Utility model content
One aspect according to the present utility model provides a kind of reaction chamber, comprising: pedestal, it is to be processed for carryingWorkpiece；Target is arranged in the upper space of the reaction chamber；And collimator, it is arranged below the target, is described to be addedIn space more than work workpiece, to improve the coverage rate of the workpiece to be processed deep hole bottom and pair of deep hole sidewall coverageTitle property.
In some embodiments of the utility model, the collimator includes central area, intermediate region and fringe region；The central area, the intermediate region, the fringe region include multiple along the logical of reaction chamber sidewall direction extensionHole, the depth-to-width ratio of through-hole is center depth-to-width ratio in the central area, and the depth-to-width ratio of the through-hole in the intermediate region isIntermediate depth-to-width ratio, the depth-to-width ratio of the through-hole in the fringe region are edge depth-to-width ratio；Wherein, the intermediate depth-to-width ratio is greater thanAt least one of the center depth-to-width ratio and the edge depth-to-width ratio.
In some embodiments of the utility model, the intermediate depth-to-width ratio is greater than the center depth-to-width ratio, the centreDepth-to-width ratio is greater than the edge depth-to-width ratio.
In some embodiments of the utility model, the center depth-to-width ratio is identical as the edge depth-to-width ratio.
In some embodiments of the utility model, the intermediate depth-to-width ratio is than the center depth-to-width ratio and/or the sideEdge depth-to-width ratio is big by 15% or more.
In some embodiments of the utility model, the ratio of the center depth-to-width ratio and the edge depth-to-width ratio is greater than 2.
In some embodiments of the utility model, the central area, the intermediate region, the fringe region haveIdentical via area, and the via depth of the intermediate region is greater than the central area and the through-hole of the fringe region is deepDegree.
In some embodiments of the utility model, the central area, the intermediate region, the fringe region haveIdentical via depth, and the via area of the intermediate region is less than the through-hole face of the central area and the fringe regionProduct.
In some embodiments of the utility model, the reaction chamber further include: coil surround and is coupled in the collimationThe chamber side wall between device and the pedestal, wherein the coil is coupled to radio-frequency power supply.
In some embodiments of the utility model, the reaction chamber further include: upper liner, the upper liner is describedA part of chamber side wall, and the collimator is coupled to the upper liner；And faraday's liner, faraday's liner are also instituteA part of chamber side wall is stated, between the upper liner and the pedestal, and the coil is arranged in faraday's linerOutside.
In some embodiments of the utility model, faraday's liner, which suspends, to be arranged.
In some embodiments of the utility model, lining is provided at least one and cracks in the faraday, described to openSeam is axially arranged along faraday's liner.
In some embodiments of the utility model, the width that cracks is less than 10mm.
In some embodiments of the utility model, the central area and the fringe region are in reaction chamber cross sectionThe sum of projected area accounts for the collimator 60% or more of the reaction chamber cross sectional planes projection gross area.
In some embodiments of the utility model, the material of the collimator is aluminium or stainless steel.
Other side according to the present utility model provides a kind of semiconductor processing equipment, including any of the above-described instituteThe reaction chamber stated.
By the way that collimator is arranged, the film covering of the film deposition uniformity, deep hole bottom of workpiece to be processed can be improvedThe symmetry of rate and deep hole sidewall coverage, and film growth can be more precisely controlled in thin film deposition processes.
Specific embodiment
For the purpose of this utility model, technical solution and advantage is more clearly understood, below in conjunction with specific embodiment, andReferring to attached drawing, the utility model is described in further detail.
An embodiment of the present invention provides a kind of reaction chamber, as shown in Fig. 2, reaction chamber includes: chamber body1, pedestal 2, target 3 and collimator 4.
Pedestal 2 is set to the lower space of reaction chamber, specifically can be the bottom that chamber body 1 is arranged in, for holdingWorkpiece to be processed X is carried, and radio-frequency power is applied by radio-frequency power supply 22.The surrounding of workpiece to be processed X is additionally provided with pressure ring 21, usesIn the position of fixed workpiece to be processed X on the base 2.
Target 3 is arranged in the upper space of reaction chamber, specifically can be the top that chamber body 1 is arranged in.
Collimator 4 is arranged in the space of 3 or less target, workpiece to be processed X or more, using metals such as Al or stainless steelsMaterial is made.
Top electrode assembly 5 has can be set in reaction chamber top, and top electrode assembly 5 includes: magnetron 501, driving device502, support component 503 and plasma excitation source 504.
