CN202444421U

Movatterモバイル変換

Info

Publication number: CN202444421U
Application number: CN2012200052962U
Authority: CN
Inventors: 梁志刚; 郑崇峰
Original assignee: Leadsolar Energy Co Ltd
Current assignee: Leadsolar Energy Co Ltd
Priority date: 2012-01-06
Filing date: 2012-01-06
Publication date: 2012-09-19
Anticipated expiration: 2022-01-06

Abstract

The present utility model discloses a boost transformation circuit. The circuit comprises a clamping circuit, a transformer and an output circuit, the clamping circuit is connected on a primary side of a transformer, and the output circuit is connected on an auxiliary side of the transformer. The boost transformation circuit is characterized in that two diodes are connected on a B node of the primary side of the transformer, cathodes of the diodes are connected on the B node, anodes are connected on a capacitor of the clamping circuit, the anodes of the diodes are connected on the B node, and the cathodes are connected on the capacitor of the clamping circuit. As the two diodes are connected on the B node of the primary side of the transformer, high frequency oscillation generated by the primary side circuit can be inhibited through opening or closing the diodes. As clamping effects are realized by a DS1 and a DS2, current passing through the DS 1 and the DS 2 is small, thus the diodes with small current capacity can be chosen, losses will not be generated, and stable working characteristics of the prior fly-back converter will not be influenced.

Description

Boost conversion circuit and solar inverter

Technical field

The utility model relates to electric field, particularly, relates to a kind of boost conversion circuit and solar inverter that is used for solar power generation.

Background technology

In in recent years, be that master's renewable energy system obtains increasing application at world wide with wind energy and solar energy.For solar grid-connected electricity generation system; Except the centralized big-power solar power station that accounts for main flow at present; The distributed solar energy grid-connected system is because it can optimize the operating state of solar panel; Can improve the annual energy output of system as a rule, obtain day by day at present paying attention to and become one studying focus.Wherein, particularly noticeable and be used widely based on the distributed generation system of the little inverter of solar energy in the U.S..The core of the little inverter of solar energy is high efficiency booster circuit, inverter circuit and control technology thereof.Booster circuit mainly comprises the anti exciting converter and the circuit of deriving thereof.The active-clamp circuit of reversed excitation is used widely in a lot of middle low power conversion occasions because the no-voltage that can realize the former limit of transformer switching tube is opened the zero-current switching with the secondary diode.But; When this circuit was used for the little inverter of solar energy, its subject matter was that the vibration between the rectifier diode of transformer secondary and the leakage inductance on the former limit of transformer (perhaps resonant inductance) can make the secondary diode when turn-offing, bear higher oscillating voltage and the damage that is broken down by high-voltage.What the reason that causes vibration mainly was that secondary uses is high-voltage diode, and its junction capacitance is bigger.Have a meeting, an audience, etc. well under one's control in promotion and to close, it is enough big and produce the higher-order of oscillation with the resonant inductance of former limit circuit that this electric capacity is converted the capacitance on former limit.Use the occasion of carborundum SiC diode for secondary, because that the junction capacitance of SiC diode is compared the ordinary silicon diode is bigger, the final above-mentioned higher-order of oscillation is even more serious.

Traditional low side and high end clamp anti exciting converter such as Fig. 1, shown in Figure 2.Power switch pipe Q1 and Q2 can be FET MOSFET among the figure, also can be IGBT (insulated gate bipolar transistors), and perhaps other are suitable as the semiconductor device of high frequency power switch.Q1 and Q2 complementation turn on and off: when Q1 when opening, Q2 turn-offs; Vice versa.Open-minded for the no-voltage that realizes Q1, Lr is generally the extra resonance inductance.With the high end clamp circuit of reversed excitation is example, and the junction capacitance that secondary diode D1 has no progeny in the pass is

Figure DEST_PATH_826857DEST_PATH_IMAGE001

.This electric capacity produces the resonance far above switching frequency through transformer coupled to the former limit of transformer and with Lr.Provided the simulation waveform when not considering and considering diode

Figure DEST_PATH_693313DEST_PATH_IMAGE001

as 3 respectively with Fig. 4.Can find out; Under the situation of not considering

Figure DEST_PATH_533093DEST_PATH_IMAGE001

; Former secondary current voltage waveform is very clean, and vibration does not take place.When consider

Figure DEST_PATH_13753DEST_PATH_IMAGE001

influence the time, Fig. 4 shows that the higher-order of oscillation has all appearred in transformer former mid-side node B voltage and secondary diode terminal voltage.Simultaneously, high frequency ripple has appearred in primary current.The high frequency voltage vibration of Node B can increase the core loss of transformer resonant inductance; The vibration of diode terminal voltage possibly produce high voltage, causes the diode over-voltage breakdown.So, this higher-order of oscillation of should taking measures in the practical application to suppress.

