技术领域technical field
本实用新型涉及打印机，详细地讲是一种热敏打印头。The utility model relates to a printer, in particular to a thermal printing head.
背景技术Background technique
日本专利特开2001-38934号公报（下称专利文献1）图1中公开了一种结构，发热电阻体3上的电极包含主要成分为铝的下层电极4a和比下层电极4a的熔点高的金属为主要成分的上层电极4b，防止电极上的保护膜出现小凸起。Japanese Patent Application Laid-Open No. 2001-38934 (hereinafter referred to as Patent Document 1) discloses a structure in FIG. 1. The electrodes on the heating resistor 3 include a lower electrode 4a whose main component is aluminum and a metal electrode having a higher melting point than the lower electrode 4a. The upper layer electrode 4b whose main component is metal prevents small bumps from appearing on the protective film on the electrode.
另外，日本专利特开平2-192959号公报（下称专利文献2）图1中公开了一种结构，发热电阻体3上的电极包括含有Si的铝电极层和不含有硅的铝电极层的双层构造。In addition, Japanese Patent Application Laid-Open No. 2-192959 (hereinafter referred to as Patent Document 2) discloses a structure in FIG. 1. The electrodes on the heating resistor 3 include an aluminum electrode layer containing Si and an aluminum electrode layer not containing Si. Double layer construction.
对比文献：Comparative literature:
专利文献1：日本专利特开2001-38934号公报图1；Patent Document 1: Figure 1 of Japanese Patent Laid-Open No. 2001-38934;
专利文献2：日本专利特开平2-192959号公报图1。Patent Document 2: FIG. 1 of Japanese Patent Application Laid-Open No. 2-192959.
发明概要：Summary of invention:
专利文献1所公开的发明中，铝为主要成分的金属材料形成下层电极，熔点更高的金属材料形成上层电极，防止小凸起的出现，形成电极膜层需要使用复数个不同材质的靶材，会提高电极的制作成本。In the invention disclosed in Patent Document 1, the metal material with aluminum as the main component forms the lower electrode, and the metal material with a higher melting point forms the upper electrode to prevent the appearance of small bumps. Multiple targets of different materials are required to form the electrode film layer. , will increase the manufacturing cost of the electrode.
另外，专利文献2中公开的发明中，电极分为含有硅的铝电极层和不含有硅的铝电极层，形成电极膜层需要复数个不同材质的靶材，会提高电极的制作成本。In addition, in the invention disclosed in Patent Document 2, the electrode is divided into an aluminum electrode layer containing silicon and an aluminum electrode layer not containing silicon. The formation of the electrode film layer requires a plurality of targets of different materials, which will increase the production cost of the electrode.
发明内容Contents of the invention
本实用新型的目的就是为了克服现有技术的不足，在发热电阻体领域周围不增加新的材质，解决电极小凸起不良问题，提供一种低成本、高品质的热敏打印头。The purpose of this utility model is to overcome the deficiencies of the prior art, without adding new materials around the area of the heating resistor, to solve the problem of small bumps on the electrodes, and to provide a low-cost, high-quality thermal print head.
一种热敏打印头，包括表面设有非晶质釉层的绝缘基板，非晶质釉层上的电阻层，其特征在于设于电阻层上、部分被刻蚀去除使电阻层在主打印方向形成直线发热领域的铝导体层，铝导体层上接近于上述直线发热领域形成的与上述电阻层材质相同、厚度大于上述电阻层厚度的缓冲层，在绝缘基板平面内垂直于上述主打印方向采用选择刻蚀方法部分地去除了上述缓冲层、铝导体层和电阻层而形成的多个分离的电阻发热体以及与每个电阻发热体相连接的两侧电极，至少部分覆盖上述电阻发热体和上述两侧电极的绝缘材料形成的保护层。A thermal printing head, comprising an insulating substrate with an amorphous glaze layer on the surface, and a resistance layer on the amorphous glaze layer, which is characterized in that it is arranged on the resistance layer, and part of it is etched and removed so that the resistance layer is Direction forms the aluminum conductor layer in the linear heating area, and the buffer layer formed on the aluminum conductor layer close to the above-mentioned linear heating area and having the same material as the above-mentioned resistance layer and having a thickness greater than the thickness of the above-mentioned resistance layer is perpendicular to the above-mentioned main printing direction in the plane of the insulating substrate Selective etching method is used to partially remove the above-mentioned buffer layer, aluminum conductor layer and resistance layer to form a plurality of separated resistance heating elements and electrodes on both sides connected to each resistance heating element, at least partially covering the above-mentioned resistance heating elements And the protective layer formed by the insulating material of the electrodes on both sides.
