EP3314667A4 - SELF-ALIGNED SELF-ALIGNED AMPHOOT DOPING WITH FINFET TIP DAMAGE - Google Patents

SELF-ALIGNED SELF-ALIGNED AMPHOOT DOPING WITH FINFET TIP DAMAGE Download PDF

Info

Publication number: EP3314667A4
Authority: EP; European Patent Office
Prior art keywords: aligned; self; amphoot; finfet; doping
Prior art date: 2015-06-27
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Withdrawn

Application number

EP15897305.7A

Other languages

German (de)

French (fr)

Other versions

EP3314667A1 (en

Inventor

Jack T. Kavalieros

Chandra S. MOHAPATRA

Anand S. Murthy

Willy Rachmady

Matthew V. Metz

Gilbert Dewey

Tahir Ghani

Harold W. KENNEL

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Intel Corp

Original Assignee

Intel Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2015-06-27

Filing date

2015-06-27

Publication date

2019-02-27

2015-06-27Application filed by Intel CorpfiledCriticalIntel Corp

2018-05-02Publication of EP3314667A1publicationCriticalpatent/EP3314667A1/en

2019-02-27Publication of EP3314667A4publicationCriticalpatent/EP3314667A4/en

StatusWithdrawnlegal-statusCriticalCurrent

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/853—Complementary IGFETs, e.g. CMOS comprising FinFETs
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2258—Diffusion into or out of AIIIBV compounds
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
- H10D30/0241—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] doping of vertical sidewalls, e.g. using tilted or multi-angled implants
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/62—Fin field-effect transistors [FinFET]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
- H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Insulated Gate Type Field-Effect Transistor (AREA)

EP15897305.7A2015-06-272015-06-27 SELF-ALIGNED SELF-ALIGNED AMPHOOT DOPING WITH FINFET TIP DAMAGEWithdrawnEP3314667A4 (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
PCT/US2015/038197WO2017003414A1 (en)	2015-06-27	2015-06-27	Low damage self-aligned amphoteric finfet tip doping

Publications (2)

Publication Number	Publication Date
EP3314667A1 EP3314667A1 (en)	2018-05-02
EP3314667A4true EP3314667A4 (en)	2019-02-27

Family

ID=57608917

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP15897305.7AWithdrawnEP3314667A4 (en)	2015-06-27	2015-06-27	SELF-ALIGNED SELF-ALIGNED AMPHOOT DOPING WITH FINFET TIP DAMAGE

Country Status (5)

Country	Link
EP (1)	EP3314667A4 (en)
KR (1)	KR102352659B1 (en)
CN (1)	CN107636838B (en)
TW (1)	TWI706567B (en)
WO (1)	WO2017003414A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US11233148B2 (en)	2017-11-06	2022-01-25	Intel Corporation	Reducing band-to-band tunneling in semiconductor devices
WO2019125361A1 (en)*	2017-12-18	2019-06-27	Intel Corporation	Switching device with pocket having high mobility carriers
CN110970300B (en)*	2018-09-29	2023-09-22	中芯国际集成电路制造(上海)有限公司	Stacked ring-gate fin field effect transistor and method of forming the same

Citations (7)

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US4035205A (en)*	1974-12-24	1977-07-12	U.S. Philips Corporation	Amphoteric heterojunction
EP0565054A2 (en)*	1992-04-09	1993-10-13	Hughes Aircraft Company	N-type antimony-based strained layer superlattice and fabrication method
US20100163926A1 (en)*	2008-12-29	2010-07-01	Hudait Mantu K	Modulation-doped multi-gate devices
US20140264446A1 (en)*	2013-03-13	2014-09-18	International Business Machines Corporation	Iii-v finfets on silicon substrate
US20140332900A1 (en)*	2013-05-08	2014-11-13	International Business Machines Corporation	Low extension resistance iii-v compound fin field effect transistor
US20140353574A1 (en)*	2012-05-17	2014-12-04	The Board Of Trustees Of The University Of Illinois	Field effect transistor structure comprising a stack of vertically separated channel nanowires
WO2014209390A1 (en)*	2013-06-28	2014-12-31	Intel Corporation	Selective epitaxially grown iii-v materials based devices

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US8264032B2 (en)*	2009-09-01	2012-09-11	Taiwan Semiconductor Manufacturing Company, Ltd.	Accumulation type FinFET, circuits and fabrication method thereof
US20120161105A1 (en)*	2010-12-22	2012-06-28	Willy Rachmady	Uniaxially strained quantum well device and method of making same
US8900973B2 (en)*	2011-08-30	2014-12-02	International Business Machines Corporation	Method to enable compressively strained pFET channel in a FinFET structure by implant and thermal diffusion
US8896066B2 (en)*	2011-12-20	2014-11-25	Intel Corporation	Tin doped III-V material contacts
KR101891458B1 (en)*	2011-12-20	2018-08-24	인텔 코포레이션	Semiconductor device having iii-v semiconductor material layer
US8629038B2 (en)*	2012-01-05	2014-01-14	Taiwan Semiconductor Manufacturing Company, Ltd.	FinFETs with vertical fins and methods for forming the same
US8889541B1 (en)*	2013-05-07	2014-11-18	International Business Machines Corporation	Reduced short channel effect of III-V field effect transistor via oxidizing aluminum-rich underlayer
US9178045B2 (en)*	2013-09-27	2015-11-03	Samsung Electronics Co., Ltd.	Integrated circuit devices including FinFETS and methods of forming the same