The method of inhibition vibration commonly used is to add RC to absorb circuit at diode D1 two ends, and is as shown in Figure 5.

Figure DEST_PATH_306194DEST_PATH_IMAGE002

and absorption circuit composed of parallel ends in D1.Through rational value, the RC of adding absorbs circuit can make the higher-order of oscillation obtain decay.Fig. 6 has provided and has added the simulation waveform that RC absorbs back exciting converter behind the circuit.But the shortcoming of this method is to absorb circuit can bring extra loss.

The utility model content

The purpose of the utility model is; To the problems referred to above; A kind of boost conversion circuit is proposed; To be implemented under the situation that does not increase loss the advantage that suppresses the higher-order of oscillation that former limit circuit produces, a kind of inverter that uses this boost conversion circuit has been proposed simultaneously, be converted into the higher-order of oscillation in the alternating current to the influence of voltage to eliminate direct current.

For realizing above-mentioned purpose, the technical scheme that the utility model adopts is:

A kind of boost conversion circuit; Comprise clamp circuit, transformer and output circuit; This clamp circuit is connected the former limit of transformer; Output circuit is connected on the secondary of transformer; On the B node of the former limit of transformer, connect two diodes

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and diode

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; The negative electrode of said diode

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is connected on the B node; Its anode is connected on the electric capacity of clamp circuit; The anode of said diode is connected on the B node, and its negative electrode is connected on the electric capacity

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of clamp circuit.

Wherein, diode

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and diode can be replaced with gate-controlled switch.

According to the preferred embodiment of the utility model, said clamp circuit can be divided into high end clamp and low end clamp.

Preferred embodiment according to the utility model; Said high end clamp also comprises inductance

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, the transformer Tx1 with magnetizing inductance, power switch pipe

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, power switch pipe

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, diode

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and diode; Said inductance

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, power switch pipe

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and electric capacity

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are connected on the magnetizing inductance on former limit of above-mentioned transformer Tx1 on

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; Be connected in parallel on the two ends on inductance

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and the former limit of transformer Tx1 after said electric capacity

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and power switch pipe

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series connection; Said diode

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and diode can be extra interpolation with power switch pipe

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and power switch pipe diode connected in parallel, also can be the parasitic diode of power switch pipe self.

Preferred embodiment according to the utility model; Said low end clamp also comprises inductance

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, the transformer Tx1 with magnetizing inductance

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, power switch pipe, power switch pipe

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, diode

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and diode

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; Said inductance

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, power switch pipe

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and electric capacity

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; Said electric capacity

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and power switch pipe

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are connected in parallel on the two ends of power switch pipe; Said diode

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and diode

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can be extra interpolation with power switch pipe

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and power switch pipe

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diode connected in parallel, also can be the parasitic diode of power switch pipe self.

A kind of solar inverter; Comprise that monolithic or polylith solar panel are as input; This solar inverter also comprises main circuit and control circuit; Main circuit is that the above-mentioned boost conversion circuit and the inverter circuit of cascade are cascaded, and boost conversion circuit is output as the high-voltage dc voltage that is fit to be incorporated into the power networks, and said inverter circuit is the full bridge inverter based on MOSFET or IGBT switch that high frequency switches; Be connected with controller on the inverter, this controller is digitial controller DSP or high-performance single-chip microprocessor MCU.

Another kind of solar inverter; Comprise storage battery as input, this solar inverter also comprises main circuit and control circuit, and main circuit is that the above-mentioned boost conversion circuit and the inverter circuit of cascade are cascaded; Boost conversion circuit is output as the high-voltage dc voltage that is fit to be incorporated into the power networks; Said inverter circuit is the full bridge inverter based on MOSFET or IGBT switch that high frequency switches, and is connected with controller on the inverter, and this controller is digitial controller DSP or high-performance single-chip microprocessor MCU.