本发明所述的电阻层和缓冲层的材质为TaSiO2，缓冲层的厚度大于0.1μｍ。The material of the resistance layer and the buffer layer in the present invention is TaSiO2, and the thickness of the buffer layer is greater than 0.1 μm.
本发明在靠近电阻发热体领域，利用耐热温度高的电阻层材料将耐热温度较低的铝电极层夹在中间，抑制受热时铝电极表面形成的小凸起，形成高打印品质的热敏打印头。In the field close to the resistance heating element, the invention uses the resistance layer material with high heat-resistant temperature to sandwich the aluminum electrode layer with low heat-resistant temperature, suppresses the small protrusions formed on the surface of the aluminum electrode when heated, and forms a high-quality thermal print. sensitive print head.
附图说明Description of drawings
图1，是根据本实用新型的实施方式1所形成的热敏打印头的发热领域周围的断面图。FIG. 1 is a cross-sectional view around a heat-generating region of a thermal printhead according to Embodiment 1 of the present invention.
图2，是根据本实用新型的实施方式1所形成的热敏打印头的发热领域的周围的平面图。FIG. 2 is a plan view around a heat-generating region of the thermal printhead according to Embodiment 1 of the present invention.
图3，是用于说明根据本实用新型的实施方式1所形成热敏打印头的制造方法方块流程图。FIG. 3 is a block flow chart illustrating a method for manufacturing a thermal print head according to Embodiment 1 of the present invention.
图中标记：绝缘基板 1、非晶质釉层2、电阻层3、发热领域3a、铝导体层4、共通电极4a、个别电极4b、延长电极图型4c、缓冲层5、共通电极侧缓冲层5a、个别电极侧缓冲层5b、延长电极图型5c、保护膜层6、个别发热电阻体31a。Marks in the figure: insulating substrate 1, amorphous glaze layer 2, resistance layer 3, heating area 3a, aluminum conductor layer 4, common electrode 4a, individual electrode 4b, extended electrode pattern 4c, buffer layer 5, common electrode side buffer Layer 5a, individual electrode side buffer layer 5b, extended electrode pattern 5c, protective film layer 6, individual heating resistor 31a.
具体实施方式detailed description
下面结合实施例对本发明作进一步说明。实施方式1 The present invention will be further described below in conjunction with embodiment. Embodiment 1
如图1所示，诸如陶瓷基板的绝缘基板1，绝缘基板1上印刷并经过1200℃～1300℃温度烧结形成的全面或部分不含铅（Pb）的非晶质釉层2，印刷烧结釉层的工程称为釉基板形成工程，As shown in Figure 1, an insulating substrate 1 such as a ceramic substrate, a fully or partially lead (Pb)-free amorphous glaze layer 2 printed on the insulating substrate 1 and sintered at a temperature of 1200 ° C to 1300 ° C, printed sintered glaze The engineering of the layer is called the glaze substrate forming engineering,
然后在非晶质釉层2上溅射（sputtering）厚度为100～3000 Å的膜厚均一的电阻层3，形成电阻层的工程成为电阻层成膜工程，Then sputtering (sputtering) a resistance layer 3 with a thickness of 100 to 3000 Å on the amorphous glaze layer 2 to form a resistance layer with a uniform film thickness is called a resistance layer film formation process.
