技术领域technical field
本实用新型的实施方式涉及一种发光装置以及发光装置的制造方法。Embodiments of the present utility model relate to a light emitting device and a manufacturing method of the light emitting device.
背景技术Background technique
作为使用于照明装置的发光装置，例如有一种发光装置，该发光装置具备，在与安装有LED(Light Emitting Diode，发光二极管)等半导体发光元件的面相反一侧的面形成有金属膜的基板、与金属部件锡焊连接的散热部件。在所述发光装置的制造方法中，在实施了将LED芯片等安装于基板的工序之后，执行使用树脂在半导体的周围形成边框的工序。并且，在发光装置的制造方法中，在形成边框的工序之后，进行在边框所形成的空间内填充用于封固半导体发光元件的树脂即包含荧光体的树脂的工序。并且，在发光装置的制造方法中，在填充树脂的工序之后，进行使树脂硬化的工序。As a light-emitting device used in a lighting device, for example, there is a light-emitting device including a substrate on which a metal film is formed on a surface opposite to a surface on which a semiconductor light-emitting element such as an LED (Light Emitting Diode, light-emitting diode) is mounted. , Heat dissipation components connected by soldering with metal components. In the method of manufacturing the light-emitting device, after the step of mounting the LED chip or the like on the substrate, the step of forming a frame around the semiconductor using a resin is performed. In addition, in the manufacturing method of the light emitting device, after the step of forming the frame, the step of filling the space formed by the frame with a resin for sealing the semiconductor light emitting element, that is, a resin containing phosphor is performed. In addition, in the method of manufacturing the light-emitting device, after the step of filling the resin, the step of curing the resin is performed.
然而，在将基板安装于LED芯片的工序中，存在基板已经弯曲的情况。并且，存在与边框接触的部分的树脂的厚度因表面张力而厚于中央部分的厚度的情况。因此，在利用上述制造方法而制造出的发光装置中，存在设置于边框所形成的空间内的树脂的厚度在基板上的每个位置不同的情况。如此，有时在同一发光装置中产生树脂的厚度不一致的情况。树脂厚度的不一致可能成为颜色不均的原因。However, in the process of mounting the substrate on the LED chip, the substrate may already be bent. In addition, the thickness of the resin at the portion in contact with the bezel may be thicker than the thickness of the central portion due to surface tension. Therefore, in the light-emitting device manufactured by the above-described manufacturing method, the thickness of the resin provided in the space formed by the bezel may vary from position to position on the substrate. In this way, the thickness of the resin may not be uniform in the same light-emitting device. Inconsistencies in resin thickness may be the cause of color unevenness.
专利文献1：日本特开2012-84733号公报Patent Document 1: Japanese Patent Laid-Open No. 2012-84733
发明内容Contents of the invention
本实用新型要解决问题在于提供一种能够抑制颜色不均的产生的发光装置以及发光装置的制造方法。The problem to be solved by the present invention is to provide a light-emitting device capable of suppressing color unevenness and a method of manufacturing the light-emitting device.
实施方式的发光装置具备：基板、半导体发光元件、边框、封固树脂。半导体发光元件安装于基板的预定的面。边框形成于半导体发光元件的周围且预定面上。封固树脂以覆盖半导体发光元件的方式形成于由边框形成的空间内，且包含将半导体发光元件放射出的光转换为波长与光的波长不同的光的荧光体。在实施方式的发光装置中，从预定面开始的边框的第二高度与封固树脂的中央部分的从预定面开始的第一高度的第一比值为0.98以上且1.13以下，并且，第一高度与封固树脂的与边框接触的部分的从预定面开始的第三高度的第二比值为0.86以上且1.17以下。A light emitting device according to an embodiment includes a substrate, a semiconductor light emitting element, a frame, and a sealing resin. The semiconductor light emitting element is mounted on a predetermined surface of the substrate. The frame is formed around and on a predetermined surface of the semiconductor light emitting element. The sealing resin is formed in a space formed by the frame so as to cover the semiconductor light emitting element, and contains a phosphor that converts light emitted from the semiconductor light emitting element into light having a wavelength different from that of the light. In the light-emitting device of the embodiment, the first ratio of the second height of the frame from the predetermined surface to the first height of the central portion of the sealing resin from the predetermined surface is 0.98 or more and 1.13 or less, and the first height The second ratio of the third height from the predetermined surface of the portion of the sealing resin that is in contact with the frame is 0.86 or more and 1.17 or less.
根据实施方式的发光装置的制造方法，能够期待能够抑制颜色不均的产生的效果。According to the manufacturing method of the light-emitting device of the embodiment, the effect of suppressing the occurrence of color unevenness can be expected.
附图说明Description of drawings
图1A是例示第一实施方式所涉及的发光装置以及照明装置的示意图。FIG. 1A is a schematic diagram illustrating a light emitting device and a lighting device according to the first embodiment.
图1B是例示第一实施方式所涉及的发光装置以及照明装置的示意图。FIG. 1B is a schematic diagram illustrating a light emitting device and a lighting device according to the first embodiment.
图1C是例示第一实施方式所涉及的发光装置以及照明装置的示意图。FIG. 1C is a schematic diagram illustrating a light emitting device and a lighting device according to the first embodiment.
图2是用于说明反射层的高度比的一例的图。FIG. 2 is a diagram illustrating an example of a height ratio of a reflective layer.
图3是用于说明第一实施方式所涉及的波长转换层的形状的一例的图。FIG. 3 is a diagram illustrating an example of the shape of the wavelength conversion layer according to the first embodiment.
图4是用于说明第一实施方式所涉及的波长转换层的形状的其他例子的图。FIG. 4 is a diagram illustrating another example of the shape of the wavelength conversion layer according to the first embodiment.
图5A是表示发光装置的制造方法的一例的流程图。FIG. 5A is a flowchart illustrating an example of a method of manufacturing a light emitting device.
图5B是表示发光装置的制造方法的一例的流程图。FIG. 5B is a flowchart illustrating an example of a method of manufacturing a light emitting device.
图6A是用于说明实验1的图。FIG. 6A is a diagram for explaining Experiment 1. FIG.
图6B是用于说明实验1的图。FIG. 6B is a diagram for explaining Experiment 1. FIG.
图7是用于说明第一实施方式的变形例的图。FIG. 7 is a diagram for explaining a modified example of the first embodiment.
图8是用于说明第二实施方式所涉及的发光装置的图。FIG. 8 is a diagram for explaining a light emitting device according to a second embodiment.
图中：10-陶瓷基板，12-金属层，20-半导体发光元件，31-波长转换层，51-散热板，52-接合层，110-发光装置。In the figure: 10—ceramic substrate, 12—metal layer, 20—semiconductor light emitting element, 31—wavelength conversion layer, 51—radiating plate, 52—bonding layer, 110—light emitting device.
具体实施方式Detailed ways
以下，参照附图说明各实施方式。另外，附图为示意性的或者概念性的，各部分的厚度和宽度的关系、各部分之间的大小比例等并未限定成与实际相同。并且，即使表示相同的部分，根据附图有时也以相互不同的尺寸或比例来表现。另外，在本申请说明书和各图中，对与已通过附图叙述的元素相同的元素标注相同的符号并适当省略详细的说明。Hereinafter, each embodiment will be described with reference to the drawings. In addition, the drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between each part, and the like are not limited to be the same as the actual ones. Also, even if the same parts are shown, they may be shown in different sizes or ratios depending on the drawings. In addition, in this-application specification and each drawing, the same code|symbol is attached|subjected to the same element as what was already described by drawing, and detailed description is abbreviate|omitted suitably.
(第一实施方式)(first embodiment)
图1A～图1C是例示第一实施方式所涉及的发光装置以及照明装置的示意图。图1A为俯视图。图1B为例示图1A的沿A1-A2线的剖面的局部的剖视图。如图1A以及图1B所示，本实施方式所涉及的发光装置110包括：基体部件71、润滑脂层53、散热板51、接合层52、安装基板部15、多个半导体发光元件20。发光装置110例如使用于投光器等的照明装置210。1A to 1C are schematic diagrams illustrating a light emitting device and a lighting device according to the first embodiment. Figure 1A is a top view. FIG. 1B is a partial cross-sectional view illustrating a cross-section along line A1 - A2 in FIG. 1A . As shown in FIGS. 1A and 1B , a light emitting device 110 according to this embodiment includes a base member 71 , a grease layer 53 , a heat sink 51 , a bonding layer 52 , a mounting substrate portion 15 , and a plurality of semiconductor light emitting elements 20 . The light emitting device 110 is used, for example, in an illuminating device 210 such as a light projector.
将从基体部件71朝向安装基板部15的方向设为层叠方向(Z轴方向)。将与Z轴方向垂直的1个方向设为X轴方向。将与Z轴方向和X轴方向垂直的方向设为Y轴方向。Let the direction from the base member 71 toward the mounting substrate portion 15 be the stacking direction (Z-axis direction). Let one direction perpendicular to the Z-axis direction be the X-axis direction. Let the direction perpendicular to the Z-axis direction and the X-axis direction be the Y-axis direction.
在基体部件71上依次配置有润滑脂层53、散热板51、接合层52、安装基板部15、以及多个半导体发光元件20。On the base member 71 , the grease layer 53 , the heat dissipation plate 51 , the bonding layer 52 , the mounting substrate portion 15 , and the plurality of semiconductor light emitting elements 20 are sequentially arranged.
