CN211199387U - Semiconductor device - Google Patents

Abstract

The utility model provides a semiconductor device, this semiconductor device includes: the transition cavity is arranged in front of the growth cavity; at least one carrier arranged in the transition cavity, wherein the at least one carrier allows at least one tray to be placed, the tray allows a substrate to be placed, and the at least one carrier allows the at least one carrier to be lifted and/or lowered; the cooling plate is arranged in the transition cavity and is opposite to the at least one carrying platform; the air pumping port is arranged on one side of the transition cavity and used for vacuumizing the transition cavity; and the exhaust port is arranged on one side of the transition cavity, and the transition cavity is subjected to vacuum breaking treatment through the exhaust port. The utility model discloses a semiconductor device reasonable in design, simple structure.

Description

Semiconductor device

Technical Field

The utility model relates to a semiconductor field, in particular to semiconductor equipment.

Background

With the continuous progress of the integrated circuit production technology, the integration level of the circuit chip is greatly improved. At present, the number of transistors integrated in a chip has reached a remarkable number of tens of millions, and signal integration of such a large number of active elements requires up to ten or more high-density metal interconnection layers for connection. Therefore, as an important process for preparing the metal interconnection layer, a Physical Vapor Deposition (PVD) technique is widely used.

In the microelectronic product industry, the magnetron sputtering technology is one of important means for producing products such as integrated circuits, liquid crystal displays, thin-film solar cells, L ED and the like, and plays a great role in the fields of industrial production and science.

The commonly used magnetron sputtering equipment comprises a plurality of cavities, and the cavities are mutually associated, so that the magnetron sputtering equipment has a complex structure, low working efficiency and poor film forming quality, and cannot meet the requirement of the market on high-quality products.

SUMMERY OF THE UTILITY MODEL

In view of the above-mentioned prior art's defect, the utility model provides a semiconductor device to simplify semiconductor device's structure, improve work efficiency, improve the homogeneity of coating film.

To achieve the above and other objects, the present invention provides a semiconductor device, including:

the transition cavity is arranged in front of the growth cavity;

at least one carrier arranged in the transition cavity, wherein the at least one carrier allows at least one tray to be placed, the tray allows a substrate to be placed, and the at least one carrier allows the at least one carrier to be lifted and/or lowered;

the cooling plate is arranged in the transition cavity and is opposite to the at least one carrying platform;

the air pumping port is arranged on one side of the transition cavity and used for vacuumizing the transition cavity;

and the exhaust port is arranged on one side of the transition cavity, and the transition cavity is subjected to vacuum breaking treatment through the exhaust port.

In an embodiment, the semiconductor device includes a first stage and a second stage, the first and second stages of the semiconductor are connected to a support plate, the support plate is connected to a control rod, and one end of the control rod is located outside the transition cavity.

In one embodiment, the control rod drives the support plate to ascend and/or descend.

In one embodiment, the cooling plate is secured to the transition cavity by a plurality of brackets.

In an embodiment, the second stage allows access to the cooling plate.

In one embodiment, the control rod drives the support plate to move along a predetermined path when the vacuuming process is performed.

In an embodiment, when the vacuum process is performed, the substrate is disposed on the first stage.

In one embodiment, before the vacuum breaking treatment, the control rod drives the support plate to move in a direction opposite to the preset path.

In an embodiment, when the vacuum breaking process is performed, a predetermined distance is provided between the second stage and the cooling plate.

In an embodiment, the semiconductor device further includes:

a transport chamber, the growth chamber disposed on a sidewall of the transport chamber;

the preheating cavity is arranged on the side wall of the conveying cavity;

and the cleaning cavity is arranged on the side wall of the conveying cavity.

The utility model provides a semiconductor device through setting up the transition cavity before the growth cavity, has simplified this semiconductor device's structure, has guaranteed whole semiconductor device's vacuum seal nature, has improved the quality of film forming from this, has improved the homogeneity of coating film, this semiconductor device simple structure simultaneously, and work efficiency is high.

Drawings

FIG. 1: the transition chamber in this embodiment is schematically illustrated.

FIG. 2: a schematic illustration of the cooling plate in this embodiment.

FIG. 3: the schematic diagram of the base in this embodiment.

FIG. 4: the schematic diagram of the carrier and the tray in this embodiment.

FIG. 5: the present embodiment provides a schematic diagram of a semiconductor device.

