A kind of semiconductor side pumped amplification systemTechnical field
Laser technology field is the utility model is related to, especially a kind of semiconductor side pumped amplification system.
Background technology
For semiconductor pumped solid laser system because its is all solid state, reliability is high, obtains the advantages that efficiency high and long lifespanIt is widely applied, its pump mode is broadly divided into profile pump and end pumping, relative to end pumping, profile pump structure phaseTo simple, it is easy to accomplish high-power output, therefore high power semiconductor pump laser system is more based on profile pump.
For semiconductor side pumped amplifier, pumping light utilization ratio is lifted, it is important to make pump lightIt is evenly distributed on gain media direction of principal axis, the laser and amplification system of existing profile pump, usual fast axle is perpendicular to increasingBeneficial medium axle, slow axis is parallel to gain media axle, and under such a pump mode, distribution of the pump light on gain media axial direction isUneven, absorption of the gain media to amplification laser on the contrary be present, so as to cause amplification efficiency relatively low.
The content of the invention
In order to solve above-mentioned technical problem, the purpose of this utility model is to provide a kind of reasonable in design, simple in constructionSemiconductor side pumped amplification system.
In order to realize above-mentioned technical purpose, technical scheme is used by the utility model：
A kind of semiconductor side pumped amplification system, it includes the seed light source, coupled system, semiconductor sequentially setPumping source, waveguide, gain media and heat sink, described gain media are located in heat sink, and the end face of gain media is with couplingSystem is relative, and described waveguide end is embedded in heat sink interior and relative with gain media outer wall, the other end and semiconductor of waveguideThe pump light emission port of pumping source is relative, after the coupled system collimation of seed laser of described seed light source transmitting, from increasingThe beneficial medium end face relative with coupled system enters gain media, and the pump light of the semiconductor pumping sources transmitting is anti-in waveguideAfter penetrating, enter from side in gain media, and absorbed after gain media outer wall multiple reflections by gain media, the semiconductorThe quick shaft direction of the pump light of pumping source is parallel with the axial direction of gain media, and the light intensity of the pump light is in gain media axial directionOn carry out overlapping and formed and be uniformly distributed.
Further, described semiconductor pumping sources are single-tube or bar stripe shape, and described semiconductor pumping sources are oneAbove semiconductor laser forms.
Further, described seed light source is operated in a manner of continuous or pulse.
Further, the wave-length coverage of the seed light source is 660nm~3000nm.
Further, described gain media be crystal or glass as base material, its doped chemical have neodymium, erbium, ytterbium,Thulium, holmium, chromium, titanium, praseodymium, samarium.
Further, plating is provided with the seed laser ripple sent with seed light source on two end faces of the gain media axial directionLong adaptable anti-reflection film.
Further, described waveguide is plate glass or quartz material.
Further, the end surface shape of the gain media is circular, ellipse, polygon or D-shaped.
Further, described gain media is provided with the height corresponding with pump wavelength with plating on the heat sink outer wall being in contactAnti- film, described gain media with it is heat sink between leave gap and position it is relative outer wall plating be provided with pump wavelength it is correspondingAnti-reflection film.
Further, described gain media is fixed on heat sink to be gluing.
Preferably, the eyeglass of the coupled system is more than a piece of.
Using above-mentioned technical scheme, compared to prior art, the beneficial effects of the utility model are：Pass through semiconductor pumpThe pump light quick shaft direction in Pu source parallel to the axial direction of gain media, in gain media axially submit to build up and be uniformly distributed by pump lightState, so all amplification to seed laser produces beneficial effect, avoid due to pumping optical axis direction skewnessCaused seed laser amplification efficiency, which declines, even generates the problem of gain media absorbs to seed laser, it is achieved thereby thatThe efficient amplification of seed laser.
Brief description of the drawings
The utility model is further elaborated with reference to the accompanying drawings and detailed description：
Fig. 1 is the brief configuration diagrammatic cross-section of the semiconductor side pumped amplification system embodiment 1 of the utility model；
Fig. 2 is another visual angle brief configuration diagrammatic cross-section of structure shown in Fig. 1, and it illustrates the utility model pump lightReflection schematic diagram in the gain medium；
Fig. 3 is the brief configuration diagrammatic cross-section of the semiconductor side pumped amplification system embodiment 2 of the utility model.