即，多个半导体发光元件20与基体部件71在Z轴方向上分开。安装基板部15包括陶瓷基板10。陶瓷基板10具有上表面10ue。在陶瓷基板10中，例如将由陶瓷、或者陶瓷和树脂的复合陶瓷等形成的部件作为基材。作为陶瓷例如使用氧化铝(Al2O3)、氮化铝(AlN)、氧化铍(BeO)、块滑石(MgO·SiO2)、锆石(ZrSiO4)、或者，氮化硅(Si3N4)等。陶瓷基板10设置于基体部件71和多个半导体发光元件20之间。散热板51设置于基体部件71和安装基板部15之间。That is, the plurality of semiconductor light emitting elements 20 are separated from the base member 71 in the Z-axis direction. The mounting substrate portion 15 includes the ceramic substrate 10 . The ceramic substrate 10 has an upper surface 10ue. In the ceramic substrate 10 , for example, a member made of ceramics or composite ceramics of ceramics and resin is used as a base material. As ceramics, for example, aluminum oxide (Al2 O3 ), aluminum nitride (AlN), beryllium oxide (BeO), steatite (MgO·SiO2 ), zircon (ZrSiO4 ), or silicon nitride (Si3 N4 ) etc. The ceramic substrate 10 is provided between the base member 71 and the plurality of semiconductor light emitting elements 20 . The heat dissipation plate 51 is provided between the base member 71 and the mounting substrate portion 15 .
如图1B例示，接合层52设置于安装基板部15和散热板51之间。接合层52接合安装基板部15和散热板51。As illustrated in FIG. 1B , the bonding layer 52 is provided between the mounting substrate portion 15 and the heat dissipation plate 51 . The bonding layer 52 bonds the mounting substrate portion 15 and the heat dissipation plate 51 .
润滑脂层53设置于基体部件71和散热板51之间。润滑脂层53将散热板51的热传递到基体部件71。The grease layer 53 is provided between the base member 71 and the heat dissipation plate 51 . The grease layer 53 transfers heat from the radiator plate 51 to the base member 71 .
以下，对图1A以及图1B所示的发光装置110(以及照明装置210)的例子进行说明。Hereinafter, an example of the light emitting device 110 (and the lighting device 210 ) shown in FIGS. 1A and 1B will be described.
在发光装置110中，设置有发光部40。发光部40设置在散热板51上。接合层52设置于散热板51和发光部40之间。In the light emitting device 110, a light emitting unit 40 is provided. The light emitting unit 40 is disposed on the heat dissipation plate 51 . The bonding layer 52 is provided between the heat dissipation plate 51 and the light emitting part 40 .
在本申请说明书中，“在元素A上设置有元素B的状态”是指除了直接在元素A上设置有元素B的状态之外，还包括在元素A和元素B之间插入有其他元素C的状态。In the description of this application, "the state where element B is set on element A" means that in addition to the state where element B is directly set on element A, it also includes other elements C inserted between element A and element B status.
从散热板51朝向发光部40的方向与层叠方向相对应。在本申请说明书中，“元素A和元素B层叠的状态”除了元素A和元素B直接接触而重叠状态之外，还包括在元素A和元素B之间插入有其他元素C而重叠的状态。The direction from the heat dissipation plate 51 toward the light emitting unit 40 corresponds to the stacking direction. In the specification of the present application, "the state where element A and element B are stacked" includes not only the state where element A and element B are in direct contact and overlapping, but also the state where element A and element B are overlapped with another element C interposed therebetween.
散热板51例如为板状。散热板51的主面例如与X-Y平面实质平行。散热板51的平面形状例如为矩形。散热板51例如具有第一边55a～第四边55d。第二边55b与第一边55a分开。第三边55c连接第一边55a的一端和第二边55b的一端。第四边55d与第三边55c分开，且连接第一边55a的另一端和第二边55b的另一端。散热板51的平面形状的角部也可以是曲线状。散热板51的平面形状也可以不是矩形，可以是任意形状。The radiator plate 51 is, for example, plate-shaped. The main surface of the heat sink 51 is substantially parallel to the X-Y plane, for example. The planar shape of the radiator plate 51 is, for example, a rectangle. The radiator plate 51 has, for example, a first side 55a to a fourth side 55d. The second side 55b is separated from the first side 55a. The third side 55c connects one end of the first side 55a and one end of the second side 55b. The fourth side 55d is separated from the third side 55c, and connects the other end of the first side 55a and the other end of the second side 55b. The corners of the planar shape of the radiator plate 51 may be curved. The planar shape of the heat sink 51 may not be a rectangle, but may be any shape.
散热板51例如使用由铜或铝等金属材料、或金属和陶瓷的复合材料等制成的基板。从防止部件的氧化或提高焊接沾附性，在散热板51的表面可以形成镀镍层等其他金属层。另外，散热板51是散热部件的一例。The heat dissipation plate 51 uses, for example, a substrate made of a metal material such as copper or aluminum, or a composite material of metal and ceramics. Other metal layers such as a nickel plating layer may be formed on the surface of the radiator plate 51 in order to prevent oxidation of components or improve solder adhesion. In addition, the heat dissipation plate 51 is an example of a heat dissipation member.
发光部40放射光且产生热量。接合层52将在发光部40所产生的热有效地传递到散热板51。接合层52例如包含焊锡等。例如，接合层52可以使用以锡为主要成分并且包含金、银、铜、铋、镍、铟、锌、锑、锗以及硅中的至少1种以上的焊锡。例如，使用SnAgCu合金等。并且，作为焊锡优选使用如下焊锡：例如，在后述的发光装置110的制造方法中的第2工序中，使向第一主面10a侧弯曲成凸状的陶瓷基板10变为平坦的状态时达到熔点的焊锡。The light emitting unit 40 emits light and generates heat. The bonding layer 52 efficiently transfers the heat generated in the light emitting unit 40 to the heat sink 51 . The bonding layer 52 includes, for example, solder or the like. For example, the bonding layer 52 may use solder containing tin as a main component and at least one of gold, silver, copper, bismuth, nickel, indium, zinc, antimony, germanium, and silicon. For example, a SnAgCu alloy or the like is used. In addition, it is preferable to use solder as the solder when, for example, the ceramic substrate 10 that is curved convexly toward the first main surface 10a is brought into a flat state in the second step of the manufacturing method of the light-emitting device 110 described later. Solder that has reached its melting point.
发光部40包括安装基板部15和发光元件部35。安装基板部15包括：陶瓷基板10、第一金属层11、第二金属层12。The light emitting unit 40 includes the mounting board unit 15 and the light emitting element unit 35 . The mounting substrate portion 15 includes: a ceramic substrate 10 , a first metal layer 11 , and a second metal layer 12 .
陶瓷基板10具有第一主面10a、第二主面10b。第二主面10b为与第一主面10a相反一侧的面。散热板51与陶瓷基板10的第二主面对置。即，第二主面10b为散热板51侧的面，也即接合层52侧的面。另外，第一主面10a为第一面的一例，第二主面10b为第二面的一例。The ceramic substrate 10 has a first main surface 10a and a second main surface 10b. The second main surface 10b is a surface opposite to the first main surface 10a. The heat dissipation plate 51 faces the second main surface of the ceramic substrate 10 . That is, the second main surface 10 b is a surface on the side of the heat sink 51 , that is, a surface on the side of the bonding layer 52 . In addition, the 1st main surface 10a is an example of a 1st surface, and the 2nd main surface 10b is an example of a 2nd surface.
在本申请说明书中，“元素A和元素B对置的状态”除了元素A和元素B直接面对的状态之外，还包括在元素A和元素B之间插入有其他元素C的状态。In the specification of the present application, "a state where element A and element B face each other" includes not only a state where element A and element B directly face each other, but also a state where another element C is inserted between element A and element B.
第一主面10a包括安装区域16。例如，安装区域16与第一主面10a的外缘10r相隔一定距离。在该例子中，安装区域16设置于第一主面10a的中央部分。第一主面10a还包括周围区域17。周围区域17是安装区域16周围的区域。The first main face 10 a includes a mounting region 16 . For example, the mounting area 16 is spaced a certain distance from the outer edge 10r of the first main surface 10a. In this example, the mounting area 16 is provided at the central portion of the first main surface 10a. The first main face 10 a also includes a surrounding region 17 . The surrounding area 17 is an area around the installation area 16 .
陶瓷基板10例如包含氧化铝。陶瓷基板10例如使用以氧化铝为主要成分的陶瓷。由此，能够得到高导热性、高绝缘性，从而能够获得高可靠性。The ceramic substrate 10 includes, for example, alumina. For the ceramic substrate 10 , for example, ceramics mainly composed of alumina are used. Thereby, high thermal conductivity and high insulation can be obtained, and high reliability can be obtained.
第一金属层11设置于第一主面10a上。第一金属层11包括多个安装图案11p。多个安装图案11p设置于安装区域16。多个安装图案11p中的至少任意2个以上互相分开。例如，多个安装图案11p中的至少任意一个呈岛状。多个安装图案11p例如包括第一安装图案11pa以及第二安装图案11pb等。The first metal layer 11 is disposed on the first main surface 10a. The first metal layer 11 includes a plurality of mounting patterns 11p. A plurality of mounting patterns 11p are provided in the mounting area 16 . At least arbitrary two or more of the plurality of mounting patterns 11p are separated from each other. For example, at least any one of the plurality of mounting patterns 11p has an island shape. The plurality of mounting patterns 11p include, for example, a first mounting pattern 11pa, a second mounting pattern 11pb, and the like.
多个安装图案11p例如分别包括第一安装部分11a和第二安装部分11b。在该例子中，安装图案11p还包括第三安装部分11c。第三安装部分11c设置于第一安装部分11a和第二安装部分11b之间，且连接第一安装部分11a和第二安装部分11b。The plurality of mounting patterns 11p include, for example, a first mounting portion 11a and a second mounting portion 11b, respectively. In this example, the mounting pattern 11p also includes a third mounting portion 11c. The third installation part 11c is disposed between the first installation part 11a and the second installation part 11b, and connects the first installation part 11a and the second installation part 11b.
