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GB368850A - Improvements relating to electric current rectifying devices - Google Patents

Improvements relating to electric current rectifying devices

Info

Publication number
GB368850A
GB368850AGB37606/30AGB3760630AGB368850AGB 368850 AGB368850 AGB 368850AGB 37606/30 AGB37606/30 AGB 37606/30AGB 3760630 AGB3760630 AGB 3760630AGB 368850 AGB368850 AGB 368850A
Authority
GB
United Kingdom
Prior art keywords
copper
electric current
improvements relating
current rectifying
rectifying devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB37606/30A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Mobility Ltd
Original Assignee
Westinghouse Brake and Signal Co Ltd
Westinghouse Brake and Saxby Signal Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Brake and Signal Co Ltd, Westinghouse Brake and Saxby Signal Co LtdfiledCriticalWestinghouse Brake and Signal Co Ltd
Publication of GB368850ApublicationCriticalpatent/GB368850A/en
Expiredlegal-statusCriticalCurrent

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Abstract

In order to provide an electrode on the oxide surface of a copper-oxide rectifier, the copper blank is heated to 1040 DEG C. in an oxygen atmosphere, the outer surface of the copperoxide layer so produced is reduced to copper by quenching it in alcohol or other reducing agents, or electrolytically, and vaporized copper or other metal is sprayed on to the surface of the oxide layer, for example by means of a "Shoop spray."
GB37606/30A1930-06-071930-12-12Improvements relating to electric current rectifying devicesExpiredGB368850A (en)

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
US368850XA1930-06-071930-06-07

Publications (1)

Publication NumberPublication Date
GB368850Atrue GB368850A (en)1932-03-14

Family

ID=21891200

Family Applications (1)

Application NumberTitlePriority DateFiling Date
GB37606/30AExpiredGB368850A (en)1930-06-071930-12-12Improvements relating to electric current rectifying devices

Country Status (2)

CountryLink
DE (1)DE574375C (en)
GB (1)GB368850A (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
WO2001088972A1 (en)*2000-05-152001-11-22Asm Microchemistry OyProcess for producing integrated circuits
US7494927B2 (en)2000-05-152009-02-24Asm International N.V.Method of growing electrical conductors
US7655564B2 (en)2007-12-122010-02-02Asm Japan, K.K.Method for forming Ta-Ru liner layer for Cu wiring
US7666773B2 (en)2005-03-152010-02-23Asm International N.V.Selective deposition of noble metal thin films
US7799674B2 (en)2008-02-192010-09-21Asm Japan K.K.Ruthenium alloy film for copper interconnects
US7927942B2 (en)2008-12-192011-04-19Asm International N.V.Selective silicide process
US8025922B2 (en)2005-03-152011-09-27Asm International N.V.Enhanced deposition of noble metals
US8084104B2 (en)2008-08-292011-12-27Asm Japan K.K.Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition
US8133555B2 (en)2008-10-142012-03-13Asm Japan K.K.Method for forming metal film by ALD using beta-diketone metal complex
US8273408B2 (en)2007-10-172012-09-25Asm Genitech Korea Ltd.Methods of depositing a ruthenium film
US8329569B2 (en)2009-07-312012-12-11Asm America, Inc.Deposition of ruthenium or ruthenium dioxide
US9129897B2 (en)2008-12-192015-09-08Asm International N.V.Metal silicide, metal germanide, methods for making the same
US9379011B2 (en)2008-12-192016-06-28Asm International N.V.Methods for depositing nickel films and for making nickel silicide and nickel germanide
US9607842B1 (en)2015-10-022017-03-28Asm Ip Holding B.V.Methods of forming metal silicides
US12354877B2 (en)2020-06-242025-07-08Asm Ip Holding B.V.Vapor deposition of films comprising molybdenum

Cited By (29)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US8536058B2 (en)2000-05-152013-09-17Asm International N.V.Method of growing electrical conductors
US7955979B2 (en)2000-05-152011-06-07Asm International N.V.Method of growing electrical conductors
US7241677B2 (en)2000-05-152007-07-10Asm International N.V.Process for producing integrated circuits including reduction using gaseous organic compounds
US7494927B2 (en)2000-05-152009-02-24Asm International N.V.Method of growing electrical conductors
WO2001088972A1 (en)*2000-05-152001-11-22Asm Microchemistry OyProcess for producing integrated circuits
US6921712B2 (en)2000-05-152005-07-26Asm International NvProcess for producing integrated circuits including reduction using gaseous organic compounds
US9469899B2 (en)2005-03-152016-10-18Asm International N.V.Selective deposition of noble metal thin films
US9587307B2 (en)2005-03-152017-03-07Asm International N.V.Enhanced deposition of noble metals
US7666773B2 (en)2005-03-152010-02-23Asm International N.V.Selective deposition of noble metal thin films
US7985669B2 (en)2005-03-152011-07-26Asm International N.V.Selective deposition of noble metal thin films
US8025922B2 (en)2005-03-152011-09-27Asm International N.V.Enhanced deposition of noble metals
US8501275B2 (en)2005-03-152013-08-06Asm International N.V.Enhanced deposition of noble metals
US8927403B2 (en)2005-03-152015-01-06Asm International N.V.Selective deposition of noble metal thin films
US8273408B2 (en)2007-10-172012-09-25Asm Genitech Korea Ltd.Methods of depositing a ruthenium film
US7655564B2 (en)2007-12-122010-02-02Asm Japan, K.K.Method for forming Ta-Ru liner layer for Cu wiring
US7799674B2 (en)2008-02-192010-09-21Asm Japan K.K.Ruthenium alloy film for copper interconnects
US8084104B2 (en)2008-08-292011-12-27Asm Japan K.K.Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition
US8133555B2 (en)2008-10-142012-03-13Asm Japan K.K.Method for forming metal film by ALD using beta-diketone metal complex
US7927942B2 (en)2008-12-192011-04-19Asm International N.V.Selective silicide process
US9129897B2 (en)2008-12-192015-09-08Asm International N.V.Metal silicide, metal germanide, methods for making the same
US9379011B2 (en)2008-12-192016-06-28Asm International N.V.Methods for depositing nickel films and for making nickel silicide and nickel germanide
US8293597B2 (en)2008-12-192012-10-23Asm International N.V.Selective silicide process
US9634106B2 (en)2008-12-192017-04-25Asm International N.V.Doped metal germanide and methods for making the same
US10553440B2 (en)2008-12-192020-02-04Asm International N.V.Methods for depositing nickel films and for making nickel silicide and nickel germanide
US8329569B2 (en)2009-07-312012-12-11Asm America, Inc.Deposition of ruthenium or ruthenium dioxide
US10043880B2 (en)2011-04-222018-08-07Asm International N.V.Metal silicide, metal germanide, methods for making the same
US9607842B1 (en)2015-10-022017-03-28Asm Ip Holding B.V.Methods of forming metal silicides
US10199234B2 (en)2015-10-022019-02-05Asm Ip Holding B.V.Methods of forming metal silicides
US12354877B2 (en)2020-06-242025-07-08Asm Ip Holding B.V.Vapor deposition of films comprising molybdenum

Also Published As

Publication numberPublication date
DE574375C (en)1933-04-12

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