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DE3836696C1 - Lock for transporting material between clean rooms - Google Patents

Lock for transporting material between clean rooms

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Publication number
DE3836696C1
DE3836696C1DE3836696ADE3836696ADE3836696C1DE 3836696 C1DE3836696 C1DE 3836696C1DE 3836696 ADE3836696 ADE 3836696ADE 3836696 ADE3836696 ADE 3836696ADE 3836696 C1DE3836696 C1DE 3836696C1
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Germany
Prior art keywords
lock
clean rooms
end faces
adjacent
openings
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DE3836696A
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German (de)
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Manfred Dipl.-Ing. 7016 Gerlingen De Kelemen
Wilfried 7140 Ludwigsburg De Seyfang
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Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
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Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
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Priority to DE3836696ApriorityCriticalpatent/DE3836696C1/en
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Publication of DE3836696C1publicationCriticalpatent/DE3836696C1/en
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Abstract

In an arrangement having at least two clean rooms (1, 1') for the treatment of substrates (4), which clean rooms adjoin one another with their end faces (2, 2') and, for transportation of the substrates (4), are connected to one another via lock openings (3, 3') provided in the end faces (2, 2'), excess pressure prevailing in at least one of the clean rooms (1, 1') in relation to its external region (5), it is proposed for avoiding contamination, for time-saving alteration of the arrangement or for simple repair or maintenance that the two mutually adjoining clean rooms (1, 1') are arranged mechanically separated from one another by a gap-like free interspace (7) between their adjoining end faces (2, 2'), that the mutually corresponding lock openings (3, 3') in the end faces (2, 2') are surrounded by at least one lock frame (6, 6'), by means of which a throttling of the excess-pressure gas flow between lock opening (3, 3') and external region (5) takes place. <IMAGE>

Description

Translated fromGerman

Die Erfindung betrifft eine Vorrichtung mit mindestens zwei mit ihren Stirnseiten aneinandergrenzenden Reinräumen für die Behandlung von Substraten, die zum Transport der Substrate über in den Stirnseiten vorgesehene Schleusenöffnungen miteinander in Verbindung stehen, wobei in mindestens einem der Reinräume gegenüber dessen Außenbereich Überdruck herrscht.The invention relates to a device with at least twotheir end faces adjoining cleanrooms for theTreatment of substrates used to transport the substrates overlock openings provided in the end faces with each other inConnect, being in at least one of the cleanroomsoverpressure prevails over its outside area.

Solche Vorrichtungen finden Verwendung zum Substrattransfer zwischen Reinräumen und lokalen Reinräumen bei der Halbleiterfertigung. Die als Baueinheiten ausgebildeten Reinräume sind unter Zwischenlage von Dichtungen fest miteinander verschraubt. Der Schleusenbereich wird bei dieser Anordnung nicht definiert durchströmt, so daß es zu unerwünschten Partikelansammlungen im Schleusenbereich kommen kann. Bei der Änderung der Anordnung sind hier aufwendige Montagearbeiten erforderlich, bei denen immer die Gefahr besteht, daß in die Reinräume selbst Verunreinigungen eindringen können, die dann Ursache für hohe Ausschußquoten sind.Such devices are used for substrate transferbetween cleanrooms and local cleanrooms at theSemiconductor manufacturing. The trained as building units Clean rooms are solid with the interposition of sealsscrewed together. The lock area is at thisFlow through arrangement not defined, so that it toounwanted particle accumulations in the lock areacan. When changing the arrangement here are complexAssembly work required, always with the dangeris that impurities enter the clean rooms themselvescan, which are then the cause of high reject rates.

In Vermeidung der geschilderten Nachteile liegt der vorliegenden Erfindung die Aufgabe zugrunde, eine Vorrichtung der eingangs genannten Art so zu verbessern, daß eine Änderung der Anordnung zeitsparend ohne Gefahr des Eindringens von Verunreinigungen in die Reinräume ermöglicht wird und im Betrieb eine unerwünschte Ablagerung von Partikeln im Schleusenbereich verhindert wird.In avoiding the disadvantages described, the present liesInvention, the object of a device of the beginningto improve the type mentioned so that a change in arrangementsaves time without the risk of contamination enteringthe cleanrooms is enabled and undesirable in operationDeposition of particles in the lock area is prevented.

Zur Lösung dieser Aufgabe sieht die Erfindung vor, daß die beiden aneinander angrenzenden Reinräume durch einen spaltartigen freien Zwischenraum als Schleusenraum zwischen ihren angrenzenden Stirnseiten mechanisch voneinander getrennt angeordnet sind, daß die miteinander korrespondierenden Schleusenöffnungen in den Stirnseiten von mindestens einem Schleusenrahmen umschlossen sind, durch den eine Drosselung der Überdruckgasströmung Schleusenöffnungen-Außenbereich erfolgt.To achieve this object, the invention provides that the twoadjoining clean rooms by a gap-likefree space as a lock space between their adjacent facesmechanically separated from each other that thecorresponding lock openings in theEnd faces enclosed by at least one lock frameare, by throttling the pressure gas flowLock openings outside.

Ein unerwünschtes Eindringen von Verunreinigungen wird auch noch bei unterschiedlichen Drücken in den einzelnen Reinräumen verhindert. Ein Reinraum ist bei herrschendem Überdruck sogar öffenbar, ohne daß Schmutz eindringt, wenn im benachbarten angeschlossenen Reinraum ein ausreichend hoher Überdruck aufrechterhalten wird.An unwanted onePenetration of contaminants is also reduceddifferent pressures in the individual cleanroomsprevented. A clean room is even in the presence of overpressure can be opened without dirt entering if in the neighboringa sufficiently high overpressureis maintained.

Durch die mechanische Trennung der aneinander angrenzenden Reinräume ist eine Änderung der Anordnung bequem ohne Lösen von Flanschverschraubungen sehr zeitsparend möglich, wobei durch die Minimierung der Montagearbeiten auch eine wesentliche Herabsetzung der Gefahr des Eindringens von Schmutz in die Reinräume erfolgt.Due to the mechanical separation of the adjacentClean rooms is easy to change the arrangement without looseningFlange screw connections possible in a very time-saving wayMinimizing assembly work is also an essentialReduce the risk of dirt entering theClean rooms are done.

In besonders vorteilhafter Weise kann der Schleusenrahmen die Schleusenöffnung mit Randabstand umschließen, um so einen Schleusenzwischenraum mit größerem Querschnitt gegenüber der Schleusenöffnung zu bilden. Durch diese Querschnittserweiterung erfolgt eine Strömungsberuhigung der Reinatmosphäre verbunden mit einem Ansteigen des statischen Druckes, so daß durch diesen Überdruck ein Eindringen von Luft aus dem Außenbereich sicher verhindert ist.In a particularly advantageous manner, the lock frame canEnclose the lock opening with a margin to create oneLock interstice with a larger cross section than theForm lock opening. Through this cross-sectional expansiona flow calming of the pure atmosphere is connectedwith an increase in static pressure so that by thisOverpressure ensures that air can penetrate from outsideis prevented.

Eine gute Durchspülung zur sicheren Vermeidung des Eindringens oder sogar Ablagerns von unerwünschten Partikeln in Ecken kann dadurch erreicht werden, daß im Randbereich mindestens einer der Schleusenöffnungen mindestens eine Leitfläche vorgesehen ist, durch die eine etwa 90°-Umlenkung der Gasströmung im Randbereich der Schleusenöffnung erfolgt.A good flushing to safely avoid penetrationor even depositing unwanted particles in cornerscan be achieved in that at least one of theLock openings at least one guide surface is provided,due to the approximately 90 ° deflection of the gas flow in the edge areathe lock is opened. 

Solche Leitflächen können konstruktiv besonders einfach in den äußeren Bereich des Schleusenraums abgewinkelt sein, wobei eine 90°-Umlenkung im engsten Querschnitt der üblicherweise quadratisch ausgebildeten Schleusenöffnungen angeordnet sein kann. Ohne solche Leitflächen können in den Ecken Sogwirkungen durch Wirbel auftreten und Schmutz angesaugt werden, insbesondere bei nur geringem Überdruck.Such guiding surfaces can be constructed in a particularly simple manner in theouter area of the lock room be angled, one90 ° deflection in the narrowest cross section of the usualbe square-shaped lock openingscan. Without such baffles, suction can occur in the cornersoccur through eddies and dirt is sucked in,especially with only slight overpressure.

Montagemäßig besonders einfach können der oder die Schleusenrahmen parallele Stirnflächen aufweisen, von denen eine dicht mit der Stirnseite des zugeordneten Rahmens verbunden ist und die andere mit der Stirnseite des angrenzenden Reinraums oder ggf. mit der Stirnfläche des angrenzenden Schleusenrahmens des angrenzenden Reinraums zusammenwirkt.The assembly can be particularly simpleLock frame have parallel faces, one of whichis tightly connected to the face of the associated frameand the other with the front of the adjacent clean roomor possibly with the end face of the adjacent lock frameof the adjacent clean room interacts.

Um bei einer Änderung der Anordnung Beschädigungen weitestgehend zu vermeiden, können die Leitflächen einer Schleusenöffnung die Stirnflächen des sie umschließenden Schleusenrahmens nicht überragen und sie sind innerhalb der lichten Weite des Schleusenrahmens angeordnet.To largely damage when changing the arrangementto avoid the guiding surfaces of a lock openingNot face of the lock frame enclosing themtower and they are within the clear width of theLock frame arranged.

Zweckmäßigerweise sind die Schleusenrahmen und die Leitflächen der aneinander angrenzenden Reinräume symmetrisch gleich ausgebildet, so daß bei einer Änderung der Anordnung nicht auf die besondere Ausbildung der Schleusenrahmen und/oder Leitflächen geachtet werden muß.The lock frames and the guide surfaces are expedientof the adjacent clean rooms are symmetrically the sametrained so that when changing the arrangement not onthe special training of the lock frame and / orGuiding surfaces must be observed. 

Dadurch, daß die Schleusenrahmen zweier aneinander angrenzender Reinräume mindestens an zwei gegenüberliegenden Seiten aneinander anliegen, kann einmal die Austrittsmenge der durch die Schleusenrahmen austretenden Reinatmosphäre begrenzt und der Austrittsstrom ausgerichtet werden. Ohne die zweiseitige Abdichtung an gegenüberliegenden Seiten können sich in den Ecken der Schleusenrahmen Wirbel bilden, durch die eine Partikeleintragung erfolgen kann. Es kann mindestens einer der aneinander anliegenden Schleusenrahmen auf mindestens einer Seite mit einer Dichtlippe vorzugsweise in Form mindestens einer Leiste, eines Wulstes od. dgl. versehen sein.The fact that the lock frame two adjacent to each otherCleanrooms at least on two opposite sidesabut each other, can be the amount of leakage throughthe pure atmosphere exiting the lock frame is limited and theOutlet flow can be aligned. Without the two-sidedSealing on opposite sides can occur in the cornersthe lock frame form vortices through which oneParticle entry can take place. At least one of theadjoining lock frame on at least oneSide with a sealing lip, preferably in the form of at least oneBar, a bead or the like.

In Weiterentwicklung kann die Dichtlippe Durchströmkanäle freilassen und es können hierzu Aussparungen oder Durchbrüche in der Dichtlippe selbst oder in der Gegenfläche des angrenzenden, mit der Dichtlippe zusammenwirkenden Schleusenrahmens und/oder der angrenzenden Stirnseite des angrenzenden Reinraums vorgesehen sein. Hierdurch wird durch eine definierte Durchströmung der Schleusenöffnungen ein Eindringen oder gar eine Ablagerung von Partikeln verhindert. Strömungstote Ecken können so vollkommen vermieden werden und es kann trotzdem die Menge der austretenden Reinluft klein gehalten werden. Dem kommt außerdem entgegen, daß bei vielen Fertigungsprozessen die Reinluft in den Reinräumen ständig ausgetauscht werden muß, so daß es überhaupt kein Nachteil ist, daß zwischen den einzelnen Reinräumen ein Teil der Reinatmosphäre nach außen abströmt.As a further development, the sealing lip can have flow channelsleave blank and there can be recesses or openings inthe sealing lip itself or in the counter surface of the adjacent one,with the sealing lip interacting lock frame and / orthe adjacent face of the adjacent clean roombe provided. This is defined by aFlow through the lock openings an intrusion or evena deposition of particles is prevented. Current dead cornerscan be avoided completely and it can stillThe amount of exiting clean air can be kept small. That comesalso opposes that in many manufacturing processesClean air in the clean rooms must be exchanged constantly, sothat it is not a disadvantage at all that between the individualPart of the clean atmosphere flows out to clean rooms.