第一金属层11还包括使多个安装图案11p彼此连接的连接部44。在本实施方式中，第一金属层11还包括第一连接器用电极部45e和第二连接器用电极部46e。第一连接器用电极部45e与多个安装图案11p中的1个电连接。第二连接器用电极部46e与多个安装图案11p中的与上述1个不同的另1个安装图案电连接。例如，在1个安装图案11p的一部分上配置有半导体发光元件20。通过该半导体发光元件20，第一连接器用电极部45e与1个安装图案11p电连接。并且，在另外1个安装图案11p的一部分上配置有半导体发光元件20。通过该半导体发光元件20，第二连接器用电极部46e与另外1个安装图案11p电连接。The first metal layer 11 also includes a connection part 44 connecting the plurality of mounting patterns 11p to each other. In this embodiment, the first metal layer 11 further includes a first connector electrode portion 45e and a second connector electrode portion 46e. The first connector electrode portion 45e is electrically connected to one of the plurality of mounting patterns 11p. The second connector electrode portion 46e is electrically connected to another mounting pattern different from the above-mentioned one among the plurality of mounting patterns 11p. For example, the semiconductor light emitting element 20 is arranged on a part of one mounting pattern 11p. With this semiconductor light emitting element 20, the first connector electrode portion 45e is electrically connected to one mounting pattern 11p. Furthermore, the semiconductor light emitting element 20 is arranged on a part of another mounting pattern 11p. Through this semiconductor light emitting element 20, the second connector electrode portion 46e is electrically connected to the other mounting pattern 11p.
在该例子中，发光部40还包括：设置于第一主面10a上的第一连接器45、第二连接器46。第一连接器45与第一连接器用电极部45e电连接。第二连接器46与第二连接器用电极部46e电连接。在本实施方式中，在第一连接器用电极部45e上设置有第一连接器45。在第二连接器用电极部46e上设置有第二连接器46。在第一连接器45和第二连接器46之间配置有发光元件部35。电力经由第一连接器45以及第二连接器46供给到发光部40。In this example, the light emitting unit 40 further includes: a first connector 45 and a second connector 46 disposed on the first main surface 10a. The first connector 45 is electrically connected to the first connector electrode portion 45e. The second connector 46 is electrically connected to the second connector electrode portion 46e. In the present embodiment, the first connector 45 is provided on the first connector electrode portion 45e. The second connector 46 is provided on the second connector electrode portion 46e. The light emitting element unit 35 is arranged between the first connector 45 and the second connector 46 . Electric power is supplied to the light emitting unit 40 via the first connector 45 and the second connector 46 .
第二金属层12设置于第二主面10b上。第二金属层12与第一金属层11电绝缘。第二金属层12的至少一部分在投影于X-Y平面(与第一主面10a平行的第一平面)的状态下，与安装区域16重叠。另外，第二金属层12是金属膜的一例。The second metal layer 12 is disposed on the second main surface 10b. The second metal layer 12 is electrically insulated from the first metal layer 11 . At least a part of the second metal layer 12 overlaps with the mounting region 16 when projected on the X-Y plane (first plane parallel to the first main surface 10 a ). In addition, the second metal layer 12 is an example of a metal film.
图1C是例示发光装置110的局部的透视俯视图。第二金属层12与外缘10r相隔一定距离。第二金属层12的平面形状例如为矩形。第二金属层12具有第一边12i～第四边12l。第二边12j与第一边12i分开。第三边12k连接第一边12i的一端和第二边12j的一端。第四边12l与第三边12k分开，且连接第一边12i的另一端和第二边12j的另一端。各边的交点即角部可以是曲线状(圆形)。第二金属层12的平面形状也可以不是矩形，可以是任意形状。FIG. 1C is a perspective top view illustrating a part of the light emitting device 110 . The second metal layer 12 is separated from the outer edge 10r by a certain distance. The plane shape of the second metal layer 12 is, for example, a rectangle. The second metal layer 12 has a first side 12i to a fourth side 12l. The second side 12j is separated from the first side 12i. The third side 12k connects one end of the first side 12i and one end of the second side 12j. The fourth side 12l is separated from the third side 12k, and connects the other end of the first side 12i and the other end of the second side 12j. The intersection point of each side, that is, the corner may be curved (circular). The plane shape of the second metal layer 12 may not be a rectangle, but may be any shape.
如此，在陶瓷基板10的上表面(第一主面10a)设置有第一金属层11，且在陶瓷基板10的下表面(第二主面10b)设置有第二金属层12。Thus, the first metal layer 11 is provided on the upper surface (first main surface 10 a ) of the ceramic substrate 10 , and the second metal layer 12 is provided on the lower surface (second main surface 10 b ) of the ceramic substrate 10 .
发光元件部35设置于陶瓷基板10的第一主面10a上。发光元件部35包括多个半导体发光元件20和波长转换层31。The light emitting element portion 35 is provided on the first main surface 10 a of the ceramic substrate 10 . The light emitting element section 35 includes a plurality of semiconductor light emitting elements 20 and a wavelength conversion layer 31 .
在本实施方式中，例如多个半导体发光元件20配置成阵列状。并且，半导体发光元件20例如配置成大致圆形形状。并且，半导体发光元件20例如以大致等间距配置。In this embodiment, for example, a plurality of semiconductor light emitting elements 20 are arranged in an array. Furthermore, the semiconductor light emitting element 20 is arranged in a substantially circular shape, for example. Furthermore, the semiconductor light emitting elements 20 are arranged, for example, at approximately equal pitches.
多个半导体发光元件20设置于第一主面10a上。多个半导体发光元件20分别放射光。半导体发光元件20例如包含氮化物半导体。半导体发光元件20例如包括InyAlzGa1-x-yN(0≤x≤1,0≤y≤1，x+y≤1)。但是，在本实施方式中，半导体发光元件20可以使用任意发光元件。A plurality of semiconductor light emitting elements 20 are disposed on the first main surface 10a. Each of the plurality of semiconductor light emitting elements 20 emits light. The semiconductor light emitting element 20 includes, for example, a nitride semiconductor. The semiconductor light emitting element 20 includes, for example, Iny Alz Ga1-xy N (0≤x≤1, 0≤y≤1, x+y≤1). However, in this embodiment, any light emitting element can be used as the semiconductor light emitting element 20 .
多个半导体发光元件20例如包括第一半导体发光元件20a以及第二半导体发光元件20b。The plurality of semiconductor light emitting elements 20 include, for example, a first semiconductor light emitting element 20a and a second semiconductor light emitting element 20b.
多个半导体发光元件20分别与多个安装图案11p中的任意一个的安装图案11p和多个安装图案11p中的与上述任意一个安装图案相邻的另一个安装图案11p电连接。The plurality of semiconductor light emitting elements 20 are respectively electrically connected to any one of the plurality of mounting patterns 11p and another mounting pattern 11p adjacent to any one of the plurality of mounting patterns 11p.
例如，第一半导体发光元件20a与多个安装图案11p中的第一安装图案11pa和第二安装图案11pb电连接。第二安装图案11pb相当于第一安装图案11pa的相邻的另一个安装图案11p。For example, the first semiconductor light emitting element 20a is electrically connected to the first mounting pattern 11pa and the second mounting pattern 11pb among the plurality of mounting patterns 11p. The second mounting pattern 11pb corresponds to another mounting pattern 11p adjacent to the first mounting pattern 11pa.
例如，多个半导体发光元件20分别包括：第一导电型的第一半导体层21、第二导电型的第二半导体层22、发光层23。例如，第一导电型为n型，第二导电型为p型。第一导电型也可以是p型，第二导电型也可以是n型。For example, the plurality of semiconductor light emitting elements 20 respectively include: a first semiconductor layer 21 of a first conductivity type, a second semiconductor layer 22 of a second conductivity type, and a light emitting layer 23 . For example, the first conductivity type is n-type, and the second conductivity type is p-type. The first conductivity type may also be p-type, and the second conductivity type may also be n-type.
第一半导体层21包括第一部分(第一半导体部分21a)和第二部分(第二半导体部分21b)。第二半导体部分21b在与层叠方向(从散热板51朝向发光部40的Z轴方向)交叉的方向(例如，X轴方向)上与第一半导体部分21a并排。The first semiconductor layer 21 includes a first portion (first semiconductor portion 21a) and a second portion (second semiconductor portion 21b). The second semiconductor portion 21b is aligned with the first semiconductor portion 21a in a direction (for example, the X-axis direction) intersecting the stacking direction (the Z-axis direction from the heat dissipation plate 51 toward the light emitting portion 40).
第二半导体层22设置于第二半导体部分21b和安装基板部15之间。发光层23设置于第二半导体部分21b和第二半导体层22之间。半导体发光元件20例如为倒装片式的LED。在将倒装片式的LED用作半导体发光元件20的情况下，半导体发光元件20的热从陶瓷基板10侧释放。因此，抑制半导体发光元件20的温度上升。The second semiconductor layer 22 is provided between the second semiconductor portion 21 b and the mounting substrate portion 15 . The light emitting layer 23 is disposed between the second semiconductor portion 21 b and the second semiconductor layer 22 . The semiconductor light emitting element 20 is, for example, a flip-chip LED. When a flip-chip LED is used as the semiconductor light emitting element 20, the heat of the semiconductor light emitting element 20 is released from the ceramic substrate 10 side. Therefore, the temperature rise of the semiconductor light emitting element 20 is suppressed.
