【０００１】[0001]
【発明の属する技術分野】本発明は、たとえば発光輝度
が大幅に改善されたＧａＮ系化合物半導体による青色発
光の発光ダイオードを用いた半導体発光装置に係り、波
長変換して信頼度の高い白色発光等が得られるようにし
た半導体発光装置及びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device using, for example, a blue light emitting diode made of a GaN-based compound semiconductor whose emission luminance is greatly improved. And a method of manufacturing the same.
【０００２】[0002]
【従来の技術】青色発光の発光ダイオード（以下、「Ｌ
ＥＤ」と記す）は、近来になって、ＧａＮ，ＧａＡｌ
Ｎ，ＩｎＧａＮ及びＩｎＡｌＧａＮ等のＧａＮ系化合物
半導体を利用することによって、発光輝度の向上に大き
な進展をみせた。そして、旧来からの赤（Ｒ），緑
（Ｇ），青（Ｂ）発光のＬＥＤとの組合せによって、こ
れらのＬＥＤの３個を１ドットとする高画質のフルカラ
ー画像の形成が可能となった。2. Description of the Related Art Light emitting diodes emitting blue light (hereinafter referred to as "L").
ED ”) recently became GaN, GaAl
The use of GaN-based compound semiconductors such as N, InGaN, and InAlGaN has made great progress in improving light emission luminance. The combination of the conventional red (R), green (G), and blue (B) light emitting LEDs makes it possible to form a high-quality full-color image using three of these LEDs as one dot. .
【０００３】ＬＥＤの分野では、フルカラー対応には光
の三原色のＲ，Ｇ，Ｂが必要であるから、これらの発光
色のＬＥＤのより一層の開発と改良が主である。その一
方で、たとえばＲ，Ｇ，Ｂの合成によってしか得られな
い白色発光を単一のＬＥＤで達成しようとする試みも既
になされている。このような試みの一つとして、たとえ
ば特開平７−９９３４５号公報に開示されたものがあ
る。In the field of LEDs, R, G, and B of the three primary colors of light are required for full-color support. Therefore, further development and improvement of LEDs of these luminescent colors are mainly performed. On the other hand, attempts have already been made to achieve white light emission that can be obtained only by combining R, G, and B with a single LED. One of such attempts is disclosed in, for example, JP-A-7-99345.
【０００４】この公報に記載のＬＥＤは、発光チップを
搭載するリードフレームのマウント部を含めて樹脂によ
って封止するいわゆるＬＥＤランプのタイプとしたもの
である。そして、発光チップの発光波長を変えて異なっ
た発光色とするために、発光チップの周りのマウント部
に蛍光物質を含んだ内皮樹脂（公報においては、「第１
の樹脂」と記載）によって充填し、この内皮樹脂の硬化
後に外皮樹脂（公報においては、「第２の樹脂」と記
載）で封止した構成を持つ。また、内皮及び外皮の樹脂
はそれぞれエポキシ樹脂が利用され、内皮樹脂に含ませ
る蛍光物質としては蛍光染料，蛍光顔料，蛍光体が用い
られている。The LED described in this publication is of a so-called LED lamp type that is sealed with a resin including a mount portion of a lead frame on which a light emitting chip is mounted. Then, in order to change the emission wavelength of the light emitting chip to obtain a different emission color, the mount around the light emitting chip includes an endothelial resin containing a fluorescent substance (in the publication, “first type”).
) And sealed with an outer skin resin (in the gazette, described as “second resin”) after curing of the endothelial resin. Epoxy resin is used for the resin of the inner skin and the resin of the outer skin, respectively, and a fluorescent dye, a fluorescent pigment, and a fluorescent material are used as the fluorescent material contained in the endothelial resin.
【０００５】このような蛍光物質を含む内皮樹脂によっ
て発光チップの周りとマウント部の内面にかけてを封止
することで、発光チップからの発光の波長が蛍光物質に
よって変えられる。したがって、外皮樹脂から放出され
る発光は発光チップが本来持つ色と異なる色となり、た
とえば高輝度のＧａＮ系化合物半導体を利用した青色の
発光チップを白色発光のデバイスとして使えるようにな
る。By sealing the area around the light emitting chip and the inner surface of the mount with such an endothelial resin containing a fluorescent substance, the wavelength of light emitted from the light emitting chip can be changed by the fluorescent substance. Therefore, the light emitted from the outer cover resin has a color different from the color originally possessed by the light emitting chip. For example, a blue light emitting chip using a high-brightness GaN-based compound semiconductor can be used as a white light emitting device.
【０００６】ここで、蛍光物質を含む内皮樹脂とこれを
覆ってＬＥＤランプの外郭を形成する外皮樹脂の二重皮
膜とするのは、色変換のための蛍光物質を発光チップに
近い周りに集めておくためである。Here, the double coating of the endothelial resin containing the fluorescent substance and the outer resin covering the LED resin to form the outer shell of the LED lamp is formed by collecting the fluorescent substance for color conversion around the light emitting chip. It is to keep.
【０００７】すなわち、特開平１０−９３１４６号公報
に開示されているように、ＬＥＤランプの樹脂の全体に
蛍光物質を含ませることによっても色変換は可能である
が、外部からの光や隣接配置のＬＥＤからの光が入り込
むと、この入射光によって蛍光物質が励起される。した
がって、点灯モードにないＬＥＤが発光しているように
見え、多数のＬＥＤを配列したディスプレイの場合では
混色を生じて画質を低下させる。このことから、先の公
報に記載のＬＥＤは、内皮と外皮の樹脂の皮膜層に分
け、内皮樹脂だけに蛍光物質を含ませることによって、
外部からの光に蛍光物質が晒されるのを抑えて励起によ
る発光を阻止しようとしたのである。That is, as disclosed in Japanese Patent Application Laid-Open No. Hei 10-93146, color conversion can be performed by incorporating a fluorescent substance into the entire resin of the LED lamp. When the light from the LED enters, the incident light excites the fluorescent substance. Therefore, the LEDs that are not in the lighting mode appear to emit light, and in the case of a display in which a large number of LEDs are arranged, color mixing occurs and image quality is reduced. From this, the LED described in the above publication is divided into an endothelium and an outer skin resin coating layer, and by containing a fluorescent substance only in the endothelium resin,
They tried to prevent the fluorescent substance from being exposed to light from the outside and to prevent light emission due to excitation.
