第１の透明電極３８と、第１の透明電極３８と
対向配置され、表面に第２の透明電極３９が形成されて
なる第３の透明基板４０と、第２の透明基板３６と第３
の透明基板４０との間に空隙を設けつつ、これらを固着
する第２のシール材４１とからなるタッチスイッチ３１
ｂを入力部として備えたものである。The organic EL device 31 includes a first transparent substrate 32, a cathode 33 formed on the first transparent substrate 32, and a luminous body 34 formed on the cathode 33 and made of an organic material. A transparent anode 35 formed on the luminous body 34, a second transparent substrate 36 disposed facing the first transparent substrate 32, and a first transparent substrate 36 sealing at least the luminous body 34. An organic EL display 31a including a transparent substrate 32 and a first sealing material 37 for fixing the second transparent substrate 36 is used as a display unit, and a first transparent electrode 38 formed on the second transparent substrate 36 is used. A third transparent substrate 40 having a second transparent electrode 39 formed on the surface thereof and a second transparent substrate 36,
A touch switch 31 comprising a second sealing material 41 for fixing the gaps while providing a gap between the touch switch 31 and the transparent substrate 40.
b as an input unit.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、上述し
た従来の有機ＥＬデバイス３１は、表示部をなす有機Ｅ
Ｌディスプレイ３１ａと、入力部をなすタッチスイッチ
３１ｂとが第２の透明基板３６を境にして別々に構成さ
れるので、部品点数が増して構造が複雑になるという欠
点があった。However, the above-described conventional organic EL device 31 has an organic EL device which forms a display section.
Since the L display 31a and the touch switch 31b serving as an input unit are separately configured with the second transparent substrate 36 as a boundary, there is a disadvantage that the number of components increases and the structure becomes complicated.
【０００６】しかも、厚さ方向に３枚の透明基板３２，
３６，４０による基材が重ね合わされた構成なので、デ
バイス全体の厚さが増すだけでなく、基材の重ね合わせ
により干渉光が発生し、タッチスイッチ３１ｂの下部に
位置する有機ＥＬディスプレイ３１ａの表示の輝度が低
下するという問題があった。In addition, three transparent substrates 32,
Since the base materials 36 and 40 are superimposed, not only the thickness of the entire device is increased, but also the superposition of the base materials generates interference light, and the display on the organic EL display 31a located below the touch switch 31b. There is a problem that the brightness of the image is reduced.
【０００７】そこで、本発明は、上記問題点に鑑みてな
されたものであり、従来に比べ簡単な構造で安価に製造
でき、干渉光による輝度の低下も低減することができる
透明タッチスイッチ付き有機ＥＬデバイスとその製造方
法を提供することを目的としている。Accordingly, the present invention has been made in view of the above-mentioned problems, and has an organic structure with a transparent touch switch that can be manufactured at a low cost with a simple structure as compared with the related art, and that can reduce a decrease in luminance due to interference light. An object is to provide an EL device and a manufacturing method thereof.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するた
め、請求項１の発明は、絶縁性を有する基板と、該基板
の上に形成された第一電極と、該第一電極の上に形成さ
れた少なくとも発光層を含む有機層と、該有機層の上に
形成された透明性を有する第二電極と、前記基板と所定
ギャップをおいて封止される透明性を有する基材と、前
記第二電極と電気的にマトリクスを形成するように前記
基材の上に形成された第三電極と、前記基板と前記基材
との間が所定ギャップで挟持されるように前記基材の上
に形成された弾性を有するスペーサーとを備え、前記第
二電極と前記第三電極により透明タッチスイッチが構成
されることを特徴とする。In order to achieve the above object, the invention according to claim 1 comprises a substrate having an insulating property, a first electrode formed on the substrate, and a first electrode formed on the first electrode. An organic layer including at least the light-emitting layer formed, a second electrode having transparency formed on the organic layer, and a substrate having transparency sealed at a predetermined gap with the substrate, A third electrode formed on the base material so as to electrically form a matrix with the second electrode, and the base material such that the substrate and the base material are sandwiched by a predetermined gap. And a spacer having elasticity formed thereon, wherein the second electrode and the third electrode constitute a transparent touch switch.
【０００９】請求項２の発明は、請求項１の透明タッチ
スイッチ付き有機ＥＬデバイスにおいて、前記基材本体
の表面には防湿のためのコート膜が形成されていること
を特徴とする。According to a second aspect of the present invention, in the organic EL device with the transparent touch switch according to the first aspect, a coat film for moisture proof is formed on a surface of the base body.