The technical scheme of the utility model is through connecting two diodes

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and diode

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on the B node of the former limit of transformer, the conducting through diode

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and diode and close the purpose of the higher-order of oscillation that plays the circuit generation of the former limit of inhibition.Because

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and

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just plays clamping action; The electric current that flows through them is less, so can select the less diode of current capacity for use.Event can not produce loss and can not influence the steady operation characteristic of former anti exciting converter.Be converted into the higher-order of oscillation in the alternating current to the influence of voltage and eliminated direct current based on the inverter of this boost conversion circuit.

Further feature of the utility model and advantage will be set forth in specification subsequently, and, partly from specification, become obvious, perhaps understand through implementing the utility model.The purpose of the utility model can realize through the structure that in the specification of being write, claims and accompanying drawing, is particularly pointed out and obtain with other advantages.

Through accompanying drawing and embodiment, the technical scheme of the utility model is done further detailed description below.

Description of drawings

Accompanying drawing is used to provide the further understanding to the utility model, and constitutes the part of specification, is used to explain the utility model with the embodiment of the utility model, does not constitute the restriction to the utility model.In the accompanying drawings:

Fig. 1 is the electrical schematic diagram of existing low side boost conversion circuit;

Fig. 2 is the electrical schematic diagram of existing high-end boost conversion circuit;

Fig. 3 for high-end boost conversion circuit shown in Figure 2 under the situation of not considering the D1 junction capacitance simulation waveform;

Fig. 4 be high-end boost conversion circuit shown in Figure 2 under the situation of considering the D1 junction capacitance simulation waveform;

Fig. 5 is the existing electrical schematic diagram that on the basis of Fig. 2, adds the high-end boost conversion circuit of RC absorption circuit;

Fig. 6 is the simulation waveform of high-end boost conversion circuit shown in Figure 5;

Fig. 7 is the electrical schematic diagram of the described low side boost conversion circuit of the utility model embodiment;

Fig. 8 is the electrical schematic diagram of the described high-end boost conversion circuit of the utility model embodiment;

Fig. 9 is the simulation waveform of high-end boost conversion circuit shown in Figure 8;

Figure 10 a is the said electrical schematic diagram that contains the solar inverter of high frequency switching inverter bridge leg of the utility model embodiment;

Figure 10 b is the internal frame diagram of Figure 10 a middle controller;

Figure 11 a is the said electrical schematic diagram that contains the general combining inverter of high frequency switching inverter bridge leg of the utility model embodiment;

Figure 11 b is the internal frame diagram of Figure 11 a middle controller;

Figure 12 a is the said electrical schematic diagram that contains the solar inverter of power frequency switching inverter bridge leg of the utility model embodiment,

Figure 12 b is the internal frame diagram of Figure 12 a middle controller;

Figure 13 a be after the parallel connection of said many booster converter outlet sides of the utility model embodiment with the system electrical schematic diagram of the high-power centralized inverter solar inverter of separate unit;

Figure 13 b is the internal frame diagram of MPPT controller among Figure 13 a;

Figure 13 c is the internal frame diagram of circuit control device among Figure 13 a.

Embodiment

Describe below in conjunction with the preferred embodiment of accompanying drawing, should be appreciated that preferred embodiment described herein only is used for explanation and explains the utility model, and be not used in qualification the utility model the utility model.

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with diode or be connected two gate-controlled switches; The negative electrode of diode

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is connected on the B node; Its anode is connected on the electric capacity

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of clamp circuit; The anode of diode

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is connected on the B node, and its negative electrode is connected on the electric capacity

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of clamp circuit.Clamp circuit can be divided into high end clamp and low end clamp.As shown in Figure 8; High end clamp comprises inductance

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, transformer Tx1 (magnetizing inductance is

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), power switch pipe power switch pipe

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, power switch pipe

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, diode

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and diode

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; Said inductance

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, power switch pipe

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and electric capacity

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are connected on the former limit of above-mentioned transformer Tx1; Be connected in parallel on the two ends on inductance and the former limit of transformer Tx1 after said electric capacity and power switch pipe

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series connection, said diode

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and diode

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are parallel connection with power switch pipe and power switch pipe

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respectively; They can be self the parasitic diodes of

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and

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, also can be the diodes that adds.Power switch pipe Q1 and Q2 can be FET MOSFET, also can be IGBT (insulated gate bipolar transistors), and perhaps other are suitable as the semiconductor device of high frequency power switch.As shown in Figure 7; Low end clamp also comprises inductance

