CN214753796U - Cell structure and solar cells and photovoltaic modules - Google Patents

Abstract

Translated fromChinese

本实用新型公开了一种电池片结构及太阳能电池片和光伏组件，其中电池片结构由上至下依次包括正面主栅线、正面TCO导电层、正面钝化减反层、掺杂层、晶硅衬底、背面钝化层、背面TCO导电层以及背面主栅线，所述正面TCO导电层与正面钝化减反层之间相互嵌合，所述背面TCO导电层与背面钝化层之间相互嵌合。正面主栅线只与正面TCO导电层接触、不与正面钝化减反层、掺杂层或晶硅衬底接触，背面主栅线只与背面TCO导电层接触，不与背面钝化层或晶硅衬底接触。本实用新型的电池片结构通过透明导电薄膜材料(TCO导电层)来收集传输载流子，替代常规的副栅线，可以大大减少正面和背面栅线的遮光面积，增加光的利用率，减少载流子传输的串阻，提高太阳能电池的转换效率。

The utility model discloses a cell structure, a solar cell and a photovoltaic assembly, wherein the cell structure comprises a front busbar, a front TCO conductive layer, a front passivation antireflection layer, a doping layer, a crystal The silicon substrate, the back passivation layer, the back TCO conductive layer and the back busbar, the front TCO conductive layer and the front passivation anti-reflection layer are embedded with each other, and the back TCO conductive layer and the back passivation layer are interfitted with each other. interfit with each other. The front busbar is only in contact with the front TCO conductive layer, not with the front passivation antireflection layer, doped layer or crystalline silicon substrate, and the back busbar is only in contact with the back TCO conductive layer, not with the back passivation layer or crystalline silicon substrate contacts. The cell structure of the utility model collects and transmits carriers through the transparent conductive film material (TCO conductive layer), replaces the conventional auxiliary grid lines, can greatly reduce the shading area of the front and back grid lines, increases the utilization rate of light, reduces the The string resistance of carrier transport improves the conversion efficiency of solar cells.

Description

Cell structure, solar cell and photovoltaic module

Technical Field

The utility model belongs to the technical field of photovoltaic module, concretely relates to battery piece structure, including the solar wafer of this battery piece structure and included the photovoltaic module of this solar wafer.

Background

At present, the manufacturing process of the single crystal PERC solar cell mainly comprises: texturing, diffusion, SE, etching, annealing, back surface deposition of a passivation film, front surface deposition of a passivation anti-reflection film, back surface laser grooving, screen printing and sintering. The current limitations on the conversion efficiency of PERC solar cells are mainly the following: 1. the shading area of the metal slurry; 2. high recombination current in the metal paste zone. Both of the two points are related to the slurry, and if the coverage area of the slurry on the surface of the silicon wafer is reduced, the coverage area of the metal slurry can be reduced, and the area of a metal high recombination region can also be reduced.

Besides PERC cells, heterojunction HJT cells are relatively popular, and the main flow is as follows: the method comprises the steps of texturing cleaning, deposition of an amorphous silicon film, deposition of a transparent conductive film TCO and screen printing sintering, wherein the TCO film can realize electric conduction and antireflection and protects the amorphous silicon film.

Therefore, the existing crystalline silicon solar cell technology and the heterojunction HJT technology are combined, a novel solar cell structure is provided, and a solar cell with higher efficiency can be obtained.

Disclosure of Invention

In view of this, in order to overcome the defects in the prior art, the utility model aims at providing an improved battery piece structure has reduced the shading area of the positive and back grid line of traditional battery piece, and has reduced the string of carrier transmission and hinder, improves solar cell's conversion efficiency.