Detailed Description

The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The present invention can also be implemented or applied through other different specific embodiments, and various details in the present specification can be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the invention in a schematic manner, and only the components related to the invention are shown in the drawings rather than being drawn according to the number, shape and size of the components in actual implementation, and the form, quantity and proportion of the components in actual implementation may be changed at will, and the layout of the components may be more complicated.

The following description sets forth numerous specific details, such as process chamber configurations and material systems, in order to provide a thorough understanding of embodiments of the present invention. It will be apparent to one skilled in the art that embodiments of the invention may be practiced without these specific details. In other instances, well-known features, such as specific diode configurations, are not described in detail so as not to obscure embodiments of the invention. In addition, it should be understood that the various embodiments shown in the figures are illustrative and not necessarily drawn to scale. Further, other arrangements and configurations may not be explicitly disclosed in the embodiments herein, but are nevertheless considered to be within the spirit and scope of the invention.

Referring to fig. 1, the present embodiment provides a semiconductor apparatus including atransition chamber 320, thetransition chamber 320 includes ahousing 320a, thehousing 320a is, for example, a sealed cylinder, and a pumping hole and an exhaust hole are disposed on a sidewall of thehousing 320 a.

Referring to fig. 1, in the present embodiment, acooling plate 322 is disposed in thetransition cavity 320, and thecooling plate 322 is fixed at the bottom of thecasing 320a through a plurality ofbrackets 321. Thecooling plate 322 can perform a cooling process on the substrate. In this embodiment, thecooling plate 322 may be, for example, cylindrical or rectangular or other shape, and thecooling plate 322 may be fixed in thehousing 320a, for example, by fourbrackets 321.

Referring to fig. 2, in the present embodiment, thecooling plate 322 is cylindrical, and thecooling plate 322 includes a plurality of internal threadedholes 322a, for example, four internal threadedholes 322 a. Corresponding external threads are provided at both ends of thebracket 321, whereby one end of thebracket 321 can be disposed in the internally threadedhole 322 a.

Referring to fig. 3, in the embodiment, the other end of thesupport 321 is fixed in thecasing 320a through abase 3211, thebase 3211 includes a plurality of first threadedholes 3211a and a second threadedhole 3211b, wherein the second threadedhole 3211b is located at a center of thebase 3211, and the plurality of first threadedholes 3211a are uniformly disposed around the second threadedhole 3211 b. The other end of thebracket 321 is disposed in thesecond screw hole 3211b, and the plurality offirst screw holes 3211a are used for placing a plurality of nuts, thereby fixing thebase 3211 in thehousing 320 a. In the present embodiment, six first threadedholes 3211a are included in thebase 3211, and in some embodiments, four or other pluralities of first threadedholes 3211a may be provided in thebase 3211.

Referring to fig. 1, in the present embodiment, at least one stage, for example, two stages, such as afirst stage 325 and asecond stage 328, are disposed in thehousing 320a, thefirst stage 325 and thesecond stage 328 are fixed on the supportingplate 323, and thefirst stage 325 is located on thesecond stage 328. Thesupport plate 323 includes a main rod and two side plates respectively disposed at two ends of the main rod, and thefirst stage 325 and thesecond stage 328 are disposed between the two side plates. In this embodiment, the supportingplate 323 is further connected to acontrol rod 324, specifically, thecontrol rod 324 is connected to the main rod of the supportingplate 323, and one end of thecontrol rod 324 is further located outside thehousing 320a, and thecontrol rod 324 can drive the supportingplate 323 to ascend and/or descend. In this embodiment, thecontrol rod 324 is connected to a driving unit (not shown) for controlling thecontrol rod 324 to ascend and/or descend. When the driving unit controls thecontrol lever 324 to descend, thesecond stage 328 may contact thecooling plate 322.

Referring to fig. 4, in the present embodiment, at least one tray for placing a substrate can be placed on thefirst stage 325 and thesecond stage 328, for example, taking thefirst stage 325 as an example, at least onetray 3251, for example, two or three ormore trays 3251, can be placed on thefirst stage 325. Thetray 3251 may be formed from a variety of materials, including silicon carbide or graphite coated with silicon carbide. At least one substrate, which may include sapphire, silicon carbide, silicon, gallium nitride, diamond, lithium aluminate, zinc oxide, tungsten, copper, and/or aluminum gallium nitride, and which may also be soda lime glass and/or high silica glass, for example, may be disposed on thetray 3251. In general, the substrate may be composed of: materials with compatible lattice constants and thermal expansion coefficients, substrates compatible with the III-V materials grown thereon or substrates that are thermally stable and chemically temperature-set at III-V growth temperatures. In the present embodiment, the substrate is, for example, a silicon substrate or a silicon carbide substrate, and a metal compound thin film, for example, an aluminum nitride film or a gallium nitride film, for example, an (002) oriented aluminum nitride film, may be formed on the silicon substrate or the silicon carbide substrate. When a substrate is placed in thetransition chamber 320, the substrate is placed on thefirst stage 325, and when the substrate has completed all the corresponding processes, the substrate is placed on thesecond stage 328.

