【０００１】[0001]
【発明の属する技術分野】本発明は、自動車電話及び携
帯電話等の移動体無線機器に内蔵される周波数帯域フィ
ルタであって、不平衡平衡変換の弾性表面波フィルタに
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a frequency band filter incorporated in mobile radio equipment such as a mobile phone and a mobile phone, and more particularly to a surface acoustic wave filter having an unbalanced balanced conversion.
【０００２】[0002]
【従来の技術】従来の弾性表面波（Surface Acoustic W
ave で、以下、SAW と略す）装置の基本構成は、一対の
櫛歯状電極（Inter Digital Transducerで、以下、IDT
電極と略す）を複数若しくは１つ載置し、IDT 電極から
励起されるのSAW の伝搬路上に、SAW を効率良く共振さ
せるための反射器が配置される構造となっている。2. Description of the Related Art Conventional surface acoustic waves (Surface Acoustic W)
ave (hereinafter abbreviated as SAW) is basically composed of a pair of interdigital transducers (Inter Digital Transducer, hereinafter IDT).
A plurality of or one electrode is abbreviated, and a reflector for efficiently resonating the SAW is disposed on the propagation path of the SAW excited from the IDT electrode.
【０００３】IDT 電極及び反射器は、例えば36°Y カッ
トX 伝搬タンタル酸リチウム単結晶等からなる圧電基板
上に、蒸着法、スパッタ法等によりAl、Al-Cu 合金等の
導電物がフォトリソグラフィ法により微細な電極となる
ようにパターンを形成し、作製される。[0003] IDT electrodes and reflectors are formed by depositing a conductive material such as Al or an Al-Cu alloy on a piezoelectric substrate made of, for example, a 36 ° Y-cut X-propagating lithium tantalate single crystal or the like by vapor deposition or sputtering. It is manufactured by forming a pattern so as to be a fine electrode by a method.
【０００４】近年、電波を利用し通信を行なう電子機器
用の帯域通過フィルタ等の周波数フィルタ（以下、フィ
ルタという）、遅延線、発信器等の電子部品として、多
くのSAW 共振子やSAW フィルタが用いられている。特
に、移動体通信分野において、携帯電話等の携帯端末装
置のRF（Radio Frequency ：無線周波数あるいは高周
波）ブロック及び（Intermediate Frequency：中間周波
数）ブロックのフィルタとして多用されており、通過帯
域の平滑な通過特性に対する要望が強い。In recent years, many SAW resonators and SAW filters have been used as electronic components such as a frequency filter (hereinafter, referred to as a filter) such as a band-pass filter for electronic equipment performing communication using radio waves, a delay line, and a transmitter. Used. In particular, in the field of mobile communication, it is frequently used as a filter of an RF (Radio Frequency: radio frequency or high frequency) block and an (Intermediate Frequency) block of a portable terminal device such as a mobile phone, and a pass band having a smooth pass band. Strong demand for characteristics.
【０００５】また、この移動体通信機器等の小型・軽量
化及び低コスト化のための使用部品点数削減により、SA
W フィルタに新たな機能の付加が要求されている。その
一つに、受送信号の周波数のダウンコンバート及びアッ
プコンバートを行なうミキサICの平衡入出力端に、不平
衡入力−平衡出力、平衡入力−不平衡出力の電気接続が
できるSAW フィルタ（以下、平衡型SAW フィルタとい
う）が望まれている。[0005] Further, by reducing the number of parts used for reducing the size and weight of the mobile communication device and reducing the cost, SA
New functions are required to be added to W filters. One of them is a SAW filter (hereinafter, referred to as a “balanced input-balanced output” or “balanced input-unbalanced output”) that can be electrically connected to the balanced input / output terminal of the mixer IC that performs down-conversion and up-conversion of the frequency of the received signal. (Referred to as a balanced SAW filter).
【０００６】また、前記ミキサICにより平衡端で終端さ
れる公称抵抗値は変化するため、この抵抗値に合わせて
平衡型SAW フィルタの平衡端接続抵抗を設計する必要が
ある。Since the nominal resistance terminated at the balanced end by the mixer IC changes, it is necessary to design the balanced-end connection resistance of the balanced SAW filter in accordance with this resistance.