In order to achieve the above purpose, the utility model adopts the following technical scheme:

the utility model provides a battery piece structure, includes front main grid line, front TCO conducting layer, front passivation antireflection layer, doping layer, crystal silicon substrate, back passivation layer, back TCO conducting layer and back main grid line from top to bottom in proper order, gomphosis each other between front TCO conducting layer and the front passivation antireflection layer, gomphosis each other between back TCO conducting layer and the back passivation layer. The front main grid line is only contacted with the front TCO conductive layer and is not contacted with the front passivation antireflection layer, the doping layer or the crystalline silicon substrate, and the back main grid line is only contacted with the back TCO conductive layer and is not contacted with the back passivation layer or the crystalline silicon substrate.

The embedding in this application is for seting up the laser groove on positive passivation antireflection layer or the back passivation layer (can be for the position that corresponds traditional vice grid line), later redeposit the TCO conducting layer again, make TCO conducting layer and positive passivation antireflection layer or the mutual gomphosis of back passivation layer, and set up the laser groove and make TCO conducting layer and doping layer or crystal silicon substrate direct contact, collect the transmission carrier through transparent conductive film material (TCO conducting layer), replace conventional vice grid line, can significantly reduce the shading area of positive and back grid line, thereby greatly increase the utilization ratio of light, reduce the series resistance of carrier transmission, be favorable to improving solar cell's conversion efficiency.

According to some preferred embodiments of the present invention, the front passivation anti-reflection layer has a front laser groove opened by laser, and the front TCO conductive layer is filled in the front laser groove and covered on the front passivation anti-reflection layer; the back passivation layer is provided with a back laser groove formed by laser, and the back TCO conductive layer is filled in the back laser groove and covers the back passivation layer. The laser parameters of the laser (532nm-556nm, green) grooving are as follows: the laser power is 12w-30w, and the laser frequency is 900 KHz. The widths of the front laser groove and the back laser groove obtained by laser grooving are 10-120 um; the depth is 0.5-2 um.

According to some preferred embodiments of the present invention, each of the front laser grooves and/or the back laser grooves is formed continuously or intermittently. The front laser groove and/or the back laser groove are arranged corresponding to the positions of the secondary grid lines in the traditional battery piece, and the distance between the adjacent laser grooves is 1mm-1.3 mm. When the laser grooves are discontinuously arranged, namely the same laser groove comprises a plurality of short grooves on the same extension line, a form similar to a dotted line is formed, the distance between the end parts of the adjacent short grooves in the same laser groove is 0.2mm-0.7mm, and the short grooves on the adjacent laser grooves are preferably arranged in a staggered manner. When the laser groove is opened discontinuously, the combination effect of the TCO conducting layer and the front passivation antireflection layer or the back passivation layer is increased, the laser ablation area is reduced, the damage to the silicon wafer is reduced, the opening pressure can be improved, and the efficiency of the cell can also be improved.

According to some preferred embodiments of the present invention, the area ratio (aperture ratio) of the front side laser groove to the front side passivation anti-reflection layer is smaller than the area ratio (aperture ratio) of the back side laser groove to the back side passivation layer. In some embodiments, the area of the front side laser grooves accounts for 1-6%, preferably 2.5% -2.7% of the area of the front side passivation anti-reflection layer; the area of the back laser groove accounts for 2-8%, preferably 2.8% -3.2% of the area of the back passivation layer. The open porosity is controlled within a certain range, the larger the open porosity is, the smaller the series resistance is, the better the contact is, the higher the filling factor of the battery is, but the efficiency of the battery piece can be reduced due to the damage of the laser to the surface. On the other hand, the structures of the front surface and the back surface of the silicon wafer in the battery are asymmetrical, for example, the front surface of the silicon wafer is provided with a P-N junction, a passivation layer and an antireflection layer are generally deposited on the front surface, the back surface of the silicon wafer is not provided with the P-N junction, and only the passivation layer structure is generally deposited on the back surface, so that the series resistance generated on the front surface and the back surface of the silicon wafer is different, the grooving positions of the front surface and the back surface of the silicon wafer are not corresponding, and the aperture ratio of the back surface is greater than that of the front surface, so that the better battery efficiency is achieved.

