CN204131085U - Based on the battery system anti-surge circuit of hot plug chip - Google Patents

Abstract

Translated fromChinese

基于热插拔芯片的电池系统防浪涌电路，其连接在模组与电池正极连接的输入端上，包括连接在模组的输入端的MOS管，所述MOS管上连接有控制其导通关断的热插拔芯片，所述热插拔芯片包括用于检测流经MOS管电流值的检测电路，所述检测电路与接收其发送的电流值并与预设防浪涌电流值比较输出控制信号的控制电路，所述控制电路上连接有由其控制驱动MOS管导通关断的驱动电路连接，当检测电路检测到的电流值大于预设防浪涌电流值时，所述控制电路输出关断MOS管的控制信号给驱动电路，驱动电路关断MOS管，当检测电路检测到的电流值小于预设防浪涌电流值时，所述控制电路输出导通MOS管的控制信号给驱动电路，驱动电路导通MOS管。

The anti-surge circuit of the battery system based on the hot-swappable chip is connected to the input end of the module connected to the positive pole of the battery, including a MOS tube connected to the input end of the module, and the MOS tube is connected to a switch to control its conduction. The hot-swappable chip that is disconnected, the hot-swappable chip includes a detection circuit for detecting the current value flowing through the MOS tube, and the detection circuit receives the current value sent by it and compares it with the preset anti-surge current value to output control signal control circuit, the control circuit is connected with a drive circuit that controls the on-off of the drive MOS tube, and when the current value detected by the detection circuit is greater than the preset anti-surge current value, the control circuit outputs The control signal for turning off the MOS tube is given to the drive circuit, and the drive circuit turns off the MOS tube. When the current value detected by the detection circuit is less than the preset anti-surge current value, the control circuit outputs a control signal for turning on the MOS tube to the driver. circuit, the driving circuit turns on the MOS tube.

Description

Translated fromChinese

基于热插拔芯片的电池系统防浪涌电路Anti-surge circuit for battery system based on hot-swappable chip

技术领域technical field

本实用新型涉及一种基于热插拔芯片的电池系统防浪涌电路。 The utility model relates to an anti-surge circuit of a battery system based on a hot-swappable chip. the

背景技术Background technique

热插拔是指在系统带电的状态下，将模组、卡或子系统插到系统上而不影响系统的操作，且不影响插入的模组、卡、子系统的运行。 Hot swapping refers to inserting modules, cards or subsystems into the system without affecting the operation of the system or the operation of the inserted modules, cards or subsystems when the system is powered on. the

图1所示为热插拔过程，其中左边代表供电系统，一般在供电的输出端有一个大电容，右边代表模组，模组的输入端也有电容。模组插入系统之前，输入电容没有被充电，当把模组插入系统时，相当于把两个端电压不同的大电容并联，根据基尔霍夫定律，会有一个很大的瞬间电流向模组输入电容充电，这个大的瞬时电流很可能造成系统供电电压不正常，引线长的话会有很大的引线电感，从而引起电压振荡，电压尖峰可能会永久性的损伤模组。在等效RLC值达到一定范围时，模组输入端的尖峰电压会达到两倍的额定输入电压，而模组的最大电压范围（输入电压范围设计预留）往往没有这么大，从而引起对模组的损伤。 Figure 1 shows the hot swap process, where the left side represents the power supply system, generally there is a large capacitor at the output end of the power supply, and the right side represents the module, and the input end of the module also has a capacitor. Before the module is inserted into the system, the input capacitor is not charged. When the module is inserted into the system, it is equivalent to connecting two large capacitors with different terminal voltages in parallel. According to Kirchhoff's law, there will be a large instantaneous current to the module. The group input capacitor is charged. This large instantaneous current may cause abnormal system power supply voltage. If the lead wire is long, there will be a large lead inductance, which will cause voltage oscillation, and the voltage spike may permanently damage the module. When the equivalent RLC value reaches a certain range, the peak voltage at the input terminal of the module will reach twice the rated input voltage, but the maximum voltage range of the module (reserved for the input voltage range design) is often not so large, which causes damage to the module damage. the

