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GB1084937A - Transistors - Google Patents

Transistors

Info

Publication number
GB1084937A
GB1084937AGB27106/66AGB2710666AGB1084937AGB 1084937 AGB1084937 AGB 1084937AGB 27106/66 AGB27106/66 AGB 27106/66AGB 2710666 AGB2710666 AGB 2710666AGB 1084937 AGB1084937 AGB 1084937A
Authority
GB
United Kingdom
Prior art keywords
type
layers
field effect
effect transistors
slice
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB27106/66A
Inventor
Roger Cullis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB13629/65Aexternal-prioritypatent/GB1045429A/en
Application filed by Standard Telephone and Cables PLCfiledCriticalStandard Telephone and Cables PLC
Priority to GB27106/66ApriorityCriticalpatent/GB1084937A/en
Priority to US636161Aprioritypatent/US3518509A/en
Priority to DE1589687Aprioritypatent/DE1589687C3/en
Priority to BE700017Dprioritypatent/BE700017A/xx
Priority to FR110769Aprioritypatent/FR93427E/en
Priority to NL6708379Aprioritypatent/NL6708379A/xx
Priority to ES341949Aprioritypatent/ES341949A1/en
Priority to SE08667/67Aprioritypatent/SE340319B/xx
Publication of GB1084937ApublicationCriticalpatent/GB1084937A/en
Expiredlegal-statusCriticalCurrent

Links

Classifications

Landscapes

Abstract

1,084,937. Field effect transistors. STANDARD TELEPHONES & CABLES Ltd. June 17, 1966, No. 27106/66. Addition to 1,045,429. Heading H1K. A semi-conductor slice includes at least two insulated gate field effect transistors having source-drain channels extending across the thickness of epitaxial layers of unlike conductivity types respectively. In the embodiment, boron is diffused into a portion of an N-type, 2 ohm-cm. silicon slice 1 and then three layers of P, N and P type respectively are epitaxially deposited on the slice. Photoetching, masking and deposition techniques are used to provide a first pair of metallic connections (aluminium) S and D to the first and third P-type layers and a second pair of metallic contacts S and D to the substrate and second N-type layers. Gate metallic electrodes G are provided to act as control electrodes insulated by a thin oxide layer in each case, from the second N-type and first P-type layers respectively. Thus a PNP and an NPN field effect transistors are provided. Silicon oxide or silicon nitride may be used as the dielectric.
GB27106/66A1965-03-311966-06-17TransistorsExpiredGB1084937A (en)

Priority Applications (8)

Application NumberPriority DateFiling DateTitle
GB27106/66AGB1084937A (en)1965-03-311966-06-17Transistors
US636161AUS3518509A (en)1966-06-171967-05-04Complementary field-effect transistors on common substrate by multiple epitaxy techniques
DE1589687ADE1589687C3 (en)1965-03-311967-06-01 Solid-state circuit with isolated field effect transistors and process for their manufacture
BE700017DBE700017A (en)1965-03-311967-06-16
FR110769AFR93427E (en)1965-03-311967-06-16 Field effect transistors.
NL6708379ANL6708379A (en)1966-06-171967-06-16
ES341949AES341949A1 (en)1966-06-171967-06-17 IMPROVEMENTS IN A TRANSISTOR AND IN THE METHOD OF MANUFACTURING IT.
SE08667/67ASE340319B (en)1966-06-171967-06-19

Applications Claiming Priority (2)

Application NumberPriority DateFiling DateTitle
GB13629/65AGB1045429A (en)1965-03-311965-03-31Transistors
GB27106/66AGB1084937A (en)1965-03-311966-06-17Transistors

Publications (1)

Publication NumberPublication Date
GB1084937Atrue GB1084937A (en)1967-09-27

Family

ID=32095213

Family Applications (1)

Application NumberTitlePriority DateFiling Date
GB27106/66AExpiredGB1084937A (en)1965-03-311966-06-17Transistors

Country Status (4)

