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CN201584931U - Low-temperature semiconductor power generating device recycling waste heat of medium and small-sized equipment in industry to generate power - Google Patents

Low-temperature semiconductor power generating device recycling waste heat of medium and small-sized equipment in industry to generate power
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Publication number
CN201584931U
CN201584931UCN2009202134128UCN200920213412UCN201584931UCN 201584931 UCN201584931 UCN 201584931UCN 2009202134128 UCN2009202134128 UCN 2009202134128UCN 200920213412 UCN200920213412 UCN 200920213412UCN 201584931 UCN201584931 UCN 201584931U
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CN
China
Prior art keywords
thermoelectric conversion
small
conversion elements
heat
size
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN2009202134128U
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Chinese (zh)
Inventor
倪开禄
张闻斌
张剑
李长岭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GCL System Integration Technology Co Ltd
Original Assignee
SHANGHAI CHAORI SOLAR ENGINEERING Co Ltd
Shanghai Chaori Solar Energy Science & Technology Co Ltd
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Application filed by SHANGHAI CHAORI SOLAR ENGINEERING Co Ltd, Shanghai Chaori Solar Energy Science & Technology Co LtdfiledCriticalSHANGHAI CHAORI SOLAR ENGINEERING Co Ltd
Priority to CN2009202134128UpriorityCriticalpatent/CN201584931U/en
Application grantedgrantedCritical
Publication of CN201584931UpublicationCriticalpatent/CN201584931U/en
Anticipated expirationlegal-statusCritical
Expired - Lifetimelegal-statusCriticalCurrent

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Abstract

The utility model relates to a low-temperature semiconductor power generating device recycling the waste heat of medium and small-sized equipment in the industry to generate power. The semiconductor power generating device comprises a heat collecting device, a thermoelectric power generator, and a heat-sink cooling system, and is characterized in that the thermoelectric power generator comprises a plurality of high-performance P/N-type bismuth telluride-based thermoelectric conversion elements and adopts a rectangular laminated structure; the thermoelectric conversion elements are connected in series; ceramic plates are respectively placed at the tops and the bottoms of the thermoelectric conversion elements and clamped; heat-conducting silicon sheets are attached to the ceramic plates at the tops; and all the thermoelectric conversion elements are connected through aluminium electrodes; and a matrix of the connected thermoelectric conversion elements is filled with porous polymers and sealed. The device has the advantages that the low-temperature waste heat of the medium and small-sized equipment with the heat source temperature near 100 DEG C can be recycled and reutilized, so that the energy consumption is reduced.