传统的解决方案有很多，比如在供电系统和模组之间串联热敏电阻，或者在供电系统两端并联压敏电阻或TVS，这里只介绍其中一种，即串联一个NTC热敏电阻，如图2所示，把热敏电阻装置串联于电子设备的输入端，起到接插件连接瞬间防浪涌的作用。这样在更换模组时，不会因浪涌影响系统的工作，提高了可靠性。 There are many traditional solutions, such as connecting a thermistor in series between the power supply system and the module, or connecting a varistor or TVS in parallel at both ends of the power supply system. Only one of them is introduced here, that is, an NTC thermistor in series, such as As shown in Figure 2, the thermistor device is connected in series to the input end of the electronic equipment, which plays the role of anti-surge when the connector is connected. In this way, when the module is replaced, the work of the system will not be affected by the surge, which improves the reliability. the

对于应用到电池上的产品，因为电池相当于一个很大很大的电容，所以也会出现上述的问题。现有方案也是在电池和模组之间串联一个NTC热敏电阻，或者模组输入端的陶瓷电容换成电解电容，因为陶瓷电容的浪涌电流更大，或者模组输入端接的是陶瓷电容串联一个小电阻。 For products applied to batteries, because the battery is equivalent to a very large capacitor, the above-mentioned problems will also occur. The existing solution is to connect an NTC thermistor in series between the battery and the module, or replace the ceramic capacitor at the input end of the module with an electrolytic capacitor, because the inrush current of the ceramic capacitor is larger, or the input end of the module is connected to a ceramic capacitor Connect a small resistor in series. the

如果电池与模组中间串联了NTC热敏电阻，NTC会有一个较大的电阻，而模组工作时如果电流较大，在NTC会有一个较大的损耗，那么会使电池容量使用效率大大降低。串联热敏电阻也影响模组的电压检测精度，而有些电池系统对电压检测精度要求高，比如假设NTC正常工作后电阻30mΩ，模组工作电流为2A，那么在这个NTC热敏电阻上的压降就有60mV，对于有些电池系统来说这个采样误差的值是不能接受的。还有如果将模组的输入端换成电解电容，因为有些电池系统是高频开关变换器，电解电容的高频滤波效果很差；如果将模组的输入端改成陶瓷电容串联一个小电阻，那么会影响滤波效果，开关纹波的吸收能力变差。 If an NTC thermistor is connected in series between the battery and the module, the NTC will have a large resistance, and if the current of the module is large, there will be a large loss in the NTC, which will greatly increase the efficiency of the battery capacity. reduce. The series thermistor also affects the voltage detection accuracy of the module, and some battery systems require high voltage detection accuracy. For example, assuming that the resistance of the NTC is 30mΩ after normal operation, and the working current of the module is 2A, then the voltage on the NTC thermistor For some battery systems, the value of this sampling error is unacceptable. Also, if the input terminal of the module is replaced by an electrolytic capacitor, because some battery systems are high-frequency switching converters, the high-frequency filtering effect of the electrolytic capacitor is very poor; if the input terminal of the module is replaced by a ceramic capacitor in series with a small resistor , then the filtering effect will be affected, and the absorbing ability of the switching ripple will become worse. the

发明内容Contents of the invention

本实用新型提供了一种提高系统可靠性、大大增加了电池系统效率、方便维修的基于热插拔芯片的电池系统防浪涌电路。 The utility model provides a battery system anti-surge circuit based on a hot-swappable chip, which improves system reliability, greatly increases battery system efficiency, and facilitates maintenance. the

本实用新型采用的技术方案是： The technical scheme that the utility model adopts is:

