EP0741909A4 - Methods for improving semiconductor processing - Google Patents

Methods for improving semiconductor processing

Info

Publication number: EP0741909A4
Authority: EP; European Patent Office
Prior art keywords: methods; semiconductor processing; improving semiconductor; improving; processing
Prior art date: 1994-01-27
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Withdrawn

Other versions

Inventor

Frank R Balma

Brent D Elliot

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Insync Systems Inc

Original Assignee

Insync Systems Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1994-01-27

Filing date

1995-01-12

Publication date

1998-01-07

1995-01-12Application filed by Insync Systems IncfiledCriticalInsync Systems Inc

1996-11-13Publication of EP0741909A1publicationCriticalpatent/EP0741909A1/en

1998-01-07Publication of EP0741909A4publicationCriticalpatent/EP0741909A4/en

StatusWithdrawnlegal-statusCriticalCurrent

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0209—Pretreatment of the material to be coated by heating
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Organic Chemistry (AREA)
Metallurgy (AREA)
Mechanical Engineering (AREA)
Materials Engineering (AREA)
Chemical Kinetics & Catalysis (AREA)
General Chemical & Material Sciences (AREA)
Computer Hardware Design (AREA)
Power Engineering (AREA)
Microelectronics & Electronic Packaging (AREA)
Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
General Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Drying Of Semiconductors (AREA)
Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Chemical Vapour Deposition (AREA)
ing And Chemical Polishing (AREA)
Cleaning Or Drying Semiconductors (AREA)

EP95907316A1994-01-271995-01-12Methods for improving semiconductor processingWithdrawnEP0741909A4 (en)

Applications Claiming Priority (5)

Application Number	Priority Date	Filing Date	Title
US22945094A	1994-01-27	1994-01-27
US229450		1994-01-27
US26692994A	1994-06-27	1994-06-27
US266929		1994-06-27
PCT/US1995/000131WO1995020823A1 (en)	1994-01-27	1995-01-12	Methods for improving semiconductor processing

Publications (2)

Publication Number	Publication Date
EP0741909A1 EP0741909A1 (en)	1996-11-13
EP0741909A4true EP0741909A4 (en)	1998-01-07

Family

ID=26923315

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP95907316AWithdrawnEP0741909A4 (en)	1994-01-27	1995-01-12	Methods for improving semiconductor processing

Country Status (6)

Country	Link
EP (1)	EP0741909A4 (en)
JP (1)	JPH09508494A (en)
KR (1)	KR970700935A (en)
AU (1)	AU1559195A (en)
SG (1)	SG165131A1 (en)
WO (1)	WO1995020823A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5992463A (en)	1996-10-30	1999-11-30	Unit Instruments, Inc.	Gas panel
US6376387B2 (en)*	1999-07-09	2002-04-23	Applied Materials, Inc.	Method of sealing an epitaxial silicon layer on a substrate
JP2001319885A (en)*	2000-03-02	2001-11-16	Hitachi Kokusai Electric Inc	Substrate processing apparatus and semiconductor manufacturing method
US6436194B1 (en)	2001-02-16	2002-08-20	Applied Materials, Inc.	Method and a system for sealing an epitaxial silicon layer on a substrate
JP2006147922A (en)*	2004-11-22	2006-06-08	Seiko Epson Corp	Semiconductor device manufacturing equipment
US20120298998A1 (en)	2011-05-25	2012-11-29	Semiconductor Energy Laboratory Co., Ltd.	Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
US10796935B2 (en)*	2017-03-17	2020-10-06	Applied Materials, Inc.	Electronic device manufacturing systems, methods, and apparatus for heating substrates and reducing contamination in loadlocks
CN111627797B (en)*	2020-06-08	2022-06-10	中国电子科技集团公司第二十四研究所	A processing method for improving the bonding reliability of semiconductor chips
KR102804612B1 (en)*	2023-12-20	2025-05-09	주식회사 에스지에스코리아	Wafer heating and cooling device in semiconductor processing equipment

