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CN203545672U - MEMS (micro-electromechanical system) package - Google Patents

MEMS (micro-electromechanical system) package
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Publication number
CN203545672U
CN203545672UCN201320477055.2UCN201320477055UCN203545672UCN 203545672 UCN203545672 UCN 203545672UCN 201320477055 UCN201320477055 UCN 201320477055UCN 203545672 UCN203545672 UCN 203545672U
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mems
substrate
sensor
conductive layer
package according
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张睿
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AAC Technologies Holdings Shenzhen Co Ltd
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AAC Acoustic Technologies Shenzhen Co Ltd
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Abstract

Translated fromChinese

本实用新型提供了一种MEMS封装,包括基板以及在所述基板上形成的至少一个第一MEMS传感器,所述基板上还形成有至少一个与所述第一MEMS传感器功能不同的第二MEMS传感器。相较于两种具有不同功能的MEMS传感器分别制造再集成封装的MEMS传感器,本实用新型通过在同一基板上一次形成两种功能不同的MEMS传感器,使产品具有更为紧凑的结构,从而获得更小的产品尺寸及更低的生产成本。

Figure 201320477055

The utility model provides a MEMS package, which includes a substrate and at least one first MEMS sensor formed on the substrate, and at least one second MEMS sensor with a different function from the first MEMS sensor is also formed on the substrate . Compared with two kinds of MEMS sensors with different functions, which are manufactured separately and then integrated and packaged, the utility model forms two kinds of MEMS sensors with different functions on the same substrate at one time, so that the product has a more compact structure, thereby obtaining a more compact structure. Small product size and lower production cost.

