GB2343308B - Magnetic storage device - Google Patents

Magnetic storage device

Info

Publication number: GB2343308B
Authority: GB; United Kingdom
Prior art keywords: storage device; magnetic storage; magnetic; storage
Prior art date: 1998-10-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Inventor

Nikolai Franz Gregor Schwabe

Carsten Heide

Roger James Elliott

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Individual

Original Assignee

Individual

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1998-10-30

Filing date

1998-10-30

Publication date

2000-10-11

1998-10-30Application filed by IndividualfiledCriticalIndividual

1998-10-30Priority to GB9823694ApriorityCriticalpatent/GB2343308B/en

1998-12-23Publication of GB9823694D0publicationCriticalpatent/GB9823694D0/en

1999-11-02Priority to PCT/EP1999/008368prioritypatent/WO2000026918A1/en

2000-05-03Publication of GB2343308ApublicationCriticalpatent/GB2343308A/en

2000-10-11Application grantedgrantedCritical

2000-10-11Publication of GB2343308BpublicationCriticalpatent/GB2343308B/en

2003-02-12Priority to US10/364,655prioritypatent/US20040017721A1/en

2004-06-24Priority to US10/874,205prioritypatent/US7218550B2/en

2007-03-27Priority to US11/692,160prioritypatent/US7616478B2/en

2018-10-30Anticipated expirationlegal-statusCritical

StatusExpired - Lifetimelegal-statusCriticalCurrent

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements

Landscapes

Engineering & Computer Science (AREA)
Computer Hardware Design (AREA)
Mram Or Spin Memory Techniques (AREA)
Hall/Mr Elements (AREA)
Semiconductor Memories (AREA)

GB9823694A1998-10-301998-10-30Magnetic storage deviceExpired - LifetimeGB2343308B (en)

Priority Applications (5)

Application Number	Priority Date	Filing Date	Title
GB9823694AGB2343308B (en)	1998-10-30	1998-10-30	Magnetic storage device
PCT/EP1999/008368WO2000026918A1 (en)	1998-10-30	1999-11-02	Magnetic storage device
US10/364,655US20040017721A1 (en)	1998-10-30	2003-02-12	Magnetic storage device
US10/874,205US7218550B2 (en)	1998-10-30	2004-06-24	Magnetic storage device
US11/692,160US7616478B2 (en)	1998-10-30	2007-03-27	Magnetic storage device

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
GB9823694AGB2343308B (en)	1998-10-30	1998-10-30	Magnetic storage device

Publications (3)

Publication Number	Publication Date
GB9823694D0 GB9823694D0 (en)	1998-12-23
GB2343308A GB2343308A (en)	2000-05-03
GB2343308Btrue GB2343308B (en)	2000-10-11

Family

ID=10841512

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB9823694AExpired - LifetimeGB2343308B (en)	1998-10-30	1998-10-30	Magnetic storage device

Country Status (2)