Citations (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS58158392A (en)*	1982-03-15	1983-09-20	Matsushita Electronics Corp	Cold trapping apparatus used for dry etching
EP0273470A2 (en)*	1986-12-02	1988-07-06	STMicroelectronics S.r.l.	Method for decontamination of a chamber used in vacuum processes for deposition, etching and/or growth of high purity films, particularly applicable to semiconductor technology
JPH03234021A (en)*	1990-02-09	1991-10-18	Mitsubishi Electric Corp	Method and apparatus for cleaning semiconductor wafer
WO1994027315A1 (en)*	1993-05-13	1994-11-24	Interuniversitair Microelektronica Centrum	Method for semiconductor processing using mixtures of hf and carboxylic acid
EP0632144A2 (en)*	1993-06-30	1995-01-04	Applied Materials, Inc.	Method of purging and pumping vacuum chamber to ultra-high vacuum
WO1996013067A1 (en)*	1994-10-21	1996-05-02	Tadahiro Ohmi	Method of, and apparatus for, producing thin film transistor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4981102A (en)*	1984-04-12	1991-01-01	Ethyl Corporation	Chemical vapor deposition reactor and process
JPS63141319A (en)*	1986-12-03	1988-06-13	Mitsubishi Electric Corp	Dry etching processing equipment
US5019409A (en)*	1989-01-27	1991-05-28	Microelectronics And Computer Technology Corporation	Method for coating the top of an electrical device
US5244820A (en)*	1990-03-09	1993-09-14	Tadashi Kamata	Semiconductor integrated circuit device, method for producing the same, and ion implanter for use in the method
US5146869A (en)*	1990-06-11	1992-09-15	National Semiconductor Corporation	Tube and injector for preheating gases in a chemical vapor deposition reactor
US5048201A (en)*	1990-07-13	1991-09-17	Interlab, Inc.	Laminar flow system for drying parts
JP3023982B2 (en)*	1990-11-30	2000-03-21	東京エレクトロン株式会社	Film formation method
US5320680A (en)*	1991-04-25	1994-06-14	Silicon Valley Group, Inc.	Primary flow CVD apparatus comprising gas preheater and means for substantially eddy-free gas flow
US5178651A (en)*	1991-08-07	1993-01-12	Balma Frank R	Method for purifying gas distribution systems
US5188979A (en)*	1991-08-26	1993-02-23	Motorola Inc.	Method for forming a nitride layer using preheated ammonia

1995
- 1995-01-12EPEP95907316Apatent/EP0741909A4/ennot_activeWithdrawn
- 1995-01-12WOPCT/US1995/000131patent/WO1995020823A1/ennot_activeApplication Discontinuation
- 1995-01-12SGSG9605426-7Apatent/SG165131A1/enunknown
- 1995-01-12AUAU15591/95Apatent/AU1559195A/ennot_activeAbandoned
- 1995-01-12JPJP7520051Apatent/JPH09508494A/enactivePending
1996
- 1996-07-27KRKR1019960704068Apatent/KR970700935A/ennot_activeCeased

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS58158392A (en)*	1982-03-15	1983-09-20	Matsushita Electronics Corp	Cold trapping apparatus used for dry etching
EP0273470A2 (en)*	1986-12-02	1988-07-06	STMicroelectronics S.r.l.	Method for decontamination of a chamber used in vacuum processes for deposition, etching and/or growth of high purity films, particularly applicable to semiconductor technology
JPH03234021A (en)*	1990-02-09	1991-10-18	Mitsubishi Electric Corp	Method and apparatus for cleaning semiconductor wafer
WO1994027315A1 (en)*	1993-05-13	1994-11-24	Interuniversitair Microelektronica Centrum	Method for semiconductor processing using mixtures of hf and carboxylic acid
EP0632144A2 (en)*	1993-06-30	1995-01-04	Applied Materials, Inc.	Method of purging and pumping vacuum chamber to ultra-high vacuum
WO1996013067A1 (en)*	1994-10-21	1996-05-02	Tadahiro Ohmi	Method of, and apparatus for, producing thin film transistor