【００１０】請求項３の発明は、請求項１の透明タッチ
スイッチ付き有機ＥＬデバイスにおいて、前記第一電極
と前記第二電極とで挟まれた前記有機層の部分が発光部
をなし、該発光部の発光領域を区画するように前記第一
電極と前記有機層の界面に有機絶縁層が形成されている
ことを特徴とする。According to a third aspect of the present invention, in the organic EL device with the transparent touch switch according to the first aspect, a portion of the organic layer sandwiched between the first electrode and the second electrode forms a light emitting portion, and An organic insulating layer is formed at an interface between the first electrode and the organic layer so as to define a light emitting region of the portion.
【００１１】請求項４の発明は、絶縁性を有する基板の
上に第一電極を形成する工程と、前記第一電極の上に有
機層を形成する工程と、前記有機層の上に透明性を有す
る第二電極を形成する工程と、前記第二電極と電気的に
マトリクスを形成するように透明性を有する基材の上に
第三電極を形成する工程と、前記基材の上に弾性を有す
るスペーサーを形成する工程と、前記第二電極と前記第
三電極により透明タッチスイッチが構成され、前記基板
と前記基材との間が前記スペーサーにより所定ギャップ
で挟持されるように前記基板と前記基材との間を封止す
る工程とを含むことを特徴とする。[0011] The invention according to claim 4 is a step of forming a first electrode on an insulating substrate, a step of forming an organic layer on the first electrode, and a step of forming a transparent layer on the organic layer. Forming a second electrode having, and forming a third electrode on a transparent substrate so as to electrically form a matrix with the second electrode, and elastic on the substrate Forming a spacer having, a transparent touch switch is configured by the second electrode and the third electrode, the substrate and the substrate so that the substrate and the substrate are sandwiched by a predetermined gap by the spacer. Sealing the space between the base material and the base material.
【００１２】請求項５の発明は、請求項４の透明タッチ
スイッチ付き有機ＥＬデバイスの製造方法において、前
記第一電極を形成した後、前記第一電極と前記第二電極
とで挟まれた前記有機層の部分の発光部の発光領域を区
画するように前記第一電極と前記有機層の界面に有機絶
縁層を形成する工程を含むことを特徴とする。According to a fifth aspect of the present invention, in the method of manufacturing an organic EL device with a transparent touch switch according to the fourth aspect, after forming the first electrode, the first electrode is sandwiched between the first electrode and the second electrode. The method includes a step of forming an organic insulating layer at an interface between the first electrode and the organic layer so as to partition a light emitting region of a light emitting portion in an organic layer portion.
【００１３】[0013]
【発明の実施の形態】図１は本発明による透明タッチス
イッチ付き有機ＥＬデバイスの実施の形態を示す分解斜
視図、図２（ａ）〜（ｈ）は図１の有機ＥＬデバイスの
製造工程を示す断面図、図３（ａ），（ｂ）は図１の有
機ＥＬデバイスにおけるタッチスイッチの動作図、図４
は図１のタッチスイッチ部分の電極構造の概略図、図５
は図４のタッチスイッチの機能図である。なお、図３で
は絶縁層を省略している。FIG. 1 is an exploded perspective view showing an embodiment of an organic EL device with a transparent touch switch according to the present invention, and FIGS. 2 (a) to 2 (h) show manufacturing steps of the organic EL device of FIG. 3 (a) and 3 (b) are operation diagrams of a touch switch in the organic EL device of FIG. 1, and FIG.
FIG. 5 is a schematic view of an electrode structure of a touch switch portion of FIG.
5 is a functional diagram of the touch switch of FIG. In FIG. 3, the insulating layer is omitted.
【００１４】本例の有機ＥＬデバイスは、一対の電極の
間に蛍光性有機化合物を含む薄膜を挟んで基板に積層形
成してＥＬ表示部を構成し、このＥＬ表示部の一方の電
極を透明タッチスイッチの一方のスイッチ用電極として
兼用し、透明タッチスイッチの他方のスイッチ用電極を
封止用の基材の内面に形成して基板と基材とを積層貼り
合わせることにより、従来に比べて簡単な構造で安価な
有機ＥＬデバイスの製造を実現している。In the organic EL device of this embodiment, an EL display section is formed by laminating a thin film containing a fluorescent organic compound between a pair of electrodes to form an EL display section, and one electrode of the EL display section is transparent. Compared to the conventional one, the switch switch electrode of the transparent touch switch is also used as one switch electrode of the touch switch, and the other switch electrode of the transparent touch switch is formed on the inner surface of the sealing base material and the substrate and the base material are laminated and bonded. The production of an inexpensive organic EL device with a simple structure is realized.