Country	Link
GB (1)	GB2343308B (en)
WO (1)	WO2000026918A1 (en)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
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GB9921752D0 (en)*	1999-09-15	1999-11-17	Wang Frank Z	Diode-free cross-point array architecture for magnetic random access memories
US6727105B1 (en)*	2000-02-28	2004-04-27	Hewlett-Packard Development Company, L.P.	Method of fabricating an MRAM device including spin dependent tunneling junction memory cells
JP2002025245A (en)*	2000-06-30	2002-01-25	Nec Corp	Nonvolatile semiconductor storage device and information recording method
CN100367528C (en)	2001-05-07	2008-02-06	先进微装置公司	Switching device with memory effect
KR100900080B1 (en)	2001-05-07	2009-06-01	어드밴스드 마이크로 디바이시즈, 인코포레이티드	Memory device having self-assembled polymer film and manufacturing method thereof
DE60233486D1 (en)	2001-05-07	2009-10-08	Advanced Micro Devices Inc	FLOATING GATE MEMORY BUILDING PART USING COMPOUND MOLECULAR MATERIAL
WO2002091495A2 (en)	2001-05-07	2002-11-14	Coatue Corporation	Molecular memory device
WO2002091496A2 (en)	2001-05-07	2002-11-14	Advanced Micro Devices, Inc.	Reversible field-programmable electric interconnects
US6873540B2 (en)	2001-05-07	2005-03-29	Advanced Micro Devices, Inc.	Molecular memory cell
US7220498B2 (en)*	2001-05-31	2007-05-22	National Institute Of Advanced Industrial Science And Technology	Tunnel magnetoresistance element
JP2002359413A (en)*	2001-05-31	2002-12-13	National Institute Of Advanced Industrial & Technology	Ferromagnetic tunnel magnetoresistive element
CN1535467B (en)*	2001-06-20	2010-04-28	因芬尼昂技术北美公司	Memory device, method of manufacturing the same, and method of programming the same
US6838720B2 (en)	2001-08-13	2005-01-04	Advanced Micro Devices, Inc.	Memory device with active passive layers
US6768157B2 (en)	2001-08-13	2004-07-27	Advanced Micro Devices, Inc.	Memory device
US6806526B2 (en)	2001-08-13	2004-10-19	Advanced Micro Devices, Inc.	Memory device
WO2003017282A1 (en)	2001-08-13	2003-02-27	Advanced Micro Devices, Inc.	Memory cell
US6858481B2 (en)	2001-08-13	2005-02-22	Advanced Micro Devices, Inc.	Memory device with active and passive layers
FR2829868A1 (en)	2001-09-20	2003-03-21	Centre Nat Rech Scient	MAGNETIC MEMORY WITH WRITING BY POLARIZED CURRENT IN SPIN, IMPLEMENTING FERRIMAGNETIC AMORPHOUS ALLOYS AND METHOD FOR WRITING SAME
US20030218905A1 (en)*	2002-05-22	2003-11-27	Perner Frederick A.	Equi-potential sensing magnetic random access memory (MRAM) with series diodes
US7012276B2 (en)	2002-09-17	2006-03-14	Advanced Micro Devices, Inc.	Organic thin film Zener diodes
US6639830B1 (en)	2002-10-22	2003-10-28	Btg International Ltd.	Magnetic memory device
US6775183B2 (en)	2002-10-22	2004-08-10	Btg International Ltd.	Magnetic memory device employing giant magnetoresistance effect
EP1556862A2 (en)*	2002-10-22	2005-07-27	Btg International Limited	Magnetic memory device
JP2005064050A (en)*	2003-08-14	2005-03-10	Toshiba Corp	Semiconductor memory device and data writing method thereof
US9007818B2 (en)	2012-03-22	2015-04-14	Micron Technology, Inc.	Memory cells, semiconductor device structures, systems including such cells, and methods of fabrication
US8923038B2 (en)	2012-06-19	2014-12-30	Micron Technology, Inc.	Memory cells, semiconductor device structures, memory systems, and methods of fabrication
US9054030B2 (en)	2012-06-19	2015-06-09	Micron Technology, Inc.	Memory cells, semiconductor device structures, memory systems, and methods of fabrication
US9379315B2 (en)	2013-03-12	2016-06-28	Micron Technology, Inc.	Memory cells, methods of fabrication, semiconductor device structures, and memory systems
US9368714B2 (en)	2013-07-01	2016-06-14	Micron Technology, Inc.	Memory cells, methods of operation and fabrication, semiconductor device structures, and memory systems
US9466787B2 (en)	2013-07-23	2016-10-11	Micron Technology, Inc.	Memory cells, methods of fabrication, semiconductor device structures, memory systems, and electronic systems
US9461242B2 (en)	2013-09-13	2016-10-04	Micron Technology, Inc.	Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems
US9608197B2 (en)	2013-09-18	2017-03-28	Micron Technology, Inc.	Memory cells, methods of fabrication, and semiconductor devices
US10454024B2 (en)	2014-02-28	2019-10-22	Micron Technology, Inc.	Memory cells, methods of fabrication, and memory devices
US9281466B2 (en)	2014-04-09	2016-03-08	Micron Technology, Inc.	Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication
US9269888B2 (en)	2014-04-18	2016-02-23	Micron Technology, Inc.	Memory cells, methods of fabrication, and semiconductor devices
US9349945B2 (en)	2014-10-16	2016-05-24	Micron Technology, Inc.	Memory cells, semiconductor devices, and methods of fabrication
US9768377B2 (en)	2014-12-02	2017-09-19	Micron Technology, Inc.	Magnetic cell structures, and methods of fabrication
US10439131B2 (en)	2015-01-15	2019-10-08	Micron Technology, Inc.	Methods of forming semiconductor devices including tunnel barrier materials

Citations (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB932146A (en)*	1961-01-25	1963-07-24	Siemens Ag	Improvements in or relating to insulating layers
GB1124340A (en)*	1964-11-20	1968-08-21	Tokyo Shibaura Electric Co	Magnetic film memory device
GB1237904A (en)*	1967-06-16	1971-07-07
US4731757A (en)*	1986-06-27	1988-03-15	Honeywell Inc.	Magnetoresistive memory including thin film storage cells having tapered ends
US4780848A (en)*	1986-06-03	1988-10-25	Honeywell Inc.	Magnetoresistive memory with multi-layer storage cells having layers of limited thickness
US5173873A (en)*	1990-06-28	1992-12-22	The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration	High speed magneto-resistive random access memory
WO1995022820A1 (en)*	1994-02-21	1995-08-24	Philips Electronics N.V.	A method and a device for locally altering the magnetization direction in a body of magnetic material
WO1996011469A1 (en)*	1994-10-05	1996-04-18	Philips Electronics N.V.	Magnetic multilayer device including a resonant-tunneling double-barrier structure
US5640343A (en)*	1996-03-18	1997-06-17	International Business Machines Corporation	Magnetic memory array using magnetic tunnel junction devices in the memory cells
EP0780912A1 (en)*	1995-12-19	1997-06-25	Matsushita Electric Industrial Co., Ltd.	Magnetoresistance element, magnetoresistive head and magnetoresistive memory
US5650958A (en)*	1996-03-18	1997-07-22	International Business Machines Corporation	Magnetic tunnel junctions with controlled magnetic response
US5734605A (en)*	1996-09-10	1998-03-31	Motorola, Inc.	Multi-layer magnetic tunneling junction memory cells
US5764567A (en)*	1996-11-27	1998-06-09	International Business Machines Corporation	Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response
US5801984A (en)*	1996-11-27	1998-09-01	International Business Machines Corporation	Magnetic tunnel junction device with ferromagnetic multilayer having fixed magnetic moment

