GB1346938A - Reactors and method of manufacture of semiconductor devices using such a reactor - Google Patents

Abstract

1346938 Gas/solid contact; decomposing gases PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 19 April 1971 [11 March 1970] 23376/71 Heading B1F [Also in Division C1] Semiconductor material is deposited on substrates 4 from gas flowing as at 5 through tube 2 which gradually narrows as at 6, the substrates being heated through susceptors 21 by high frequency inductions coil 3. The susceptor may consist of graphite with a surface of silicon carbide. The substrates 4 may be silicon and silicon may be epitaxially deposited from a hydrogen stream containing SiH 4 or SiHCl 3 , or silicon nitride may be deposited. Polycrystalline layers may be deposited. Etching processes on substrates using an etchant gas may also be carried out. The substrates may be continually passed through the tube during deposition. The process condition may satisfy the following relationship: wherein V o is the rate of flow of the gas stream in cms/sec at N.T.P. at the part of tube 2 where the process begins to take place, T s is the temperature in degrees K of the substrate, T m is the temperature in degrees K of the gas in the tube portion for the performance of the process, b is the distance in cms between the susceptor 21 and the top inner surface of the part of the tube 2 where the process begins to take place, and D o is the diffusion coefficient in sq. cms/sec of the compound in the gas stream which diffuses the slowest, and Ï is the angle at which the top and bottom surface of the tube 2 approach each other.