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IT979035B - INTEGRATED CIRCUIT DEVICE FOR STORING BINARY INFORMATION WITH ELECTRO-LUMINESCENT EMISSION - Google Patents

INTEGRATED CIRCUIT DEVICE FOR STORING BINARY INFORMATION WITH ELECTRO-LUMINESCENT EMISSION

Info

Publication number
IT979035B
IT979035BIT20299/73AIT2029973AIT979035BIT 979035 BIT979035 BIT 979035BIT 20299/73 AIT20299/73 AIT 20299/73AIT 2029973 AIT2029973 AIT 2029973AIT 979035 BIT979035 BIT 979035B
Authority
IT
Italy
Prior art keywords
electro
integrated circuit
circuit device
binary information
storing binary
Prior art date
Application number
IT20299/73A
Other languages
Italian (it)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IbmfiledCriticalIbm
Application grantedgrantedCritical
Publication of IT979035BpublicationCriticalpatent/IT979035B/en

Links

Classifications

Landscapes

IT20299/73A1972-04-251973-02-13 INTEGRATED CIRCUIT DEVICE FOR STORING BINARY INFORMATION WITH ELECTRO-LUMINESCENT EMISSIONIT979035B (en)

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
US24730072A1972-04-251972-04-25

Publications (1)

Publication NumberPublication Date
IT979035Btrue IT979035B (en)1974-09-30

Family

ID=22934384

Family Applications (1)

Application NumberTitlePriority DateFiling Date
IT20299/73AIT979035B (en)1972-04-251973-02-13 INTEGRATED CIRCUIT DEVICE FOR STORING BINARY INFORMATION WITH ELECTRO-LUMINESCENT EMISSION

Country Status (10)

