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GB2443376A - Semiconductor memory device having bit registering layer and method of driving the same - Google Patents

Semiconductor memory device having bit registering layer and method of driving the sameDownload PDF

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Publication number
GB2443376A
GB2443376AGB0804034AGB0804034AGB2443376AGB 2443376 AGB2443376 AGB 2443376AGB 0804034 AGB0804034 AGB 0804034AGB 0804034 AGB0804034 AGB 0804034AGB 2443376 AGB2443376 AGB 2443376A
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GB
United Kingdom
Prior art keywords
memory
memory device
layer
semiconductor memory
driving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB0804034A
Other versions
GB0804034D0 (en
GB2443376A8 (en
GB2443376B (en
Inventor
Hong Sik Yoon
In Seok Yeo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020050086689Aexternal-prioritypatent/KR100655078B1/en
Application filed by Samsung Electronics Co LtdfiledCriticalSamsung Electronics Co Ltd
Publication of GB0804034D0publicationCriticalpatent/GB0804034D0/en
Publication of GB2443376ApublicationCriticalpatent/GB2443376A/en
Publication of GB2443376A8publicationCriticalpatent/GB2443376A8/en
Application grantedgrantedCritical
Publication of GB2443376BpublicationCriticalpatent/GB2443376B/en
Activelegal-statusCriticalCurrent
Anticipated expirationlegal-statusCritical

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Abstract

The semiconductor memory device includes a memory layer having a plurality of memory cells for storing data, and at least one bit registering layer for recording status information on whether the memory cells are defective. The memory layer may be a nanometer-scale memory device, such as a molecular memory, a carbon nanotube memory, an atomic memory, a single electron memory, or a memory fabricated by a chemical bottom-up method, etc.
GB0804034A2005-09-162006-05-09Semiconductor memory device having bit registering layer and method of driving the sameActiveGB2443376B (en)

Applications Claiming Priority (3)

Application NumberPriority DateFiling DateTitle
KR1020050086689AKR100655078B1 (en)2005-09-162005-09-16 Semiconductor memory device having bit register layer and driving method thereof
US11/365,585US7535778B2 (en)2005-09-162006-03-02Semiconductor memory device with memory cells, each having bit registering layer in addition to a memory layer and method of driving the same
PCT/KR2006/001727WO2007032588A1 (en)2005-09-162006-05-09Semiconductor memory device having bit registering layer and method of driving the same

Publications (4)

Publication NumberPublication Date
GB0804034D0 GB0804034D0 (en)2008-04-09
GB2443376Atrue GB2443376A (en)2008-04-30
GB2443376A8 GB2443376A8 (en)2008-05-19
GB2443376B GB2443376B (en)2011-03-23

Family

ID=37865147

Family Applications (1)

Application NumberTitlePriority DateFiling Date
GB0804034AActiveGB2443376B (en)2005-09-162006-05-09Semiconductor memory device having bit registering layer and method of driving the same

Country Status (3)

CountryLink
DE (1)DE112006002421B4 (en)
GB (1)GB2443376B (en)
WO (1)WO2007032588A1 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US5359559A (en)*1991-05-211994-10-25Texas Instruments IncorporatedSemiconductor memory device having redundant memory cells
US6205065B1 (en)*1999-01-262001-03-20Nec CorporationSemiconductor memory device having redundancy memory circuit
US6246617B1 (en)*1999-03-112001-06-12Kabushiki Kaisha ToshibaSemiconductor memory device capable of recovering defective bit and a system having the same semiconductor memory device
US6807101B2 (en)*2002-03-062004-10-19Renesas Technology Corp.Semiconductor memory device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US5532966A (en)1995-06-131996-07-02Alliance Semiconductor CorporationRandom access memory redundancy circuit employing fusible links
US6683783B1 (en)1997-03-072004-01-27William Marsh Rice UniversityCarbon fibers formed from single-wall carbon nanotubes
US6472705B1 (en)1998-11-182002-10-29International Business Machines CorporationMolecular memory & logic
US6483734B1 (en)2001-11-262002-11-19Hewlett Packard CompanyMemory device having memory cells capable of four states
US6549457B1 (en)2002-02-152003-04-15Intel CorporationUsing multiple status bits per cell for handling power failures during write operations
JP2003346496A (en)2002-05-222003-12-05Mitsubishi Electric Corp Failure information storage device, failure information accumulation processing device having the device, failure information accumulation method, semiconductor device test device having failure information storage device, and semiconductor device having failure information storage device
US7006392B2 (en)*2004-01-262006-02-28Micron Technology, Inc.Memory redundancy programming
EP1624463A1 (en)*2004-07-142006-02-08STMicroelectronics S.r.l.A Programmable memory device with an improved redundancy structure

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US5359559A (en)*1991-05-211994-10-25Texas Instruments IncorporatedSemiconductor memory device having redundant memory cells
US6205065B1 (en)*1999-01-262001-03-20Nec CorporationSemiconductor memory device having redundancy memory circuit
US6246617B1 (en)*1999-03-112001-06-12Kabushiki Kaisha ToshibaSemiconductor memory device capable of recovering defective bit and a system having the same semiconductor memory device
US6807101B2 (en)*2002-03-062004-10-19Renesas Technology Corp.Semiconductor memory device

Also Published As

Publication numberPublication date
GB0804034D0 (en)2008-04-09
WO2007032588A1 (en)2007-03-22
GB2443376A8 (en)2008-05-19
GB2443376B (en)2011-03-23
DE112006002421T5 (en)2008-07-24
DE112006002421B4 (en)2018-11-29

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