【００１５】以下、本例の有機ＥＬデバイスの具体的な
構成を図１〜図５を参照しながら製作工程の手順に沿っ
て説明する。Hereinafter, a specific configuration of the organic EL device according to the present embodiment will be described along a procedure of a manufacturing process with reference to FIGS.
【００１６】図１〜図３に示すように、有機ＥＬデバイ
ス１は、ガラス等の絶縁性を有する基板２を基部として
いる。なお、基板２は、光学的に透明でも不透明でもか
まわない。まず、図２（ａ），（ｂ）に示すように、基
板２の上に第一電極となる陰極３（陰極配線を含む）を
抵抗加熱蒸着法、分子線蒸着法、スパッタ法等のＰＶＤ
（Physical Vapor Deposition ）法により形成した後、
フォトリソ法を用いて所定パターン形状に形成する。本
例における陰極３は、図１に示すように、基板２の左右
に平行に並んで形成された複数本のストライプ状のパタ
ーンからなり、一端が基板２の端部まで引き出されて不
図示の駆動回路に接続される。As shown in FIGS. 1 to 3, the organic EL device 1 is based on an insulating substrate 2 such as glass. Note that the substrate 2 may be optically transparent or opaque. First, as shown in FIGS. 2A and 2B, a cathode 3 (including a cathode wiring) serving as a first electrode is formed on a substrate 2 by PVD such as resistance heating evaporation, molecular beam evaporation, or sputtering.
(Physical Vapor Deposition) method,
It is formed in a predetermined pattern shape using a photolithography method. As shown in FIG. 1, the cathode 3 in this example is composed of a plurality of stripe-shaped patterns formed in parallel on the left and right sides of the substrate 2, one end of which is pulled out to the end of the substrate 2 and not shown. Connected to drive circuit.
【００１７】陰極３の材料としては、後述する第二電極
としての陽極６の材料よりも抵抗率の低い材料（仕事関
数の小さい材料）が用いられる。具体的には、Ａｌ、Ｌ
ｉ、Ｎａ、Ｍｇ、Ｃａ等の金属単体、及びその化合物、
或いはＭｇ−Ａｇ、Ａｌ−Ｌｉ、Ｍｇ−Ｉｎ等の各種合
金を用いることができる。As a material of the cathode 3, a material having a lower resistivity (a material having a small work function) than a material of the anode 6 as a second electrode described later is used. Specifically, Al, L
i, a simple metal such as Na, Mg, Ca and the like, and a compound thereof;
Alternatively, various alloys such as Mg-Ag, Al-Li, and Mg-In can be used.
【００１８】次に、図２（ｃ）に示すように、陰極３の
上に有機材料からなる絶縁層４を成膜する。絶縁層４
は、発光部以外を覆うように陰極３と後述する有機層５
の界面に形成する。絶縁層４は、例えばネガ型感光性ポ
リイミドの他、薄膜で蒸着可能な絶縁物材料であるＳｉ
Ｎ、ＳｉＯ2等で形成することができる。Next, as shown in FIG. 2C, an insulating layer 4 made of an organic material is formed on the cathode 3. Insulating layer 4
Is a cathode 3 and an organic layer 5 described later so as to cover portions other than the light emitting portion.
Formed at the interface. The insulating layer 4 is made of, for example, a negative photosensitive polyimide or a thin-film insulating material Si
It can be formed of N, SiO2 or the like.
【００１９】本例では、ネガ型感光性ポリイミドを用い
て絶縁層４を形成している。さらに説明すると、陰極３
の上にスピンコート法やロールコート法により所定の塗
膜厚となるようにネガ型感光性ポリイミド膜を成膜し、
陰極３上の発光部以外を覆うように製作された露光マス
クを用いて露光処理を行う。そして、現像完了後、例え
ば窒素雰囲気中で３５０℃の温度でベーク処理し、所定
のイミド化処理を行う。これにより、発光部７のパター
ン（発光領域）形状に区画されて陰極３が露出した絶縁
層４が形成され、発光部７のパターン精度が向上し、再
現性を確保することができる。In this embodiment, the insulating layer 4 is formed using negative photosensitive polyimide. More specifically, the cathode 3
A negative photosensitive polyimide film is formed on the substrate so as to have a predetermined coating thickness by a spin coating method or a roll coating method,
An exposure process is performed using an exposure mask manufactured so as to cover a portion other than the light emitting portion on the cathode 3. After completion of the development, a baking treatment is performed at a temperature of 350 ° C. in a nitrogen atmosphere, for example, to perform a predetermined imidization treatment. As a result, the insulating layer 4 in which the cathode 3 is exposed is formed in a pattern (light emitting region) shape of the light emitting unit 7, and the pattern accuracy of the light emitting unit 7 is improved, and reproducibility can be secured.