Zweckmäßige Ausgestaltungen der Erfindung sind den Unteransprüchen zu entnehmen.Advantageous embodiments of the invention are the subclaimsrefer to.

Ausführungsbeispiele der Erfindung werden anhand der Zeichnungen in der nachstehenden Beschreibung näher erläutert. Es zeigtEmbodiments of the invention are based on theDrawings in the description belowexplained. It shows

Fig. 1 eine schematische Draufsicht auf die Anordnung zweier Reinräume,Fig. 1 is a schematic plan view of the arrangement of two clean rooms,

Fig. 2 eine Teildraufsicht auf einen Eckbereich zweier aneinander angrenzender Reinräume in Richtung des Pfeils II inFig. 3,Fig. 2 is a partial plan view of a corner area of two adjacent clean rooms in the direction of arrow II inFig. 3,

Fig. 3 einen Teilschnitt durch den Schleusenöffnungsbereich zweier aneinander angrenzender Reinräume mit angedeutetem Strömungsverlauf der Reinatmosphäre,Fig. 3 is a partial section through the lock opening area of two adjacent clean rooms with indicated flow path of the clean atmosphere,

Fig. 4 eine derFig. 3 entsprechende Darstellung bei anderen Innendruckverhältnissen in den beiden aneinander angrenzenden Reinräumen undFig. 4 is a representation corresponding toFig. 3 with different internal pressure ratios in the two adjacent clean rooms and

Fig. 5 eine Teilseitenansicht eines Reinraums im Bereich der Linie V-V inFig. 3.Fig. 5 is a partial side view of a clean room in the line VV inFig. 3.

Für alle entsprechenden Teile werden bei der nachfolgenden Beispielsbeschreibung die gleichen Bezugszeichen verwendet.For all corresponding parts, the following areExample description uses the same reference numerals. 

Beim inFig. 1 schematisch dargestellten Ausführungsbeispiel sind zwei Reinräume1, 1′ mit ihren Stirnseiten2, 2′ nebeneinanderliegend angeordnet, wobei einander zugeordnete Schleusenöffnungen3, 3′ in den Stirnseiten2, 2′ zur Übergabe von Substraten4 miteinander fluchten.In the embodiment shown schematically inFig. 1, two clean rooms1, 1 ' are arranged side by side with their end faces2, 2' , with mutually assigned lock openings3, 3 ' in the end faces2, 2' for transferring substrates4 aligned.

In den Reinräumen1, 1′ ist zur Behandlung der Substrate4 eine besondere Reinatmosphäre und es muß, um Ausschuß bei der Bearbeitung der Substrate4 zu vermeiden, unbedingt verhindert werden, daß aus dem Außenbereich5 Luft geringerer Reinheit in die Reinräume1, 1′ eindringen kann. Dazu herrscht, wie im Ausführungsbeispiel derFig. 3 angedeutet, in den Reinräumen1, 1′ gegenüber dem Außenbereich5 Überdruck, so daß, wie durch die Pfeile inFig. 3 angedeutet, aus den Reinräumen1, 1′ Reinluft zum Außenbereich5 abströmen kann.In the clean rooms1, 1 ' is a special clean atmosphere for the treatment of the substrates4 and, in order to avoid rejects when processing the substrates4 , it is essential to prevent air of lower purity5 from the outside from entering the clean rooms1, 1' can penetrate. There is, as indicated in the embodiment ofFIG. 3, in the clean rooms1, 1 ' compared to the outside5 overpressure, so that, as indicated by the arrows inFig. 3, from the clean rooms1, 1' clean air to the outside5 can.

Um dieses Abströmen zu lenken und zu begrenzen, sind an den Stirnseiten2, 2′ der Reinräume1, 1′ um die Schleusenöffnungen3, 3′ herum Schleusenrahmen6, 6′ angeordnet.In order to direct and limit this outflow, lock frames6, 6 ' are arranged on the end faces2, 2' of the clean rooms1, 1 ' around the lock openings3, 3' .

Die Schleusenrahmen6, 6′ umschließen die Schleusenöffnung3, 3′ mindestens auf zwei gegenüberliegenden Seiten mit Abstand, so daß ein im Querschnitt gegenüber den Schleusenöffnungen3, 3′ größerer Schleusenraum7 zwischen den Stirnseiten2, 2′ und den Schleusenrahmen6, 6′ gebildet wird, der ausreichend Platz für Leitflächen12 bietet, wobei diese Leitflächen12 nicht über die Kontur der Schleusenrahmen6, 6′ hinausragen um einen leichten Austausch der Reinräume1, 1′ zur Wartung oder Reparatur zu ermöglichen.The lock frame6, 6 ' enclose the lock opening3, 3' at least on two opposite sides with a distance, so that a cross-section compared to the lock openings3, 3 ' larger lock space7 between the end faces2, 2' and the lock frame6, 6 ' is formed, which offers sufficient space for guide surfaces12 , these guide surfaces12 not protruding beyond the contour of the lock frame6, 6 'to enable easy replacement of the clean rooms1, 1' for maintenance or repair.

Die Stirnflächen8, 8′ der Schleusenrahmen6, 6′ sind mit den Stirnseiten2, 2′ der Reinräume1, 1′ verklebt, während die gegenüberliegenden Stirnflächen9, 9′ parallel zueinander verlaufend, oben und unten Ausströmzonen10, 10′ bilden, während im seitlichen Bereich, wie inFig. 2 ersichtlich, die Schleusenrahmen6, 6′ durch eine oder mehrere Dichtlippen11 abgedichtet im wesentlichen dicht aneinander anliegen und mit den Seitenkanten der Schleusenöffnungen3, 3′ abschließen.The end faces8, 8 'of the lock frame6, 6' are glued to the end faces2, 2 'of the clean rooms1, 1' , while the opposite end faces9, 9 ' parallel to each other, form outflow zones10, 10' , while in the side area, as can be seen inFig. 2, the lock frame6, 6 ' sealed by one or more sealing lips11 lie substantially close to each other and complete with the side edges of the lock openings3, 3' .

Zur Umlenkung der Strömung aus den Reinräumen1, 1′ sind in den Schleusenöffnungen3, 3′ symmetrisch Leitflächen12 angeordnet, durch die eine 90°-Umlenkung der Luftströmung in die Ausströmzonen10, 10′ erfolgt. Die Leitflächen erstrecken sich über die gesamte Breite der quadratischen Schleusenöffnungen3, 3′ und sind im Ausführungsbeispiel überhöht dick dargestellt.To deflect the flow from the clean rooms1, 1 ' are arranged in the lock openings3, 3' symmetrically guide surfaces12 through which a 90 ° deflection of the air flow into the outflow zones10, 10 ' takes place. The guide surfaces extend over the entire width of the square lock openings3, 3 ' and are shown in the exemplary embodiment exaggerated thick.

Nachdem in den beiden Reinräumen1, 1′ beim inFig. 3 dargestellten Ausführungsbeispiel etwa der gleiche Überdruck gegenüber dem Außenbereich5 herrscht, erfolgt, wie durch die Strömungspfeile angedeutet, eine symmetrische Gasströmung in Richtung zum Außenbereich5. Beim inFig. 4 dargestellten Ausführungsbeispiel ist der Überdruck im Reinraum1 größer als im Reinraum1′, so daß sich eine Strömung entsprechend den eingezeichneten Strömungspfeilen vom Reinraum1 zum Reinraum1′ ergibt. Weitere Gasströme strömen über die Ausströmzonen10, 10′ nach außen, so daß auch hier vom Außenbereich5 keinerlei Luft in die Reinräume1, 1′ eindringen kann. Die Reinräume1, 1′ selbst sind mechanisch praktisch nicht miteinander verbunden, so daß die einzelnen Reinräume1, 1′ leicht ausgetauscht und auch andere Anordnungen getroffen werden können, in denen eine größere Anzahl von Reinräumen1 zur Bearbeitung von Substraten4 in mehreren oder vielen Arbeitsstufen durch die Reinräume1, 1′ hindurch weitertransportiert werden können, ohne daß sie durch die Außenatmosphäre irgendwie verunreinigt werden können.After in the two clean rooms1, 1 ' in the embodiment shown inFIG. 3 there is approximately the same overpressure with respect to the outer region5 , as indicated by the flow arrows, a symmetrical gas flow takes place in the direction of the outer region5 . In the embodiment shown inFig. 4, the overpressure in the clean room1 is greater than in the clean room1 ' , so that there is a flow corresponding to the flow arrows drawn from the clean room1 to the clean room1' . Further gas flows flow out through the outflow zones10, 10 ' , so that here, too, no air can penetrate into the clean rooms1, 1' from the outer region5 . The clean rooms1, 1 ' themselves are practically not mechanically connected to each other, so that the individual clean rooms1, 1' can be easily replaced and other arrangements can be made in which a larger number of clean rooms1 for processing substrates4 in several or many Working stages through the clean rooms1, 1 ' can be transported through without being contaminated by the outside atmosphere.

InFig. 5 ist noch eine Stirnseitenansicht eines Reinraums1 dargestellt, bei der besonders gut die Anordnung der Leitflächen12 erkennbar ist.InFig. 5 is an end view of a clean room1 is also shown, in which particularly the arrangement of the fins can be seen12th

Die von den statischen Druckdifferenzen zwischen den Reinräumen1, 1′ und dem Außenbereich5 beschleunigte aus dem Reinraum1 ausströmende Reinstluft strömt zum Teil direkt durch die Schleusenöffnungen3, 3′ in den Reinraum1′ über. Der andere Teil der Strömung aus dem Reinraum1 wird durch die Leitflächen12 umgelenkt und strömt in den Schleusenraum7. Durch die Querschnittsverengung in den Ausströmzonen10, 10′ durch die Schleusenrahmen6, 6′ wird die Strömung aufgestaut, wodurch ein Teil des dynamischen Druckanteils im Schleusenraum7 in statischen Druck umgewandelt wird, so daß dieser höher ist als der Umgebungsdruck im Außenbereich5. Die Reinstluft aus dem Schleusenraum7 strömt aufgrund dieser Druckdifferenz nun zum Teil in den Reinraum1′. Der verbleibende Anteil strömt durch die Ausströmzonen10, 10′ in den Außenbereich5 ab (Fig. 4). Somit ist sichergestellt, daß auch bei diesen Betriebsverhältnissen keine Luft aus dem Außenbereich5 in die Reinräume1, 1′ eindringen kann.The accelerated from the clean room1 accelerated from the static pressure differences between the clean rooms1, 1 ' and the outer area5 flowing pure air partly flows directly through the lock openings3, 3' into the clean room1 ' . The other part of the flow from the clean room1 is deflected by the guide surfaces12 and flows into the lock room7 . Due to the narrowing of the cross-section in the outflow zones10, 10 ' through the lock frame6, 6' , the flow is dammed up, whereby part of the dynamic pressure component in the lock chamber7 is converted into static pressure, so that it is higher than the ambient pressure in the outer region5 . The ultrapure air from the lock room7 now flows partly into the clean room1 ' due to this pressure difference. The remaining portion flows through the outflow zones10, 10 ' into the outer region5 (Fig. 4). This ensures that even in these operating conditions, no air can penetrate from the outer area5 into the clean rooms1, 1 ' .