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
LAURENTIS DE E ET AL: "MICROCONTAMINATION REDUCTION AND CORROSION PREVENTION FOR ALUMINUM ETCH THROUGH LOADLOCK IMPROVEMENTS", EXTENDED ABSTRACTS, vol. 92/1, 1 January 1992 (1992-01-01), pages 177/178, XP000549272*
PATENT ABSTRACTS OF JAPAN vol. 16, no. 14 (E - 1154) 14 January 1992 (1992-01-14)*
PATENT ABSTRACTS OF JAPAN vol. 7, no. 283 (M - 263) 16 December 1983 (1983-12-16)*
See also references ofWO9520823A1*
WRESH W P ET AL: "VACUUM INTEGRITY IMPROVEMENT AND CONTROL IN SPUTTER SYSTEMS FOR MEMORY DEVICES", AIP CONFERENCE PROCEEDINGS, 3 April 1989 (1989-04-03), pages 147 - 150, XP000572462*

Also Published As

Publication number	Publication date
WO1995020823A1 (en)	1995-08-03
EP0741909A1 (en)	1996-11-13
JPH09508494A (en)	1997-08-26
SG165131A1 (en)	2010-10-28
AU1559195A (en)	1995-08-15
KR970700935A (en)	1997-02-12

Publication	Publication Date	Title
GB2279366B (en)	1996-12-18	Semiconductor processing apparatus
TW504041U (en)	2002-09-21	Wafer processing apparatus
AU7358994A (en)	1995-11-29	Semiconductor wafer processing system
GB2292010B (en)	1998-06-24	Semiconductor device
EP0704897A3 (en)	1997-07-16	Semiconductor device
TW474456U (en)	2002-01-21	Semiconductor apparatus
GB2290413B (en)	1998-04-15	Method of processing silicon
EP0675528A3 (en)	1997-05-28	Method for rinsing wafers and rinsing apparatus.
GB9423423D0 (en)	1995-01-11	Semiconductor device
GB2291536B (en)	1998-08-19	Method for manufacturing semiconductor device
GB2292637B (en)	1998-07-22	Semiconductor device
GB2295272B (en)	1998-01-14	Semiconductor device
EP0741909A4 (en)	1998-01-07	Methods for improving semiconductor processing
GB2288171B (en)	1997-12-03	Package processing
GB9421940D0 (en)	1994-12-21	Processing apparatus
EP0709879A4 (en)	1997-07-30	Method for manufacturing semiconductor
GB2296373B (en)	1997-09-10	Semiconductor device
GB2287819B (en)	1996-12-18	Automated forms processing
GB2295051B (en)	1998-09-23	Semiconductor device
EP0723386A4 (en)	1997-01-29	Plasma processing device
GB9402639D0 (en)	1994-04-06	Semiconductor device
GB2286719B (en)	1997-09-03	Semiconductor device
PL333232A1 (en)	1999-11-22	Machine for processing starch-based-products
SG90076A1 (en)	2002-07-23	Method and apparatus for processing leadframe
GB2288250B (en)	1998-04-29	Semiconductor device fabrication method

Legal Events

Date	Code	Title	Description
1996-09-27	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text:ORIGINAL CODE: 0009012
1996-11-13	17P	Request for examination filed	Effective date:19960723
1996-11-13	AK	Designated contracting states	Kind code of ref document:A1 Designated state(s):DE FR GB IE IT
1998-01-07	A4	Supplementary search report drawn up and despatched	Effective date:19971125
1998-01-07	AK	Designated contracting states	Kind code of ref document:A4 Designated state(s):DE FR GB IE IT
2000-01-19	17Q	First examination report despatched	Effective date:19991206
2001-02-02	STAA	Information on the status of an ep patent application or granted ep patent	Free format text:STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN
2001-03-21	18D	Application deemed to be withdrawn	Effective date:20000617

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