Figure 201320477055

Description

MEMS encapsulation
[technical field]
The utility model relates to a kind of MEMS(Micro of utilization Electro Mechanical System) sensor (MEMS sensor) that technology is manufactured, relate in particular to a kind of MEMS encapsulation.
[background technology]
MEMS (Micro Electro Mechanical Systems) refers to the Micro Electro Mechanical System that integrates microsensor, actuator, signal processor, control circuit, interface circuit, communication and power supply.It relates to multiple subject and the technology such as electronics, machinery, material, physics, chemistry, biology, medical science, has broad application prospects.MEMS sensor is to adopt microelectronics and the produced novel sensor of micromachining technology.Compare with traditional sensor, it has, and volume is little, lightweight, cost is low, low in energy consumption, reliability is high, be suitable for mass production, be easy to integrated and realize intelligentized feature.Meanwhile, the characteristic size in micron dimension makes it can complete the irrealizable function of some traditional mechanical pick-up device.
MEMS encapsulation of the prior art, MEMS pressure sensor and MEMS microphone are independent manufacture, and in the process of integration packaging, need to make has larger spacing between two kinds of chips, to avoid in encapsulation process, the interference each other of processing step separately.This MEMS encapsulation is unfavorable for the miniaturization of product structure, is also unfavorable for cost savings.
Therefore, be necessary to provide a kind of novel MEMS encapsulation.
[utility model content]
The purpose of this utility model is to provide a kind of structure more compact and can under less package dimension, realize the MEMS encapsulation of more perfect function.
The technical solution of the utility model is as follows: a kind of MEMS encapsulation, comprise substrate and at least one the MEMS sensor forming on described substrate, and on described substrate, be also formed with at least one the 2nd MEMS sensor.
Preferably, described the 2nd MEMS sensor is MEMS pressure sensor.
Preferably, described MEMS pressure sensor comprises and is arranged on the insulated support on described substrate and is arranged on the pressure drag component on described insulated support; Described insulated support has internal face, and this MEMS pressure sensor also comprises the citadel being surrounded by the internal face of described pressure drag component, described insulated support and described substrate.
Preferably, described pressure drag component is vibrating diaphragm, and described vibrating diaphragm forms piezoresistive regions by Implantation.
Preferably, described MEMS pressure sensor comprises the first conductive layer of being arranged on described substrate, is arranged on the insulating supporting portion on described the first conductive layer and is arranged on the second conductive layer in described insulating supporting portion; Described insulating supporting portion has inner chamber, and this MEMS pressure sensor also comprises by the inner chamber of described the first conductive layer, described insulating supporting portion and the seal area that described the second conductive layer surrounds.
Preferably, described the first conductive layer is the electrode being arranged on described substrate.
Preferably, described the second conductive layer is conductive film.
Preferably, a described MEMS sensor is MEMS microphone.
Preferably, described MEMS microphone comprises the through hole that is arranged on described substrate, covers stationary part on described through hole and away from the vibration section of described substrate.
Preferably, described stationary part comprises the backboard covering on described through hole and is arranged on the insulating part on described backboard, offers the sound hole being communicated with described through hole on described backboard; Described vibration section is the vibrating diaphragm covering on described insulating part.
The beneficial effects of the utility model are: the MEMS sensor of manufacturing respectively again integration packaging compared to two kinds of MEMS sensors with difference in functionality, the utility model by once forming two kinds of MEMS sensors that function is different on same substrate, make product there is more compact structure, thereby obtain less product size and lower production cost.
[accompanying drawing explanation]
Fig. 1 is the structural representation that a kind of MEMS of the utility model encapsulates the first embodiment;
Fig. 2 is the structural representation that a kind of MEMS of the utility model encapsulates the second embodiment.
[specific embodiment]
Below in conjunction with drawings and embodiments, the utility model is described in further detail.
As shown in Figure 1, structural representation for the utility model the first embodiment, at least one MEMS sensor and at least one the 2nd MEMS sensor that thisMEMS encapsulation 100 comprisessubstrate 101 and forms onsubstrate 101, the one MEMS sensor has different functions from the 2nd MEMS sensor, and two kinds of MEMS sensors are insubstrate 101 tilings.Preferably, a MEMS sensor is that MEMSmicrophone 300, the two MEMS sensors are MEMS pressure sensor 200.The one MEMS sensor or the 2nd MEMS sensor can also be the MEMS sensors of MEMS flow sensor, MEMS temperature sensor or other kinds.WhereinMEMS pressure sensor 200 comprises theinsulated support 201 being arranged onsubstrate 101 and is arranged on thepressure drag component 202 on insulated support 201.Insulated support 201 hasinternal face 203, and thisMEMS pressure sensor 200 also comprises thecitadel 204 thatinternal face 203 andsubstrate 101 bypressure drag component 202,insulated support 201 surround.