In some embodiments, a stage can be disposed within thetransition chamber 320, and at least one substrate can be disposed on the stage, and can be raised by the stage to be placed in the growth chamber, and after the substrate has been processed through all of the processes, the substrate can be placed on the stage, and lowered by the stage onto thecooling plate 322 to cool the substrate.

Referring to fig. 1, in the present embodiment, thetransition chamber 320 further includes a pumping port, the pumping port is connected to avacuum Pump 327, thetransition chamber 320 is pumped by thevacuum Pump 327, and the pumping process is realized by multiple steps, for example, a Dry Pump (Dry Pump) is used to Pump thetransition chamber 320 to 1 × 10^-2Pa, then pumping thetransition chamber 320 to 1 × 10 using a Turbo high vacuum Pump (Turbo Molecular Pump)^-4Pa or less than 1 × 10^-4Pa, when thetransition chamber 320 enters a vacuum state, thecontrol rod 324 drives thefirst stage 325 and thesecond stage 328 to move along a predetermined path, for example, thecontrol rod 324 drives the first stage to move upward. In this embodiment, thetransition chamber 320 is connected to a transfer chamber, a substrate handling robot in the transfer chamber transfers the substrate from thetransition chamber 320 to the transfer chamber, and then the substrate is transferred to another chamber by the substrate handling robot, such as a pre-heat chamber, a cleaning chamber or a growth chamber, and a thin film is formed on the surface of the substrate in the growth chamber, wherein the thin film may be made of one or more of aluminum oxide, hafnium oxide, titanium nitride, aluminum gallium nitride or gallium nitride. After the substrate finishes the film coating work,the substrate handling robot in the transfer chamber transfers the substrate to thesecond stage 328 in thetransition chamber 320, and thecontrol rod 324 drives thefirst stage 325 and thesecond stage 328 to move along a direction opposite to the predetermined path, such as downward, to contact thesecond stage 328 with thecooling plate 322, so that the substrate on thesecond stage 328 and thesecond stage 328 is cooled by thecooling plate 322. Meanwhile, an exhaust port is further arranged on one side of theshell 320a and connected with agas source 326, when thetransition cavity 320 is subjected to vacuum breaking treatment, thesecond carrying platform 328 is driven to be away from thecooling plate 322 through thecontrol rod 324, a preset distance is formed between thesecond carrying platform 328 and thecooling plate 322, the preset distance is 5-10mm for example, then nitrogen or argon is introduced into thetransition cavity 320 through the exhaust port through thegas source 326, thetransition cavity 320 is subjected to vacuum breaking treatment, and therefore cracks are prevented from being generated on the substrate due to introduction of nitrogen when the substrate is cooled. After thetransition chamber 320 is evacuated, the substrate can be removed for storage and analysis.

It should be noted that, when the substrate is placed in thetransition chamber 320, nitrogen or argon is first introduced into thetransition chamber 320 through the exhaust port, so that thetransition chamber 320 is balanced by atmospheric pressure, or the pressure in thetransition chamber 320 is greater than atmospheric pressure, thereby preventing contaminants from entering thetransition chamber 320 due to a negative pressure difference.

It is noted that the surface of the substrate, which may be 2 inches, 4 inches, 6 inches, 8 inches, or 12 inches in size, needs to be thoroughly cleaned before placing the substrate into thetransition chamber 320.

It is worth noting that in some embodiments, the semiconductor apparatus may also include, for example, a load lock chamber, a load lock cassette, and optionally additional MOCVD reaction chambers (not shown) for a number of applications.

