Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D30/00—Field-effect transistors [FET]
  • H10D30/60—Insulated-gate field-effect transistors [IGFET]
  • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
  • H10D30/66—Vertical DMOS [VDMOS] FETs
  • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D30/00—Field-effect transistors [FET]
  • H10D30/60—Insulated-gate field-effect transistors [IGFET]
  • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
  • H10D30/66—Vertical DMOS [VDMOS] FETs
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D30/00—Field-effect transistors [FET]
  • H10D30/60—Insulated-gate field-effect transistors [IGFET]
  • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
  • H10D30/66—Vertical DMOS [VDMOS] FETs
  • H10D30/662—Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D30/00—Field-effect transistors [FET]
  • H10D30/60—Insulated-gate field-effect transistors [IGFET]
  • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
  • H10D30/66—Vertical DMOS [VDMOS] FETs
  • H10D30/663—Vertical DMOS [VDMOS] FETs having both source contacts and drain contacts on the same surface, i.e. up-drain VDMOS
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
  • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
  • H10D62/126—Top-view geometrical layouts of the regions or the junctions
  • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
  • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
  • H10D62/149—Source or drain regions of field-effect devices
  • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
  • H10D62/156—Drain regions of DMOS transistors
  • H10D62/157—Impurity concentrations or distributions
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
  • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
  • H10D62/393—Body regions of DMOS transistors or IGBTs 
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/02—Bonding areas; Manufacturing methods related thereto
  • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
  • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
  • H01L2224/0601—Structure
  • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
  • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
  • H10D62/149—Source or drain regions of field-effect devices
  • H10D62/151—Source or drain regions of field-effect devices of IGFETs 

Applications Claiming Priority (4)

Publications (3)

Family

ID=26715426

Family Applications (3)

Family Applications After (2)

Country Status (19)

Families Citing this family (47)

Family Cites Families (7)

• 1979
  • 1979-08-22DKDK350679Apatent/DK157272C/ennot_activeIP Right Cessation
  • 1979-08-28ILIL58128Apatent/IL58128A/enunknown
  • 1979-09-25ARAR278193Apatent/AR219006A1/enactive
  • 1979-09-28CSCS796589Apatent/CS222676B2/enunknown
  • 1979-09-28MXMX179453Apatent/MX147137A/enunknown
  • 1979-10-02BRBR7906338Apatent/BR7906338A/ennot_activeIP Right Cessation
  • 1979-10-02ESES484652Apatent/ES484652A1/ennot_activeExpired
  • 1979-10-08DEDE2940699Apatent/DE2940699C2/ennot_activeExpired
  • 1979-10-08DEDE19792954481patent/DE2954481C2/ennot_activeExpired - Lifetime
  • 1979-10-09GBGB7935059Apatent/GB2033658B/ennot_activeExpired
  • 1979-10-09CACA337,182Apatent/CA1123119A/ennot_activeExpired
  • 1979-10-09FRFR7925070Apatent/FR2438917A1/enactiveGranted
  • 1979-10-09NLNLAANVRAGE7907472,Apatent/NL175358C/ennot_activeIP Right Cessation
  • 1979-10-11HUHU79IE891Apatent/HU182506B/ennot_activeIP Right Cessation
  • 1979-10-11SUSU792835965Apatent/SU1621817A3/enactive
  • 1979-10-11ITIT26435/79Apatent/IT1193238B/enactive
  • 1979-10-11PLPL1979218878Apatent/PL123961B1/enunknown
  • 1979-10-12CHCH7696/81Apatent/CH660649A5/ennot_activeIP Right Cessation
  • 1979-10-12CHCH923279Apatent/CH642485A5/ennot_activeIP Right Cessation
  • 1979-10-12SESE7908479Apatent/SE443682B/ennot_activeIP Right Cessation
• 1981
  • 1981-11-12CACA000389973Apatent/CA1136291A/ennot_activeExpired
• 1985
  • 1985-07-26SESE8503615Apatent/SE465444B/ennot_activeIP Right Cessation
• 1987
  • 1987-04-28JPJP62106158Apatent/JP2622378B2/ennot_activeExpired - Lifetime
• 1988
  • 1988-09-15DKDK512388Apatent/DK512388A/ennot_activeApplication Discontinuation
  • 1988-09-15DKDK512488Apatent/DK512488A/ennot_activeApplication Discontinuation
• 1994
  • 1994-10-12JPJP6246144Apatent/JP2643095B2/ennot_activeExpired - Lifetime

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