Description

Reclaim the cryogenic semiconductor Blast Furnace Top Gas Recovery Turbine Unit (TRT) of industrial middle-size and small-size equipment cogeneration
Technical field
A kind of cryogenic semiconductor Blast Furnace Top Gas Recovery Turbine Unit (TRT) that reclaims industrial middle-size and small-size equipment cogeneration of the utility model design.
Background technology
In recent years, along with global economy ground high speed development to the energy particularly the demand of fossil energy increasing rapidly, and the energy crisis and the environmental problem that produce also more and more serious thereupon.But it is to have slatterned as waste heat or used heat greatly that the heat that the fossil energy in daily production produces has.And present semi-conductor thermoelectric material is to utilize the thermoelectric effect of material itself can realize the direct energy and material of changing between heat energy and the electric energy.The semiconductor heat electrical effect is to utilize Seebeck (Seebeck) effect, and promptly the temperature when p, two kinds of semiconductor two ends of n does not just have electrical potential difference at the semiconductor two ends simultaneously, just has electric current to flow through after connecting an external loop, realizes thermo-electric generation.Because semi-conductor thermoelectric material has that volume is little, reliability is high, pollution-free, noiselessness and the characteristics that have the temperature difference just can generate electricity are applied in this low-temperature cogeneration device the low temperature exhaust heat that can utilize traditional generator to use again effectively.Therefore developing the cryogenic semiconductor Blast Furnace Top Gas Recovery Turbine Unit (TRT) can reclaim industrial middle-size and small-size equipment cogeneration, reaches the effect that environment protecting and power-saving reduces discharging.
Summary of the invention:
The purpose of this utility model provides near the small-sized low-temperature generation device of a kind of heat source temperature 100 ℃, utilizes problem again with the waste heat that solves some middle-size and small-size equipment.The cryogenic semiconductor Blast Furnace Top Gas Recovery Turbine Unit (TRT) of industrial middle-size and small-size equipment cogeneration is reclaimed in the utility model design, comprise heat collector, thermoelectric generator and heat radiation cooling system are formed, it is characterized in that: thermoelectric generator has adopted a plurality of high performance P/N type bismuth telluride-based thermoelectric conversion elements, be rectangular flake structure, a plurality of thermoelectric conversion elements are connected in series, respectively place a potsherd and clamping at top and bottom, stick a slice thermal conductive silicon film on the potsherd of top, connect filling porous polymeric seal in the thermoelectric conversion element matrix that connects between each thermoelectric conversion element by the aluminium electrode.It is characterized in that: heat collector is the ceramic wafer at high performance P/N type bismuth telluride-based thermoelectric conversion element top.It is characterized in that: the heat radiation cooling system is the ceramic wafer of high performance P/N type bismuth telluride-based thermoelectric conversion element bottom.The utility model has the advantages that the low temperature exhaust heat that can reclaim near the middle-size and small-size equipment of heat source temperature 100 ℃, it can be utilized again, thereby reduce the consumption of the energy.
Description of drawings:
Fig. 1 is a structural representation of the present utility model, Fig. 2 is that 49 generating elements are connected in series, the matrix of having formed a 7*7, among Fig. 1 the 1, the 2nd, the bismuth telluride base semiconductor generating element of P type and N type, the 3rd, the aluminium electrode of Connection Element, the 4th, the porous polymer of filling, the 5th, top ceramic wafer, the 6th, bottom ceramic wafer, the 7th, thermal conductive silicon film, 8 is generating elements among Fig. 2, the 4th, and the porous polymer of filling.
Below in conjunction with accompanying drawing and construction embodiment the utility model is made detailed operation instruction.
Embodiment:
Comprise heat collector, thermoelectric generator and heat radiation cooling system composition among the figure, it is characterized in that: thermoelectric generator has adopted a plurality of high performance P/N type bismuth telluride-based thermoelectric conversion elements, be rectangular flake structure, a plurality of thermoelectric conversion elements are connected in series, respectively place a potsherd and clamping at top and bottom, stick a slice thermal conductive silicon film on the potsherd of top, connect filling porous polymeric seal in the thermoelectric conversion element matrix that connects between each thermoelectric conversion element by the aluminium electrode.It is characterized in that: heat collector is the ceramic wafer at high performance P/N type bismuth telluride-based thermoelectric conversion element top.It is characterized in that: the heat radiation cooling system is the ceramic wafer of high performance P/N type bismuth telluride-based thermoelectric conversion element bottom.After the low temperature exhaust heat of industrial middle-size and small-size equipment is delivered to the radiator of thermal conductive silicon film stickup, by the thermal conductive silicon film on the potsherd that is delivered to high performance P/N type bismuth telluride-based thermoelectric conversion element top, and produce the temperature difference up and down between the potsherd at high performance P/N type bismuth telluride-based thermoelectric conversion element, thereby high performance P/N type bismuth telluride-based thermoelectric conversion element has electric current to produce, and the ceramic wafer of high performance P/N type bismuth telluride-based thermoelectric conversion element bottom is that imbricated texture is to dispel the heat better, the ceramic wafer of keeping high performance P/N type bismuth telluride-based thermoelectric conversion element top and the bottom has the temperature difference, and continues to produce electric current output.

Claims (3)

1. reclaim the cryogenic semiconductor Blast Furnace Top Gas Recovery Turbine Unit (TRT) of industrial middle-size and small-size equipment cogeneration, comprise heat collector, thermoelectric generator and heat radiation cooling system are formed, it is characterized in that: thermoelectric generator has adopted a plurality of high performance P/N type bismuth telluride-based thermoelectric conversion elements, be rectangular flake structure, a plurality of thermoelectric conversion elements are connected in series, respectively place a potsherd and clamping at top and bottom, stick a slice thermal conductive silicon film on the potsherd of top, connect filling porous polymeric seal in the thermoelectric conversion element matrix that connects between each thermoelectric conversion element by the aluminium electrode.
CN2009202134128U2009-12-182009-12-18Low-temperature semiconductor power generating device recycling waste heat of medium and small-sized equipment in industry to generate powerExpired - LifetimeCN201584931U (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
CN2009202134128UCN201584931U (en)2009-12-182009-12-18Low-temperature semiconductor power generating device recycling waste heat of medium and small-sized equipment in industry to generate power