According to some preferred embodiments of the present invention, the depth of the front side laser groove is greater than or equal to the thickness of the front side passivation anti-reflection layer, and the depth of the back side laser groove is greater than or equal to the thickness of the back side passivation layer. The depth of the laser groove is equal to or larger than the thickness of the front passivation anti-reflection layer or the back passivation layer, so that the TCO conducting layer is directly contacted with the doping layer or the crystalline silicon substrate, the traditional secondary grid line is replaced, and the current collecting effect is achieved.

According to some preferred embodiments of the invention, the front TCO conductive layer and/or the back TCO conductive layer is a transparent conductive oxide material ITO. The transparent conductive oxide material ITO is a transparent conductive material, so that the shading area of the cell is reduced, meanwhile, the whole surface is coated with the TCO material, so that the transmission path of electrons is reduced, the crosstalk is reduced, and the efficiency of the solar cell is improved.

According to some preferred embodiments of the present invention, the front passivation anti-reflection layer is a SiNx stacked film, a SiNx/SiO stacked film, or a SiNx/sion x/SiO stacked film, and the back passivation layer is a SiNx stacked film, or Al₂O₃A laminated film of/SiNx or a laminated film of SiNx/SiOx. The front passivation anti-reflection layer reduces the reflection of light, so that more light enters the solar cell, and meanwhile, the surface of the solar cell is passivated, and the recombination loss of the front surface is reduced; the back passivation layer passivates the back surface, reducing recombination losses at the back surface.

The utility model also provides a solar wafer of including as above the battery piece structure.

The utility model also provides a photovoltaic module of including as above solar wafer.

Compared with the prior art, the utility model discloses an useful part lies in: the utility model discloses a battery piece structure, TCO conducting layer subtracts anti-layer or the mutual gomphosis of back passivation layer with positive passivation, and set up the laser tank and make TCO conducting layer and N type P type doped layer or crystal silicon substrate direct contact, collect the transmission carrier through transparent conductive film material (TCO conducting layer), replace conventional vice grid line, the shading area of front and back grid line that can significantly reduce, thereby greatly increase the utilization ratio of light, reduce the string of carrier transmission and hinder, be favorable to improving solar cell's conversion efficiency.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.

Fig. 1 is a schematic front view of a solar cell in an embodiment of the present invention;

fig. 2 is a schematic cross-sectional view of a solar cell along the extending direction of the front main grid line in the embodiment of the present invention;

fig. 3 is a schematic cross-sectional view of a solar cell along the extending direction of a laser groove according to an embodiment of the present invention;

fig. 4 is a schematic cross-sectional view of a solar cell along the extending direction of the laser groove according to another embodiment of the present invention;

wherein the reference numerals include: the manufacturing method comprises the following steps of 1-electrode, 2-laser groove, 3-silicon chip, 4-front main grid line, 5-front TCO conducting layer, 6-front passivation anti-reflection layer, 7-doping layer, 8-crystalline silicon substrate, 9-back passivation layer, 10-back TCO conducting layer and 11-back main grid line.

Detailed Description

In order to make the technical solution of the present invention better understood, the technical solution of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts shall belong to the protection scope of the present invention.

Example 1 solar cell and photovoltaic Module

The photovoltaic module in this embodiment includes front bezel, preceding encapsulated layer, battery layer, back encapsulated layer and back plate from top to bottom in proper order, and wherein, the battery layer is formed after a plurality of battery pieces regular spread. As shown in fig. 1-3, the solar cell in this embodiment has a structure that includes, from top to bottom, a frontmain gate line 4, a front TCOconductive layer 5, and a front passivation layerThe thin film transistor structure comprises aantireflection layer 6, an N/Ptype doping layer 7, a P/N typecrystalline silicon substrate 8, a back passivation layer 9, a back TCOconductive layer 10 and a backmain grid line 11. In this embodiment, the front TCOconductive layer 5 and the back TCOconductive layer 10 are ITO, which is a transparent conductive oxide material. The front passivationanti-reflection layer 6 is a SiNx film, and the back passivation layer 9 is Al₂O₃A laminated film of/SiNx. The frontmain gate line 4 and the backmain gate line 11 are electrodes 1.