Figure DEST_PATH_291171DEST_PATH_IMAGE008

, transformer Tx1 (magnetizing inductance is), power switch pipe

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, power switch pipe

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, diode

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and diode

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; Said inductance, power switch pipe

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and electric capacity

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are connected on the former limit of above-mentioned transformer Tx1; Said electric capacity

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and power switch pipe

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are connected in parallel on the two ends of power switch pipe

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, and said diode

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and diode

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are parallel connection with power switch pipe

and power switch pipe

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respectively; They can be self the parasitic diodes of

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and, also can be the diodes that adds.Power switch pipe Q1 and Q2 can be FET MOSFET, also can be IGBT (insulated gate bipolar transistors), and perhaps other are suitable as the semiconductor device of high frequency power switch.Shown in Figure 10 a to Figure 13 c; The utility model also provides three kinds of solar inverters and a kind of general combining inverter that proposes the booster converter technical scheme based on the utility model; Comprise control circuit, boost conversion circuit and inverter circuit; Said inverter circuit is connected the output of boost conversion circuit, and said control circuit is mainly realized the maximal power tracing control (MPPT) of solar panel, DC bus-bar voltage control and the control of inverter output grid-connected current.Said control circuit adopts dsp chip and single-chip microcomputer.Said inverter circuit is the full bridge inverter based on MOSFET or IGBT switch that high frequency switches. perhaps adopt the SCR of power frequency switching and the switching-over brachium pontis of MOSFET.Allow the separate unit booster circuit to be connected, also allow many booster circuits to be connected with the separate unit inverter circuit with the separate unit inverter circuit.

As shown in Figure 8, B node place has added two clamping diode D on the former limit of transformer_S1And D_S2As preceding at D₁Blocking interval, Lr meeting and C_D1The electric capacity that is refracted to former limit vibrates.In case the B point voltage oscillates to when being lower than zero volt, D_S1Understand conducting and the B point voltage is maintained zero volt.In like manner, when oscillating to, the B point voltage is higher than (V_In+ V_CL) time, D_S2Can conducting also be clamped at (V to the B point voltage_In+ V_CL).Final effect is that the amplitude of the B oscillating voltage of ordering is inhibited, thereby the oscillating voltage of secondary diode also is effectively suppressed.Because D_S1And D_S2Just play clamping action, the electric current that flows through them is less, so can select the less diode of current capacity for use.Under the ideal situation, this clamp circuit that adds can not produce loss and can not influence the steady operation characteristic of former anti exciting converter.

Fig. 9 has provided the simulation waveform of this patent circuit.As can be seen from the figure, to lie prostrate 60V zero (be V to the voltage oscillation scope of Node B_In+ V_CL) between, oscillating voltage has obtained very big inhibition.Turn-off device at secondary rectifier diode D1, its voltage oscillation spike has been clamped at a rational current potential, and the danger of over-voltage breakdown is eliminated.The clamp circuit that adds is except above-mentioned oscillating voltage inhibit feature, and in solar power generation was used, itself also had the function that prevents the solar panel reverse connecting protection.In case the translation circuit reversal connection that solar panel both positive and negative polarity and this patent propose, D_S1The meeting conducting, the solar panel electric current I_PVCan flow out from cell panel is anodal, flow through D_S1, Lr returns the cell panel negative pole.This situation is equivalent to the solar panel short circuit.Because short circuit current can not be delivered to the anti exciting converter secondary, and short circuit is harmless to solar panel, so this patent circuit can play the purpose of protection solar panel and converter self.