【０００８】[0008]
【発明が解決しようとする課題】ところが、先の公報に
記載のＬＥＤの製造では、発光チップをマウントに搭載
した後に内皮樹脂によってその周りを封止し、この内皮
樹脂が硬化した後に外皮樹脂によって封止するという工
程を踏む。すなわち、内皮樹脂の充填とその硬化の後に
外皮樹脂を充填して硬化させる二重モールドによるの
で、製造時間が長くなるほか製造設備も複雑になりがち
である。However, in the manufacture of the LED described in the above-mentioned publication, a light emitting chip is mounted on a mount, and the periphery thereof is sealed with an endothelial resin. A step of sealing is performed. In other words, since a double mold is used in which the inner resin is filled and cured after the outer resin is filled and cured, the production time becomes longer and the production equipment tends to be complicated.
【０００９】また、このような内皮と外皮の樹脂の二重
モールドでは、外皮樹脂が硬化するときに三次元の向き
の収縮があることから、たとえ内皮及び外皮の樹脂を共
通のエポキシ樹脂としていても、これらの樹脂の界面に
剥離や光学的な歪みの発生を伴いやすい。更に、熱衝撃
試験等の急激な温度変化による界面剥離の拡大も生じや
すい。このような内皮樹脂と外皮樹脂の界面との間の光
学的な歪みや界面剥離は、発光チップからの発光に少な
からず影響を及ぼし発光輝度の低下を招く。Further, in such a double mold of the inner skin and the outer skin resin, since the outer skin resin is contracted in a three-dimensional direction when the outer skin resin is cured, even if the inner skin and the outer skin resin are used as a common epoxy resin. In addition, separation and optical distortion are likely to occur at the interface between these resins. In addition, interface peeling is likely to increase due to a rapid temperature change such as a thermal shock test. Such optical distortion and interface peeling between the interface between the endothelial resin and the outer cover resin have a considerable effect on light emission from the light emitting chip, resulting in a decrease in light emission luminance.
【００１０】このように、蛍光物質を封止樹脂の中に混
入して発光波長を変換してたとえば白色発光として得る
ことはできるが、内皮と外皮の樹脂の二重モールドによ
る場合では、その生産性の面だけでなく内皮と外皮との
間の界面の剥離による発光輝度の低下が避けられない。As described above, a fluorescent substance can be mixed into a sealing resin to convert the emission wavelength to obtain, for example, white light emission. It is inevitable that the luminance of the light emitted by the interface between the endothelium and the outer skin is reduced as well as the luminance.
【００１１】本発明において解決すべき課題は、波長変
換用の蛍光物質を含む層との間に界面ができないように
して発光輝度を高く維持できる半導体発光装置及びその
製造方法を提供することにある。The problem to be solved in the present invention is to provide a semiconductor light emitting device capable of maintaining a high light emission luminance by preventing an interface from being formed between the layer containing a fluorescent substance for wavelength conversion and a method of manufacturing the same. .
【００１２】[0012]
【課題を解決するための手段】本発明は、発光素子を樹
脂のパッケージによって封止した半導体発光装置であっ
て、前記樹脂のパッケージを、共通の樹脂を生地とする
封止樹脂層と発光波長変換用の蛍光物質を含有した蛍光
膜層との２層構造とするとともに前記封止樹脂層と蛍光
膜層との間の境界層を前記共通の樹脂の生地によって接
合し、前記蛍光膜層を前記発光素子からの光路中に含ま
せてなることを特徴とする。SUMMARY OF THE INVENTION The present invention relates to a semiconductor light emitting device in which a light emitting element is sealed by a resin package, wherein the resin package comprises a sealing resin layer having a common resin as a base material and an emission wavelength. A two-layer structure of a fluorescent film layer containing a fluorescent material for conversion and a boundary layer between the sealing resin layer and the fluorescent film layer are joined by the common resin material, and the fluorescent film layer is formed. It is characterized by being included in an optical path from the light emitting element.
【００１３】このような構成では、蛍光膜層と封止樹脂
層との間が共通の樹脂を生地とするように連なるので、
これらの層どうしの境界面の剥離がなく、発光素子から
の発光輝度の低下を抑えることができ、波長変換された
発光を効率的に放出することができる。In such a configuration, the portion between the fluorescent film layer and the sealing resin layer is connected so that the common resin is used as a material.
There is no separation of the boundary surface between these layers, a decrease in light emission luminance from the light emitting element can be suppressed, and the wavelength-converted light can be emitted efficiently.
【００１４】また、本発明の製造方法は、前記封止樹脂
層と蛍光膜層とを、蛍光物質を含有する一次成形樹脂材
を遠心分離法によって層分離して形成することを特徴と
する。Further, the manufacturing method of the present invention is characterized in that the sealing resin layer and the fluorescent film layer are formed by separating a primary molding resin material containing a fluorescent substance by a centrifugal separation method.
【００１５】この製造方法では、一次成形樹脂材だけを
用いてパッケージをモールドできるとともに封止樹脂層
と蛍光膜層とに分離するので、工程数の削減と層どうし
の境界面の剥離が抑えられる。In this manufacturing method, the package can be molded using only the primary molding resin material, and the package is separated into the sealing resin layer and the fluorescent film layer. Therefore, the number of steps can be reduced and separation of the interface between layers can be suppressed. .
【００１６】[0016]
【発明の実施の形態】請求項１に記載の発明は、発光素
子を樹脂のパッケージによって封止した半導体発光装置
であって、前記樹脂のパッケージを、共通の樹脂を生地
とする封止樹脂層と発光波長変換用の蛍光物質を含有し
た蛍光膜層との２層構造とするとともに前記封止樹脂層
と蛍光膜層との間の境界層を前記共通の樹脂の生地によ
って接合し、前記蛍光膜層を前記発光素子からの光路中
に含ませてなる半導体発光装置であり、封止樹脂層と蛍
光膜層との間の剥離がなく発光素子からの発光輝度を落
とすことなく波長変換して発光させるという作用を有す
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS The invention according to claim 1 is a semiconductor light emitting device in which a light emitting element is sealed by a resin package, wherein the resin package is a sealing resin layer using a common resin as a material. And a fluorescent film layer containing a fluorescent substance for emission wavelength conversion, and a boundary layer between the encapsulating resin layer and the fluorescent film layer is bonded by the common resin cloth to form the fluorescent layer. A semiconductor light emitting device in which a film layer is included in an optical path from the light emitting element, wherein the wavelength conversion is performed without reducing the emission luminance from the light emitting element without separation between the sealing resin layer and the fluorescent film layer. It has the function of emitting light.