In one embodiment, the substrate is selected from the group consisting of, but not limited to, sapphire, SiC, Si, diamond, L iAlO₂ZnO, W, Cu, GaN, AlGaN, AlN, soda lime/high silica glass, substrates with matched lattice constants and coefficients of thermal expansion, and nitrides grown on the substratesMaterial compatible substrates or substrates that are treated (engineered) according to the nitride material grown on the substrate, substrates that are thermally and chemically stable at the required nitride growth temperature, and unpatterned or patterned substrates. In one embodiment, the target material is selected from the group consisting of, but not limited to, Al-containing metals, alloys, and compounds, such as Al, AlN, AlGaN, and Al₂O₃And the target may be doped with group II/IV/VI elements to improve layer compatibility and device performance. In one embodiment, the sputtering process gas may include, but is not limited to, for example, N₂，NH₃，NO₂Nitrogen-containing gas such as NO and inert gas such as Ar, Ne, Kr and the like.

In some embodiments, the semiconductor devices may relate to devices and methods for forming high quality buffer layers and III-V layers that may be used to form possible semiconductor components, such as radio frequency components, power components, or other possible components.

Referring to fig. 5, the present embodiment further provides asemiconductor apparatus 300, wherein thesemiconductor apparatus 300 includes atransfer chamber 310, atransition chamber 320, acleaning chamber 330, a preheatingchamber 340 and a plurality ofgrowth chambers 350. Thetransition chamber 320, thecleaning chamber 330, the preheatingchamber 340 and the plurality ofgrowth chambers 350 are disposed on the sidewalls of thetransfer chamber 310, respectively.

Referring to fig. 5, in the present embodiment, thetransfer chamber 310 includes asubstrate handling robot 311, and thesubstrate handling robot 311 is operable to transfer substrates between thetransition chamber 320 and thegrowth chamber 350. More specifically, thesubstrate handling robot 311 may have dual substrate handling blades adapted to simultaneously transfer two substrates from one chamber to another. Substrates may be transferred between thetransfer chamber 310 and thedual growth chamber 350 via theslit valve 312. The movement of thesubstrate handling robot 311 may be controlled by a motor drive system (not shown), which may include a servo motor or a stepper motor.

Referring to fig. 5, in some embodiments, the semiconductor apparatus further comprises amanufacturing interface 313, wherein themanufacturing interface 313 comprises a cassette containing a substrate to be processed and a substrate handling robot (not shown) that may comprise a substrate planning system to load the substrate in the cassette into thetransition chamber 320, and in particular, to place the substrate on a tray of the stage. The substrate handling robot in themanufacturing interface 313 transfers the substrate into thetransition chamber 320, then thesubstrate handling robot 311 in thetransfer chamber 310 transfers the substrate into thetransfer chamber 310 through theslit valve 312, and then sequentially transfers the substrate into thecleaning chamber 330, the preheatingchamber 340, and thegrowth chamber 350. After a thin film is formed on the surface of the substrate, thesubstrate handling robot 311 transfers the substrate into thetransition chamber 320 and the substrate is removed by the substrate handling robot in themanufacturing interface 313.

In some embodiments of the present invention, appropriate control of the multi-chamber processing platform may be provided by a controller. The controller may be one of any form of general purpose data processing system that can be used in an industrial setting to control various sub-processors and sub-controllers. Typically, the controller includes a Central Processing Unit (CPU) that communicates with memory and input/output (I/O) circuitry among other common elements. As an embodiment, the controller may perform or otherwise initiate one or more of the operations of any of the methods/processes described herein. Any computer program code that performs and/or initiates these operations may be embodied as a computer program product. Each of the computer program products described herein may be executed from a computer readable medium (e.g., a floppy disk, a compact disk, a DVD, a hard drive, a random access memory, etc.).

The embodiment further provides a method for using a semiconductor device, including:

s1: placing the substrate on the tray;

s2: carrying out vacuum pumping treatment, and lifting the carrying platform to convey the substrate into the growth cavity so as to form a thin film on the substrate;

s3: and performing vacuum breaking treatment, wherein a preset distance is formed between the carrying platform and the cooling plate.

Referring to fig. 5, in step S1, a cassette containing substrates to be processed and a substrate handling robot (not shown) may be included in themanufacturing interface 313, and the substrate handling robot may include a substrate planning system to load the substrates in the cassette into thetransition chamber 320, specifically, to place the substrates on the trays of the first stage.

