CN217768357U - Transmission model silicon carbide intelligent power module - Google Patents

Abstract

The embodiment of the application belongs to the field of semiconductors and relates to a transmission model silicon carbide intelligent power module. Including heat dissipation base plate, signal base plate, lead frame, carborundum module and be used for the drive the HVIC encapsulation of carborundum module is finished, lead frame includes signal side lead frame and power side lead frame, the signal base plate sets up on the signal side lead frame, HVIC encapsulation sets up on the signal base plate, the heat dissipation base plate sets up one side of signal base plate, power side lead frame sets up on the heat dissipation base plate, the carborundum module sets up on the heat dissipation base plate or on the power side lead frame. The technical scheme provided by the application can improve reliability and use convenience.

Description

Transmission model silicon carbide intelligent power module

Technical Field

The application relates to the technical field of semiconductors, and more particularly relates to a transfer model silicon carbide intelligent power module.

Background

An Intelligent Power Module (IPM) is a Power semiconductor system product combining Power electronics and integrated circuit technology. The intelligent power module integrates a power switch device and a high-voltage driving circuit together and is internally provided with fault detection circuits such as under voltage, over current, overheating and the like. The voltage is generally 600V and the current is generally 1A-50A. The integrated power devices are silicon IGBT, silicon MOSFET and the like. The intelligent power module receives control signals of the MCU and the ASIC, amplifies voltage and current, isolates high voltage and low voltage, drives a subsequent circuit to work, and performs abnormity detection and self protection on the other hand, and sends an abnormal state detection signal back to the MCU. Compared with the traditional discrete scheme, the intelligent power module wins the increasingly large market with the advantages of high integration level, high reliability and the like, is particularly suitable for a frequency converter and various inverter systems of a driving motor, and is an ideal power electronic device for industrial mechanical motor driving, servo motor driving, variable-frequency household appliances, electric automobiles and new energy.

The HVIC inside the current IPM adopts PN junction and HVJT isolation, and the isolation voltage can not reach 1200V, so that the IPM has no 1200V IPM and no 1200V silicon carbide IPM, and the IPM reliability is poorer. Silicon carbide MOS and SBD are mainly packaged by single tubes at present, a driving circuit of the silicon carbide MOS and SBD is mainly a board-level circuit or a single tube packaged HVIC, and a PCB board is needed for realizing circuit topology of power systems such as half-bridge, full-bridge, three-phase full-bridge, 3-level and chopping, so that the system is large in area, difficult to assemble and difficult to design for heat dissipation. The use is inconvenient, so that the use convenience of the IPM is poor.

SUMMERY OF THE UTILITY MODEL

The technical problem that this application embodiment will be solved is how to improve the reliability and the use convenience of transmission model carborundum intelligence power module.

In order to solve the above technical problem, an embodiment of the present application provides a transfer model silicon carbide intelligent power module, including: the heat dissipation substrate, the signal substrate, the lead frame, the carborundum module and be used for the drive the HVIC encapsulation of carborundum module, the lead frame includes signal side lead frame and power side lead frame, the signal substrate sets up on the signal side lead frame, the HVIC encapsulation sets up on the signal substrate, the heat dissipation substrate sets up one side of signal substrate, the power side lead frame sets up on the heat dissipation substrate, the carborundum module sets up on the heat dissipation substrate or on the power side lead frame.

Further, the heat dissipation substrate includes one of an IMS substrate, a DBC substrate, and a hi set substrate.

Furthermore, when the heat dissipation substrate is a DBC substrate, the power side lead frame is disposed on an edge of one side of the DBC substrate away from the signal substrate, and the silicon carbide module is disposed on one side of the DBC substrate close to the signal substrate.

Furthermore, when the heat dissipation substrate is a hi set substrate, the power side lead frame covers the hi set substrate, and the silicon carbide module is disposed on the power side lead frame on the hi set substrate.

Furthermore, the silicon carbide module is one of a one-way silicon carbide module, a half-bridge silicon carbide module, an H-bridge silicon carbide module and a full-bridge silicon carbide module.

Furthermore, the signal substrate is a PCB.

Furthermore, the heat dissipation substrate comprises a plastic package material which is injected through an epoxy resin injection molding process and is used for wrapping the heat dissipation substrate or the part of the heat dissipation substrate, the signal substrate, the part of the lead frame, the HVIC package and the silicon carbide module.