【００１７】請求項２に記載の発明は、前記発光素子を
その底部面に導通搭載する有底状の反射ケースを備え、
前記蛍光膜層を前記発光素子を含んで前記反射ケースの
底面側に展開させ、前記封止樹脂層を前記蛍光膜層の表
面側に形成してなる請求項１記載の半導体発光装置であ
り、本発明の製造方法を適用する場合、反射ケース自身
を遠心分離のための容器としてそのまま利用できるとい
う作用を有する。According to a second aspect of the present invention, there is provided a bottomed reflecting case for conductively mounting the light emitting element on a bottom surface thereof,
The semiconductor light emitting device according to claim 1, wherein the fluorescent film layer is developed on the bottom surface side of the reflection case including the light emitting element, and the sealing resin layer is formed on a front surface side of the fluorescent film layer, When the manufacturing method of the present invention is applied, there is an effect that the reflection case itself can be used as it is as a container for centrifugal separation.
【００１８】請求項３に記載の発明は、前記発光素子を
搭載するリードフレームを備え、前記封止樹脂層を前記
発光素子を含んで前記リードフレームと一体に形成し、
前記蛍光膜層を前記封止樹脂層の表面に形成してなる請
求項１記載の半導体発光装置であり、蛍光膜層と封止樹
脂層とによるパッケージの形状をたとえば砲弾状とする
ことでＬＥＤランプ型の発光装置が得られるという作用
を有する。According to a third aspect of the present invention, there is provided a lead frame on which the light emitting element is mounted, wherein the sealing resin layer is formed integrally with the lead frame including the light emitting element,
2. The semiconductor light emitting device according to claim 1, wherein the fluorescent film layer is formed on a surface of the sealing resin layer, and a package formed by the fluorescent film layer and the sealing resin layer has a shape of, for example, a shell. This has the function of obtaining a lamp-type light emitting device.
【００１９】請求項４に記載の発明は、請求項１から３
のいずれかに記載の半導体発光装置の製造方法であっ
て、前記封止樹脂層と蛍光膜層とを、蛍光物質を含有す
る一次成形樹脂材を遠心分離法によって層分離して形成
する半導体発光装置の製造方法であり、一次成形樹脂材
のみを充填して遠心分離するだけの工程で済み、二重モ
ールド等の工程を省けるという作用を有する。The invention according to claim 4 is the invention according to claims 1 to 3
The method for manufacturing a semiconductor light emitting device according to any one of claims 1 to 3, wherein the sealing resin layer and the fluorescent film layer are formed by separating a primary molding resin material containing a fluorescent substance by a centrifugal separation method. This is a method of manufacturing an apparatus, which requires only a step of filling only the primary molding resin material and centrifuging, and has an effect of eliminating a step of double molding and the like.
【００２０】図１は本発明の一実施の形態による半導体
発光装置の概略縦断面図であり、反射ケースを用いた例
として示す。FIG. 1 is a schematic vertical sectional view of a semiconductor light emitting device according to an embodiment of the present invention, which is shown as an example using a reflection case.
【００２１】図１において、有底状であって絶縁性の反
射ケース１に一対のリード２ａ，２ｂが組み込まれ、一
方のリード２ａの上に発光素子３が搭載されている。リ
ード２ａ，２ｂは反射ケース１の底部の上面に展開され
るとともに外に突き出る形状を持ち、この突き出た部分
が配線基板（図示せず）の上に形成された配線パターン
に導通搭載される。In FIG. 1, a pair of leads 2a and 2b are incorporated in a bottomed and insulating reflective case 1, and a light emitting element 3 is mounted on one of the leads 2a. The leads 2a and 2b are formed on the upper surface of the bottom of the reflection case 1 and have a shape protruding outward, and the protruding portion is conductively mounted on a wiring pattern formed on a wiring board (not shown).
【００２２】発光素子３は、従来技術の項で述べたＧａ
Ｎ系化合物半導体を利用した高輝度の青色発光のＬＥＤ
である。この発光素子３は、サファイアを素材とした基
板３ａの表面に、たとえばＧａＮのｎ型層，ＩｎＧａＮ
の活性層及びＧａＮのｐ型層を積層したものであり、基
板３ａの底面をリード２ａの表面に載せて絶縁性または
導電性の接着剤により固定される。そして、従来周知の
ように、ｐ型層の一部がエッチングされてｎ型層を露出
させ、この露出したｎ型層の表面にｎ側電極を形成し、
ｐ型層の表面にはｐ側電極を形成し、これらのｎ側及び
ｐ側の電極にＡｕを利用したワイヤ４ａ，４ｂをそれぞ
れリード２ａ，２ｂとの間でボンディングしている。The light emitting element 3 is formed of Ga as described in the section of the prior art.
High-brightness blue light emitting LED using N-based compound semiconductor
It is. The light-emitting element 3 includes, for example, an n-type layer of GaN, InGaN, on a surface of a substrate 3a made of sapphire.
The active layer and the p-type layer of GaN are laminated, and the bottom surface of the substrate 3a is placed on the surface of the lead 2a and fixed with an insulating or conductive adhesive. Then, as is conventionally known, a part of the p-type layer is etched to expose the n-type layer, and an n-side electrode is formed on the surface of the exposed n-type layer,
A p-side electrode is formed on the surface of the p-type layer, and wires 4a and 4b using Au are bonded to the n-side and p-side electrodes with the leads 2a and 2b, respectively.
【００２３】青色発光の発光素子３に対して、その発光
波長を変換して白色発光とするとともに発光素子３を保
護するためのパッケージとして、蛍光膜層５と封止樹脂
層６とを反射ケース１の中に形成させる。これらの蛍光
膜層５及び封止樹脂層６は、ＬＥＤランプ等の分野で利
用されているエポキシ樹脂の中に予め蛍光物質を混入し
たものを反射ケース１の中に充填し、その後遠心分離法
によって分離して形成されるものである。エポキシ樹脂
に混入する蛍光物質は、白色発光に変換する場合では、
発光素子３の発光色である青色と補色の関係を持つもの
であればよく、蛍光染料，蛍光顔料，蛍光体などが利用
でき、たとえば（Ｙ，Ｇｄ)3（Ａｌ，Ｇａ)5Ｏ12：Ｃｅ
等が好適である。The phosphor film layer 5 and the encapsulating resin layer 6 are used as a package for protecting the light emitting element 3 while converting the emission wavelength of the blue light emitting element 3 into white light. 1 is formed. The fluorescent film layer 5 and the sealing resin layer 6 are filled in the reflective case 1 with epoxy resin used in the field of LED lamps and the like in which a fluorescent substance is mixed in advance, and then centrifuged. Are formed separately. The fluorescent substance mixed in the epoxy resin is converted to white light emission,
Any material having a complementary color to the blue color of the light-emitting element 3 may be used, and a fluorescent dye, a fluorescent pigment, a fluorescent substance, or the like can be used. For example, (Y, Gd)3 (Al, Ga)5 O12 : Ce
Etc. are preferred.