Shown in Figure 10 a, 10b, its input of a kind of solar inverter can be monolithic or polylith solar panel.Solar panel can be parallel connection or series connection or connection in series-parallel.This solar inverter mainly comprises main circuit and control circuit.Main circuit comprises the boost conversion circuit that proposes in the technical scheme of the utility model and the inverter circuit of cascade.The output of boost conversion circuit can be the high-voltage dc voltage that is fit to be incorporated into the power networks, and the inverter circuit of back level is the full bridge inverter based on MOSFET or IGBT switch that high frequency switches.The controller of inverter generally is to adopt digitial controller DSP or high-performance single-chip microprocessor MCU.In order to realize maximal power tracing function (MPPT), need the output voltage V of sampling solar panel_PVWith output current I_PVMPPT control program in DSP/MCU can be according to V_PVAnd I_PVProduce a control signal, that is to say and export to Q₁And Q₂Duty cycle signals.For electric current and the line voltage homophase that lets inverter export, realize that power factor is the power delivery that is incorporated into the power networks of unit one, need the voltage of sampling grid side and the output current of inverter.Voltage on line side is used for producing a time-base signal, and this time-base signal can be used for producing a sinusoidal signal with the line voltage homophase.Simultaneously, in order to realize the normal transmission of power, DC bus-bar voltage V_BUSAlso need by sampling and with a preset reference value V_REFCompare, behind the error adjuster, produce a control signal.This control signal cooperates with aforementioned sinusoidal signal, produces the benchmark of output current.The output current that sampling is returned and this current reference relatively after, through the error adjuster, output a control signal to switching tube Q₃~ Q₆Like this, can let solar panel be operated in maximum power point, also can guarantee output current and grid side voltage homophase.

Shown in Figure 11 a, 11b, a kind of more general combining inverter, its input can be various storage batterys or other power supply.This combining inverter mainly comprises main circuit and control circuit.Main circuit comprises the boost conversion circuit that proposes in the technical scheme of the utility model and the inverter circuit of cascade.The output of boost conversion circuit can be the high-voltage dc voltage that is fit to be incorporated into the power networks, and the inverter circuit of back level is the full bridge inverter based on MOSFET or IGBT switch that high frequency switches.The controller of inverter generally is to adopt digitial controller DSP or high-performance single-chip microprocessor MCU.In order to realize DC bus-bar voltage control, DC bus-bar voltage V_BUSTo be sampled, and with a preset reference value V_REFCompare.And, that is to say and export to Q through dc bus PI or control signal of PID compensating controller generation₁And Q₂Duty cycle signals.For electric current and the line voltage homophase that lets inverter export, realize that power factor is the power delivery that is incorporated into the power networks of unit one, need the voltage of sampling grid side and the output current of inverter.Voltage on line side is used for producing a time-base signal, and this time-base signal can be used for producing a sinusoidal signal with the line voltage homophase.Simultaneously, being transferred to the power of electrical network can be by control signal I_{O_REF}Set, this control signal cooperates with aforementioned sinusoidal signal, produces the benchmark of output current.The output current that sampling is returned and this current reference relatively after, through the error adjuster, output a control signal to switching tube Q₃~ Q₆Like this, the power that needs to the electrical network transmission be can guarantee, and grid-connected current and grid side voltage homophase made.Wherein Vbus signal such as Figure 10 a and Figure 11 a, this voltage signal is the output voltage of booster converter, it is as the input voltage of back level full-bridge inverter.

Can solar inverter be applied to vehicle-mounted; Or utilize photo-thermal power generation; Or different field such as wind-force, can be the alternating current that converts different output voltages and power grade from direct current to, be mains supply or so that connect electrical network for needing the device and the power devices of AC electric energy.For example: in vehicular applications, can utilize patent art, change into common 220VAC output to the output of the dc voltage of storage battery, so just can in vehicle environment, use general household electrical appliance.

Shown in Figure 12 a, 12b, its input of a kind of solar inverter can be monolithic or polylith solar panel.Solar panel can be parallel connection or series connection or connection in series-parallel.This solar inverter mainly comprises main circuit and control circuit.Main circuit comprises the boost conversion circuit that proposes in the technical scheme of the utility model and the inverter circuit of cascade.The output of boost conversion circuit can be the high-voltage dc voltage that is fit to be incorporated into the power networks, and the inverter circuit of back level is the full bridge inverter based on MOSFET and thyristor SCR switch that low frequency switches.The controller of inverter generally is to adopt digitial controller DSP or high-performance single-chip microprocessor MCU.In order to realize maximal power tracing function (MPPT), need the output voltage V of sampling solar panel_PVWith output current I_PVMPPT control program in DSP/MCU can be according to V_PVAnd I_PVProduce a control signal I_{O_REF}For electric current and the line voltage homophase that lets inverter export, realize that power factor is the power delivery that is incorporated into the power networks of unit one, need the voltage of sampling grid side and the output current of inverter.Voltage on line side is used for producing a time-base signal, and this time-base signal can be used for producing a sinusoidal signal with the line voltage homophase.This sinusoidal signal cooperates with aforementioned control signal, produces the benchmark I of output current_{GRID_REF}The output current I that sampling is returned_GRIDWith this current reference I_{GRID_REF}Relatively,, output a control signal to switching tube Q through the error adjuster₁~ Q₆Like this, can let solar panel be operated in maximum power point, also can guarantee output current and grid side voltage homophase.