Embodiment
A kind of semiconductor side pumped amplification system, it includes the seed light source, coupled system, semiconductor sequentially setPumping source, waveguide, gain media and heat sink, described gain media are located in heat sink, and the end face of gain media is with couplingSystem is relative, and described waveguide end is embedded in heat sink interior and relative with gain media outer wall, the other end and semiconductor of waveguideThe pump light emission port of pumping source is relative, after the coupled system collimation of seed laser of described seed light source transmitting, from increasingThe beneficial medium end face relative with coupled system enters gain media, and the pump light of the semiconductor pumping sources transmitting is anti-in waveguideAfter penetrating, enter from side in gain media, and absorbed after gain media outer wall multiple reflections by gain media, the semiconductorThe quick shaft direction of the pump light of pumping source is parallel with the axial direction of gain media, and the light intensity of the pump light is in gain media axial directionOn carry out overlapping and formed and be uniformly distributed.
Further, described semiconductor pumping sources are single-tube or bar stripe shape, and described semiconductor pumping sources are oneAbove semiconductor laser forms.
Further, described seed light source is operated in a manner of continuous or pulse.
Further, the wave-length coverage of the seed light source is 660nm~3000nm.
Further, described gain media be crystal or glass as base material, its doped chemical have neodymium, erbium, ytterbium,Thulium, holmium, chromium, titanium, praseodymium, samarium.
Further, plating is provided with the seed laser ripple sent with seed light source on two end faces of the gain media axial directionLong adaptable anti-reflection film.
Further, described waveguide is plate glass or quartz material.
Further, the end surface shape of the gain media is circular, ellipse, polygon or D-shaped.
Further, described gain media is provided with the height corresponding with pump wavelength with plating on the heat sink outer wall being in contactAnti- film, described gain media with it is heat sink between leave gap and position it is relative outer wall plating be provided with pump wavelength it is correspondingAnti-reflection film.
Further, described gain media is fixed on heat sink to be gluing.
Preferably, the eyeglass of the coupled system is more than a piece of.
Embodiment 1
As shown in Fig. 1 to one of 2, seed light source 101 that the utility model includes sequentially setting, coupled system 102, partly leadBody pumping source 103, waveguide 104, gain media 105 and heat sink 106, described gain media 105 are located in heat sink 106, are increasedThe end face of beneficial medium 105 is relative with coupled system 102, and described one end of waveguide 104 is embedded in heat sink 106 and is situated between with gainThe outer wall of matter 105 is relative, and the other end of waveguide 104 is relative with the pump light emission port of semiconductor pumping sources 103.
After the coupled system 102 of seed laser that seed light source 101 is launched collimates, from gain media 105 and coupled system102 relative end faces enter gain media 105, and the pump light that semiconductor pumping sources 103 are launched enters in waveguide 104, its medium waveLeading 104 material can be made up of plate glass or quartz, and the end face of waveguide 104 is coated with launches with semiconductor pumping sources 103Pump light the corresponding anti-reflection film of wavelength, pump light enters in gain media 105 after the internal reflection of waveguide 104 from side,The thickness of waveguide 104 is entered by the refractive index of the slow axis angle of departure of semiconductor pumping sources 103, the wavelength of pump light and waveguide 104Row determines.
Wherein semiconductor pumping sources 103 are made up of multiple semiconductor lasers, and its number is located at heat at more than oneHeavy 106 the same side, the quick shaft direction of the pump light of each semiconductor laser is parallel with the axial direction of gain media 105, i.e.,The transmission direction of seed laser, set the quick shaft direction angle of divergence of all semiconductor lasers as θ, each semiconductor laser itBetween at intervals of L, make it that pumping light intensity is evenly distributed on the axle of gain media, according to the luminous point of semiconductor pumping sources 103 andThe distance between the axle of gain media 105 d, and the light distribution of the quick shaft direction of semiconductor pumping sources, it is corresponding so as to drawL values.