The utility model also provides a transmission model carborundum intelligent power module, include: heat dissipation base plate, pin frame, carborundum module and be used for the drive the HVIC encapsulation of carborundum module, pin frame includes signal side pin frame and power side pin frame, signal side pin frame sets up on the edge of heat dissipation base plate one side, HVIC encapsulation and the carborundum module sets up side by side on the heat dissipation base plate, power side pin frame sets up heat dissipation base plate is kept away from on the edge of signal side pin frame one side.

Further, the heat dissipation substrate includes one of an IMS substrate, a DBC substrate, and a Hiset substrate.

Compared with the prior art, the embodiment of the application mainly has the following beneficial effects: the silicon carbide intelligent power module of the transmission model mainly comprises a heat dissipation substrate (an IMS substrate, a DBC substrate and a Hiset substrate), a signal substrate, a silicon carbide module, an HVIC package, a lead frame and the like. Welding a silicon carbide module on a heat dissipation substrate or a power side lead frame through soft soldering, welding an HVIC package on a signal substrate, and connecting a SiC MOSFET (metal oxide semiconductor field effect transistor) and an SBD (lateral diffusion barrier) bonding area with an IMS (IP multimedia subsystem) substrate bonding area and a lead bonding area by adopting bonding wires; and injecting a plastic package material into the epoxy resin injection molding process to wrap all the chips and the bonding wires, and curing the epoxy resin. The SiC IPM module with 600V, 1200V and even higher voltage can be realized, the traditional SiC power system is miniaturized and integrated, and the reliability and the use convenience are improved.

Drawings

In order to illustrate the solution of the present application more clearly, the drawings that are needed in the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present application, and that other drawings can be obtained by those skilled in the art without inventive effort.

FIG. 1 is an architectural diagram of one embodiment of a transfer model silicon carbide smart power module employing a DBC substrate according to the present application;

FIG. 2 is a schematic plan view of the transfer model silicon carbide smart power module of FIG. 1;

fig. 3 is an architecture diagram of another embodiment of a transfer model silicon carbide smart power module employing a Hiset substrate according to the present application;

FIG. 4 is a schematic plan view of the transfer model silicon carbide smart power module of FIG. 3;

FIG. 5 is an architecture diagram of one embodiment of a transfer model silicon carbide smart power module employing an IMS substrate according to the present application;

fig. 6 is a schematic plan view of the transfer model silicon carbide smart power module of fig. 5.

Detailed Description

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs; the terminology used in the description of the application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application; the terms "including" and "having," and any variations thereof, in the description and claims of this application and the description of the above figures are intended to cover non-exclusive inclusions. The terms "first," "second," and the like in the description and claims of this application or in the above-described drawings are used for distinguishing between different objects and not for describing a particular order.

Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein can be combined with other embodiments.

In order to make the technical solutions better understood by those skilled in the art, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings.

As shown in fig. 1-2, the transfer model silicon carbide smart power module of the present application includes:radiating substrate 1,signal substrate 2, lead frame, carborundum module and be used for the drive theHVIC encapsulation article 3 of carborundum module, lead frame includes signalside lead frame 4 and powerside lead frame 5,signal substrate 2 bonds and sets up on the signalside lead frame 4,HVIC encapsulation article 3 sets up on thesignal substrate 2, radiatingsubstrate 1 sets up one side ofsignal substrate 2, powerside lead frame 5 sets up on theradiating substrate 1, the carborundum module sets up on theradiating substrate 1 or on the powerside lead frame 5.

Theheat dissipation substrate 1 is one of an IMS substrate, a DBC substrate, and a Hiset substrate. Thesignal substrate 2 is a PCB.

Specifically, the IMS substrate has the advantages of low cost, high design flexibility, high packaging difficulty, high integration level, high parasitic capacitance, general heat dissipation, 5000V insulating and voltage withstanding, more insulating layer defects, good corrosion resistance, good mechanical strength and good thermal matching.

The DBC substrate is moderate in cost, moderate in design flexibility, low in packaging difficulty, moderate in integration level, small in parasitic capacitance, good in heat dissipation, resistant to voltage of more than 10000V, few in insulating layer defects, general in corrosion resistance, poor in mechanical strength and impact resistance of ceramic, and thermal matching depends on ceramic materials.

The Hiset substrate has the advantages of high transportation cost, low design flexibility, moderate packaging difficulty, low integration level, small parasitic capacitance, general heat dissipation, 5000V insulation and voltage resistance, more insulation layer defects, general corrosion resistance, good mechanical strength and poor heat matching.