Shown in Figure 13 a to 13c, it comprises booster circuit and high-power full bridge inverter that proposes in the technical scheme of many playscripts with stage directions utility model a kind of solar inverter.This solar inverter mainly comprises main circuit and control circuit.In this circuit structure, centralized high-power full bridge inverter can be connected with the boost conversion circuit that proposes in the technical scheme of many playscripts with stage directions utility model.The a plurality of booster circuits that propose in the present technique scheme can be parallel on the high voltage dc bus.The input of each booster circuit is independently monolithic or polylith solar panel.Solar panel can be parallel connection or series connection or connection in series-parallel.For whole system, the installation site that is connected to the solar panel of each booster circuit allows than big-difference, thereby optimizes the condition of work of solar panel, the maximization power output.This centralized high-power full bridge inverter is the full bridge inverter based on MOSFET or IGBT switch that high frequency switches.The MPPT controller of booster converter and the controller of inverter generally are to adopt digitial controller DSP or high-performance single-chip microprocessor MCU.For booster converter,, need the output voltage V of sampling solar panel in order to realize maximal power tracing function (MPPT)_PVWith output current I_PVMPPT control program in DSP/MCU can be according to V_PVAnd I_PVProduce a control signal, that is to say and export to Q₁And Q₂Duty cycle signals, thereby let solar array voltage be stabilized in a magnitude of voltage, the power output that this magnitude of voltage is corresponding be a maximum.Simultaneously,,, realize that power factor is the power delivery that is incorporated into the power networks of unit, need the voltage of sampling grid side and the output current of inverter for electric current and the line voltage homophase that lets inverter export for inverter circuit.Voltage on line side is used for producing a time-base signal, and this time-base signal can be used for producing a sinusoidal signal with the line voltage homophase.Simultaneously, in order to realize the normal transmission of power, DC bus-bar voltage V_BUSAlso need by sampling and with a preset reference value V_REFCompare, behind the error adjuster, produce a control signal.This control signal cooperates with aforementioned sinusoidal signal, produces the benchmark of output current.The output current that sampling is returned and this current reference relatively after, through the error adjuster, output a control signal to switching tube Q₃~ Q₆Like this, can let solar panel be operated in maximum power point, also can guarantee output current and grid side voltage homophase.

Among top Figure 10 a to Figure 13 c, be example all with the high end clamp that proposes in the utility model.Based on the application of the low end clamp that proposes in this patent similarly, as long as replace to low end clamp to the boost conversion circuit among Figure 10 a to Figure 13 c.

High end clamp described in its Chinese and low side clamp mainly are meant by clamping capacitance C_CLWith HF switch pipe Q₂The circuit of forming is different with the position that the input power supply is connected, and when this part circuit connects the positive input terminal of input power supply, is defined as high end clamp; When being connected to the negative input end of input power supply, be defined as low end clamp.

What should explain at last is: the above is merely the preferred embodiment of the utility model; Be not limited to the utility model; Although the utility model has been carried out detailed explanation with reference to previous embodiment; For a person skilled in the art, it still can be made amendment to the technical scheme that aforementioned each embodiment put down in writing, and perhaps part technical characterictic wherein is equal to replacement.All within the spirit and principle of the utility model, any modification of being done, be equal to replacement, improvement etc., all should be included within the protection range of the utility model.

Claims

1. boost conversion circuit; Comprise clamp circuit, transformer and output circuit; This clamp circuit is connected the former limit of transformer; Output circuit is connected on the secondary of transformer; It is characterized in that; On the B node of the former limit of transformer, connect two diodes

and diode

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; The negative electrode of said diode

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is connected on the B node; Its anode is connected on the electric capacity

of clamp circuit; The anode of said diode

Figure DEST_PATH_455913DEST_PATH_IMAGE002

Figure DEST_PATH_569362DEST_PATH_IMAGE004

of clamp circuit.

2. boost conversion circuit according to claim 1; It is characterized in that said diode

Figure DEST_PATH_307642DEST_PATH_IMAGE001

and diode

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can be replaced with gate-controlled switch.

3. boost conversion circuit according to claim 1 and 2 is characterized in that said clamp circuit can be divided into high end clamp and low end clamp.