【０００７】従来のSAW フィルタの場合、不平衡入力−
不平衡出力しかできない接続であるため（例えば、特開
平０５−１８３３８０号公報を参照）、SAW フィルタと
ミキサICの間に、バランと呼ばれる平衡−不平衡変換器
を介している。In the case of a conventional SAW filter, an unbalanced input
Since the connection allows only unbalanced output (see, for example, Japanese Patent Application Laid-Open No. 05-183380), a balanced-unbalanced converter called a balun is interposed between the SAW filter and the mixer IC.
【０００８】また、上記平衡型SAW フィルタとして、伝
搬方向に対してIDT 電極指垂直に並べたIDT 電極を２つ
または３つ並べ、それらの両側に前記反射器を構成させ
た共振器型SAW フィルタでも平衡入出力対応できるが、
この共振器構造ではSAW のエネルギーが共振器の中に蓄
積して、特にRFブロックの帯域フィルタを作製するた
め、IDT 電極の櫛歯のピッチを小さくし、かつRFブロッ
クに印加される電力をかけた場合、電極のマイグレーシ
ョンによりフィルタ特性が劣化することがあり、部品の
信頼性上問題である。[0008] Further, as the above-mentioned balanced SAW filter, a resonator type SAW filter in which two or three IDT electrodes arranged perpendicular to the IDT electrode fingers with respect to the propagation direction are arranged, and the reflector is formed on both sides thereof. But it can support balanced input / output,
In this resonator structure, the energy of the SAW accumulates in the resonator, and in particular, the pitch of the comb teeth of the IDT electrode is reduced, and the power applied to the RF block is applied in order to manufacture a bandpass filter for the RF block. In such a case, the filter characteristics may be degraded due to migration of the electrodes, which is a problem in the reliability of components.
【０００９】[0009]
【発明が解決しようとする課題】上記問題点を解消する
ため、まずSAW フィルタに印加される電力を分散させる
ため、多数の共振子を用いて構成させた複合共振子型SA
W フィルタ構造と、平衡型SAW フィルタとして、IDT 電
極を入出力１つ置きに載置したマルチ電極（Inter-degi
tated Inter Digital Transducerで、以下、IIDT電極と
略す）を複合させて構成し、電圧を分散させ耐電力性を
向上させる必要がある。SUMMARY OF THE INVENTION In order to solve the above problem, first, a composite resonator type SA constituted by using a large number of resonators in order to disperse the power applied to the SAW filter.
A multi-electrode (Inter-degi) with a W filter structure and an IDT electrode placed every other input and output as a balanced SAW filter
It is necessary to improve the power durability by distributing the voltage to improve the power durability.
【００１０】また、IIDT電極はIDT 電極の構成が多数で
あるため、従来から行われていたAｌワイヤやＡｕワイ
ヤによる配線が複雑であり、このワイヤとＩＩＤＴ電極
を接続させるパッド部も多大な面積が必要である。Further, since the IIDT electrode has a large number of IDT electrodes, the wiring using the Al wire or Au wire, which has been conventionally performed, is complicated, and the pad portion for connecting this wire to the IIDT electrode has a large area. is necessary.
【００１１】従って、本発明は上記事情に鑑みて、電力
に対して信頼性があり、ワイヤ接続の乱雑さを解消し、
通過帯域の平滑な通過特性である弾性表面波フィルタを
提供することを目的とする。Accordingly, the present invention has been made in view of the above circumstances, and has a high reliability with respect to electric power, eliminates clutter of wire connections,
It is an object of the present invention to provide a surface acoustic wave filter having a smooth passband characteristic.
【００１２】[0012]
【課題を解決するための手段】上記課題を解決するた
め、本発明の弾性表面波フィルタは、複数の入力用ＩＤ
Ｔ電極と複数の出力用ＩＤＴ電極とを交互に並設したＩ
ＩＤＴ電極の入力又は出力側に、複数のＩＤＴ電極から
成る弾性表面波共振子どうしを対称格子状に接続したラ
ティス型回路又は複数のＩＤＴ電極から成る弾性表面波
共振子を梯子状に接続したラダー型回路に接続して成
る。In order to solve the above-mentioned problems, a surface acoustic wave filter according to the present invention comprises a plurality of input IDs.
I in which T electrodes and a plurality of output IDT electrodes are alternately arranged.