The three kinds of heat dissipation substrates have respective differences, advantages and disadvantages, and can be selected according to specific use scenes and demand emphasis points of the transmission model silicon carbide intelligent power module.

When theheat dissipation substrate 1 is a DBC substrate, the powerside lead frame 5 is disposed on the edge of the DBC substrate on the side away from thesignal substrate 2, and the silicon carbide module is disposed on the side of the DBC substrate close to thesignal substrate 2.

When theheat dissipation substrate 1 is a hi set substrate, the powerside lead frame 5 covers the hi set substrate, and the silicon carbide module is disposed on the powerside lead frame 5 on the hi set substrate.

In the embodiment of the present application, the silicon carbide module includes one or more integrated silicon carbide MOS transistors 7 (SiC MOSFET chip) and silicon carbide schottky diodes 6 (SiC SBD chip). The carborundum module can be any one in single-circuit carborundum module, half-bridge carborundum module, H bridge carborundum module, full-bridge carborundum module. In this embodiment, the drawings mainly take a full-bridge transfer model silicon carbide intelligent power module as an example for illustration. Of course, the single-path, half-bridge (double-path) and H-bridge (4-path) transmission model silicon carbide intelligent power modules are also designed similarly. And then obtain different transmission model carborundum intelligent power modules, satisfy different demands. The transmission model silicon carbide intelligent power module of single-path, half-bridge (double-path) and H-bridge (4-path) does not show corresponding attached drawings.

Theheat dissipating board 1, thesignal board 2, the lead frame, the silicon carbide module, and the HVICpackage 3 may be connected to each other by bonding wires or soldering.

The embodiment of the utility model provides an in, this transmission model carborundum intelligent power module still includes plastic-envelope material 8, pours into through epoxy injection molding process plastic-envelope material 8, is used for the parcel radiatingbasal plate 1 or radiatingbasal plate 1's part signalbasal plate 2 lead frame's part HVIC packagedgoods 3 and the carborundum module. Theplastic package material 8 plays a role in protection.

Specifically, as shown in fig. 1, fig. 1 is a structural diagram of an embodiment of a transfer model silicon carbide smart power module using a DBC substrate according to the present application. Thesignal substrate 2 is a PCB, and theHVIC package 3 is mounted on the PCB. The PCB plays the roles of voltage isolation and logic circuit connection. The signalside lead frame 4 is connected to the PCB board and performs signal transmission with an external circuit. Theheat dissipation substrate 1 is a DBC substrate to which a silicon carbide module (integrated silicon carbide MOS transistor 7 (SiC MOSFET chip) and silicon carbide super diode 6 (SiC SBD chip)) is assembled. The DBC substrate plays roles in heat dissipation, voltage isolation and power circuit connection. The powerside lead frame 5 is bonded to the DBC substrate, connected to thesic schottky diode 6 in the sic module, and performs power transmission with an external circuit.

More specifically, as shown in fig. 2, fig. 2 is a schematic plan view of the transfer model silicon carbide smart power module of fig. 1. Theheat dissipation substrate 1 is a DBC substrate, thesignal substrate 2 is a PCB, andHVIC packages 3, signal lines and the like are arranged on the PCB and are externally connected through a signalside lead frame 4. And a SiC MOSFET chip, a SiC SBD chip and a power circuit are arranged on the DBC substrate and are externally connected through a powerside lead frame 5.

Soldering a silicon carbide module (integrated silicon carbide MOS tube 7 (SiC MOSFET chip) and a silicon carbide super-base diode 6 (SiC SBD chip)) on a DBC substrate by soldering, soldering anHVIC package 3 and a passive component on a PCB substrate by soldering, and soldering a lead frame on the DBC substrate; assembling the PCB substrate on the lead frame, and connecting the SiC MOSFET, the SBD bonding region, the DBC substrate bonding region, the lead frame bonding region and the PCB substrate bonding region by adopting bonding wires; theheat dissipation substrate 1 or the part (exposed heat dissipation surface) of theheat dissipation substrate 1, the part (with pins reserved) of the lead frame, all chips and the bonding wires are wrapped by injecting theplastic package material 8 through an epoxy resin injection molding process, and the pins are subjected to post-curing and rib cutting and forming.

