| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| FR7324321AFR2238251B1 (en) | 1973-07-03 | 1973-07-03 | 
| Publication Number | Publication Date | 
|---|---|
| GB1470241Atrue GB1470241A (en) | 1977-04-14 | 
| Application Number | Title | Priority Date | Filing Date | 
|---|---|---|---|
| GB2921074AExpiredGB1470241A (en) | 1973-07-03 | 1974-07-02 | Photocells | 
| Country | Link | 
|---|---|
| JP (1) | JPS5135838B2 (en) | 
| DE (1) | DE2425908A1 (en) | 
| FR (1) | FR2238251B1 (en) | 
| GB (1) | GB1470241A (en) | 
| NL (1) | NL7408594A (en) | 
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| WO1998028798A1 (en)* | 1996-12-24 | 1998-07-02 | Imec Vzw | Semiconductor device with selectively diffused regions | 
| US6552414B1 (en) | 1996-12-24 | 2003-04-22 | Imec Vzw | Semiconductor device with selectively diffused regions | 
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| US4152824A (en)* | 1977-12-30 | 1979-05-08 | Mobil Tyco Solar Energy Corporation | Manufacture of solar cells | 
| GB8423558D0 (en)* | 1984-09-18 | 1984-10-24 | Secr Defence | Semi-conductor solar cells | 
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| WO1998028798A1 (en)* | 1996-12-24 | 1998-07-02 | Imec Vzw | Semiconductor device with selectively diffused regions | 
| US6552414B1 (en) | 1996-12-24 | 2003-04-22 | Imec Vzw | Semiconductor device with selectively diffused regions | 
| US6825104B2 (en) | 1996-12-24 | 2004-11-30 | Interuniversitair Micro-Elektronica Centrum (Imec) | Semiconductor device with selectively diffused regions | 
| Publication number | Publication date | 
|---|---|
| DE2425908A1 (en) | 1975-01-09 | 
| JPS5135838B2 (en) | 1976-10-05 | 
| FR2238251A1 (en) | 1975-02-14 | 
| FR2238251B1 (en) | 1977-09-16 | 
| JPS5039483A (en) | 1975-04-11 | 
| NL7408594A (en) | 1975-01-07 | 
| Publication | Publication Date | Title | 
|---|---|---|
| IT1051934B (en) | ELECTROCHEMISTRY CELL WITH BIPOLAR ELECTRODES | |
| GB1313829A (en) | Transistors and aproduction thereof | |
| JPS56125871A (en) | Transistor | |
| GB1470241A (en) | Photocells | |
| GB1485994A (en) | Thyristors | |
| ES424353A1 (en) | Variable light transmission device containing ferrous ammonium sulfate as an auxiliary redox system | |
| Agrinskaya et al. | Behaviour of Cl in Heavily Doped CdTe Crystals | |
| ES486588A1 (en) | Double diffused transistor structure and method of making same. | |
| CA1024335A (en) | Active electrode composition and electrode | |
| JPS5793584A (en) | Semiconductor photoreceiving element | |
| EP0269510A3 (en) | Improved structure for hall device | |
| GB1521341A (en) | Charge-coupled arrangements | |
| GB1322110A (en) | Charge-coupled device | |
| JPS5274280A (en) | Semiconductor device and its production | |
| JPS56126971A (en) | Thin film field effect element | |
| JPS5215253A (en) | Semiconductor amplifier | |
| JPS567475A (en) | Semiconductor device | |
| JPS5220769A (en) | Longitudinal semi-conductor unit | |
| JPS643630A (en) | Electro-optic device | |
| GB1490971A (en) | Devices | |
| JPS51121291A (en) | Display deivce | |
| JPS5352376A (en) | Production of field effect type semiconductor device | |
| JPS6459327A (en) | Active device | |
| Uscki | On exact modules over a commutative exact ring | |
| JPS5717185A (en) | Photosensor | 
| Date | Code | Title | Description | 
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |