LED display deviceTechnical field
The utility model is related to display technology field more particularly to a kind of LED display devices.
Background technology
LED (Light Emitting Diode, light emitting diode) belongs to one kind of semiconductor diode, mainly by PNKnot composition, has unilateral conduction, is the photoelectric cell that a kind of unilateral conduction by semiconductor PN shines, and shine originalIt manages and is：After LED plus forward voltage, it is injected into the hole in N areas from P areas and the electronics in P areas is injected by N areas, near PN junctionPhoton is generated while disappearance respectively with the electronics in N areas and the hole-recombination in P areas, electronics and hole in a few micrometers, that is, is generatedThe fluorescence of spontaneous radiation.Electronics and energy state (band gap) residing for hole are different in different semi-conducting materials.Electronics and skyThe amount that cave compound tense releases is different, and the energy of electronics and hole-recombination is bigger, and the energy of the photon of generation is bigger.The energy of photon is corresponding with the color of light in turn, since different materials has different band gap, so as to send differenceThe light of color.LED is a kind of solid state semiconductor devices, can realize that LED shines and shows.
Due to LED show have many advantages, such as small, brightness is high, power consumption is low, fever less, service life is long and environmental protection,And with colourful color category, thus receive the favor of consumer, can be used in stadiums, bank, card Securities,The advertising of the outdoor locations such as market can also be used as the electronics production that backlight needs backlight to show in mobile phone, television set etc.Indispensable effect is played in product.LED is shown on world wide and is widely used at present.The development prospect pole of LEDTo be wide, in terms of display performance towards more high brightness, more high weather resistance, higher luminous density, it is higher shineUniformity, reliability and panchromaticization direction are developed.
For the dot structure of existing LED display device there are many scheme, one of which is after individual particle LED is encapsulated, to lead toThe method for crossing binding is encapsulated formation array of display little module in assist side, and multiple modules then are spliced to form a scaleVery little LED display, the driving of LED are driven by the driving chip of circuit back, the gold on the electrode and wiring board of LEDThe driving chip electric interconnection at the through hole back side of categoryization；It is limited by the precision and LED lamp bead size of wiring board process technique, thisKind of scheme only can be used in the display of low resolution, and single Pixel Dimensions are in more than 1.2mm, and to by millions ofIts cost is also very high in the circuit board for LED lamp bead binding.
Second scheme is to be directly bound LED bare chips in the circuit board, then passes through the metallization on wiring boardThrough hole and driving chip electric interconnection, form array of display little module, then multiple modules are spliced to form to the LED for needing sizeDisplay screen, this technology are alternatively referred to as COB (chip on board, chip on board encapsulation) technology, and the driving of LED is to pass through lineThe driving chip driving of road back, a kind of relatively upper scheme of monitor resolution of this scheme are high.Single Pixel Dimensions existMore than 0.8mm, but with a kind of upper scheme there are similar problem, resolution ratio is relatively low, and if tying up millions of LED lamp beadsFixed its cost in the circuit board is also very high.
Also a kind of scheme is Micro LED (micro- LED) i.e. LED micros and matrixing technology, specifically, MicroLED refers to integrating the LED chip array of high density microsize on a display panel, and wherein each LED chip canAddressing and being operated alone is lighted, and the pixel distance of two adjacent LEDs chip can be reduced to micron order from grade, canTo improve display effect, meanwhile, Micro LED also have many advantages, such as that energy-efficient, resolution is high, small and slimming.
Micro LED are first to form drive substrate by large-scale semiconductor processing procedure on sized rectangular glass substrate, describedDrive substrate includes display area and peripheral circuit, wherein, display area is by the array that is formed with the pixel that electric current drives.In general, drive substrate processing procedure is realized by the polysilicon or sull switching device of large area.It is driven being formedAfter dynamic substrate, by be accurately positioned binding machine will for example millions of LED chip bondings in drive substrate, and make LEDThe electrode of chip forms electric interconnection with the electrode of the driving circuit device in drive substrate in vertical direction.
Usual Micro LED need the size range in a piece of display panel to be embedded in millions of LED, still, becauseThe epitaxial structure of LED usually requires the growth on substrate (such as Sapphire Substrate) and is transferred to drive substrate after completing peeling liner bottom againOn, especially for for the display panel that colored display is realized with red (R), green (G), blue (B) three primary colours, for formed this threeMaterial used in the LED of kind color is different, and the LED needs that different materials make are fabricated separately, and need first in different liningsDifferent epitaxial structures is formed on bottom, then is transferred to respectively in drive substrate, thus need by several times be transferred in drive substrate withThe corresponding position of RGB sub-pixel unit so that LED makes and the difficulty of shifting process increases, and hinders carrying for volume production efficiencyIt is high.In conclusion it stills need to improve for shifting and being tied to the method in drive substrate and being electrically connected LED.
Utility model content
The purpose of this utility model is to provide a kind of LED display device, the electrical connection of wherein LED and thin film transistor (TFT) compared withTo be simple, reliability is higher.
The utility model provides a kind of LED display device, and the display base is arranged on including display substrate and with plural numberDisplay unit on bottom, each display unit include one or more sub-pixels, and each sub-pixel includes driving areaDomain and non-driven region, which is characterized in that the drive area of the sub-pixel is provided with thin film transistor (TFT), in the sub-pixelNon-driven region set fluted, be provided with LED in the groove, the LED includes one first contact electrode, the filmTransistor contacts electrode connection with the first of the LED.
Optionally, the LED is described recessed away from the surface of the groove floor and the planes align at the slot openingThe depth bounds of slot is 20~150 microns.
Optionally, the LED display device further includes the first planarization layer and is formed on first planarization layerFirst electrode, first planarization layer cover the thin film transistor (TFT), the groove and the LED, the first electrodeIt is contacted by the first contact hole being arranged in first planarization layer with the thin film transistor (TFT), the first electrode is also logicalIt crosses the first of the second contact hole and LED being formed in first planarization layer and contacts electrode and contact.
In a kind of embodiment of the utility model, the LED also has the second contact electrode and substrate layer, and instituteIt states the first contact electrode and the second contact electrode is located at the homonymy of the substrate layer.
Optionally, the LED display device further includes the second planarization layer and is formed on second planarization layerSecond electrode, second planarization layer covers first planarization layer and the first electrode, the second electrode are led toIt crosses the 3rd contact hole being arranged in second planarization layer and the first planarization layer and contacts electrode company with the second of the LEDIt connects.
