Movatterモバイル変換

[0]ホーム
URL:

GB2362031B - Flip-chip type semiconductor device with stress-absorbing layer made of thermosetting resin, and its manufacturing method - Google Patents

Flip-chip type semiconductor device with stress-absorbing layer made of thermosetting resin, and its manufacturing method

Info

Publication number
GB2362031B
GB2362031BGB0026926AGB0026926AGB2362031BGB 2362031 BGB2362031 BGB 2362031BGB 0026926 AGB0026926 AGB 0026926AGB 0026926 AGB0026926 AGB 0026926AGB 2362031 BGB2362031 BGB 2362031B
Authority
GB
United Kingdom
Prior art keywords
flip
semiconductor device
type semiconductor
thermosetting resin
chip type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GB0026926A
Other versions
GB0026926D0 (en
GB2362031A (en
Inventor
Hirokazu Honda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co LtdfiledCriticalNippon Electric Co Ltd
Priority to GB0227550ApriorityCriticalpatent/GB2385466A/en
Priority to GB0227548Aprioritypatent/GB2385465A/en
Publication of GB0026926D0publicationCriticalpatent/GB0026926D0/en
Publication of GB2362031ApublicationCriticalpatent/GB2362031A/en
Application grantedgrantedCritical
Publication of GB2362031BpublicationCriticalpatent/GB2362031B/en
Anticipated expirationlegal-statusCritical
Ceasedlegal-statusCriticalCurrent

Links

Classifications

Landscapes

Abstract

In a flip-chip type semiconductor device, a plurality of pad electrodes are formed on a semiconductor substrate. An insulating stress-absorbing resin layer made of thermosetting resin is adhered to the substrate as a composite layer in conjunction with a first conductive layer and has openings corresponding to the pad electrodes. A plurality of metal bumps are formed on the conductive layer.
GB0026926A1999-11-042000-11-03Flip-chip type semiconductor device with stress-absorbing layer made of thermosetting resin, and its manufacturing methodCeasedGB2362031B (en)

Priority Applications (2)

Application NumberPriority DateFiling DateTitle
GB0227550AGB2385466A (en)1999-11-042000-11-03Flip-chip device having stress absorbing layers and contacts
GB0227548AGB2385465A (en)1999-11-042000-11-03Flip-chip stress aborbing layers and connections

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
JP31368499AJP3450238B2 (en)1999-11-041999-11-04 Semiconductor device and manufacturing method thereof

Publications (3)

Publication NumberPublication Date
GB0026926D0 GB0026926D0 (en)2000-12-20
GB2362031A GB2362031A (en)2001-11-07
GB2362031Btrue GB2362031B (en)2002-11-27

Family

ID=18044278

Family Applications (1)

Application NumberTitlePriority DateFiling Date
GB0026926ACeasedGB2362031B (en)1999-11-042000-11-03Flip-chip type semiconductor device with stress-absorbing layer made of thermosetting resin, and its manufacturing method

Country Status (6)

CountryLink
US (2)US6696317B1 (en)
JP (1)JP3450238B2 (en)
KR (1)KR100425559B1 (en)
CN (1)CN1221026C (en)
GB (1)GB2362031B (en)
TW (1)TW477043B (en)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JP3842548B2 (en)2000-12-122006-11-08富士通株式会社 Semiconductor device manufacturing method and semiconductor device
US6646347B2 (en)*2001-11-302003-11-11Motorola, Inc.Semiconductor power device and method of formation
US20040102022A1 (en)*2002-11-222004-05-27Tongbi JiangMethods of fabricating integrated circuitry
US6992001B1 (en)*2003-05-082006-01-31Kulicke And Soffa Industries, Inc.Screen print under-bump metalization (UBM) to produce low cost flip chip substrate
JP2004349593A (en)*2003-05-262004-12-09Sanyo Electric Co LtdSemiconductor device and method for manufacturing the same
WO2005017968A2 (en)*2003-08-142005-02-24Advanced Interconnect Technologies LimitedSemiconductor device package and method for manufacturing same
JP2005142553A (en)*2003-10-152005-06-02Toshiba Corp Semiconductor device
TWI309456B (en)*2004-04-272009-05-01Advanced Semiconductor EngChip package structure and process for fabricating the same
US20060094225A1 (en)*2004-10-282006-05-04Cheng-Yuan LinMethods for forming solder bumps on circuit boards
KR20060087273A (en)*2005-01-282006-08-02삼성전기주식회사 Semiconductor package and manufacturing method
JP5100032B2 (en)*2005-06-272012-12-19ラピスセミコンダクタ株式会社 Substrate surface modification method and semiconductor device manufacturing method
JP4395775B2 (en)*2005-10-052010-01-13ソニー株式会社 Semiconductor device and manufacturing method thereof
WO2007085988A1 (en)*2006-01-242007-08-02Nxp B.V.Stress buffering package for a semiconductor component
KR100717909B1 (en)*2006-02-242007-05-14삼성전기주식회사 A substrate comprising a nickel layer and a method of manufacturing the same
DE102006036728B4 (en)*2006-08-052017-01-19Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for the electrical contacting of microelectronic components on a printed circuit board
JP5140961B2 (en)*2006-08-152013-02-13日本電気株式会社 Semiconductor device and manufacturing method thereof, and semiconductor device and manufacturing method thereof
JP2010541191A (en)*2007-07-262010-12-24エヌエックスピー ビー ヴィ Reinforcing structure of laminated body in semiconductor parts
US8350385B2 (en)*2007-07-302013-01-08Nxp B.V.Reduced bottom roughness of stress buffering element of a semiconductor component
JP5075611B2 (en)*2007-12-212012-11-21ローム株式会社 Semiconductor device
JP5386302B2 (en)*2009-10-272014-01-15ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method of semiconductor device
TWI441358B (en)*2012-01-122014-06-11Lextar Electronics CorpChip package structure and fabrication method thereof
KR101629273B1 (en)*2014-12-242016-06-14주식회사 에스에프에이반도체Bump structure on semiconductor connection pads and Method of forming the same
KR102170383B1 (en)*2018-12-272020-10-27주식회사 오킨스전자A device for flip-chip semiconductive magnetic sensor package and manufacturing method thereof
US10636696B1 (en)*2019-01-182020-04-28Applied Materials, Inc.Methods for forming vias in polymer layers
KR102564459B1 (en)*2019-05-092023-08-07현대자동차주식회사A structure of a spacer for double-side cooling power module and a method of manufacturing the spacer
JP7543712B2 (en)*2020-06-122024-09-03株式会社レゾナック Method for manufacturing semiconductor device