The front passivationanti-reflection layer 6 is provided with afront laser groove 2 formed by laser, and the front TCOconductive layer 5 is filled in thefront laser groove 2 and covers the front passivationanti-reflection layer 6; the back passivation layer 9 has aback laser groove 2 opened by laser, and the back TCOconductive layer 10 is filled in theback laser groove 2 and covers the back passivation layer 9. So that the front TCOconductive layer 5 and the front passivationanti-reflection layer 6 are mutually embedded, and the back TCOconductive layer 10 and the back passivation layer 9 are mutually embedded. The depth of thefront laser groove 2 is consistent with the thickness of the front passivationanti-reflection layer 6, and the depth of theback laser groove 2 is consistent with the thickness of the back passivation layer 9, so that the TCO conducting layer is in direct contact with thedoping layer 7 or thecrystalline silicon substrate 8, the traditional secondary grid line is replaced, and the current collection effect is achieved.

In this embodiment, the widths of thefront laser groove 2 and theback laser groove 2 obtained by laser grooving are 35 um; the depth is 1 um. Thefront laser groove 2 and theback laser groove 2 are arranged at positions corresponding to the auxiliary grid lines in the traditional battery piece, and the distance between theadjacent laser grooves 2 is as follows: the distance between theadjacent laser grooves 2 on the back surface is 1mm-1.1mm, and the distance between thelaser grooves 2 on the front surface is 1.15mm-1.25 mm. The aperture ratio of theback laser groove 2 in this embodiment is: 3.0 percent; the aperture ratio of the front laser was 2.6%.

In this embodiment, thefront laser groove 2 and theback laser groove 2 are provided intermittently, that is, thesame laser groove 2 includes a plurality of short grooves on the same extension line, so as to form a form similar to a dotted line, and the distance between the end portions of the adjacent short grooves in thesame laser groove 2 is 0.5 mm. When thelaser groove 2 is discontinuously opened, the combination effect of the TCO conducting layer and the front passivationanti-reflection layer 6 or the back passivation layer 9 is increased, the ablation area of laser is reduced, the damage to the silicon wafer 3 is reduced, and the opening pressure Uoc is improved. In other embodiments, when the laser grooves are discontinuously arranged, the short grooves in the adjacent laser grooves are staggered; or eachfront laser groove 2 and/or eachback laser groove 2 may be continuously opened, as shown in fig. 4.

The embedding in this embodiment is to set alaser groove 2 at a position corresponding to a conventional sub-grid line on the front passivationanti-reflection layer 6 or the back passivation layer 9, and then deposit a TCO conductive layer, so that the TCO conductive layer is embedded with the front passivationanti-reflection layer 6 or the back passivation layer 9, and set thelaser groove 2 so that the TCO conductive layer is in direct contact with the N-type/P-type doping layer 7 or thecrystalline silicon substrate 8, and collect and transmit carriers through a transparent conductive film material (TCO conductive layer), so as to replace a conventional sub-grid line, so that the light shielding areas of the front and back grid lines can be greatly reduced, thereby greatly increasing the utilization rate of light, reducing the crosstalk of carrier transmission, and being beneficial to improving the conversion efficiency of the solar cell.

Example 2 preparation method of solar cell sheet

The preparation method of the high-efficiency solar cell of the embodiment comprises the following steps: s1: texturing; s2: diffusing; s3: SE heavy doping S4: etching and back polishing; s5: annealing; s6: depositing SiNx on the front surface; s7: back side Al₂O₃/SiNx deposition; s8: laser grooving on the front surface; s9: laser grooving on the back; s10: annealing; s11: depositing a front TCO; s12: back TCO deposition; s13: printing and drying a back electrode; s14: printing an Ag main grid on the front surface, and sintering at low temperature.