In this embodiment,pressure drag component 202 is vibrating diaphragm, and vibrating diaphragm forms piezoresistive regions or piezoelectric regions by Implantation.Piezoresistive regions on vibrating diaphragm changes the variation that causes corresponding resistance or voltage (electric current) with vibrating diaphragm form, thereby realizes the induction to pressure.
MEMSmicrophone 300 comprises the throughhole 301 that is arranged onsubstrate 101, coverstationary part 302 on throughhole 301 and away from thevibration section 303 of substrate 101.Preferably,stationary part 302 comprises thebackboard 304 covering on throughhole 301 and is arranged on theinsulating part 305 onbackboard 304, offers thesound hole 306 being communicated with throughhole 301 on backboard 304.Vibration section 303 is for covering the vibrating diaphragm on insulating part 305.On vibrating diaphragm andbackboard 304, be respectively equipped with conductive layer can powering up, but the part powering up due to the existence of insulatingpart 305 mutually insulated, like this, vibrating diaphragm andbackboard 304 have just formed the capacitor with electriccapacity.Sound hole 306 is set onbackboard 304, and sound air-flow can be delivered on vibrating diaphragm by thissound hole 306, and causes vibrating diaphragm up-down vibration.Because form capacitor between vibrating diaphragm andbackboard 304, when vibrating diaphragm vibrates, distance between the two changes, and causes capacitance to change, and the variation that electric capacity occurs has produced electric current, thereby converts tones into the signal of telecommunication.The large I in the space between vibrating diaphragm andbackboard 304 is adjusted by controlling the thickness of insulatingpart 305.
Afterwhole substrate 101 moulding, pass through wafer bonding(wafer bonding) and superstructure is (in the present embodiment, superstructure refers to theinsulated support 201 ofMEMS pressure sensor 200 and thebackboard 304 of MEMS microphone 300) be connected, in this process, realize the control to pressure incitadel 204.
Compared to MEMS pressure sensor and MEMS acoustic sensor, manufacture respectively the situation that is packaged into again MEMS sensor, by once form MEMS pressure sensor and MEMS microphone on same substrate, make product there is more compact structure, thereby obtain less product size and lower production cost.
As shown in Figure 2, in the second embodiment of the present utility model, at least one MEMS sensor and at least one the 2nd MEMS sensor that this MEMS encapsulation is still included insubstrate 101 and forms onsubstrate 101, the one MEMS sensor and the 2nd MEMS sensor have different functions, and two kinds of MEMS sensors tile on substrate 101.Preferably, a MEMS sensor is that MEMSmicrophone 300, the two MEMS sensors are MEMS pressure sensor 400.The one MEMS sensor or the 2nd MEMS sensor can also be the MEMS sensors of MEMS flow sensor, MEMS temperature sensor or other kinds.Each part ofMEMS microphone 300 is all identical with a upper embodiment with function, at this, no longer narrates.There is variation in the structure of different isMEMS pressure sensor 400, in this embodiment,MEMS pressure sensor 400 comprises the firstconductive layer 401 of being arranged onsubstrate 101, is arranged on the insulating supportingportion 402 on the firstconductive layer 401 and is arranged on the secondconductive layer 403 in insulating supportingportion 402, and wherein insulating supportingportion 402 has inner chamber 404.ThisMEMS pressure sensor 400 also comprises the seal area being surrounded by theinner chamber 404 of the firstconductive layer 401, insulating supportingportion 402 and the second conductive layer 403.The firstconductive layer 401, seal area and the secondconductive layer 403 have formed capacitance structure, when the form of the secondconductive layer 403 changes, spacing between the firstconductive layer 401 and the secondconductive layer 403 changes thereupon, thereby causes that electric capacity changes, and realizes the induction to pressure then.
Preferably, above-mentioned the firstconductive layer 401 is for to be arranged on the electrode onsubstrate 101, and the secondconductive layer 403 is conductive film.The conductive film here can be the vibrating diaphragm that after adopting Si, SiO2, Si3N4 or polycrystalline silicon material to generate, doping metals forms, and such vibrating diaphragm can conduct electricity, and therefore can use electrode as.
Whole substrate 101 is withbackboard 304 moulding ofMEMS microphone 300 and after electrode is fixed onsubstrate 101, by wafer bonding, be connected with superstructure (the superstructure here refers to the firstconductive layer 401 ofMEMS pressure sensor 400 and thebackboard 304 of MEMS microphone 300), in this process, realize the control to seal areainternal pressure.Substrate 101 all can withbackboard 304 use SOI wafer straight formings or Si wafer growth shaping.
Above-described is only embodiment of the present utility model; at this, it should be pointed out that for the person of ordinary skill of the art, do not departing under the prerequisite of the utility model creation design; can also make improvement, but these all belong to protection domain of the present utility model.