例如，第一半导体层21的第一半导体部分21a与安装图案11p的第一安装部分11a对置。第二半导体层22与安装图案11p的第二安装部分11b对置。第一半导体层21的第一半导体部分21a与安装图案11p电连接。第二半导体层22与另一个安装图案11p电连接。该连接中例如使用导电性和导热系数高的焊锡或金隆起焊盘等。该连接例如通过金属熔融焊接来进行。或者，该连接例如通过使用金隆起焊盘的超声波热压接法来进行。For example, the first semiconductor portion 21a of the first semiconductor layer 21 is opposed to the first mounting portion 11a of the mounting pattern 11p. The second semiconductor layer 22 is opposed to the second mounting portion 11b of the mounting pattern 11p. The first semiconductor portion 21a of the first semiconductor layer 21 is electrically connected to the mounting pattern 11p. The second semiconductor layer 22 is electrically connected to another mounting pattern 11p. For this connection, for example, solder or gold bumps with high electrical and thermal conductivity are used. This connection takes place, for example, by metal fusion welding. Alternatively, the connection is made, for example, by ultrasonic thermocompression bonding using gold bumps.
在此，发光元件部35还包括第一接合金属部件21e和第二接合金属部件22e。第一接合金属部件21e设置于第一半导体部分21a和任意一个安装图案11p(例如第一安装部分11a)之间。第二接合金属部件22e设置于第二半导体层22和另一个安装图案11p(例如，第二安装图案11pb)之间。第一接合金属部件21e以及第二接合金属部件22e的至少一个包括焊锡或者金隆起焊盘。由此，能够加大第一接合金属部件21e以及第二接合金属部件22e各自的截面积(用X-Y平面剖切时的截面积)。由此，通过第一接合金属部件21e以及第二接合金属部件22e，能够将热有效地传递到安装基板部15，从而提高散热性。Here, the light emitting element portion 35 further includes a first bonding metal member 21e and a second bonding metal member 22e. The first bonding metal part 21e is disposed between the first semiconductor part 21a and any one of the mounting patterns 11p (for example, the first mounting part 11a). The second bonding metal part 22e is disposed between the second semiconductor layer 22 and another mounting pattern 11p (for example, the second mounting pattern 11pb). At least one of the first bonding metal part 21e and the second bonding metal part 22e includes solder or gold bumps. Thereby, the cross-sectional area (the cross-sectional area when cut along the X-Y plane) of each of the first metal joining member 21e and the second metal joining member 22e can be increased. Thereby, heat can be efficiently transmitted to the mounting board part 15 through the 1st metal joining member 21e and the 2nd metal joining member 22e, and heat dissipation improves.
另外，在半导体发光元件20和安装基板部15之间还可以设置其他金属层。由此，能够抑制第一金属层的氧化，且提高与焊锡之间的沾附性。该金属层不与半导体发光元件20以及安装图案11p电连接。该金属层与电路无关。In addition, another metal layer may be provided between the semiconductor light emitting element 20 and the mounting substrate portion 15 . Thereby, oxidation of the first metal layer can be suppressed, and adhesion to solder can be improved. This metal layer is not electrically connected to the semiconductor light emitting element 20 and the mounting pattern 11p. This metal layer has nothing to do with the circuit.
波长转换层31覆盖并密封多个半导体发光元件20。波长转换层31吸收从多个半导体发光元件20放射出的光(例如第一光)的至少一部分，放射第二光。第二光的波长(例如峰值波长)与第一光的波长(例如峰值波长)不同。波长转换层31例如包括：荧光体等多个波长转换粒子、分散有多个波长转换粒子的透光性树脂。第一光例如为蓝色光。第二光包括波长比第一光的光长的光。第二光例如为黄色光、赤色光以及绿色光的至少一个。波长转换层31是封固树脂的一例。在以下的说明中，有时将“波长转换层31”标记为“封固树脂31”。The wavelength conversion layer 31 covers and seals the plurality of semiconductor light emitting elements 20 . The wavelength conversion layer 31 absorbs at least part of the light (for example, first light) emitted from the plurality of semiconductor light emitting elements 20 and emits second light. The wavelength (eg, peak wavelength) of the second light is different from the wavelength (eg, peak wavelength) of the first light. The wavelength conversion layer 31 includes, for example, a plurality of wavelength conversion particles such as phosphors, and a translucent resin in which a plurality of wavelength conversion particles are dispersed. The first light is, for example, blue light. The second light includes light having a wavelength longer than that of the first light. The second light is, for example, at least one of yellow light, red light and green light. The wavelength conversion layer 31 is an example of a sealing resin. In the following description, the "wavelength conversion layer 31" may be referred to as the "sealing resin 31".
在本实施方式中，发光元件部35还包括反射层32。反射层32在X-Y平面内包围波长转换层31。反射层32例如包括：金属氧化物等多个粒子、分散有该粒子的透光性树脂。金属氧化物等粒子具有光反射性。作为该金属氧化物等的粒子例如能够使用TiO2以及Al2O3的至少任意一个。通过设置反射层32，从半导体发光元件20放射出的光能够有效地沿与层叠方向相同的方向(例如上方向)射出。另外，在本实施方式中，分散有荧光体等多个波长转换粒子的透光性树脂(封固树脂)填充且硬化在由反射层32以及安装基板部15形成的空间中，从而形成波长转换层31。因此，反射层32作为包围封固树脂的边框发挥作用，因而简单称之为边框或边框树脂等。在以下的说明中，有时将“反射层32”标记为“边框32”或“边框树脂32”等。In this embodiment, the light emitting element portion 35 further includes the reflective layer 32 . The reflection layer 32 surrounds the wavelength conversion layer 31 in the XY plane. The reflective layer 32 includes, for example, a plurality of particles such as metal oxide, and a translucent resin in which the particles are dispersed. Particles such as metal oxides are light reflective. At least any one of TiO2 and Al2 O3 can be used as the particles of the metal oxide or the like, for example. By providing the reflective layer 32, the light emitted from the semiconductor light emitting element 20 can be efficiently emitted in the same direction as the stacking direction (for example, the upward direction). In addition, in this embodiment, a light-transmitting resin (sealing resin) in which a plurality of wavelength conversion particles such as phosphors are dispersed is filled and hardened in the space formed by the reflective layer 32 and the mounting substrate portion 15, thereby forming a wavelength conversion channel. Layer 31. Therefore, since the reflective layer 32 functions as a frame surrounding the sealing resin, it is simply referred to as a frame or a frame resin. In the following description, "reflective layer 32" may be referred to as "frame 32" or "frame resin 32".
发光部40例如为板上芯片封装(COB)型的LED模块。The light emitting unit 40 is, for example, a chip-on-board (COB) type LED module.
在本实施方式中，从发光元件部35(多个半导体发光元件20)放射出的光的发光度为10lm/mm2(流明/平方毫米)以上且100lm/mm2以下。并且，优选为25lm/mm2以上。即，在本实施方式中，从发光元件部35放射出的光和发光面积之比(发光度)非常高。在本申请说明书中，发光面积实质上与安装区域16的面积相对应。In the present embodiment, the luminosity of light emitted from the light emitting element portion 35 (the plurality of semiconductor light emitting elements 20 ) is 10 lm/mm2 (lumen/square millimeter) or more and 100 lm/mm2 or less. Furthermore, it is preferably 25 lm/mm2 or more. That is, in the present embodiment, the ratio (luminosity) of the light emitted from the light emitting element portion 35 to the light emitting area is very high. In the specification of the present application, the light emitting area substantially corresponds to the area of the mounting region 16 .
润滑脂层53使用液态或者固态的润滑油(润滑脂)等。润滑脂层53例如可使用具有绝缘性的润滑油(绝缘性润滑脂)、或具有导电性的润滑油(导电性润滑脂)等。绝缘性润滑脂例如包括：硅酮和分散在该硅酮的陶瓷粒子。导电性润滑脂例如包括硅酮和分散于该硅酮的金属粒子。在导电性润滑脂中例如能够得到比绝缘性润滑脂更高的导热系数。例如，发光元件部35的热通过润滑脂层53传递到基体部件71，从而进行散热。For the grease layer 53, liquid or solid lubricating oil (grease) or the like is used. For the grease layer 53 , for example, insulating lubricating oil (insulating grease), conductive lubricating oil (conductive grease), or the like can be used. The insulating grease includes, for example, silicone and ceramic particles dispersed in the silicone. Conductive grease includes, for example, silicone and metal particles dispersed in the silicone. In conductive grease, for example, higher thermal conductivity than insulating grease can be obtained. For example, the heat of the light emitting element portion 35 is transferred to the base member 71 through the grease layer 53 to dissipate heat.
在本实施方式所涉及的发光装置110中，例如将散热板51投影于X-Y平面时，散热板51具有安装区域16的面积的5倍以上的面积。即，在本实施方式中，与安装区域16的面积相比，散热板51的面积设定为非常大。由此，使设置于安装区域16上的发光元件部35中产生的热通过面积大的散热板51向面内方向(X-Y面内方向)扩散。并且，在面内方向扩散的热例如向基体部件71传递，有效地进行散热。In the light emitting device 110 according to this embodiment, for example, when the heat sink 51 is projected on the X-Y plane, the heat sink 51 has an area five times or more the area of the mounting region 16 . That is, in the present embodiment, the area of the radiator plate 51 is set to be very large compared to the area of the mounting region 16 . Accordingly, the heat generated in the light emitting element portion 35 provided on the mounting region 16 is diffused in the in-plane direction (X-Y in-plane direction) through the large-area heat dissipation plate 51 . Furthermore, the heat diffused in the in-plane direction is transferred to, for example, the base member 71 to dissipate heat efficiently.
接着，对本实施方式所涉及的波长转换层31的高度比的一例进行说明。图2是用于说明反射层32的高度比的一例的图。如图2所示，将从第一主面10a开始的反射层32的高度设为“L1”(μm)。并且，将波长转换层31的与反射层32接触的部分的自第一主面10a起的高度设为“L2”(μm)。并且，将波长转换层31的中央部分的从第一主面10a开始的反射层32的高度设为“L3”(μm)。Next, an example of the height ratio of the wavelength conversion layer 31 according to this embodiment will be described. FIG. 2 is a diagram for explaining an example of the height ratio of the reflective layer 32 . As shown in FIG. 2 , the height of the reflective layer 32 from the first main surface 10 a is set to "L1" (μm). In addition, the height from the first main surface 10a of the portion of the wavelength conversion layer 31 that is in contact with the reflective layer 32 is defined as "L2" (μm). In addition, the height of the reflective layer 32 from the first main surface 10a in the central portion of the wavelength conversion layer 31 is set to "L3" (μm).
