GB1291357A - Improvements in or relating to radiation heated reactors - Google Patents

Abstract

1291357 Growing epitaxial films APPLIED MATERIALS TECHNOLOGY Inc 3 Nov 1970 52138/70 Heading C1A [Also in Divisions C7 and H5] A furnace for the vapour deposition of epitaxial, polycrystalline or amorphous films on substrates, e.g. silicon wafer substrates, comprises a reaction chamber 31 to which vapour reactants can be introduced at 32, 33 for deposition on wafers 43, and a radiant heater 12 producing radiant heat at a wavelength of 1 micron or less (e.g. a filament temperature of 5000-6000‹ F.), positioned adjacent a part of the chamber wall which is transparent to the radiant heat. As shown the wafers 43 are supported by a graphite member 42 which absorbs radiant heat and ensures uniform heating and the transparent part of the reaction chamber 31 is made of quartz. Silicon epitaxial growth may be obtained by pyrolysis of SiH 4 or SiCl 4 (in the presence of hydrogen) at 900-1200‹ C. Silicon nitride may be deposited from NH 3 and SiH 4 or SiCl 4 ; silica may be deposited from H 2 and CO 2 and SiH 4 or SiCl 4 at 800- 1100‹ C. or from SiH 4 and O 2 at 300-500‹ C.