Target 3 is fixed in 503 bottom end of support component, and the lower surface of target 3 is exposed in the space of reaction cavity.Support component503 and target 3 form the sealed chamber for being suitable for accommodating deionized water 505, deionized water 505 is for cooling down target 3.MagneticKeyholed back plate 501 is located in the sealed chamber, and connects the driving device 502 outside sealed chamber.Magnetron 501 is in driving device 502Driving under scan target 3, to generate magnetic field near 3 surface of target.In technical process, plasma excitation source 504 is appliedIt is biased to target 3, so that it is formed negative pressure relative to the chamber body 1 of ground connection, makes the process gas of such as argon gas in reaction chamberBody discharges and generates argon ion and electronics.Magnetic field caused by magnetron 501 can extend the motion profile of electronics, electron motionIt constantly collides in the process with ar atmo, ionizes out a large amount of argon ion, the ionization level of target can be increased.Positively charged argon fromSon is attracted at the target 3 of back bias voltage.When the energy of argon ion is sufficiently high, target 3 is hit, metallic atom can be made to escape target3 surface of material and moving downward is deposited on workpiece to be processed X.
In conjunction with shown in Fig. 2 and 3, the collimator 4 of the present embodiment is set in chamber body 1 and close 1 top of chamber body,And each region of collimator 4 has different depth-to-width ratios.Collimator 4 and chamber body 1 are coaxial, are with 4 axis of collimatorCenter is divided into three regions: central area 41, intermediate region 42 and fringe region 43 from the center to edge.Central area41 cylindrical region to take 4 axis of collimator as its axis, intermediate region 42 and fringe region 43 are successively to be coated on centerCylindrical region outside region 41, intermediate region 42 is between central area 41 and fringe region 43.
Chamber body 1 includes side wall 11 and bottom wall 12.In conjunction with shown in Fig. 2 and Fig. 4, central area 41, intermediate region 42, sideEdge region 43 includes multiple through-holes 44 extended along sidewall direction, wherein sidewall direction refers to Z-direction shown in Fig. 2.Through-hole44 cross sectional shape without limitation, such as can be the shapes such as polygon or round.In Fig. 4, the section of through-hole 44 is positive sixSide shape, collimator 4 are in honeycomb structure.The depth-to-width ratio of multiple through-holes 44 in the same area be it is identical, depth-to-width ratio isRefer to that the depth of through-hole 44 and the ratio of width D, depth refer to that the length along sidewall direction, width D refer to perpendicular to sidewall directionLength.
The depth-to-width ratio of through-hole 44 is known as center depth-to-width ratio in central area 41, the deep width of the through-hole 44 in intermediate region 42Than being known as intermediate depth-to-width ratio, the depth-to-width ratio of the through-hole 44 in fringe region 43 is known as edge depth-to-width ratio.It is deep among the present embodimentWidth is than being greater than center depth-to-width ratio, and intermediate depth-to-width ratio is greater than edge depth-to-width ratio, i.e., intermediate depth-to-width ratio had not only been greater than center depth-to-width ratio, but alsoGreater than edge depth-to-width ratio.Center depth-to-width ratio is identical as edge depth-to-width ratio numerical value, i.e. central area and fringe region is having the sameDepth-to-width ratio, and intermediate depth-to-width ratio is bigger by 15% or more than center depth-to-width ratio and edge depth-to-width ratio, and center depth-to-width ratio and edge are deepThe ratio of wide ratio is all larger than 2.
The central area 41 of the collimator 4 of the present embodiment, intermediate region 42 and fringe region 43 and target 3 centerDomain, intermediate region and fringe region respectively correspond.In technical process, since the depth-to-width ratio of collimator intermediate region 42 is larger,When the metallic atom that 3 intermediate region of target generates passes through collimator 4, has more metallic atoms and be deposited in collimator 4.Although the metallic atom of 3 intermediate region of target generation in this way is more than its central area and fringe region, among collimatorMetallic atom quantity and its central area 41 that region 42 comes out and fringe region 43 it is essentially identical, do not have significant difference.Collimator 4 is equivalent to a filter, plays a role in filtering, to reduce the deposition velocity in section among workpiece to be processed X, subtractsThe film thickness of small workpiece to be processed intermediate region improves the uniformity of film deposition.
Meanwhile by be arranged collimator 4, make metallic atom after collimator 4 have good directionality, be incident on toThe metallic atom of workpieces processing X also has good directionality, so that metallic atom is easier to deposit to workpiece to be processed depthHole bottom, and more uniformly deposit to the two side walls of deep hole, to improve the film coverage and depth of deep hole bottomThe symmetry of hole sidewall coverage.The metallic atom that collimator 4 generates each region of target 3 carries out different degrees of filtering, risesTo the effect for reducing deposition rate, film growth can be more precisely controlled in thinner thin film deposition processes.Collimator 4Also increase the back bias voltage of pedestal 2, is conducive to improve film coverage.
