FR2300417A1 - INTEGRATED SEMICONDUCTOR CIRCUIT WITH COMPLEMENTARY PNP-NPN TRANSISTORS - Google Patents

INTEGRATED SEMICONDUCTOR CIRCUIT WITH COMPLEMENTARY PNP-NPN TRANSISTORS

Info

Publication number: FR2300417A1
Authority: FR; France
Prior art keywords: semiconductor circuit; integrated semiconductor; npn transistors; complementary pnp; pnp
Prior art date: 1975-02-08
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Other versions

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sony Corp

Original Assignee

Sony Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1975-02-08

Filing date

1976-02-06

Publication date

1976-09-03

1976-02-06Application filed by Sony CorpfiledCriticalSony Corp

1976-09-03Publication of FR2300417A1publicationCriticalpatent/FR2300417A1/en

1980-03-21Application grantedgrantedCritical

1980-03-21Publication of FR2300417B1publicationCriticalpatent/FR2300417B1/fr

StatusGrantedlegal-statusCriticalCurrent

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
- H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
- H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/67—Complementary BJTs
- H10D84/673—Vertical complementary BJTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass

FR7603362A1975-02-081976-02-06 INTEGRATED SEMICONDUCTOR CIRCUIT WITH COMPLEMENTARY PNP-NPN TRANSISTORSGrantedFR2300417A1 (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP50016561AJPS5914897B2 (en)	1975-02-08	1975-02-08	semiconductor equipment

Publications (2)

Publication Number	Publication Date
FR2300417A1true FR2300417A1 (en)	1976-09-03
FR2300417B1 FR2300417B1 (en)	1980-03-21

Family

ID=11919681

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR7603362AGrantedFR2300417A1 (en)	1975-02-08	1976-02-06	INTEGRATED SEMICONDUCTOR CIRCUIT WITH COMPLEMENTARY PNP-NPN TRANSISTORS

Country Status (8)

Country	Link
JP (1)	JPS5914897B2 (en)
CA (1)	CA1048655A (en)
CH (1)	CH607332A5 (en)
DE (1)	DE2604735A1 (en)
FR (1)	FR2300417A1 (en)
GB (1)	GB1533156A (en)
IT (1)	IT1055132B (en)
NL (1)	NL7601307A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0301468A3 (en)*	1987-07-29	1989-10-04	Fairchild Semiconductor Corporation	Process for fabricating complementary contactless vertical bipolar transistors
CN113206040A (en)*	2020-01-30	2021-08-03	意法半导体(克洛尔2)公司	Method of manufacturing a device comprising a PNP bipolar transistor and an NPN bipolar transistor

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS56126960A (en)*	1980-03-11	1981-10-05	Nec Corp	Manufacture of semiconductor device
EP0093304B1 (en)*	1982-04-19	1986-01-15	Matsushita Electric Industrial Co., Ltd.	Semiconductor ic and method of making the same
JPS61164399U (en)*	1985-03-30	1986-10-11
IT1218471B (en)*	1985-05-09	1990-04-19	Ates Componenti Elettron	BIPOLAR INTEGRATED CIRCUIT INCLUDING VERTICAL PNP TRANSISTORS WITH COLLECTOR ON THE SUBSTRATE
JPS6386192U (en)*	1986-11-19	1988-06-06
JPH02296994A (en)*	1989-05-09	1990-12-07	Fujita Corp	Cutter head of slurry shield machine
JPH03128793U (en)*	1990-04-10	1991-12-25
JPH0450493U (en)*	1990-08-31	1992-04-28

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5147583B2 (en)*	1972-12-29	1976-12-15

1975
- 1975-02-08JPJP50016561Apatent/JPS5914897B2/ennot_activeExpired
1976
- 1976-02-04GBGB4400/76Apatent/GB1533156A/ennot_activeExpired
- 1976-02-05ITIT19950/76Apatent/IT1055132B/enactive
- 1976-02-05CACA76245057Apatent/CA1048655A/ennot_activeExpired
- 1976-02-06DEDE19762604735patent/DE2604735A1/ennot_activeWithdrawn
- 1976-02-06FRFR7603362Apatent/FR2300417A1/enactiveGranted
- 1976-02-06CHCH146276Apatent/CH607332A5/xxnot_activeIP Right Cessation
- 1976-02-09NLNL7601307Apatent/NL7601307A/ennot_activeApplication Discontinuation