【００２４】図２は蛍光膜層５と封止樹脂層６からなる
パッケージ構造の形成要領を示す概略図である。FIG. 2 is a schematic diagram showing a procedure for forming a package structure including the fluorescent film layer 5 and the sealing resin layer 6.
【００２５】パッケージの形成工程は、リード２ａ，２
ｂを一体に備えた反射ケース１への発光素子３の実装と
ワイヤ４ａ，４ｂのボンディングの後であり、図２の
（ａ）に示すように水平及び鉛直姿勢に回転操作できる
治具５０の上に搭載固定されている。そして、反射ケー
ス１の内部には、先に述べたような蛍光物質を予め一様
に混入した一次成形樹脂材７をポッティングする。この
一次成形樹脂材７は透明のエポキシ樹脂等のように熱硬
化性のものであればよく、蛍光物質の混入過程から反射
ケース１へのポッティング及び遠心分離までの工程では
粘性を持つ液状である。The process of forming the package includes the steps of forming the leads 2a, 2
After the mounting of the light emitting element 3 and the bonding of the wires 4a and 4b to the reflection case 1 integrally provided with the b, the jig 50 capable of rotating and operating in a horizontal and vertical posture as shown in FIG. Mounted and fixed on top. Then, the primary molding resin material 7 in which the above-mentioned fluorescent substance is uniformly mixed in advance is potted inside the reflection case 1. The primary molding resin material 7 may be a thermosetting material such as a transparent epoxy resin or the like, and is a viscous liquid in the process from the mixing process of the fluorescent substance to the potting to the reflection case 1 and the centrifugal separation. .
【００２６】ポッティング工程の後には、図２の（ｂ）
に示すように治具５０を９０°回転させて搭載面を鉛直
姿勢として遠心分離装置にセットし、搭載面と平行な回
転軸Ａ周りに高速で回転させる。After the potting step, FIG.
As shown in (2), the jig 50 is rotated by 90 °, the mounting surface is set in a vertical posture, set in the centrifugal separator, and rotated at high speed around a rotation axis A parallel to the mounting surface.
【００２７】この高速回転によって、反射ケース１に対
して、図中の矢印Ｆで示す方向に遠心力が作用し、一次
成形樹脂材７にもその負荷が加わる。そして、この一次
成形樹脂材７はエポキシ樹脂の基材に蛍光物質を混入し
たものなので、比重がエポキシ樹脂より大きい蛍光物質
が外側に飛ばされるようになり、反射ケース１の底部側
に蛍光物質のほとんどを含有する蛍光膜層５と蛍光物質
をほとんど含まない封止樹脂層６とに層分離される。す
なわち、一般的なエポキシ樹脂の比重は１．２〜１．３
であるのに対し、たとえば蛍光物質として広く利用され
ている（Ｙ，Ｇｄ)3（Ａｌ，Ｇａ)5Ｏ12；Ｃｅ系の比重
は４．５〜５．５であり、このような比重差によって、
蛍光膜層５と封止樹脂層６とが遠心分離法によって分離
される。Due to this high-speed rotation, a centrifugal force acts on the reflection case 1 in a direction indicated by an arrow F in the figure, and a load is also applied to the primary molding resin material 7. Since the primary molding resin material 7 is obtained by mixing a fluorescent substance into a base material of an epoxy resin, a fluorescent substance having a specific gravity larger than that of the epoxy resin is blown outward, and the fluorescent substance is placed on the bottom side of the reflection case 1. The layer is separated into a fluorescent film layer 5 containing most and a sealing resin layer 6 containing almost no fluorescent substance. That is, the specific gravity of a general epoxy resin is 1.2 to 1.3.
On the other hand, the specific gravity of (Y, Gd)3 (Al, Ga)5 O12 ; Ce, which is widely used as a fluorescent substance, is 4.5 to 5.5, and such a specific gravity difference By
The fluorescent film layer 5 and the sealing resin layer 6 are separated by a centrifugal separation method.
【００２８】蛍光膜層５は発光素子３の全体を覆う厚さ
になるように蛍光物質の含有量を決めることが必要であ
る。そして、ワイヤ４ａ，４ｂが蛍光膜層５と封止樹脂
層６との間に跨がらないようにすることが好ましく、こ
うすることで熱硬化させるときの蛍光膜層５と封止樹脂
層６の熱収縮の差によるワイヤ４ａ，４ｂの断線が防止
される。It is necessary to determine the content of the fluorescent substance so that the fluorescent film layer 5 has a thickness covering the entire light emitting element 3. It is preferable that the wires 4a and 4b do not straddle between the fluorescent film layer 5 and the sealing resin layer 6, so that the fluorescent film layer 5 and the sealing resin layer 6 are thermally cured. Of the wires 4a, 4b due to the difference in thermal contraction of the wires 4a, 4b.
【００２９】このように遠心分離された後には、治具５
０を図２の（ａ）の水平姿勢に戻して加熱乾燥工程に移
し、一次成形樹脂材７を熱硬化させて図１に示す半導体
発光装置が得られる。すなわち、発光素子３の全体が蛍
光膜層５によって被覆されるとともに、蛍光膜層５の上
には透明の封止樹脂層６が一体に形成され、発光素子３
からの青色発光は蛍光膜層５によって波長変換されて封
止樹脂層６から白色発光として放出される。After the centrifugation, the jig 5
0 is returned to the horizontal posture of FIG. 2A, and the heating and drying process is performed. The primary molding resin material 7 is thermally cured to obtain the semiconductor light emitting device shown in FIG. That is, the entire light emitting element 3 is covered with the fluorescent film layer 5, and a transparent sealing resin layer 6 is integrally formed on the fluorescent film layer 5.
The blue light emitted from is converted into a wavelength by the fluorescent film layer 5 and emitted from the sealing resin layer 6 as white light.
【００３０】本発明においては、蛍光物質を混入させた
一次成形樹脂材７を反射ケース１にポッティングした後
に遠心分離によって蛍光膜層５と封止樹脂層６とに層分
離するので、従来例のように二重モールドの工程が不要
となり、工程数が削減される。また、蛍光膜層５は蛍光
物質だけが集合したものではなく、蛍光物質とともにエ
ポキシ樹脂を伴って形成されるので、蛍光膜層５と封止
樹脂層６との境界も含めてエポキシ樹脂が生地のように
連なる。したがって、二重モールドする場合に比べると
蛍光膜層５と封止樹脂層６との間には性状が異なる樹脂
どうしのような界面に相当するものがなく、これらの蛍
光膜層５と封止樹脂層６との間の層の剥離を生じること
がない。その結果、発光素子３からの発光の歪みや発光
輝度の低下を招くことがなくなる。In the present invention, the primary molding resin material 7 mixed with the fluorescent substance is potted on the reflection case 1 and then separated into the fluorescent film layer 5 and the sealing resin layer 6 by centrifugal separation. As described above, the double molding process is not required, and the number of processes is reduced. Further, since the fluorescent film layer 5 is not formed of only the fluorescent substance but is formed together with the fluorescent substance and the epoxy resin, the epoxy resin including the boundary between the fluorescent film layer 5 and the encapsulating resin layer 6 is made of a material. Like this. Therefore, there is no equivalent between the fluorescent film layer 5 and the encapsulating resin layer 6 as compared with the case where the fluorescent film layer 5 and the encapsulating resin layer 6 are different from each other. The layer does not peel off from the resin layer 6. As a result, distortion of light emission from the light emitting element 3 and a decrease in light emission luminance do not occur.