【００２０】次に、上記のようにして絶縁層４が形成さ
れた基板２を通常の基板洗浄処理した後、絶縁層４の上
から有機層５を形成する。Next, after the substrate 2 on which the insulating layer 4 is formed as described above is subjected to a normal substrate cleaning treatment, an organic layer 5 is formed on the insulating layer 4.
【００２１】有機層５を形成するにあたって、低分子タ
イプの有機層を用いる場合には、抵抗加熱蒸着法によ
り、まず、図２（ｄ）に示すように、発光層兼電子輸送
層としてのＡｌｑ3（トリス（８−キノリノラト）アル
ミニウム(III) ）有機膜５ａを絶縁層４の上から例えば
膜厚５０ｎｍで成膜する。続いて、図２（ｅ）に示すよ
うに、正孔輸送層としてのα−ＮＰＤ（Ｎ，Ｎ’−ビス
−（１−ナフチル）−Ｎ，Ｎ’−ジフェニルベンジジ
ン）有機膜５ｂをＡｌｑ3有機膜５ａの上に例えば膜厚
２０ｎｍで成膜する。さらに、図２（ｆ）に示すよう
に、正孔注入層としてのＣｕＰｃ（銅フタロシアニン）
有機膜５ｃをα−ＮＰＤ有機膜５ｂの上に例えば膜厚７
０ｎｍで成膜する。When an organic layer of a low molecular weight type is used to form the organic layer 5, first, as shown in FIG. 2D, Alq as a light emitting layer and an electron transporting layer is formed by a resistance heating evaporation method.3 (Tris (8-quinolinolato) aluminum (III)) An organic film 5a is formed on the insulating layer 4 to a thickness of, for example, 50 nm. Subsequently, as shown in FIG. 2E, the α-NPD (N, N′-bis- (1-naphthyl) -N, N′-diphenylbenzidine) organic film 5b as a hole transport layer is made of Alq3. A film having a thickness of, for example, 20 nm is formed on the organic film 5a. Further, as shown in FIG. 2F, CuPc (copper phthalocyanine) as a hole injection layer
The organic film 5c is formed on the α-NPD organic film 5b by, for example,
Film is formed at 0 nm.
【００２２】なお、高分子タイプの有機層を用いる場合
には、蒸着法の代わりにスピンコート法、アプリケータ
ーコート法、グラビアオフセット印刷法等の手法を採用
することができる。また、有機層５は、上述した３層構
造に限らず、表示素子として機能する層構造であればよ
い。When a polymer type organic layer is used, a method such as a spin coating method, an applicator coating method, a gravure offset printing method or the like can be employed instead of the vapor deposition method. Further, the organic layer 5 is not limited to the three-layer structure described above, and may be any layer structure that functions as a display element.
【００２３】次に、図２（ｇ）に示すように、マスク蒸
着法等のＰＶＤ法により有機層５の上から第二電極とな
る陽極（図４のＣｏｌｕｍｎ電極群）６を成膜する。本
例における陽極６は、図１に示すように、陰極３と直交
するように基板２の上下に平行に並んで形成された複数
本のストライプ状のパターンからなり、一端が基板２の
端部まで引き出されて不図示の駆動回路に接続される。Next, as shown in FIG. 2G, an anode (Column electrode group in FIG. 4) 6 serving as a second electrode is formed from above the organic layer 5 by a PVD method such as a mask evaporation method. As shown in FIG. 1, the anode 6 in the present example is composed of a plurality of stripe-shaped patterns formed in parallel with the substrate 2 so as to be perpendicular to the cathode 3, and one end is formed at the end of the substrate 2. And is connected to a drive circuit (not shown).
