SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a structure, display panel and display device are shaded aims at keeping luminance and demonstration colour in a poor light to improve display effect.
In order to achieve the above object, the utility model provides a structure in a poor light, including a plurality of backlight unit, backlight unit includes three bluish LED chip and a purplish blue LED chip, three bluish LED chip with line between the purplish blue LED chip encloses into the quadrangle.
In an alternative embodiment, the quadrilateral is a rhombus.
In an alternative embodiment, the centers of the violet-blue LED chips are respectively equidistant from the centers of the three cyan-blue LED chips.
In an alternative embodiment, the backlight units are arranged in rows, and in the same row of backlight units, the minimum distance between two adjacent backlight units is equal to the distance between the centers of two adjacent LED chips.
In an alternative embodiment, the minimum distance between two adjacent rows of backlight units is equal to the distance between the centers of two adjacent LED chips.
In an alternative embodiment, the distance between two adjacent LED chips is 0.6 mm-20 mm.
In an optional embodiment, the emission wavelengths of the three cyan-blue LED chips are 460nm-465nm, and the emission wavelength of the violet-blue LED chip is 435nm-440 nm.
In an optional embodiment, the ratio of the electromagnetic radiation power output energy of the three bluish LED chips to the electromagnetic radiation power output energy of the purplish blue LED chip is (4.2-5.4): 1.
in order to achieve the above object, the present invention also provides a display panel including the backlight structure as described above.
In order to achieve the above object, the present invention also provides a display device including the display panel as described above.
The utility model provides a structure, display panel and display device are shaded, wherein, the structure of being shaded includes a plurality of backlight units, and backlight unit includes three blue LED chip and a violet LED chip, three blue LED chip with line between the violet LED chip encloses into the quadrangle, wherein, blue LED chip with violet LED chip all is used for launching the blue light. That is, in this embodiment, two types of cyan LED chips and violet LED chips with different emission wavelengths are disposed in the backlight unit, so that the output amount of blue light of the backlight structure can be adjusted, and further, the backlight brightness and chromaticity are maintained, and the display effect is improved.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
It should be noted that all the directional indicators (such as upper, lower, left, right, front and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the motion situation, etc. in a specific posture (as shown in the drawings), and if the specific posture is changed, the directional indicator is changed accordingly.
In addition, the technical solutions in the embodiments may be combined with each other, but it must be based on the realization of those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should not be considered to exist, and is not within the protection scope of the present invention.
The utility model provides a structure is shaded.
Referring to fig. 1, abacklight structure 1000 according to the present invention includes a plurality ofbacklight units 100, and the plurality ofbacklight units 100 may be arranged in an array; eachbacklight unit 100 comprises asubstrate base plate 10, threecyan LED chips 21 and one purpleblue LED chip 22, wherein the threecyan LED chips 21 and the purpleblue LED chip 22 are arranged on thesubstrate base plate 10, and a connecting line between the threecyan LED chips 21 and the purpleblue LED chip 22 forms a quadrangle, wherein thecyan LED chips 21 and the purpleblue LED chips 22 are both used for emitting blue light, and the emission wavelength of the purpleblue LED chips 22 is smaller than the emission wavelength of the threecyan LED chips 21. That is, in this embodiment, two different types of thecyan LED chip 21 and theviolet LED chip 22 with different emission wavelengths are disposed in thebacklight unit 100, and the emission wavelength of thecyan LED chip 21 is set to be greater than the emission wavelength of theviolet LED chip 22, so that the blue light output of thebacklight structure 1000 can be adjusted, and further, the backlight brightness and chromaticity are maintained, and the display effect is improved.
In this embodiment, four LED chips, that is, threecyan LED chips 21 and oneviolet LED chip 22, are disposed in onebacklight unit 100, so that the structure between the four LED chips is more compact and the distance between the four LED chips is smaller, and the brightness of light emitted by the four LED chips is higher, especially in the daytime Mode (dayright Mode), the HDR (High Dynamic Range, High Dynamic Range display) reaches the maximum value of the brightness.