电阻层的材料，可以是金属陶瓷系材料TaSiO2，TaSiC也具有同等的效果，The material of the resistance layer can be cermet-based material TaSiO2, TaSiC also has the same effect,
而且，为保证电阻层和釉层的附着强度，可以在釉层和电阻层之间增加铬（Cr）衬底层，Moreover, in order to ensure the adhesion strength between the resistance layer and the glaze layer, a chromium (Cr) substrate layer can be added between the glaze layer and the resistance layer,
将溅射了电阻层3的绝缘基板1在300℃～450℃的真空或大气氛围中进行约10～20分钟的热处理，使电阻层的方块电阻达到预期值，该工程称为热处理工程，The insulating substrate 1 sputtered with the resistive layer 3 is heat-treated for about 10 to 20 minutes in a vacuum or atmospheric atmosphere at 300°C to 450°C, so that the sheet resistance of the resistive layer reaches the expected value. This project is called a heat treatment project.
在热处理过的绝缘基板1的电阻层3表面溅射厚度约0.5～1.0μm的铝（Al）导体层4，该工程称为铝导体层成膜工程，An aluminum (Al) conductor layer 4 with a thickness of about 0.5-1.0 μm is sputtered on the surface of the resistance layer 3 of the heat-treated insulating substrate 1. This project is called the film formation project of the aluminum conductor layer.
然后，沿基板长边方向，使用掩膜，仅在预先设定的发热领域3a及其近旁的铝导体层4表面溅射厚度为1000～10000Å的TaSiO2缓冲层5，缓冲层5的厚度超过1000Å，可以减轻缓冲层5下的铝导体层4在受热时形成凸起，溅射缓冲层5的工程称为缓冲层成膜工程，Then, along the direction of the long side of the substrate, using a mask, sputter a TaSiO2 buffer layer 5 with a thickness of 1000-10000 Å only on the surface of the predetermined heating area 3a and the surface of the aluminum conductor layer 4 near it, and the thickness of the buffer layer 5 exceeds 1000 Å , can reduce the aluminum conductor layer 4 under the buffer layer 5 to form a bulge when heated, and the project of sputtering the buffer layer 5 is called the film-forming project of the buffer layer.
然后，沿绝缘基板的长边方向，将电阻层3上的缓冲层5和铝导体层4的一部分按一定（给出范围）的幅宽刻蚀去除形成连续狭缝状的发热领域3a，如图1，与基板长边方向垂直的断面图中所标注的幅宽为100μm， 即，将缓冲层5和铝导体层4的一部分刻蚀去除，使电阻层3露出，在主打印方向（基板长边方向）形成直线状的发热领域3a,该工程成为发热领域形成工程，Then, along the long side direction of the insulating substrate, a part of the buffer layer 5 and the aluminum conductor layer 4 on the resistance layer 3 is etched and removed according to a certain (given range) width to form a continuous slit-shaped heat-generating region 3a, as In Fig. 1, the width marked in the sectional view perpendicular to the long side direction of the substrate is 100 μm, that is, a part of the buffer layer 5 and the aluminum conductor layer 4 is etched and removed to expose the resistance layer 3, and in the main printing direction (substrate Long side direction) to form a linear heat-generating area 3a, this project becomes a heat-generating area forming project,
发热领域3a的形成 ，可以在缓冲层5及铝导体层4上贴付或涂布聚酰亚胺树脂，用光罩曝光后，显像去除发热领域内的聚酰亚胺树脂，用含有CF4气体的等离子体刻蚀去除发热领域的缓冲层5，用铝刻蚀液刻蚀去除发热领域的铝导体层4，铝导体层下面的铬（Cr）衬底层用铬刻蚀液刻蚀去除，发热体层3材料为TaSiC时可以采用相同的加工方法，The formation of heat-generating region 3a can paste or coat polyimide resin on buffer layer 5 and aluminum conductor layer 4, after exposure with photomask, develop and remove the polyimide resin in heat-generating region, use CF4 Gas plasma etching removes the buffer layer 5 in the heat-generating area, etches and removes the aluminum conductor layer 4 in the heat-generating area with an aluminum etchant, and removes the chromium (Cr) substrate layer under the aluminum conductor layer with a chromium etchant. When the heating element layer 3 material is TaSiC, the same processing method can be adopted,
发热领域3a的形成，采用TaSiO2专用刻蚀液去除发热领域内的缓冲层5，以及使用含有Cl2的等离子体刻蚀去除发热领域内的铝导体层4，具有同等的实施效果。For the formation of the heat-generating region 3a, TaSiO2 special etching solution is used to remove the buffer layer 5 in the heat-generating region, and plasma etching containing Cl2 is used to remove the aluminum conductor layer4 in the heat-generating region, which has the same implementation effect.
