CN203085133U - Alternating current pixel driving circuit of active organic electroluminescence display - Google Patents
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Abstract
Translated fromChineseDescription
Translated fromChinese技术领域technical field
本实用新型涉及一种发光显示器的像素驱动电路，尤其是一种有源有机电致发光显示器的交流像素驱动电路，属于平面显示技术领域。The utility model relates to a pixel driving circuit of a light-emitting display, in particular to an AC pixel driving circuit of an active organic electroluminescent display, belonging to the technical field of plane display.
背景技术Background technique
OLED（Organic Light-Emitting Diode），即有机发光二极管，因其具有众多的优点，如主动发光无需背光源，视角宽，响应速度快，可以做成柔性显示等，所以OLED被誉为新一代显示器。OLED (Organic Light-Emitting Diode), that is, organic light-emitting diode, because of its many advantages, such as active light without backlight, wide viewing angle, fast response speed, flexible display, etc., so OLED is known as a new generation of display .
OLED显示的驱动方式分为有源驱动（AMOLED）和无源驱动（PMOLED）。采用无源驱动，随着屏幕尺寸的增大和分辨率的提高，会引发很多的问题，如寿命缩短，可靠性变差等。The drive mode of OLED display is divided into active drive (AMOLED) and passive drive (PMOLED). With the increase of screen size and resolution, the use of passive drive will cause many problems, such as shortened lifespan and poor reliability.
有源驱动的每个像素配备具有开关功能的薄膜晶体管（Thin-film-transistor，TFT）以及相应的存储电容来单独驱动每一个像素单元，使每一个像素单元独立地进行开和关。有源驱动无占空比，驱动不受扫描电极数的限制等问题，并且易于实现高亮度和高分辨率，使OLED的可靠性更好，显示质量更加优异，Each pixel actively driven is equipped with a thin-film transistor (Thin-film-transistor, TFT) with switching function and a corresponding storage capacitor to drive each pixel unit individually, so that each pixel unit can be turned on and off independently. Active drive has no duty cycle, the drive is not limited by the number of scanning electrodes, and it is easy to achieve high brightness and high resolution, which makes OLED more reliable and display quality more excellent.
目前，主流的TFT种类大概有a-Si:H（氢化非晶硅）TFT和LTPS（低温多晶硅）TFT。另外近年来发展比较迅速的还有金属氧化物TFT和有机TFT。另外，根据器件有源层材料的不同以及掺杂的不同，TFT又可以分为N型和P型，增强型和耗尽型TFT器件。At present, the mainstream TFT types probably include a-Si:H (hydrogenated amorphous silicon) TFT and LTPS (low temperature polysilicon) TFT. In addition, metal oxide TFTs and organic TFTs have developed rapidly in recent years. In addition, according to the different materials of the active layer of the device and the difference in doping, TFT can be divided into N-type and P-type, enhancement-type and depletion-type TFT devices.
a-Si:H TFT具有工艺简单、价格低、制备成品率高、关态漏电流小等特点，但由于其载流子的迁移率低，器件的尺寸比较大，容易使器件的阈值电压漂移，并且用于驱动a-Si:H TFT的驱动电压和信号电压都比较大，这些不利的因素都会使OLED像素的开口率下降，OLED的寿命缩减。a-Si:H TFT has the characteristics of simple process, low price, high manufacturing yield, and small off-state leakage current. However, due to its low carrier mobility and relatively large device size, it is easy to make the threshold voltage of the device drift. , and the driving voltage and signal voltage used to drive a-Si:HTFT are relatively large, these unfavorable factors will reduce the aperture ratio of the OLED pixel and shorten the life of the OLED.