基于热插拔芯片的电池系统防浪涌电路，其连接在模组与电池正极连接的输入端上，其特征在于：包括连接在模组的输入端的MOS管，所述MOS管上连接有控制其导通关断的热插拔芯片，所述热插拔芯片包括用于检测流经MOS管电流值的检测电路，所述检测电路与接收其发送的电流值并与预设防浪涌电流值比较输出控制信号的控制电路连接，所述控制电路上连接有由其控制驱动MOS管导通关断的驱动电路，当检测电路检测到的电流值大于预设防浪涌电流值时，所述控制电路输出关断MOS管的控制信号给驱动电路，驱动电路关断MOS管，当检测电路检测到的电流值小于预设防浪涌电流值时，所述控制电路输出导通MOS管的控制信号给驱动电路，驱动电路导通MOS管。模组与电池连接时，即上电初期，流经MOS管的电流会很大，控制电路输出一关断MOS管的控制信号给驱动电路，驱动电路关断MOS管，即通过减小MOS管Vgs的电压让MOS管的漏源极之间的电阻很大，从而限制浪涌电流，慢慢的等模组的输入端电容电压接近电池电压时，此时流经MOS管的电流会慢慢减小，所述控制电路输出导通MOS管的控制信号给驱动电路，驱动电路导通MOS管，即增大MOS管的Vgs电压，让MOS管的漏源极彻底导通，这样就可以让瞬间的浪涌电流限制在一个较低的水平，从而实现了具有防浪涌技术的电池系统，提高系统可靠性、大大增加了电池系统效率、方便维修。The anti-surge circuit of the battery system based on the hot-swappable chip is connected to the input terminal connected to the positive electrode of the module and the battery, and is characterized in that it includes a MOS tube connected to the input terminal of the module, and the MOS tube is connected with a control It is a hot-swappable chip that is turned on and off. The hot-swappable chip includes a detection circuit for detecting the current value flowing through the MOS tube. The detection circuit receives the current value sent by it and is connected with the preset anti-surge current The value comparison output control signal is connected to the control circuit, and the control circuit is connected to a drive circuit that controls and drives the MOS tube to turn on and off. When the current value detected by the detection circuit is greater than the preset anti-surge current value, the The control circuit outputs a control signal to turn off the MOS tube to the drive circuit, and the drive circuit turns off the MOS tube. When the current value detected by the detection circuit is less than the preset anti-surge current value, the control circuit outputs a signal to turn on the MOS tube. The control signal is given to the driving circuit, and the driving circuit turns on the MOS tube. When the module is connected to the battery, that is, at the initial stage of power-on, the current flowing through the MOS tube will be very large, and the control circuit outputs a control signal to turn off the MOS tube to the drive circuit, and the drive circuit turns off the MOS tube, that is, by reducing the MOS tube The voltage of Vgs makes the resistance between the drain and source of the MOS tube very large, thereby limiting the inrush current. When the capacitor voltage at the input terminal of the module is close to the battery voltage, the current flowing through the MOS tube will gradually decrease. decrease, the control circuit outputs a control signal to turn on the MOS tube to the drive circuit, and the drive circuit turns on the MOS tube, that is, increases the Vgs voltage of the MOS tube, so that the drain and source of the MOS tube are completely turned on, so that the The instantaneous surge current is limited to a low level, thereby realizing a battery system with anti-surge technology, improving system reliability, greatly increasing battery system efficiency, and facilitating maintenance.

进一步，所述检测电路并联在MOS管的漏源极上。检测电路检测MOS管漏源极电压，在MOS管内阻已知的前提下，根据欧姆定律可以计算出流经MOS管电流值。 Further, the detection circuit is connected in parallel to the drain and source of the MOS transistor. The detection circuit detects the drain-source voltage of the MOS tube. On the premise that the internal resistance of the MOS tube is known, the current value flowing through the MOS tube can be calculated according to Ohm's law. the

或者，所述MOS管上串联有采样电阻，所述检测电路并联在采样电阻上。检测电路检测采样电阻两端的电压，根据欧姆定律可以计算出流经MOS管电流值。 Alternatively, a sampling resistor is connected in series with the MOS transistor, and the detection circuit is connected in parallel with the sampling resistor. The detection circuit detects the voltage across the sampling resistor, and the current value flowing through the MOS tube can be calculated according to Ohm's law. the