Claims (10)

Translated fromGerman
1. Vorrichtung mit mindestens zwei mit ihren Stirnseiten (2, 2′) aneinandergrenzenden Reinräumen (1, 1′) für die Behandlung von Substraten (4), die zum Transport der Substrate (4) über in den Stirnseiten (2, 2′) vorgesehene Schleusenöffnungen (3, 3′) miteinander in Verbindung stehen, wobei in mindestens einem der Reinräume (1, 1′) gegenüber dessen Außenbereich (5) Überdruck herrscht,dadurch gekennzeichnet, daß die beiden aneinander angrenzenden Reinräume (1, 1′) durch einen spaltartigen freien Zwischenraum als Schleusenraum (7) zwischen ihren angrenzenden Stirnseiten (2, 2′) mechanisch voneinander getrennt angeordnet sind, daß die miteinander korrespondierenden Schleusenöffnungen (3, 3′) in den Stirnseiten (2, 2′) von mindestens einem Schleusenrahmen (6, 6′) umschlossen sind, durch den eine Drosselung der Überdruckgasströmung Schleusenöffnungen (3, 3′) - Außenbereich (5) erfolgt.1. Device with at least two with their end faces (2, 2 ' ) adjoining clean rooms (1, 1' ) for the treatment of substrates (4 ) which are used to transport the substrates (4 ) in the end faces (2, 2 ' ) The proposed lock openings (3, 3 ' ) are connected to one another, with overpressure prevailing in at least one of the clean rooms (1, 1' ) with respect to its outer area (5 ),characterized in that the two adjacent clean rooms (1, 1 ' ) pass through a gap-like free space as a lock space (7 ) between their adjacent end faces (2, 2 ' ) are mechanically separated from each other, that the corresponding lock openings (3, 3' ) in the end faces (2, 2 ' ) of at least one lock frame (6, 6 ' ) are enclosed, through which throttling the pressurized gas flow lock openings (3, 3' ) - outside area (5 ).2. Vorrichtung nach Anspruch 1, dadurch gekennzeichnet, daß der Schleusenrahmen (6, 6′) die Schleusenöffnung (3, 3′) mindestens auf zwei gegenüberliegenden Seiten mit Randabstand umschließt und so einen Schleusenraum (7) mit größerem Querschnitt als die Schleusenöffnungen (3, 3′) bildet.2. Device according to claim 1, characterized in that the lock frame (6, 6 ' ) encloses the lock opening (3, 3' ) at least on two opposite sides with edge spacing and thus a lock chamber (7 ) with a larger cross section than the lock openings (3 , 3 ′ ) forms.3. Vorrichtung nach Anspruch 2, dadurch gekennzeichnet, daß im Randbereich mindestens einer der Schleusenöffnungen (3, 3′) mindestens eine Leitfläche (12) vorgesehen ist, durch die eine etwa 90°-Umlenkung der Gasströmung im Randbereich der Schleusenöffnung (3, 3′) erfolgt.3. Apparatus according to claim 2, characterized in that in the edge region at least one of the lock openings (3, 3 ' ) at least one guide surface (12 ) is provided, through which an approximately 90 ° deflection of the gas flow in the edge region of the lock opening (3, 3rd ' ) Takes place.4. Vorrichtung nach Anspruch 3, dadurch gekennzeichnet, daß der bzw. die Schleusenrahmen (6, 6′) parallele Stirnflächen (8, 8′, 9, 9′) aufweisen, von denen eine dicht mit der Stirnseite (2, 2′) des zugeordneten Reinraums (1, 1′) verbunden ist und die andere (9, 9′) mit der Stirnseite (2, 2′) des angrenzenden Reinraums (1, 1′) oder ggf. mit der Stirnfläche (9, 9′) des angrenzenden Schleusenrahmens (6, 6′) des angrenzenden Reinraums (1, 1′) zusammenwirkt.4. The device according to claim 3, characterized in that the or the lock frame (6, 6 ' ) have parallel end faces (8, 8', 9, 9 ' ), one of which is tight with the end face (2, 2' ) of the associated clean room (1, 1 ' ) and the other (9, 9' ) with the end face (2, 2 ' ) of the adjacent clean room (1, 1' ) or possibly with the end face (9, 9 ' ) of the adjacent lock frame (6, 6 ' ) of the adjacent clean room (1, 1' ) cooperates.5. Vorrichtung nach Anspruch 3 und 4, dadurch gekennzeichnet, daß die Leitflächen (12) einer Schleusenöffnung (3, 3′) die Stirnflächen (9, 9′) des sie umschließenden Schleusenrahmens (6, 6′) nicht überragen und innerhalb der lichten Weite des Schleusenrahmens (6, 6′) angeordnet sind.5. Apparatus according to claim 3 and 4, characterized in that the guide surfaces (12 ) of a lock opening (3, 3 ' ) the end faces (9, 9' ) of the surrounding lock frame (6, 6 ' ) do not protrude and within the clear Width of the lock frame (6, 6 ' ) are arranged.6. Vorrichtung nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, daß die Schleusenrahmen (6, 6′) und die Leitflächen (12) der aneinander angrenzenden Reinräume (1, 1′) symmetrisch gleich ausgebildet sind.6. Device according to one of claims 1 to 5, characterized in that the lock frame (6, 6 ' ) and the guide surfaces (12 ) of the adjacent clean rooms (1, 1' ) are formed symmetrically the same.7. Vorrichtung nach einem der Ansprüche 1 bis 6, dadurch gekennzeichnet, daß die Schleusenrahmen (6, 6′) zweier aneinander angrenzender Reinräume (1, 1′) mindestens an zwei gegenüberliegenden Seiten aneinander anliegen.7. Device according to one of claims 1 to 6, characterized in that the lock frame (6, 6 ' ) of two adjacent clean rooms (1, 1' ) abut against each other at least on two opposite sides.8. Vorrichtung nach Anspruch 7, dadurch gekennzeichnet, daß mindestens einer der aneinander anliegenden Schleusenrahmen (6, 6′) auf mindestens einer Seite mit einer Dichtlippe (11) vorzugsweise in Form mindestens einer Leiste oder eines Wulstes versehen ist.8. The device according to claim 7, characterized in that at least one of the abutting lock frame (6, 6 ' ) is provided on at least one side with a sealing lip (11 ) preferably in the form of at least one bar or a bead.9. Vorrichtung nach Anspruch 8, dadurch gekennzeichnet, daß die Dichtlippe (11) Durchströmkanäle freiläßt und dazu Aussparungen oder Durchbrüche in der Dichtlippe (11) selbst oder in der Gegenfläche des angrenzenden mit der Dichtlippe zusammenwirkenden Außenrahmens (6, 6′) oder der angrenzenden Stirnseite (2, 2′) vorgesehen sind.9. The device according to claim 8, characterized in that the sealing lip (11 ) leaves flow channels and recesses or openings in the sealing lip (11 ) itself or in the counter surface of the adjacent cooperating with the sealing lip outer frame (6, 6 ' ) or the adjacent End face (2, 2 ' ) are provided.10. Vorrichtung nach Anspruch 9, dadurch gekennzeichnet, daß der Strömungskanal oder die Strömungskanäle insbesondere in nahen Bereichen der Schleusenöffnungen (3, 3′) vorgesehen sind.10. The device according to claim 9, characterized in that the flow channel or the flow channels are provided in particular in the vicinity of the lock openings (3, 3 ' ).
DE3836696A1988-10-281988-10-28Lock for transporting material between clean roomsExpiredDE3836696C1 (en)