A lattice type circuit in which surface acoustic wave resonators composed of a plurality of IDT electrodes are connected in a symmetrical lattice shape on the input or output side of the IDT electrode, or a ladder in which surface acoustic wave resonators composed of a plurality of IDT electrodes are connected in a ladder shape. It is connected to a mold circuit.
【００１３】また、特にＩＤＴ電極の電極ピッチの平均
値λと電極膜厚ｈとの関係が下記式を満足することを特
徴とする請求項１に記載の弾性表面波フィルタ。The surface acoustic wave filter according to claim 1, wherein the relationship between the average value λ of the electrode pitch of the IDT electrode and the electrode thickness h satisfies the following expression.
【００１４】６．５％ ＜ ｈ／λ ＜ １０．５％6.5% <h / λ <10.5%
【００１５】[0015]
【発明の実施の形態】本発明に係るSAW フィルタの実施
形態を図面に基づき詳細に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a SAW filter according to the present invention will be described in detail with reference to the drawings.
【００１６】弾性表面波フィルタＳの電極構成を図１に
示す。１は圧電基板であり、２はIIDT電極であり（入力
用ＩＤＴ電極２ａと出力用ＩＤＴ電極とが交互に並設し
て成る）、３は格子型（ラティス型回路）に配置したID
T 電極である。４は入力電極は４であり、５は接地電極
である。この入力電極４、接地電極５にRF電気信号を加
え、シリカ，窒化シリコン，アルミナ等の絶縁薄膜８で
絶縁され立体配線された構造を持つIIDT電極２に電気信
号が加えられる。FIG. 1 shows an electrode configuration of the surface acoustic wave filter S. 1 is a piezoelectric substrate, 2 is an IIDT electrode (an input IDT electrode 2a and an output IDT electrode are alternately arranged side by side), and 3 is an ID arranged in a lattice type (lattice type circuit).
T electrode. 4 is an input electrode and 5 is a ground electrode. An RF electric signal is applied to the input electrode 4 and the ground electrode 5, and an electric signal is applied to the IIDT electrode 2 which is insulated by an insulating thin film 8 of silica, silicon nitride, alumina or the like and has a three-dimensional wiring structure.
【００１７】ここで、図１におけるＡ−Ａ’，Ｂ−
Ｂ’，Ｃ−Ｃ’線断面図を図２（ａ），（ｂ），（ｃ）
にそれぞれ示す。Here, AA ', B- in FIG.
2 (a), 2 (b) and 2 (c) are sectional views taken along the lines B 'and CC'.
Are shown below.
【００１８】上記入力信号は、IIDT電極２のIDT 電極に
てSAW に変換され、入力用IDT 電極の両側からSAW が伝
搬し、IIDT電極２の出力側の電極に送られる。送られた
SAWはIIDT電極２の出力用IDT 電極にて、SAW から電気
信号に変換される。The input signal is converted into SAW by the IDT electrode of the IIDT electrode 2, the SAW propagates from both sides of the input IDT electrode, and is sent to the output electrode of the IIDT electrode 2. Sent
The SAW is converted from the SAW to an electric signal at the output IDT electrode of the IIDT electrode 2.
【００１９】この時、出力対をなすIDT 電極の電極指は
SAW の半波長毎に周期を持つため、出力された電気信号
は平衡信号となる。この平衡信号は立体配線された６，
７を通り、IDT 電極の共振子を格子型に構成した３の入
力となる９、１０の電極に入力される。At this time, the electrode fingers of the IDT electrodes forming the output pair are
The output electric signal is a balanced signal because it has a period for each half-wavelength of the SAW. This balanced signal is
The signal passes through 7 and is input to 9 and 10 electrodes, which are the 3 inputs that constitute the resonator of the IDT electrode in a lattice shape.
【００２０】格子型に構成した格子型回路３は、直列腕
となる共振子では共振周波数付近、格子腕となる共振子
では反共振周波数付近が通過帯域となる。In the lattice-type circuit 3 configured as a lattice, the pass band is around the resonance frequency for the resonator that is a series arm, and around the antiresonance frequency for the resonator that is a lattice arm.