In another embodiment of the utility model, the LED also has the second contact electrode and substrate layer, andThe first contact electrode and the second contact electrode are located at the both sides of the substrate layer.
Optionally, be additionally provided with coating and second electrode, the coating cover the groove inner surface andThin film transistor (TFT), the second electrode are arranged on the cover surface of the bottom surface of the groove, and the second electrode and instituteState the second contact electrode contact of LED.
Compared with prior art, LED display device provided by the utility model, LED are arranged in display substrate and setOr in the groove formed, when LED is transferred in groove, complicated contraposition and binding technique is not required, transfer can be improvedEfficiency；Further, LED is conducive to LED and film crystal away from the surface of the groove and the planes align at slot openingPipe forms electric interconnection in same plane or closely located plane, and can enhance the reliability of electric interconnection；This practicalityIt is that electricity is formed by manufacture of semiconductor between pixel driver the device such as thin film transistor (TFT) and LED of new LED display deviceGas interconnects, and can enhance the uniformity and reliability of electric interconnection, and can improve production efficiency and reduce production cost.
Description of the drawings
Fig. 1 is the floor map of the part display unit of the LED display device of the utility model embodiment one.
Fig. 2 be the LED display device of the utility model embodiment two sub-pixel in Fig. 1 XX' directions section signalFigure.
Fig. 3 is the structure diagram of the first kind LED of the LED display device of the utility model embodiment two.
Fig. 4 is the structure diagram of the second class LED of the LED display device of the utility model embodiment three.
Fig. 5 be the LED display device of the utility model embodiment three sub-pixel in Fig. 1 XX' directions section signalFigure.
Fig. 6 is the flow diagram of the manufacturing method of the LED display device of the utility model embodiment four.
Reference sign：
100-LED display devices；110- display units；11- pixel-driving circuits；101st, 301- shows substrate；111、311- sub-pixels；10-LED；20- first kind LED；200th, 311- substrate layers；201-LED buffer layers；202-N type semiconductor layers；203- quantum well layers；204-P type semiconductor layers；The second classes of 30- LED；312- metal bonding layers；313- metal mirror layers；314- contact layers；315- epitaxial layers；105th, the first planarization layers of 306-；The first contact holes of 1-；The second contact holes of 2-；3- the 3rd connectsContact hole；210th, 310- first contacts electrode；106th, 306- first electrodes；The second planarization layers of 107-；108th, 308- second electrodes；220th, 320- second contacts electrode；150th, 350- grooves；102nd, 302- buffer layers；120th, 320- active layers；130th, 330- grid electricityPole；140a, 340a- source electrode；140b, 340b- drain electrode；103rd, 303- gate insulators；104- interlayer insulating films；109、309- dike layers；305- coatings.
Specific embodiment
The LED display device and its manufacturing method of the utility model are made below in conjunction with the drawings and specific embodiments furtherIt is described in detail.According to following explanation and claims, will be become apparent from feature the advantages of the utility model.It should be notedBe, attached drawing using very simplified form and using non-accurate ratio, only to it is convenient, lucidly aid in illustrating this realityWith the purpose of new embodiment.
Term " first " " second " in the specification and in the claims etc. is used between similar element distinguish,And it is not necessarily for describing certain order or time sequencing.It is appreciated that in the appropriate case, these terms so used can replaceIt changes, such as may be such that the utility model embodiment as described herein can be different from other orders as described herein or shown and comeOperation.Similar, if method described herein includes series of steps, and the order of these steps presented herein is notMust be the unique order that can perform these steps, and the step described in some can be omitted and/or some are not described hereOther steps can be added to this method.If the component of the embodiment of the utility model and the component phase in other icons in figureTogether, although can all recognize these components easily in all figures, in order to make the explanation of icon apparent, this specification is notThe label of all identical components can be marked in each figure.
Embodiment one
Fig. 1 is the floor map of the part display unit 110 of the LED display device 100 of the present embodiment.As shown in Figure 1,LED display device 100 includes display substrate 101 and is arranged on the display unit in display substrate 101 with plural number in the present embodiment110.Each display unit 110 includes three sub-pixels 111, includes drive area and non-driven region in each sub-pixel 111,Wherein, set in the non-driven region of sub-pixel 111 there are one LED10, and in drive area, it sets or is formed with for drivingThe pixel-driving circuit 11 of LED10.
Display unit 110 described in the present embodiment refers to being used for for the minimum set in LED display device 100The recurring unit of image is shown, certainly, it will be appreciated by those skilled in the art that can also be set in a LED display device 100Put one or more kinds of recurring unit i.e. display units 110 for being used for showing image, the spacing between display unit 110 is for example smallIn 100 microns, the spacing is related with the precision of manufacturing equipment and the resolution ratio of LED display device 100.In addition, this fieldTechnical staff is also understood that in same display unit 110, can include one or more sub-pixels 111, such as in monochromeIn LED display device, a display unit 110 can only include a pixel (being equal to sub-pixel 111), and in polychrome or coloured silkIn color LED display device, multiple sub-pixels 111 can be included in a display unit 110, the multiple sub-pixel 111 can be withIt is respectively intended to that LED display device is made to show such as three primary colours --- red (R), green (G), blue (B) or other colorsLight, and multiple sub-pixels 111 in same display unit 110, although being illustrated as identical shape and rule row in Fig. 1Cloth, it will be understood by those skilled in the art, however, that the shape of many a sub-pixels 111 of the utility model LED display device 100Shape and arrangement mode can not also be same.
In the present embodiment, multiple display units 110 of LED display device 100 be in display substrate 101 it is parallel to each other simultaneouslyAnd equally distributed rows and columns distribution, in other embodiments, multiple display units 110 can also be with other regularityOr non-regularity is arranged in display substrate 101, and what is formed can also be ranks not parallel mutually.
In the present embodiment LED display device 100 further include be configured to apply a signal to it is multiple in display unit 110The driver (not shown) of sub-pixel 111, driver is for example, by scanner driver and data driver and each sub-pixel listMember 111 is used for that the pixel-driving circuit 11 of LED10 is driven to connect.Wherein, scanner driver is configured to scanning signal and is applied toThe scan line (or grid line, such as G1, G2, G3, G4... in Fig. 1) being connected with the sub-pixel 111 in display unit 110, data are drivenDynamic device be configured to data-signal being applied to be connected with the sub-pixel 111 in display unit 110 data cable (D1 in such as Fig. 1,D2、D3、D4、...).Driver can be located at the non-display area of LED display device, and driver can be with IC chipForm sets or is formed and can be directly mounted in the display substrate 101 for setting or being formed with display unit 110 thereon, can installedOn flexible printed circuit film, display substrate 101 can be attached in the form of carrier package part (TCP) or can directly be setIt puts or is formed in display substrate 101.As shown in Figure 1, driver can control each with the independent addressing of the mode of scanningLED10 in sub-pixel 111 inputs driving current so that LED10 to the LED10 being correspondingly arranged in different display units 110It shines, when the LED10 being arranged in different sub-pixels 111 is with each independently or by colored filter (or color converting layer)The light of RGB three primary colours is sent, colored display, but the mistake of the colored display can then be realized by driver control display deviceJourney is not limited thereto, such as can also be different by the luminescent color of the difference LED10 of driving current.
Pixel-driving circuit 11 in the present embodiment sets or is formed at the display substrate in each 111 region of sub-pixelIt is connected in 101 and with the LED10 in same sub-pixel 111, for other setting signals independent or with LED display device 100LED10's in co- controlling sub-pixel 111 shines, and a such as thin film transistor (TFT) is included at least in pixel-driving circuit 11(TFT) active parts, in another embodiment of the utility model, pixel-driving circuit 11 can include such as two film crystalline substancesBody pipe and a capacitance (2T1C structures), so that shut-off that the LED in sub-pixel 111 shines and brightness is preferably controlled to keepEtc. characteristics, but the utility model is without being limited thereto.
Wherein, show that substrate 101 is referred to for making the substrate to form display unit 110 on it in the present embodiment,Display substrate 101 can be flexible (flexible) substrate or rigidity (rigid) substrate, alternatively, it is also possible to be transparent modelingExpect (plastic) substrate or glass substrate etc..For example, display substrate 101 may include that main component is the transparent of silicaGlass material or display substrate 101 are that flexible base board is, for example, makrolon (polycarbonate, PC) substrate, polyester(polyester, PET) substrate, cyclenes copolymer (cyclic olefin copolymer, COC) substrate or metal complexesMaterial-cyclenes copolymer (metallocene-based cyclic olefin copolymer, mCOC) substrate, but show substrate101 can be not limited to listed type.
In the present embodiment, LED display device 100 can be directed towards display substrate 101 to the outside of LED display device 100The bottom emitting type of light extraction.In bottom emitting type display device, display substrate 101 includes transparent material or by transparent material shapeInto.In another embodiment, LED display device 100 can be the top emitting along the light-emitting directions separate with display substrate 101Type, in top emission type display device, display substrate 101 by not formed transparent material or not, it may include such as metal it is nontransparentMaterial.
Embodiment two
Fig. 2 is the diagrammatic cross-section in the XX' directions in Fig. 1 of sub-pixel 111 of the LED display device 100 of embodiment two.ThisEmbodiment combination Fig. 1 and Fig. 2 carries out a sub-pixel 111 in any one display unit 110 of LED display device 100Description.It will be appreciated by those skilled in the art that in same display unit 110, it can set or be formed and is one or more identicalOr similar sub-pixel 111, by forming or setting the same or similar display unit 110 of plural number in display substrate 101, withAnd set driver that may finally form LED display device 100 to drive the display unit 110.According to following to a sonThe description of pixel 111, the LED display device 100 on the utility model will be apparent from.
As shown in Fig. 2, in the range of sub-pixel 111, including display substrate 101, the drive area in display substrate 101Thin film transistor (TFT), also, in the range of sub-pixel 111 be not provided with or be not formed the non-driven region of thin film transistor (TFT), ifFluted 150 are put or are formed, the groove 150 runs through the multilayer formed in display substrate 101, the present embodiment further groove 150Bottom is located in display substrate 101, and first kind LED20 is arranged in groove 150, the first contact electrode 210 of first kind LED20It is contacted with first electrode 106, the second contact electrode 220 of first kind LED20 is contacted with second electrode 108.Sub-pixel 111 also wrapsInclude the first planarization layer 105 on the thin film transistor (TFT), on the first planarization layer 105 by the first contact hole 1 with it is thinFilm transistor connects and contacts the first electrode 106 of the contact of electrode 210 with first by the second contact hole 2, positioned at the first electricitySecond planarization layer 107 of the top of 106 and first planarization layer of pole 105 and pass through the 3rd on the second planarization layer 105The second electrode 108 that contact hole 3 contacts the contact of electrode 220 with second.
Buffer layer 102 be may be provided at or be formed in display substrate 101.Buffer layer 102 can be on the top of display substrate 101Place provides flat surface, and can stop foreign substance or moisture infiltration through display substrate 101.In certain embodiments,Buffer layer 102 may include the inorganic of such as silica, silicon nitride, silicon oxynitride, aluminium oxide, aluminium nitride, titanium oxide or titanium nitrideThe organic material of material and/or such as polyimides, polyester or acrylic, and may include above-mentioned multiple material stacked body orIt is formed using the stacked body of above-mentioned multiple material.
Thin film transistor (TFT) may include active layer 120, gate electrode 130, source electrode 140a and drain electrode 140b.
Hereinafter, the setting of wherein active layer 120, gate electrode 130, source electrode 140a and drain electrode 140b orders will be describedOr it is formed as the thin film transistor (TFT) of top-gated polar form.However, the utility model is without being limited thereto, such as bottom gate polar form can also be usedVarious types of thin film transistor (TFT)s.
Active layer 120 may include semi-conducting material, such as non-crystalline silicon or polysilicon, however, the utility model is without being limited thereto,Active layer 120 may include a variety of materials, and in certain embodiments, active layer may include organic semiconducting materials etc..
In certain embodiments, active layer may include oxide semiconductor material, for example, active layer may include from such asZinc, indium, gallium, tin, cadmium and germanium 12 race's metallic elements, 13 race's metallic elements and 14 race's metallic elements and combinations thereof in the material that selectsThe oxide of material.
Gate insulator 103 be may be provided at or be formed on active layer 120.Gate insulator 103 makes gate electrode 130 with havingActive layer 120 insulate.Gate insulator 103 can be the inorganic materials for including such as silica and/or silicon nitride individual layer orMultilayer.
Gate electrode 130 be may be provided at or be formed on gate insulator 103.Gate electrode 130 may be connected to display unit 110Gate line (not shown), wherein, via the gate line to thin film transistor (TFT) TFT apply conduction and cut-off signal.
Gate electrode 130 may include the metal material of rather low resistance.Adherency in view of adjacent layer, the layer that will stackSurface flatness and can processing type etc., gate electrode 130 may be configured as or be formed as including for example aluminium, platinum, palladium, silver, magnesium, gold, nickel,The single-layer or multi-layer of at least one of neodymium, iridium, chromium, lithium, calcium, molybdenum, titanium, tungsten and copper.
Interlayer insulating film 104 be may be provided at or be formed on gate electrode 130.Interlayer insulating film 104 make source electrode 140a andEach and gate electrode 130 in drain electrode 140b insulate.Interlayer insulating film 104 may be configured as or be formed as including inorganic materialSingle-layer or multi-layer.In a preferred embodiment, for example, inorganic material can be metal oxide or metal nitride.In other realitiesIt applies in example, inorganic material may include silica, silicon nitride, silicon oxynitride, aluminium oxide, titanium oxide, tantalum oxide, hafnium oxide or oxidationZirconium etc..
Source electrode 140a and drain electrode 140b be may be provided at or are formed on interlayer insulating film 104.Source electrode 140a and leakageElectrode 140b may be configured as or be formed as including aluminium, platinum, palladium, silver, magnesium, gold, nickel, neodymium, iridium, chromium, lithium, calcium, molybdenum, titanium, tungsten and copperAt least one of single-layer or multi-layer.Source electrode 140a and drain electrode 140b is each electrically coupled to the source region of active layer 120And drain region.
It should be noted that in same sub-pixel 111, more than one thin film transistor (TFT) can be formed, it can also be viaSuch as the drive area for overlapping on sub-pixel 111 of above-mentioned functional layer forms one or more capacitances, multiple thin film transistor (TFT)s andCapacitance can connect according to certain Functional Design and form the pixel-driving circuit 11 in 111 region of sub-pixel, subsequently throughIt is connected with the electrode of first kind LED20 so as to fulfill the Active control to first kind LED20, but the utility model is without being limited thereto.
First kind LED20 is arranged at the non-driven region in sub-pixel 111, refers in particular to be not provided with or does not form film crystalline substanceThe region of body pipe, in the present embodiment, the non-driven region that first kind LED20 is arranged in the range of sub-pixel 111 sets or is formedGroove 150 in.In preferred embodiment, in same sub-pixel 111, a groove 150 is set or formed, is set in groove 150Put a first kind LED20.
Groove 150 can be formed after source electrode 140a and drain electrode 140b is formed by etch process, groove 150Shape can be considered to adjust etching according to the size of first kind LED20 and convenience for placing first kind LED20 etc.Condition.Groove 150 can also etch to be formed after planarization layer 105 is formed again.
In the present embodiment, the depth of groove 150 is close with the height of first kind LED20, the first kind in the present embodimentThe thickness range of LED20 is 10~140 microns (μm), and the depth bounds of groove 150 is 20~150 microns.It is recessed in the present embodimentRectangular cross-section of the slot 150 in the direction parallel to display substrate 101, groove 150 is perpendicular to the direction of display substrate 101On section also for rectangle, i.e. one side's trap of the likeness in form of groove 150.In the present embodiment, the depth of groove 150 is 100 microns, and length is100 microns, width is 40 microns, and groove 150 is through interlayer insulating film 104, gate insulator 103, buffer layer 102 and displayA part for substrate 101, the bottom of groove 150 are located in display substrate 101.
First kind LED20 is that laterally (lateral) structure, the LED that Fig. 3 show the present embodiment show and set in the present embodimentThe structure diagram of standby first kind LED20.As shown in figure 3, in the present embodiment first kind LED20 include substrate layer 200 andLED buffer layers 201, n type semiconductor layer 202, quantum well layer 203 and the p type semiconductor layer sequentially formed on substrate layer 200204.In the present embodiment, the first contact electrode 210 and the second contact electrode 220 are also formed on first kind LED20, wherein, theOne contact electrode 210 sets or is formed in 204 surface of p type semiconductor layer, and the second contact electrode 220 sets or be formed in N-type202 surface of semiconductor layer.First contact electrode 210 and second contacts electrode 220 and is located at the same side of substrate layer 200, and can wrapOne or more layers are included, and the various conductive materials for including metal, conductive oxide and conducting polymer can be used to be formed.During using the orientation of substrate layer 200 as lower section, the first contact electrode 210 is higher than the second contact electrode 220, but the utility model is notIt is limited to this.
Wherein, substrate layer 200 is usually sapphire, silicon or carbofrax material, and such as metal organic-matter chemical can be usedThe mode of vapor deposition (MOCVD) forms the multilayered structure of the first kind LED20, the utility model pair on substrate layer 200The manufacturing process of first kind LED20 does not limit, and first kind LED20 can be formed using current technique.
First kind LED20 can emit light with ultraviolet wavelength or with red (R), green (G), blue (B) colorLight, and can realize white light by using fluorescent material, mixing colored light.First kind LED20 can be micro- LED, here, micro-LED can represent about 1 micron of LED to about 100 micron-scales, but the present embodiment is not limited to this, first in the present embodimentClass LED20 can also be the big or small LED of the size of the micro- LED of size ratio.It is arranged at it should be noted that working as in groove 150First kind LED20 sizes are smaller, set so that its height on 200 direction of substrate layer is less than in display substrate 101The interlayer insulating film 104 putting or formed, gate insulator 103, buffer layer 102 one or more layers thickness when, then settingWhen putting or forming groove 150, the bottom surface of groove 150 can also be located at 101 top of display substrate and positioned at interlayer insulating film 104,Gate insulator 103, the wherein layer of surface in 102 or first planarization layer 105 of buffer layer or inside.
In the present embodiment, in order to increase subsequently when forming electrode interconnection to pixel-driving circuit 11 and first kind LED20,It improves the area of electrode contact and reduces the complexity of electrode interconnection, the first contact electrode 210 and second of first kind LED20 connectsTouched electrode 220 can be strip on the direction parallel to substrate layer 200, also, in order to avoid due to first kind LED20'sClear-cut margin causes the metallic film of electrode interconnection to be broken and first kind LED20 is avoided to be placed on groove 150 when in groove 150Cavity formed below, first kind LED20 is trapezoidal perpendicular to the section in 200 direction of substrate layer in the present embodiment, as shown in figure 3,The angle ɑ of the trapezoidal side and top is obtuse angle, and the angular range of ɑ is, for example, 120~160 degree.In other embodimentIn, LED10 can also be rectangle perpendicular to the section of substrate layer 200, in the cross-wise direction parallel to substrate layer 200, firstClass LED20 can also be the shapes such as circle, ellipse, and the first contact electrode 210 and second contacts electrode 220 parallel to substrateCan also be circle, diamond shape etc. on the direction of layer 200, but in the utility model first kind LED20 shape and size not officeIt is limited to features described above.