进一步，所述热插拔芯片的驱动电路与MOS管的栅极连接。 Further, the drive circuit of the hot-swappable chip is connected to the gate of the MOS transistor. the

进一步，所述电池是由多节电池串联形成，所述模组与每节电池正极连接的输入端均设有防浪涌电路。 Further, the battery is formed by a plurality of batteries connected in series, and the input end of the module connected to the positive pole of each battery is provided with an anti-surge circuit. the

本实用新型的有益效果：通过热插拔芯片来检测流经MOS管的电流值，再通过比较该电流值与预设防浪涌电流值的大小，来控制MOS管的导通或关断，来限制模组与电池连接的浪涌电流，提高系统可靠性、大大增加了电池系统效率、方便维修。 The beneficial effects of the utility model: detect the current value flowing through the MOS tube by hot-swapping the chip, and then control the conduction or shutdown of the MOS tube by comparing the current value with the preset anti-surge current value. To limit the inrush current connected between the module and the battery, improve system reliability, greatly increase the efficiency of the battery system, and facilitate maintenance. the

附图说明Description of drawings

图1是热插拔过程示意图。 Figure 1 is a schematic diagram of the hot swap process. the

图2是传统防浪涌技术的结构示意图。 FIG. 2 is a schematic structural diagram of a traditional anti-surge technology. the

图3是本实用新型的一种结构示意图。 Fig. 3 is a structural schematic diagram of the utility model. the

图4是本实用新型的另一种结构示意图。 Fig. 4 is another structural schematic diagram of the utility model. the

具体实施方式Detailed ways

下面结合具体实施例来对本实用新型进行进一步说明，但并不将本实用新型局限于这些具体实施方式。本领域技术人员应该认识到，本实用新型涵盖了权利要求书范围内所可能包括的所有备选方案、改进方案和等效方案。 The utility model will be further described below in conjunction with specific embodiments, but the utility model is not limited to these specific embodiments. Those skilled in the art should realize that the present invention covers all alternatives, improvements and equivalents that may be included within the scope of the claims. the