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Cited By (320)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
WO1999065064A1 (en)*1998-06-051999-12-16A.S.M. International N.V.Method and device for transferring wafers
DE19947781C1 (en)*1999-10-022000-12-21Bosch Gmbh RobertAir feed method for clean room work space e.g. for pharmaceuticals packaging, has fan and air filter providing laminar air flow with air pressure ratio preventing contamination between work space and outside air
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US11447864B2 (en)2019-04-192022-09-20Asm Ip Holding B.V.Layer forming method and apparatus
USD965044S1 (en)2019-08-192022-09-27Asm Ip Holding B.V.Susceptor shaft
US11453943B2 (en)2016-05-252022-09-27Asm Ip Holding B.V.Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
USD965524S1 (en)2019-08-192022-10-04Asm Ip Holding B.V.Susceptor support
US11469098B2 (en)2018-05-082022-10-11Asm Ip Holding B.V.Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
US11473195B2 (en)2018-03-012022-10-18Asm Ip Holding B.V.Semiconductor processing apparatus and a method for processing a substrate
US11476109B2 (en)2019-06-112022-10-18Asm Ip Holding B.V.Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
US11482418B2 (en)2018-02-202022-10-25Asm Ip Holding B.V.Substrate processing method and apparatus
US11482533B2 (en)2019-02-202022-10-25Asm Ip Holding B.V.Apparatus and methods for plug fill deposition in 3-D NAND applications
US11482412B2 (en)2018-01-192022-10-25Asm Ip Holding B.V.Method for depositing a gap-fill layer by plasma-assisted deposition
US11488854B2 (en)2020-03-112022-11-01Asm Ip Holding B.V.Substrate handling device with adjustable joints
US11488819B2 (en)2018-12-042022-11-01Asm Ip Holding B.V.Method of cleaning substrate processing apparatus
US11492703B2 (en)2018-06-272022-11-08Asm Ip Holding B.V.Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11495459B2 (en)2019-09-042022-11-08Asm Ip Holding B.V.Methods for selective deposition using a sacrificial capping layer
US11499222B2 (en)2018-06-272022-11-15Asm Ip Holding B.V.Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11499226B2 (en)2018-11-022022-11-15Asm Ip Holding B.V.Substrate supporting unit and a substrate processing device including the same
US11501968B2 (en)2019-11-152022-11-15Asm Ip Holding B.V.Method for providing a semiconductor device with silicon filled gaps
US11515187B2 (en)2020-05-012022-11-29Asm Ip Holding B.V.Fast FOUP swapping with a FOUP handler
US11515188B2 (en)2019-05-162022-11-29Asm Ip Holding B.V.Wafer boat handling device, vertical batch furnace and method
US11521851B2 (en)2020-02-032022-12-06Asm Ip Holding B.V.Method of forming structures including a vanadium or indium layer
US11527400B2 (en)2019-08-232022-12-13Asm Ip Holding B.V.Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
US11527403B2 (en)2019-12-192022-12-13Asm Ip Holding B.V.Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11530483B2 (en)2018-06-212022-12-20Asm Ip Holding B.V.Substrate processing system
US11532757B2 (en)2016-10-272022-12-20Asm Ip Holding B.V.Deposition of charge trapping layers
US11530876B2 (en)2020-04-242022-12-20Asm Ip Holding B.V.Vertical batch furnace assembly comprising a cooling gas supply
US11551912B2 (en)2020-01-202023-01-10Asm Ip Holding B.V.Method of forming thin film and method of modifying surface of thin film
US11551925B2 (en)2019-04-012023-01-10Asm Ip Holding B.V.Method for manufacturing a semiconductor device
USD975665S1 (en)2019-05-172023-01-17Asm Ip Holding B.V.Susceptor shaft
US11557474B2 (en)2019-07-292023-01-17Asm Ip Holding B.V.Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
US11562901B2 (en)2019-09-252023-01-24Asm Ip Holding B.V.Substrate processing method
US11572620B2 (en)2018-11-062023-02-07Asm Ip Holding B.V.Methods for selectively depositing an amorphous silicon film on a substrate
US11581186B2 (en)2016-12-152023-02-14Asm Ip Holding B.V.Sequential infiltration synthesis apparatus
US11587815B2 (en)2019-07-312023-02-21Asm Ip Holding B.V.Vertical batch furnace assembly
US11587814B2 (en)2019-07-312023-02-21Asm Ip Holding B.V.Vertical batch furnace assembly
US11594600B2 (en)2019-11-052023-02-28Asm Ip Holding B.V.Structures with doped semiconductor layers and methods and systems for forming same
USD979506S1 (en)2019-08-222023-02-28Asm Ip Holding B.V.Insulator
US11594450B2 (en)2019-08-222023-02-28Asm Ip Holding B.V.Method for forming a structure with a hole
USD980813S1 (en)2021-05-112023-03-14Asm Ip Holding B.V.Gas flow control plate for substrate processing apparatus
US11605528B2 (en)2019-07-092023-03-14Asm Ip Holding B.V.Plasma device using coaxial waveguide, and substrate treatment method
USD980814S1 (en)2021-05-112023-03-14Asm Ip Holding B.V.Gas distributor for substrate processing apparatus
US11610775B2 (en)2016-07-282023-03-21Asm Ip Holding B.V.Method and apparatus for filling a gap
US11610774B2 (en)2019-10-022023-03-21Asm Ip Holding B.V.Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process
US11615970B2 (en)2019-07-172023-03-28Asm Ip Holding B.V.Radical assist ignition plasma system and method
USD981973S1 (en)2021-05-112023-03-28Asm Ip Holding B.V.Reactor wall for substrate processing apparatus
US11626308B2 (en)2020-05-132023-04-11Asm Ip Holding B.V.Laser alignment fixture for a reactor system
US11626316B2 (en)2019-11-202023-04-11Asm Ip Holding B.V.Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
US11629407B2 (en)2019-02-222023-04-18Asm Ip Holding B.V.Substrate processing apparatus and method for processing substrates
US11629406B2 (en)2018-03-092023-04-18Asm Ip Holding B.V.Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11637011B2 (en)2019-10-162023-04-25Asm Ip Holding B.V.Method of topology-selective film formation of silicon oxide
US11637014B2 (en)2019-10-172023-04-25Asm Ip Holding B.V.Methods for selective deposition of doped semiconductor material
US11639548B2 (en)2019-08-212023-05-02Asm Ip Holding B.V.Film-forming material mixed-gas forming device and film forming device
US11639811B2 (en)2017-11-272023-05-02Asm Ip Holding B.V.Apparatus including a clean mini environment
US11646204B2 (en)2020-06-242023-05-09Asm Ip Holding B.V.Method for forming a layer provided with silicon
US11646205B2 (en)2019-10-292023-05-09Asm Ip Holding B.V.Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
US11646184B2 (en)2019-11-292023-05-09Asm Ip Holding B.V.Substrate processing apparatus
US11643724B2 (en)2019-07-182023-05-09Asm Ip Holding B.V.Method of forming structures using a neutral beam
US11644758B2 (en)2020-07-172023-05-09Asm Ip Holding B.V.Structures and methods for use in photolithography
US11649546B2 (en)2016-07-082023-05-16Asm Ip Holding B.V.Organic reactants for atomic layer deposition
US11658035B2 (en)2020-06-302023-05-23Asm Ip Holding B.V.Substrate processing method
US11658030B2 (en)2017-03-292023-05-23Asm Ip Holding B.V.Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US11658029B2 (en)2018-12-142023-05-23Asm Ip Holding B.V.Method of forming a device structure using selective deposition of gallium nitride and system for same
US11664199B2 (en)2018-10-192023-05-30Asm Ip Holding B.V.Substrate processing apparatus and substrate processing method
US11664245B2 (en)2019-07-162023-05-30Asm Ip Holding B.V.Substrate processing device
US11664267B2 (en)2019-07-102023-05-30Asm Ip Holding B.V.Substrate support assembly and substrate processing device including the same
US11674220B2 (en)2020-07-202023-06-13Asm Ip Holding B.V.Method for depositing molybdenum layers using an underlayer
US11680839B2 (en)2019-08-052023-06-20Asm Ip Holding B.V.Liquid level sensor for a chemical source vessel
USD990534S1 (en)2020-09-112023-06-27Asm Ip Holding B.V.Weighted lift pin
US11688603B2 (en)2019-07-172023-06-27Asm Ip Holding B.V.Methods of forming silicon germanium structures
USD990441S1 (en)2021-09-072023-06-27Asm Ip Holding B.V.Gas flow control plate
US11685991B2 (en)2018-02-142023-06-27Asm Ip Holding B.V.Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US11705333B2 (en)2020-05-212023-07-18Asm Ip Holding B.V.Structures including multiple carbon layers and methods of forming and using same
US11718913B2 (en)2018-06-042023-08-08Asm Ip Holding B.V.Gas distribution system and reactor system including same
US11725280B2 (en)2020-08-262023-08-15Asm Ip Holding B.V.Method for forming metal silicon oxide and metal silicon oxynitride layers
US11725277B2 (en)2011-07-202023-08-15Asm Ip Holding B.V.Pressure transmitter for a semiconductor processing environment
US11735422B2 (en)2019-10-102023-08-22Asm Ip Holding B.V.Method of forming a photoresist underlayer and structure including same
US11742189B2 (en)2015-03-122023-08-29Asm Ip Holding B.V.Multi-zone reactor, system including the reactor, and method of using the same
US11742198B2 (en)2019-03-082023-08-29Asm Ip Holding B.V.Structure including SiOCN layer and method of forming same
US11767589B2 (en)2020-05-292023-09-26Asm Ip Holding B.V.Substrate processing device
US11769682B2 (en)2017-08-092023-09-26Asm Ip Holding B.V.Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11776846B2 (en)2020-02-072023-10-03Asm Ip Holding B.V.Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en)2020-02-172023-10-10Asm Ip Holding B.V.Method for depositing low temperature phosphorous-doped silicon
US11781221B2 (en)2019-05-072023-10-10Asm Ip Holding B.V.Chemical source vessel with dip tube
US11804364B2 (en)2020-05-192023-10-31Asm Ip Holding B.V.Substrate processing apparatus
US11814747B2 (en)2019-04-242023-11-14Asm Ip Holding B.V.Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly
US11823866B2 (en)2020-04-022023-11-21Asm Ip Holding B.V.Thin film forming method
US11821078B2 (en)2020-04-152023-11-21Asm Ip Holding B.V.Method for forming precoat film and method for forming silicon-containing film
US11823876B2 (en)2019-09-052023-11-21Asm Ip Holding B.V.Substrate processing apparatus
US11830738B2 (en)2020-04-032023-11-28Asm Ip Holding B.V.Method for forming barrier layer and method for manufacturing semiconductor device
US11827981B2 (en)2020-10-142023-11-28Asm Ip Holding B.V.Method of depositing material on stepped structure
US11828707B2 (en)2020-02-042023-11-28Asm Ip Holding B.V.Method and apparatus for transmittance measurements of large articles
US11830730B2 (en)2017-08-292023-11-28Asm Ip Holding B.V.Layer forming method and apparatus
US11840761B2 (en)2019-12-042023-12-12Asm Ip Holding B.V.Substrate processing apparatus
US11876356B2 (en)2020-03-112024-01-16Asm Ip Holding B.V.Lockout tagout assembly and system and method of using same
US11873557B2 (en)2020-10-222024-01-16Asm Ip Holding B.V.Method of depositing vanadium metal
US11885023B2 (en)2018-10-012024-01-30Asm Ip Holding B.V.Substrate retaining apparatus, system including the apparatus, and method of using same
US11887857B2 (en)2020-04-242024-01-30Asm Ip Holding B.V.Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
US11885013B2 (en)2019-12-172024-01-30Asm Ip Holding B.V.Method of forming vanadium nitride layer and structure including the vanadium nitride layer
USD1012873S1 (en)2020-09-242024-01-30Asm Ip Holding B.V.Electrode for semiconductor processing apparatus
US11885020B2 (en)2020-12-222024-01-30Asm Ip Holding B.V.Transition metal deposition method
US11891696B2 (en)2020-11-302024-02-06Asm Ip Holding B.V.Injector configured for arrangement within a reaction chamber of a substrate processing apparatus
US11898243B2 (en)2020-04-242024-02-13Asm Ip Holding B.V.Method of forming vanadium nitride-containing layer
US11901179B2 (en)2020-10-282024-02-13Asm Ip Holding B.V.Method and device for depositing silicon onto substrates
US11915929B2 (en)2019-11-262024-02-27Asm Ip Holding B.V.Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
US11923181B2 (en)2019-11-292024-03-05Asm Ip Holding B.V.Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing
US11929251B2 (en)2019-12-022024-03-12Asm Ip Holding B.V.Substrate processing apparatus having electrostatic chuck and substrate processing method
US11940785B2 (en)2020-10-152024-03-26Asm Ip Holding B.V.Method for predicting maintenance for components used in substrate treatments, and predictive maintenance device
US11946137B2 (en)2020-12-162024-04-02Asm Ip Holding B.V.Runout and wobble measurement fixtures
US11959168B2 (en)2020-04-292024-04-16Asm Ip Holding B.V.Solid source precursor vessel
US11961741B2 (en)2020-03-122024-04-16Asm Ip Holding B.V.Method for fabricating layer structure having target topological profile
US11967488B2 (en)2013-02-012024-04-23Asm Ip Holding B.V.Method for treatment of deposition reactor
US11976359B2 (en)2020-01-062024-05-07Asm Ip Holding B.V.Gas supply assembly, components thereof, and reactor system including same
US11986868B2 (en)2020-02-282024-05-21Asm Ip Holding B.V.System dedicated for parts cleaning
US11987881B2 (en)2020-05-222024-05-21Asm Ip Holding B.V.Apparatus for depositing thin films using hydrogen peroxide
US11993847B2 (en)2020-01-082024-05-28Asm Ip Holding B.V.Injector
US11996292B2 (en)2019-10-252024-05-28Asm Ip Holding B.V.Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11996309B2 (en)2019-05-162024-05-28Asm Ip Holding B.V.Wafer boat handling device, vertical batch furnace and method
US11993843B2 (en)2017-08-312024-05-28Asm Ip Holding B.V.Substrate processing apparatus
US11996289B2 (en)2020-04-162024-05-28Asm Ip Holding B.V.Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
US12009241B2 (en)2019-10-142024-06-11Asm Ip Holding B.V.Vertical batch furnace assembly with detector to detect cassette
US12006572B2 (en)2019-10-082024-06-11Asm Ip Holding B.V.Reactor system including a gas distribution assembly for use with activated species and method of using same
US12009224B2 (en)2020-09-292024-06-11Asm Ip Holding B.V.Apparatus and method for etching metal nitrides
US12020934B2 (en)2020-07-082024-06-25Asm Ip Holding B.V.Substrate processing method
US12025484B2 (en)2018-05-082024-07-02Asm Ip Holding B.V.Thin film forming method
US12027365B2 (en)2020-11-242024-07-02Asm Ip Holding B.V.Methods for filling a gap and related systems and devices
US12033885B2 (en)2020-01-062024-07-09Asm Ip Holding B.V.Channeled lift pin
US12040177B2 (en)2020-08-182024-07-16Asm Ip Holding B.V.Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
US12040200B2 (en)2017-06-202024-07-16Asm Ip Holding B.V.Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US12040199B2 (en)2018-11-282024-07-16Asm Ip Holding B.V.Substrate processing apparatus for processing substrates
US12051567B2 (en)2020-10-072024-07-30Asm Ip Holding B.V.Gas supply unit and substrate processing apparatus including gas supply unit
US12057314B2 (en)2020-05-152024-08-06Asm Ip Holding B.V.Methods for silicon germanium uniformity control using multiple precursors
US12074022B2 (en)2020-08-272024-08-27Asm Ip Holding B.V.Method and system for forming patterned structures using multiple patterning process
US12087586B2 (en)2020-04-152024-09-10Asm Ip Holding B.V.Method of forming chromium nitride layer and structure including the chromium nitride layer
US12106944B2 (en)2020-06-022024-10-01Asm Ip Holding B.V.Rotating substrate support
US12107005B2 (en)2020-10-062024-10-01Asm Ip Holding B.V.Deposition method and an apparatus for depositing a silicon-containing material
US12112940B2 (en)2019-07-192024-10-08Asm Ip Holding B.V.Method of forming topology-controlled amorphous carbon polymer film
US12125700B2 (en)2020-01-162024-10-22Asm Ip Holding B.V.Method of forming high aspect ratio features
US12129545B2 (en)2020-12-222024-10-29Asm Ip Holding B.V.Precursor capsule, a vessel and a method
US12131885B2 (en)2020-12-222024-10-29Asm Ip Holding B.V.Plasma treatment device having matching box
US12148609B2 (en)2020-09-162024-11-19Asm Ip Holding B.V.Silicon oxide deposition method
US12154824B2 (en)2020-08-142024-11-26Asm Ip Holding B.V.Substrate processing method
US12159788B2 (en)2020-12-142024-12-03Asm Ip Holding B.V.Method of forming structures for threshold voltage control
US12169361B2 (en)2019-07-302024-12-17Asm Ip Holding B.V.Substrate processing apparatus and method
US12173404B2 (en)2020-03-172024-12-24Asm Ip Holding B.V.Method of depositing epitaxial material, structure formed using the method, and system for performing the method
US12195852B2 (en)2020-11-232025-01-14Asm Ip Holding B.V.Substrate processing apparatus with an injector
US12209308B2 (en)2020-11-122025-01-28Asm Ip Holding B.V.Reactor and related methods
US12211742B2 (en)2020-09-102025-01-28Asm Ip Holding B.V.Methods for depositing gap filling fluid
US12217954B2 (en)2020-08-252025-02-04Asm Ip Holding B.V.Method of cleaning a surface
US12218269B2 (en)2020-02-132025-02-04Asm Ip Holding B.V.Substrate processing apparatus including light receiving device and calibration method of light receiving device
USD1060598S1 (en)2021-12-032025-02-04Asm Ip Holding B.V.Split showerhead cover
US12217946B2 (en)2020-10-152025-02-04Asm Ip Holding B.V.Method of manufacturing semiconductor device, and substrate treatment apparatus using ether-CAT
US12218000B2 (en)2020-09-252025-02-04Asm Ip Holding B.V.Semiconductor processing method
US12221357B2 (en)2020-04-242025-02-11Asm Ip Holding B.V.Methods and apparatus for stabilizing vanadium compounds
US12230531B2 (en)2018-04-092025-02-18Asm Ip Holding B.V.Substrate supporting apparatus, substrate processing apparatus including the same, and substrate processing method
US12243742B2 (en)2020-04-212025-03-04Asm Ip Holding B.V.Method for processing a substrate
US12243747B2 (en)2020-04-242025-03-04Asm Ip Holding B.V.Methods of forming structures including vanadium boride and vanadium phosphide layers
US12240760B2 (en)2016-03-182025-03-04Asm Ip Holding B.V.Aligned carbon nanotubes
US12243757B2 (en)2020-05-212025-03-04Asm Ip Holding B.V.Flange and apparatus for processing substrates
US12241158B2 (en)2020-07-202025-03-04Asm Ip Holding B.V.Method for forming structures including transition metal layers
US12247286B2 (en)2019-08-092025-03-11Asm Ip Holding B.V.Heater assembly including cooling apparatus and method of using same
US12252785B2 (en)2019-06-102025-03-18Asm Ip Holding B.V.Method for cleaning quartz epitaxial chambers
US12255053B2 (en)2020-12-102025-03-18Asm Ip Holding B.V.Methods and systems for depositing a layer
US12266524B2 (en)2020-06-162025-04-01Asm Ip Holding B.V.Method for depositing boron containing silicon germanium layers
US12272527B2 (en)2018-05-092025-04-08Asm Ip Holding B.V.Apparatus for use with hydrogen radicals and method of using same
US12276023B2 (en)2017-08-042025-04-15Asm Ip Holding B.V.Showerhead assembly for distributing a gas within a reaction chamber
US12278129B2 (en)2020-03-042025-04-15Asm Ip Holding B.V.Alignment fixture for a reactor system
US12288710B2 (en)2020-12-182025-04-29Asm Ip Holding B.V.Wafer processing apparatus with a rotatable table
US12322591B2 (en)2020-07-272025-06-03Asm Ip Holding B.V.Thin film deposition process
US12378665B2 (en)2018-10-262025-08-05Asm Ip Holding B.V.High temperature coatings for a preclean and etch apparatus and related methods
US12406846B2 (en)2020-05-262025-09-02Asm Ip Holding B.V.Method for depositing boron and gallium containing silicon germanium layers
US12410515B2 (en)2020-01-292025-09-09Asm Ip Holding B.V.Contaminant trap system for a reactor system
US12431334B2 (en)2020-02-132025-09-30Asm Ip Holding B.V.Gas distribution assembly
US12428726B2 (en)2019-10-082025-09-30Asm Ip Holding B.V.Gas injection system and reactor system including same
US12431354B2 (en)2020-07-012025-09-30Asm Ip Holding B.V.Silicon nitride and silicon oxide deposition methods using fluorine inhibitor
US12442082B2 (en)2021-05-042025-10-14Asm Ip Holding B.V.Reactor system comprising a tuning circuit