CountryLink
BE (1)BE700017A (en)
DE (1)DE1589687C3 (en)
FR (1)FR93427E (en)
GB (1)GB1084937A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
DE2820331A1 (en)*1978-05-101979-11-15Ernst Prof Dr Ing LuederThin film FET prodn. using tantalum pent:oxide as gate oxide - by anodic oxidn. of doped tantalum gate electrode giving high transconductance
EP0166003A4 (en)*1983-12-161987-06-29Hitachi Ltd INTEGRATED SEMICONDUCTOR CIRCUIT.
US4713678A (en)*1984-12-071987-12-15Texas Instruments IncorporateddRAM cell and method
US4797373A (en)*1984-10-311989-01-10Texas Instruments IncorporatedMethod of making dRAM cell with trench capacitor
US4824793A (en)*1984-09-271989-04-25Texas Instruments IncorporatedMethod of making DRAM cell with trench capacitor
US4829017A (en)*1986-09-251989-05-09Texas Instruments IncorporatedMethod for lubricating a high capacity dram cell
US4845051A (en)*1987-10-291989-07-04Siliconix IncorporatedBuried gate JFET
US4890145A (en)*1984-08-311989-12-26Texas Instruments IncorporateddRAM cell and array
US5102817A (en)*1985-03-211992-04-07Texas Instruments IncorporatedVertical DRAM cell and method
US5105245A (en)*1988-06-281992-04-14Texas Instruments IncorporatedTrench capacitor DRAM cell with diffused bit lines adjacent to a trench
US5109259A (en)*1987-09-221992-04-28Texas Instruments IncorporatedMultiple DRAM cells in a trench
US5208657A (en)*1984-08-311993-05-04Texas Instruments IncorporatedDRAM Cell with trench capacitor and vertical channel in substrate
US5225363A (en)*1988-06-281993-07-06Texas Instruments IncorporatedTrench capacitor DRAM cell and method of manufacture

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
CA1049127A (en)*1974-03-051979-02-20Kunio ItohSemiconductor devices with improved heat radiation and current concentration
JPS5811102B2 (en)*1975-12-091983-03-01ザイダンホウジン ハンドウタイケンキユウシンコウカイ semiconductor integrated circuit
US5140388A (en)*1991-03-221992-08-18Hewlett-Packard CompanyVertical metal-oxide semiconductor devices
US5283456A (en)*1992-06-171994-02-01International Business Machines CorporationVertical gate transistor with low temperature epitaxial channel

Cited By (13)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
DE2820331A1 (en)*1978-05-101979-11-15Ernst Prof Dr Ing LuederThin film FET prodn. using tantalum pent:oxide as gate oxide - by anodic oxidn. of doped tantalum gate electrode giving high transconductance
EP0166003A4 (en)*1983-12-161987-06-29Hitachi Ltd INTEGRATED SEMICONDUCTOR CIRCUIT.
US4890145A (en)*1984-08-311989-12-26Texas Instruments IncorporateddRAM cell and array
US5208657A (en)*1984-08-311993-05-04Texas Instruments IncorporatedDRAM Cell with trench capacitor and vertical channel in substrate
US4824793A (en)*1984-09-271989-04-25Texas Instruments IncorporatedMethod of making DRAM cell with trench capacitor
US4797373A (en)*1984-10-311989-01-10Texas Instruments IncorporatedMethod of making dRAM cell with trench capacitor
US4713678A (en)*1984-12-071987-12-15Texas Instruments IncorporateddRAM cell and method
US5102817A (en)*1985-03-211992-04-07Texas Instruments IncorporatedVertical DRAM cell and method
US4829017A (en)*1986-09-251989-05-09Texas Instruments IncorporatedMethod for lubricating a high capacity dram cell
US5109259A (en)*1987-09-221992-04-28Texas Instruments IncorporatedMultiple DRAM cells in a trench
US4845051A (en)*1987-10-291989-07-04Siliconix IncorporatedBuried gate JFET
US5105245A (en)*1988-06-281992-04-14Texas Instruments IncorporatedTrench capacitor DRAM cell with diffused bit lines adjacent to a trench
US5225363A (en)*1988-06-281993-07-06Texas Instruments IncorporatedTrench capacitor DRAM cell and method of manufacture

Also Published As

Publication numberPublication date
DE1589687A1 (en)1970-05-27
DE1589687C3 (en)1974-12-19
FR93427E (en)1969-03-28
BE700017A (en)1967-12-18
DE1589687B2 (en)1974-05-16

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