实施例一 Embodiment one

参照图3，基于热插拔芯片的电池系统防浪涌电路，其连接在模组1与电池2正极连接的输入端上，包括连接在模组1的输入端的MOS管3，所述MOS管3上连接有控制其导通关断的热插拔芯片4，所述热插拔芯片4包括用于检测流经MOS管3电流值的检测电路41，所述检测电路41与接收其发送的电流值并与预设防浪涌电流值比较输出控制信号的控制电路42连接，所述控制电路42上连接有由其控制驱动MOS管3导通关断的驱动电路43，当检测电路41检测到的电流值大于预设防浪涌电流值时，所述控制电路42输出关断MOS管的控制信号给驱动电路43，驱动电路43关断MOS管3，当检测电路41检测到的电流值小于预设防浪涌电流值时，所述控制电路42输出导通MOS管3的控制信号给驱动电路43，驱动电路43导通MOS管3。模组1与电池2连接时，即上电初期，流经MOS管3的电流会很大，控制电路42输出一关断MOS管3的控制信号给驱动电路43，驱动电路43关断MOS管3，即通过减小MOS管3Vgs的电压让MOS管3的漏源极之间的电阻很大，从而限制浪涌电流，慢慢的等模组2的输入端电容电压接近电池1电压时，此时流经MOS管3的电流会慢慢减小，所述控制电路42输出导通MOS管3的控制信号给驱动电路43，驱动电路43导通MOS管3，即增大MOS管3的Vgs电压，让MOS管3的漏源极彻底导通，这样就可以让瞬间的浪涌电流限制在一个较低的水平，从而实现了具有防浪涌技术的电池系统，提高系统可靠性、大大增加了电池系统效率、方便维修。本实施例中的电池2是由   n个电池组成，n可以是1，2，3. . . 等。Referring to Fig. 3, the anti-surge circuit of the battery system based on the hot-swappable chip is connected to the input terminal connected to the positive pole of the module 1 and the battery 2, and includes a MOS tube 3 connected to the input terminal of the module 1, and the MOS tube 3 is connected with a hot-swappable chip 4 that controls its on-off, and the hot-swappable chip 4 includes a detection circuit 41 for detecting the current value flowing through the MOS tube 3. The current value is connected with the control circuit 42 that compares the output control signal with the preset anti-surge current value. The control circuit 42 is connected with a drive circuit 43 that controls and drives the MOS transistor 3 to turn on and off. When the detection circuit 41 detects When the received current value is greater than the preset anti-surge current value, the control circuit 42 outputs a control signal to turn off the MOS tube to the drive circuit 43, and the drive circuit 43 turns off the MOS tube 3. When the current value detected by the detection circuit 41 When it is less than the preset anti-surge current value, the control circuit 42 outputs a control signal for turning on the MOS transistor 3 to the driving circuit 43 , and the driving circuit 43 turns on the MOS transistor 3 . When the module 1 is connected to the battery 2, that is, at the initial stage of power-on, the current flowing through the MOS tube 3 will be very large, and the control circuit 42 outputs a control signal to turn off the MOS tube 3 to the driving circuit 43, and the driving circuit 43 turns off the MOS tube 3. By reducing the voltage of the MOS transistor 3Vgs, the resistance between the drain and the source of the MOS transistor 3 is very large, thereby limiting the inrush current, and slowly waiting for the voltage of the input capacitor of the module 2 to approach the voltage of the battery 1, At this time, the current flowing through the MOS transistor 3 will gradually decrease, and the control circuit 42 outputs a control signal for turning on the MOS transistor 3 to the driving circuit 43, and the driving circuit 43 turns on the MOS transistor 3, that is, increases the power of the MOS transistor 3 The Vgs voltage makes the drain and source of the MOS tube 3 completely turned on, so that the instantaneous surge current can be limited to a low level, thereby realizing a battery system with anti-surge technology, improving system reliability, and greatly Increased battery system efficiency, easy maintenance. The battery 2 in this embodiment is composed of n batteries, and n can be 1, 2, 3. . .

本实施例所述检测电路41并联在MOS管3的漏源极上。检测电路41检测MOS管3漏源极电压，在MOS管3内阻已知的前提下，根据欧姆定律可以计算出流经MOS管3电流值。也可以在所述MOS管3上串联有采样电阻，所述检测电路41并联在采样电阻上。检测电路41检测采样电阻两端的电压，根据欧姆定律可以计算出流经MOS管电流值。 The detection circuit 41 in this embodiment is connected in parallel to the drain and source of the MOS transistor 3 . The detection circuit 41 detects the drain-source voltage of the MOS transistor 3 , and on the premise that the internal resistance of the MOS transistor 3 is known, the current value flowing through the MOS transistor 3 can be calculated according to Ohm's law. A sampling resistor may also be connected in series with the MOS transistor 3, and the detection circuit 41 may be connected in parallel with the sampling resistor. The detection circuit 41 detects the voltage across the sampling resistor, and the current value flowing through the MOS tube can be calculated according to Ohm's law. the

本实施例所述热插拔芯片4的驱动电路43与MOS管3的栅极连接。 The driving circuit 43 of the hot-swappable chip 4 in this embodiment is connected to the gate of the MOS transistor 3 . the

本实用新型通过热插拔芯片4来检测流经MOS管3的电流值，再通过比较该电流值与预设防浪涌电流值的大小，来控制MOS管3的导通或关断，来限制模组1与电池2连接的浪涌电流。 The utility model detects the current value flowing through the MOS tube 3 through the hot-swappable chip 4, and then controls the conduction or shutdown of the MOS tube 3 by comparing the current value with the preset anti-surge current value. Limit the inrush current connected between module 1 and battery 2. the

