【０００１】[0001]
【発明の属する技術分野】本発明は、薄膜形成に用いる
スパッタリングターゲットに関する。さらに詳しくは、
一体構造型スパッタリングターゲットに関する。The present invention relates to a sputtering target used for forming a thin film. For more information,
The present invention relates to an integral structure type sputtering target.
【０００２】[0002]
【従来の技術】スパッタリング法は、真空中にＡｒガス
を導入し、陰極に負電圧を与えてグロー放電を発生させ
る。ここで生成したＡｒ＋イオンはターゲット（陰極）
に衝突し、ターゲットをスパッタし、被スパッタ粒子は
対向した陽極上の基板上に堆積し薄膜を形成する技術で
ある。2. Description of the Related Art In a sputtering method, an Ar gas is introduced into a vacuum and a negative voltage is applied to a cathode to generate a glow discharge. The generated Ar+ ion is the target (cathode)
This is a technique in which a target is sputtered and particles to be sputtered are deposited on a substrate on an opposed anode to form a thin film.
【０００３】一般的に、このスパッタリング法で用いら
れるターゲットはボンディング材でバッキングプレート
と接合して使用される。通常、バッキングプレートは純
銅あるいは銅系合金が使用され、ボンディング材はイン
ジウムのような低融点金属、半田のような低融点合金、
樹脂等が使用される。Generally, a target used in this sputtering method is used by bonding it to a backing plate with a bonding material. Normally, the backing plate is made of pure copper or a copper alloy, and the bonding material is a low melting point metal such as indium, a low melting point alloy such as solder,
A resin or the like is used.
【０００４】近年、スパッタリング装置はマグネトロン
スパッタリング装置のように、高スパッタレイトを得る
ために高出力でスパッタする装置が産業界の主流である
が、高出力でスパッタすると陰極の発熱量が多くなり、
高温のためボンディング材が溶けてターゲットがバッキ
ングプレートから剥離するという欠点がある。また、こ
の剥離はスパッタリング装置内において、バッキングプ
レートの冷却水による冷却不足でも起こる。In recent years, the mainstream of the industry is a sputtering apparatus, such as a magnetron sputtering apparatus, which sputters at a high output to obtain a high sputter rate.
There is a disadvantage that the bonding material melts due to the high temperature and the target peels off from the backing plate. Further, this peeling also occurs due to insufficient cooling of the backing plate by the cooling water in the sputtering apparatus.
【０００５】以上のような欠点を克服するため、ターゲ
ットとバッキングプレートを一体化し、同一材質で製作
した一体構造型ターゲットが、実開昭６１−１２０７５
８号、実開昭６１−１２５１６９号等で開示されてい
る。この一体構造型ターゲットはバッキングプレートを
使用しないため、高出力でスパッタしてもバッキングプ
レートからターゲットが剥離するという欠点はない。ま
た、このターゲットはボンディングを行なわないため加
工コストが安価である利点がある。また、一般的なボン
ディング付きターゲットは、不注意でスパッタし過ぎる
とバッキングプレートまでスパッタするという不都合を
生じるが、この一体構造型ターゲットは、従来のバッキ
ングプレート相当部までスパッタすることができ、経済
的である利点がある。In order to overcome the above-mentioned drawbacks, an integrated structure type target in which a target and a backing plate are integrated and manufactured from the same material is disclosed in Japanese Utility Model Laid-Open Publication No. 61-12075.
No. 8, No. 61-125169, and the like. Since this integral structure type target does not use a backing plate, there is no disadvantage that the target is peeled off from the backing plate even when sputtering is performed at a high output. Further, since this target does not perform bonding, there is an advantage that processing cost is low. In addition, a general bonding target has a disadvantage in that if it is inadvertently sputtered too much, it sputters up to the backing plate. There are advantages.