【００３１】図３は別の例を示す半導体発光素子であっ
て、同図の（ａ）は反射ケースの中に一次成形樹脂材を
ポッティングしたときの概略縦断面図、同図の（ｂ）は
遠心分離した後の最終製品の概略縦断面図、同図（ｃ）
は同図（ｂ）の概略平面図である。なお、図１の例と比
較して反射ケースやリードの形状は相違するが、同じ機
能を持つ部材なので、同一の構成部材については先の図
１の例に付したものと同じ符号で指示し、その詳細な説
明は省略する。FIG. 3 shows another example of a semiconductor light emitting device. FIG. 3A is a schematic longitudinal sectional view when a primary molding resin material is potted in a reflection case, and FIG. Is a schematic longitudinal sectional view of the final product after centrifugation, and FIG.
3 is a schematic plan view of FIG. Although the shapes of the reflection case and the lead are different from those of the example of FIG. 1, since they are members having the same function, the same components are designated by the same reference numerals as those in the example of FIG. , And a detailed description thereof will be omitted.
【００３２】図３において、リード２ａ，２ｂは反射ケ
ース１の内部から下面側に沿う断面形状を持ち、絶縁性
の基板３ａを持つ発光素子３はリード２ａの上ではなく
て反射ケース１の底面に搭載されている。この２点だけ
が先の例との構成上での違いであり、同図（ａ）での一
次成形樹脂材７のポッティング後には、図２で示した工
程によって遠心分離することによって、反射ケース１の
中に蛍光膜層５と封止樹脂層６とが分離して形成され
る。In FIG. 3, the leads 2a and 2b have a cross-sectional shape extending from the inside of the reflection case 1 to the lower surface, and the light emitting element 3 having the insulating substrate 3a is not on the leads 2a but on the bottom surface of the reflection case 1. It is installed in. These two points are the only differences in the configuration from the previous example. After the potting of the primary molding resin material 7 in FIG. 3A, the reflection case is centrifuged by the process shown in FIG. The fluorescent film layer 5 and the sealing resin layer 6 are separately formed in the substrate 1.
【００３３】この図３の例でも、二重モールドすること
なく工程数を削減した製造が可能であり、蛍光膜層５と
封止樹脂層６との間の剥離もないので、高い発光輝度の
半導体発光装置が得られる。In the example shown in FIG. 3, the number of steps can be reduced without performing double molding, and there is no peeling between the fluorescent film layer 5 and the sealing resin layer 6. A semiconductor light emitting device is obtained.
【００３４】図４は砲弾型のパッケージを持つＬＥＤラ
ンプを形成する工程図、図５は得られた製品の概略図で
あり、工程について以下に説明する。FIG. 4 is a process diagram for forming an LED lamp having a shell type package, and FIG. 5 is a schematic diagram of the obtained product. The process will be described below.
【００３５】図４の（ａ）において、パッケージを形成
するための注入型５１を予め用意しておき、この注入型
５１に一次成形樹脂材８をポッティングする。一次成形
樹脂材８は先の例と同様にエポキシ樹脂の中に蛍光物質
を一様に混入した熱硬化性のものである。そして、注入
型５１を図４の（ａ）において時計方向に９０°回転さ
せた姿勢として図２の（ｂ）で説明した遠心分離を実行
することで、図４の（ｂ）に示すように、注入型５１の
底部側に蛍光膜層９が偏って集合しその上側にエポキシ
樹脂による封止樹脂層１０が層分離してそれぞれ形成さ
れる。In FIG. 4A, an injection mold 51 for forming a package is prepared in advance, and the primary molding resin material 8 is potted on the injection mold 51. The primary molding resin material 8 is a thermosetting material in which a fluorescent substance is uniformly mixed in an epoxy resin as in the previous example. Then, the injection mold 51 is rotated 90 ° in the clockwise direction in FIG. 4A and the centrifugal separation described in FIG. 2B is performed to execute the centrifugation as shown in FIG. 4B. On the bottom side of the injection mold 51, the fluorescent film layer 9 is biased and gathered, and on the upper side thereof, the sealing resin layer 10 made of epoxy resin is separately formed.
【００３６】次いで、液状の状態にある封止樹脂層１０
の中にリードフレーム１１を差し込み、この後に加熱乾
燥させて蛍光膜層９及び封止樹脂層１０を硬化させてリ
ードフレーム１１を一体に連結する。リードフレーム１
１は普通に用いられる二股状のもので、一方のリード１
１ａにＧａＮ系化合物半導体を利用した青色発光の発光
素子１２を搭載するとともにワイヤ１３ａ，１３ｂによ
ってこの発光素子１２とリード１１ａ，１１ｂとの間を
ボンディングしたものである。Next, the sealing resin layer 10 in a liquid state is
Then, the lead frame 11 is inserted into the inside, and then heated and dried to cure the fluorescent film layer 9 and the sealing resin layer 10 to connect the lead frame 11 integrally. Lead frame 1
1 is a commonly used bifurcated one, and one of the leads 1
A light emitting element 12 for emitting blue light using a GaN-based compound semiconductor is mounted on 1a, and the light emitting element 12 and leads 11a, 11b are bonded by wires 13a, 13b.
【００３７】加熱乾燥工程の後には、注入型５１から離
型することで、図５に示す砲弾型のＬＥＤランプが得ら
れる。このＬＥＤランプでは、発光素子１２の周りが封
止樹脂層１０によって被覆されているが、発光素子１２
の発光方向を向く先端側には蛍光膜層９が形成されてい
るので、発光素子１２からの青色発光はこの蛍光膜層９
を抜けるときに波長変換されて白色光として発光させる
ことができる。After the heating and drying step, the mold is released from the injection mold 51 to obtain a bullet-shaped LED lamp shown in FIG. In this LED lamp, the periphery of the light emitting element 12 is covered with the sealing resin layer 10.