Fig. 3 is a schematic diagram of another embodiment of a transfer model silicon carbide smart power module using a Hiset substrate according to the present invention, as shown in fig. 3. Theheat dissipation substrate 1 is a hi set substrate, and a silicon carbide module (integrated silicon carbide MOS transistor 7 (SiC MOSFET chip) and silicon carbide super diode 6 (SiC SBD chip)) is assembled to the power-side lead frame 5. The powerside lead frame 5 is back-bonded with a hi set substrate. The signalside lead frame 4 is not bonded with a Hiset substrate, and the Hiset substrate plays roles in heat dissipation and voltage isolation. The powerside lead frame 5 serves as a power circuit connection. The PCB board is assembled on the signalside lead frame 4. TheHVIC package 3 is assembled on a PCB board. The signalside lead frame 4 and the PCB board function as voltage isolation and logic circuit connection. The powerside lead frame 5 communicates power with external circuitry. The signalside lead frame 4 mainly performs signal transmission with an external circuit.

As shown in fig. 4, fig. 4 is a schematic plan view of the transfer model silicon carbide smart power module of fig. 3. Theheat dissipation substrate 1 is a Hiset substrate, and thesignal substrate 2 is a PCB. A silicon carbide module (integrated silicon carbide MOS transistor 7 (SiC MOSFET chip) and silicon carbide schottky diode 6 (SiC SBD chip)) and a power line are arranged on the powerside lead frame 5, and are connected to the outside through the powerside lead frame 5. The PCB board is provided with anHVIC package 3 and signal lines, and is externally connected through a signalside lead frame 4.

Soldering a silicon carbide module (integrated silicon carbide MOS tube 7 (SiC MOSFET chip) and silicon carbide super-base diode 6 (SiC SBD chip)) on the lead frame by soldering, and soldering theHVIC package 3 and the passive component on the PCB substrate by soldering; assembling the PCB substrate to the lead frame; connecting the SiC MOSFET, the SBD bonding region, the lead frame bonding region and the PCB substrate bonding region by using a bonding wire; the Hiset substrate is pasted on a lead frame, theheat dissipation substrate 1 or part (exposing a heat dissipation surface) of theheat dissipation substrate 1, part (reserving pins) of the lead frame, all chips and bonding wires are wrapped through an epoxy resin injection molding process, epoxy resin is cured, and the pins are cut into ribs and formed.

The embodiment of the present invention provides a silicon carbide intelligent power module with a transmission model, which is mainly composed of a heat dissipation substrate 1 (IMS substrate, DBC substrate, hi set substrate), asignal substrate 2, a silicon carbide module, anHVIC package 3, a lead frame, etc. Welding a silicon carbide module on the radiatingsubstrate 1 or the powerside lead frame 5 through soft soldering, welding anHVIC package 3 on thesignal substrate 2, and connecting SiC MOSFET and SBD bonding areas with IMS substrate bonding areas and lead bonding areas through bonding wires; and injecting aplastic package material 8 into the epoxy resin injection molding process to wrap all the chips and the bonding wires, and curing the epoxy resin. The SiC IPM module with 600V, 1200V and even higher voltage can be realized, the traditional SiC power system is miniaturized and integrated, and the reliability and the use convenience are improved.

In an embodiment of the present invention, as shown in fig. 5, fig. 5 is an architecture diagram of an embodiment of a transfer model silicon carbide intelligent power module using an IMS substrate according to the present application. This transmission model carborundum intelligent power module includes: heatdissipation base plate 1, lead frame, carborundum module and be used for the drive the HVIC encapsulation ofcarborundum module 3, lead frame includes signalside lead frame 4 and powerside lead frame 5, signalside lead frame 4 sets up on the edge of heatdissipation base plate 1 one side,HVIC encapsulation 3 and the carborundum module sets up side by side on the heatdissipation base plate 1, powerside lead frame 5 sets up heatdissipation base plate 1 keeps away from on the edge of signalside lead frame 4 one side.

As shown in fig. 6, fig. 6 is a schematic plan view of the transfer model silicon carbide smart power module of fig. 5. Theheat dissipation substrate 1 is an IMS substrate, and the silicon carbide module (integrated silicon carbide MOS transistor 7 (SiC MOSFET chip) and silicon carbide schottky diode 6 (SiC SBD chip)), the power line, theHVIC package 3, and the signal line are all provided on the IMS substrate. And are externally connected through the powerside lead frame 5 and the signalside lead frame 4. The PCB board is provided with anHVIC package 3 and a signal line, and is externally connected through a signalside lead frame 4.