Each step is as follows:

step S1: texturing method

A P-type monocrystalline silicon wafer is selected as a base material (a crystalline silicon substrate) and subjected to a texturing process. And forming a textured surface on the surface of the silicon wafer by using a wet etching technology, wherein the weight reduction is controlled to be 0.6g, and the reflectivity is controlled to be 12%.

Step S2: diffusion

And performing a diffusion process on the crystalline silicon substrate to form a diffusion layer.

Step S3: SE heavy doping

And carrying out SE doping on the diffusion layer to form an N-type doping layer.

Step S4: etching and back polishing

And etching and back polishing the silicon wafer with the N-type doped layer.

Step S5: annealing

And carrying out an oxidation annealing process on the silicon wafer.

Step S6: front side SiNx deposition

And performing a SiNx deposition process on the front surface of the silicon wafer to prepare a silicon nitride front passivation anti-reflection layer, wherein the thickness of the silicon nitride front passivation anti-reflection layer is controlled to be 70nm, and the refractive index is controlled to be 2.2.

Step S7: back side Al₂O₃/SiNx deposition

Carrying out Al on the back of the silicon wafer₂O₃/SiNx deposition process to prepare Al₂O₃And a/SiNx back passivation layer with the thickness controlled at 100 nm.

Step S8: front laser grooving

And carrying out laser grooving treatment on the front passivation anti-reflection layer on the front side of the silicon wafer. Grooving the SiNx passivation antireflection film on the front surface of the silicon wafer through laser equipment, wherein the thickness of the front surface laser groove is consistent with that of the front surface passivation antireflection layer, and the exposed silicon at the grooving position just contacts with the TCO transparent conductive film to collect transmitted carriers.

Step S9: back laser grooving

Al on the back of the silicon wafer by laser equipment₂O₃And grooving the SiNx passivation film (back passivation layer), wherein the thickness of the formed back laser groove is consistent with that of the back passivation layer, and the exposed silicon at the grooving position is just in contact with the TCO transparent conductive film to collect the transmitted current carriers.

In steps S8 and S9, the laser grooves formed by the laser device are used, and the opening ratio of the back laser grooves is: 3.0 percent; the aperture ratio of the front laser was 2.6%. Adopting 532nm-556nm green laser to perform slotting, wherein the parameters are as follows: the laser power is 20w, and the laser frequency is 900 KHz. The widths of the front laser groove and the back laser groove obtained by laser grooving are 35 um; the depth is 1 um. The distance between adjacent laser grooves is as follows: the distance between the adjacent laser grooves on the back surface is 1mm-1.1mm, and the distance between the laser grooves on the front surface is 1.15mm-1.25 mm. The laser grooves are discontinuously arranged, and the distance between the end parts of the adjacent short grooves in the same laser groove is 0.5 mm.

Step S10: annealing

And carrying out an oxidation annealing process on the silicon wafer.

Step S11: front side TCO deposition

And carrying out TCO deposition process on the front side of the silicon wafer to form a front TCO layer, wherein the TCO material can be in contact with the silicon wafer anode exposed in the step S8.

Step S12: backside TCO deposition

And carrying out TCO deposition process on the back of the silicon wafer to form a back TCO layer, wherein the TCO material can be in contact with the silicon wafer cathode exposed in the step S9.

In steps S11 and S12, a transparent conductive oxide material ITO is deposited using a PVD or RPD apparatus to form a TCO conductive layer, the thickness of the ITO being controlled at 60 nm.

Step S13: back electrode printing and drying

And printing and drying a back electrode on the back of the silicon wafer to form a back main grid line.

Step S14: front printing Ag main grid

And carrying out silk-screen printing and low-temperature sintering on the front side of the silicon wafer to form the front side main grid line.

In steps S13 and S14, silver paste is printed on TCO using a screen printing process and sintered at a low temperature, with the sintering temperature controlled at 220 ℃.