First kind LED20 transfers are tied to groove 150 may include the steps：First by first kind LED20 with exampleMode such as laser lift-off is removed from substrate layer 200；Then the first contact contact electrode 220 of electrode 210 and second is not being includedOne or more surfaces coat binding agent (not shown)；Then first kind LED20 is adsorbed in a transfer equipment (not shown)On, it can be designed on transfer equipment with the adsorption element that arrangement is corresponded with the groove 150 being distributed in LED display device 100,So that once the first kind LED20 of multiple adjacent positions can be transferred in groove 150；Then by transfer equipment by firstIn class LED20 transfer grooves 150, the binding agent on first kind LED20 surfaces is contacted with the bottom of groove 150 and/or side wall, is passed throughFirst kind LED20 is bundled in groove 150 after curing.In preferred embodiment, after first kind LED20 is tied in groove 150,Groove 150 is filled up by first kind LED20 and binding agent.
In the present embodiment, after first kind LED20 is bound in groove 150, first kind LED20 is carried on the back with display substrate 101From surface specifically such as first contact electrode 210 surface, be substantially flush with the surface of source electrode 140a and drain electrode 140b,In a preferred embodiment, the difference in height of the two is less than 5 microns.
It should be noted that the first contact electrode 210 and second contacts electrode 220 in first kind LED20 in the present embodimentIt has just been formed before being transferred to groove 150, in other one or more embodiments of the utility model, the first contact electrode210 and second contact the advantages of electrode 220 can also be re-formed, so done after first kind LED20 is fixed on groove 150It is, on the one hand, the first contact 210 He of electrode is for example formed with light shield technique on the first kind LED20 being bound in groove 150Electrode 220 is contacted to the first contact electrode 210 and second during the second contact electrode 220, in light shield technical process and carries out light shield pairPosition technique is referred to the alignment mark set during thin film transistor (TFT) is formed in display substrate 101 and on each layer,Thus, subsequently contacting electrode 210 and second in first electrode 106, second electrode 108, first contacts electrode 220 and thinWhen film transistor carries out electrode interconnection, the behaviour due to being formed when shifting and be bundled in groove 150 by first kind LED20 can be reducedMake error, thus craft precision can be improved；On the other hand, the first contact contact electricity of electrode 210 and second of first kind LED20Pole 220 can also be formed with source electrode 140a and drain electrode 140b in the same process, for example, by wet etching in the source that formed electricityWhile pole 140a, drain electrode 140b, the first contact electrode 210 and second contact electrode 220, retain the first contact electrode 210It is connected with drain electrode 140b, then can realize that P-type electrode interconnects.It should be noted that in this scheme, in order to ensure grooveDrain electrode 140b outside 150 contacts electrode 210 with first of first kind LED20 in groove 150 and is electrically connected, groove 150 andGap between a kind of LED20 is answered as small as possible and has preferably been efficiently filled, in addition can be by increasing by 150 top of grooveMetal layer thickness at edge is interrupted to avoid the electrical connection between the first contact electrode 210 and drain electrode 140b.
First planarization layer 105 may be provided at or be formed in the first kind LED20 in thin film transistor (TFT) and groove 150On.First planarization layer 105 may be configured as or be formed as cover film transistor and first kind LED20 and groove 150, so as toIt solves due to level error (step difference) caused by thin film transistor (TFT), groove 150 and first kind LED20, the first planarization layer 105Gap that may be present between groove 150 and first kind LED20 can also be filled.First planarization layer 105 may be configured as or shapeAs the single-layer or multi-layer including organic material.Organic material may include such as polymethyl methacrylate (PMMA) or polyphenyl secondThe polymers for general use of alkene (PS), polymer derivant, acrylic polymer, acid imide polymer, the aryl oxide with phenolic groupType of Collective object, acylamide polymer, fluorine-based polymer, paraxylene Type of Collective object, vinyl alcohol polymer or theirs is mixedObject etc. is closed, selectively, the first planarization layer 105 can be set by the compound stacked body of inorganic insulation layer and organic insulatorOr it is formed.
First electrode 106 is formed on the first planarization layer 105, and first electrode 106 can be connected electrically to film crystalline substanceBody pipe, and contact electrode 210 with first and contact.In the present embodiment, first electrode 106 can be by being limited to or being formed in firstThe first contact hole 1 in planarization layer 105 is contacted with drain electrode 140b, and first electrode 106 can be by being limited to or being formedThe second contact hole 2 in the first planarization layer 105 contacts electrode 210 with first and contacts, that is, realizes thin film transistor (TFT) andThe electric connection of one contact electrode 210.First electrode 106 can have various flat shapes.In preferred embodiment, first electrode 106It can set or be formed by being patterned into discrete island-like shape.
Second planarization layer 107 is formed on the first planarization layer 105 and first electrode 106, and is set or formedSo that the second planarization layer 107 covers first electrode 106, the second planarization layer 107 can utilize identical with the first planarization layer 105Deposition method and material formed, but the utility model is not limited to this.
Second electrode 108 is located on the second planarization layer 107, and second electrode 108 can be connected electrically to first kind LED20The second contact electrode 220, in the present embodiment, second electrode 108 can be by being limited to or being formed in 107 He of the second planarization layerFirst planarization layer 105, the 3rd contact hole 3 not being overlapped with the first contact hole 1 and the second contact hole 2 contact electrode with second220 contacts.
It should be noted that in other one or more embodiments of the utility model, the first contact electrode 210 and theTwo contact electrodes 220 can be formed with source electrode 140a, the drain electrode 140b in thin film transistor (TFT) in the same process, and sameWhen form the first contact electrode 210 and drain electrode 140b and both make physical connection (realizing electrical connection) in the case of,The first planarization layer 105, the first contact hole 1, the second contact hole 2 and the first electrode involved in the present embodiment need not then be made106, and above-mentioned second planarization layer 107, the 3rd contact hole 3 and second electrode 108 need to be only formed, so as to the second contact electrode220 contact with second electrode 108.
