CN201536351U - K-band ultra-low temperature low-noise amplifier - Google Patents

Abstract

A K-band ultra-low temperature low-noise amplifier comprises a shielded box body, wherein a cavity is formed in the box body; a microwave circuit is arranged in the cavity; an input waveguide and an output terminal are arranged on the box body; the input waveguide is connected to the signal input end of the microwave circuit, and the output terminal is connected to the signal output end thereof; the microwave circuit is sintered on a dielectric plate and comprises a micro-strip converting probe and an amplifier; and signals are sent to the micro-strip converting probe through the input waveguide, and then are sent into the amplifier and the output terminal through the micro-strip. The amplifier is a novel communication component which has the excellent characteristics of high operating frequency, short wavelength, low power consumption, low noise, high communication capacity, ultra-low temperature work environment and the like, and can greatly reduce the integral noise factor of a communication system; and when the amplifier is applied to the field of mobile communication, the sensitivity of a receiver and user capability can be obviously increased, the operating range of the communication system can be improved, and the blockage and dropped call can be reduced.

Description

K wave band ultralow temperature low noise amplifier

Technical field

The utility model belongs to millimetric wave device and technical field, and technical system advanced person's novel received communication parts, and what be specifically related to is a kind of K wave band ultralow temperature low noise amplifier.

Background technology

Amplifier is operated under the ultralow temperature, helps reducing the preamplifier noise, makes receiver front end have good noiseproof feature.The performance of conventional low noise amplifier is limited by amplifier tube and circuit loss, and limit noise factor is difficult to descend, the restriction that general noise reduction measure that adopts such as cooling are subject to the system works environment.Domestic at present, common in the world its normal minimum operating temperature of amplifier between-40 ℃～-60 ℃, and state-of-the-art in the world at present K wave band (its noise factor of 20～24GHz) low noise amplifiers costs an arm and a leg at 1.6dB.(its noise factor of 20～24GHz) low noise amplifiers is at 2.0dB for domestic state-of-the-art K wave band, pass through appropriate design, (20～24GHz) low noise amplifier working temperatures are-200 ℃ (liquid nitrogen temperatures) can to make the K wave band, this moment its noise factor≤1.0dB, greatly improved the ability of system's reception weak signal, thereby reduce the bore of antenna reflective face, reduce system bulk, quality, given full play to the low temperature noiseproof feature of crystal amplifier tube and linear element.

Summary of the invention

The purpose of this utility model is the deficiency at existing product, provides a kind of technical indicator better K wave band millimeter wave low noise amplifier, its compact conformation, debugging easily, the requirement that can improve K wave band millimeter wave high-speed wideband wireless receiving system effectively.The technical solution of the utility model is as follows:

A kind of K wave band ultralow temperature low noise amplifier comprises the box body of shielding being provided with cavity in the box body, is provided with microwave circuit in the cavity; Box body is provided with input waveguide and lead-out terminal, and the signal input part of described microwave circuit connects input waveguide, and the signal output of microwave circuit connects described lead-out terminal.

Described microwave circuit sintering is on dielectric-slab; Described microwave circuit comprises microstrip transitions probe and amplifier, and described signal imports the microstrip transitions probe into by input waveguide, passes to amplifier through little band then, passes to lead-out terminal through little band again.

Described amplifier comprises two-stage mmic chip and corresponding individual layer electric capacity, and two-stage mmic chip and the cascade of corresponding individual layer electric capacity are located at little being with; The power input of described two-stage mmic chip is with the external power source that is coupled through a feedthrough capacitor.

Described mmic chip is a GaAs material millimeter wave chip.

Described lead-out terminal is a 2.92mm K joint.

The material of described dielectric-slab is the thermal coefficient of expansion kovar alloy material close with the GaAs material heat expansion; It can be the RT5880 type microwave board of ROGERS company.

Described input waveguide is the FD220 Waveguide interface.The broadside of described waveguide mouth is vertical with the direction that the microstrip transitions probe inserts.

The preferred GaAs material of the utility model mmic chip millimeter wave chip, its technological level is very high, function admirable, the circuit of design is fairly simple, does not need too much to consider the problem of MMIC and microstrip line coupling aspect, is easy to debugging.

The utlity model has good technical indicator, debugging is convenient, and cost is low.Be a kind of operating frequency height, the novel communication component of outstanding characteristics such as wavelength is short, power consumption is little, noise is low, message capacity is big, ultralow temperature operational environment, these parts can greatly reduce communication system overall noise coefficient, be applied in moving communicating field and can significantly increase the sensitivity of receiver, improve the operating distance of communication system and increase user capacity, reduce and stop up and call drop.