LTPS TFT相对于a-Si:H TFT，具有载流子迁移率高，易于显示屏周边电路的集成，但是其成本较高，并且工艺不成熟，多晶硅TFT器件的阈值电压和迁移率等器件参数均匀性不好，这都会使OLED显示的均匀性和可靠性受到严重影响。Compared with a-Si:H TFT, LTPS TFT has high carrier mobility and is easy to integrate with the peripheral circuits of the display screen, but its cost is high, and the process is immature. The threshold voltage and mobility of polysilicon TFT devices and other device parameters The uniformity is not good, which will seriously affect the uniformity and reliability of OLED display.
目前的AMOLED像素电路，主要采用传统的两个薄膜晶体管和一个存储电容的方式驱动的方式，该驱动方式具有原理易懂、结构简单、易于制备等优点。但该驱动方式为两管驱动形式，由于无法对非晶硅薄膜晶体管的阈值电压漂移和多晶硅阈值电压不均匀进行补偿，从而导致OLED显示器的亮度不均，可靠性差。另外，OLED器件在长时间工作后，会出现器件退化问题，导致其开启电压变大，从而会影响流过OLED器件的电流，进而影响整个OLED显示屏的亮度。因此为了解决传统两管驱动的缺点以及OLED器件退化对OLED显示器所造成的影响，使OLED显示实现大尺寸，高分辨率，高质量显示的要求，需要新的像素电路，对驱动晶体管的阈值电压漂移及OLED器件退化等问题进行补偿。The current AMOLED pixel circuit is mainly driven by the traditional two thin film transistors and one storage capacitor. This driving method has the advantages of easy-to-understand principle, simple structure, and easy preparation. However, this driving method is a two-transistor driving form, and because the threshold voltage drift of the amorphous silicon thin film transistor and the non-uniform threshold voltage of the polysilicon cannot be compensated, the brightness of the OLED display is uneven and the reliability is poor. In addition, after the OLED device works for a long time, there will be a problem of device degradation, which will cause its turn-on voltage to increase, which will affect the current flowing through the OLED device, and then affect the brightness of the entire OLED display. Therefore, in order to solve the shortcomings of the traditional two-transistor drive and the impact of OLED device degradation on OLED displays, and to achieve large-size, high-resolution, and high-quality display requirements for OLED displays, a new pixel circuit is required, and the threshold voltage of the drive transistor Issues such as drift and OLED device degradation are compensated.
实用新型内容Utility model content
本实用新型的目的是为了解决上述现有技术的缺陷，提供一种能有效地提高OLED的显示质量，延长OLED器件的寿命的有源有机电致发光显示器的交流像素驱动电路。The purpose of this utility model is to solve the defects of the above-mentioned prior art, and provide an AC pixel drive circuit of an active organic electroluminescent display that can effectively improve the display quality of OLEDs and prolong the life of OLED devices.
本实用新型的目的可以通过采取如下技术方案达到：The purpose of this utility model can be achieved by taking the following technical solutions:
有源有机电致发光显示器的交流像素驱动电路，其特征在于：包括驱动晶体管T1、开关晶体管T2～T4、存储电容Cs、扫描控制线Vcontrol1与Vcontrol2、发光扫描控制线Vems、数据线Vdata、电源线Vdd、地线Vss、参考电压线Vref以及有机发光二级管OLED；其中，The AC pixel driving circuit of an active organic electroluminescent display is characterized in that it includes a driving transistor T1, switching transistors T2-T4, a storage capacitor Cs, scanning control lines Vcontrol1 and Vcontrol2, a light-emitting scanning control line Vems, a data line Vdata, a power supply line Vdd, ground line Vss, reference voltage line Vref, and an organic light-emitting diode OLED; wherein,
所述驱动晶体管T1的栅极与开关晶体管T2的漏极和存储电容Cs的A端相连，源极与存储电容Cs的B端、有机发光二级管OLED的阴极和开关晶体管T4的漏极相连，漏极与开关晶体管T3的源极相连；The gate of the driving transistor T1 is connected to the drain of the switching transistor T2 and the A terminal of the storage capacitor Cs, and the source is connected to the B terminal of the storage capacitor Cs, the cathode of the organic light emitting diode OLED and the drain of the switching transistor T4 , the drain is connected to the source of the switching transistor T3;
所述开关晶体管T2的栅极与扫描控制线Vcontrol1相连，源极与数据线Vdata相连；The gate of the switching transistor T2 is connected to the scanning control line Vcontrol1, and the source is connected to the data line Vdata;
所述开关晶体管T3的栅极与发光扫描控制线Vems相连，漏极与地线Vss相连；The gate of the switching transistor T3 is connected to the light-emitting scanning control line Vems, and the drain is connected to the ground line Vss;
所述开关晶体管T4的栅极与扫描控制线Vcontrol2相连，源极与参考电压线Vref相连；The gate of the switching transistor T4 is connected to the scanning control line Vcontrol2, and the source is connected to the reference voltage line Vref;
所述有机发光二级管OLED的阳极与电源线Vdd相连。The anode of the organic light emitting diode OLED is connected to the power line Vdd.
作为一种优选方案，所述驱动晶体管T1和开关晶体管T2～T4都为p型晶体管。As a preferred solution, the driving transistor T1 and the switching transistors T2 - T4 are all p-type transistors.
作为一种优选方案，所述p型晶体管为多晶硅薄膜晶体管或有机薄膜晶体管。As a preferred solution, the p-type transistor is a polysilicon thin film transistor or an organic thin film transistor.
本实用新型相对于现有技术具有如下的有益效果：Compared with the prior art, the utility model has the following beneficial effects:
本实用新型的像素驱动电路能够对驱动晶体管T1的非晶硅阈值电压漂移或者多晶硅阈值电压不均匀，以及因OLED器件长时间工作而退化造成的开启电压变大而引起的OLED显示不均进行补偿，且采用交流驱动的形式，使OLED仅在发光阶段发光，非发光阶段不发光，能有效地提高OLED的显示质量，延长OLED器件的寿命，为OLED实现大尺寸，高分辨率显示提供有效的解决办法。The pixel drive circuit of the utility model can compensate for the drift of the amorphous silicon threshold voltage of the drive transistor T1 or the unevenness of the polysilicon threshold voltage, as well as the OLED display unevenness caused by the degradation of the OLED device due to the long-term work and degradation of the turn-on voltage. , and the form of AC drive is adopted, so that the OLED only emits light in the light-emitting stage, and does not emit light in the non-light-emitting stage, which can effectively improve the display quality of the OLED, prolong the life of the OLED device, and provide an effective way for the OLED to achieve large-size, high-resolution display Solution.
附图说明Description of drawings
图1为本实用新型的像素驱动电路原理图。FIG. 1 is a schematic diagram of a pixel driving circuit of the present invention.
图2为本实用新型的像素驱动电路工作时序图。FIG. 2 is a working sequence diagram of the pixel driving circuit of the present invention.