【００２１】このため、３は直列腕となる共振子では共
振周波数と格子腕となる共振子では反共振周波数を概略
一致させるようにする。このようにIIDT電極および格子
型共振子構成により、不平衡信号から平衡信号への変換
機能とフィルタリング機能を有することになる。For this reason, the reference numeral 3 indicates that the resonance frequency of the resonator serving as a series arm and the anti-resonance frequency of the resonator serving as a lattice arm substantially match each other. As described above, the configuration of the IIDT electrode and the lattice resonator has a function of converting an unbalanced signal into a balanced signal and a function of filtering.
【００２２】図中では、入力側にIIDT電極、出力側に格
子型電極を配置させたが、これが逆の出力側にIIDT電
極、入力側に格子型電極を配置させても構わない。ま
た、格子型の替わりにIDT 電極を梯子型（ラティス型回
路）に構成させた電極構造を入力側に配置しても構わな
い。In the figure, the IIDT electrode is arranged on the input side and the lattice type electrode is arranged on the output side. However, the opposite side may be arranged with the IIDT electrode on the output side and the lattice type electrode on the input side. Further, an electrode structure in which the IDT electrode is formed in a ladder type (lattice type circuit) instead of the lattice type may be arranged on the input side.
【００２３】図５に示すように、フィルタの通過域の平
坦度を良好にするため、適切な電極膜厚が存在すること
が判った。図の帯域内偏差は、通過域内の最小挿入損失
から最大挿入損失を差し引いた値であり、通過域の平坦
度を示し、小さければ良好な特性であることがいえる。
帯域内偏差が良好な電極膜厚比（電極膜厚をIDT 電極の
周期長で割った値）は、IIDT電極では７％程度、格子構
造では９％程度、梯子構造では９％程度であり、これら
の複合させた本発明の構造では６．５％から１０．５％
が良好な範囲であることが判った。As shown in FIG. 5, it was found that an appropriate electrode film thickness was present in order to improve the flatness of the pass band of the filter. The in-band deviation in the figure is a value obtained by subtracting the maximum insertion loss from the minimum insertion loss in the pass band, indicates the flatness of the pass band, and it can be said that the smaller the smaller, the better the characteristics.
The electrode film thickness ratio (value obtained by dividing the electrode film thickness by the period length of the IDT electrode) having a good in-band deviation is about 7% for the IIDT electrode, about 9% for the lattice structure, and about 9% for the ladder structure. 6.5% to 10.5% for these composite structures of the present invention.
Was found to be in a good range.
【００２４】なお、ＳＡＷフィルタ用の圧電基板とし
て、36°±３°Y カットX 伝搬タンタル酸リチウム単結
晶、42°±３°Y カットX 伝搬タンタル酸リチウム単結
晶、64°±３°Y カットX 伝搬ニオブ酸リチウム単結
晶、41°±３°Y カットX 伝搬ニオブ酸リチウム単結
晶、45°±３°ＸカットＺ伝搬四ホウ酸リチウム単結晶
は電気機械結合係数が大きく且つ周波数温度係数が小さ
いため好ましい。As the piezoelectric substrate for the SAW filter, 36 ° ± 3 ° Y-cut X propagating lithium tantalate single crystal, 42 ° ± 3 ° Y-cut X propagating lithium tantalate single crystal, 64 ° ± 3 ° Y-cut X propagation lithium niobate single crystal, 41 ° ± 3 ° Y-cut X propagation lithium niobate single crystal, 45 ° ± 3 ° X-cut Z-propagation lithium tetraborate single crystal has large electromechanical coupling coefficient and frequency temperature coefficient It is preferable because it is small.
【００２５】また、圧電基板の厚みは０．１〜０．５ｍ
ｍ程度が良く、０．１ｍｍ未満では圧電基板が脆くな
り、０．５ｍｍ超では材料コストと部品寸法が大きくな
り、使用できない。The thickness of the piezoelectric substrate is 0.1 to 0.5 m.
When the diameter is less than 0.1 mm, the piezoelectric substrate becomes brittle, and when it exceeds 0.5 mm, the material cost and component dimensions increase, and the piezoelectric substrate cannot be used.