【００２４】陽極６の材料としては、前述した第一電極
としての陰極３の材料よりも抵抗率の高い材料（仕事関
数の大きい材料）が用いられる。具体的には、ＩＴＯ
（Indium Tin Oxide）からなる透明導電膜、非晶質透明
導電膜であるＩＤＩＸＯ（商品名：出光透明導電材料Id
emitsu Indium X-Metal Oxide 、出光興産株式会社製）
等が用いられる。As the material of the anode 6, a material having a higher resistivity (a material having a large work function) than the material of the cathode 3 as the above-mentioned first electrode is used. Specifically, ITO
(Indium Tin Oxide), IDIXO (trade name: Idemitsu transparent conductive material Id) which is an amorphous transparent conductive film
emitsu Indium X-Metal Oxide, manufactured by Idemitsu Kosan Co., Ltd.)
Are used.
【００２５】以上の工程により、有機ＥＬデバイス１の
表示部としての機能が完成する。すなわち、陰極３と陽
極６との間に挟まれて絶縁層４によって区画された有機
層５の部分が発光部７をなし、ドットマトリクス状のＥ
Ｌ表示部８が形成される。Through the above steps, the function of the organic EL device 1 as a display unit is completed. That is, a portion of the organic layer 5 sandwiched between the cathode 3 and the anode 6 and partitioned by the insulating layer 4 constitutes the light emitting section 7 and has a dot matrix E shape.
An L display section 8 is formed.
【００２６】次に、図１に示すように、第三電極をなす
スイッチ用電極（図４のＲｏｗ電極群）１２を透明性を
有する基材１１の上にストライプ状のパターンで形成す
る。スイッチ用電極１２は、後述する封止処理により基
板２と基材１１との外周部分が封止されたとき、図４及
び図５に示すように、陽極（Ｃｏｌｕｍｎ電極群）６と
マトリクスを組んで透明タッチスイッチ１３を構成する
ように基材１１の上に形成される。Next, as shown in FIG. 1, a switch electrode (Row electrode group in FIG. 4) 12 as a third electrode is formed on a transparent base material 11 in a stripe pattern. When the outer peripheral portion between the substrate 2 and the base material 11 is sealed by a sealing process described later, the switch electrode 12 forms a matrix with the anode (Column electrode group) 6 as shown in FIGS. Is formed on the base material 11 so as to constitute the transparent touch switch 13.
【００２７】基材１１の本体としては、ポリエステルま
たはポリエーテルサルホンなどのプラスチックフィルム
やガラス板が用いられる。本例では、厚さ１００μｍの
ポリエステルフィルム１１ａを基材１１の本体として用
い、このポリエステルフィルム１１ａの全面にコート膜
１１ｂとしてＳｉＯ2−Ａｌ2Ｏ3膜を形成して防湿処
理を施している。As the main body of the substrate 11, a plastic film such as polyester or polyether sulfone or a glass plate is used. In this example, a polyester film 11a having a thickness of 100 μm is used as the main body of the base material 11, and an SiO2 —Al2 O3 film is formed as a coating film 11b on the entire surface of the polyester film 11a, and is subjected to a moisture proof treatment.
【００２８】そして、ＳｉＯ2−Ａｌ2Ｏ3コート膜１
１ｂの上にＩＴＯ透明導電膜をスパッタ成膜する。その
後、前記ＩＴＯ透明導電膜を通常のフォトリソ法やスク
リーン印刷法等の手法によりエッチングレジスト形成
し、ＩＴＯのエッチャントでエッチングする。これによ
り、基材１１の上に透明電極をなすスイッチ用電極１２
が形成される。Then, the SiO2 —Al2 O3 coat film 1
1b, an ITO transparent conductive film is formed by sputtering. Thereafter, an etching resist is formed on the ITO transparent conductive film by a method such as a normal photolithography method or a screen printing method, and etching is performed with an etchant of ITO. As a result, the switch electrode 12 serving as a transparent electrode is formed on the substrate 11.
Is formed.
【００２９】なお、前記ＳｉＯ2−Ａｌ2Ｏ3コート膜
１１ｂの膜厚は、数１０ｎｍ〜数μｍの膜厚範囲で形成
される。また、スイッチ用電極１２をなすＩＴＯ透明導
電膜は、そのシート抵抗が数１０Ω／□〜数１００Ω／
□の範囲になるように成膜される。The thickness of the SiO2 —Al2 O3 coating film 11b is in the range of several tens nm to several μm. The ITO transparent conductive film forming the switch electrode 12 has a sheet resistance of several tens Ω / □ to several hundred Ω /
The film is formed so as to be in the range of □.
