Movatterモバイル変換


[0]ホーム

URL:


GB9401227D0 - Non-volatile digital memory device with multi-level storage cells - Google Patents

Non-volatile digital memory device with multi-level storage cells

Info

Publication number
GB9401227D0
GB9401227D0GB9401227AGB9401227AGB9401227D0GB 9401227 D0GB9401227 D0GB 9401227D0GB 9401227 AGB9401227 AGB 9401227AGB 9401227 AGB9401227 AGB 9401227AGB 9401227 D0GB9401227 D0GB 9401227D0
Authority
GB
United Kingdom
Prior art keywords
memory device
storage cells
digital memory
level storage
volatile digital
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
GB9401227A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MEMORY CORP Ltd
Original Assignee
MEMORY CORP Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MEMORY CORP LtdfiledCriticalMEMORY CORP Ltd
Priority to GB9401227ApriorityCriticalpatent/GB9401227D0/en
Publication of GB9401227D0publicationCriticalpatent/GB9401227D0/en
Priority to PCT/GB1995/000125prioritypatent/WO1995020224A1/en
Priority to AU15401/95Aprioritypatent/AU1540195A/en
Pendinglegal-statusCriticalCurrent

Links

GB9401227A1994-01-221994-01-22Non-volatile digital memory device with multi-level storage cellsPendingGB9401227D0 (en)

Priority Applications (3)

Application NumberPriority DateFiling DateTitle
GB9401227AGB9401227D0 (en)1994-01-221994-01-22Non-volatile digital memory device with multi-level storage cells
PCT/GB1995/000125WO1995020224A1 (en)1994-01-221995-01-23Analogue memory system
AU15401/95AAU1540195A (en)1994-01-221995-01-23Analogue memory system

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
GB9401227AGB9401227D0 (en)1994-01-221994-01-22Non-volatile digital memory device with multi-level storage cells

Publications (1)

Publication NumberPublication Date
GB9401227D0true GB9401227D0 (en)1994-03-16

Family

ID=10749185

Family Applications (1)

Application NumberTitlePriority DateFiling Date
GB9401227APendingGB9401227D0 (en)1994-01-221994-01-22Non-volatile digital memory device with multi-level storage cells

Country Status (3)

CountryLink
AU (1)AU1540195A (en)
GB (1)GB9401227D0 (en)
WO (1)WO1995020224A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US5687114A (en)1995-10-061997-11-11Agate Semiconductor, Inc.Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell
US5815439A (en)*1996-04-301998-09-29Agate Semiconductor, Inc.Stabilization circuits and techniques for storage and retrieval of single or multiple digital bits per memory cell
US6857099B1 (en)*1996-09-182005-02-15Nippon Steel CorporationMultilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program
US5890198A (en)*1996-10-221999-03-30Micron Technology, Inc.Intelligent refresh controller for dynamic memory devices
US6487116B2 (en)1997-03-062002-11-26Silicon Storage Technology, Inc.Precision programming of nonvolatile memory cells
US5870335A (en)1997-03-061999-02-09Agate Semiconductor, Inc.Precision programming of nonvolatile memory cells
US6282145B1 (en)1999-01-142001-08-28Silicon Storage Technology, Inc.Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system
US6075719A (en)*1999-06-222000-06-13Energy Conversion Devices, Inc.Method of programming phase-change memory element
US6396742B1 (en)2000-07-282002-05-28Silicon Storage Technology, Inc.Testing of multilevel semiconductor memory
US6538922B1 (en)2000-09-272003-03-25Sandisk CorporationWritable tracking cells
US7237074B2 (en)2003-06-132007-06-26Sandisk CorporationTracking cells for a memory system
US7471552B2 (en)2003-08-042008-12-30Ovonyx, Inc.Analog phase change memory
US7301807B2 (en)2003-10-232007-11-27Sandisk CorporationWritable tracking cells

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US5099297A (en)*1988-02-051992-03-24Emanuel HazaniEEPROM cell structure and architecture with programming and erase terminals shared between several cells
US5095344A (en)*1988-06-081992-03-10Eliyahou HarariHighly compact eprom and flash eeprom devices
US5172338B1 (en)*1989-04-131997-07-08Sandisk CorpMulti-state eeprom read and write circuits and techniques
US5218569A (en)*1991-02-081993-06-08Banks Gerald JElectrically alterable non-volatile memory with n-bits per memory cell

Also Published As

Publication numberPublication date
WO1995020224A1 (en)1995-07-27
AU1540195A (en)1995-08-08

Similar Documents

PublicationPublication DateTitle
EP0763242A4 (en)Sensing schemes for flash memory with multilevel cells
EP0530644A3 (en)Non-volatile memory cell and fabrication method
GB2241825B (en)Three-dimensional memory cell with integral select transistor
EP0557581A3 (en)Non-volatile dram cell
EP0809846A4 (en)Nonvolatile magnetoresistive memory with fully closed-flux operation
EP0914658A4 (en)Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping
EP0613148A3 (en)Nonvolatile magnetoresistive storage device.
SG77261A1 (en)Non-volatile magnetic memory cell and devices
EP0485018A3 (en)Electrically erasable and programmable read only memory with trench structure
AU6598496A (en)Non-volatile electrically alterable semiconductor memory for analog and digital storage
AU9056398A (en)Non-volatile memory cell
IL147119A0 (en)High density non-volatile memory device
EP0311773A3 (en)Non-volatile memory cell
AU7475196A (en)Semiconductor non-volatile memory device having a nand cell structure
GB9502723D0 (en)Memory element, monvolatile memory, nonvolatile storage device, and method for storing information by use of the storage device
EP0663665A3 (en)Memory cell with programmable antifuse technology.
EP0664544A3 (en)Stress reduction for non-volatile memory cell.
EP0495492A3 (en)Non-volatile memory cell structure and process for forming same
EP0728360A4 (en)Single transistor per cell eeprom memory device with bit line sector page programming
GB9401227D0 (en)Non-volatile digital memory device with multi-level storage cells
AU4671097A (en)Flash memory with divided bitline
EP0618589A3 (en)Nonvolatile storage device.
EP0581443A3 (en)Memory cell with known state on power-up.
DE69627318D1 (en) Multi-level non-volatile memory device
IL125250A0 (en)Memory storage arrays

[8]ページ先頭

©2009-2025 Movatter.jp