Referring to fig. 5, in step S2, after the substrate is placed on the tray of the first stage, thetransition chamber 320 is vacuumized, for example, thetransition chamber 320 is pumped to 1 × 10 by a dry pump^-2Pa, then pumping thetransition chamber 320 to 1 × 10 using a Turbo high vacuum Pump (Turbo Molecular Pump)^-4Pa or less than 1 × 10^-4Pa, when thetransition chamber 320 enters a vacuum state, thecontrol rod 324 drives thefirst stage 325 and thesecond stage 328 to move along a predetermined path, for example, thecontrol rod 324 drives the first stage to move upward. Thesubstrate handling robot 311 in thetransfer chamber 310 transfers the substrate from thetransition chamber 320 to thetransfer chamber 310, and thetransfer chamber 310 transfers the substrate to thecleaning chamber 330, the preheatingchamber 340 and thegrowth chamber 350 in sequence, so that one or more of aluminum oxide, hafnium oxide, titanium nitride, aluminum gallium nitride or gallium nitride may be formed on the surface of the substrate in thegrowth chamber 350. In this embodiment, substrates may be transferred between thefabrication interface 313 and thetransition chamber 320 through the slit valve, and between thetransition chamber 320 and thetransfer chamber 310 through theslit valve 312. The movement of thesubstrate handling robot 311 may be controlled by a motor drive system (not shown), which may include a servo motor or a stepper motor.

Referring to fig. 5, in step S3, after the substrate is finished being coated, thesubstrate handling robot 311 in thetransfer chamber 310 transfers the substrate into thetransition chamber 320, specifically, places the substrate on the second stage, the stage is then controlled by the joystick to move in the opposite direction to the predetermined path, e.g. the joystick controls the second stage to move downwards, the second carrying stage is contacted with a cooling plate, the second carrying stage and the substrate are cooled by the cooling plate, before the air-intake vacuum-breaking treatment, the second carrying platform is controlled to be away from the cooling plate to a preset distance, such as 5-10mm, then, nitrogen or argon is introduced into thetransition chamber 320 for vacuum breaking treatment to prevent the substrate from being cooled, the substrate is cracked due to the introduction of a large amount of nitrogen or argon, and then taken out by a substrate handling robot in the fabrication interface.

To sum up, the utility model provides a semiconductor device, this semiconductor device simple structure, the film homogeneity that obtains through this semiconductor device is high.

The above description is only a preferred embodiment of the present application and the explanation of the applied technical principle, and it should be understood by those skilled in the art that the scope of the present application is not limited to the technical solution of the specific combination of the above technical features, and also covers other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the inventive concept, for example, the technical solutions formed by mutually replacing the above technical features (but not limited to) having similar functions disclosed in the present application.

Besides the technical features described in the specification, other technical features are known to those skilled in the art, and further description of the other technical features is omitted here in order to highlight the innovative features of the present invention.

Claims (10)

1. A semiconductor device, comprising:

the transition cavity is arranged in front of the growth cavity;

at least one carrier arranged in the transition cavity, wherein the at least one carrier allows at least one tray to be placed, the tray allows a substrate to be placed, and the at least one carrier allows the at least one carrier to be lifted and/or lowered;

the cooling plate is arranged in the transition cavity and is opposite to the at least one carrying platform;

the air pumping port is arranged on one side of the transition cavity and used for vacuumizing the transition cavity;

and the exhaust port is arranged on one side of the transition cavity, and the transition cavity is subjected to vacuum breaking treatment through the exhaust port.

2. The semiconductor device according to claim 1, wherein: the semiconductor equipment comprises a first carrying platform and a second carrying platform, wherein the first carrying platform and the second carrying platform are connected to a supporting plate, the supporting plate is connected with a control rod, and one end of the control rod is located outside the transition cavity body.

3. The semiconductor device according to claim 2, wherein: the control rod drives the supporting plate to ascend and/or descend.

4. The semiconductor device according to claim 1, wherein: the cooling plate is fixed on the transition cavity through a plurality of brackets.

5. The semiconductor device according to claim 2, wherein: the second stage allows access to the cooling plate.

6. The semiconductor device according to claim 2, wherein: when the vacuuming treatment is performed, the control rod drives the support plate to move along a preset path.

7. The semiconductor device according to claim 2, wherein: when the vacuum processing is performed, the substrate is disposed on the first stage.

8. The semiconductor device according to claim 6, wherein: before the vacuum breaking treatment is carried out, the control rod drives the support plate to move along the direction opposite to the preset path.

9. The semiconductor device according to claim 7, wherein: and when the vacuum breaking treatment is carried out, a preset distance is reserved between the second carrying platform and the cooling plate.

10. The semiconductor device according to claim 1, further comprising:

a transport chamber, the growth chamber disposed on a sidewall of the transport chamber;

the preheating cavity is arranged on the side wall of the conveying cavity;

and the cleaning cavity is arranged on the side wall of the conveying cavity.

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