Limiting the dike layer 109 of sub-pixel 111 can set or be formed on the second planarization layer 107, and dike layer 109 can limit itIn accommodate 111 scope of sub-pixel of thin film transistor (TFT) and groove 150.Dike layer 109 may include for example to be limited by its side wall or shapeInto one or more layers composition of 111 scope of sub-pixel.Its total height can be according to field angle (the angle of of first kind LED20Field) determine.The specific size of sub-pixel 111 can be according to the resolution ratio of LED display device 100 and picture element density etc. come reallyFixed, the shape of pixel region can be as shown in Figure 1 square, can also have polygon, circle, ellipse, triangle etc.Various flat shapes.Second electrode 108 can be set or be formed on dike layer 109, second electrode 108 can set or be formed as along withThe direction that the data cable or scan line of sub-pixel 111 are parallel extends, but the utility model is without being limited thereto.In its of the utility modelIn his one or more embodiments, second electrode 108 can also be formed before dike layer 109, second electrode 108 can also be coveredThe top of the entire display substrate 100 of lid is used as multiple 111 common common electrodes of sub-pixel.
Dike layer 109 may include the material, light reflecting material or the light-scattering material that absorb at least a portion light, can also includeIt is translucent or opaque insulating materials to visible ray (such as the light of wavelength in the range of 380~750nm).
For example, dike layer 109 may include such as polycarbonate (PC), polyethylene terephthalate (PET), polyether sulfone,Polyphenylene oxide, polyamide, polyetherimide, the thermoplastic resin of methacrylic resin or cyclopolyolefin system resin, such as epoxyResin, phenol resin, polyurethane resin, acryl resin, vinylester resin, acid imide resin, polyurethane based resin, urea treeThe thermosetting resin or such as organic insulation of polystyrene, polyacrylonitrile or PC of fat or melmac, but notIt is limited to this.
As another example, dike layer 109 may include such as silica, silicon nitride, silicon oxynitride, aluminium oxide, titanium oxide, oxygenChange tantalum or the inorganic oxide of zinc oxide or the inorganic insulating material of inorganic nitride.But not limited to this.Dike layer 109 can wrapInclude the opaque material such as black-matrix material.
Black-matrix material may include organic resin, resin or cream comprising glass cream and black pigment, such as Ni, Al,The metallic particles of Mo or their alloy, metal oxide particle (such as chromium oxide) or metal nitride particles (such as nitrogenChange chromium) etc..In another embodiment, dike layer 109 can be the distributed Bragg reflector for having relatively high reflectivity(DBR) or the mirror reflector including metal (mirror reflector).
In the present embodiment, on the one hand, by the way that first kind LED20 to be arranged to the sub-pixel 111 in LED display device 100In the range of the non-driven region groove 150 that sets or formed in, individually millions of LED chips need not be carried out complicatedBinding technique, the transfer efficiency of first kind LED20 can be improved；On the other hand, the first kind LED20 and thin film transistor (TFT)Electrical connection be to be realized by manufacture of semiconductor, the uniformity and reliability of electrical connection can be enhanced.
Embodiment three
The present embodiment mainly describes to set the situation of in addition one kind LED such as vertical LEDs in groove 150.Fig. 4 is to implementThe structure diagram of second class LED30 of the LED display device of example three.Fig. 5 is the son of the LED display device 100 of embodiment threeThe diagrammatic cross-section in the XX' directions in Fig. 1 of pixel 311.The part component identical with one and two function of embodiment employs in Fig. 5The number different from Fig. 1 and Fig. 2.
As shown in figure 4, the second class LED30 in the present embodiment is vertical LED, including the sequentially connected first contact electrode310th, substrate layer 311, metal bonding layer 312, metal mirror layer 313, contact layer 314, the contact electricity of epitaxial layer 315 and secondPole 320.Wherein, the first contact electrode 310 and second contacts electrode 320 respectively positioned at the two of the second class LED30 epitaxial layers 311Side (and both sides of substrate layer 311).
The preparation process of second class LED30 for example includes the following steps：First in such as Grown on Sapphire Substrates extensionLayer 315；Then contact layer 314 and metal reflective mirror layer 313 are made on epitaxial layer 315, metal reflective mirror layer 313 can also be withBragg mirror (DBR) structure division or replacing whole；Then using the side of plating or substrate bonding (Wafer bonding)Formula makes the good bonded substrate, that is, substrate layer 311 of heat conductivility, while also serves as the new substrate of GaN base epitaxial layer 306；Lead to againCrossing the method for laser lift-off separates Sapphire Substrate and epitaxial layer 315, and epitaxial layer 315 is transferred on substrate layer 311；ItAfter re-form the first contact electrode 310 and the second contact electrode 320, wherein the first contact electrode 310 is connected with substrate layer 311,And the second contact electrode 320 is connected with epitaxial layer 315, usually, electrode 310 is contacted as P-type electrode using first, and by theTwo contact electrodes 320 are used as N-type electrode.First contact electrode 310 and/or second, which contacts electrode 320, may include one or moreLayer, and the various conductive materials for including metal, conductive oxide and conducting polymer can be used to be formed, the first contact electrode 310And/or second contact electrode 320 can be corresponding in LED30 in a manner that circular, ellipse, strip or entire surface coverSurface is formed.
The forming method of second class LED30 is not limited to aforesaid way, such as can also utilize beyond Sapphire SubstrateSubstrate growth epitaxial layer 315, such as can with metal substrate (metal material is, for example, Cu, Ni or their alloy etc.),GaAs or silicon are as growth substrates, but the utility model is without being limited thereto.
The epitaxial layer 315 of the second class LED30 can include a p-n diodes in the present embodiment, specifically include the first half and leadBody layer, the second semiconductor layer and the interlayer between the first semiconductor layer and the second semiconductor layer.
First semiconductor layer can be realized for example, by p-type semiconductor layer.P-type semiconductor layer may include with chemical formulaInxAlyGa1-x-yN (1≤x≤1,1≤x≤1,1≤x+y≤1) and doped with such as Mg, Zn, Ca, Sr (strontium) or the p of Ba (barium)The semi-conducting material can be used to be formed for the semi-conducting material of type doping agent, the Formula I nxAlyGa1-x-yN is from for exampleIt is selected in GaN, AlN, AlGaN, InGaN, InN, InAlGaN and AlInN etc..