【００２６】また、ＩＤＴ電極及び反射器は、Al若しく
はAl合金（Al-Cu 系、Al -Ti系等）から成り、蒸着法、
スパッタリング法、またはCVD 法等の薄膜形成法により
形成する。そして、IDT 電極は、対数３０〜２００対程
度、IDT 電極ピッチは０．４ミクロン〜２０ミクロン程
度、交差幅（開口幅）は１０ミクロン〜５００ミクロン
程度、IDT 電極厚みは０．１ミクロン〜０．５ミクロン
程度とすることがSAWフィルタとしての特性を得る上で
好適である。The IDT electrode and the reflector are made of Al or an Al alloy (Al-Cu type, Al-Ti type, etc.),
It is formed by a thin film forming method such as a sputtering method or a CVD method. The IDT electrode has a logarithmic number of about 30 to 200 pairs, an IDT electrode pitch of about 0.4 to 20 microns, an intersection width (opening width) of about 10 to 500 microns, and an IDT electrode thickness of 0.1 to 0 microns. It is preferable that the thickness be about 0.5 μm in order to obtain characteristics as a SAW filter.
【００２７】また、本発明のSAW フィルタ素子の電極及
び圧電基板上のＳＡＷ伝搬部にSi、Si02、SiN 、Al2O3
を保護膜として形成して、導電性異物による通電防止や
耐電力向上を行っても構わない。In the SAW filter element of the present invention, Si, Si02, SiN, Al2O3
May be formed as a protective film to prevent conduction by a conductive foreign substance and to improve power resistance.
【００２８】本発明は上記の実施形態に限定されるもの
でなく、SAW フィルタだけでなく、SAW デュプレクサに
も本発明が適用でき、本発明の要旨を逸脱しない範囲で
種々の変更は何等差し支えない。The present invention is not limited to the above-described embodiment. The present invention can be applied not only to a SAW filter but also to a SAW duplexer, and various changes may be made without departing from the scope of the present invention. .
【００２９】[0029]
【実施例】図１に示したように入力側にIIDT電極型を出
力側に格子接続の共振子を配置させ、これらの配線は図
１の６、７の構造によりワイヤによる配線を簡便化した
設計を行った。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS As shown in FIG. 1, an IIDT electrode type is arranged on the input side and a lattice-connected resonator is arranged on the output side, and these wirings are simplified by wires by the structures shown in FIGS. Designed.
【００３０】IIDT電極の電極線幅は１．１ミクロンであ
り、格子型に構成された直列腕共振子のＩＤＴ電極の線
幅は１．０５ミクロンであり、また格子腕共振子のＩＤ
Ｔ電極の線幅は１．１ミクロンとした。また、電極膜厚
は３２００オングストロームであり、全櫛歯状電極ピッ
チの平均値λと櫛歯状電極の電極膜厚ｈとの比は７．４
％とした。The line width of the IIDT electrode is 1.1 μm, the line width of the IDT electrode of the series arm resonator formed in a lattice type is 1.05 μm, and the ID of the lattice arm resonator is 1.05 μm.
The line width of the T electrode was 1.1 microns. The electrode film thickness is 3200 angstroms, and the ratio of the average value λ of the pitch of all the comb-shaped electrodes to the electrode film thickness h of the comb-shaped electrodes is 7.4.
%.
【００３１】具体的な作製方法を、以下に説明する。A specific manufacturing method will be described below.
【００３２】４２° YカットX 伝搬タンタル酸リチウム
単結晶から成る圧電基板上に、前記構造、前記共振子電
極詳細を網羅する回路パターンを形成することにより作
製した。まず洗浄した基板にレジストを約１ミクロンの
膜厚で塗布し、窒素雰囲気中でベークを行った。The circuit was formed by forming a circuit pattern covering the above structure and the details of the resonator electrode on a piezoelectric substrate made of a 42 ° Y-cut X-propagating lithium tantalate single crystal. First, a resist having a thickness of about 1 micron was applied to the washed substrate, and baked in a nitrogen atmosphere.
【００３３】次に、紫外線(Deep-UV) を用いた密着露光
機によるフォトリソグラフィー法により基板上に多数の
SAW フィルタのレジストのネガパターンを形成した。こ
の時、フォトマスクは厚み0.25インチのものを使用し
た。次にネガパターン上に電子ビーム蒸着機でAlを成膜
した。Next, a number of photolithography methods are performed on a substrate by a photolithography method using a contact exposure device using ultraviolet light (Deep-UV).
A negative resist pattern for the SAW filter was formed. At this time, a photomask having a thickness of 0.25 inch was used. Next, an Al film was formed on the negative pattern using an electron beam evaporator.