具体实施方式Detailed ways
实施例1：Example 1:
如图1所示，本实施例的像素驱动电路包括包括驱动晶体管T1、开关晶体管T2～T4、存储电容Cs、扫描控制线Vcontrol1与Vcontrol2、发光扫描控制线Vems、数据线Vdata、电源线Vdd、地线Vss、参考电压线Vref以及有机发光二级管OLED；As shown in FIG. 1 , the pixel driving circuit of this embodiment includes a driving transistor T1, switching transistors T2-T4, a storage capacitor Cs, scanning control lines Vcontrol1 and Vcontrol2, a light-emitting scanning control line Vems, a data line Vdata, a power supply line Vdd, Ground wire Vss, reference voltage wire Vref and organic light-emitting diode OLED;
所述驱动晶体管T1的栅极与开关晶体管T2的漏极和存储电容Cs的A端相连，源极与存储电容Cs的B端、有机发光二级管OLED的阴极和开关晶体管T4的漏极相连，漏极与开关晶体管T3的源极相连；The gate of the driving transistor T1 is connected to the drain of the switching transistor T2 and the A terminal of the storage capacitor Cs, and the source is connected to the B terminal of the storage capacitor Cs, the cathode of the organic light emitting diode OLED and the drain of the switching transistor T4 , the drain is connected to the source of the switching transistor T3;
所述开关晶体管T2的栅极与扫描控制线Vcontrol1相连，源极与数据线Vdata相连；The gate of the switching transistor T2 is connected to the scanning control line Vcontrol1, and the source is connected to the data line Vdata;
所述开关晶体管T3的栅极与发光扫描控制线Vems相连，漏极与地线Vss相连；The gate of the switching transistor T3 is connected to the light-emitting scanning control line Vems, and the drain is connected to the ground line Vss;
所述开关晶体管T4的栅极与扫描控制线Vcontrol2相连，源极与参考电压线Vref相连；The gate of the switching transistor T4 is connected to the scanning control line Vcontrol2, and the source is connected to the reference voltage line Vref;
所述有机发光二级管OLED的阳极与电源线Vdd相连。The anode of the organic light emitting diode OLED is connected to the power line Vdd.
现结合图2的工作时序来说明本实施例的像素驱动电路在一帧时间内的工作过程：The working process of the pixel driving circuit in this embodiment within one frame time is now described in conjunction with the working sequence in FIG. 2:
有机发光二极管OLED的极性反转阶段：将扫描控制线Vcontrol1和Vcontrol2设置为低电平，分别把开关晶体管T2和T4打开，将发光扫描控制线Vems设置为高电平，把开关晶体管T3关闭；此时数据线Vdata通过开关晶体管T2向存储电容Cs的A端，即驱动晶体管T1的栅极写入Vdd电平，同时参考电压线Vref通过开关晶体管T4向有机发光二极管的阴极，即存储电容Cs的B端写入电压Vref，该电压Vref满足|Vref|>|Vdd|+|Vth|，其中Vth为驱动晶体管T1的阈值电压，这样OLED处于不发光的极性反转阶段；The polarity inversion stage of the organic light-emitting diode OLED: set the scanning control lines Vcontrol1 and Vcontrol2 to low level, turn on the switching transistors T2 and T4 respectively, set the light-emitting scanning control line Vems to high level, and turn off the switching transistor T3 At this time, the data line Vdata writes the Vdd level to the A terminal of the storage capacitor Cs through the switching transistor T2, that is, the gate of the drive transistor T1, and the reference voltage line Vref writes the Vdd level to the cathode of the organic light-emitting diode through the switching transistor T4, that is, the storage capacitor The voltage Vref is written into the B terminal of Cs, and the voltage Vref satisfies |Vref|>|Vdd|+|Vth|, where Vth is the threshold voltage of the driving transistor T1, so that the OLED is in the polarity inversion stage of not emitting light;
驱动晶体管T1的阈值电压锁存阶段：扫描控制线Vcontrol1继续保持低电平，使开关晶体管T2继续导通，扫描控制线Vcontrol2变为高电平，把开关晶体管T4关闭，发光扫描控制线Vems变为低电平，把开关晶体管T3打开；此时数据线Vdata继续向存储电容Cs的A端写入Vdd电平，存储电容Cs的B端通过驱动晶体管T1和开关晶体管T3向地线Vss放电，直到驱动晶体管T1的栅源电压Vgs等于其阈值电压Vth，此时驱动晶体管T1的阈值电压Vth被储存在存储电容Cs上；Threshold voltage latch stage of driving transistor T1: the scanning control line Vcontrol1 continues to maintain low level, so that the switching transistor T2 continues to be turned on, the scanning control line Vcontrol2 becomes high level, the switching transistor T4 is turned off, and the light-emitting scanning control line Vems becomes is low level, turn on the switching transistor T3; at this time, the data line Vdata continues to write the Vdd level to the A terminal of the storage capacitor Cs, and the B terminal of the storage capacitor Cs discharges to the ground line Vss through the driving transistor T1 and the switching transistor T3, Until the gate-source voltage Vgs of the driving transistor T1 is equal to its threshold voltage Vth, at this time the threshold voltage Vth of the driving transistor T1 is stored on the storage capacitor Cs;