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5835314A (en)*	1996-04-17	1998-11-10	Massachusetts Institute Of Technology	Tunnel junction device for storage and switching of signals

1998
- 1998-10-30GBGB9823694Apatent/GB2343308B/ennot_activeExpired - Lifetime
1999
- 1999-11-02WOPCT/EP1999/008368patent/WO2000026918A1/enactiveApplication Filing

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB932146A (en)*	1961-01-25	1963-07-24	Siemens Ag	Improvements in or relating to insulating layers
GB1124340A (en)*	1964-11-20	1968-08-21	Tokyo Shibaura Electric Co	Magnetic film memory device
GB1237904A (en)*	1967-06-16	1971-07-07
US4780848A (en)*	1986-06-03	1988-10-25	Honeywell Inc.	Magnetoresistive memory with multi-layer storage cells having layers of limited thickness
US4731757A (en)*	1986-06-27	1988-03-15	Honeywell Inc.	Magnetoresistive memory including thin film storage cells having tapered ends
US5173873A (en)*	1990-06-28	1992-12-22	The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration	High speed magneto-resistive random access memory
WO1995022820A1 (en)*	1994-02-21	1995-08-24	Philips Electronics N.V.	A method and a device for locally altering the magnetization direction in a body of magnetic material
WO1996011469A1 (en)*	1994-10-05	1996-04-18	Philips Electronics N.V.	Magnetic multilayer device including a resonant-tunneling double-barrier structure
EP0780912A1 (en)*	1995-12-19	1997-06-25	Matsushita Electric Industrial Co., Ltd.	Magnetoresistance element, magnetoresistive head and magnetoresistive memory
US5640343A (en)*	1996-03-18	1997-06-17	International Business Machines Corporation	Magnetic memory array using magnetic tunnel junction devices in the memory cells
US5650958A (en)*	1996-03-18	1997-07-22	International Business Machines Corporation	Magnetic tunnel junctions with controlled magnetic response
US5734605A (en)*	1996-09-10	1998-03-31	Motorola, Inc.	Multi-layer magnetic tunneling junction memory cells
US5764567A (en)*	1996-11-27	1998-06-09	International Business Machines Corporation	Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response
US5801984A (en)*	1996-11-27	1998-09-01	International Business Machines Corporation	Magnetic tunnel junction device with ferromagnetic multilayer having fixed magnetic moment

Also Published As

Publication number	Publication date
GB2343308A (en)	2000-05-03
GB9823694D0 (en)	1998-12-23
WO2000026918A1 (en)	2000-05-11

Publication	Publication Date	Title
GB2343308B (en)	2000-10-11	Magnetic storage device
GB2348923B (en)	2002-10-09	Magnetic lock device
TW445021U (en)	2001-07-01	Magnetic holding device
PL351942A1 (en)	2003-07-14	Storage device
GB2333090B (en)	2001-10-24	Storage
GB2357425B (en)	2002-03-20	Storage device
GB9825675D0 (en)	1999-01-20	Magnetic holding device
SG82043A1 (en)	2001-07-24	Magnetic recording device
SG90075A1 (en)	2002-07-23	Magnetic head device
EP0984447A4 (en)	2002-08-28	Magnetic recording device
GB9712975D0 (en)	1997-08-27	Magnetic reading devices
GB2337248B (en)	2000-03-29	Reel device
EP0984449A4 (en)	2000-05-03	Magnetic recording device
EP1014376A4 (en)	2001-05-23	Magnetic recording device
GB2340734B (en)	2001-11-21	Storage device
GB2338183B (en)	2002-06-19	Storage facility
TW428480U (en)	2001-04-01	Magnetic palm-shape work-exerting device
GB9816370D0 (en)	1998-09-23	Storage device
GB9815616D0 (en)	1998-09-16	Storage device
GB9802146D0 (en)	1998-04-01	Storage device
AU136595S (en)	1999-03-03	Storage device
TW391552U (en)	2000-05-21	Magnetic device design
GB9817020D0 (en)	1998-09-30	Improved information storage device
GB9908131D0 (en)	1999-06-02	Improved information storage device
HUP0101989A3 (en)	2002-12-28	Playback device

Legal Events

Date	Code	Title	Description
2002-03-13	732E	Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
2005-03-15	732E	Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
2009-06-17	732E	Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)	Free format text:REGISTERED BETWEEN 20090521 AND 20090527
2009-06-24	732E	Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)	Free format text:REGISTERED BETWEEN 20090528 AND 20090603
2015-11-18	746	Register noted 'licences of right' (sect. 46/1977)	Effective date:20150420
2018-11-21	PE20	Patent expired after termination of 20 years	Expiry date:20181029

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