Silicon photrouics with superhydrophobic surface structureTechnical field
The utility model is related to photovoltaic cell fields, and in particular to a kind of silicon photovoltaic electric with superhydrophobic surface structurePond.
Background technology
Solar energy is regenerative resource, and cleanliness without any pollution, is universally acknowledged green energy resource.Photovoltaic cell is a kind ofUsing the photovoltaic effect of semi-conducting material, the device of electric energy is converted light energy into.It largely uses using silicon as substrate at presentSilicon photrouics.The advantages of photovoltaic cell, mainly has：Service life is long；Green non-pollution；Application field is wide；Specification size can be withDesign as needed；Most of all, theoretically every place for having sunlight can place photovoltaic cell.
Since Silicon photrouics are exposed in air for a long time, silicon face has drop attachment in sleet sky, and drop can be to siliconThe light intensity that surface receives impacts, and the chemical substance of corrosion silicon may be incorporated in drop, so to Silicon photrouicsIt is very necessary to carry out hydrophobic treatment.Current hydrophobic technique is concentrated mainly on surface coating and packaged glass, both sidesMethod is handled silicon itself, and the workload and cost of manufacture and maintenance are increased.
Utility model content
The utility model is to solve the existing hydrophobic technique of Silicon photrouics to be concentrated mainly on surface coating and packaged glass, is depositedThe workload and cost for increasing manufacture and maintenance the problems such as, a kind of silicon photovoltaic electric with superhydrophobic surface structure is providedPond.
Silicon photrouics with superhydrophobic surface structure, including silicon chip, gluing oxidant layer, TPT backboards, aluminum alloy frame and connectWire box；The upper surface of the gluing oxidant layer is adhesively fixed silicon chip, and the lower surface bonds of gluing oxidant layer fix TPT backboards；The TPTBackboard and terminal box are fixedly mounted in aluminum alloy frame, the silicon chip upper surface be super hydrophobic surface, the super hydrophobic surface byLaser interference lithographic system etching obtain micron-scale periodicity arrangement cone cylinder, it is described cone cylinder arrangement period be 3 μm~20μm。
Further, 0.3~0.6 μm of the diameter of the cone cylinder, 1~2 μm of height.
Further, the gluing oxidant layer is ethylene-vinyl acetate copolymer layer, and thickness is 0.5~1mm.
Further, the TPT back plate thickness is 0.3~0.4mm.
Further, the laser interference lithographic system be four beam laser interference lithography systems, including laser and thoroughlyMicroscope group, the light beam that laser is sent out through in lens group speculum and multiple half-reflecting half mirrors after treat etching silicon wafer carry out lightIt carves, the silicon chip after being etched.
The beneficial effects of the utility model：Silicon photrouics described in the utility model, silicon chip surface are by laser interferenceThe micron-scale periodicity structure that lithography system etches, and the period of the structure and height can be by changing systematic parameterIt is freely designed with the adjustment operating time, different demands can be met, hydrophobic angle can reach 150 ° or more.Laser interference lithographyThe microstructural stability that system etches is good, not easy to wear, can keep good hydrophobic property, and preparation section for a long timeSimply, quickly, cost can be effectively reduced applied to Silicon photrouics.
Description of the drawings
Fig. 1 is the structure chart of the Silicon photrouics described in the utility model with superhydrophobic surface structure；
Fig. 2 is four beam laser interference lithography system construction drawings；
Fig. 3 is the super hydrophobic surface of silicon chip in the Silicon photrouics described in the utility model with superhydrophobic surface structureFeature cross-section schematic diagram.
In figure：1, silicon chip, 2, gluing oxidant layer, 3, TPT backboards, 4, aluminum alloy frame, 5, terminal box, 6, laser, 7, lensGroup, 8, silicon chip to be etched.
Specific implementation mode
Specific implementation mode one illustrates present embodiment in conjunction with Fig. 1 and Fig. 2, the silicon photovoltaic with superhydrophobic surface structureBattery, including silicon chip 1, gluing oxidant layer 2, TPT backboards 3, aluminum alloy frame 4 and terminal box 5；
The upper surface of the gluing oxidant layer 2 is adhesively fixed silicon chip 1, and the lower surface bonds of gluing oxidant layer 2 fix TPT backboards 3；The TPT backboards 3 and terminal box 5 are fixedly mounted in aluminum alloy frame 4, and 1 upper surface of the silicon chip is super hydrophobic surface, described superThe cone cylinder for the micron-scale periodicity arrangement that hydrophobic surface is obtained by laser interference lithographic system etching, the arrangement week of the cone cylinderPhase is 3 μm~20 μm.
In present embodiment, the effect of silicon chip 1 is power generation, exactly converts light energy into electric energy；Gluing oxidant layer 2 is used for bondingFixed silicon chip 1 and TPT backboards 3；TPT backboards 3 play the role of sealing, insulation, waterproof；Aluminum alloy frame 4 is protection laminate, is risenCertain sealing, supporting role；Terminal box 5 protects entire electricity generation system, plays electric current transfer, the terminal box if component short circuitIt is automatic to disconnect, it prevents from burning out system.
Illustrate that present embodiment, the laser interference lithographic system are four beam laser interference lithography systems in conjunction with Fig. 2 and Fig. 3System, including laser 6 and lens group 7；The light beam that laser 6 is sent out through in lens group speculum and multiple half-reflecting half mirrors afterIt treats etching silicon wafer 8 and carries out photoetching, the silicon chip 1 after being etched.It etches to obtain by four beam laser interference nano lithography systemsSilicon chip 1 with superhydrophobic surface structure, surface texture pattern are the cone cylinders of periodic arrangement, bore the diameter 0.3 of cylinder~0.6 μm, 1~2 μm of height, which has fabulous hydrophobic property, hydrophobic angle to can reach 150 ° or more.
Gluing oxidant layer 2 described in present embodiment is ethylene-vinyl acetate copolymer layer (EVA), thickness is 0.5~1mm, 3 thickness of TPT backboards are 0.3~0.4mm.
The above descriptions are merely preferred embodiments of the present invention, not makees in any form to the utility modelLimitation；Any technical person familiar with the field, it is all available in the case where not departing from technical solutions of the utility model ambitThe methods and technical content of the disclosure above makes many possible changes and modifications to technical solutions of the utility model, or is revised asThe equivalent embodiment of equivalent variations.Therefore, every content without departing from technical solutions of the utility model, according to the utility modelTechnical spirit any simple modification, equivalent replacement, equivalence changes and modification made to the above embodiment, still fall within this practicalityThe range of new technique scheme protection.