灰阶数据电压写入阶段：扫描控制线Vcontrol1保持低电平，使开关晶体管T2继续导通，扫描控制线Vcontrol2保持高电平，使开关晶体管T4继续关闭，发光控制线Vems变为高电平，把开关晶体管T3关闭；此时数据线Vdata通过开关晶体管T2向驱动晶体管T1的栅极，即存储电容的A端写入数据电压信号Vdata，该数据电压信号通过由存储电容Cs和OLED器件的等效电容COLED级联所形成的电容耦合效应写入，此时驱动晶体管T1的栅源电压变成Vth+(COLED)/(Cs+COLED)*Vdata，并储存在存储电容Cs上，存储电容Cs锁存着驱动晶体管T1的阈值电压Vth；Gray-scale data voltage writing stage: the scanning control line Vcontrol1 keeps low level, so that the switching transistor T2 continues to conduct, the scanning control line Vcontrol2 keeps high level, making the switching transistor T4 continue to turn off, and the light control line Vems becomes high level , turn off the switch transistor T3; at this time, the data line Vdata writes the data voltage signal Vdata to the gate of the drive transistor T1, that is, the A terminal of the storage capacitor through the switch transistor T2, and the data voltage signal passes through the storage capacitor Cs and the OLED device. The capacitive coupling effect formed by the equivalent capacitor COLED cascade is written, and the gate-source voltage of the driving transistor T1 becomes Vth+(COLED )/(Cs+COLED )*Vdata at this time, and is stored on the storage capacitor Cs, The storage capacitor Cs latches the threshold voltage Vth of the driving transistor T1;
OLED发光阶段：扫描控制线Vcontrol1变为高电平，把开关晶体管T2关闭，扫描控制线Vcontrol2保持高电平，使开关晶体管T4继续关闭，发光控制线Vems变为低电平，把开关晶体管T3打开，数据线Vdata的电压信号变回Vdd；此时存储电容Cs维持着驱动晶体管T1的栅源电压，使驱动晶体管T1工作在饱和区，使OLED流过恒定的电流从而发出相应的灰阶亮度，其中流过OLED的电流表达式如下：OLED light-emitting stage: the scanning control line Vcontrol1 becomes high level, the switching transistor T2 is turned off, the scanning control line Vcontrol2 keeps high level, the switching transistor T4 continues to be closed, the light-emitting control line Vems becomes low level, and the switching transistor T3 is turned off. Open, the voltage signal of the data line Vdata changes back to Vdd; at this time, the storage capacitor Cs maintains the gate-source voltage of the driving transistor T1, making the driving transistor T1 work in the saturation region, so that the OLED flows a constant current to emit corresponding grayscale brightness , where the expression for the current flowing through the OLED is as follows:
IOLED=K*(Vgs-Vth)2IOLED =K*(Vgs-Vth)2
=K*(Vth+(COLED)/(Cs+COLED)*Vdata-Vth)2=K*(Vth+(COLED )/(Cs+COLED )*Vdata-Vth)2
=K*((COLED)/(Cs+COLED)*Vdata)2=K*((COLED )/(Cs+COLED )*Vdata)2
其中，K=1/2*Cox*up*W/L，为驱动晶体管T1工作在饱和区的增益，Cox为单位面积的绝缘层电容，W和L分别为驱动晶体管T1的沟道宽度和长度，up为驱动晶体管T1的载流子迁移率；由此可见，在参数K不变的情况下，流过OLED器件的电流IOLED只与输入的数据电压Vdata，存储电容Cs以及OLED的等效电容COLED相关，与驱动晶体管T1的阈值电压Vth和OLED器件的开启电压无关。Among them, K=1/2*Cox*up*W/L, which is the gain of the driving transistor T1 working in the saturation region, Cox is the insulation layer capacitance per unit area, W and L are the channel width and length of the driving transistor T1 respectively , up is the carrier mobility of the drive transistor T1; it can be seen that, under the condition of constant parameter K, the current IOLED flowing through the OLED device is only equivalent to the input data voltage Vdata, storage capacitor Cs and OLED Capacitance C is related toOLED and has nothing to do with the threshold voltage Vth of the driving transistor T1 and the turn-on voltage of the OLED device.
