GB1297899A - - Google Patents

Abstract

1297899 Semi-conductor devices INTERNATIONAL BUSINESS MACHINES CORP 28 May 1971 [2 Oct 1970] 17806/71 Heading H1K The device shown is a variable-threshold IGFET making use of trapping of non-interacting particles 3 in the gate insulation; charge reaches these traps by tunnelling from the semiconductor body 1 through the inner insulating layer 2. In a variant the diffused source and drain regions 8 and their associated ohmic contacts 9 are replaced by Schottky barrier contacts. In other variants the source and drain are not provided and the devices function as voltage-variable capacitors with high hysteresis. Suitable semi-conductors include silicon, germanium, and gallium arsenide. The insulators include aluminium oxide, magnesium oxide, oxides, nitrides, tellurides, chlorides, selenides and fluorides of semi-conductor elements, and phosphosilicate glass; and ceramic or organic materials may be used for the outer insulating layer 5. The trapping particles may be particles of metals or semi-conductors or may be, particularly if a homogeneous insulation 2, 9 is employed, non-interacting groups of implanted ions.