The steps are distinguished and numbered for convenience of description and understanding, and in actual preparation, some of the steps such as deposition of steps S6 and S7, laser grooving of steps S8 and S9, electrode printing of steps S11 and S12, and the like can be performed simultaneously or sequentially.

Example 3

The structure of the cell in this embodiment is substantially the same as that in embodiment 1, except that the laser grooves in this embodiment are continuously formed.

Comparative example 1

The back structure of the cell sheet in this comparative example is substantially the same as that of example 1, and the front structure is the same as that of a conventional PERC cell, that is, the front surface of the cell sheet is, from top to bottom: metal electrode, passivation anti-reflection layer, N⁺A diffusion layer,A silicon substrate.

Comparative example 2

The structure of the front side of the cell in the comparative example is basically the same as that of the embodiment 1, and the structure of the back side of the cell is the same as that of the traditional PERC cell, namely the back side of the cell sequentially comprises from bottom to top: metal electrode, passivation layer, silicon substrate.

Comparative example 3

The cell in this comparative example was a conventional PERC cell.

Comparative example 4

The cell front side structure and the back side structure in this comparative example were substantially the same as those in example 1, but the silicon wafer had the same open area ratio in the front side as in the back side and the same positions of the laser grooves.

Example 4 discussion of testing and results

The cells of examples 1 and 3 and comparative examples 1 to 3 were tested for correlation performance using a conventional hall tester for testing crystalline silicon solar cells. The test results are given in the following table:

TABLE 1 test results

	Uoc	Jsc	FF	Eta
					Example 2	0.6895	41.526	80.45％	23.03％
Example 3	0.6893	41.521	80.59％	23.06％
					Comparative example 1	0.6892	40.659	81.11％	22.73％
Comparative example 2	0.6893	41.531	80.55％	23.06％
					Comparative example 3	0.6890	40.631	81.65％	22.86％
Comparative example 4	0.6897	41.522	80.18％	22.96％

The results of the above table show that: the transparent conductive film is used for replacing the traditional slurry, the shading is reduced, the short-circuit current density Jsc is improved, the improvement is about 0.9A, meanwhile, the open voltage Uoc is improved to a small extent, but the conductivity of the transparent conductive film ITO is lower than that of the traditional metal conductive slurry, so that the FF can be reduced by using the transparent conductive film, the overall efficiency is still improved by 0.15%, the metal conductive slurry is not used, the cost of the battery piece is greatly reduced, and the cost reduction effect is achieved.

The utility model relates to a high-efficient solar wafer and preparation method thereof through the technology advantage of combining heterojunction solar cell and crystalline silicon solar cell's technology a bit, provides a new high-efficient solar cell's preparation method. The utility model discloses a preparation method of solar wafer, the laser groove is seted up to the position that corresponds traditional fly line on positive passivation antireflection layer or the back passivation layer, later the TCO conducting layer of redeposition, make TCO conducting layer and positive passivation antireflection layer or the mutual gomphosis of back passivation layer, and set up the laser groove and make TCO conducting layer and doping layer or crystal silicon substrate direct contact, collect the transmission carrier through transparent conductive film material (TCO conducting layer), replace conventional fly line, the shading area of front and back grid line that can significantly reduce, thereby greatly increase the utilization ratio of light, reduce the string resistance of carrier transmission, be favorable to improving solar cell's conversion efficiency.

The above embodiments are only for illustrating the technical concept and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and to implement the present invention, so as not to limit the protection scope of the present invention, and all equivalent changes or modifications made according to the spirit of the present invention should be covered by the protection scope of the present invention.