在本实施方式所涉及的发光装置110中，L1与L3之比(L1/L3)为0.98以上且1.13以下。并且，在本实施方式所涉及的发光装置110中，L3与L2之比(L3/L2)为0.86以上且1.17以下。即，在发光装置110中，波长转换层(封固树脂)31的厚度的偏差。由此，能够抑制颜色不均的产生。另外，L3为第一高度的一例，L1为第二高度的一例，L2为第三高度的一例。In the light-emitting device 110 according to this embodiment, the ratio (L1/L3) of L1 to L3 is 0.98 or more and 1.13 or less. In addition, in the light-emitting device 110 according to the present embodiment, the ratio of L3 to L2 (L3/L2) is not less than 0.86 and not more than 1.17. That is, in the light emitting device 110 , the thickness of the wavelength conversion layer (encapsulating resin) 31 varies. Thereby, occurrence of color unevenness can be suppressed. In addition, L3 is an example of the first height, L1 is an example of the second height, and L2 is an example of the third height.
另外，在L3与L2之比大于1的情况下，如图3的例子所示，波长转换层31的中央部分的从第一主面10a开始的高度高于波长转换层31的与反射层32接触的部分的从第一主面10a开始的高度。即，波长转换层31的形状成为所谓的圆顶形状。在此，有时出现从波长转换层31的出光面的中央部放射出的光的亮度亮于从出光面的端部放射出的光的亮度的情况。下面，对从中央部放射出的光变亮的理由的一例进行说明。从安装于安装区域16的中央部的半导体发光元件20放射出的光与从位于该半导体发光元件20周围的较多的半导体发光元件20放射出的光重叠。对此，从安装于安装区域16的中央部的半导体发光元件20放射出的光仅与从位于该半导体发光元件20的周围的少数的半导体发光元件20放射出的光重叠。由此，从中央部放射出的光变亮。在从中央部放射出的光变亮的情况下，通过将发光装置110设计成如下，发光装置110能够抑制颜色不均的产生：将L3与L2之比设为大于1的值，以使从出光面的中央部放射出的光的亮度和从出光面的端部放射出的光的亮度大致相同。In addition, when the ratio of L3 to L2 is greater than 1, as shown in the example of FIG. The height of the contacted part from the first main surface 10a. That is, the shape of the wavelength conversion layer 31 is a so-called dome shape. Here, the brightness of the light emitted from the central portion of the light emitting surface of the wavelength conversion layer 31 may be brighter than the brightness of light emitted from the end portions of the light emitting surface. Next, an example of the reason why the light emitted from the central portion becomes brighter will be described. The light emitted from the semiconductor light emitting element 20 mounted in the center of the mounting area 16 overlaps with the light emitted from many semiconductor light emitting elements 20 located around the semiconductor light emitting element 20 . In contrast, the light emitted from the semiconductor light emitting element 20 mounted in the center of the mounting region 16 overlaps only the light emitted from a small number of semiconductor light emitting elements 20 located around the semiconductor light emitting element 20 . Thereby, the light emitted from the central part becomes brighter. In the case where the light emitted from the central portion becomes brighter, the light emitting device 110 can suppress the occurrence of color unevenness by designing the light emitting device 110 such that the ratio of L3 to L2 is set to a value greater than 1 so that the The brightness of the light emitted from the central portion of the light emitting surface is substantially the same as the brightness of the light emitted from the end portions of the light emitting surface.
并且，在L3与L2之比为1的情况下，如图4的例子所示，波长转换层31的从第一主面10a开始的高度均为相同。因此，在该种情况下也能够抑制颜色不均的产生。Furthermore, when the ratio of L3 to L2 is 1, as shown in the example of FIG. 4 , the heights of the wavelength conversion layer 31 from the first main surface 10 a are all the same. Therefore, even in this case, occurrence of color unevenness can be suppressed.
接着，对本实施方式所涉及的发光装置110的制造方法的一例进行说明。图5A以及图5B是表示发光装置110的制造方法的一例的流程图。Next, an example of a method of manufacturing the light emitting device 110 according to this embodiment will be described. 5A and 5B are flowcharts illustrating an example of a method of manufacturing the light emitting device 110 .
如图5A所示，在第1工序(工序(1))中，将多个半导体发光元件20安装于陶瓷基板10的第一主面10a上。另外，在将半导体发光元件20安装于陶瓷基板10的时刻，有时存在陶瓷基板10向第一主面10a侧弯曲成凸状的情况。其原因可能是：陶瓷基板10的基材即陶瓷的线性热膨胀系数与第一金属层11、第二金属层12的线性热膨胀系数之差较大，第二金属层12的体积大于第一金属层11的体积，即在厚度大致相同的情况下，第二金属层12的面积大于第一金属层11的面积等。例如，陶瓷的线性热膨胀系数为7(ppm/K)左右，第一金属层11、第二金属层12的线性热膨胀系数为17～18(ppm/K)。As shown in FIG. 5A , in the first step (step (1)), a plurality of semiconductor light emitting elements 20 are mounted on the first main surface 10 a of the ceramic substrate 10 . In addition, when the semiconductor light emitting element 20 is mounted on the ceramic substrate 10, the ceramic substrate 10 may be curved convexly toward the first main surface 10a side. The reason may be: the base material of the ceramic substrate 10, that is, the difference between the linear thermal expansion coefficient of the ceramic and the linear thermal expansion coefficients of the first metal layer 11 and the second metal layer 12 is relatively large, and the volume of the second metal layer 12 is larger than that of the first metal layer. 11, that is, in the case of approximately the same thickness, the area of the second metal layer 12 is larger than the area of the first metal layer 11 and the like. For example, the linear thermal expansion coefficient of ceramics is about 7 (ppm/K), and the linear thermal expansion coefficients of the first metal layer 11 and the second metal layer 12 are 17-18 (ppm/K).
并且，在第2工序(工序(2))中，利用锡焊连接接合第二金属层12和散热板51。即，进行锡焊连接的结果，接合层52接合第二金属层12和散热板51。在此，在第2工序中，若通过锡焊连接第二金属层12受热，则第二金属层12膨胀。若第二金属层12膨胀，则向第一主面10a侧弯曲成凸状的陶瓷基板10变成大致平坦的状态。即，使陶瓷基板10平坦化。因此，在第2工序中，在陶瓷基板10处于平坦的状态时，通过锡焊连接接合第二金属层12和散热板51接合。如此，锡焊连接于第二金属层12的散热板51与平坦的状态的陶瓷基板10接合。并且，与陶瓷基板10或金属层等相比，散热板51为刚体，因此即使第二金属层12的温度变为常温，也将陶瓷基板10维持在平坦的状态。另外，第2工序为接合工序的一例。In addition, in the second step (step (2)), the second metal layer 12 and the radiator plate 51 are joined together by soldering. That is, as a result of the solder connection, the bonding layer 52 bonds the second metal layer 12 and the heat sink 51 . Here, in the second step, when the second metal layer 12 connected by soldering is heated, the second metal layer 12 expands. When the second metal layer 12 expands, the ceramic substrate 10 curved convexly toward the first principal surface 10 a becomes substantially flat. That is, the ceramic substrate 10 is planarized. Therefore, in the second step, when the ceramic substrate 10 is in a flat state, the second metal layer 12 and the radiator plate 51 are connected and joined by soldering. In this way, the heat dissipation plate 51 connected by soldering to the second metal layer 12 is bonded to the ceramic substrate 10 in a flat state. Furthermore, since the radiator plate 51 is a rigid body compared with the ceramic substrate 10 or the metal layer, the ceramic substrate 10 is maintained in a flat state even when the temperature of the second metal layer 12 becomes normal temperature. In addition, the second step is an example of a bonding step.
并且，在第3工序(工序(3))中，将边框树脂(反射层)32以包围多个半导体发光元件20的周围的方式形成于第一主面10a上，该边框树脂包括分散有金属氧化物等多个粒子的透光性树脂。并且，在第4工序(工序(4))中，使边框树脂32加热硬化。即，在第3工序中，在半导体发光元件20的周围形成树脂的边框，在第4工序中，使所形成的边框硬化。另外，第3工序以及第4工序是边框形成工序的一例。In addition, in the third step (step (3)), a frame resin (reflective layer) 32 is formed on the first main surface 10a so as to surround the plurality of semiconductor light emitting elements 20. The frame resin includes metal dispersed therein. Translucent resin with multiple particles such as oxides. Then, in the fourth step (step (4)), the frame resin 32 is cured by heating. That is, in the third step, a resin frame is formed around the semiconductor light emitting element 20, and in the fourth step, the formed frame is cured. In addition, the 3rd process and 4th process are an example of a frame forming process.
并且，在第5工序(工序(5))中，在第4工序中被硬化的边框内，将分散有荧光体等多个波长转换粒子的透光性树脂(封固树脂)80填充于由边框树脂32以及陶瓷基板10形成的空间内。在此，在第5工序填充的封固树脂80的量为：在后述的第6工序中硬化封固树脂80后，使L1与L3之比(L1/L3)成为0.98以上且1.13以下，L3与L2之比(L3/L2)成为0.86以上且1.17以下。另外，第5工序为填充工序的一例。Then, in the fifth step (step (5)), the frame hardened in the fourth step is filled with a translucent resin (sealing resin) 80 in which a plurality of wavelength conversion particles such as phosphors are dispersed. In the space formed by the frame resin 32 and the ceramic substrate 10 . Here, the amount of sealing resin 80 to be filled in the fifth step is such that the ratio of L1 to L3 (L1/L3) becomes 0.98 or more and 1.13 or less after curing the sealing resin 80 in a sixth step described later. The ratio (L3/L2) of L3 to L2 is 0.86 or more and 1.17 or less. In addition, the fifth step is an example of a filling step.