实施例二 Example two

参照图4，本实施例与实施例一的不同之处在于：所述电池2是由多节电池2串联形成，所述模组1与每节电池2正极连接的输入端均设有防浪涌电路。本实施例中的每节电池2均是由    n个电池组成，n可以是1，2，3. . . 等。本实施例的模组1中有三个输入支路，只要选择两路设计防浪涌电路，就可以防止接插件连接瞬间有大电流回路的可能。通过电池2的VM和VP端与模组1之间各串联一个MOS管3来实现防浪涌技术，同理，如果VP以上继续串联电池的话，我们的防浪涌电路只要一路一路加上去就好。根据电流的设定值来控制MOS管3的工作状态，上电初期，通过减小MOS管Vgs的电压让MOS管的漏源极之间的电阻很大，从而限制浪涌电流，慢慢的等模组的输入端电容电压接近电池电压时，增大MOS管的Vgs电压，让MOS管的漏源极彻底导通，这样就可以让瞬间的浪涌电流限制在一个较低的水平，从而实现了具有防浪涌技术的高效率电池系统。其余结构和功能均与实施例一相同。Referring to Fig. 4, the difference between this embodiment and the first embodiment is that the battery 2 is formed by a plurality of batteries 2 connected in series, and the input end of the module 1 connected to the positive pole of each battery 2 is equipped with anti-wave surge circuit. Each battery 2 in this embodiment is composed of n batteries, and n can be 1, 2, 3 . . . There are three input branches in the module 1 of this embodiment, as long as two circuits are selected to design anti-surge circuits, it is possible to prevent the possibility of large current loops at the instant of connector connection. The anti-surge technology is realized by connecting a MOS transistor 3 in series between the VM and VP terminals of the battery 2 and the module 1. Similarly, if the VP and above continue to be connected in series, our anti-surge circuit only needs to be added all the way. good. Control the working state of the MOS tube 3 according to the set value of the current. At the initial stage of power-on, by reducing the voltage of the MOS tube Vgs, the resistance between the drain and the source of the MOS tube is very large, thereby limiting the inrush current, and slowly When the capacitor voltage at the input terminal of the module is close to the battery voltage, increase the Vgs voltage of the MOS tube to completely conduct the drain-source of the MOS tube, so that the instantaneous surge current can be limited to a lower level, thereby A high-efficiency battery system with anti-surge technology is realized. The rest of the structures and functions are the same as those in Embodiment 1.

Claims (5)

1. based on the battery system anti-surge circuit of hot plug chip, it is connected on the input that module is connected with anode, it is characterized in that: the metal-oxide-semiconductor comprising the input being connected to module, described metal-oxide-semiconductor is connected with the hot plug chip controlling its conducting and turn off, described hot plug chip comprises for detecting the testing circuit flowing through metal-oxide-semiconductor current value, described testing circuit and reception its current value sent being connected with the control circuit that default Anti-surging current value ratio comparatively exports control signal, described control circuit is connected with the drive circuit being controlled driven MOS pipe conducting shutoff by it, when the current value that testing circuit detects is greater than default Anti-surging current value, described control circuit exports the control signal of shutoff metal-oxide-semiconductor to drive circuit, drive circuit turns off metal-oxide-semiconductor, when the current value that testing circuit detects is less than default Anti-surging current value, described control circuit exports the control signal of conducting metal-oxide-semiconductor to drive circuit, drive circuit conducting metal-oxide-semiconductor.

2., as claimed in claim 1 based on the battery system anti-surge circuit of hot plug chip, it is characterized in that: the drain-source that described testing circuit is connected in parallel on metal-oxide-semiconductor extremely goes up.

3., as claimed in claim 1 based on the battery system anti-surge circuit of hot plug chip, it is characterized in that: described metal-oxide-semiconductor is in series with sampling resistor, described testing circuit is connected in parallel on sampling resistor.

4. the battery system anti-surge circuit based on hot plug chip as described in one of claim 1 ~ 3, is characterized in that: the described drive circuit of hot plug chip is connected with the grid of metal-oxide-semiconductor.

5. as claimed in claim 4 based on the battery system anti-surge circuit of hot plug chip, it is characterized in that: described battery is connected by multiple batteries to be formed, and the input that described module is connected with every batteries positive pole is equipped with anti-surge circuit.