【０００６】この一体構造型ターゲットは、図２に示す
ように、ターゲットのツバ部１２も一体構造で製作さ
れ、そのツバ部にはボルト穴１３が多数設けられてお
り、スパッタリング装置のターゲット装着部に装着する
場合、ツバ部のボルト穴１３にボルトを締め込んで装着
される。As shown in FIG. 2, in this integral structure type target, a flange 12 of the target is also manufactured in an integral structure, and a plurality of bolt holes 13 are provided in the flange. In the case of mounting on a bolt, it is mounted by tightening a bolt in the bolt hole 13 of the collar portion.
【０００７】この一体構造型ターゲットは、使い終わる
と使い捨てにされる。したがって、ターゲット材料は、
例えばアルミニウム系金属のような比較的材料コストの
安価なターゲットにのみ適用され、材料コストが高価な
ターゲットには適用されていないのが現状である。This one-piece target is thrown away after use. Therefore, the target material is
At present, it is applied only to relatively inexpensive targets, such as aluminum-based metals, and is not applied to targets with high material costs.
【０００８】しかし、この場合、Ａｌ系金属のような比
較的に機械的強度が低いターゲットは、バッキングプレ
ート相当部まで高出力でスパッタすると冷却水の水圧に
よるバッキングプレート全体の反りが発生し、スパッタ
リング装置のターゲット装着部で水もれや異常放電等の
不具合が発生し易い。However, in this case, if the target having relatively low mechanical strength, such as an Al-based metal, is sputtered at a high output to a portion corresponding to the backing plate, the entire backing plate is warped due to the water pressure of the cooling water, and the sputtering is performed. Problems such as water leakage and abnormal discharge are likely to occur in the target mounting portion of the apparatus.
【０００９】近年、たとえばＣＤ、ＤＶＤの反射膜とし
てＡｌ−Ｔｉ、Ａｌ−Ｃｒ等の薄膜が多用されている。
また、ＬＳＩの配線材料としてＡｌ薄膜が多用されてい
る。これらの薄膜はＡｌ−Ｔｉ、Ａｌ−Ｃｒ、Ａｌ等の
ターゲットをスパッタして得られる。一般に、このよう
なＡｌやＡｌ系合金ターゲットは、ブリネル硬度約２０
〜４０程度で比較的に軟質で機械的強度が低い。したが
って、このような材料で一体構造型ターゲットを作成
し、高出力でのスパッタに供すると、スパッタリング装
置のターゲット装着部に装着したバッキングプレート相
当部の機械的強度が不足するので、上記のような不具合
が発生する。In recent years, for example, thin films of Al-Ti, Al-Cr, etc. have been frequently used as reflection films for CDs and DVDs.
Al thin films are often used as wiring materials for LSIs. These thin films are obtained by sputtering a target of Al-Ti, Al-Cr, Al or the like. Generally, such an Al or Al-based alloy target has a Brinell hardness of about 20.
Approximately 40 and relatively soft and low in mechanical strength. Therefore, if an integral structure type target is made of such a material and subjected to high-power sputtering, the mechanical strength of the backing plate equivalent part mounted on the target mounting part of the sputtering apparatus is insufficient, so that Failure occurs.
【００１０】[0010]
【発明が解決しようとする課題】本発明者は、このよう
な不具合が発生しないターゲットとして、このような軟
質のターゲットとブリネル硬度約７０〜１００程度の硬
質の機械的強度が大きい硬質Ａｌ系合金、たとえばＪＩ
Ｓ５０５２のＡｌ系合金のバッキングプレートとを摩擦
圧接法で接合したスパッタリングターゲットを先に特許
出願した（特願平１０−２７４２１０号）。また、本発
明者は、ターゲットとバッキングプレートを同一材料で
一体的に形成した円盤状のバッキングプレート一体構造
型ターゲットにおいて、底部外周に螺旋状のネジを切っ
た該ターゲットと内周に螺旋状のネジを切った円環状の
ツバ部とを、各ネジ合わせによって接合した一体構造型
スパッタリングターゲットを先に特許出願した（特願平
１０−３０３１７１号）。本発明は、これらの特許出願
の別の応用と改良に関する。SUMMARY OF THE INVENTION The present inventor has proposed that a soft Al-based alloy having a high mechanical strength of about 70 to 100 having a Brinell hardness of about 70 to 100 is used as a target that does not cause such problems. For example, JI
A patent application was previously filed for a sputtering target in which the Al-based alloy backing plate of S5052 was joined by friction welding (Japanese Patent Application No. 10-274210). In addition, the present inventor has proposed a disk-shaped backing plate integrated structure type target in which a target and a backing plate are integrally formed of the same material, and a helical screw formed on the inner periphery with the target having a helical thread cut on the bottom outer periphery. A patent application was filed earlier for an integral structure type sputtering target in which a threaded annular collar portion was joined by screwing (Japanese Patent Application No. 10-303171). The present invention relates to other applications and improvements of these patent applications.