Description of drawings

Fig. 1 is an electrical block diagram of the present utility model among the embodiment;

Fig. 2 is a front view of the present utility model among the embodiment;

Fig. 3 is a rearview of the present utility model among the embodiment;

Fig. 4 is a theory diagram of the present utility model among the embodiment.

Embodiment

A kind of K wave band ultralow temperature low noise amplifier comprises thebox body 1 of shielding being provided with cavity in thebox body 1, is provided with microwave circuit in the cavity;Box body 1 is provided with input waveguide and lead-out terminal, and the signal input part of described microwave circuit connectsinput waveguide 6, and the signal output of microwave circuit connects described lead-out terminal 5.

Described microwave circuit sintering is on dielectric-slab 4; Described microwave circuit comprises microstrip transitions probe 2 and amplifier, and described signal imports microstrip transitions probe 2 into byinput waveguide 6, passes to amplifier through little band then, passes to lead-outterminal 5 through little band again.

As Fig. 1, described amplifier comprises two-stage mmic chip 3.1 and 3.2 and corresponding individual layer electric capacity, two-stage mmic chip 3.1 and 3.2 and the cascade of corresponding individual layer electric capacity be located at little being with; The power input of described two-stage mmic chip is with the external power sources (feedthrough capacitor 8 is by 9 Spring Festival holidays of the wiring on box body external power source) that are coupled through afeedthrough capacitor 8.

This routine MIC chip is a GaAs material millimeter wave chip; Lead-out terminal is a 2.92mm K joint; The material of dielectric-slab is the thermal coefficient of expansion kovar alloy material close with the GaAs material heat expansion, specifically is the RT5880 type microwave board of ROGERS company; Input waveguide is the FD220 Waveguide interface, and the broadside of described Waveguide interface is vertical with the direction that microstrip transitions probe 2 inserts.This routine microwave board has very high intensity and ambient temperature performance.

This routine whole amplifier adopts the integrated mmic chip cascade of two-stage to constitute, and adopts sintering process that it is assemblied on the medium of kovar alloy material (its thermal coefficient of expansion is close with the GaAs material thermal expansion coefficient), again with the assembling of shielding box body.The FD220 Waveguide interface is adopted in input, and K interface of 2.92mm is adopted in output, makes total compact, has the little lightweight characteristics of volume.

In concrete the application, the utility model packed into contain in the airtight container of inert gas, to place again in the liquid nitrogen, input, output, biasing are drawn out to outside home by the measure of glue envelope.

Prove that by experiment the utility model can reach following technical indicator:

Working temperature :-200 ℃ (liquid nitrogen temperature)

Working frequency range: 20～24GHz;

Noise factor :≤1.0dB;

Gain: 〉=35dB;

Flatness :≤± 1.5dB;

Input port: FD-220

Output port: SMA-K

I/O standing wave :≤2.0:

P_-1dB： ≥8dBm；

Power consumption :≤0.5W

Layman's size :≤49.5 * 22.4 * 15mm³

Claims (8)

1. K wave band ultralow temperature low noise amplifier comprises the box body of shielding being provided with cavity in the box body, is provided with microwave circuit in the cavity; Box body is provided with input waveguide and lead-out terminal, and the signal input part of described microwave circuit connects input waveguide, and the signal output of microwave circuit connects described lead-out terminal;

It is characterized in that described microwave circuit sintering is on dielectric-slab; Described microwave circuit comprises microstrip transitions probe and amplifier, and described signal imports the microstrip transitions probe into by input waveguide, passes to amplifier through little band then, passes to lead-out terminal through little band again.

2. K wave band ultralow temperature low noise amplifier according to claim 1 is characterized in that described amplifier comprises two-stage mmic chip and corresponding individual layer electric capacity, and two-stage mmic chip and the cascade of corresponding individual layer electric capacity are located at little being with; The power input of described two-stage mmic chip is with the external power source that is coupled through a feedthrough capacitor.

3. K wave band ultralow temperature low noise amplifier according to claim 2 is characterized in that described mmic chip is a GaAs material millimeter wave chip.

4. according to claim 1 or 2 or 3 described K wave band ultralow temperature low noise amplifiers, it is characterized in that described lead-out terminal is a 2.92mm K joint.

5. K wave band ultralow temperature low noise amplifier according to claim 3, the material that it is characterized in that described dielectric-slab are the thermal coefficient of expansion kovar alloy materials close with the GaAs material heat expansion.

6. K wave band ultralow temperature low noise amplifier according to claim 5 is characterized in that described dielectric-slab is the RT5880 type microwave board of ROGERS company.

7. according to claim 1 or 2 or 3 described K wave band ultralow temperature low noise amplifiers, it is characterized in that described input waveguide is the FD220 Waveguide interface.

8. K wave band ultralow temperature low noise amplifier according to claim 7 is characterized in that the broadside of described waveguide mouth is vertical with the direction that the microstrip transitions probe inserts.

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