4. boost conversion circuit according to claim 3; It is characterized in that; Said high end clamp also comprises inductance

, has transformer Tx1, power switch pipe

, power switch pipe

Figure DEST_PATH_940115DEST_PATH_IMAGE008

, diode

and the diode

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of magnetizing inductance for

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; Said inductance

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, power switch pipe

Figure DEST_PATH_375272DEST_PATH_IMAGE007

and electric capacity

Figure DEST_PATH_830524DEST_PATH_IMAGE003

are connected on the magnetizing inductance

Figure DEST_PATH_527085DEST_PATH_IMAGE006

on the former limit of above-mentioned transformer Tx1; Be connected in parallel on the two ends on inductance and the former limit of transformer Tx1 after the series connection of said electric capacity

Figure DEST_PATH_93195DEST_PATH_IMAGE004

and power switch pipe

Figure DEST_PATH_394864DEST_PATH_IMAGE008

, said diode

Figure DEST_PATH_955606DEST_PATH_IMAGE009

and diode

Figure DEST_PATH_325408DEST_PATH_IMAGE010

with power switch pipe

Figure DEST_PATH_481583DEST_PATH_IMAGE007

with power switch pipe is parallel connection.

5. boost conversion circuit according to claim 4; It is characterized in that; Said diode

Figure DEST_PATH_949790DEST_PATH_IMAGE009

and diode

Figure DEST_PATH_857703DEST_PATH_IMAGE010

can be extra interpolation with power switch pipe

Figure DEST_PATH_868385DEST_PATH_IMAGE007

and power switch pipe

Figure DEST_PATH_646460DEST_PATH_IMAGE008

6. boost conversion circuit according to claim 3; It is characterized in that; Said low end clamp also comprises inductance

Figure DEST_PATH_742592DEST_PATH_IMAGE005

, the transformer Tx1 with magnetizing inductance, power switch pipe, power switch pipe

Figure DEST_PATH_520558DEST_PATH_IMAGE008

, diode

Figure DEST_PATH_103986DEST_PATH_IMAGE009

and diode; Said inductance, power switch pipe and electric capacity

Figure DEST_PATH_532508DEST_PATH_IMAGE003

Figure DEST_PATH_585914DEST_PATH_IMAGE006

; Said electric capacity

Figure DEST_PATH_488011DEST_PATH_IMAGE004

and power switch pipe

Figure DEST_PATH_968671DEST_PATH_IMAGE008

are connected in parallel on the two ends of power switch pipe

Figure DEST_PATH_526691DEST_PATH_IMAGE007

, said diode

Figure DEST_PATH_931259DEST_PATH_IMAGE009

and diode

Figure DEST_PATH_625546DEST_PATH_IMAGE010

with power switch pipe

Figure DEST_PATH_542686DEST_PATH_IMAGE007

with power switch pipe is parallel connection.

7. boost conversion circuit according to claim 6; It is characterized in that; Said diode

Figure DEST_PATH_779949DEST_PATH_IMAGE009

and diode can be extra interpolation with power switch pipe and power switch pipe

Figure DEST_PATH_683817DEST_PATH_IMAGE008

8. solar inverter that comprises the described boost conversion circuit of claim 1 to 7; It is characterized in that; Comprise monolithic or polylith solar panel as input, this solar inverter also comprises main circuit and control circuit, and main circuit is that the above-mentioned boost conversion circuit and the inverter circuit of cascade are cascaded; Boost conversion circuit is output as the high-voltage dc voltage that is fit to be incorporated into the power networks; Said inverter circuit is the full bridge inverter based on MOSFET or IGBT switch that high frequency switches, and is connected with controller on the inverter, and this controller is digitial controller DSP or high-performance single-chip microprocessor MCU.

9. solar inverter that comprises the described boost conversion circuit of claim 1 to 7; It is characterized in that; Comprise storage battery as input, this solar inverter also comprises main circuit and control circuit, and main circuit is that the above-mentioned boost conversion circuit and the inverter circuit of cascade are cascaded; Boost conversion circuit is output as the high-voltage dc voltage that is fit to be incorporated into the power networks; Said inverter circuit is the full bridge inverter based on MOSFET or IGBT switch that high frequency switches, and is connected with controller on the inverter, and this controller is digitial controller DSP or high-performance single-chip microprocessor MCU.