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NICHTS ERMITTELT*

Cited By (402)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US6481945B1 (en)1998-06-052002-11-19Asm International N.V.Method and device for transferring wafers
WO1999065064A1 (en)*1998-06-051999-12-16A.S.M. International N.V.Method and device for transferring wafers
DE19947781C1 (en)*1999-10-022000-12-21Bosch Gmbh RobertAir feed method for clean room work space e.g. for pharmaceuticals packaging, has fan and air filter providing laminar air flow with air pressure ratio preventing contamination between work space and outside air
WO2001025694A1 (en)*1999-10-022001-04-12Robert Bosch GmbhMethod and device for introduction of air into a processing chamber
US10844486B2 (en)2009-04-062020-11-24Asm Ip Holding B.V.Semiconductor processing reactor and components thereof
US10804098B2 (en)2009-08-142020-10-13Asm Ip Holding B.V.Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US10707106B2 (en)2011-06-062020-07-07Asm Ip Holding B.V.High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US10854498B2 (en)2011-07-152020-12-01Asm Ip Holding B.V.Wafer-supporting device and method for producing same
US11725277B2 (en)2011-07-202023-08-15Asm Ip Holding B.V.Pressure transmitter for a semiconductor processing environment
US10832903B2 (en)2011-10-282020-11-10Asm Ip Holding B.V.Process feed management for semiconductor substrate processing
US10714315B2 (en)2012-10-122020-07-14Asm Ip Holdings B.V.Semiconductor reaction chamber showerhead
US11501956B2 (en)2012-10-122022-11-15Asm Ip Holding B.V.Semiconductor reaction chamber showerhead
US11967488B2 (en)2013-02-012024-04-23Asm Ip Holding B.V.Method for treatment of deposition reactor
US10683571B2 (en)2014-02-252020-06-16Asm Ip Holding B.V.Gas supply manifold and method of supplying gases to chamber using same
US10604847B2 (en)2014-03-182020-03-31Asm Ip Holding B.V.Gas distribution system, reactor including the system, and methods of using the same
US11015245B2 (en)2014-03-192021-05-25Asm Ip Holding B.V.Gas-phase reactor and system having exhaust plenum and components thereof
US10858737B2 (en)2014-07-282020-12-08Asm Ip Holding B.V.Showerhead assembly and components thereof
US10787741B2 (en)2014-08-212020-09-29Asm Ip Holding B.V.Method and system for in situ formation of gas-phase compounds
US10561975B2 (en)2014-10-072020-02-18Asm Ip Holdings B.V.Variable conductance gas distribution apparatus and method
US10941490B2 (en)2014-10-072021-03-09Asm Ip Holding B.V.Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US11795545B2 (en)2014-10-072023-10-24Asm Ip Holding B.V.Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US11742189B2 (en)2015-03-122023-08-29Asm Ip Holding B.V.Multi-zone reactor, system including the reactor, and method of using the same
US11242598B2 (en)2015-06-262022-02-08Asm Ip Holding B.V.Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en)2015-07-072020-03-24Asm Ip Holding B.V.Magnetic susceptor to baseplate seal
US11233133B2 (en)2015-10-212022-01-25Asm Ip Holding B.V.NbMC layers
US11956977B2 (en)2015-12-292024-04-09Asm Ip Holding B.V.Atomic layer deposition of III-V compounds to form V-NAND devices
US11139308B2 (en)2015-12-292021-10-05Asm Ip Holding B.V.Atomic layer deposition of III-V compounds to form V-NAND devices
US11676812B2 (en)2016-02-192023-06-13Asm Ip Holding B.V.Method for forming silicon nitride film selectively on top/bottom portions
US10720322B2 (en)2016-02-192020-07-21Asm Ip Holding B.V.Method for forming silicon nitride film selectively on top surface
US12240760B2 (en)2016-03-182025-03-04Asm Ip Holding B.V.Aligned carbon nanotubes
US10851456B2 (en)2016-04-212020-12-01Asm Ip Holding B.V.Deposition of metal borides
US10865475B2 (en)2016-04-212020-12-15Asm Ip Holding B.V.Deposition of metal borides and silicides
US10665452B2 (en)2016-05-022020-05-26Asm Ip Holdings B.V.Source/drain performance through conformal solid state doping
US11101370B2 (en)2016-05-022021-08-24Asm Ip Holding B.V.Method of forming a germanium oxynitride film
US11453943B2 (en)2016-05-252022-09-27Asm Ip Holding B.V.Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US11749562B2 (en)2016-07-082023-09-05Asm Ip Holding B.V.Selective deposition method to form air gaps
US11649546B2 (en)2016-07-082023-05-16Asm Ip Holding B.V.Organic reactants for atomic layer deposition
US11094582B2 (en)2016-07-082021-08-17Asm Ip Holding B.V.Selective deposition method to form air gaps
US10714385B2 (en)2016-07-192020-07-14Asm Ip Holding B.V.Selective deposition of tungsten
US11107676B2 (en)2016-07-282021-08-31Asm Ip Holding B.V.Method and apparatus for filling a gap
US11694892B2 (en)2016-07-282023-07-04Asm Ip Holding B.V.Method and apparatus for filling a gap
US11610775B2 (en)2016-07-282023-03-21Asm Ip Holding B.V.Method and apparatus for filling a gap
US10741385B2 (en)2016-07-282020-08-11Asm Ip Holding B.V.Method and apparatus for filling a gap
US11205585B2 (en)2016-07-282021-12-21Asm Ip Holding B.V.Substrate processing apparatus and method of operating the same
US10643826B2 (en)2016-10-262020-05-05Asm Ip Holdings B.V.Methods for thermally calibrating reaction chambers
US10943771B2 (en)2016-10-262021-03-09Asm Ip Holding B.V.Methods for thermally calibrating reaction chambers
US11532757B2 (en)2016-10-272022-12-20Asm Ip Holding B.V.Deposition of charge trapping layers
US10643904B2 (en)2016-11-012020-05-05Asm Ip Holdings B.V.Methods for forming a semiconductor device and related semiconductor device structures
US11810788B2 (en)2016-11-012023-11-07Asm Ip Holding B.V.Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10714350B2 (en)2016-11-012020-07-14ASM IP Holdings, B.V.Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10720331B2 (en)2016-11-012020-07-21ASM IP Holdings, B.V.Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10622375B2 (en)2016-11-072020-04-14Asm Ip Holding B.V.Method of processing a substrate and a device manufactured by using the method
US10644025B2 (en)2016-11-072020-05-05Asm Ip Holding B.V.Method of processing a substrate and a device manufactured by using the method
US10934619B2 (en)2016-11-152021-03-02Asm Ip Holding B.V.Gas supply unit and substrate processing apparatus including the gas supply unit
US11396702B2 (en)2016-11-152022-07-26Asm Ip Holding B.V.Gas supply unit and substrate processing apparatus including the gas supply unit
US11222772B2 (en)2016-12-142022-01-11Asm Ip Holding B.V.Substrate processing apparatus
US11581186B2 (en)2016-12-152023-02-14Asm Ip Holding B.V.Sequential infiltration synthesis apparatus
US12000042B2 (en)2016-12-152024-06-04Asm Ip Holding B.V.Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11447861B2 (en)2016-12-152022-09-20Asm Ip Holding B.V.Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11851755B2 (en)2016-12-152023-12-26Asm Ip Holding B.V.Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11970766B2 (en)2016-12-152024-04-30Asm Ip Holding B.V.Sequential infiltration synthesis apparatus
US11001925B2 (en)2016-12-192021-05-11Asm Ip Holding B.V.Substrate processing apparatus
US11251035B2 (en)2016-12-222022-02-15Asm Ip Holding B.V.Method of forming a structure on a substrate
US10784102B2 (en)2016-12-222020-09-22Asm Ip Holding B.V.Method of forming a structure on a substrate
US10867788B2 (en)2016-12-282020-12-15Asm Ip Holding B.V.Method of forming a structure on a substrate
US11390950B2 (en)2017-01-102022-07-19Asm Ip Holding B.V.Reactor system and method to reduce residue buildup during a film deposition process
US12043899B2 (en)2017-01-102024-07-23Asm Ip Holding B.V.Reactor system and method to reduce residue buildup during a film deposition process
US10655221B2 (en)2017-02-092020-05-19Asm Ip Holding B.V.Method for depositing oxide film by thermal ALD and PEALD
US12106965B2 (en)2017-02-152024-10-01Asm Ip Holding B.V.Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US11410851B2 (en)2017-02-152022-08-09Asm Ip Holding B.V.Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US11658030B2 (en)2017-03-292023-05-23Asm Ip Holding B.V.Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
USD876504S1 (en)2017-04-032020-02-25Asm Ip Holding B.V.Exhaust flow control ring for semiconductor deposition apparatus
US10950432B2 (en)2017-04-252021-03-16Asm Ip Holding B.V.Method of depositing thin film and method of manufacturing semiconductor device
US10714335B2 (en)2017-04-252020-07-14Asm Ip Holding B.V.Method of depositing thin film and method of manufacturing semiconductor device
US10892156B2 (en)2017-05-082021-01-12Asm Ip Holding B.V.Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US11848200B2 (en)2017-05-082023-12-19Asm Ip Holding B.V.Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10770286B2 (en)2017-05-082020-09-08Asm Ip Holdings B.V.Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US12040200B2 (en)2017-06-202024-07-16Asm Ip Holding B.V.Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11976361B2 (en)2017-06-282024-05-07Asm Ip Holding B.V.Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US11306395B2 (en)2017-06-282022-04-19Asm Ip Holding B.V.Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en)2017-07-052020-06-16Asm Ip Holdings B.V.Methods for forming a silicon germanium tin layer and related semiconductor device structures
US11164955B2 (en)2017-07-182021-11-02Asm Ip Holding B.V.Methods for forming a semiconductor device structure and related semiconductor device structures
US10734497B2 (en)2017-07-182020-08-04Asm Ip Holding B.V.Methods for forming a semiconductor device structure and related semiconductor device structures
US11695054B2 (en)2017-07-182023-07-04Asm Ip Holding B.V.Methods for forming a semiconductor device structure and related semiconductor device structures
US11004977B2 (en)2017-07-192021-05-11Asm Ip Holding B.V.Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en)2017-07-192021-05-25Asm Ip Holding B.V.Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US11374112B2 (en)2017-07-192022-06-28Asm Ip Holding B.V.Method for depositing a group IV semiconductor and related semiconductor device structures
US12363960B2 (en)2017-07-192025-07-15Asm Ip Holding B.V.Method for depositing a Group IV semiconductor and related semiconductor device structures
US10590535B2 (en)2017-07-262020-03-17Asm Ip Holdings B.V.Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US11802338B2 (en)2017-07-262023-10-31Asm Ip Holding B.V.Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US12276023B2 (en)2017-08-042025-04-15Asm Ip Holding B.V.Showerhead assembly for distributing a gas within a reaction chamber
US11587821B2 (en)2017-08-082023-02-21Asm Ip Holding B.V.Substrate lift mechanism and reactor including same
US10692741B2 (en)2017-08-082020-06-23Asm Ip Holdings B.V.Radiation shield
US11417545B2 (en)2017-08-082022-08-16Asm Ip Holding B.V.Radiation shield
US10770336B2 (en)2017-08-082020-09-08Asm Ip Holding B.V.Substrate lift mechanism and reactor including same