Citations (10)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US5682061A (en)*1990-09-241997-10-28Tessera, Inc.Component for connecting a semiconductor chip to a substrate
US5683942A (en)*1994-05-251997-11-04Nec CorporationMethod for manufacturing bump leaded film carrier type semiconductor device
WO1998025297A1 (en)*1996-12-041998-06-11Seiko Epson CorporationElectronic component and semiconductor device, method for manufacturing and mounting thereof, and circuit board and electronic equipment
WO1999017352A1 (en)*1997-09-301999-04-08Partnerships Limited, Inc.Method and compositions for metallizing microvias and high density interconnects in photodefined dielectrics
EP1043922A1 (en)*1997-12-292000-10-11Ibiden Co., Ltd.Multilayer printed wiring board
JP2001024021A (en)*1999-07-092001-01-26Hitachi Ltd Semiconductor device and manufacturing method thereof
US20010004134A1 (en)*1999-12-152001-06-21Kazuto SaitohElectronic device and method of producing same
US20010013425A1 (en)*1999-03-112001-08-16Shinko Electric Industries Co., Ltd.Multilayered Substrate for Semiconductor Device
EP1128431A2 (en)*2000-02-212001-08-29Nec CorporationFlip-chip type semiconductor device and method of manufacturing the same
US20010018986A1 (en)*2000-02-212001-09-06Akira NagaiResin compound, and adhesive film, metal-clad adhesive film, circuit board, and assembly structure, using the resin compound

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPH03119737A (en)1989-10-021991-05-22Fujitsu Ltd How to connect facing electrodes
US5074947A (en)1989-12-181991-12-24Epoxy Technology, Inc.Flip chip technology using electrically conductive polymers and dielectrics
JP3119737B2 (en)1991-08-162000-12-25旭硝子株式会社 Driving method and driving circuit for liquid crystal display element
JPH05275489A (en)1992-03-261993-10-22Hitachi Ltd Connection structure between electrodes
JP3057130B2 (en)*1993-02-182000-06-26三菱電機株式会社 Resin-sealed semiconductor package and method of manufacturing the same
JP3150253B2 (en)1994-07-222001-03-26三菱電機株式会社 Semiconductor device, its manufacturing method and mounting method
JP3569585B2 (en)1995-03-242004-09-22新光電気工業株式会社 Semiconductor device
JP3356921B2 (en)1995-03-242002-12-16新光電気工業株式会社 Semiconductor device and method of manufacturing the same
KR100218996B1 (en)1995-03-241999-09-01모기 쥰이찌 Semiconductor device
US5736790A (en)1995-09-211998-04-07Kabushiki Kaisha ToshibaSemiconductor chip, package and semiconductor device
JPH09148334A (en)1995-09-211997-06-06Toshiba Corp Bump, semiconductor chip and package having bump, mounting method, and semiconductor device
JP3311215B2 (en)1995-09-282002-08-05株式会社東芝 Semiconductor device
US5866949A (en)*1996-12-021999-02-02Minnesota Mining And Manufacturing CompanyChip scale ball grid array for integrated circuit packaging
JPH10303327A (en)1997-04-231998-11-13Yamaichi Electron Co Ltd Contact conversion structure of semiconductor chip and method of manufacturing semiconductor chip having the contact conversion structure
JP3351706B2 (en)*1997-05-142002-12-03株式会社東芝 Semiconductor device and method of manufacturing the same
JP3714444B2 (en)1997-07-232005-11-09新光電気工業株式会社 Semiconductor device and manufacturing method thereof
JPH1174309A (en)1997-08-271999-03-16Toshiba Corp Semiconductor device and manufacturing method thereof
JPH1197578A (en)*1997-09-221999-04-09Hitachi Ltd Semiconductor device and manufacturing method
JP3152180B2 (en)1997-10-032001-04-03日本電気株式会社 Semiconductor device and manufacturing method thereof
JPH11224885A (en)1998-02-061999-08-17Matsushita Electron CorpSemiconductor device
JP4416876B2 (en)1998-09-302010-02-17イビデン株式会社 Semiconductor chip and method for manufacturing semiconductor chip
JP2000269256A (en)1999-03-162000-09-29Hitachi Ltd Semiconductor device and manufacturing method thereof
JP2000349197A (en)1999-06-092000-12-15Matsushita Electric Ind Co Ltd Semiconductor wafer sealing substrate
JP2001028379A (en)1999-07-152001-01-30Asahi Chem Ind Co LtdSemiconductor device and manufacture thereof