Since the fluorescent film layer 9 is formed on the front end side facing the light emitting direction, blue light emitted from the light emitting element 12 emits blue light from the fluorescent film layer 9.
When the light exits, the wavelength is converted and the light can be emitted as white light.
【００３８】このように、蛍光膜層９と封止樹脂層１０
とによって発光素子１２に対するパッケージを形成する
ＬＥＤランプ型であっても、二重モールド工程を必要と
しないので工程数が削減される。また、蛍光膜層９と封
止樹脂層１０との間にエポキシ樹脂が生地のように連な
るので、これらの蛍光膜層９と封止樹脂層１０との間に
剥離がなく、発光素子３からの発光を効率よく取り出す
ことができる。As described above, the fluorescent film layer 9 and the sealing resin layer 10
Thus, even if the LED lamp type forms a package for the light emitting element 12, the number of steps is reduced because a double molding step is not required. In addition, since the epoxy resin continues like a cloth between the fluorescent film layer 9 and the sealing resin layer 10, there is no separation between the fluorescent film layer 9 and the sealing resin layer 10, and Can be efficiently extracted.
【００３９】なお、以上の説明では、青色発光の発光素
子を白色発光に変える例としたが、赤や緑の発光素子の
それぞれの発光を蛍光物質の特性によって様々な発光色
に変える構成とすることもできる。In the above description, the light emitting element emitting blue light is changed to white light. However, the light emission of each of the red and green light emitting elements is changed to various light emitting colors depending on the characteristics of the fluorescent substance. You can also.
【００４０】[0040]
【発明の効果】本発明では、発光素子の発光色を波長変
換するための蛍光膜層と封止樹脂層との間を一次成形樹
脂材が生地のようにして連ねて形成されるので、これら
の層の間の剥離がなく、発光素子からの発光輝度を低下
させることなく波長変換した光を効率的に放出すること
ができる。また、製造方法においては、一次成形樹脂材
のポッティングの後に遠心分離を加えるだけで蛍光膜層
と封止樹脂層とを層分離でき、従来の二重モールドする
場合に比べると工程数が削減され、生産性の向上が図れ
る。According to the present invention, the primary molding resin material is continuously formed between the fluorescent film layer for converting the emission color of the light emitting element to the wavelength and the sealing resin layer like a cloth. And the wavelength-converted light can be efficiently emitted without lowering the luminance of light emitted from the light emitting element. Also, in the manufacturing method, the phosphor film layer and the sealing resin layer can be separated by simply centrifuging after the potting of the primary molding resin material, and the number of steps is reduced as compared with the conventional double molding. And productivity can be improved.
【図１】本発明の製造方法によって得た反射ケース型の
半導体発光装置の一例を示す要部の概略縦断面図FIG. 1 is a schematic longitudinal sectional view of an essential part showing an example of a reflective case type semiconductor light emitting device obtained by a manufacturing method of the present invention.
【図２】本発明の製造方法における工程を示す概略図で
あって、（ａ）は反射ケースへの一次成形樹脂材のポッ
ティング工程を示す図 （ｂ）は遠心分離工程を示す図FIGS. 2A and 2B are schematic views showing steps in the manufacturing method of the present invention, wherein FIG. 2A is a view showing a potting step of a primary molding resin material to a reflection case, and FIG.
【図３】本発明の製造方法により得られる半導体発光装
置の別の例を示す概略図FIG. 3 is a schematic view showing another example of the semiconductor light emitting device obtained by the manufacturing method of the present invention.
【図４】砲弾型のＬＥＤランプの製造工程の例であっ
て、（ａ）は注入型への一次成形樹脂材の注入工程を示
す図 （ｂ）は遠心分離工程を示す図 （ｃ）はリードフレームの接合工程を示す図を示す図4A and 4B show an example of a manufacturing process of a bullet-type LED lamp, wherein FIG. 4A shows a process of injecting a primary molding resin material into a casting mold; FIG. 4B shows a process of centrifugal separation; The figure which shows the figure which shows the joining process of a lead frame.
【図５】図４の工程によって得られたＬＥＤランプ型の
半導体発光装置の概略図5 is a schematic diagram of an LED lamp type semiconductor light emitting device obtained by the process of FIG.
１ 反射ケース ２ａ，２ｂ リード ３ 発光素子 ４ａ，４ｂ ワイヤ ５ 蛍光膜層 ６ 封止樹脂層 ７ 一次成形樹脂材 ８ 一次成形樹脂材 ９ 蛍光膜層 １０ 封止樹脂層 １１ リードフレーム １１ａ，１１ｂ リード １２ 発光素子 １３ａ，１３ｂ ワイヤ ５０ 治具 ５１ 注入型 DESCRIPTION OF SYMBOLS 1 Reflective case 2a, 2b Lead 3 Light emitting element 4a, 4b Wire 5 Fluorescent film layer 6 Sealing resin layer 7 Primary molding resin material 8 Primary molding resin material 9 Fluorescent film layer 10 Sealing resin layer 11 Lead frame 11a, 11b Lead 12 Light emitting element 13a, 13b Wire 50 Jig 51 Injection type
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 4M109 AA02 BA01 CA01 CA02 DB10 EA02 EB12 EC11 EE12 GA01 5F041 AA42 AA43 CA40 DA36 DA44 DA55 DA58 DA91 DB01 DB03 EE25 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4M109 AA02 BA01 CA01 CA02 DB10 EA02 EB12 EC11 EE12 GA01 5F041 AA42 AA43 CA40 DA36 DA44 DA55 DA58 DA91 DB01 DB03 EE25
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33715298AJP3775081B2 (en) | 1998-11-27 | 1998-11-27 | Semiconductor light emitting device |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33715298AJP3775081B2 (en) | 1998-11-27 | 1998-11-27 | Semiconductor light emitting device |
| Publication Number | Publication Date |
|---|---|
| JP2000164937Atrue JP2000164937A (en) | 2000-06-16 |
| JP3775081B2 JP3775081B2 (en) | 2006-05-17 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33715298AExpired - Fee RelatedJP3775081B2 (en) | 1998-11-27 | 1998-11-27 | Semiconductor light emitting device |
| Country | Link |
|---|---|
| JP (1) | JP3775081B2 (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002094128A (en)* | 2000-09-20 | 2002-03-29 | Stanley Electric Co Ltd | Light emitting diode and method of manufacturing the same |
| KR20030083452A (en)* | 2002-04-23 | 2003-10-30 | 서울반도체 주식회사 | High Flux Light-emitting Diode and Method of Manufacturing the same |
| KR100576892B1 (en)* | 2001-03-30 | 2006-05-03 | 스미토모덴키고교가부시키가이샤 | Light emitting device |
| JP2007027801A (en)* | 2006-11-01 | 2007-02-01 | Sanyo Electric Co Ltd | Led display device and manufacturing method thereof |
| JP2008311477A (en)* | 2007-06-15 | 2008-12-25 | Minami Kk | Led display and method of manufacturing the same |
| JP2009147343A (en)* | 2007-12-14 | 2009-07-02 | Cree Inc | Distribution of phosphors using centrifugal force in LED lamps |