CountryLink
JP (1)JPS5212073B2 (en)
CA (1)CA1003106A (en)
CH (1)CH546461A (en)
DE (1)DE2319714A1 (en)
ES (1)ES413258A1 (en)
FR (1)FR2181850B1 (en)
GB (1)GB1414228A (en)
IT (1)IT979035B (en)
NL (1)NL7305263A (en)
SE (1)SE389573B (en)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
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JPS5428578A (en)*1977-08-081979-03-03Clarion Co LtdSemiconductor memory
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EP1351307A1 (en)*2002-03-282003-10-08Innovative Silicon SAMethod of driving a semiconductor device
EP1355316B1 (en)2002-04-182007-02-21Innovative Silicon SAData storage device and refreshing method for use with such device
EP1357603A3 (en)2002-04-182004-01-14Innovative Silicon SASemiconductor device
US6912150B2 (en)2003-05-132005-06-28Lionel PortmanReference current generator, and method of programming, adjusting and/or operating same
US20040228168A1 (en)2003-05-132004-11-18Richard FerrantSemiconductor memory device and method of operating same
US7085153B2 (en)2003-05-132006-08-01Innovative Silicon S.A.Semiconductor memory cell, array, architecture and device, and method of operating same
US7335934B2 (en)2003-07-222008-02-26Innovative Silicon S.A.Integrated circuit device, and method of fabricating same
US7184298B2 (en)2003-09-242007-02-27Innovative Silicon S.A.Low power programming technique for a floating body memory transistor, memory cell, and memory array
US7476939B2 (en)2004-11-042009-01-13Innovative Silicon Isi SaMemory cell having an electrically floating body transistor and programming technique therefor
US7251164B2 (en)2004-11-102007-07-31Innovative Silicon S.A.Circuitry for and method of improving statistical distribution of integrated circuits
US7301838B2 (en)2004-12-132007-11-27Innovative Silicon S.A.Sense amplifier circuitry and architecture to write data into and/or read from memory cells
US7301803B2 (en)2004-12-222007-11-27Innovative Silicon S.A.Bipolar reading technique for a memory cell having an electrically floating body transistor
US7606066B2 (en)2005-09-072009-10-20Innovative Silicon Isi SaMemory cell and memory cell array having an electrically floating body transistor, and methods of operating same
US7355916B2 (en)2005-09-192008-04-08Innovative Silicon S.A.Method and circuitry to generate a reference current for reading a memory cell, and device implementing same
US7683430B2 (en)2005-12-192010-03-23Innovative Silicon Isi SaElectrically floating body memory cell and array, and method of operating or controlling same
US7542345B2 (en)2006-02-162009-06-02Innovative Silicon Isi SaMulti-bit memory cell having electrically floating body transistor, and method of programming and reading same
US7492632B2 (en)2006-04-072009-02-17Innovative Silicon Isi SaMemory array having a programmable word length, and method of operating same
US7606098B2 (en)2006-04-182009-10-20Innovative Silicon Isi SaSemiconductor memory array architecture with grouped memory cells, and method of controlling same
US7933142B2 (en)2006-05-022011-04-26Micron Technology, Inc.Semiconductor memory cell and array using punch-through to program and read same
US8069377B2 (en)2006-06-262011-11-29Micron Technology, Inc.Integrated circuit having memory array including ECC and column redundancy and method of operating the same
US7542340B2 (en)2006-07-112009-06-02Innovative Silicon Isi SaIntegrated circuit including memory array having a segmented bit line architecture and method of controlling and/or operating same
KR101277402B1 (en)2007-01-262013-06-20마이크론 테크놀로지, 인코포레이티드Floating-body dram transistor comprising source/drain regions separated from the gated body region
US8518774B2 (en)2007-03-292013-08-27Micron Technology, Inc.Manufacturing process for zero-capacitor random access memory circuits
US8064274B2 (en)2007-05-302011-11-22Micron Technology, Inc.Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same
US8085594B2 (en)2007-06-012011-12-27Micron Technology, Inc.Reading technique for memory cell with electrically floating body transistor
WO2009039169A1 (en)2007-09-172009-03-26Innovative Silicon S.A.Refreshing data of memory cells with electrically floating body transistors
US8536628B2 (en)2007-11-292013-09-17Micron Technology, Inc.Integrated circuit having memory cell array including barriers, and method of manufacturing same
US8349662B2 (en)2007-12-112013-01-08Micron Technology, Inc.Integrated circuit having memory cell array, and method of manufacturing same
US8773933B2 (en)2012-03-162014-07-08Micron Technology, Inc.Techniques for accessing memory cells
US8014195B2 (en)2008-02-062011-09-06Micron Technology, Inc.Single transistor memory cell
US8189376B2 (en)2008-02-082012-05-29Micron Technology, Inc.Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same
US7957206B2 (en)2008-04-042011-06-07Micron Technology, Inc.Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same
US7947543B2 (en)2008-09-252011-05-24Micron Technology, Inc.Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
US7933140B2 (en)2008-10-022011-04-26Micron Technology, Inc.Techniques for reducing a voltage swing
US7924630B2 (en)2008-10-152011-04-12Micron Technology, Inc.Techniques for simultaneously driving a plurality of source lines
US8223574B2 (en)2008-11-052012-07-17Micron Technology, Inc.Techniques for block refreshing a semiconductor memory device
US8213226B2 (en)2008-12-052012-07-03Micron Technology, Inc.Vertical transistor memory cell and array
US8319294B2 (en)2009-02-182012-11-27Micron Technology, Inc.Techniques for providing a source line plane
WO2010102106A2 (en)2009-03-042010-09-10Innovative Silicon Isi SaTechniques for forming a contact to a buried diffusion layer in a semiconductor memory device
US8748959B2 (en)2009-03-312014-06-10Micron Technology, Inc.Semiconductor memory device
US8139418B2 (en)2009-04-272012-03-20Micron Technology, Inc.Techniques for controlling a direct injection semiconductor memory device
US8508994B2 (en)2009-04-302013-08-13Micron Technology, Inc.Semiconductor device with floating gate and electrically floating body
US8498157B2 (en)2009-05-222013-07-30Micron Technology, Inc.Techniques for providing a direct injection semiconductor memory device
US8537610B2 (en)2009-07-102013-09-17Micron Technology, Inc.Techniques for providing a semiconductor memory device
US9076543B2 (en)2009-07-272015-07-07Micron Technology, Inc.Techniques for providing a direct injection semiconductor memory device
US8199595B2 (en)2009-09-042012-06-12Micron Technology, Inc.Techniques for sensing a semiconductor memory device
US8174881B2 (en)2009-11-242012-05-08Micron Technology, Inc.Techniques for reducing disturbance in a semiconductor device
US8310893B2 (en)2009-12-162012-11-13Micron Technology, Inc.Techniques for reducing impact of array disturbs in a semiconductor memory device
US8416636B2 (en)2010-02-122013-04-09Micron Technology, Inc.Techniques for controlling a semiconductor memory device
US8411513B2 (en)2010-03-042013-04-02Micron Technology, Inc.Techniques for providing a semiconductor memory device having hierarchical bit lines
US8576631B2 (en)2010-03-042013-11-05Micron Technology, Inc.Techniques for sensing a semiconductor memory device
US8369177B2 (en)2010-03-052013-02-05Micron Technology, Inc.Techniques for reading from and/or writing to a semiconductor memory device
US8547738B2 (en)2010-03-152013-10-01Micron Technology, Inc.Techniques for providing a semiconductor memory device
US8411524B2 (en)2010-05-062013-04-02Micron Technology, Inc.Techniques for refreshing a semiconductor memory device
US8531878B2 (en)2011-05-172013-09-10Micron Technology, Inc.Techniques for providing a semiconductor memory device
US9559216B2 (en)2011-06-062017-01-31Micron Technology, Inc.Semiconductor memory device and method for biasing same

Also Published As

Publication numberPublication date
JPS5212073B2 (en)1977-04-04
ES413258A1 (en)1976-01-01
JPS4922882A (en)1974-02-28
NL7305263A (en)1973-10-29
CA1003106A (en)1977-01-04
DE2319714A1 (en)1973-11-15
FR2181850B1 (en)1978-05-26
GB1414228A (en)1975-11-19
FR2181850A1 (en)1973-12-07
SE389573B (en)1976-11-08
CH546461A (en)1974-02-28

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