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US5682061A (en)*1990-09-241997-10-28Tessera, Inc.Component for connecting a semiconductor chip to a substrate
US5683942A (en)*1994-05-251997-11-04Nec CorporationMethod for manufacturing bump leaded film carrier type semiconductor device
WO1998025297A1 (en)*1996-12-041998-06-11Seiko Epson CorporationElectronic component and semiconductor device, method for manufacturing and mounting thereof, and circuit board and electronic equipment
WO1999017352A1 (en)*1997-09-301999-04-08Partnerships Limited, Inc.Method and compositions for metallizing microvias and high density interconnects in photodefined dielectrics
EP1043922A1 (en)*1997-12-292000-10-11Ibiden Co., Ltd.Multilayer printed wiring board
US20010013425A1 (en)*1999-03-112001-08-16Shinko Electric Industries Co., Ltd.Multilayered Substrate for Semiconductor Device
JP2001024021A (en)*1999-07-092001-01-26Hitachi Ltd Semiconductor device and manufacturing method thereof
US20010004134A1 (en)*1999-12-152001-06-21Kazuto SaitohElectronic device and method of producing same
EP1128431A2 (en)*2000-02-212001-08-29Nec CorporationFlip-chip type semiconductor device and method of manufacturing the same
US20010018986A1 (en)*2000-02-212001-09-06Akira NagaiResin compound, and adhesive film, metal-clad adhesive film, circuit board, and assembly structure, using the resin compound

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IEEE Electronic components and Technology conf. 1993, Matsui et al, NEC Corporation, pp 205 - 210*
IEMT/IMC Proc."Advanced MCM-Ls for consumer Electronics"1998Amami et al, pp 249-254*

Also Published As

Publication numberPublication date
US6767761B2 (en)2004-07-27
GB0026926D0 (en)2000-12-20
KR20010060248A (en)2001-07-06
CN1295344A (en)2001-05-16
CN1221026C (en)2005-09-28
US6696317B1 (en)2004-02-24
JP3450238B2 (en)2003-09-22
US20040082101A1 (en)2004-04-29
TW477043B (en)2002-02-21
GB2362031A (en)2001-11-07
KR100425559B1 (en)2004-04-03
JP2001135663A (en)2001-05-18

Similar Documents

PublicationPublication DateTitle
GB2362031B (en)Flip-chip type semiconductor device with stress-absorbing layer made of thermosetting resin, and its manufacturing method
EP1251558A8 (en)Semiconductor device
EP1160856A3 (en)Flip chip type semiconductor device and method of manufacturing the same
TWI256719B (en)Semiconductor device package module and manufacturing method thereof
TW200504995A (en)Stacked chip semiconductor device and method for manufacturing the same
TW200620607A (en)Flip chip and wire bond semiconductor package
SG139753A1 (en)Semiconductor device
SG171655A1 (en)Semiconductor device and method of making integrated passive devices
MY118453A (en)Method of forming an electrode structure for a semiconductor device
SG142152A1 (en)Method of application of conductive cap-layer in flip-chip, cob, and micro metal bonding
TW200504952A (en)Method of manufacturing semiconductor package and method of manufacturing semiconductor device
TW200419762A (en)Bumpless chip package
TW369710B (en)Semiconductor apparatus and its producing method
WO2004061962A3 (en)Multi-layer integrated semiconductor structure
TW200501381A (en)Parasitic capacitance-preventing dummy solder bump structure and method of making the same
TW200620585A (en)Semiconductor package structure and method for fabricating the same
TW243550B (en)Semiconductor having a solder bump and process
WO2001003189A8 (en)Multichip module and method for producing a multichip module
EP1367645A3 (en)Semiconductor device and manufacturing method thereof
TW359747B (en)Improved IC package, IC prober and connector and method of forming the same
ATE481734T1 (en) SELECTIVE CONNECTION IN IC ENCAPSULATION
TW557520B (en)Semiconductor package module and process thereof
TW343377B (en)Via structure and production process thereof
TW200603300A (en)Chip structure
SG157220A1 (en)Method of manufacturing wafer level chip size package

Legal Events

DateCodeTitleDescription
732EAmendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
ATApplications terminated before publication under section 16(1)
[8]ページ先頭
©2009-2025 Movatter.jp