| US3880396A (en)* | 1973-10-25 | 1975-04-29 | Eaton Corp | Quick change panel fastening system |
| JPS6056431B2 (en)* | 1980-10-09 | 1985-12-10 | 三菱電機株式会社 | plasma etching equipment |
| US4439463A (en)* | 1982-02-18 | 1984-03-27 | Atlantic Richfield Company | Plasma assisted deposition system |
| ATE72142T1 (en)* | 1986-09-12 | 1992-02-15 | Memtec Ltd | HOLLOW FIBER FILTER CARTRIDGE AND DISTRIBUTOR. |
| JP2677418B2 (en)* | 1989-06-22 | 1997-11-17 | 富士通株式会社 | ATM switch system switching method |
| DE4007123A1 (en)* | 1990-03-07 | 1991-09-12 | Siegfried Dipl Ing Dr Straemke | Plasma treatment appts. - has working vessel with vacuum sealed vessel with evacuation of the intermediate zone |
| US20020004309A1 (en)* | 1990-07-31 | 2002-01-10 | Kenneth S. Collins | Processes used in an inductively coupled plasma reactor |
| US6518195B1 (en)* | 1991-06-27 | 2003-02-11 | Applied Materials, Inc. | Plasma reactor using inductive RF coupling, and processes |
| US6063233A (en)* | 1991-06-27 | 2000-05-16 | Applied Materials, Inc. | Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna |
| DE4241045C1 (en)* | 1992-12-05 | 1994-05-26 | Bosch Gmbh Robert | Process for anisotropic etching of silicon |
| US5328556A (en)* | 1992-12-31 | 1994-07-12 | Nace Technology, Inc. | Wafer fabrication |
| US5798016A (en)* | 1994-03-08 | 1998-08-25 | International Business Machines Corporation | Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability |
| JPH07273086A (en)* | 1994-03-30 | 1995-10-20 | Sumitomo Metal Ind Ltd | Plasma processing apparatus and plasma processing method using the apparatus |
| US5885356A (en)* | 1994-11-30 | 1999-03-23 | Applied Materials, Inc. | Method of reducing residue accumulation in CVD chamber using ceramic lining |
| JP3778299B2 (en)* | 1995-02-07 | 2006-05-24 | 東京エレクトロン株式会社 | Plasma etching method |
| JP3257328B2 (en)* | 1995-03-16 | 2002-02-18 | 株式会社日立製作所 | Plasma processing apparatus and plasma processing method |
| JP3218917B2 (en)* | 1995-05-19 | 2001-10-15 | 株式会社日立製作所 | Plasma processing apparatus and plasma processing method |
| US5968379A (en)* | 1995-07-14 | 1999-10-19 | Applied Materials, Inc. | High temperature ceramic heater assembly with RF capability and related methods |
| US5908316A (en)* | 1995-12-18 | 1999-06-01 | Motorola, Inc. | Method of passivating a semiconductor substrate |
| JPH09186137A (en)* | 1995-12-27 | 1997-07-15 | Sony Corp | Manufacturing apparatus for semiconductor device |
| US5788799A (en)* | 1996-06-11 | 1998-08-04 | Applied Materials, Inc. | Apparatus and method for cleaning of semiconductor process chamber surfaces |
| US6055927A (en)* | 1997-01-14 | 2000-05-02 | Applied Komatsu Technology, Inc. | Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology |
| US6692617B1 (en)* | 1997-05-08 | 2004-02-17 | Applied Materials, Inc. | Sustained self-sputtering reactor having an increased density plasma |
| KR100258984B1 (en)* | 1997-12-24 | 2000-08-01 | 윤종용 | Dry etching apparatus |
| US6129808A (en)* | 1998-03-31 | 2000-10-10 | Lam Research Corporation | Low contamination high density plasma etch chambers and methods for making the same |
| US6014979A (en)* | 1998-06-22 | 2000-01-18 | Applied Materials, Inc. | Localizing cleaning plasma for semiconductor processing |
| JP2000082694A (en)* | 1998-06-29 | 2000-03-21 | Sumitomo Metal Ind Ltd | Plasma processing equipment |
| DE19900179C1 (en)* | 1999-01-07 | 2000-02-24 | Bosch Gmbh Robert | Installation for etching substrates by high-density plasmas comprises a phase delay line causing the supply voltages at both ends of the inductively coupled plasma coil to be in counter-phase with one another |
| DE60015270T2 (en)* | 1999-04-14 | 2006-02-09 | Surface Technology Systems Plc, Newport | METHOD AND DEVICE FOR STABILIZING A PLASMA |
| DE19919469A1 (en)* | 1999-04-29 | 2000-11-02 | Bosch Gmbh Robert | Process for plasma etching silicon |
| CN100391310C (en)* | 1999-05-14 | 2008-05-28 | 阿苏克技术有限责任公司 | Electrical heating devices and resettable fuses |
| JP2001077094A (en)* | 1999-09-07 | 2001-03-23 | Matsushita Electric Ind Co Ltd | Plasma processing equipment |
| US6408786B1 (en)* | 1999-09-23 | 2002-06-25 | Lam Research Corporation | Semiconductor processing equipment having tiled ceramic liner |
| TW503442B (en)* | 2000-02-29 | 2002-09-21 | Applied Materials Inc | Coil and coil support for generating a plasma |
| WO2002020864A2 (en)* | 2000-06-16 | 2002-03-14 | Applied Materials, Inc. | System and method for depositing high dielectric constant materials and compatible conductive materials |
| US6506254B1 (en)* | 2000-06-30 | 2003-01-14 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
| US20020185226A1 (en)* | 2000-08-10 | 2002-12-12 | Lea Leslie Michael | Plasma processing apparatus |
| US7345342B2 (en)* | 2001-01-30 | 2008-03-18 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
| US20030052088A1 (en)* | 2001-09-19 | 2003-03-20 | Anisul Khan | Method for increasing capacitance in stacked and trench capacitors |
| US20030188685A1 (en)* | 2002-04-08 | 2003-10-09 | Applied Materials, Inc. | Laser drilled surfaces for substrate processing chambers |
| US6759340B2 (en)* | 2002-05-09 | 2004-07-06 | Padmapani C. Nallan | Method of etching a trench in a silicon-on-insulator (SOI) structure |
| US20030213560A1 (en)* | 2002-05-16 | 2003-11-20 | Yaxin Wang | Tandem wafer processing system and process |
| FR2842388B1 (en)* | 2002-07-11 | 2004-09-24 | Cit Alcatel | METHOD AND DEVICE FOR ETCHING SUBSTRATE BY INDUCTIVE PLASMA WITH VERY HIGH POWER |
| US7652326B2 (en)* | 2003-05-20 | 2010-01-26 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
| US7205240B2 (en)* | 2003-06-04 | 2007-04-17 | Applied Materials, Inc. | HDP-CVD multistep gapfill process |