2015
- 2015-06-27KRKR1020187002563Apatent/KR102352659B1/enactiveActive
- 2015-06-27WOPCT/US2015/038197patent/WO2017003414A1/ennot_activeCeased
- 2015-06-27CNCN201580080418.0Apatent/CN107636838B/enactiveActive
- 2015-06-27EPEP15897305.7Apatent/EP3314667A4/ennot_activeWithdrawn
2016
- 2016-05-25TWTW105116289Apatent/TWI706567B/enactive

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4035205A (en)*	1974-12-24	1977-07-12	U.S. Philips Corporation	Amphoteric heterojunction
EP0565054A2 (en)*	1992-04-09	1993-10-13	Hughes Aircraft Company	N-type antimony-based strained layer superlattice and fabrication method
US20100163926A1 (en)*	2008-12-29	2010-07-01	Hudait Mantu K	Modulation-doped multi-gate devices
US20140353574A1 (en)*	2012-05-17	2014-12-04	The Board Of Trustees Of The University Of Illinois	Field effect transistor structure comprising a stack of vertically separated channel nanowires
US20140264446A1 (en)*	2013-03-13	2014-09-18	International Business Machines Corporation	Iii-v finfets on silicon substrate
US20140332900A1 (en)*	2013-05-08	2014-11-13	International Business Machines Corporation	Low extension resistance iii-v compound fin field effect transistor
WO2014209390A1 (en)*	2013-06-28	2014-12-31	Intel Corporation	Selective epitaxially grown iii-v materials based devices

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SCHUBERT, E. FRED: "Doping in III-V semiconductors", 1993, CAMBRIDGE UNIVERSITY PRESS, ISBN: 0 521 41919 0, pages: 181 - 207, XP002787962*

Also Published As

Publication number	Publication date
CN107636838A (en)	2018-01-26
CN107636838B (en)	2022-01-14
TWI706567B (en)	2020-10-01
WO2017003414A1 (en)	2017-01-05
EP3314667A1 (en)	2018-05-02
TW201711204A (en)	2017-03-16
KR102352659B1 (en)	2022-01-18
KR20180021157A (en)	2018-02-28

Publication	Publication Date	Title
DK4032440T3 (en)	2023-09-04	LOW ARRANGEMENT
EP3366108A4 (en)	2019-06-19	MOWER
EP3362816A4 (en)	2019-05-15	LIDAR WITH SLOPE STABILITY
FR3039060B1 (en)	2017-08-11	ERGONOMIC MENSTRUAL CUT
EP3256271C0 (en)	2024-07-10	PUNCHING ARRANGEMENT WITH REPLACEABLE PUNCHING TIP
DK3288467T3 (en)	2022-01-31	BIOPSY DEVICE
DK3310675T3 (en)	2019-10-14	Can end
JP2013241444A5 (en)	2014-04-17
EP3541724A4 (en)	2020-04-29	WAVELESS ORDER PERFORMANCE
PT3182568T (en)	2018-03-09	CORRUGATED DEVICE
FI20155008A7 (en)	2016-07-09	Vehicle-assisted implement
EP3388693A4 (en)	2019-08-07	CLIP
DK3377417T3 (en)	2020-03-30	Can end
EP3315314A4 (en)	2019-03-20	PENCIL
DK3184642T3 (en)	2019-08-12	yeast
ME03312B (en)	2019-10-20	VORTOXETTE DRAWN
DK3298668T3 (en)	2019-06-24	On the ground channel
EP3312431A4 (en)	2019-02-20	BLOWER
DK3171925T3 (en)	2020-02-10	TUBE WITH APPLICATION TIP
EP3426045A4 (en)	2019-10-02	CONCENTRATED AGRICULTURAL FORMULATIONS WITH LOW VISCOSITY
HUE046655T2 (en)	2020-03-30	Antimicrobial solutions with increased stability
DK3465807T3 (en)	2025-01-13	ELECTRODE COMPRISING HEAVILY DOPED CERIUM
EP3314667A4 (en)	2019-02-27	SELF-ALIGNED SELF-ALIGNED AMPHOOT DOPING WITH FINFET TIP DAMAGE
FR3036644B1 (en)	2017-06-23	OVERMOUGH TIP
DE112016005703A5 (en)	2018-09-06	CVT

Legal Events

Date	Code	Title	Description
2017-01-06	STAA	Information on the status of an ep patent application or granted ep patent	Free format text:STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE
2018-03-30	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text:ORIGINAL CODE: 0009012
2018-03-30	STAA	Information on the status of an ep patent application or granted ep patent	Free format text:STATUS: REQUEST FOR EXAMINATION WAS MADE
2018-05-02	17P	Request for examination filed	Effective date:20171122
2018-05-02	AK	Designated contracting states	Kind code of ref document:A1 Designated state(s):AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
2018-05-02	AX	Request for extension of the european patent	Extension state:BA ME
2018-10-03	DAV	Request for validation of the european patent (deleted)
2018-10-03	DAX	Request for extension of the european patent (deleted)
2019-02-27	A4	Supplementary search report drawn up and despatched	Effective date:20190130
2019-02-27	RIC1	Information provided on ipc code assigned before grant	Ipc:H01L 29/78 20060101AFI20190118BHEP Ipc:H01L 21/8238 20060101ALI20190118BHEP Ipc:H01L 21/336 20060101ALI20190118BHEP
2021-02-05	STAA	Information on the status of an ep patent application or granted ep patent	Free format text:STATUS: THE APPLICATION HAS BEEN WITHDRAWN
2021-03-10	18W	Application withdrawn	Effective date:20210129

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