并且，图5B所示，在第6工序(工序(6))中，使封固树脂80硬化。由此，形成有波长转换层31。在第6工序中，由于使填充于平坦状态的陶瓷基板10的边框内的封固树脂80硬化，因此能够使封固树脂80硬化成L1与L3之比(L1/L3)为0.98以上且1.13以下，L3与L2之比(L3/L2)为0.86以上且1.17以下。因此，能够抑制封固树脂80的厚度的偏差，因此如后述的实验结果所示，能够抑制颜色不均的产生。另外，在第6工序中，在对封固树脂80进行硬化之前，也可以进行用于除去封固树脂80中的气泡的真空脱泡处理。由此，能够减少封固树脂80中残存的气泡的量。另外，第6工序为平坦化工序的一例。Then, as shown in FIG. 5B , in the sixth step (step (6)), the sealing resin 80 is cured. Thus, the wavelength conversion layer 31 is formed. In the sixth step, since the sealing resin 80 filled in the frame of the ceramic substrate 10 in a flat state is cured, the sealing resin 80 can be cured so that the ratio of L1 to L3 (L1/L3) becomes 0.98 or more and 1.13. Hereinafter, the ratio (L3/L2) of L3 and L2 is 0.86 or more and 1.17 or less. Therefore, variation in the thickness of the sealing resin 80 can be suppressed, and therefore, occurrence of color unevenness can be suppressed as shown in experimental results described later. In addition, in the sixth step, before curing the sealing resin 80 , vacuum defoaming treatment for removing air bubbles in the sealing resin 80 may be performed. Accordingly, the amount of air bubbles remaining in the sealing resin 80 can be reduced. In addition, the sixth step is an example of a planarization step.
并且，在第7工序(工序(7))中，将安装于陶瓷基板10的第一主面10a上的连接器46等其他部件(表面安装部件)进行安装。并且，在其后的工序中，在散热板51的与第二金属层12侧的面相反一侧的面形成有润滑脂层53，基体部件71设置在润滑脂层53的与散热板51侧的面相反一侧的面。In addition, in the seventh step (step (7)), other components (surface mount components) such as the connector 46 mounted on the first main surface 10 a of the ceramic substrate 10 are mounted. In addition, in the subsequent process, the grease layer 53 is formed on the surface of the radiator plate 51 opposite to the surface on the second metal layer 12 side, and the base member 71 is provided on the grease layer 53 on the radiator plate 51 side. The face on the opposite side of the face.
以上，对本实施方式所涉及的发光装置110的制造方法的一例进行了说明。另外，也可以在实施了第3工序以及第4工序之后实施第2工序。即，可以在半导体发光元件20的周围形成树脂的边框，并使所形成的边框硬化之后，通过锡焊连接接合第二金属层12和散热板51。An example of the method of manufacturing the light emitting device 110 according to this embodiment has been described above. Moreover, you may implement a 2nd process after implementing a 3rd process and a 4th process. That is, a resin frame may be formed around the semiconductor light emitting element 20, and the formed frame may be hardened, and then the second metal layer 12 and the heat dissipation plate 51 may be joined by soldering.
接着，对通过改变封固树脂80的填充量从而改变L1与L3之比、L3与L2之比时的来自发光装置110的光的照射面的相关色温度的变化的实验结果进行说明。在该实验(实验1)中，利用比色高温计测量了L3与L2之比为“2.57”且L1与L3之比为“0.43”的情况(第一情况)下的照射面的相关色温度。并且，在实验1中，也测量了L3与L2之比为“2.07”且L1与L3之比为“0.57”的情况(第二情况)下的照射面的相关色温度。并且，在实验1中，测量了L3与L2之比为“1.17”且L1与L3之比为“0.98”的情况(第三情况)下的照射面的相关色温度。并且，在实验1中，测量了L3与L2之比为“1.02”且L1与L3之比为“0.97”的情况(第四情况)下照射面的相关色温度。并且，在实验1中，测量了L3与L2之比为“0.86”且L1与L3之比为“1.13”的情况(第五情况)下的照射面的相关色温度。并且，在实验1中，测量了L3与L2之比为“0.8”且L1与L3之比为“1.19”的情况(第六情况)下的照射面的相关色温度。Next, experimental results of changes in the correlated color temperature of the light irradiation surface from the light emitting device 110 when the ratio of L1 to L3 and the ratio of L3 to L2 are changed by changing the filling amount of the sealing resin 80 will be described. In this experiment (Experiment 1), the correlated color temperature of the irradiated surface was measured with a colorimetric pyrometer when the ratio of L3 to L2 was "2.57" and the ratio of L1 to L3 was "0.43" (first case) . Also in Experiment 1, the correlated color temperature of the irradiated surface was measured in the case (second case) where the ratio of L3 to L2 was "2.07" and the ratio of L1 to L3 was "0.57". Also, in Experiment 1, the correlated color temperature of the irradiated surface was measured in the case (third case) where the ratio of L3 to L2 was "1.17" and the ratio of L1 to L3 was "0.98". Also, in Experiment 1, the correlated color temperature of the irradiated surface was measured in the case (fourth case) where the ratio of L3 to L2 was "1.02" and the ratio of L1 to L3 was "0.97". Also, in Experiment 1, the correlated color temperature of the irradiated surface was measured in the case (fifth case) where the ratio of L3 to L2 was "0.86" and the ratio of L1 to L3 was "1.13". Also, in Experiment 1, the correlated color temperature of the irradiated surface in the case (sixth case) in which the ratio of L3 to L2 was "0.8" and the ratio of L1 to L3 was "1.19" was measured.
在图6A中示出第二情况以及第五情况下的相关色温度的测定结果。在图6A中，横轴表示照射面的相对距离。并且，在图6A中，纵轴表示相关色温度。在此，照射面的相对距离是指：从来自发光装置110的光所照射的照射面上的预定位置开始向预定方向前进的位置与预定位置之间的距离。即，在图6A中示出在从照射面上的预定位置开始向预定方向前进的各位置中测定的相关色温度。The measurement results of the correlated color temperature in the second case and the fifth case are shown in FIG. 6A . In FIG. 6A , the horizontal axis represents the relative distance of the irradiated surface. Also, in FIG. 6A , the vertical axis represents correlated color temperature. Here, the relative distance of the irradiated surface refers to a distance between a predetermined position and a predetermined position advancing in a predetermined direction from a predetermined position on the irradiated surface irradiated by light from the light emitting device 110 . That is, FIG. 6A shows the correlated color temperature measured at each position proceeding in a predetermined direction from a predetermined position on the irradiation surface.
在图6A中，实线表示表示在第二情况下测定的相关色温度，虚线表示在第五情况下测定的相关色温度。从图6A的例子可知，第五情况比第二情况更能抑制颜色不均。In FIG. 6A , the solid line represents the correlated color temperature measured in the second case, and the dotted line represents the correlated color temperature measured in the fifth case. As can be seen from the example of FIG. 6A , the fifth case can suppress color unevenness better than the second case.
接着，分别对实验1的试验者(本申请的发明者们)用肉眼评价第一情况～第六情况下的颜色不均的结果进行说明。另外，实验者利用预定的光线系统(平凸透镜以及反射镜)，分别对从第一情况～第六情况下的从发光装置照射到照射面的光的颜色不均进行了评价。图6B是表示实验者对颜色不均的评价结果的图。在图6B中，“×”表示颜色非常不均的评价。并且，“△”表示颜色稍微不均的评价。并且，“○”表示完全不会感到颜色不均的评价。从图6B的例子可知，在第三情况～第五情况中，抑制了颜色不均的产生。因此，在L1与L3之比(L1/L3)为0.98以上且1.13以下，且L3与L2之比(L3/L2)为0.86以上且1.17以下的情况下，能够抑制颜色不均的产生。Next, the results of the testers (inventors of the present application) in Experiment 1 visually evaluating the color unevenness in the first to sixth cases will be described. In addition, the experimenters evaluated the color unevenness of the light irradiated from the light emitting device to the irradiated surface from the first case to the sixth case by using a predetermined optical system (plano-convex lens and reflector). Fig. 6B is a graph showing the evaluation results of color unevenness by the testers. In FIG. 6B , "x" indicates the evaluation that the color is very uneven. In addition, "Δ" indicates an evaluation that the color is slightly uneven. Moreover, "(circle)" shows the evaluation that color unevenness was not felt at all. As can be seen from the example of FIG. 6B , in the third case to the fifth case, the occurrence of color unevenness is suppressed. Therefore, when the ratio of L1 to L3 (L1/L3) is 0.98 to 1.13, and the ratio of L3 to L2 (L3/L2) is 0.86 to 1.17, occurrence of color unevenness can be suppressed.