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
CN2009202134128UCN201584931U (en)2009-12-182009-12-18Low-temperature semiconductor power generating device recycling waste heat of medium and small-sized equipment in industry to generate power

Publications (1)

Publication NumberPublication Date
CN201584931Utrue CN201584931U (en)2010-09-15

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CN2009202134128UExpired - LifetimeCN201584931U (en)2009-12-182009-12-18Low-temperature semiconductor power generating device recycling waste heat of medium and small-sized equipment in industry to generate power

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
CN102104353A (en)*2009-12-182011-06-22上海超日太阳能科技股份有限公司Semiconductor generating device using low-temperature waste heat
CN102510243A (en)*2011-11-122012-06-20张英华Power generating device by waste heat of automobiles
CN102544346A (en)*2010-12-242012-07-04中国电子科技集团公司第十八研究所Bismuth telluride thermoelectric generator
CN102735891A (en)*2012-06-082012-10-17中国科学院电工研究所Temperature-difference micro-source applied to measurement of superconductive electrical equipment
CN103066892A (en)*2012-12-142013-04-24浙江大学External array-type thermoelectric generator single body provided with natural cold end
CN103219927A (en)*2013-03-212013-07-24中国科学院电工研究所Passive power supply for electrical device detection
CN104576001A (en)*2014-12-312015-04-29联合汽车电子有限公司Thermoelectric power generation cooling device of ignition coil

Cited By (11)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
CN102104353A (en)*2009-12-182011-06-22上海超日太阳能科技股份有限公司Semiconductor generating device using low-temperature waste heat
CN102544346A (en)*2010-12-242012-07-04中国电子科技集团公司第十八研究所Bismuth telluride thermoelectric generator
CN102510243A (en)*2011-11-122012-06-20张英华Power generating device by waste heat of automobiles
CN102510243B (en)*2011-11-122014-04-16张英华Power generating device by waste heat of automobiles
CN102735891A (en)*2012-06-082012-10-17中国科学院电工研究所Temperature-difference micro-source applied to measurement of superconductive electrical equipment
CN102735891B (en)*2012-06-082016-03-02中国科学院电工研究所A kind of temperature difference micro battery being applied to the electric device measuring of superconduction
CN103066892A (en)*2012-12-142013-04-24浙江大学External array-type thermoelectric generator single body provided with natural cold end
CN103066892B (en)*2012-12-142015-02-11浙江大学External array-type thermoelectric generator single body provided with natural cold end
CN103219927A (en)*2013-03-212013-07-24中国科学院电工研究所Passive power supply for electrical device detection
CN103219927B (en)*2013-03-212015-08-26中国科学院电工研究所A kind of passive power supply detected for electric equipment
CN104576001A (en)*2014-12-312015-04-29联合汽车电子有限公司Thermoelectric power generation cooling device of ignition coil

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Legal Events

DateCodeTitleDescription
C14Grant of patent or utility model
GR01Patent grant
PP01Preservation of patent right

Effective date of registration:20130912

Granted publication date:20100915

RINSPreservation of patent right or utility model and its discharge
PD01Discharge of preservation of patent

Date of cancellation:20140912

Granted publication date:20100915

RINSPreservation of patent right or utility model and its discharge
C56Change in the name or address of the patentee
CP03Change of name, title or address

Address after:201406 Shanghai city Fengxian District Jianghai Economic Zone

Patentee after:Assist prosperous integrated Science and Technology Co., Ltd.

Patentee after:Shanghai Chaori Solar Engineering Co., Ltd.

Address before:201406, Shanghai, Fengxian District South Town Wang Yang Economic Zone, flag Road, No. 738

Patentee before:Shanghai Chaori Solar Energy Science & Technology Co., Ltd.

Patentee before:Shanghai Chaori Solar Engineering Co., Ltd.

CX01Expiry of patent term

Granted publication date:20100915

CX01Expiry of patent term

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