Claims (10)

Translated fromChinese

1.一种电池片结构，其特征在于：由上至下依次包括正面主栅线、正面TCO导电层、正面钝化减反层、掺杂层、晶硅衬底、背面钝化层、背面TCO导电层以及背面主栅线，所述正面TCO导电层与正面钝化减反层之间相互嵌合，所述背面TCO导电层与背面钝化层之间相互嵌合。1. a cell structure, it is characterized in that: comprise front busbar, front TCO conductive layer, front passivation antireflection layer, doped layer, crystalline silicon substrate, back passivation layer, back side successively from top to bottom The TCO conductive layer and the back busbar, the front TCO conductive layer and the front passivation antireflection layer are fitted with each other, and the back TCO conductive layer and the back passivation layer are fitted with each other.2.根据权利要求1所述的电池片结构，其特征在于：所述正面钝化减反层上具有由激光开设的正面激光槽，所述正面TCO导电层填充在所述正面激光槽内以及覆盖在正面钝化减反层上；所述背面钝化层具有由激光开设的背面激光槽，所述背面TCO导电层填充在所述背面激光槽内以及覆盖在背面钝化层上。2. The cell structure according to claim 1, wherein the front passivation antireflection layer has a front laser slot opened by a laser, the front TCO conductive layer is filled in the front laser slot and Covered on the front passivation antireflection layer; the back passivation layer has a back laser groove opened by a laser, and the back TCO conductive layer is filled in the back laser groove and covered on the back passivation layer.3.根据权利要求2所述的电池片结构，其特征在于：每条所述正面激光槽和/或背面激光槽为连续开设或间断开设。3 . The cell structure according to claim 2 , wherein each of the front laser grooves and/or the back laser grooves is opened continuously or intermittently. 4 .4.根据权利要求2所述的电池片结构，其特征在于：所述正面激光槽的面积占所述正面钝化减反层的面积比小于所述背面激光槽的面积占所述背面钝化层的面积比。4 . The cell structure according to claim 2 , wherein the area of the front laser groove accounts for an area ratio of the front passivation antireflection layer smaller than the area of the back laser groove accounts for the back passivation. 5 . The area ratio of the layers.5.根据权利要求2所述的电池片结构，其特征在于：所述正面激光槽的面积占所述正面钝化减反层的面积的1-6％；所述背面激光槽的面积占所述背面钝化层的面积的2-8％。5. The cell structure according to claim 2, characterized in that: the area of the front laser groove accounts for 1-6% of the area of the front passivation antireflection layer; 2-8% of the area of the backside passivation layer.6.根据权利要求2所述的电池片结构，其特征在于：所述正面激光槽的深度大于或等于所述正面钝化减反层的厚度，所述背面激光槽的深度大于或等于所述背面钝化层的厚度。6. The cell structure according to claim 2, wherein the depth of the front laser groove is greater than or equal to the thickness of the front passivation anti-reflection layer, and the depth of the back laser groove is greater than or equal to the thickness of the front laser groove The thickness of the backside passivation layer.7.根据权利要求1所述的电池片结构，其特征在于：所述正面TCO导电层和/或背面TCO导电层为透明导电氧化物材料ITO。7 . The cell structure according to claim 1 , wherein the front TCO conductive layer and/or the back TCO conductive layer is a transparent conductive oxide material ITO. 8 .8.根据权利要求1所述的电池片结构，其特征在于：所述正面钝化减反层为SiNx膜，或SiNx/SiO的叠层膜，或SiNx/SiONx/SiO的叠层膜，所述背面钝化层为SiNx膜，或Al₂O₃/SiNx的叠层膜，或SiNx/SiOx的叠层膜。8. The cell structure according to claim 1, wherein the front passivation antireflection layer is a SiNx film, or a SiNx/SiO laminate film, or a SiNx/SiONx/SiO laminate film, so The backside passivation layer is a SiNx film, or a laminated film of Al₂ O₃ /SiNx, or a laminated film of SiNx/SiOx.9.一种包括了如权利要求1-8任意一项所述的电池片结构的太阳能电池片。9. A solar cell comprising the cell structure of any one of claims 1-8.10.一种包括了如权利要求9所述的太阳能电池片的光伏组件。10. A photovoltaic module comprising the solar cell of claim 9.

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