Specifically, the silicon carbide module (integrated silicon carbide MOS transistor 7 (SiC MOSFET chip) and silicon carbide super diode 6 (SiC SBD chip)) and theHVIC package 3 are soldered to the IMS substrate by soldering, and the lead frame is soldered to the IMS substrate by soldering; connecting the SiC MOSFET and SBD bonding regions with the IMS substrate bonding region by using bonding wires; theheat dissipation substrate 1 or the part (exposed heat dissipation surface) of theheat dissipation substrate 1, the part (with pins reserved) of the lead frame, all chips and the bonding wires are wrapped by injecting theplastic package material 8 through an epoxy resin injection molding process, and the pins are subjected to post-curing and rib cutting and forming.

In the embodiment of the present application, the transfer model silicon carbide intelligent power module mainly includes a heat dissipation substrate 1 (IMS substrate, DBC substrate, hi set substrate), a silicon carbide module, anHVIC package 3, a lead frame, and the like. Welding the silicon carbide module and theHVIC package 3 on the radiatingsubstrate 1 by soft soldering, and connecting the SiC MOSFET and SBD bonding region with the IMS substrate bonding region and the lead bonding region by bonding wires; and injecting aplastic package material 8 into the epoxy resin injection molding process to wrap all the chips and the bonding wires, and curing the epoxy resin. The SiC IPM module with 600V, 1200V and even higher voltage can be realized, the traditional SiC power system is miniaturized and integrated, and the reliability and the use convenience are improved.

It is to be understood that the above-described embodiments are merely illustrative of some, but not restrictive, of the broad invention, and that the appended drawings illustrate preferred embodiments of the invention and do not limit the scope of the invention. This application is capable of embodiments in many different forms and is provided for the purpose of enabling a thorough understanding of the disclosure of the application. Although the present application has been described in detail with reference to the foregoing embodiments, it will be apparent to one skilled in the art that the present application may be practiced without modification or with equivalents of some of the features described in the foregoing embodiments. All equivalent structures made by using the contents of the specification and the drawings of the present application are directly or indirectly applied to other related technical fields and are within the protection scope of the present application.

Claims (9)

1. The utility model provides a transfer model carborundum intelligent power module which characterized in that includes:

the heat dissipation substrate, the signal substrate, the lead frame, the carborundum module and be used for the drive the HVIC encapsulation of carborundum module, the lead frame includes signal side lead frame and power side lead frame, the signal substrate sets up on the signal side lead frame, the HVIC encapsulation sets up on the signal substrate, the heat dissipation substrate sets up one side of signal substrate, the power side lead frame sets up on the heat dissipation substrate, the carborundum module sets up on the heat dissipation substrate or on the power side lead frame.

2. The transfer model silicon carbide smart power module of claim 1, wherein the heat sink substrate comprises one of an IMS substrate, a DBC substrate, and a Hiset substrate.

3. The transfer model silicon carbide smart power module of claim 2, wherein when the heat spreader substrate is a DBC substrate, the power-side lead frame is disposed on an edge of a side of the DBC substrate away from the signal substrate, the silicon carbide module being disposed on a side of the DBC substrate proximate to the signal substrate.

4. The transfer model silicon carbide smart power module of claim 2, wherein when the heat dissipating substrate is a Hiset substrate, the power side lead frame overlies the Hiset substrate, the silicon carbide module being disposed on the power side lead frame overlying the Hiset substrate.

5. The transfer mode silicon carbide smart power module of claim 1, wherein the silicon carbide module is one of a one-way silicon carbide module, a half-bridge silicon carbide module, an H-bridge silicon carbide module, a full-bridge silicon carbide module.

6. The transfer mode silicon carbide smart power module of claim 1, further comprising a molding compound injected by an epoxy injection molding process to encapsulate the heat spreader substrate or portions thereof, the signal substrate, portions of the lead frame, the HVIC package, and the silicon carbide module.

7. The transfer mode silicon carbide smart power module of any one of claims 1-6, wherein the signal substrate is a PCB board.

8. The utility model provides a transfer model carborundum intelligent power module which characterized in that includes: heat dissipation base plate, pin frame, carborundum module and be used for the drive the HVIC encapsulation of carborundum module, pin frame includes signal side pin frame and power side pin frame, signal side pin frame sets up on the edge of heat dissipation base plate one side, HVIC encapsulation and the carborundum module sets up side by side on the heat dissipation base plate, power side pin frame sets up heat dissipation base plate is kept away from on the edge of signal side pin frame one side.

9. The transfer model silicon carbide smart power module of claim 8, wherein the heat-dissipating substrate comprises one of an IMS substrate, a DBC substrate, and a hi set substrate.

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