In the present embodiment, central area 41, intermediate region 42, fringe region 43 can have identical via area,That is the cross-sectional area of the through-hole 44 of each region is equal.In this case, the depth of the through-hole 44 of intermediate region 42 should be bigIn central area 41 and the depth of the through-hole 44 of fringe region 43, wherein the through-hole 44 of central area 41 and fringe region 43 is deepDegree is 50mm or more.Central area 41, intermediate region 42, fringe region 43 also can have identical via depth.?In this case, the via area of intermediate region 42 should be less than the via area of central area 41 and fringe region 43.CollimatorCentral area 41, intermediate region 42 and fringe region 43 size can be arranged according to the size of target corresponding region, but inThe sum of the projected area on reaction chamber cross section (X/Y plane in Fig. 2) of heart district domain 41 and fringe region 43 should account for entire standardStraight device 4 projects 60% or more of the gross area in reaction chamber cross section.
Only exemplary illustration, the present embodiment are not limited to this above.For example, intermediate depth-to-width ratio can be greater than the deep width in centerThan with one of them in edge depth-to-width ratio, and intermediate depth-to-width ratio is bigger by 15% or more than center depth-to-width ratio or edge depth-to-width ratio, thisSample can also play the symmetrical of the uniformity of raising film deposition, the film coverage of deep hole bottom and deep hole sidewall coverageThe effect of property.In addition, when intermediate depth-to-width ratio is greater than center depth-to-width ratio and edge depth-to-width ratio, center depth-to-width ratio and edge depth-to-width ratioNumerical value can also be different, but still it is bigger by 15% or more than center depth-to-width ratio and edge depth-to-width ratio to meet intermediate depth-to-width ratio.
With continued reference to Fig. 2, the side wall 11 of chamber body 1 include: upper shell 111, lower shell 113 and be located at upper shellMiddle cylinder 112 between 111 and lower shell 113, middle cylinder 112 are insulating cylinder.
Reaction chamber further includes coil 6, and coil 6 surround and is coupled on the side wall 11 between collimator 4 and pedestal 2, whereinCoil 6 is coupled to radio-frequency power supply 7.
Specifically, coil 6 can be surrounded on the outside of middle cylinder 112, be wound by a circle or multiturn spiral coilIt is formed, and connects external radio-frequency power supply 7.Radio-frequency power supply 7 provides radio-frequency power, and the electromagnetic field that coil 6 generates is through middle cylinder112 are coupled in chamber body 1.Coil 6 is located at outside plasma environment, does not need individually to replace coil 6, reducesUse cost.
Upper shell 111, lower shell 113 using metal material simultaneously be grounded, middle cylinder 112 be insulating cylinder, can be used ceramics,The insulating materials such as quartz are made, as a part of chamber body 1, to realize the 1 good vacuum degree in inside of chamber body, andThe energy of electromagnetic field for issuing coil 6 is coupled in chamber body 1.
Reaction chamber further include: upper liner 131, faraday's liner 132 and lower liner 133.Upper liner 131 is side wall 11A part, and collimator 4 is coupled to liner.Collimator 4 can be integrally machined with upper liner 131, can also pass through companyFitting is suspended on liner 131.Faraday's liner 132 is also a part of side wall 11, be located at upper liner 131 and pedestal 2 itBetween, and the outside of faraday's liner 132 is arranged in coil 6.
Upper shell 111 is fixed on by adapter 14 in upper 131 top of liner, and 33 one end of lower liner is fixed by adapter 15In on lower shell 113, the other end extends to pedestal 2.Faraday's liner 132 between upper liner 131 and lower liner 133, andIt is corresponding with the position of middle cylinder 112 and coil 6.By the way that upper liner 131, faraday's liner 132 and lower liner 133 is arranged,Metallic atom when technique in chamber body 1 will deposit to above-mentioned interior lining, without depositing on the cylinder in outside, to haveEffect prevents cylinder contaminated, improves the service life of reaction chamber, reduces use cost.
Upper liner 131 and lower liner 133 are grounded by adapter, and faraday's liner 132 is set as floating potential, and passes throughThe insulating materials such as ceramics or quartz and the upper liner 131 and lower liner 133 of ground connection are completely cut off.As shown in figure 5, faraday's liner132 can be fixed on adapter 14 by the insulated column 16 of ceramic material, to be suspended on chamber body 1, make its electric potential floating.It is logicalIt crosses and is set as suspending by the current potential of faraday's liner 132, the more energy of coil 6 can be made to couple by faraday's liner 132Into in chamber body 1, energy coupling efficiency is further improved.