接着，对实验者所进行的实验2进行说明。在通过金属(焊锡)将□1mm×0.1的倒装片式的LED接合在DPC(Direct Plated Copper，直接电镀铜)图案上的DPC基板上用可见光反射较高的树脂形成内径为32.8mm的堤部之后，在二甲基硅酮中混合并分散30重量％的荧光体，并将其涂布在堤部内，以使从基板面的高度成为0.35～0.5mm、相关色温度成为2950K。以相同方式，将混合有8重量％的荧光体的二甲基硅酮也涂布成从基板面的高度为0.35～0.4mm、相关色温度为2950K。之后，使热硬化后的模块的后表面和散热器之间夹住焊片而接合。将该模块利用高温导电性板等安装于半导体制冷片并使其点灯。此时设定半导体制冷片的温度以使封装体温度：Tc＝90度，并且使该模块点亮并用热观测仪测定稳定状态下的封固表面温度。Next, Experiment 2 performed by the experimenter will be described. A bank with an inner diameter of 32.8mm is formed on a DPC substrate with a 1mm×0.1 flip-chip LED bonded to a DPC (Direct Plated Copper) pattern by metal (soldering tin) using a resin with high visible light reflection. After the part, 30% by weight of phosphor was mixed and dispersed in dimethyl silicone, and applied in the bank so that the height from the substrate surface was 0.35 to 0.5 mm and the correlated color temperature was 2950K. In the same manner, dimethyl silicone mixed with 8% by weight of phosphor was also applied so that the height from the substrate surface was 0.35 to 0.4 mm and the correlated color temperature was 2950K. Thereafter, the thermally hardened rear surface of the module and the heat sink are bonded with the solder tab interposed therebetween. Mount this module on a peltier with a high-temperature conductive plate or the like and turn it on. At this time, set the temperature of the peltier so that the temperature of the package body: Tc=90 degrees, and light the module and measure the sealing surface temperature in a stable state with a thermal observer.
其结果，混合有荧光体的封固树脂的厚度为0.75mm时的封固温度为135度，而厚度为0.45mm时为125度。二甲基硅酮的长期耐热性尚不明确，但是可以明确的是越接近分解温度长期耐热性越劣化，因此希望最好为低温。As a result, the sealing temperature of the sealing resin mixed with phosphor was 135 degrees when the thickness was 0.75 mm, and was 125 degrees when the thickness was 0.45 mm. The long-term heat resistance of dimethyl silicone is not yet clear, but it is clear that the long-term heat resistance deteriorates as it gets closer to the decomposition temperature, so it is desirable to use a low temperature.
接着，对实验者所进行的实验3进行说明。实验者制作边框树脂的厚度与封固树脂的厚度0.35～0.4mm相同的COB和边框树脂的厚度与封固树脂的厚度0.65～0.7mm相同的COB，并将其安装于利用透镜聚光的器具，观察了照射面的结果，在0.65～0.7mm厚的边框的情况下，随着朝向芯片和边框之间或发光中心，相关色温度变高。然而，在0.35～0.5mm厚的边框树脂的情况下，由于封固树脂面与边框的前端或者圆形面一致，因此发光面的厚度大致均匀，相关色温度的分布变得平坦，能够缓解颜色不均。Next, Experiment 3 performed by the experimenter will be described. Experimenters make a COB with the same frame resin thickness as 0.35-0.4mm of the sealing resin and a COB with the same frame resin thickness as 0.65-0.7mm of the sealing resin, and install them on a device that uses a lens to condense light , As a result of observing the irradiated surface, in the case of a frame with a thickness of 0.65 to 0.7 mm, the correlated color temperature becomes higher as it goes between the chip and the frame or toward the center of light emission. However, in the case of a frame resin with a thickness of 0.35 to 0.5mm, since the surface of the sealing resin coincides with the front end or the circular surface of the frame, the thickness of the light-emitting surface is approximately uniform, and the distribution of the correlated color temperature becomes flat, which can alleviate the color loss. uneven.
在使用厚度为400μm、100μm的2种芯片的类的情况下，在使用厚度为400μm的芯片时，若将从基板面的堤部的高度设为0.6～0.75mm，将封固树脂的中心厚度设为0.6～0.65mm，则根据与上述相同的原理，与将堤部的高度设为比0.7mm高的情况相比，能够降低照射面的颜色不均。更优选为将芯片的厚度设为100μm以下。通过使芯片的厚度变薄，能够容易控制形状，并且能够防止因芯片之间的封固树脂的厚度变厚导致从芯片之间输出的光减小，因此能够降低芯片表面的亮度和芯片之间的亮度差，从而能够减小颜色不均。In the case of using two types of chips with a thickness of 400 μm and 100 μm, when using a chip with a thickness of 400 μm, if the height of the bank from the substrate surface is 0.6 to 0.75 mm, the center thickness of the sealing resin If it is 0.6 to 0.65 mm, color unevenness on the irradiated surface can be reduced compared to a case where the height of the banks is set higher than 0.7 mm by the same principle as above. More preferably, the chip thickness is 100 μm or less. By making the thickness of the chip thinner, the shape can be easily controlled, and the light output from between the chips can be prevented from being reduced due to the thickening of the sealing resin between the chips, so that the brightness of the chip surface and the gap between the chips can be reduced. The difference in brightness can reduce color unevenness.
接着，对实验者所进行的实验4进行说明。将□1mm×0.1的倒装片式的LED通过金属(Au/Sn)接合在后表面形成有Cu上电镀Ni/Pd/Au的层、且在前表面相同地形成有Cu上电镀Ni/Pd/Ni的配线层的DPC基板(50×50mm)上，之后，利用焊锡将元件安装在基板的前表面之后，将由AlSiC制成的散热器(散热部件)通过甲酸焊锡接合于安装基板上，并在该安装基板上形成0.5mm的堤部，并且涂布混合有24～30重量％的荧光体的二甲基硅酮，并使其硬化。Next, Experiment 4 performed by the experimenter will be described. A □1mm×0.1 flip-chip LED is bonded by metal (Au/Sn) to form a layer of Ni/Pd/Au plating on Cu on the rear surface, and a layer of Ni/Pd plating on Cu is formed on the front surface in the same way On the DPC substrate (50×50mm) of the wiring layer of /Ni, after that, after mounting the components on the front surface of the substrate with solder, the heat sink (radiation component) made of AlSiC is bonded to the mounting substrate by formic acid soldering, A bank of 0.5 mm was formed on the mounting substrate, and dimethyl silicone mixed with 24 to 30% by weight of phosphor was applied and cured.
在基板单体中，由于与后表面相比前表面的金属图案的陶瓷被覆率较小，因此向配线图案面弯曲突出150μm左右。因此，若用以往工序制作COB，则封固树脂面被硬化后，该面硬化成凹状，由于封固树脂层设为400～350μm，因此荧光体的浓度朝向堤部侧变高，难以完全消除点亮时的颜色不均。但是，通过预先焊锡接合散热器，从而能够将基板的突出弯曲降低到50μm左右。由此，混合有荧光体的树脂更加均匀地硬化，能够大幅降低因荧光体浓度不均衡而造成的颜色不均。In the single substrate, since the ceramic coverage of the metal pattern on the front surface is smaller than that on the rear surface, it bends and protrudes by about 150 μm toward the wiring pattern surface. Therefore, if the COB is produced by the conventional process, after the surface of the sealing resin is hardened, the surface is hardened into a concave shape, and since the sealing resin layer is 400 to 350 μm, the concentration of the phosphor becomes higher toward the side of the bank, and it is difficult to completely eliminate Uneven color when lit. However, the protruding warpage of the substrate can be reduced to about 50 μm by pre-soldering the heat sink. As a result, the resin mixed with the phosphor is more uniformly cured, and color unevenness due to uneven concentration of the phosphor can be significantly reduced.
以上，对第一实施方式进行了说明。第一实施方式所涉及的发光装置110具备陶瓷基板10。发光装置110具备安装于陶瓷基板10的第一主面10a的半导体发光元件20。发光装置110具备形成在半导体发光元件20的周围且形成在第一主面10a上的边框(边框树脂)32。发光装置110具备封固树脂(波长转换层)31，该封固树脂以覆盖半导体发光元件20的方式形成于由边框32形成的空间内，并且包括将半导体发光元件20所放射出的光转换为波长与该光的波长不同的光的荧光体。在上述第一实施方式所涉及的发光装置110中，边框32的从第一主面10a开始的第二高度(L1)与封固树脂31的中央部分的从第一主面10a开始的第一高度(L3)的第一比值(L1/L3)为0.98以上且1.13以下。并且，在发光装置110中，所述第一高度(L3)与封固树脂31的与边框32接触的部分的从第一主面10a开始的第三高度(L2)的第二比值(L3/L2)为0.86以上且1.17以下。因此，根据第一实施方式所涉及的发光装置110，如上述的实验结果等所示，能够抑制颜色不均的产生。The first embodiment has been described above. A light emitting device 110 according to the first embodiment includes a ceramic substrate 10 . The light emitting device 110 includes a semiconductor light emitting element 20 mounted on the first main surface 10 a of the ceramic substrate 10 . The light emitting device 110 includes a frame (frame resin) 32 formed around the semiconductor light emitting element 20 and formed on the first main surface 10 a. The light-emitting device 110 includes a sealing resin (wavelength conversion layer) 31 that is formed in a space formed by the frame 32 so as to cover the semiconductor light-emitting element 20, and includes a sealing resin that converts light emitted from the semiconductor light-emitting element 20 into Phosphor having a wavelength different from that of the light. In the light-emitting device 110 according to the above-mentioned first embodiment, the second height ( L1 ) of the frame 32 from the first main surface 10 a is the same as the first height ( L1 ) of the central part of the sealing resin 31 from the first main surface 10 a . The first ratio (L1/L3) of the height (L3) is not less than 0.98 and not more than 1.13. Furthermore, in the light emitting device 110, the second ratio (L3/ L2) is not less than 0.86 and not more than 1.17. Therefore, according to the light-emitting device 110 according to the first embodiment, as shown by the above-mentioned experimental results and the like, it is possible to suppress the occurrence of color unevenness.