【００３０】次に、図１に示すように、基材１１の所定
箇所にスペーサー１４を形成する。スペーサー１４は、
後述する封止処理により基板２と基材１１との外周部分
が封止されたとき、図２（ｈ）に示すように、基板２と
基材１１との間が所定のギャップで挟持されるように、
スイッチ用電極１２が形成された基材１１の面側で所定
ピッチ（例えば数１００μｍ）をおいての複数箇所（例
えば隣接するスイッチ用電極１２の間）に形成される。Next, as shown in FIG. 1, a spacer 14 is formed at a predetermined position on the base material 11. The spacer 14
When the outer peripheral portion between the substrate 2 and the base material 11 is sealed by a sealing process described later, the substrate 2 and the base material 11 are sandwiched by a predetermined gap as shown in FIG. like,
The switch electrodes 12 are formed at a plurality of places (for example, between adjacent switch electrodes 12) at a predetermined pitch (for example, several 100 μm) on the surface side of the substrate 11 on which the switch electrodes 12 are formed.
【００３１】なお、基板２と基材１１との間のギャップ
は、図３（ａ）に示す状態から図３（ｂ）に示す状態ま
で基材１１が撓んで陽極６とスイッチ用電極１２が接触
導通してスイッチとして機能する程度の寸法（例えば５
μｍ以下）を有していればよい。The gap between the substrate 2 and the substrate 11 is such that the substrate 11 bends from the state shown in FIG. 3A to the state shown in FIG. A dimension sufficient to function as a switch through contact conduction (for example, 5
μm or less).
【００３２】また、スペーサー１４は、表示セグメント
上に形成されたとき、又は表示セグメント面積に対し大
面積のとき、ＥＬ表示部８の発光部７が発光した際の表
示の観察の妨げにならないように透明性を有しているこ
とが望ましい。さらに、スペーサー１４は、図３（ａ）
に示すスイッチ動作前の状態から図３（ｂ）に示すスイ
ッチ動作状態まで基材１１が撓み、スイッチ動作を解除
したときに図３（ａ）の状態に復元できるように所定の
弾性を有している。When the spacer 14 is formed on the display segment or has a large area with respect to the display segment area, the spacer 14 does not hinder the display observation when the light emitting section 7 of the EL display section 8 emits light. It is desirable to have transparency. Further, the spacer 14 is formed as shown in FIG.
The base material 11 bends from the state before the switch operation shown in FIG. 3 to the switch operation state shown in FIG. 3B, and has a predetermined elasticity so that the state shown in FIG. ing.
【００３３】上記のように作用するスペーサー１４の材
料としては、シリコーン樹脂、ポリエステルまたはアク
リルなどの合成樹脂が用いられる。また、スペーサー１
４の形成方法としては、スクリーン印刷法、グラビア印
刷法、オフセット印刷法などの各種印刷法やフォトレジ
スト法の手法が採用される。As a material of the spacer 14 acting as described above, a synthetic resin such as silicone resin, polyester or acrylic is used. Spacer 1
As a forming method of 4, a printing method such as a screen printing method, a gravure printing method, an offset printing method, or a photoresist method is employed.
【００３４】なお、スペーサー１４はその形状を問わな
いが、円形の場合、大きさがφ数１０μｍ〜数１００μ
ｍ（好ましくは１０μｍ〜１００μｍ）の範囲で、高さ
が０．０１μｍ〜数１００μｍ（好ましくは０．１μｍ
〜数１０μｍ）の範囲で形成される。The shape of the spacer 14 is not limited. In the case of a circular shape, the size of the spacer 14 is several tens μm to several hundred μm.
m (preferably 10 μm to 100 μm) and a height of 0.01 μm to several 100 μm (preferably 0.1 μm
To several tens of μm).
【００３５】次に、図１及び図２（ｈ）に示すように、
スイッチ用電極１２とスペーサー１４を形成した基材１
１の面を内側にし、スイッチ用電極１２とＥＬ表示部８
の陽極６とにより透明タッチスイッチ１３が構成される
ように、基板２に対して基材１１を位置合わせし、基板
２と基材１１との間の外周部分をエポキシ系接着剤や熱
溶着により封止処理する。以上の工程により、本例の有
機ＥＬデバイス１が完成する。Next, as shown in FIGS. 1 and 2 (h),
Substrate 1 on which switch electrode 12 and spacer 14 are formed
1, the switch electrode 12 and the EL display 8
The substrate 11 is aligned with the substrate 2 so that the transparent touch switch 13 is constituted by the anode 6 and the outer peripheral portion between the substrate 2 and the substrate 11 is formed by an epoxy-based adhesive or heat welding. Sealing is performed. Through the above steps, the organic EL device 1 of this example is completed.