US11139191B2 (en)2017-08-092021-10-05Asm Ip Holding B.V.Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11769682B2 (en)2017-08-092023-09-26Asm Ip Holding B.V.Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10672636B2 (en)2017-08-092020-06-02Asm Ip Holding B.V.Cassette holder assembly for a substrate cassette and holding member for use in such assembly
USD900036S1 (en)2017-08-242020-10-27Asm Ip Holding B.V.Heater electrical connector and adapter
US11830730B2 (en)2017-08-292023-11-28Asm Ip Holding B.V.Layer forming method and apparatus
US11295980B2 (en)2017-08-302022-04-05Asm Ip Holding B.V.Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11056344B2 (en)2017-08-302021-07-06Asm Ip Holding B.V.Layer forming method
US11069510B2 (en)2017-08-302021-07-20Asm Ip Holding B.V.Substrate processing apparatus
US11581220B2 (en)2017-08-302023-02-14Asm Ip Holding B.V.Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11993843B2 (en)2017-08-312024-05-28Asm Ip Holding B.V.Substrate processing apparatus
US10928731B2 (en)2017-09-212021-02-23Asm Ip Holding B.V.Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same
US10844484B2 (en)2017-09-222020-11-24Asm Ip Holding B.V.Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11387120B2 (en)2017-09-282022-07-12Asm Ip Holding B.V.Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10658205B2 (en)2017-09-282020-05-19Asm Ip Holdings B.V.Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US11094546B2 (en)2017-10-052021-08-17Asm Ip Holding B.V.Method for selectively depositing a metallic film on a substrate
US12033861B2 (en)2017-10-052024-07-09Asm Ip Holding B.V.Method for selectively depositing a metallic film on a substrate
US10734223B2 (en)2017-10-102020-08-04Asm Ip Holding B.V.Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US12040184B2 (en)2017-10-302024-07-16Asm Ip Holding B.V.Methods for forming a semiconductor structure and related semiconductor structures
US10923344B2 (en)2017-10-302021-02-16Asm Ip Holding B.V.Methods for forming a semiconductor structure and related semiconductor structures
US10910262B2 (en)2017-11-162021-02-02Asm Ip Holding B.V.Method of selectively depositing a capping layer structure on a semiconductor device structure
US10734244B2 (en)2017-11-162020-08-04Asm Ip Holding B.V.Method of processing a substrate and a device manufactured by the same
US11022879B2 (en)2017-11-242021-06-01Asm Ip Holding B.V.Method of forming an enhanced unexposed photoresist layer
US11682572B2 (en)2017-11-272023-06-20Asm Ip Holdings B.V.Storage device for storing wafer cassettes for use with a batch furnace
US11127617B2 (en)2017-11-272021-09-21Asm Ip Holding B.V.Storage device for storing wafer cassettes for use with a batch furnace
US11639811B2 (en)2017-11-272023-05-02Asm Ip Holding B.V.Apparatus including a clean mini environment
US10872771B2 (en)2018-01-162020-12-22Asm Ip Holding B. V.Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
US11501973B2 (en)2018-01-162022-11-15Asm Ip Holding B.V.Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
US11972944B2 (en)2018-01-192024-04-30Asm Ip Holding B.V.Method for depositing a gap-fill layer by plasma-assisted deposition
US11393690B2 (en)2018-01-192022-07-19Asm Ip Holding B.V.Deposition method
US12119228B2 (en)2018-01-192024-10-15Asm Ip Holding B.V.Deposition method
US11482412B2 (en)2018-01-192022-10-25Asm Ip Holding B.V.Method for depositing a gap-fill layer by plasma-assisted deposition
USD903477S1 (en)2018-01-242020-12-01Asm Ip Holdings B.V.Metal clamp
US11018047B2 (en)2018-01-252021-05-25Asm Ip Holding B.V.Hybrid lift pin
USD913980S1 (en)2018-02-012021-03-23Asm Ip Holding B.V.Gas supply plate for semiconductor manufacturing apparatus
US11735414B2 (en)2018-02-062023-08-22Asm Ip Holding B.V.Method of post-deposition treatment for silicon oxide film
US11081345B2 (en)2018-02-062021-08-03Asm Ip Holding B.V.Method of post-deposition treatment for silicon oxide film
US11387106B2 (en)2018-02-142022-07-12Asm Ip Holding B.V.Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10896820B2 (en)2018-02-142021-01-19Asm Ip Holding B.V.Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US11685991B2 (en)2018-02-142023-06-27Asm Ip Holding B.V.Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en)2018-02-152020-08-04Asm Ip Holding B.V.Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US12173402B2 (en)2018-02-152024-12-24Asm Ip Holding B.V.Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US11482418B2 (en)2018-02-202022-10-25Asm Ip Holding B.V.Substrate processing method and apparatus
US10658181B2 (en)2018-02-202020-05-19Asm Ip Holding B.V.Method of spacer-defined direct patterning in semiconductor fabrication
US11939673B2 (en)2018-02-232024-03-26Asm Ip Holding B.V.Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US10975470B2 (en)2018-02-232021-04-13Asm Ip Holding B.V.Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en)2018-03-012022-10-18Asm Ip Holding B.V.Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en)2018-03-092023-04-18Asm Ip Holding B.V.Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en)2018-03-162021-09-07Asm Ip Holding B.V.Reactor, system including the reactor, and methods of manufacturing and using same
US12020938B2 (en)2018-03-272024-06-25Asm Ip Holding B.V.Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US10847371B2 (en)2018-03-272020-11-24Asm Ip Holding B.V.Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US11398382B2 (en)2018-03-272022-07-26Asm Ip Holding B.V.Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US11088002B2 (en)2018-03-292021-08-10Asm Ip Holding B.V.Substrate rack and a substrate processing system and method
US11230766B2 (en)2018-03-292022-01-25Asm Ip Holding B.V.Substrate processing apparatus and method
US10867786B2 (en)2018-03-302020-12-15Asm Ip Holding B.V.Substrate processing method
US12230531B2 (en)2018-04-092025-02-18Asm Ip Holding B.V.Substrate supporting apparatus, substrate processing apparatus including the same, and substrate processing method
US12025484B2 (en)2018-05-082024-07-02Asm Ip Holding B.V.Thin film forming method
US11469098B2 (en)2018-05-082022-10-11Asm Ip Holding B.V.Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
US12272527B2 (en)2018-05-092025-04-08Asm Ip Holding B.V.Apparatus for use with hydrogen radicals and method of using same
US11056567B2 (en)2018-05-112021-07-06Asm Ip Holding B.V.Method of forming a doped metal carbide film on a substrate and related semiconductor device structures
US11908733B2 (en)2018-05-282024-02-20Asm Ip Holding B.V.Substrate processing method and device manufactured by using the same
US11361990B2 (en)2018-05-282022-06-14Asm Ip Holding B.V.Substrate processing method and device manufactured by using the same
US11718913B2 (en)2018-06-042023-08-08Asm Ip Holding B.V.Gas distribution system and reactor system including same
US11837483B2 (en)2018-06-042023-12-05Asm Ip Holding B.V.Wafer handling chamber with moisture reduction
US11270899B2 (en)2018-06-042022-03-08Asm Ip Holding B.V.Wafer handling chamber with moisture reduction
US11286562B2 (en)2018-06-082022-03-29Asm Ip Holding B.V.Gas-phase chemical reactor and method of using same
US10797133B2 (en)2018-06-212020-10-06Asm Ip Holding B.V.Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
US11296189B2 (en)2018-06-212022-04-05Asm Ip Holding B.V.Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
US11530483B2 (en)2018-06-212022-12-20Asm Ip Holding B.V.Substrate processing system
US11492703B2 (en)2018-06-272022-11-08Asm Ip Holding B.V.Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11814715B2 (en)2018-06-272023-11-14Asm Ip Holding B.V.Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11499222B2 (en)2018-06-272022-11-15Asm Ip Holding B.V.Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11952658B2 (en)2018-06-272024-04-09Asm Ip Holding B.V.Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US10612136B2 (en)2018-06-292020-04-07ASM IP Holding, B.V.Temperature-controlled flange and reactor system including same
US10914004B2 (en)2018-06-292021-02-09Asm Ip Holding B.V.Thin-film deposition method and manufacturing method of semiconductor device
US11168395B2 (en)2018-06-292021-11-09Asm Ip Holding B.V.Temperature-controlled flange and reactor system including same
US11923190B2 (en)2018-07-032024-03-05Asm Ip Holding B.V.Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11646197B2 (en)2018-07-032023-05-09Asm Ip Holding B.V.Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en)2018-07-032020-08-25Asm Ip Holding B.V.Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755923B2 (en)2018-07-032020-08-25Asm Ip Holding B.V.Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en)2018-07-162020-09-08Asm Ip Holding B.V.Diaphragm valves, valve components, and methods for forming valve components
US11053591B2 (en)2018-08-062021-07-06Asm Ip Holding B.V.Multi-port gas injection system and reactor system including same
US10883175B2 (en)2018-08-092021-01-05Asm Ip Holding B.V.Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en)2018-08-162020-11-10Asm Ip Holding B.V.Gas distribution device for a wafer processing apparatus
US11430674B2 (en)2018-08-222022-08-30Asm Ip Holding B.V.Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11804388B2 (en)2018-09-112023-10-31Asm Ip Holding B.V.Substrate processing apparatus and method
US11024523B2 (en)2018-09-112021-06-01Asm Ip Holding B.V.Substrate processing apparatus and method
US11274369B2 (en)2018-09-112022-03-15Asm Ip Holding B.V.Thin film deposition method
US11049751B2 (en)2018-09-142021-06-29Asm Ip Holding B.V.Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
US11885023B2 (en)2018-10-012024-01-30Asm Ip Holding B.V.Substrate retaining apparatus, system including the apparatus, and method of using same
US11232963B2 (en)2018-10-032022-01-25Asm Ip Holding B.V.Substrate processing apparatus and method
US11414760B2 (en)2018-10-082022-08-16Asm Ip Holding B.V.Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same
US10847365B2 (en)2018-10-112020-11-24Asm Ip Holding B.V.Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en)2018-10-162020-10-20Asm Ip Holding B.V.Method for etching a carbon-containing feature
US11664199B2 (en)2018-10-192023-05-30Asm Ip Holding B.V.Substrate processing apparatus and substrate processing method
US11251068B2 (en)2018-10-192022-02-15Asm Ip Holding B.V.Substrate processing apparatus and substrate processing method
USD948463S1 (en)2018-10-242022-04-12Asm Ip Holding B.V.Susceptor for semiconductor substrate supporting apparatus
US12378665B2 (en)2018-10-262025-08-05Asm Ip Holding B.V.High temperature coatings for a preclean and etch apparatus and related methods
US11735445B2 (en)2018-10-312023-08-22Asm Ip Holding B.V.Substrate processing apparatus for processing substrates
US11087997B2 (en)2018-10-312021-08-10Asm Ip Holding B.V.Substrate processing apparatus for processing substrates
US11499226B2 (en)2018-11-022022-11-15Asm Ip Holding B.V.Substrate supporting unit and a substrate processing device including the same
US11866823B2 (en)2018-11-022024-01-09Asm Ip Holding B.V.Substrate supporting unit and a substrate processing device including the same
