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GB2400725B - Electrodeposited semiconductors - Google Patents

Electrodeposited semiconductors

Info

Publication number
GB2400725B
GB2400725BGB0308826AGB0308826AGB2400725BGB 2400725 BGB2400725 BGB 2400725BGB 0308826 AGB0308826 AGB 0308826AGB 0308826 AGB0308826 AGB 0308826AGB 2400725 BGB2400725 BGB 2400725B
Authority
GB
United Kingdom
Prior art keywords
electrodeposited
semiconductors
electrodeposited semiconductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0308826A
Other versions
GB2400725A (en
GB0308826D0 (en
Inventor
Imyhamy Mudiyansela Dharmadasa
N B Chaure
John Young
Anura Priyajith Samantilleke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sheffield Hallam University
Original Assignee
Sheffield Hallam University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sheffield Hallam UniversityfiledCriticalSheffield Hallam University
Priority to GB0308826ApriorityCriticalpatent/GB2400725B/en
Publication of GB0308826D0publicationCriticalpatent/GB0308826D0/en
Publication of GB2400725ApublicationCriticalpatent/GB2400725A/en
Application grantedgrantedCritical
Publication of GB2400725BpublicationCriticalpatent/GB2400725B/en
Anticipated expirationlegal-statusCritical
Expired - Fee Relatedlegal-statusCriticalCurrent

Links

Classifications

Landscapes

GB0308826A2003-04-172003-04-17Electrodeposited semiconductorsExpired - Fee RelatedGB2400725B (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
GB0308826AGB2400725B (en)2003-04-172003-04-17Electrodeposited semiconductors

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
GB0308826AGB2400725B (en)2003-04-172003-04-17Electrodeposited semiconductors

Publications (3)

Publication NumberPublication Date
GB0308826D0 GB0308826D0 (en)2003-05-21
GB2400725A GB2400725A (en)2004-10-20
GB2400725Btrue GB2400725B (en)2005-11-16

Family

ID=9956911

Family Applications (1)

Application NumberTitlePriority DateFiling Date
GB0308826AExpired - Fee RelatedGB2400725B (en)2003-04-172003-04-17Electrodeposited semiconductors

Country Status (1)

CountryLink
GB (1)GB2400725B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US20080216885A1 (en)2007-03-062008-09-11Sergey FrolovSpectrally adaptive multijunction photovoltaic thin film device and method of producing same
CN100452446C (en)*2007-05-292009-01-14中南大学A method for pulse electrodeposit CIGS semiconductor film material
US20090215215A1 (en)2008-02-212009-08-27Sunlight Photonics Inc.Method and apparatus for manufacturing multi-layered electro-optic devices
US10211353B2 (en)2008-04-142019-02-19Sunlight Photonics Inc.Aligned bifacial solar modules
US8110428B2 (en)*2008-11-252012-02-07Sunlight Photonics Inc.Thin-film photovoltaic devices
US20110108115A1 (en)*2009-11-112011-05-12International Business Machines CorporationForming a Photovoltaic Device
FR2955428B1 (en)*2010-01-152013-09-13Nexcis FABRICATION OF A MULTILAYER STRUCTURE FOR PHOTOVOLTAIC APPLICATIONS FROM IMPROVED ELECTROLYSIS CONDITIONS.
CN101937943A (en)*2010-08-302011-01-05浙江尚越光电科技有限公司Preparation method of thin-film solar cell absorption layer with gradient gallium-indium atomic ratio distribution
KR20140120011A (en)*2013-04-012014-10-13삼성에스디아이 주식회사Solar cell and manufacturing method thereof
CN108470783B (en)*2018-03-282020-12-01京东方科技集团股份有限公司 Photosensitive element and its manufacturing method, display panel and its manufacturing method

Citations (3)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
GB2006268A (en)*1977-10-141979-05-02Univ QueenslandPreparation of semiconductor films on electrically conductive substrates
US4425194A (en)*1976-06-081984-01-10Monosolar, Inc.Photo-voltaic power generating means and methods
WO2003043096A2 (en)*2001-11-102003-05-22Sheffield Hallam UniversityCopper-indium based thin film photovoltaic devices and methods of making the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US4425194A (en)*1976-06-081984-01-10Monosolar, Inc.Photo-voltaic power generating means and methods
GB2006268A (en)*1977-10-141979-05-02Univ QueenslandPreparation of semiconductor films on electrically conductive substrates
WO2003043096A2 (en)*2001-11-102003-05-22Sheffield Hallam UniversityCopper-indium based thin film photovoltaic devices and methods of making the same

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
INSPEC Abstract No 2388871 & Electrodeposition of CdTe thin films, J. Electrochem. Soc. Vol 131, No 9, pp 2032-2037, Battacharya & Rajeshwar.*
INSPEC Abstract No 3687659 & Crystal growth and photoelectrochemical characterization of Cd4BSe6 (B=Si or Ge), Berichte der Bunsengesellschaft fur Physikalische Chemie, Vol 94, No 1, pp 8-12, Jan 1990, Manivannan et al.*
INSPEC Abstract No 6122849 & Comparison of CdS thin films prepared by different techniques for applications in solar cells as window materials, J. Mat. Sci., Vol 9, No 3, pp 267-372, Oct 1998, Ileperuma et al.*

Also Published As

Publication numberPublication date
GB2400725A (en)2004-10-20
GB0308826D0 (en)2003-05-21

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Legal Events

DateCodeTitleDescription
PCNPPatent ceased through non-payment of renewal fee

Effective date:20130417


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