另外，在发光装置110中，L3能够在0.5mm以内的范围中小于L1。在L3在0.5mm以内的范围中小于L1的情况下，封固树脂31不向反射层32的外侧流动，能够使封固树脂31的厚度均一。并且，在发光装置110中，还可以是第一比值(L1/L3)成为1.35以下的值。In addition, in the light emitting device 110, L3 can be smaller than L1 within a range of 0.5 mm. When L3 is smaller than L1 within the range of 0.5 mm, the sealing resin 31 does not flow to the outside of the reflective layer 32 , and the thickness of the sealing resin 31 can be made uniform. Furthermore, in the light emitting device 110, the first ratio (L1/L3) may be a value equal to or less than 1.35.
并且，在发光装置110中，在第二比值(L3/L2)大于1且为1.17以下的情况下，如图7所示，可以将多个半导体发光元件20中的相邻的2个半导体发光元件20之间区域的封固树脂31的上表面和第一主面10a之间的距离L10设为小于相邻的2个半导体发光元件20上的区域中的封固树脂31的上表面和第一主面10a之间的距离L11，L12。如图7所示，通过在发光面形成凹凸，能抑制因在封固树脂的发光面产生的从半导体发光元件20放射出的光的全反射而造成的光输出效率的下降。In addition, in the light emitting device 110, when the second ratio (L3/L2) is greater than 1 and equal to or less than 1.17, as shown in FIG. The distance L10 between the upper surface of the sealing resin 31 and the first main surface 10a in the region between the elements 20 is set to be smaller than the upper surface of the sealing resin 31 and the first main surface 10a in the region on two adjacent semiconductor light emitting elements 20. The distance L11, L12 between a main surface 10a. As shown in FIG. 7 , by forming irregularities on the light emitting surface, it is possible to suppress a decrease in light output efficiency due to total reflection of light emitted from the semiconductor light emitting element 20 on the light emitting surface of the sealing resin.
(第二实施方式)(second embodiment)
接着，对第二实施方式进行说明。例如，在以往的发光装置中，将封固树脂(波长转换层)的厚度设为500μm以上，且将放射光颜色的相关色温度设为5000K左右时，使用混合有8重量％荧光体的封固树脂。如此，荧光体的密度较小时，荧光体自身的热仅向封固树脂传递。此时，由于封固树脂的导热系数非常低，因此热量难以向半导体发光元件或安装基板部传递。由此，半导体发光元件自身的温度会上升。因此，散热性较低。所以，在第二实施方式中，对散热性较高的发光装置进行说明。Next, a second embodiment will be described. For example, in a conventional light-emitting device, when the thickness of the sealing resin (wavelength conversion layer) is set to 500 μm or more, and the correlated color temperature of the emitted light color is set to about 5000K, a sealant mixed with 8% by weight of phosphor is used. Solid resin. In this way, when the density of the phosphor is low, the heat of the phosphor itself is transferred only to the sealing resin. At this time, since the thermal conductivity of the sealing resin is very low, it is difficult for heat to transfer to the semiconductor light emitting element or the mounting substrate. As a result, the temperature of the semiconductor light emitting element itself rises. Therefore, heat dissipation is low. Therefore, in the second embodiment, a light-emitting device with high heat dissipation will be described.
图8是用于说明第二实施方式所涉及的发光装置的图。如图8的例子所示，在第二实施方式所涉及的发光装置中，形成出光面平坦的波长转换层31。并且，如图8的例子所示，在第二实施方式所涉及的发光装置中，波长转换层31的从第一主面10a开始的高度为300～400μm。因此，波长转换层31中的封固树脂的量少于以往的发光装置中的封固树脂的量。为了放射出与以往的发光装置所放射出的光的相关色温度相同程度的相关色温度的光，在第二实施方式所涉及的发光装置中，使波长转换层31中的荧光体的密度高于以往的发光装置中的荧光体的密度。例如，第二实施方式所涉及的发光装置为了放射5000K左右的相关色温度的光，使用混合有17重量％荧光体的封固树脂。在此，在第二实施方式所涉及的发光装置中，波长转换层31中的荧光体沉淀于半导体发光元件20侧，在半导体发光元件20周边存在荧光体的浓度较高的部分31a。FIG. 8 is a diagram for explaining a light emitting device according to a second embodiment. As shown in the example of FIG. 8 , in the light-emitting device according to the second embodiment, the wavelength conversion layer 31 having a flat light-emitting surface is formed. Furthermore, as shown in the example of FIG. 8 , in the light-emitting device according to the second embodiment, the height of the wavelength conversion layer 31 from the first main surface 10 a is 300 to 400 μm. Therefore, the amount of sealing resin in the wavelength conversion layer 31 is smaller than the amount of sealing resin in the conventional light-emitting device. In order to emit light having a correlated color temperature approximately equal to the correlated color temperature of light emitted by a conventional light emitting device, in the light emitting device according to the second embodiment, the density of the phosphor in the wavelength conversion layer 31 is increased. Density of phosphors in conventional light-emitting devices. For example, in order to emit light with a correlated color temperature of about 5000K, the light-emitting device according to the second embodiment uses a sealing resin mixed with 17% by weight of a phosphor. Here, in the light-emitting device according to the second embodiment, the phosphor in the wavelength conversion layer 31 is deposited on the side of the semiconductor light-emitting element 20 , and a portion 31 a with a high concentration of phosphor exists around the semiconductor light-emitting element 20 .
随着荧光体的密度变大，在封固树脂的体积内荧光体粒子相互接触，从而荧光体与安装基板部15或半导体发光元件20接触的概率也变高。因此，被较亮的蓝色光激励的荧光体自身的温度上升(热)易于传递到安装基板部15或半导体发光元件20。因此，第二实施方式所涉及的发光装置的散热性较高。As the density of the phosphor increases, the phosphor particles contact each other within the volume of the sealing resin, and the probability of the phosphor contacting the mounting substrate portion 15 or the semiconductor light emitting element 20 also increases. Therefore, the temperature rise (heat) of the phosphor itself excited by the relatively bright blue light is easily transferred to the mounting substrate portion 15 or the semiconductor light emitting element 20 . Therefore, the light emitting device according to the second embodiment has high heat dissipation.
并且，将封固树脂31形成为覆盖半导体发光元件20之间的陶瓷基板10的表面，且使荧光体的浓度高于半导体发光元件20之间以外的封固部分的荧光体的浓度，由此能够将来自荧光体的热有效地向安装基板部15或半导体发光元件20的基板(蓝宝石等)传递，因此能够进一步降低驱动时的封固温度。In addition, the sealing resin 31 is formed to cover the surface of the ceramic substrate 10 between the semiconductor light emitting elements 20, and the concentration of the phosphor is higher than the concentration of the phosphor in the sealed portion other than between the semiconductor light emitting elements 20, thereby Since the heat from the phosphor can be efficiently transferred to the mounting substrate portion 15 or the substrate (sapphire, etc.) of the semiconductor light emitting element 20 , the sealing temperature during driving can be further reduced.
接着，对实验者所进行的实验5进行说明。在通过金属(焊锡)将□1mm×0.1的倒装片式的LED接合在DPC图案上的DPC基板上由可见光反射较高的树脂形成内径为19mm的堤部之后，在二甲基硅酮中混合并分散17重量％的荧光体，并将其涂布在堤部内，以使从基板面的高度成为0.35～0.5mm、相关色温度成为5000K。以相同方式，将混合有8重量％的荧光体的二甲基硅酮也涂布成从基板面的高度为0.35～0.4mm、相关色温度为5000K。之后，使热硬化后的模块的后表面和散热器之间夹住焊片而接合。Next, Experiment 5 performed by the experimenter will be described. After bonding a □1mm×0.1 flip-chip LED to a DPC substrate on a DPC pattern with metal (solder), a bank with an inner diameter of 19mm is formed from a resin with a high reflectance of visible light. Phosphors were mixed and dispersed in an amount of 17% by weight, and applied in banks so that the height from the substrate surface was 0.35 to 0.5 mm and the correlated color temperature was 5000K. In the same manner, dimethyl silicone mixed with 8% by weight of phosphor was also applied so that the height from the substrate surface was 0.35 to 0.4 mm and the correlated color temperature was 5000K. Thereafter, the thermally hardened rear surface of the module and the heat sink are bonded with the solder tab interposed therebetween.
将该模块通过高温导电性板等安装于半导体制冷片上并使其点亮。此时设定半导体制冷片的温度以使封装体温度：Tc＝90度，并且使该模块点亮并用热观测仪测定稳定状态下的封固表面温度。其结果，混合有8重量％的荧光体的情况下的封固温度为135度，而混合有17重量％的荧光体的情况下变为110度。因此，混合有17重量％的荧光体的发光装置比混合有8重量％的荧光体的发光装置散热性更高。Install the module on a semiconductor cooling chip through a high-temperature conductive plate and light it up. At this time, set the temperature of the peltier so that the temperature of the package body: Tc=90 degrees, and light the module and measure the sealing surface temperature in a stable state with a thermal observer. As a result, the sealing temperature was 135° C. when 8% by weight of phosphor was mixed, and 110° C. when 17% by weight of phosphor was mixed. Therefore, the light-emitting device in which 17% by weight of phosphor was mixed had higher heat dissipation than the light-emitting device in which 8% by weight of phosphor was mixed.
以上，利用实施方式对本实用新型进行了说明，本实用新型的技术方案并未限定在上述实施方式所记载的范围。本领域技术人员明确可知上述实施方式还存在各种变更或改良。并且，从权利要求书的记载范围可知，上述变更或改良也包含于本实用新型的技术范围内。As mentioned above, although this invention was demonstrated using embodiment, the technical solution of this invention is not limited to the range described in said embodiment. It is obvious to those skilled in the art that there are various changes and improvements in the above-mentioned embodiment. In addition, it is clear from the description range of a claim that the said change or improvement is also included in the technical scope of this invention.
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| JP2017059782A (en) | Light emitting device |
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | Granted publication date:20141231 Termination date:20170924 | |
| CF01 | Termination of patent right due to non-payment of annual fee |