图2是根据本实用新型的实施方式1形成的热敏打印头的发热领域周围的平面图，用于形成图型的曝光光罩，如图2所示包括发热电阻体31、共通电极4a和个别电极4b，2 is a plan view around the heating area of the thermal print head formed according to Embodiment 1 of the present utility model. The exposure mask for forming patterns includes heating resistors 31, common electrodes 4a and individual electrodes 4a as shown in FIG. electrode 4b,
使用如图2所示的曝光光罩，利用涂胶、露光、显像、刻蚀、剥胶等公知的写真制版技术，在绝缘基板平面内沿与主打印方向垂直方向分别部分地选择刻蚀去除缓冲层、铝导体层、电阻层直至露出釉层，形成导线图型，Using the exposure mask as shown in Figure 2, using well-known photo-plate-making techniques such as gluing, exposure, development, etching, and stripping, etc., partially selectively etch in the plane of the insulating substrate along the direction perpendicular to the main printing direction Remove the buffer layer, aluminum conductor layer, and resistance layer until the glaze layer is exposed to form a wire pattern,
导线图型形成后，发热领域3a就被分割成若干个发热电阻体31，同时，形成具有上层为缓冲层5和下层为铝导体层4、铝导体层4分别与若干个发热电阻体31连接的共通电极4a和个别电极4b，而且，为防止发热领域出现急剧的高度差，使缓冲层5与发热电阻体31不连接，该工程称为导线图型形成工程。After the wire pattern is formed, the heating area 3a is divided into several heating resistors 31. At the same time, a buffer layer 5 on the upper layer and an aluminum conductor layer 4 on the lower layer are formed. The aluminum conductor layer 4 is connected to several heating resistors 31 respectively. The common electrode 4a and the individual electrode 4b, and in order to prevent a sharp height difference in the heating area, the buffer layer 5 and the heating resistor 31 are not connected. This process is called a wiring pattern forming process.
上述导线图型的刻蚀，可以使用铝刻蚀液与TaSiO2刻蚀液形成的混合刻蚀液，对缓冲层5、铝导体层4、抵抗层3同时进行刻蚀，或者分别使用铝刻蚀液以及TaSiO2刻蚀液单独进行刻蚀，电阻层为TaSiC材料时可采用同样的方式，电阻层下具有铬衬底层时，可采用刻蚀Cr和TaSiO2的混合刻蚀液，而且，电阻层3采用刻蚀液刻蚀的湿法刻蚀，或者采用含有CF4气体等离子体的干法刻蚀，都不影响本实用新型的实施效果。For the etching of the above-mentioned wire pattern, a mixed etching solution formed by an aluminum etching solution and a TaSiO2 etching solution can be used to simultaneously etch the buffer layer 5, the aluminum conductor layer 4, and the resist layer 3, or use aluminum etching solution respectively. Etching solution and TaSiO2 etching solution alone, the same method can be used when the resistance layer is TaSiC material, when there is a chromium substrate layer under the resistance layer, the mixed etching solution of etching Cr and TaSiO2 can be used, and the resistance layer 3 Adopting the wet etching of etchant etching, or adopting the dry etching of CF4 gas plasma does not affect the implementation effect of the utility model.