【００１１】[0011]
【課題を解決するための手段】本発明は、ターゲットと
バッキングプレートをＡｌあるいはＡｌ系合金のような
軟質金属材料で一体的に形成した円盤状のバッキングプ
レート一体構造型ターゲットにおいて、該ターゲットの
底部の外周と硬質Ａｌ系合金の円環状のツバ部の内周と
を摩擦圧接法で接合した一体構造型スパッタリングター
ゲットである。SUMMARY OF THE INVENTION The present invention provides a disk-shaped backing plate integrated structure type target in which the target and the backing plate are integrally formed of a soft metal material such as Al or an Al-based alloy. And an inner periphery of an annular brim portion of a hard Al-based alloy are joined by a friction welding method.
【００１２】[0012]
【発明の実施の形態】以下、図１に基づいて本発明を説
明する。図１は本発明になるターゲットの断面図であ
る。図中、１はターゲットである。２はスパッタリング
装置のターゲット装着部に装着するに必要な円環状のツ
バ部であり、複数のボルト穴３が開けてある。円盤状の
ターゲットと円環状のツバ部は摩擦圧接法で接合されて
いる。４はその接合部である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to FIG. FIG. 1 is a sectional view of a target according to the present invention. In the figure, 1 is a target. Reference numeral 2 denotes an annular collar portion required for mounting on a target mounting portion of the sputtering apparatus, and has a plurality of bolt holes 3 formed therein. The disk-shaped target and the annular collar are joined by a friction welding method. Reference numeral 4 denotes the joint.
【００１３】ターゲット１の材質は、Ａｌ、Ａｌ−Ｔ
ｉ、Ａｌ−Ｃｒ等のブリネル硬度約２０〜４０程度の軟
質Ａｌ系金属である。円環状のツバ部２は、ＪＩＳ５０
５２のブリネル硬度約７０〜１００程度の硬質Ａｌ系合
金である。本発明ではブリネル硬度の大きい硬質Ａｌ系
合金を使用したので、高出力でスパッタしターゲットが
薄くなっても、ツバ部の機械的強度が大きいため、冷却
水の水圧によるターゲットの反りは発生せず、スパッタ
リング装置のターゲット装着部での水もれは発生しない
特徴がある。The material of the target 1 is Al, Al-T
i, a soft Al-based metal having a Brinell hardness of about 20 to 40, such as Al-Cr. The annular collar 2 is JIS50
52 is a hard Al-based alloy having a Brinell hardness of about 70 to 100. In the present invention, a hard Al-based alloy having a large Brinell hardness is used. Therefore, even if the target is thinned by sputtering at high output, the mechanical strength of the brim portion is large, so that the warping of the target due to the water pressure of the cooling water does not occur. In addition, there is a feature that water leakage does not occur in the target mounting portion of the sputtering apparatus.
【００１４】本発明で用いる摩擦圧接法は、ターゲット
または円環状のツバ部のいずれか一方を回転体の爪部に
はさんで高速で回転させ、他方を固定して両方を接触さ
せ、回転の摩擦熱で両方を接合させる方法である。In the friction welding method used in the present invention, one of a target and an annular brim portion is rotated at a high speed with a claw portion of a rotating body interposed therebetween, and the other is fixed and both are brought into contact with each other. This is a method of joining both by frictional heat.