上述工作过程中，所述驱动晶体管T1工作在饱和区，开关晶体管T2～T4工作在线性区。During the above working process, the driving transistor T1 works in the saturation region, and the switching transistors T2-T4 work in the linear region.
以上所述，仅为本实用新型优选的实施例，但本实用新型的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本实用新型所公开的范围内，根据本实用新型的技术方案及其实用新型构思加以等同替换或改变，都属于本实用新型的保护范围。The above is only a preferred embodiment of the present utility model, but the scope of protection of the present utility model is not limited thereto. Any equivalent replacement or change of the technical solution and the concept of the utility model shall belong to the protection scope of the utility model.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015062296A1 (en)* | 2013-10-31 | 2015-05-07 | 京东方科技集团股份有限公司 | Ac-driven pixel circuit, drive method and display device |
| WO2016123852A1 (en)* | 2015-02-03 | 2016-08-11 | 深圳市华星光电技术有限公司 | Amoled pixel drive circuit |
| CN106251810A (en)* | 2016-08-19 | 2016-12-21 | 深圳市华星光电技术有限公司 | AMOLED display panel drive method, drive circuit and display device |
| CN108877680A (en)* | 2018-08-30 | 2018-11-23 | 京东方科技集团股份有限公司 | A pixel circuit and its driving method, display panel and display device |
| TWI707325B (en)* | 2019-07-01 | 2020-10-11 | 友達光電股份有限公司 | Light emitting diode driving circuit |
| US11443694B2 (en) | 2018-08-30 | 2022-09-13 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Pixel circuit, method for driving the same, display panel and display device |
- 2012
- 2012-12-17CNCN2012206992168Upatent/CN203085133U/ennot_activeExpired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015062296A1 (en)* | 2013-10-31 | 2015-05-07 | 京东方科技集团股份有限公司 | Ac-driven pixel circuit, drive method and display device |
| US9460655B2 (en) | 2013-10-31 | 2016-10-04 | Boe Technology Group Co., Ltd. | Pixel circuit for AC driving, driving method and display apparatus |
| WO2016123852A1 (en)* | 2015-02-03 | 2016-08-11 | 深圳市华星光电技术有限公司 | Amoled pixel drive circuit |
| CN106251810A (en)* | 2016-08-19 | 2016-12-21 | 深圳市华星光电技术有限公司 | AMOLED display panel drive method, drive circuit and display device |
| CN106251810B (en)* | 2016-08-19 | 2019-09-27 | 深圳市华星光电技术有限公司 | AMOLED display panel drive method, driving circuit and display device |
| CN108877680A (en)* | 2018-08-30 | 2018-11-23 | 京东方科技集团股份有限公司 | A pixel circuit and its driving method, display panel and display device |
| US10902779B2 (en) | 2018-08-30 | 2021-01-26 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Pixel circuit, method for driving the same, display panel and display device |
| US11443694B2 (en) | 2018-08-30 | 2022-09-13 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Pixel circuit, method for driving the same, display panel and display device |
| US11676540B2 (en) | 2018-08-30 | 2023-06-13 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Pixel circuit, method for driving the same, display panel and display device |
| TWI707325B (en)* | 2019-07-01 | 2020-10-11 | 友達光電股份有限公司 | Light emitting diode driving circuit |
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