【００３４】その後、レジスト剥離液中で不要なAlをリ
フトオフし、IDT 電極等の微細な回路パターンを作製し
た。その後、IDT 電極をネットワークアナライザに接続
し、挿入損失の周波数特性を測定した。その結果、図４
に示すように、帯域内偏差は１．２ｄB と良好な特性を
得られた。比較のため、通常のＩＩＤＴ電極構造でのフ
ィルタ特性を図３に示す。この図に示すように、通常の
ＩＩＤＴ電極構造では通過域近傍に所望しない通過特性
（スプリアス）が現れてしまうが、本実施例によれば、
図４に示すようにスプリアスは抑圧され良好な特性が得
られた。Thereafter, unnecessary Al was lifted off in the resist stripping solution to produce a fine circuit pattern such as an IDT electrode. Then, the IDT electrode was connected to a network analyzer, and the frequency characteristics of insertion loss were measured. As a result, FIG.
As shown in the graph, the in-band deviation was as good as 1.2 dB. For comparison, FIG. 3 shows a filter characteristic in a normal IIDT electrode structure. As shown in this figure, an undesired pass characteristic (spurious) appears in the vicinity of the pass band in the normal IIDT electrode structure, but according to the present embodiment,
As shown in FIG. 4, the spurious was suppressed and good characteristics were obtained.
【００３５】[0035]
【発明の効果】以上詳述したように、本発明の弾性表面
波フィルタによれば、電力に対して信頼性があり、ワイ
ヤ接続の乱雑さを解消できる平衡型SAW フィルタが実現
できる。特にＩＤＴ電極の電極ピッチの平均値λと櫛歯
状電極の電極膜厚ｈとの関係が６．５％ ＜ ｈ／λ
＜ １０．５％となるように設計することにより、通過
帯域の平滑な通過特性である優れた平衡型SAW フィルタ
を提供できる。As described above, according to the surface acoustic wave filter of the present invention, it is possible to realize a balanced SAW filter which is reliable with respect to electric power and can eliminate the disorder of wire connection. In particular, the relationship between the average value λ of the electrode pitch of the IDT electrode and the electrode thickness h of the comb-shaped electrode is 6.5% <h / λ.
By designing so as to be <10.5%, it is possible to provide an excellent balanced SAW filter having a smooth pass band pass characteristic.
【００３６】さらに、平衡−不平衡変換回路を用いるこ
となく高周波回路を平衡回路化することができるので、
部品点数の削減等を実現し小型化が可能な優れた弾性表
面波フィルタを提供できる。Further, since a high-frequency circuit can be made into a balanced circuit without using a balanced-unbalanced conversion circuit,
It is possible to provide an excellent surface acoustic wave filter capable of reducing the number of parts and achieving downsizing.
【図１】本発明に係る弾性表面波フィルタを説明する平
面図である。FIG. 1 is a plan view illustrating a surface acoustic wave filter according to the present invention.
【図２】（ａ）は図１のＡ−Ａ’線概略断面図、（ｂ）
は図１のＢ−Ｂ’線概略断面図、（ｃ）は図１のＣ−
Ｃ’線概略断面図である。FIG. 2A is a schematic cross-sectional view taken along the line AA ′ of FIG. 1, FIG.
1 is a schematic cross-sectional view taken along the line BB ′ of FIG. 1, and FIG.
FIG. 4 is a schematic sectional view taken along line C ′.
【図３】従来のＩＩＤＴ電極型の弾性表面波フィルタの
電気特性を示す線図である。FIG. 3 is a diagram showing electric characteristics of a conventional IIDT electrode type surface acoustic wave filter.
【図４】本発明の弾性表面波フィルタの電気特性を示す
線図である。FIG. 4 is a diagram showing electric characteristics of the surface acoustic wave filter of the present invention.
【図５】各種タイプの弾性表面波フィルタの電極膜厚比
と帯域内偏差との関係を示す線図である。FIG. 5 is a diagram showing a relationship between an electrode film thickness ratio and an in-band deviation of various types of surface acoustic wave filters.