【００１５】[0015]
【実施例】２０１ｍφ×２０ｍｔのＡｌ−Ｔｉ合金（Ｔ
ｉ１．５ｗｔ％）のターゲット１を作成した。次に、外
径２４５ｍφ、内径２０１ｍφ、厚さ２０ｍｍの円環状
のＪＩＳ５０５２Ａｌ合金のツバ部２を作成し、８ケ所
にボルト穴３を開けた。この時、各材料の外周、内周は
鏡面仕上げをした。ツバ部２を摩擦圧接機で１０００回
転で回転させ、ターゲット１と図１に示すように摩擦圧
接させた。圧接後、Ｘ線透過装置および超音波探傷装置
により接合面を観察した結果、接合面は良好に接合され
ていた。EXAMPLE An 201 mφ × 20 mt Al-Ti alloy (T
i1.5 wt%) of target 1. Next, an annular JIS 5052 Al alloy collar 2 having an outer diameter of 245 mφ, an inner diameter of 201 mφ, and a thickness of 20 mm was formed, and eight bolt holes 3 were formed. At this time, the outer periphery and the inner periphery of each material were mirror-finished. The brim portion 2 was rotated at 1000 rotations by a friction welding machine, and was brought into friction welding with the target 1 as shown in FIG. After the pressure welding, the bonding surface was observed with an X-ray transmission device and an ultrasonic flaw detector, and as a result, the bonding surface was satisfactorily bonded.
【００１６】観察後、ターゲット部を２００ｍφ×１０
ｍｔに、ツバ部を２４０ｍφ×６ｍｔに仕上げ加工し、
本発明のスパッタリングターゲットを作成した。このタ
ーゲットをマグネトロンスパッタリング装置の装着部に
装着し、スパッタした。出力６ｋｗ、スパッタレイト２
００オンク゛ストローム／ｓｅｃ、水圧４ｋｇ／ｃ
ｍ２、３００ｋｗＨでスパッタしたが、スパッタリング
ターゲットの反りは観察されず、ターゲット装着部から
の水もれもなかった。After the observation, the target portion was set to 200 mφ × 10
mt, the collar part is finished to 240mφ × 6mt,
A sputtering target of the present invention was prepared. This target was mounted on a mounting portion of a magnetron sputtering device and sputtered. Output 6kw, spatter rate 2
00 angstroms / sec, water pressure 4 kg / c
Although sputtering was performed at m2 and 300 kWH, no warping of the sputtering target was observed, and no water leaked from the target mounting portion.
【００１７】[0017]
【比較例】実施例と同形状のＡｌ−Ｔｉ合金（Ｔｉ１．
５ｗｔ％）のターゲットバッキングプレート一体構造型
スパッタリングターゲット（図２）を作成した。このタ
ーゲットを同じスパッタリング装置の装着部に装着し、
実施例と同一スパッタ条件でスパッタした結果、２ｍｍ
のターゲットの反りが観察され、ターゲットの異常放電
が発生し使用できなくなった。Comparative Example An Al-Ti alloy (Ti1.
(5 wt%), a sputtering target with a target backing plate integrated structure (FIG. 2) was prepared. This target is mounted on the mounting part of the same sputtering device,
2 mm as a result of sputtering under the same sputtering conditions as in the example.
The target was warped, abnormal discharge of the target occurred, and the target became unusable.
【００１８】[0018]
【発明の効果】本発明によれば、ターゲットのツバ部の
機械的強度が高いため、高水圧、高出力でスパッタして
もターゲットの反り、装着部での水もれ、異常放電等の
不具合を生じることはない効果がある。また、ターゲッ
トを使い捨てにできるため、バッキングプレートの移
動、管理の必要がない利点がある。According to the present invention, since the mechanical strength of the brim portion of the target is high, even if sputtering is performed at high water pressure and high output, defects such as warping of the target, water leakage at the mounting portion, and abnormal discharge are caused. Has no effect. In addition, since the target can be disposable, there is an advantage that there is no need to move and manage the backing plate.