【００３６】なお、封止処理は、有機ＥＬ素子が水分を
嫌うため、Ａｒ、Ｈｅ、Ｎ2ガス等のドライ雰囲気に置
換したグローブボックスの中で行うことが好ましい。The sealing treatment is preferably performed in a glove box replaced with a dry atmosphere of Ar, He, N2 gas or the like since the organic EL element dislikes moisture.
【００３７】このように、本例の有機ＥＬデバイス１
は、基板２上に第一電極（陰極）３を形成し、この第一
電極３のパターン上に絶縁層４のパターンを形成し、さ
らに絶縁層４のパターン上に有機層５を積層形成し、し
かる後、透明電極である第二電極（陽極）６を形成し、
基板２上の有機ＥＬデバイス層を封止する透明基材１１
の第二電極６側に第二電極６と電気的にマトリクスが形
成されるようにスイッチ用電極１２を形成し、基板２と
基材１１との間をスペーサー１４で所望のギャップを保
ちつつ挟持した状態で基板２と基材１１との外周部分が
封止された構成となっている。As described above, the organic EL device 1 of this embodiment
Comprises forming a first electrode (cathode) 3 on a substrate 2, forming a pattern of an insulating layer 4 on the pattern of the first electrode 3, and further forming an organic layer 5 on the pattern of the insulating layer 4. Thereafter, a second electrode (anode) 6 which is a transparent electrode is formed,
Transparent substrate 11 for sealing the organic EL device layer on substrate 2
A switching electrode 12 is formed on the second electrode 6 side such that a matrix is formed electrically with the second electrode 6, and the substrate 2 and the base material 11 are sandwiched between spacers 14 while maintaining a desired gap. In this state, the outer peripheral portions of the substrate 2 and the base material 11 are sealed.
【００３８】したがって、本例の有機ＥＬデバイス１で
は、ＥＬ表示部８における第二電極（陽極）６を透明タ
ッチスイッチ１３の一方の電極として兼用し、第二電極
と対面する透明タッチスイッチのスイッチ用電極が封止
部材である基材の内面に形成されるので、図６に示す従
来の構造と比較して、構成部品（電極、基材）を減らし
てデバイス全体の厚さを薄くでき、基材の重ね合わせに
よって生じる干渉光の影響を抑え、輝度の低下を軽減す
ることができる。その結果、透明タッチスイッチ付き有
機ＥＬデバイスが簡単な構造で安価に製造することがで
きる。Therefore, in the organic EL device 1 of the present embodiment, the second electrode (anode) 6 in the EL display section 8 is also used as one electrode of the transparent touch switch 13, and the switch of the transparent touch switch facing the second electrode is used. Since the electrodes for use are formed on the inner surface of the base material as the sealing member, the number of components (electrodes and base materials) can be reduced and the thickness of the entire device can be reduced as compared with the conventional structure shown in FIG. The effect of interference light generated by the superposition of the base materials can be suppressed, and a decrease in luminance can be reduced. As a result, an organic EL device with a transparent touch switch can be manufactured at a low cost with a simple structure.
【００３９】ところで、上述した実施の形態では、第一
電極を陰極３とし、第二電極を陽極６としており、陽極
６が透明タッチスイッチ１３の一方の電極を兼ねる構成
について説明したが、陰極３と陽極６を逆転させた構成
としてもよい。その場合、陰極３が透明電極で形成さ
れ、有機層５の層構造も逆転した構成となる。すなわ
ち、ＥＬ表示部８の一対の電極をなす第一電極と第二電
極は、基材１１の内面に形成されるスイッチ用電極と対
面して透明タッチスイッチ１３を構成する電極が透明電
極で形成されていればよい。In the above-described embodiment, the first electrode is used as the cathode 3 and the second electrode is used as the anode 6, and the anode 6 is also used as one electrode of the transparent touch switch 13. And the anode 6 may be reversed. In that case, the cathode 3 is formed of a transparent electrode, and the layer structure of the organic layer 5 is reversed. That is, the first electrode and the second electrode forming a pair of electrodes of the EL display unit 8 face the switch electrodes formed on the inner surface of the base material 11 and the electrodes constituting the transparent touch switch 13 are formed of transparent electrodes. It should just be done.
