Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
  • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
  • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
  • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
  • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
  • H10D84/617—Combinations of vertical BJTs and only diodes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
  • H10D84/641—Combinations of only vertical BJTs
  • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

• Engineering & Computer Science (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Bipolar Transistors (AREA)
• Bipolar Integrated Circuits (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=23982440

Family Applications (1)

Country Status (9)

Cited By (6)

Families Citing this family (3)

• 1975
  • 1975-07-11ININ1354/CAL/75Apatent/IN141922B/enunknown
  • 1975-08-12DEDE19752535864patent/DE2535864A1/enactivePending
  • 1975-08-12JPJP50098444Apatent/JPS5145984A/jaactivePending
  • 1975-08-12SESE7509023Apatent/SE7509023L/enunknown
  • 1975-08-12GBGB33548/75Apatent/GB1502122A/ennot_activeExpired
  • 1975-08-13AUAU83924/75Apatent/AU8392475A/ennot_activeExpired
  • 1975-08-14BEBE7000690Apatent/BE832491A/enunknown
  • 1975-08-18NLNL7509804Apatent/NL7509804A/ennot_activeApplication Discontinuation
  • 1975-08-18FRFR7525542Apatent/FR2282721A1/ennot_activeWithdrawn

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