【図１】本発明になる一体構造型スパッタリングターゲ
ットの断面図である。FIG. 1 is a sectional view of an integral structure type sputtering target according to the present invention.
【図２】従来の一体構造型スパッタリングターゲットの
断面図である。FIG. 2 is a sectional view of a conventional integral structure type sputtering target.
１、１１、 ターゲット ２、１２、 ツバ部 ３、１３、 ボルト穴 ４、 摩擦圧接法による接合部 1, 11, Target 2, 12, Flange 3, 13, Bolt hole 4, Joined part by friction welding
【手続補正書】[Procedure amendment]
【提出日】平成１２年５月１２日（２０００．５．１
２）[Submission Date] May 12, 2000 (2000.5.1)
2)
【手続補正１】[Procedure amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００８[Correction target item name] 0008
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【０００８】しかし、この場合、Ａｌ系金属のような比
較的に機械的強度が低いターゲットは、バッキングプレ
ート相当部まで高出力でスパッタすると冷却水の水圧に
よるターゲット全体の反りが発生し、スパッタリング装
置のターゲット装着部で水もれや異常放電等の不具合が
発生し易い。However, in this case, if the target having a relatively low mechanical strength, such as an Al-based metal, is sputtered at a high output to a portion corresponding to the backing plate, the entiretarget is warped due to the water pressure of the cooling water, and the sputtering apparatus is used. In the target mounting portion, problems such as water leakage and abnormal discharge are likely to occur.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11109885AJP2000265265A (en) | 1999-03-12 | 1999-03-12 | Integrated structure type sputtering target |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11109885AJP2000265265A (en) | 1999-03-12 | 1999-03-12 | Integrated structure type sputtering target |
| Publication Number | Publication Date |
|---|---|
| JP2000265265Atrue JP2000265265A (en) | 2000-09-26 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11109885APendingJP2000265265A (en) | 1999-03-12 | 1999-03-12 | Integrated structure type sputtering target |
| Country | Link |
|---|---|
| JP (1) | JP2000265265A (en) |
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| US20090045051A1 (en)* | 2007-08-13 | 2009-02-19 | Stephane Ferrasse | Target designs and related methods for coupled target assemblies, methods of production and uses thereof |
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| US20130161188A1 (en)* | 2010-06-18 | 2013-06-27 | Robert Linsbod | Method for Bonding Components of a Sputtering Target, a Bonded Assembly of Sputtering Target Components and the Use Thereof |
| US8647484B2 (en) | 2005-11-25 | 2014-02-11 | Applied Materials, Inc. | Target for sputtering chamber |
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| US8968536B2 (en) | 2007-06-18 | 2015-03-03 | Applied Materials, Inc. | Sputtering target having increased life and sputtering uniformity |
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|---|---|---|---|---|
| US7504008B2 (en) | 2004-03-12 | 2009-03-17 | Applied Materials, Inc. | Refurbishment of sputtering targets |
| US9127362B2 (en) | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
| US11658016B2 (en) | 2005-10-31 | 2023-05-23 | Applied Materials, Inc. | Shield for a substrate processing chamber |
| US10347475B2 (en) | 2005-10-31 | 2019-07-09 | Applied Materials, Inc. | Holding assembly for substrate processing chamber |
| US8647484B2 (en) | 2005-11-25 | 2014-02-11 | Applied Materials, Inc. | Target for sputtering chamber |
| US8968536B2 (en) | 2007-06-18 | 2015-03-03 | Applied Materials, Inc. | Sputtering target having increased life and sputtering uniformity |
| US20090045051A1 (en)* | 2007-08-13 | 2009-02-19 | Stephane Ferrasse | Target designs and related methods for coupled target assemblies, methods of production and uses thereof |
| US8702919B2 (en)* | 2007-08-13 | 2014-04-22 | Honeywell International Inc. | Target designs and related methods for coupled target assemblies, methods of production and uses thereof |
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