【００４０】また、上述した実施の形態におけるＥＬ表
示部８は、陰極（第一電極３）と陽極（第二電極）６と
が互いに直交するストライプ状をなし、これら電極３，
６間に有機層５を挟んだ構造としてドットマトリクスタ
イプのグラフィックパターンを表示するものであるが、
ドットマトリクスに限らず、日文字、アルファーニュー
メリック文字、固定表示パターン等で構成してもよい。The EL display unit 8 in the above-described embodiment has a stripe shape in which a cathode (first electrode 3) and an anode (second electrode) 6 are orthogonal to each other.
Although a dot matrix type graphic pattern is displayed as a structure in which the organic layer 5 is sandwiched between 6,
The present invention is not limited to the dot matrix, but may be composed of a Japanese character, an alphanumeric character, a fixed display pattern, or the like.
【００４１】[0041]
【発明の効果】以上の説明で明らかなように、本発明に
よれば、従来の構造と比較して、構成部品（電極、基
材）を減らしてデバイス全体の厚さを薄くでき、基材の
重ね合わせによって生じる干渉光の影響を抑え、輝度の
低下を軽減することができる。その結果、透明タッチス
イッチ付き有機ＥＬデバイスが簡単な構造で安価に製造
することができる。As is apparent from the above description, according to the present invention, compared with the conventional structure, the number of components (electrodes and base materials) can be reduced, and the thickness of the entire device can be reduced. , The influence of the interference light generated by the superimposition can be suppressed, and the decrease in luminance can be reduced. As a result, an organic EL device with a transparent touch switch can be manufactured at a low cost with a simple structure.
【図１】本発明による透明タッチスイッチ付き有機ＥＬ
デバイスの実施の形態を示す分解斜視図FIG. 1 shows an organic EL with a transparent touch switch according to the present invention.
Exploded perspective view showing an embodiment of a device
【図２】（ａ）〜（ｈ）図１の有機ＥＬデバイスの製造
工程を示す断面図FIGS. 2A to 2H are cross-sectional views illustrating manufacturing steps of the organic EL device of FIG.
【図３】（ａ），（ｂ）図１の有機ＥＬデバイスにおけ
るタッチスイッチの動作図FIGS. 3A and 3B are operation diagrams of a touch switch in the organic EL device of FIG. 1;
【図４】図１のタッチスイッチ部分の電極構造の概略図FIG. 4 is a schematic diagram of an electrode structure of a touch switch portion of FIG. 1;
【図５】図４のタッチスイッチの機能図FIG. 5 is a functional diagram of the touch switch of FIG. 4;
【図６】従来の有機ＥＬデバイスの断面図FIG. 6 is a cross-sectional view of a conventional organic EL device.
１…有機ＥＬデバイス、２…基板、３…第一電極（陽
極）、４…絶縁層、５…有機層、６…第二電極（陰
極）、７…発光部、８…ＥＬ表示部、１１…基材、１２
…第三電極（スイッチ用電極）、１３…透明タッチスイ
ッチ、１４…スペーサー。DESCRIPTION OF SYMBOLS 1 ... Organic EL device, 2 ... Substrate, 3 ... First electrode (anode), 4 ... Insulating layer, 5 ... Organic layer, 6 ... Second electrode (cathode), 7 ... Light emitting part, 8 ... EL display part, 11 ... Base material, 12
... third electrode (switch electrode), 13 ... transparent touch switch, 14 ... spacer.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０５Ｂ 33/14 Ｈ０５Ｂ 33/14 Ａ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl.7 Identification symbol FI Theme coat ゛ (Reference) H05B 33/14 H05B 33/14 A
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25018199AJP2001076886A (en) | 1999-09-03 | 1999-09-03 | Organic el device with transparent touch switch and its manufacture |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25018199AJP2001076886A (en) | 1999-09-03 | 1999-09-03 | Organic el device with transparent touch switch and its manufacture |
| Publication Number | Publication Date |
|---|---|
| JP2001076886Atrue JP2001076886A (en) | 2001-03-23 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25018199APendingJP2001076886A (en) | 1999-09-03 | 1999-09-03 | Organic el device with transparent touch switch and its manufacture |
| Country | Link |
|---|---|
| JP (1) | JP2001076886A (en) |
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