| JP2010135763A (en)* | 2008-11-05 | 2010-06-17 | Toshiba Corp | Apparatus for manufacturing led device, method for manufacturing the same, and led device |
| US7910940B2 (en) | 2005-08-05 | 2011-03-22 | Panasonic Corporation | Semiconductor light-emitting device |
| JP2012114416A (en)* | 2010-11-05 | 2012-06-14 | Nichia Chem Ind Ltd | Light-emitting device and method of manufacturing the same |
| CN103178188A (en)* | 2011-12-21 | 2013-06-26 | 四川柏狮光电技术有限公司 | Packaging process of white light light-emitting diode (LED) |
| US8778601B2 (en) | 2010-03-05 | 2014-07-15 | Rohm and Haas Electronic Materials | Methods of forming photolithographic patterns |
| US8878219B2 (en) | 2008-01-11 | 2014-11-04 | Cree, Inc. | Flip-chip phosphor coating method and devices fabricated utilizing method |
| US9024349B2 (en) | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
| US9041285B2 (en) | 2007-12-14 | 2015-05-26 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
| US9093616B2 (en) | 2003-09-18 | 2015-07-28 | Cree, Inc. | Molded chip fabrication method and apparatus |
| US9159888B2 (en) | 2007-01-22 | 2015-10-13 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
| US9166126B2 (en) | 2011-01-31 | 2015-10-20 | Cree, Inc. | Conformally coated light emitting devices and methods for providing the same |
| US9263647B2 (en) | 2012-06-13 | 2016-02-16 | Everlight Electronics Co., Ltd. | Light emitting diode package structure and manufacturing method thereof |
| WO2020003789A1 (en)* | 2018-06-29 | 2020-01-02 | 日亜化学工業株式会社 | Method for producing light emitting device, and light emitting device |
| JP2020010013A (en)* | 2018-06-29 | 2020-01-16 | 日亜化学工業株式会社 | Manufacturing method of light-emitting device and light-emitting device |
| US10546846B2 (en) | 2010-07-23 | 2020-01-28 | Cree, Inc. | Light transmission control for masking appearance of solid state light sources |
| JP2020053639A (en)* | 2018-09-28 | 2020-04-02 | 日亜化学工業株式会社 | Light-emitting device and method of manufacturing the same |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5969936A (en)* | 1982-10-15 | 1984-04-20 | Sharp Corp | Manufacturing method of semiconductor device |
| JPH07297451A (en)* | 1994-04-21 | 1995-11-10 | Toshiba Corp | Semiconductor device |
| JPH09153645A (en)* | 1995-11-30 | 1997-06-10 | Toyoda Gosei Co Ltd | Group III nitride semiconductor light emitting device |
| JPH10261821A (en)* | 1997-01-15 | 1998-09-29 | Toshiba Corp | Semiconductor light emitting device and method of manufacturing the same |
| JPH1146019A (en)* | 1997-07-28 | 1999-02-16 | Nichia Chem Ind Ltd | Method of forming light emitting diode and LED display |
| JPH1187778A (en)* | 1997-09-02 | 1999-03-30 | Toshiba Corp | Semiconductor light emitting element, semiconductor light emitting device and method for manufacturing the same |
| JP2000049389A (en)* | 1998-07-27 | 2000-02-18 | Sanken Electric Co Ltd | Semiconductor light emitting device and manufacture thereof |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5969936A (en)* | 1982-10-15 | 1984-04-20 | Sharp Corp | Manufacturing method of semiconductor device |
| JPH07297451A (en)* | 1994-04-21 | 1995-11-10 | Toshiba Corp | Semiconductor device |
| JPH09153645A (en)* | 1995-11-30 | 1997-06-10 | Toyoda Gosei Co Ltd | Group III nitride semiconductor light emitting device |
| JPH10261821A (en)* | 1997-01-15 | 1998-09-29 | Toshiba Corp | Semiconductor light emitting device and method of manufacturing the same |
| JPH1146019A (en)* | 1997-07-28 | 1999-02-16 | Nichia Chem Ind Ltd | Method of forming light emitting diode and LED display |
| JPH1187778A (en)* | 1997-09-02 | 1999-03-30 | Toshiba Corp | Semiconductor light emitting element, semiconductor light emitting device and method for manufacturing the same |
| JP2000049389A (en)* | 1998-07-27 | 2000-02-18 | Sanken Electric Co Ltd | Semiconductor light emitting device and manufacture thereof |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002094128A (en)* | 2000-09-20 | 2002-03-29 | Stanley Electric Co Ltd | Light emitting diode and method of manufacturing the same |
| KR100576892B1 (en)* | 2001-03-30 | 2006-05-03 | 스미토모덴키고교가부시키가이샤 | Light emitting device |
| KR20030083452A (en)* | 2002-04-23 | 2003-10-30 | 서울반도체 주식회사 | High Flux Light-emitting Diode and Method of Manufacturing the same |
| US10546978B2 (en) | 2003-09-18 | 2020-01-28 | Cree, Inc. | Molded chip fabrication method and apparatus |
| US9093616B2 (en) | 2003-09-18 | 2015-07-28 | Cree, Inc. | Molded chip fabrication method and apparatus |
| US10164158B2 (en) | 2003-09-18 | 2018-12-25 | Cree, Inc. | Molded chip fabrication method and apparatus |
| US9105817B2 (en) | 2003-09-18 | 2015-08-11 | Cree, Inc. | Molded chip fabrication method and apparatus |
| US7910940B2 (en) | 2005-08-05 | 2011-03-22 | Panasonic Corporation | Semiconductor light-emitting device |
| JP2007027801A (en)* | 2006-11-01 | 2007-02-01 | Sanyo Electric Co Ltd | Led display device and manufacturing method thereof |
| US9159888B2 (en) | 2007-01-22 | 2015-10-13 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
| US9024349B2 (en) | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
| JP2008311477A (en)* | 2007-06-15 | 2008-12-25 | Minami Kk | Led display and method of manufacturing the same |
| EP2071636B1 (en)* | 2007-12-14 | 2016-02-17 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
| US8167674B2 (en)* | 2007-12-14 | 2012-05-01 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
| JP2009147343A (en)* | 2007-12-14 | 2009-07-02 | Cree Inc | Distribution of phosphors using centrifugal force in LED lamps |
| US9041285B2 (en) | 2007-12-14 | 2015-05-26 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
| US8878219B2 (en) | 2008-01-11 | 2014-11-04 | Cree, Inc. | Flip-chip phosphor coating method and devices fabricated utilizing method |