Second semiconductor layer can be realized for example, by n-type semiconductor layer.N-type semiconductor layer can be used with chemical formulaInxAlyGa1-x-yN (1≤x≤1,1≤x≤1,1≤x+y≤1) and n-type dopant doped with such as Si, Ge or Sn is partly ledBody material is formed, the Formula I nxAlyGa1-x-yN is from such as GaN, AlN, AlGaN, InGaN, InN, InAlGaN and AlInNIt is selected in.
However, the utility model is without being limited thereto, the first semiconductor layer may include n-type semiconductor layer, and the second semiconductor layer canIncluding p-type semiconductor layer.
Interlayer be electronics and hole in conjunction with region, interlayer may include with InxAlyGa1-x-yN (1≤x≤1,1≤ x≤1,1≤x+y≤1) semi-conducting material or formed using the semi-conducting material, and can be with single quantum well(SQW) structure or multiple quantum wells (MQW) structure are formed.The multiple quantum trap so that emission wavelength is adjustable, combined efficiency is high, boundaryFace is compound low, and optionally, interlayer may include quantum cable architecture or quantum-dot structure.
Fig. 5 is the diagrammatic cross-section in the XX' directions in Fig. 1 of sub-pixel 311 of the LED display device 100 of the present embodiment.
As shown in figure 5, in the present embodiment, set or formed in display substrate 301 and groove 350 can according toOne and two the same or similar method of embodiment carries out, such as sets or be formed with buffer layer 302 in display substrate 301, hasActive layer 320, gate insulator 303, gate electrode 330, interlayer insulating film 304, source electrode 340a and drain electrode 340b, and pass throughSuch as wet etching, non-driven region in sub-pixel 311 set or are formed groove 350, the shape of groove 350 can be withSecond class LED30 shapes are corresponding variously-shaped, such as can be with perpendicular to the section of display 301 direction groove 350 of substrateIt is square or inverted trapezoidal, and can is polygon, circle etc. in the section parallel to display 301 direction groove 350 of substrate.ThisIn embodiment, the second class LED30 is rectangular shape, and groove 350 is set for the non-driven region in sub-pixel 311 or shapeInto reverse pyramid structure.Thin film transistor (TFT) is used to drive the second class LED30 in sub-pixel 311, in a sub-pixel 311It is interior, more than one thin film transistor (TFT) can be set or be formed, it can also be between each functional layer of such as thin film transistor (TFT)The drive area for overlapping on sub-pixel 111 forms one or more capacitances, and multiple thin film transistor (TFT)s and capacitance can be according to certainFunctional Design connects and forms the pixel-driving circuit 11 in 311 region of sub-pixel, subsequently through the electricity with the second class LED30Property connection so as to fulfill the Active control to the second class LED30, but the utility model is without being limited thereto.In other embodiments,The method being different from described in the present embodiment can be utilized to form thin film transistor (TFT) and groove 350.
It in the present embodiment, is set in the range of sub-pixel 311 or forms a coating 305, the coating 305 coversThin film transistor (TFT) especially source electrode 340a and drain electrode 340b, and the inner surface of groove 350 is covered, but it is not filled with groove350.So that display substrate 301 insulate with LED30, another aspect coating 305 can also be corrected in groove 350 coating 305The defects of surface.The material of coating 305 is, for example, the materials such as silica, silicon nitride, silicon oxynitride, but the utility model not officeIt is limited to this.The thickness of coating 305 is, for example, 0.1~10 micron.
It is set in 350 bottom surface of groove or is formed with second electrode 308, but second electrode 308 does not fill up groove 350.TheTwo electrodes 308 are extended on the public electrode wire outside groove 350 as the multiple of the present embodiment LED display device 100The common common electrode of sub-pixel.In preferred embodiment, above the thin film transistor (TFT) above especially drain electrode 340b, it is not provided with or shapeInto second electrode 308.In the present embodiment, the thickness for the second electrode 308 that 350 bottom surface of groove sets or formed is, for example, 0.1~1Micron.
In the present embodiment, the first contact electrode 310 of the second class LED30 is contacted with bonded substrate 311, and the second contact electricityPole 320 is contacted with epitaxial layer 315.When the second class LED30 is placed into groove 350, the second class LED30 can be adsorbed at one turnIt can be designed on moving device (not shown), on transfer equipment with the suction that arrangement is corresponded with the groove 350 in display substrate 300Attached component, so that once the second class LED30 of multiple adjacent positions can be transferred in groove 350；Passing through transfer equipmentWhen second class LED30 is shifted groove 350, the bottom surface of the second contact electrode 320 towards groove 350 of the second class LED30 is putIt puts, and the second class LED30 is bundled in groove 350 by the mode for example, by pressing or bonding, such as can be in the second classThe side attachment binding agent (not shown) of LED30 bonds so as to 150 and second class LED30 of groove, and binding agent can after curingSecond class LED30 is bundled in groove 350, at this time the second contact electrode 320 and 308 phase of second electrode of 350 bottom surface of grooveContact.
The depth of groove 350 and the height of the second class LED30 are same or similar, for example, the depth minus of groove 350 can be setGo the thickness of coating 205 and subtract 350 bottom surface of groove set or formed second electrode 308 thickness after with the second classThe height of LED30 is suitable, thus, when the second class LED30 is bundled in groove 350, the upper surface of the second class LED30Or first contact 310 surface of electrode and the surface of drain electrode 340b it is substantially flush, but the utility model is without being limited thereto.
First planarization layer 306 can set or be formed in the second class in thin film transistor (TFT), groove 350 and groove 350On LED30.First planarization layer 306 can be made up due to level error (step caused by thin film transistor (TFT), groove 350 and LED30Difference), the first planarization layer 306 can also be used to gap that may be present between 350 and second class LED30 of filling groove.
First electrode 307 can set or be formed in 306 surface of the first planarization layer, and first electrode 307 can electrically connectThin film transistor (TFT) is connected to, and contacts electrode 310 with first and contacts.In the present embodiment, first electrode 307 can pass through restriction or shapeIt is contacted into the first contact hole 1 in the first planarization layer 306 and coating 305 with drain electrode 340b, and first electrode 307Electrode 310 can be contacted with first by limiting or be formed in the second contact hole 2 in the first planarization layer 306 to contact, that is, realizeThe electrical connection that thin film transistor (TFT) with first contacts electrode 310.First electrode 307 can have various flat shapes.It is it is preferred that squareIn case, first electrode 307 can set or be formed by being patterned into discrete island-like shape, in another embodiment, theOne electrode 307 can cover the almost all region in the range of sub-pixel 311, but for different sub-pixels 311 in the range ofFirst electrode 307 is preferably what is be not communicated with.