Claims (10)

Translated fromChinese
1.一种MEMS封装,包括基板以及在所述基板上形成的至少一个第一MEMS传感器,其特征在于,所述基板上还形成有至少一个与所述第一MEMS传感器功能不同的第二MEMS传感器。1. A MEMS package, comprising a substrate and at least one first MEMS sensor formed on the substrate, characterized in that, the substrate is also formed with at least one second MEMS with different functions from the first MEMS sensor sensor.2.根据权利要求1所述的MEMS封装,其特征在于,所述第二MEMS传感器为MEMS压力传感器。2. The MEMS package according to claim 1, wherein the second MEMS sensor is a MEMS pressure sensor.3.根据权利要求2所述的MEMS封装,其特征在于,所述MEMS压力传感器包括设置在所述基板上的绝缘支撑件以及设置在所述绝缘支撑件上的压阻元件;所述绝缘支撑件具有内壁面,该MEMS压力传感器还包括由所述压阻元件、所述绝缘支撑件的内壁面和所述基板围成的密闭区。3. The MEMS package according to claim 2, wherein the MEMS pressure sensor comprises an insulating support arranged on the substrate and a piezoresistive element arranged on the insulating support; the insulating support The part has an inner wall, and the MEMS pressure sensor also includes a sealed area surrounded by the piezoresistive element, the inner wall of the insulating support and the substrate.4.根据权利要求3所述的MEMS封装,其特征在于,所述压阻元件为振膜,所述振膜通过离子注入形成压阻区。4. The MEMS package according to claim 3, wherein the piezoresistive element is a diaphragm, and the diaphragm forms a piezoresistive region by ion implantation.5.根据权利要求2所述的MEMS封装,其特征在于,所述MEMS压力传感器包括设置在所述基板上的第一导电层、设置在所述第一导电层上的绝缘支撑部以及设置在所述绝缘支撑部上的第二导电层;所述绝缘支撑部具有内腔,该MEMS压力传感器还包括由所述第一导电层、所述绝缘支撑部的内腔和所述第二导电层围成的密封区。5. The MEMS package according to claim 2, wherein the MEMS pressure sensor comprises a first conductive layer disposed on the substrate, an insulating support portion disposed on the first conductive layer, and a The second conductive layer on the insulating support part; the insulating support part has an inner cavity, and the MEMS pressure sensor also includes the first conductive layer, the inner cavity of the insulating support part and the second conductive layer Enclosed sealed area.6.根据权利要求5所述的MEMS封装,其特征在于,所述第一导电层为设置在所述基板上的电极。6. The MEMS package according to claim 5, wherein the first conductive layer is an electrode disposed on the substrate.7.根据权利要求5所述的MEMS封装,其特征在于,所述第二导电层为导电薄膜。7. The MEMS package according to claim 5, wherein the second conductive layer is a conductive film.8.根据权利要求1-7任一项所述的MEMS封装,其特征在于,所述第一MEMS传感器为MEMS麦克风。8. The MEMS package according to any one of claims 1-7, wherein the first MEMS sensor is a MEMS microphone.9.根据权利要求8所述的MEMS封装,其特征在于,所述MEMS麦克风包括设置在所述基板上的贯通孔、覆盖在所述贯通孔上的静止部和远离所述基板的振动部。9 . The MEMS package according to claim 8 , wherein the MEMS microphone comprises a through hole disposed on the substrate, a stationary part covering the through hole, and a vibrating part away from the substrate.10.根据权利要求9所述的MEMS封装,其特征在于,所述静止部包括覆盖在所述贯通孔上的背板和设置在所述背板上的绝缘件,所述背板上开设有与所述贯通孔连通的声孔;所述振动部为覆盖在所述绝缘件上的振膜。10. The MEMS package according to claim 9, wherein the static part comprises a back plate covering the through hole and an insulator disposed on the back plate, the back plate is provided with A sound hole communicating with the through hole; the vibrating part is a diaphragm covering the insulating member.
CN201320477055.2U2013-08-062013-08-06MEMS (micro-electromechanical system) packageExpired - Fee RelatedCN203545672U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
CN104883652A (en)*2015-05-292015-09-02歌尔声学股份有限公司MEMS microphone and pressure sensor integrated structure and manufacture method thereof
CN106535072A (en)*2016-12-052017-03-22歌尔股份有限公司MEMS microphone chip and MEMS microphone

Cited By (5)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
CN104883652A (en)*2015-05-292015-09-02歌尔声学股份有限公司MEMS microphone and pressure sensor integrated structure and manufacture method thereof
KR20170094428A (en)*2015-05-292017-08-17고어텍 인크Integrated structure of mems microphone and pressure sensor, and manufacturing method thereof
KR101965089B1 (en)*2015-05-292019-04-02고어텍 인크Integrated structure of mems microphone and pressure sensor, and manufacturing method thereof
CN104883652B (en)*2015-05-292019-04-12歌尔股份有限公司MEMS microphone, pressure sensor integrated morphology and its manufacturing method
CN106535072A (en)*2016-12-052017-03-22歌尔股份有限公司MEMS microphone chip and MEMS microphone

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CF01Termination of patent right due to non-payment of annual fee
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Granted publication date:20140416

Termination date:20210806


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