Fig. 2 shows that the semiconductor side pumped amplification system pump light of the utility model is anti-in gain media 105Penetrate schematic diagram, it illustrates semiconductor pumping sources 103, waveguide 104, gain media 105, high-reflecting film 105A, anti-reflection film 105B andHeat sink 106, in the axially direction of gain media 105, because of the medium that gain media 105 is low absorption coefficient, thereforeGain media 105 disposably can not fully absorb pump light, therefore once the pump light after can transmit gain media105, then reflected by the outer wall of gain media 105, pump light is situated between after the outer wall multiple reflections of gain media 105 by gainMatter 105 absorbs, and the population of gain media 105 inverts, and all gathers energy level.
When the seed laser that seed light source 101 is sent out of gain media 105 by when, the upper energy level of gain media 105The downward energy level transition of particle, so as to realize the amplification to seed laser.
Embodiment 2
As shown in figure 3, the seed light source 201, coupled system 202, semiconductor pumped that the utility model includes sequentially settingSource 203a, 203b, waveguide 204a, 204b, gain media 205 and heat sink 206, described gain media 205 are located in heat sink 206Interior, the end face of gain media 205 is relative with coupled system 202, and described waveguide includes being oppositely arranged on heat sink 206 both sidesFirst wave guide 204a and second waveguide 204b, one end of the first wave guide 204a and second waveguide 204b are embedded heat sink respectively206 interior and, the first wave guide 204a other end and first semiconductor pumping sources 203a pumpings relative with the outer wall of gain media 205Light emission port is relative, the pump light emission port phase of the second waveguide 204b other end and the second semiconductor pumping sources 203bIt is right.
After the coupled system 202 of seed laser that seed light source 201 is launched collimates, from gain media 205 and coupled system202 relative end faces enter gain media 205, and it is right with it that the pump light that semiconductor pumping sources 203a, 203b launch respectively entersIn waveguide 204a, the 204b answered, wherein waveguide 204a, 204b material can be made up of plate glass or quartz, waveguide204a, 204b end face are coated with the anti-reflection film corresponding with the wavelength of the pump light of semiconductor pumping sources 203a, 203b transmitting, pumpPu light enters in gain media 205, waveguide 204a, 204b thickness are by semiconductor pumping sources after waveguide internal reflection from sideThe refractive index of 203a, 203b the slow axis angle of departure, the wavelength of pump light and waveguide 204a, 204b is determined.
Wherein semiconductor pumping sources 203a, 203b is made up of multiple semiconductor lasers, its number at more than one, andThe both sides for being oppositely arranged on heat sink 206 respectively are in evenly distributed, the quick shaft direction of the pump light of each semiconductor laser and increasingThe axial direction of beneficial medium 205 is parallel, i.e. the transmission direction of seed laser, sets the quick shaft direction diverging of all semiconductor lasersAngle is θ, between each semiconductor laser at intervals of L, make it that pumping light intensity is evenly distributed on the axle of gain media, according toThe distance between the axle of semiconductor pumping sources 203a, 203b luminous point and gain media 205 d, and semiconductor pumping sources are fastThe light distribution of direction of principal axis, so as to draw corresponding L values.
In the axially direction of gain media 205, because of the medium that gain media 205 is low absorption coefficient, thereforeGain media 205 disposably can not fully absorb pump light, therefore once the pump light after can transmit gain media205, then reflected by the outer wall of gain media 205, pump light is situated between after the outer wall multiple reflections of gain media 205 by gainMatter 205 absorbs, and the population of gain media 205 inverts, and all gathers energy level.
When the seed laser that seed light source 201 is sent out of gain media 205 by when, the upper energy level of gain media 205The downward energy level transition of particle, so as to realize the amplification to seed laser.
Although describing embodiment of the present utility model above in association with accompanying drawing, those skilled in the art are according to thisThe equivalent modification made in the case of the spirit and scope of utility model and change, each fall within what appended claims were limitedWithin the scope of.