利用溅射或者CVD方法形成用于保护发热领域3a、共通电极4a和个别电极4b的保护膜6的工程称为保护膜成膜工程，保护膜6的材料，使用赛隆（SiAlON）或者氮化硅（Si3N4）较为适宜。The process of forming the protective film 6 for protecting the heat generating area 3a, the common electrode 4a and the individual electrode 4b by sputtering or CVD is called a protective film forming process. The material of the protective film 6 is SiAlON or nitride Silicon (Si3N4) is more suitable.
图2中，发热体31沿基板长边方向分布，刻蚀形成的共通电极4a和个别电极4b与发热体31相连接，铝导体层4构成的电极4b的延长部分成为延长电极图型4c，与缓冲层5构成的延长电极图型5c重叠连接，这样，即使引出电极细长，也能降低引出电极的导电损耗。In Fig. 2, the heating element 31 is distributed along the long side direction of the substrate, and the common electrode 4a and the individual electrode 4b formed by etching are connected to the heating element 31, and the extended part of the electrode 4b formed by the aluminum conductor layer 4 becomes the extended electrode pattern 4c, The extended electrode pattern 5c formed by the buffer layer 5 is overlapped and connected, so that even if the lead-out electrode is elongated, the conduction loss of the lead-out electrode can be reduced.
图3，是本实用新型的实施方式1的热敏打印头制造方法的方块流程图，如图3所示，整个制造流程包括：给绝缘基板1实施釉层2的基板施釉工程，电阻层3成膜的电阻层成膜工程，成膜后的电阻层进行热处理的热处理工程，铝导体层4成膜的铝导体成膜工程，铝导体层4上的缓冲层5成膜的缓冲层成膜工程，部分刻蚀去除缓冲层5和铝导体层4形成发热领域3a的发热领域形成工程，刻蚀形成发热电阻体31和共通电极4a与个别电极4b、延长电极4c和5c的图型形成工程，形成保护膜6的保护膜形成工程。Fig. 3 is a block flow chart of the method for manufacturing a thermal print head according to Embodiment 1 of the present invention. As shown in Fig. 3 , the entire manufacturing process includes: the insulating substrate 1 is implemented with the substrate glazing project of the glaze layer 2, and the resistance layer 3 Film forming process of resistance layer, heat treatment process of heat treatment of resistance layer after film formation, aluminum conductor film formation process of aluminum conductor layer 4 film formation, buffer layer film formation of buffer layer 5 on aluminum conductor layer 4 Engineering, partial etching removes the buffer layer 5 and the aluminum conductor layer 4 to form the heating area 3a The heating area forming process, the etching forming the heating resistor 31 and the common electrode 4a and the individual electrode 4b, the extension electrode 4c and 5c pattern forming process , a protective film forming process of forming the protective film 6 .
利用上述实施方式1，在发热领域附近的耐温低的铝导体层上下被比铝电极耐温高的膜层包夹，与发热电阻体相连接的两侧电极在发热电阻体发热时也不会出现凸起或变材料质问题，形成高品质的热敏打印头。Using the above-mentioned first embodiment, the aluminum conductor layer with low temperature resistance in the vicinity of the heating area is sandwiched by the film layer with higher temperature resistance than the aluminum electrode, and the electrodes on both sides connected to the heating resistor will not be damaged when the heating resistor generates heat. There will be raised or altered material quality issues resulting in a high quality thermal printhead.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520017906.4UCN204382824U (en) | 2015-01-12 | 2015-01-12 | Thermal printing head |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520017906.4UCN204382824U (en) | 2015-01-12 | 2015-01-12 | Thermal printing head |
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| CN204382824Utrue CN204382824U (en) | 2015-06-10 |
| Application Number | Title | Priority Date | Filing Date |
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| CN201520017906.4UExpired - LifetimeCN204382824U (en) | 2015-01-12 | 2015-01-12 | Thermal printing head |
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| CN (1) | CN204382824U (en) |
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