That is, since thebacklight unit 100 includes threecyan LED chips 21 and oneviolet LED chip 22, and a connecting line between the threecyan LED chips 21 and theviolet LED chip 22 forms a quadrangle, the quadrangle has four corner regions, and each LED chip is disposed in the four corner regions of the quadrangle.
Optionally, in this embodiment, the quadrangle is a rhombus.
It is understood that "C" in fig. 1 is a cyan LED chip and "V" is a violet LED chip, and fig. 1 also only shows a part of the cyan LED chips and the arrangement of the violet LED chips in the backlight structure, and not all the LED chips in the backlight structure.
In an embodiment, the material of thesubstrate base plate 10 may include, but is not limited to, a glass material, a metal material, a plastic material, etc., such as: thesubstrate base plate 10 formed of one or more of various materials such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and Polyimide (PI) may be used as long as it can support each component of thebacklight unit 100. Thesubstrate base plate 10 may also be bendable or foldable. And thesubstrate 10 is further provided with a non-display area for defining the pixel display area, and the non-display area is generally provided with a driving circuit, so as to ensure the normal operation of thebacklight structure 1000. The number of pixel display areas may be a plurality of unconnected areas and thus may be used to house a plurality of display modules.
Further, thecyan LED chips 21 are integrated on thesubstrate base plate 10, and the central positions of thecyan LED chips 21 are arranged in a regular triangle or regular hexagon manner, so that the cyan light emitted by thecyan LED chips 21 has a better light emitting surface and uniformity in the surface of thebacklight structure 1000; theviolet LED chips 22 are integrated on thesubstrate 10, and the central positions of theviolet LED chips 22 are arranged in a regular triangle or a regular hexagon, so that the violet light emitted by theviolet LED chips 22 has a better light emitting surface and uniformity in the surface of thebacklight structure 1000.
Of course, it is understood that in practical design, the central positions of the cyan LED chip and the purple LED chip may have size deviations due to the constraints of the length and width dimensions of thebacklight structure 1000, but may be ignored in the present embodiment.
Optionally, the emission wavelengths of the threebluish LED chips 21 are 460nm to 465nm, and the emission wavelength of the purpleblue LED chip 22 is 435nm to 440 nm. Because of being limited by the principle of total reflection, the emission wavelength of thecyan LED chip 21 is slightly longer than the emission wavelength of theviolet LED chip 22, that is, the refractive index of the luminescent material in thecyan LED chip 21 is smaller than the refractive index of the luminescent material in theviolet LED chip 22, the light extraction efficiency (light extraction efficiency) of thecyan LED chip 21 is greater than the light extraction efficiency of theviolet LED chip 22, and the internal quantum efficiency (internal quantum efficiency) of thecyan LED chip 21 is the same as that of theviolet LED chip 22.
Further, the ratio of the electromagnetic radiation power output energy of the threebluish LED chips 21 to the electromagnetic radiation power output energy of thepurple LED chip 22 is (4.2-5.4): 1. in practical applications, since the electromagnetic radiation power output energy of theviolet LED chip 22 is low, that is, theviolet LED chip 22 is suitable for outputting in the night mode state, but in the daytime mode state, theviolet LED chip 22 can also control light emission according to the current color gamut to serve as the auxiliary light of thecyan LED chip 21.
Further, the distances between the centers of theviolet LED chips 22 and the centers of the threecyan LED chips 21 are equal, that is, the violet light emitted by theviolet LED chips 22 and the cyan light emitted by the threecyan LED chips 21 are uniformly mixed, so as to improve the brightness and the display color of thebacklight structure 1000.