１：圧電基板 ２：ＩＩＤＴ電極 ３：格子型電極 ４：入力電極 ５：接地電極 ６：入力側立体配線部 ７：接地側立体配線部 ８：絶縁体薄膜 ９：格子型電極の入力電極１ １０：格子型電極の入力電極２ １１：平衡出力対の一方の電極 １２：平衡出力対の他方の電極 Ｓ：弾性表面波フィルタ 1: Piezoelectric substrate 2: IIDT electrode 3: Lattice electrode 4: Input electrode 5: Ground electrode 6: Input-side three-dimensional wiring part 7: Ground-side three-dimensional wiring part 8: Insulator thin film 9: Input electrode 110 of lattice-type electrode : Input electrode 2 of lattice type electrode 11: one electrode of balanced output pair 12: the other electrode of balanced output pair S: surface acoustic wave filter
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10218313AJP2000049567A (en) | 1998-07-31 | 1998-07-31 | Surface acoustic wave filter |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10218313AJP2000049567A (en) | 1998-07-31 | 1998-07-31 | Surface acoustic wave filter |
| Publication Number | Publication Date |
|---|---|
| JP2000049567Atrue JP2000049567A (en) | 2000-02-18 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10218313APendingJP2000049567A (en) | 1998-07-31 | 1998-07-31 | Surface acoustic wave filter |
| Country | Link |
|---|---|
| JP (1) | JP2000049567A (en) |
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| US7295089B2 (en) | 2003-02-24 | 2007-11-13 | Murata Manufacturing Co., Ltd. | Surface acoustic wave filter and communication apparatus |
| US7486159B2 (en) | 2004-07-23 | 2009-02-03 | Murata Manufacturing Co., Ltd. | Surface acoustic wave device |
| JP2011130513A (en)* | 2001-10-29 | 2011-06-30 | Panasonic Corp | Surface acoustic wave filter element, module, and communication device |
| WO2016017308A1 (en)* | 2014-07-28 | 2016-02-04 | 株式会社村田製作所 | Elastic wave device |
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| JP2011130513A (en)* | 2001-10-29 | 2011-06-30 | Panasonic Corp | Surface acoustic wave filter element, module, and communication device |
| US7295089B2 (en) | 2003-02-24 | 2007-11-13 | Murata Manufacturing Co., Ltd. | Surface acoustic wave filter and communication apparatus |
| EP2197107B1 (en)* | 2003-02-24 | 2013-06-26 | Murata Manufacturing Co., Ltd. | Surface acoustic wave filter and communication apparatus |
| EP1453198B1 (en)* | 2003-02-24 | 2013-01-30 | Murata Manufacturing Co., Ltd. | Surface acoustic wave filter and communication apparatus |
| US7486159B2 (en) | 2004-07-23 | 2009-02-03 | Murata Manufacturing Co., Ltd. | Surface acoustic wave device |
| JP4811409B2 (en)* | 2005-11-14 | 2011-11-09 | 株式会社村田製作所 | Manufacturing method of surface acoustic wave device |
| WO2007055077A1 (en)* | 2005-11-14 | 2007-05-18 | Murata Manufacturing Co., Ltd. | Process for fabricating surface acoustic wave device and surface acoustic wave device |
| JPWO2007055077A1 (en)* | 2005-11-14 | 2009-04-30 | 株式会社村田製作所 | Method for manufacturing surface acoustic wave device and surface acoustic wave device |
| US7479852B2 (en) | 2005-11-14 | 2009-01-20 | Murata Manufacturing Co., Ltd. | Method for manufacturing surface acoustic wave device and surface acoustic wave device |
| WO2016017308A1 (en)* | 2014-07-28 | 2016-02-04 | 株式会社村田製作所 | Elastic wave device |
| CN106537773A (en)* | 2014-07-28 | 2017-03-22 | 株式会社村田制作所 | Elastic wave device |
| JPWO2016017308A1 (en)* | 2014-07-28 | 2017-04-27 | 株式会社村田製作所 | Elastic wave device |
| US20170134003A1 (en)* | 2014-07-28 | 2017-05-11 | Murata Manufacturing Co., Ltd. | Elastic wave device |
| CN106537773B (en)* | 2014-07-28 | 2019-03-08 | 株式会社村田制作所 | Acoustic wave device |
| US10622964B2 (en) | 2014-07-28 | 2020-04-14 | Murata Manufacturing Co., Ltd. | Elastic wave device |
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