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0301468A3 (en)*	1987-07-29	1989-10-04	Fairchild Semiconductor Corporation	Process for fabricating complementary contactless vertical bipolar transistors
CN113206040A (en)*	2020-01-30	2021-08-03	意法半导体(克洛尔2)公司	Method of manufacturing a device comprising a PNP bipolar transistor and an NPN bipolar transistor
FR3106931A1 (en)*	2020-01-30	2021-08-06	Stmicroelectronics (Crolles 2) Sas	A method of manufacturing a device comprising a PNP bipolar transistor and an NPN bipolar transistor for radio frequency applications
US11538719B2 (en)	2020-01-30	2022-12-27	Stmicroelectronics (Crolles 2) Sas	Method for fabricating a device comprising a PNP bipolar transistor and NPN bipolar transistor for radiofrequency applications
US11955481B2 (en)	2020-01-30	2024-04-09	Stmicroelectronics (Crolles 2) Sas	Device comprising a PNP bipolar transistor and NPN bipolar transistor for radiofrequency applications
CN113206040B (en)*	2020-01-30	2024-11-22	意法半导体(克洛尔2)公司	Method of manufacturing a device including a PNP bipolar transistor and an NPN bipolar transistor

Also Published As

Publication number	Publication date
CH607332A5 (en)	1978-12-15
FR2300417B1 (en)	1980-03-21
JPS5914897B2 (en)	1984-04-06
DE2604735A1 (en)	1976-08-19
IT1055132B (en)	1981-12-21
JPS5191680A (en)	1976-08-11
NL7601307A (en)	1976-08-10
GB1533156A (en)	1978-11-22
CA1048655A (en)	1979-02-13

Publication	Publication Date	Title
FR2336801A1 (en)	1977-07-22	INTEGRATED CIRCUIT
DK479576A (en)	1977-04-24	TRANSISTOR TENDING CIRCUIT
IT1070004B (en)	1985-03-25	PERFECTED SEMICONDUCTOR INTEGRATED CIRCUIT
BE843622A (en)	1976-10-18	BIPOLAR INTEGRATED CIRCUIT
SE407728B (en)	1979-04-09	SEMICONDUCTOR ARRANGEMENTS FOR LOGIC CIRCUITS
FR2313777A1 (en)	1976-12-31	INTEGRATED SEMICONDUCTOR LAYOUT
SE413216B (en)	1980-04-28	COMPOSITE TRANSISTOR CIRCUIT
FR2335052A1 (en)	1977-07-08	INTEGRATED CIRCUIT
IT1056855B (en)	1982-02-20	INTEGRATED CIRCUIT SEMI-CONDUCTIVE ARRANGEMENT
BE824510A (en)	1975-05-15	COMBINED TRANSISTOR CIRCUIT
FR2350728A1 (en)	1977-12-02	MIXER CIRCUIT WITH COMPLEMENTARY TRANSISTORS
FR2300417A1 (en)	1976-09-03	INTEGRATED SEMICONDUCTOR CIRCUIT WITH COMPLEMENTARY PNP-NPN TRANSISTORS
BE840685A (en)	1976-08-02	SEMICONDUCTOR CIRCUITS
GB1542096A (en)	1979-03-14	Monolithically integrated semiconductor circuit arrangement
SE7605316L (en)	1976-11-14	INTEGRATED CONNECTION CIRCUIT
IT1057752B (en)	1982-03-30	TRANSISTOR DETECTOR CIRCUIT
IT1058422B (en)	1982-04-10	OMOS INVERTER CONTAINING TWO COMPLEMENTARY MOS TRANSISTORS
FR2313799A1 (en)	1976-12-31	TRANSISTOR INVERTER
NL188724C (en)	1992-09-01	TRANSISTOR INVERTER CIRCUIT.
NL7603827A (en)	1976-10-18	INTEGRATED CIRCUIT.
FR2353960A1 (en)	1977-12-30	SCHOTTKY TRANSISTOR LOGIC CIRCUIT
IT1126588B (en)	1986-05-21	CIRCUIT ARRANGEMENT WITH INTERISTED MOS TRANSISTOR
NL7602373A (en)	1976-09-09	INTEGRATED SEMICONDUCTOR SWITCHES.
NL161631C (en)	1980-02-15	POWER AMPLIFIER CIRCUIT WITH TRANSISTORS.
JPS5275987A (en)	1977-06-25	Gate protecting device

Legal Events

Date	Code	Title	Description
1994-12-30	ST	Notification of lapse

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