Meanwhile faraday's liner 132 issues coil 6 in order to prevent energy production eddy-current loss and fever, faradayAt least one is provided on liner 132 to crack, and is cracked along the axial setting of faraday's liner 132.As shown in figure 5, faraday's liner132, which are circumferentially placed with four, cracks 1321, and crack 1321 extends along Z-direction shown in Fig. 2, and faraday's liner is cracking at 1321It is fully disconnected, cracks and 1321 divide faraday's liner 132 for non-touching four blocks of plate.Above-mentioned whirlpool can be effectively prevented in this wayStream loss and fever, are operatively coupled to the energy of coil 6 in chamber body 1.
The quantity of cracking of faraday's liner 132 can also be fewer of more than four, and the width that cracks is less than 10mm.In faradayLining can also be grounded or connect electrical component and be at different potentials.
In conjunction with shown in Fig. 2 and Fig. 6, the coil 6, radio-frequency power supply 7 of the present embodiment constitute an auxiliary plasma driving source.WorkThe process gas of such as argon gas is passed through when skill in chamber body 1, except the plasma excitation source 504 of top electrode assembly can motivate workSkill gas generates outside plasma, and the energy that coil 6 issues is coupled to chamber body through middle cylinder 112, faraday's liner 132In 1, excitation argon gas generates the second plasma Ar+101.Under the back bias voltage effect of pedestal 2, the second plasma Ar+101 addThe film of speed bombardment workpiece to be processed X deep hole bottom, a part of metal M102 for keeping deep hole bottom deposited deposit to deep holeTwo side walls, which thereby enhance the coverage rate of deep hole side wall.
It can be seen that the utility model embodiment is by being arranged auxiliary plasma driving source and collimation in reaction chamberDevice, improves the symmetry of the coverage rate of deep hole side wall, the coverage rate of deep hole bottom, deep hole sidewall coverage, and improves thinThe uniformity of film deposition；And it is contaminated to effectively prevent insulating cylinder, improves the service life of reaction chamber, reduces useCost.
Another embodiment of the utility model provides a kind of semiconductor processing equipment, which splashes for magnetic controlPvd equipment is penetrated, can be used for the preparation of the sputter materials such as Cu, Ta, Ti, Al and film.Semiconductor processing equipment packetInclude the reaction chamber of an embodiment.
It should also be noted that, the direction term mentioned in embodiment, for example, "upper", "lower", "front", "rear", " left side "," right side " etc. is only the direction with reference to attached drawing, is not used to limit the protection scope of the utility model.Through attached drawing, identical memberElement is indicated by same or similar appended drawing reference.When may cause the understanding to the utility model and cause to obscure, will omitConventional structure or construction.
And the shape and size of each component do not reflect actual size and ratio in figure, and only the utility model are illustrated to implementThe content of example.In addition, in the claims, any reference symbol between parentheses should not be configured to claimLimitation.
It unless there are known entitled phase otherwise anticipates, the numerical parameter in this specification and appended claims is approximation, energyThe resulting required characteristic changing of content that enough bases pass through the utility model.Specifically, all be used in specification and rightThe number of content, reaction condition of composition etc. is indicated in it is required that, it is thus understood that be the term by " about " in all situationsIt is modified.Under normal circumstances, express meaning refer to comprising by specific quantity ± 10% variation in some embodiments,± 5% variation in some embodiments, ± 1% variation in some embodiments, in some embodiments ± 0.5% changeChange.
Furthermore word "comprising" does not exclude the presence of element or step not listed in the claims.It is located in front of the elementWord "a" or "an" does not exclude the presence of multiple such elements.
In addition, unless specifically described or the step of must sequentially occur, there is no restriction in the above institute for the sequence of above-mentioned stepsColumn, and can change or rearrange according to required design.And above-described embodiment can be based on the considerations of design and reliability, thatThis mix and match is used using or with other embodiments mix and match, i.e., the technical characteristic in different embodiments can be freely combinedForm more embodiments.
Similarly, it should be understood that in order to simplify the utility model and help to understand one in each utility model aspectOr it is multiple, in the description above to the exemplary embodiment of the utility model, each feature of the utility model is sometimes by oneIt rises and is grouped into single embodiment, figure or descriptions thereof.However, the method for the utility model should not be construed to insteadReflect following intention: the requires of the utility model i.e. claimed is more than feature expressly recited in each claimFeature.More precisely, as reflected in the following claims, being in terms of utility model practical less than frontAll features of novel single embodiment.Therefore, it then follows thus claims of specific embodiment are expressly incorporated in thisSpecific embodiment, wherein separate embodiments of each claim as the utility model itself.
Particular embodiments described above has carried out into one the purpose of this utility model, technical scheme and beneficial effectsStep is described in detail, it should be understood that the foregoing is merely specific embodiment of the utility model, are not limited to this realityWith novel, within the spirit and principle of the utility model, any modification, equivalent substitution, improvement and etc. done should all includeIt is within the protection scope of the utility model.