| JP2010135763A (en)* | 2008-11-05 | 2010-06-17 | Toshiba Corp | Apparatus for manufacturing led device, method for manufacturing the same, and led device |
| US8778601B2 (en) | 2010-03-05 | 2014-07-15 | Rohm and Haas Electronic Materials | Methods of forming photolithographic patterns |
| US10546846B2 (en) | 2010-07-23 | 2020-01-28 | Cree, Inc. | Light transmission control for masking appearance of solid state light sources |
| JP2012114416A (en)* | 2010-11-05 | 2012-06-14 | Nichia Chem Ind Ltd | Light-emitting device and method of manufacturing the same |
| US8471454B2 (en) | 2010-11-05 | 2013-06-25 | Nichia Corporation | Method of manufacturing light emitting device |
| US8827759B2 (en) | 2010-11-05 | 2014-09-09 | Nichia Corporation | Method of manufacturing light emitting device |
| US9166126B2 (en) | 2011-01-31 | 2015-10-20 | Cree, Inc. | Conformally coated light emitting devices and methods for providing the same |
| CN103178188A (en)* | 2011-12-21 | 2013-06-26 | 四川柏狮光电技术有限公司 | Packaging process of white light light-emitting diode (LED) |
| US9263647B2 (en) | 2012-06-13 | 2016-02-16 | Everlight Electronics Co., Ltd. | Light emitting diode package structure and manufacturing method thereof |
| WO2020003789A1 (en)* | 2018-06-29 | 2020-01-02 | 日亜化学工業株式会社 | Method for producing light emitting device, and light emitting device |
| JP2020010013A (en)* | 2018-06-29 | 2020-01-16 | 日亜化学工業株式会社 | Manufacturing method of light-emitting device and light-emitting device |
| JP2020053639A (en)* | 2018-09-28 | 2020-04-02 | 日亜化学工業株式会社 | Light-emitting device and method of manufacturing the same |
| JP7372512B2 (en) | 2018-09-28 | 2023-11-01 | 日亜化学工業株式会社 | Light-emitting device and method for manufacturing the light-emitting device |
| Publication number | Publication date |
|---|---|
| JP3775081B2 (en) | 2006-05-17 |
| Publication | Publication Date | Title |
|---|---|---|
| JP3775081B2 (en) | Semiconductor light emitting device | |
| US8507299B2 (en) | Light emitting diode package and manufacturing method thereof | |
| US8164102B2 (en) | Semiconductor light emitting device | |
| KR101766299B1 (en) | Light emitting device package and method of manufacturing the light emitting device package | |
| US20070063214A1 (en) | Light emitting diode package and method for manufacturing the same | |
| JP5470627B2 (en) | Light emitting device package and manufacturing method thereof | |
| JP2000208822A (en) | Semiconductor light emitting device | |
| KR20010072893A (en) | Light emitting diode | |
| JP4045710B2 (en) | Manufacturing method of semiconductor light emitting device | |
| JP3725413B2 (en) | Semiconductor light emitting device | |
| EP1900040B1 (en) | Light emitting diode and method of fabricating the same | |
| JP4763122B2 (en) | Light emitting diode and manufacturing method thereof | |
| JP2001298216A (en) | Surface mount type semiconductor light emitting device | |
| KR20080055549A (en) | Manufacturing method of LED package | |
| JP2001177157A (en) | Semiconductor light emitting device | |
| KR101186648B1 (en) | Light emitting diode package and method for fabricating the same diode | |
| KR100849828B1 (en) | Light emitting diode package | |
| JP2000150966A (en) | Semiconductor light emitting device and method of manufacturing the same | |
| US20140134766A1 (en) | Method of manufacturing light emitting device package | |
| JP2003168828A (en) | Surface mounting light emitting diode and its producing method | |
| KR100634189B1 (en) | Thin film type light emitting diode package and manufacturing method thereof | |
| US8981399B2 (en) | Method of fabricating light emitting diode package with surface treated resin encapsulant and the package fabricated by the method | |
| JP2007324630A (en) | Semiconductor light emitting device | |
| CN102509761A (en) | Chip package | |
| KR100610272B1 (en) | Multi-color light emitting diode structure with wide direct angle |
| Date | Code | Title | Description |
|---|---|---|---|
| A977 | Report on retrieval | Free format text:JAPANESE INTERMEDIATE CODE: A971007 Effective date:20050614 | |
| A131 | Notification of reasons for refusal | Free format text:JAPANESE INTERMEDIATE CODE: A131 Effective date:20050621 | |
| RD01 | Notification of change of attorney | Free format text:JAPANESE INTERMEDIATE CODE: A7421 Effective date:20050629 | |
| A521 | Written amendment | Free format text:JAPANESE INTERMEDIATE CODE: A523 Effective date:20050804 | |
| A02 | Decision of refusal | Free format text:JAPANESE INTERMEDIATE CODE: A02 Effective date:20051025 | |
| A521 | Written amendment | Free format text:JAPANESE INTERMEDIATE CODE: A523 Effective date:20051222 | |
| A911 | Transfer to examiner for re-examination before appeal (zenchi) | Free format text:JAPANESE INTERMEDIATE CODE: A911 Effective date:20060106 | |
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) | Free format text:JAPANESE INTERMEDIATE CODE: A01 Effective date:20060131 | |
| A61 | First payment of annual fees (during grant procedure) | Free format text:JAPANESE INTERMEDIATE CODE: A61 Effective date:20060213 | |
| FPAY | Renewal fee payment (event date is renewal date of database) | Free format text:PAYMENT UNTIL: 20100303 Year of fee payment:4 | |
| FPAY | Renewal fee payment (event date is renewal date of database) | Free format text:PAYMENT UNTIL: 20110303 Year of fee payment:5 | |
| FPAY | Renewal fee payment (event date is renewal date of database) | Free format text:PAYMENT UNTIL: 20120303 Year of fee payment:6 | |
| FPAY | Renewal fee payment (event date is renewal date of database) | Free format text:PAYMENT UNTIL: 20130303 Year of fee payment:7 | |
| FPAY | Renewal fee payment (event date is renewal date of database) | Free format text:PAYMENT UNTIL: 20130303 Year of fee payment:7 | |
| FPAY | Renewal fee payment (event date is renewal date of database) | Free format text:PAYMENT UNTIL: 20140303 Year of fee payment:8 | |
| LAPS | Cancellation because of no payment of annual fees |