CN203415580U - Electrode structure of power semiconductor chip - Google Patents

Abstract

The utility model discloses an electrode structure of a power semiconductor chip. The electrode structure comprises an electrode slice, the electrode slice comprises an electrode slice body and a current output end, and a group of destressing grooves is formed in the electrode slice body, wherein the destressing grooves are arranged at two opposite sides of the electrode slice body in a staggered manner. The electrode structure of the power semiconductor chip solves the problem that crack of a silicon chip due to thermal expansion is likely to happen in the electrode slice made of common metal and the silicon chip because difference between the expansion coefficients of the metal and the silicon chip is great, the structure is simple, processing is convenient, the structure of the electrode slice can be adjusted according the output current, and the electrode structure can be widely applied to the field of power semiconductor chips.

Description

A kind of power semiconductor chip electrode structure

Technical field

The utility model relates to a kind of power semiconductor chip, relates in particular to a kind of power semiconductor chip electrode structure.

Background technology

High power semi-conductor chip is provided with upper/lower electrode, and the selected material of electrode approaches with silicon chip coefficient of linear expansion as far as possible, pyroconductivity material higher, that resistivity is low, as molybdenum sheet, tungsten.But molybdenum, tungsten material price are high, belong to rare metal.For reducing costs, can select common metal, such as copper, iron etc.Copper has advantages of than the better pyroconductivity of molybdenum, low resistivity.But it is large that shortcoming is coefficient of linear expansion, only adapt to the upper/lower electrode of making small-power chip, copper price is approximately 20 percent of molybdenum.

Therefore, need to consider how common metal is carried out to structural improvement, solve because coefficient of linear expansion is large and silicon chip mismatch problem.

Utility model content

The purpose of this utility model is to provide a kind of power semiconductor chip electrode structure, solves common metal and silicon chip coefficient of expansion difference large, the problem of silicon chip thermal expansion drawing crack.

The utility model solves the technical scheme that its technical problem adopts: a kind of power semiconductor chip electrode structure, comprise electrode slice, and described electrode slice comprises electrode slice body and current output terminal; On described electrode slice body, be provided with one group of destressing groove.

Preferably, described destressing groove is arranged on electrode slice body two opposite side, and the destressing groove Heterogeneous Permutation on two opposite side.

Further, described electrode slice is copper sheet, and the hem width of described electrode slice body is 2～8mm, and described is 2～6mm with the distance between the upper adjacent two destressing grooves in one side.The width of described destressing groove is 0.1～3mm, destressinggroove depth 2～8mm.

Preferably, the hem width of described electrode slice body is 5mm, and described is 4mm with the distance between the upper adjacent two destressing grooves in one side.The width of described destressing groove is 0.7mm, destressing groove depth 3mm.

For meeting the requirement of different electric current output to electrode slice, described electrode slice at least arranges one group of electrode slice body, and the output size of the number of described electrode slice body and power semiconductor chip electric current is suitable.

The beneficial effects of the utility model: by destressing groove is set on electrode slice body, the telescopic variation of destressing groove after being heated by electrode slice, makes the thermal coefficient of expansion of electrode slice and silicon chip more approaching, avoid the be heated problem of easy drawing crack of silicon chip.Described destressing groove Heterogeneous Permutation, destressing better effects if.Described electrode slice is copper sheet, and cost is low, and thermal conductivity is good, and resistivity is low, chip operation can be produced to heat and conduct in time, reduces the loss causing because of the pressure drop producing on electrode.

Below in conjunction with drawings and Examples, the utility model is described in further detail.

Accompanying drawing explanation

Fig. 1 is front view of the present utility model.

Fig. 2 is the front view that a plurality of electrode slice bodies are arranged in juxtaposition.

Embodiment

Embodiment 1: as shown in Figure 1, a kind of power semiconductor chip electrode structure, comprises electrode slice, and described electrode slice compriseselectrode slice body 1 andcurrent output terminal 2; On describedelectrode slice body 1, be provided with one group of destressing groove 3.Described electrode slice is copper sheet, and destressinggroove 3 is arranged ondestressing groove 3 Heterogeneous Permutations on 1 liang of opposite side of electrode slice body and on two opposite side.

The hem width of describedelectrode slice body 1 is 2～8mm, and the described distance with 3 of the upper adjacent two destressing grooves in one side is 2～6mm.The width of describeddestressing groove 3 is 0.1～3mm, the dark 2～8mm ofdestressing groove 3.

Preferably, the hem width of describedelectrode slice body 1 is 5mm, and the described distance with 3 of the upper adjacent two destressing grooves in one side is 4mm.The width of describeddestressing groove 3 is 0.7mm, the dark 3mm ofdestressing groove 3.

As shown in Figure 2, described electrode slice at least arranges one group ofelectrode slice body 1, and the output size of the number of describedelectrode slice body 1 and power semiconductor chip electric current is suitable.According to electric current output size, a plurality ofelectrode slice bodies 1 arranged side by side can be set.

Claims (8)

1. a power semiconductor chip electrode structure, comprises electrode slice, and described electrode slice comprises electrode slice body (1) and current output terminal (2); It is characterized in that: on described electrode slice body (1), be provided with one group of destressing groove (3).

2. power semiconductor chip electrode structure according to claim 1, is characterized in that: described destressing groove (3) Heterogeneous Permutation.

3. power semiconductor chip electrode structure according to claim 1 and 2, is characterized in that: described destressing groove (3) is arranged on electrode slice body (1) two opposite side.

4. power semiconductor chip electrode structure according to claim 3, is characterized in that: described electrode slice is copper sheet, and the hem width of described electrode slice body (1) is 2～8mm, and described is 2～6mm with the distance between the upper adjacent two destressing grooves (3) in one side.

5. power semiconductor chip electrode structure according to claim 4, is characterized in that: the width of described destressing groove (3) is 0.1～3mm, the dark 2～8mm of destressing groove (3).

6. power semiconductor chip electrode structure according to claim 4, is characterized in that: the hem width of described electrode slice body (1) is 5mm, and described is 4mm with the distance between the upper adjacent two destressing grooves (3) in one side.

7. power semiconductor chip electrode structure according to claim 5, is characterized in that: the width of described destressing groove (3) is 0.7mm, the dark 3mm of destressing groove (3).

8. power semiconductor chip electrode structure according to claim 1 and 2, it is characterized in that: described electrode slice at least arranges an electrode slice body (1) number of described electrode slice body (1) and the suitable setting of the output of power semiconductor chip electric current size.

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