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GB1358411A - Sputtering - Google Patents

Sputtering

Info

Publication number
GB1358411A
GB1358411AGB3993771AGB3993771AGB1358411AGB 1358411 AGB1358411 AGB 1358411AGB 3993771 AGB3993771 AGB 3993771AGB 3993771 AGB3993771 AGB 3993771AGB 1358411 AGB1358411 AGB 1358411A
Authority
GB
United Kingdom
Prior art keywords
substrate
work
sputtering
field
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3993771A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ELECTRICAL RES ASS
Original Assignee
ELECTRICAL RES ASS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ELECTRICAL RES ASSfiledCriticalELECTRICAL RES ASS
Priority to GB3993771ApriorityCriticalpatent/GB1358411A/en
Publication of GB1358411ApublicationCriticalpatent/GB1358411A/en
Expiredlegal-statusCriticalCurrent

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Abstract

1358411 Cathodic sputtering ELECTRICAL RESEARCH ASSOCIATION Ltd 2 Nov 1972 [25 Aug 1971] 39937/71 Heading C7F In a method of sputtering material from a target electrode onto a substrate on a worktable 4 constituting a second electrode, a relatively weak magnetic field A is applied (e.g. by an electromagnet) along the common axis of target and work-table, and a relatively strong localised field L is applied in the region of work-table 4 so as to form a closed loop enclosing at least a portion of the work-table and to divert electrons away from the portion enclosed by the loop, and the substrate is located on this said portion. The field L may be generated by a horseshoe magnet 16 as shown so that electrons strike region 20, whereby heating of the substrate is avoided; sputtering is in inert gas, e.g. Ar, and may be D.C. or R.F.
GB3993771A1972-11-021972-11-02SputteringExpiredGB1358411A (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
GB3993771AGB1358411A (en)1972-11-021972-11-02Sputtering

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
GB3993771AGB1358411A (en)1972-11-021972-11-02Sputtering

Publications (1)

Publication NumberPublication Date
GB1358411Atrue GB1358411A (en)1974-07-03

Family

ID=10412310

Family Applications (1)

Application NumberTitlePriority DateFiling Date
GB3993771AExpiredGB1358411A (en)1972-11-021972-11-02Sputtering

Country Status (1)

CountryLink
GB (1)GB1358411A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US4025410A (en)*1975-08-251977-05-24Western Electric Company, Inc.Sputtering apparatus and methods using a magnetic field
US4046660A (en)*1975-12-291977-09-06Bell Telephone Laboratories, IncorporatedSputter coating with charged particle flux control
US4060470A (en)*1974-12-061977-11-29Clarke Peter JSputtering apparatus and method
US4301440A (en)*1978-12-051981-11-17Nissan Motor Co., Ltd.Level detecting device
GB2119817A (en)*1982-05-121983-11-23Dowty Electronics LtdVacuum deposition apparatus
US4525262A (en)*1982-01-261985-06-25Materials Research CorporationMagnetron reactive bias sputtering method and apparatus
GB2191787A (en)*1986-06-231987-12-23Balzers HochvakuumProcess and arrangement for sputtering a material by means of high frequency
US4871433A (en)*1986-04-041989-10-03Materials Research CorporationMethod and apparatus for improving the uniformity ion bombardment in a magnetron sputtering system
GB2211861B (en)*1987-10-301992-01-29Pioneer Electronic CorpPhotomagnetic memory medium having a non-columnar structure
DE4022708A1 (en)*1990-07-171992-04-02Balzers Hochvakuum ETCHING OR COATING PLANTS
DE4042417A1 (en)*1990-07-171992-05-14Balzers HochvakuumEtching or coating appts. with divided chamber wall

Cited By (15)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US4060470A (en)*1974-12-061977-11-29Clarke Peter JSputtering apparatus and method
US4025410A (en)*1975-08-251977-05-24Western Electric Company, Inc.Sputtering apparatus and methods using a magnetic field
US4046660A (en)*1975-12-291977-09-06Bell Telephone Laboratories, IncorporatedSputter coating with charged particle flux control
US4301440A (en)*1978-12-051981-11-17Nissan Motor Co., Ltd.Level detecting device
US4525262A (en)*1982-01-261985-06-25Materials Research CorporationMagnetron reactive bias sputtering method and apparatus
GB2119817A (en)*1982-05-121983-11-23Dowty Electronics LtdVacuum deposition apparatus
US4871433A (en)*1986-04-041989-10-03Materials Research CorporationMethod and apparatus for improving the uniformity ion bombardment in a magnetron sputtering system
GB2191787A (en)*1986-06-231987-12-23Balzers HochvakuumProcess and arrangement for sputtering a material by means of high frequency
DE3706698A1 (en)*1986-06-231988-01-14Balzers Hochvakuum METHOD AND ARRANGEMENT FOR SPRAYING A MATERIAL AT HIGH FREQUENCY
GB2191787B (en)*1986-06-231991-03-13Balzers HochvakuumProcess and arrangement for sputtering a material by means of high frequency
GB2211861B (en)*1987-10-301992-01-29Pioneer Electronic CorpPhotomagnetic memory medium having a non-columnar structure
US5135819A (en)*1987-10-301992-08-04Pioneer Electronic CorporationPhotomagnetic memory medium having a non-columnar structure
DE4022708A1 (en)*1990-07-171992-04-02Balzers Hochvakuum ETCHING OR COATING PLANTS
DE4042417A1 (en)*1990-07-171992-05-14Balzers HochvakuumEtching or coating appts. with divided chamber wall
US5460707A (en)*1990-07-171995-10-24Balzers AktiengesellschaftEtching or coating method and a plant therefor

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Legal Events

DateCodeTitleDescription
PSPatent sealed
PLNPPatent lapsed through nonpayment of renewal fees
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