US11572620B2 (en)2018-11-062023-02-07Asm Ip Holding B.V.Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en)2018-11-072021-06-08Asm Ip Holding B.V.Methods for depositing a boron doped silicon germanium film
US11244825B2 (en)2018-11-162022-02-08Asm Ip Holding B.V.Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US11411088B2 (en)2018-11-162022-08-09Asm Ip Holding B.V.Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10818758B2 (en)2018-11-162020-10-27Asm Ip Holding B.V.Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US11798999B2 (en)2018-11-162023-10-24Asm Ip Holding B.V.Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10847366B2 (en)2018-11-162020-11-24Asm Ip Holding B.V.Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10559458B1 (en)2018-11-262020-02-11Asm Ip Holding B.V.Method of forming oxynitride film
US12040199B2 (en)2018-11-282024-07-16Asm Ip Holding B.V.Substrate processing apparatus for processing substrates
US11217444B2 (en)2018-11-302022-01-04Asm Ip Holding B.V.Method for forming an ultraviolet radiation responsive metal oxide-containing film
US11488819B2 (en)2018-12-042022-11-01Asm Ip Holding B.V.Method of cleaning substrate processing apparatus
US11769670B2 (en)2018-12-132023-09-26Asm Ip Holding B.V.Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
US11158513B2 (en)2018-12-132021-10-26Asm Ip Holding B.V.Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
US11658029B2 (en)2018-12-142023-05-23Asm Ip Holding B.V.Method of forming a device structure using selective deposition of gallium nitride and system for same
US11959171B2 (en)2019-01-172024-04-16Asm Ip Holding B.V.Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
US11390946B2 (en)2019-01-172022-07-19Asm Ip Holding B.V.Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
US11171025B2 (en)2019-01-222021-11-09Asm Ip Holding B.V.Substrate processing device
US11127589B2 (en)2019-02-012021-09-21Asm Ip Holding B.V.Method of topology-selective film formation of silicon oxide
US11615980B2 (en)2019-02-202023-03-28Asm Ip Holding B.V.Method and apparatus for filling a recess formed within a substrate surface
US11482533B2 (en)2019-02-202022-10-25Asm Ip Holding B.V.Apparatus and methods for plug fill deposition in 3-D NAND applications
US11227789B2 (en)2019-02-202022-01-18Asm Ip Holding B.V.Method and apparatus for filling a recess formed within a substrate surface
US11798834B2 (en)2019-02-202023-10-24Asm Ip Holding B.V.Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
US11251040B2 (en)2019-02-202022-02-15Asm Ip Holding B.V.Cyclical deposition method including treatment step and apparatus for same
US12176243B2 (en)2019-02-202024-12-24Asm Ip Holding B.V.Method and apparatus for filling a recess formed within a substrate surface
US11342216B2 (en)2019-02-202022-05-24Asm Ip Holding B.V.Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
US11629407B2 (en)2019-02-222023-04-18Asm Ip Holding B.V.Substrate processing apparatus and method for processing substrates
US12410522B2 (en)2019-02-222025-09-09Asm Ip Holding B.V.Substrate processing apparatus and method for processing substrates
US11114294B2 (en)2019-03-082021-09-07Asm Ip Holding B.V.Structure including SiOC layer and method of forming same
US11742198B2 (en)2019-03-082023-08-29Asm Ip Holding B.V.Structure including SiOCN layer and method of forming same
US11424119B2 (en)2019-03-082022-08-23Asm Ip Holding B.V.Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
US11901175B2 (en)2019-03-082024-02-13Asm Ip Holding B.V.Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
US11378337B2 (en)2019-03-282022-07-05Asm Ip Holding B.V.Door opener and substrate processing apparatus provided therewith
US11551925B2 (en)2019-04-012023-01-10Asm Ip Holding B.V.Method for manufacturing a semiconductor device
US11447864B2 (en)2019-04-192022-09-20Asm Ip Holding B.V.Layer forming method and apparatus
US11814747B2 (en)2019-04-242023-11-14Asm Ip Holding B.V.Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly
US11781221B2 (en)2019-05-072023-10-10Asm Ip Holding B.V.Chemical source vessel with dip tube
US11289326B2 (en)2019-05-072022-03-29Asm Ip Holding B.V.Method for reforming amorphous carbon polymer film
US11355338B2 (en)2019-05-102022-06-07Asm Ip Holding B.V.Method of depositing material onto a surface and structure formed according to the method
US11515188B2 (en)2019-05-162022-11-29Asm Ip Holding B.V.Wafer boat handling device, vertical batch furnace and method
US11996309B2 (en)2019-05-162024-05-28Asm Ip Holding B.V.Wafer boat handling device, vertical batch furnace and method
USD947913S1 (en)2019-05-172022-04-05Asm Ip Holding B.V.Susceptor shaft
USD975665S1 (en)2019-05-172023-01-17Asm Ip Holding B.V.Susceptor shaft
USD935572S1 (en)2019-05-242021-11-09Asm Ip Holding B.V.Gas channel plate
USD922229S1 (en)2019-06-052021-06-15Asm Ip Holding B.V.Device for controlling a temperature of a gas supply unit
US12195855B2 (en)2019-06-062025-01-14Asm Ip Holding B.V.Gas-phase reactor system including a gas detector
US11345999B2 (en)2019-06-062022-05-31Asm Ip Holding B.V.Method of using a gas-phase reactor system including analyzing exhausted gas
US12252785B2 (en)2019-06-102025-03-18Asm Ip Holding B.V.Method for cleaning quartz epitaxial chambers
US11476109B2 (en)2019-06-112022-10-18Asm Ip Holding B.V.Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
US11908684B2 (en)2019-06-112024-02-20Asm Ip Holding B.V.Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
USD944946S1 (en)2019-06-142022-03-01Asm Ip Holding B.V.Shower plate
USD931978S1 (en)2019-06-272021-09-28Asm Ip Holding B.V.Showerhead vacuum transport
US11746414B2 (en)2019-07-032023-09-05Asm Ip Holding B.V.Temperature control assembly for substrate processing apparatus and method of using same
US11390945B2 (en)2019-07-032022-07-19Asm Ip Holding B.V.Temperature control assembly for substrate processing apparatus and method of using same
US11605528B2 (en)2019-07-092023-03-14Asm Ip Holding B.V.Plasma device using coaxial waveguide, and substrate treatment method
US12107000B2 (en)2019-07-102024-10-01Asm Ip Holding B.V.Substrate support assembly and substrate processing device including the same
US11664267B2 (en)2019-07-102023-05-30Asm Ip Holding B.V.Substrate support assembly and substrate processing device including the same
US11996304B2 (en)2019-07-162024-05-28Asm Ip Holding B.V.Substrate processing device
US11664245B2 (en)2019-07-162023-05-30Asm Ip Holding B.V.Substrate processing device
US11688603B2 (en)2019-07-172023-06-27Asm Ip Holding B.V.Methods of forming silicon germanium structures
US11615970B2 (en)2019-07-172023-03-28Asm Ip Holding B.V.Radical assist ignition plasma system and method
US11643724B2 (en)2019-07-182023-05-09Asm Ip Holding B.V.Method of forming structures using a neutral beam
US12129548B2 (en)2019-07-182024-10-29Asm Ip Holding B.V.Method of forming structures using a neutral beam
US11282698B2 (en)2019-07-192022-03-22Asm Ip Holding B.V.Method of forming topology-controlled amorphous carbon polymer film
US12112940B2 (en)2019-07-192024-10-08Asm Ip Holding B.V.Method of forming topology-controlled amorphous carbon polymer film
US11557474B2 (en)2019-07-292023-01-17Asm Ip Holding B.V.Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
US12169361B2 (en)2019-07-302024-12-17Asm Ip Holding B.V.Substrate processing apparatus and method
US11443926B2 (en)2019-07-302022-09-13Asm Ip Holding B.V.Substrate processing apparatus
US11430640B2 (en)2019-07-302022-08-30Asm Ip Holding B.V.Substrate processing apparatus
US11587814B2 (en)2019-07-312023-02-21Asm Ip Holding B.V.Vertical batch furnace assembly
US11876008B2 (en)2019-07-312024-01-16Asm Ip Holding B.V.Vertical batch furnace assembly
US11227782B2 (en)2019-07-312022-01-18Asm Ip Holding B.V.Vertical batch furnace assembly
US11587815B2 (en)2019-07-312023-02-21Asm Ip Holding B.V.Vertical batch furnace assembly
US11680839B2 (en)2019-08-052023-06-20Asm Ip Holding B.V.Liquid level sensor for a chemical source vessel
US12247286B2 (en)2019-08-092025-03-11Asm Ip Holding B.V.Heater assembly including cooling apparatus and method of using same
USD965524S1 (en)2019-08-192022-10-04Asm Ip Holding B.V.Susceptor support
USD965044S1 (en)2019-08-192022-09-27Asm Ip Holding B.V.Susceptor shaft
US11639548B2 (en)2019-08-212023-05-02Asm Ip Holding B.V.Film-forming material mixed-gas forming device and film forming device
US11594450B2 (en)2019-08-222023-02-28Asm Ip Holding B.V.Method for forming a structure with a hole
USD949319S1 (en)2019-08-222022-04-19Asm Ip Holding B.V.Exhaust duct
US12040229B2 (en)2019-08-222024-07-16Asm Ip Holding B.V.Method for forming a structure with a hole
USD940837S1 (en)2019-08-222022-01-11Asm Ip Holding B.V.Electrode
USD930782S1 (en)2019-08-222021-09-14Asm Ip Holding B.V.Gas distributor
USD979506S1 (en)2019-08-222023-02-28Asm Ip Holding B.V.Insulator
US11827978B2 (en)2019-08-232023-11-28Asm Ip Holding B.V.Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US11527400B2 (en)2019-08-232022-12-13Asm Ip Holding B.V.Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
US11898242B2 (en)2019-08-232024-02-13Asm Ip Holding B.V.Methods for forming a polycrystalline molybdenum film over a surface of a substrate and related structures including a polycrystalline molybdenum film
US12033849B2 (en)2019-08-232024-07-09Asm Ip Holding B.V.Method for depositing silicon oxide film having improved quality by PEALD using bis(diethylamino)silane
US11286558B2 (en)2019-08-232022-03-29Asm Ip Holding B.V.Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US11495459B2 (en)2019-09-042022-11-08Asm Ip Holding B.V.Methods for selective deposition using a sacrificial capping layer
US11823876B2 (en)2019-09-052023-11-21Asm Ip Holding B.V.Substrate processing apparatus
US11562901B2 (en)2019-09-252023-01-24Asm Ip Holding B.V.Substrate processing method
US11610774B2 (en)2019-10-022023-03-21Asm Ip Holding B.V.Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process
US12230497B2 (en)2019-10-022025-02-18Asm Ip Holding B.V.Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process
US11339476B2 (en)2019-10-082022-05-24Asm Ip Holding B.V.Substrate processing device having connection plates, substrate processing method
US12428726B2 (en)2019-10-082025-09-30Asm Ip Holding B.V.Gas injection system and reactor system including same
US12006572B2 (en)2019-10-082024-06-11Asm Ip Holding B.V.Reactor system including a gas distribution assembly for use with activated species and method of using same
US11735422B2 (en)2019-10-102023-08-22Asm Ip Holding B.V.Method of forming a photoresist underlayer and structure including same
US12009241B2 (en)2019-10-142024-06-11Asm Ip Holding B.V.Vertical batch furnace assembly with detector to detect cassette
US11637011B2 (en)2019-10-162023-04-25Asm Ip Holding B.V.Method of topology-selective film formation of silicon oxide
US11637014B2 (en)2019-10-172023-04-25Asm Ip Holding B.V.Methods for selective deposition of doped semiconductor material
US11315794B2 (en)2019-10-212022-04-26Asm Ip Holding B.V.Apparatus and methods for selectively etching films