Dike layer (bank layer) 309 for limiting multiple 311 regions of sub-pixel may be provided at or be formed in sub-pixel311 boundary, dike layer 309 can limit 311 region of sub-pixel for wherein accommodating thin film transistor (TFT) and groove 350.Dike layer 309It may include that such as its side wall limits or formed one or more layers of 311 region of sub-pixel.Its total height can be according to the second class LED30Field angle (angle of field) determine.Dike layer 309 may include the material, the light reflecting material that absorb at least a portion lightOr light-scattering material, it is translucent or impermeable to visible ray (such as the light of wavelength in the range of 380~750nm) that can also includeBright insulating materials.Dike layer 309 may include such as silica, silicon nitride, silicon oxynitride, aluminium oxide, titanium oxide, tantalum oxide or oxygenChange the inorganic oxide of zinc or the inorganic insulating material of inorganic nitride.Dike layer 309 may also include such as black-matrix materialOpaque material.But the utility model is not limited to this.
It should be noted that since the second contact electrode 320 is located at 350 bottom surface of groove and may extend into recessed in the present embodimentOn common electrode outside slot 350, therefore public electrode can be not provided with or formed on dike layer.
In the present embodiment, on the one hand, by the way that the second class LED30 to be arranged to the sub-pixel 311 in LED display device 100In the range of the non-driven region groove 350 that sets or formed in, contraposition that need not be complicated and binding technique can improve theThe transfer efficiency of two class LED30；On the other hand, the electrical connection of the second class LED30 and thin film transistor (TFT) is by partly leadingSystem journey is realized, can enhance the uniformity and reliability of electrical connection.
Example IV
The present embodiment provides a kind of manufacturing method of LED display device 100, for manufacturing as described by embodiment one to threeLED display device 100.
Fig. 6 is the flow diagram of the manufacturing method of the present embodiment LED display device 100.As shown in fig. 6, the methodInclude the following steps：
First, step S1 is performed, a display substrate is provided, is distributed in the range of each sub-pixel shown in substrateDrive area and non-driven region.
Specifically, LED display device 100 includes display substrate and is arranged on the display substrate with plural number in the present embodimentOn display unit, each display unit includes one or more sub-pixels, and the sub-pixel includes drive area and non-Drive area and non-driven region is distributed in substrate in drive area, described show, wherein the drive area can be used for settingThin film transistor (TFT) is put or is formed, the non-driven region can be used for forming LED luminous zones.
Secondly, step S2 is performed, thin film transistor (TFT) is formed in the drive area, and is formed in the non-driven regionGroove.
Specifically, can groove be etched, groove is perpendicular to display substrate side in display substrate by wet etchingTo section can be rectangle, the shapes such as trapezoidal, groove can be circular, oval in the section parallel to display substrate directionThe shapes such as shape, square, diamond shape polygon.The size that the shape of groove is referred to the LED pre-seted suitably adjusts, so as to follow-upThe LED is arranged in groove.
Again, step S3 is performed, LED is set in the groove.
The LED can be the first kind LED30 described in embodiment two or the second class described in embodiment threeLED30, wherein the first contact electrode 210 and second of the first kind LED20 contacts electrode 220 and is located at the same of substrate layer 200One side, and the first of the second class LED30 the contact electrode 310 and second contacts the both sides that electrode 320 is located at substrate layer 311.Also, after the LED is transferred to the groove, the LED is away from the surface of groove floor and the opening of the groovePlanes align.
For above-mentioned second class LED, before the LED is transferred in the groove, groove floor shape is additionally included inInto coating and second electrode, the coating also covers the inner surface and thin film transistor (TFT) of the groove, second electricityPole is located on the coating of groove floor and extends to outside the groove, is connected with the common electrode of LED display device.After the second class LED is arranged at the groove, the second contact electrode of the second class LED and the groove floorSecond electrode contact.
Then, perform step S4, form the first planarization layer, first planarization layer cover the thin film transistor (TFT),The groove and the LED.
Followed by execution step S5 forms first electrode, the first electrode is by setting on first planarization layerThe first contact hole being placed in first planarization layer is contacted with the thin film transistor (TFT), and the first electrode also passes through to be formedThe second contact hole in first planarization layer contacts electrode with the first of the LED and contacts.
Specifically, by the first contact hole and the second contact hole, the first electrode contacts electrode by the first of the LEDIt is connected with the drain electrode of thin film transistor (TFT).
It for above-mentioned first kind LED, further includes to form the second planarization layer and second electrode, the second electrode and instituteThe second contact electrode connection of first kind LED is stated, the setting on the second planarization layer and second electrode can refer to embodiment twoDescription, details are not described herein again.
By foregoing description, present embodiment describes a kind of manufacturing methods of LED display device, on the one hand, in LEDNon-driven region in the range of the sub-pixel of display device forms groove, and LED is arranged in this groove, can improveThe transfer efficiency of LED；Further, LED is conducive to LED away from the surface of the groove and the planes align at slot openingElectric interconnection is formed in same plane or apart from close plane with thin film transistor (TFT), and the reliable of electric interconnection can be enhancedProperty；On the other hand, in the manufacturing method of LED display device provided by the utility model, the pixel driver of LED display deviceIt is that electric interconnection is formed by manufacture of semiconductor between part such as thin film transistor (TFT) and LED, the uniform of electric interconnection can be enhancedProperty and reliability.
It should be noted that each embodiment is described by the way of progressive in this specification, each embodiment emphasis is saidBright is all difference from other examples, and just to refer each other for identical and similar part between each embodiment.It is rightFor method disclosed in embodiment, due to embodiment disclosed in structure it is corresponding, so description it is fairly simple, correlationPlace illustrates referring to structure division.
Foregoing description is only the description to the utility model preferred embodiment, and not the utility model interest field is appointedWhat is limited, and any those skilled in the art without departing from the spirit and scope of the utility model, may be by the disclosure aboveMethods and technical content technical solutions of the utility model are made with possible variation and modification, it is therefore, every without departing from this realityWith the content of new technique scheme, any simple modification made according to the technical essence of the utility model to above example,Equivalent variations and modification belong to the protection domain of technical solutions of the utility model.