For example, as shown in fig. 1 (wherecyan LED chips 211, 212, and 213 are the same chips ascyan LED chip 21, and the illustration is merely for convenience of description of the present embodiment), a distance between the center of themagenta LED chip 22 and the center of thecyan LED chip 211 is d211, a distance between the center of themagenta LED chip 22 and the center of thecyan LED chip 212 is d212, and a distance between the center of the magentaLED chip 22 and the center of thecyan LED chip 213 is d213, in which case, d211 is d212 —d 213.
Further, the plurality ofbacklight units 100 are arranged in a plurality of rows, and in the same row ofbacklight units 100, the minimum distance between twoadjacent backlight units 100 is equal to the distance between the centers of two adjacent LED chips. In the same row ofbacklight units 100, the minimum distance between twoadjacent backlight units 100 is the distance between two LED chips close to each other in each of thebacklight units 100, for example, the minimum distance between twoadjacent backlight units 100 shown in fig. 1 is the distance Dmin1 between thecyan LED chip 21a and themagenta LED chip 22a, and the distance D between the centers of two adjacent LED chips, where Dmin1 is D, so that the backlight structure is more compact and the distance between the two adjacent LED chips is smaller, thereby improving the uniformity of light, and facilitating the miniaturization of the device. The two adjacent LED chips are the adjacentcyan LED chip 21 and the purpleblue LED chip 22, or the two adjacentcyan LED chips 21.
Further, in order to further improve the compactness of the backlight structure and the uniformity of light, the minimum distance Dmin2 between two adjacent rows of backlight units is equal to the distance D between the centers of two adjacent LED chips, where Dmin2 ═ D, that is, the minimum distance between twoadjacent backlight units 100 in the same row ofbacklight units 100 is equal to the minimum distance between two adjacent rows of backlight units. Wherein the minimum distance between two adjacent rows ofbacklight units 100 is the distance between two LED chips close to each other in each row of thebacklight units 100, for example, the minimum distance Dmin2 between two adjacent rows of backlight units shown in fig. 1 is the distance between thecyan LED chip 21b and themagenta LED chip 22 b.
Based on the above description, the distance between any two adjacent LED chips is 0.6mm to 20mm, so as to achieve the effect of uniformity of the display surface, reduce the cost, and improve the feasibility of the process.
Further, thebacklight structure 1000 further includes a light conversion element (not shown), and the light conversion element is disposed in the light emitting direction of thecyan LED chip 21 and theviolet LED chip 22. When the two cyan-blue LED chips 21 and the violet-blue LED chip 22 emit blue light, the emitted blue light is emitted to the light conversion element, and is converted into red light and green light; at this time, since the light conversion element has a certain light transmittance, that is, after the threecyan LED chips 21 and theviolet LED chips 22 emit blue light, part of the blue light passes through the light conversion element, and is converged with the converted red light and green light and then emitted onto the lower polarizer of thebacklight structure 1000, so that the display area of thebacklight structure 1000 displays a picture.
Optionally, the light conversion element is a CdSe quantum dot optical film or a phosphor material. The phosphor material of the Red (Red) primary color is K2SiF6: Mn4+, and the phosphor material of the Green (Green) primary color is β -SiAlON: Mn2+, but in other implementations, the phosphor materials of the Red and Green primary colors may be other materials, and are not limited herein.
As shown in fig. 2, the display area of the cyan-blue LED chip 21 is a rhombus formed by two regular triangles or an isosceles trapezoid with different orientations in the middle and inside of the display area of thebacklight structure 1000, and the shape of the display area is different when the beam is subjected to the boundary condition of thebacklight structure 1000 at the edge of the display screen.
As shown in fig. 3, the display area of the violet-blue LED chip 22 is a diamond shape formed by two regular triangles or an isosceles trapezoid shape with different directions in the middle and inside of the display area of thebacklight structure 1000, and the shape of the display area is different at the edge of the display screen when the beam is subjected to the boundary condition of thebacklight structure 1000.