US11996292B2 (en)2019-10-252024-05-28Asm Ip Holding B.V.Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11646205B2 (en)2019-10-292023-05-09Asm Ip Holding B.V.Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
US11594600B2 (en)2019-11-052023-02-28Asm Ip Holding B.V.Structures with doped semiconductor layers and methods and systems for forming same
US12266695B2 (en)2019-11-052025-04-01Asm Ip Holding B.V.Structures with doped semiconductor layers and methods and systems for forming same
US11501968B2 (en)2019-11-152022-11-15Asm Ip Holding B.V.Method for providing a semiconductor device with silicon filled gaps
US11626316B2 (en)2019-11-202023-04-11Asm Ip Holding B.V.Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
US11915929B2 (en)2019-11-262024-02-27Asm Ip Holding B.V.Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
US11401605B2 (en)2019-11-262022-08-02Asm Ip Holding B.V.Substrate processing apparatus
US11923181B2 (en)2019-11-292024-03-05Asm Ip Holding B.V.Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing
US11646184B2 (en)2019-11-292023-05-09Asm Ip Holding B.V.Substrate processing apparatus
US11929251B2 (en)2019-12-022024-03-12Asm Ip Holding B.V.Substrate processing apparatus having electrostatic chuck and substrate processing method
US11840761B2 (en)2019-12-042023-12-12Asm Ip Holding B.V.Substrate processing apparatus
US11885013B2 (en)2019-12-172024-01-30Asm Ip Holding B.V.Method of forming vanadium nitride layer and structure including the vanadium nitride layer
US11527403B2 (en)2019-12-192022-12-13Asm Ip Holding B.V.Methods for filling a gap feature on a substrate surface and related semiconductor structures
US12119220B2 (en)2019-12-192024-10-15Asm Ip Holding B.V.Methods for filling a gap feature on a substrate surface and related semiconductor structures
US12033885B2 (en)2020-01-062024-07-09Asm Ip Holding B.V.Channeled lift pin
US11976359B2 (en)2020-01-062024-05-07Asm Ip Holding B.V.Gas supply assembly, components thereof, and reactor system including same
US11993847B2 (en)2020-01-082024-05-28Asm Ip Holding B.V.Injector
US12125700B2 (en)2020-01-162024-10-22Asm Ip Holding B.V.Method of forming high aspect ratio features
US11551912B2 (en)2020-01-202023-01-10Asm Ip Holding B.V.Method of forming thin film and method of modifying surface of thin film
US12410515B2 (en)2020-01-292025-09-09Asm Ip Holding B.V.Contaminant trap system for a reactor system
US11521851B2 (en)2020-02-032022-12-06Asm Ip Holding B.V.Method of forming structures including a vanadium or indium layer
US11828707B2 (en)2020-02-042023-11-28Asm Ip Holding B.V.Method and apparatus for transmittance measurements of large articles
US11776846B2 (en)2020-02-072023-10-03Asm Ip Holding B.V.Methods for depositing gap filling fluids and related systems and devices
US12431334B2 (en)2020-02-132025-09-30Asm Ip Holding B.V.Gas distribution assembly
US12218269B2 (en)2020-02-132025-02-04Asm Ip Holding B.V.Substrate processing apparatus including light receiving device and calibration method of light receiving device
US11781243B2 (en)2020-02-172023-10-10Asm Ip Holding B.V.Method for depositing low temperature phosphorous-doped silicon
US11986868B2 (en)2020-02-282024-05-21Asm Ip Holding B.V.System dedicated for parts cleaning
US12278129B2 (en)2020-03-042025-04-15Asm Ip Holding B.V.Alignment fixture for a reactor system
US11837494B2 (en)2020-03-112023-12-05Asm Ip Holding B.V.Substrate handling device with adjustable joints
US11488854B2 (en)2020-03-112022-11-01Asm Ip Holding B.V.Substrate handling device with adjustable joints
US11876356B2 (en)2020-03-112024-01-16Asm Ip Holding B.V.Lockout tagout assembly and system and method of using same
US11961741B2 (en)2020-03-122024-04-16Asm Ip Holding B.V.Method for fabricating layer structure having target topological profile
US12173404B2 (en)2020-03-172024-12-24Asm Ip Holding B.V.Method of depositing epitaxial material, structure formed using the method, and system for performing the method
US11823866B2 (en)2020-04-022023-11-21Asm Ip Holding B.V.Thin film forming method
US11830738B2 (en)2020-04-032023-11-28Asm Ip Holding B.V.Method for forming barrier layer and method for manufacturing semiconductor device
US11437241B2 (en)2020-04-082022-09-06Asm Ip Holding B.V.Apparatus and methods for selectively etching silicon oxide films
US11821078B2 (en)2020-04-152023-11-21Asm Ip Holding B.V.Method for forming precoat film and method for forming silicon-containing film
US12087586B2 (en)2020-04-152024-09-10Asm Ip Holding B.V.Method of forming chromium nitride layer and structure including the chromium nitride layer
US11996289B2 (en)2020-04-162024-05-28Asm Ip Holding B.V.Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
US12243742B2 (en)2020-04-212025-03-04Asm Ip Holding B.V.Method for processing a substrate
US11530876B2 (en)2020-04-242022-12-20Asm Ip Holding B.V.Vertical batch furnace assembly comprising a cooling gas supply
US12130084B2 (en)2020-04-242024-10-29Asm Ip Holding B.V.Vertical batch furnace assembly comprising a cooling gas supply
US12221357B2 (en)2020-04-242025-02-11Asm Ip Holding B.V.Methods and apparatus for stabilizing vanadium compounds
US11898243B2 (en)2020-04-242024-02-13Asm Ip Holding B.V.Method of forming vanadium nitride-containing layer
US11887857B2 (en)2020-04-242024-01-30Asm Ip Holding B.V.Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
US12243747B2 (en)2020-04-242025-03-04Asm Ip Holding B.V.Methods of forming structures including vanadium boride and vanadium phosphide layers
US11959168B2 (en)2020-04-292024-04-16Asm Ip Holding B.V.Solid source precursor vessel
US11798830B2 (en)2020-05-012023-10-24Asm Ip Holding B.V.Fast FOUP swapping with a FOUP handler
US11515187B2 (en)2020-05-012022-11-29Asm Ip Holding B.V.Fast FOUP swapping with a FOUP handler
US11626308B2 (en)2020-05-132023-04-11Asm Ip Holding B.V.Laser alignment fixture for a reactor system
US12057314B2 (en)2020-05-152024-08-06Asm Ip Holding B.V.Methods for silicon germanium uniformity control using multiple precursors
US11804364B2 (en)2020-05-192023-10-31Asm Ip Holding B.V.Substrate processing apparatus
US11705333B2 (en)2020-05-212023-07-18Asm Ip Holding B.V.Structures including multiple carbon layers and methods of forming and using same
US12243757B2 (en)2020-05-212025-03-04Asm Ip Holding B.V.Flange and apparatus for processing substrates
US11987881B2 (en)2020-05-222024-05-21Asm Ip Holding B.V.Apparatus for depositing thin films using hydrogen peroxide
US12406846B2 (en)2020-05-262025-09-02Asm Ip Holding B.V.Method for depositing boron and gallium containing silicon germanium layers
US11767589B2 (en)2020-05-292023-09-26Asm Ip Holding B.V.Substrate processing device
US12106944B2 (en)2020-06-022024-10-01Asm Ip Holding B.V.Rotating substrate support
US12266524B2 (en)2020-06-162025-04-01Asm Ip Holding B.V.Method for depositing boron containing silicon germanium layers
US11646204B2 (en)2020-06-242023-05-09Asm Ip Holding B.V.Method for forming a layer provided with silicon
US11658035B2 (en)2020-06-302023-05-23Asm Ip Holding B.V.Substrate processing method
US12431354B2 (en)2020-07-012025-09-30Asm Ip Holding B.V.Silicon nitride and silicon oxide deposition methods using fluorine inhibitor
US12020934B2 (en)2020-07-082024-06-25Asm Ip Holding B.V.Substrate processing method
US12055863B2 (en)2020-07-172024-08-06Asm Ip Holding B.V.Structures and methods for use in photolithography
US11644758B2 (en)2020-07-172023-05-09Asm Ip Holding B.V.Structures and methods for use in photolithography
US12241158B2 (en)2020-07-202025-03-04Asm Ip Holding B.V.Method for forming structures including transition metal layers
US11674220B2 (en)2020-07-202023-06-13Asm Ip Holding B.V.Method for depositing molybdenum layers using an underlayer
US12322591B2 (en)2020-07-272025-06-03Asm Ip Holding B.V.Thin film deposition process
US12154824B2 (en)2020-08-142024-11-26Asm Ip Holding B.V.Substrate processing method
US12040177B2 (en)2020-08-182024-07-16Asm Ip Holding B.V.Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
US12217954B2 (en)2020-08-252025-02-04Asm Ip Holding B.V.Method of cleaning a surface
US11725280B2 (en)2020-08-262023-08-15Asm Ip Holding B.V.Method for forming metal silicon oxide and metal silicon oxynitride layers
US12074022B2 (en)2020-08-272024-08-27Asm Ip Holding B.V.Method and system for forming patterned structures using multiple patterning process
US12211742B2 (en)2020-09-102025-01-28Asm Ip Holding B.V.Methods for depositing gap filling fluid
USD990534S1 (en)2020-09-112023-06-27Asm Ip Holding B.V.Weighted lift pin
US12148609B2 (en)2020-09-162024-11-19Asm Ip Holding B.V.Silicon oxide deposition method
USD1012873S1 (en)2020-09-242024-01-30Asm Ip Holding B.V.Electrode for semiconductor processing apparatus
US12218000B2 (en)2020-09-252025-02-04Asm Ip Holding B.V.Semiconductor processing method
US12009224B2 (en)2020-09-292024-06-11Asm Ip Holding B.V.Apparatus and method for etching metal nitrides
US12107005B2 (en)2020-10-062024-10-01Asm Ip Holding B.V.Deposition method and an apparatus for depositing a silicon-containing material
US12051567B2 (en)2020-10-072024-07-30Asm Ip Holding B.V.Gas supply unit and substrate processing apparatus including gas supply unit
US11827981B2 (en)2020-10-142023-11-28Asm Ip Holding B.V.Method of depositing material on stepped structure
US11940785B2 (en)2020-10-152024-03-26Asm Ip Holding B.V.Method for predicting maintenance for components used in substrate treatments, and predictive maintenance device
US12217946B2 (en)2020-10-152025-02-04Asm Ip Holding B.V.Method of manufacturing semiconductor device, and substrate treatment apparatus using ether-CAT
US11873557B2 (en)2020-10-222024-01-16Asm Ip Holding B.V.Method of depositing vanadium metal
US11901179B2 (en)2020-10-282024-02-13Asm Ip Holding B.V.Method and device for depositing silicon onto substrates
US12209308B2 (en)2020-11-122025-01-28Asm Ip Holding B.V.Reactor and related methods
US12195852B2 (en)2020-11-232025-01-14Asm Ip Holding B.V.Substrate processing apparatus with an injector
US12027365B2 (en)2020-11-242024-07-02Asm Ip Holding B.V.Methods for filling a gap and related systems and devices
US11891696B2 (en)2020-11-302024-02-06Asm Ip Holding B.V.Injector configured for arrangement within a reaction chamber of a substrate processing apparatus
US12255053B2 (en)2020-12-102025-03-18Asm Ip Holding B.V.Methods and systems for depositing a layer
US12159788B2 (en)2020-12-142024-12-03Asm Ip Holding B.V.Method of forming structures for threshold voltage control
US11946137B2 (en)2020-12-162024-04-02Asm Ip Holding B.V.Runout and wobble measurement fixtures
US12288710B2 (en)2020-12-182025-04-29Asm Ip Holding B.V.Wafer processing apparatus with a rotatable table
US12129545B2 (en)2020-12-222024-10-29Asm Ip Holding B.V.Precursor capsule, a vessel and a method
US12131885B2 (en)2020-12-222024-10-29Asm Ip Holding B.V.Plasma treatment device having matching box
US11885020B2 (en)2020-12-222024-01-30Asm Ip Holding B.V.Transition metal deposition method
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