As shown in fig. 4, the LED chip (the blue LED chip and the violet LED chip have similar structures) includes abottom plate 41, and anelectron injection layer 42, alight emitting layer 43, ahole injection layer 44, and anelectron blocking layer 45 sequentially disposed on thebottom plate 41, wherein thelight emitting layer 43 is a quantum well light emitting diode.
Further, thebottom plate 41 is a GaN bottom plate. And the length of the GaN bottom plate is greater than the length of theelectron injection layer 42. In this embodiment, the LED chip further includes a p-type electrode 46 and an n-type electrode 47, the p-type electrode 46 is connected to a side of theelectron blocking layer 45 away from thehole injection layer 44, and the n-type electrode 47 is connected to a portion of the GaN substrate extending theelectron injection layer 42 to turn on an external power source and make thelight emitting layer 43 emit light.
Further, theelectron injection layer 42 is pGaN-Si, i.e., SiH4 on the GaN substrate, where the Si atom replaces Ga atom, and since Ga is trivalent and Si is tetravalent, the corresponding crystal lattice has one more electron, and belongs to n-type doped semiconductor.
Further, thelight emitting layer 43 is a Multiple Quantum Well (MQW), the Multiple Quantum Well is a system combining Multiple Quantum wells, and the barrier layer between the Multiple Quantum wells is thick, and basically has no tunneling coupling and does not form a microstrip.
In the practical engineering of an LED chip, an InGaN structure or a GaN structure with multiple layers (usually 3 to 11 layers) in an epitaxial layer is usually used as a multiple quantum well, and since the forbidden bandwidth of GaN is higher than that of InGaN, injected carriers are limited in a two-dimensional plane thereof and are recombined to emit light.
That is, in order to be able to control the emission wavelength of the LED chip, in the present embodiment, the indium element in thelight emitting layer 43 of thecyan LED chip 21 is larger than the indium element in thelight emitting layer 43 of theviolet LED chip 22; the gallium element in thelight emitting layer 43 of thecyan LED chip 21 is smaller than the gallium element in thelight emitting layer 43 of theviolet LED chip 22.
Optionally, the indium element in thelight emitting layer 43 of thecyan LED chip 21 is 16.7%, and the gallium element in thelight emitting layer 43 of thecyan LED chip 21 is 83.3%; the indium element in thelight emitting layer 43 of theviolet LED chip 22 is 9.5%, and the gallium element in thelight emitting layer 43 of theviolet LED chip 22 is 90.5%. Of course, in other embodiments, specific values of the indium element and the gallium element in thelight emitting layer 43 of thecyan LED chip 21 or theviolet LED chip 22 are not particularly limited.
Further, thehole injection layer 44 is pGaN, and theelectron blocking layer 45 is AlGaN.
Of course, in the present embodiment, a p-AlGaN/GaN superlattice structure is adopted to replace AlGaN as thehole injection layer 44, so that the electron overflow current is reduced, and the hole injection is also increased, so that the electron concentration and the hole concentration are both greatly improved, and the overall performance of the LED chip can be improved.
Based on the above embodiment, the utility model also provides a display panel.
In this embodiment, the display panel includes the backlight structure as described in the above embodiments.
Since the display panel in this embodiment includes the backlight structure of the above embodiment, that is, the display panel includes all technical features and achieved technical effects of the backlight structure in the above embodiment, specific reference is made to the description of the above embodiment, and details are not repeated here.
Based on the above embodiment, the utility model also provides a display device.
In this embodiment, the display device includes the display panel described in the above embodiments.
Since the display device in this embodiment includes the display panel in the above embodiment, that is, the display device includes all technical features and achieved technical effects of the display panel in the above embodiment, specific reference is made to the description of the above embodiment, and no further description is given here.
The above is only the optional embodiment of the present invention, and not therefore the limit to the patent scope of the present invention, all the concepts of the present invention utilize the equivalent transformation made by the contents of the specification and the drawings, or the direct/indirect application in other related technical fields are included in the patent protection scope of the present invention.