CN201174415Y - Half-mode Substrate Integrated Waveguide Stereo Power Divider Using Step Transition - Google Patents

Abstract

Translated fromChinese

本实用新型公开了一种采用阶梯过渡的半模基片集成波导立体功分器。该功分器包括覆有金属贴片的介质基片、3个波导－微带过渡部分，以及位于介质中的一块金属隔板，上下金属贴片通过设在介质基片上的1行高度递增的金属化通孔相连，3个波导－微带过渡端为连接在上下金属贴片输入输出端口的三个锥形金属片。本实用新型在介质基片的基础上实现了半模基片集成波导，其工作在9GHz到12GHz的X波段上。这种结构成本低廉，具有较高的Q值，较低的损耗，且工作在较宽的带宽，适用于微波毫米波集成电路的设计。半模基片集成波导立体功分器的体积只有传统的基片集成波导平面功分器的四分之一，而厚度不变，更容易集成于微波毫米波组件与系统中。

The utility model discloses a half-mode substrate integrated waveguide three-dimensional power divider adopting step transition. The power splitter includes a dielectric substrate covered with metal patches, three waveguide-microstrip transition parts, and a metal partition in the medium. The upper and lower metal patches pass through a row of increasing heights on the dielectric substrate The metallized through holes are connected, and the three waveguide-microstrip transition ends are three tapered metal sheets connected to the input and output ports of the upper and lower metal patches. The utility model realizes the half-mode substrate integrated waveguide on the basis of the dielectric substrate, which works in the X-band of 9GHz to 12GHz. This structure has low cost, high Q value, low loss, and works in a wide bandwidth, and is suitable for the design of microwave and millimeter wave integrated circuits. The volume of the half-mode substrate-integrated waveguide three-dimensional power splitter is only a quarter of that of the traditional substrate-integrated waveguide planar power splitter, while the thickness remains the same, making it easier to integrate into microwave and millimeter-wave components and systems.

Description

Translated fromChinese

采用阶梯过渡的半模基片集成波导立体功分器Half-mode Substrate Integrated Waveguide Stereo Power Divider Using Step Transition

技术领域technical field

本实用新型属于采用阶梯过渡的半模基片集成波导立体功分器主要用于微波毫米波组件与系统的设计中，特别是一种采用阶梯过渡的半模基片集成波导立体功分器。The utility model belongs to a half-mode substrate integrated waveguide three-dimensional power divider adopting step transition, which is mainly used in the design of microwave and millimeter wave components and systems, in particular to a half-mode substrate integrated waveguide three-dimensional power divider adopting step transition.

背景技术Background technique

微波毫米波功分器在微波毫米波天线的馈线和毫米波仪表中得到了大量的应用，它是馈线系统中的一个关键部件，特别是在微波毫米波集成电路中，天线阵列的馈电需要用到低损耗、宽频带的功分器。常用的微带功分器在中心频率上它的特性较为理想，但是一旦发生频偏，整个功分器的性能都会变差，从而影响整个系统的性能。利用基片集成波导技术可以制作出高Q值、低损耗、宽频带的功率分配器，并降低加工成本和工艺难度，而在此基础上的半模基片集成波导结构更能减小其一半的体积，使其更适用于微波毫米波组件与系统的设计。Microwave and millimeter wave power dividers have been widely used in the feeder of microwave and millimeter wave antennas and millimeter wave instruments. It is a key component in the feeder system, especially in microwave and millimeter wave integrated circuits. A low-loss, wide-band power splitter is used. The commonly used microstrip power splitter has ideal characteristics at the center frequency, but once a frequency deviation occurs, the performance of the entire power splitter will deteriorate, thereby affecting the performance of the entire system. Using substrate integrated waveguide technology can produce high-Q, low-loss, wide-band power dividers, and reduce processing costs and process difficulties, and on this basis, the half-mode substrate integrated waveguide structure can reduce it by half The volume makes it more suitable for the design of microwave and millimeter wave components and systems.

实用新型内容Utility model content

本实用新型的目的在于提供一种工作在9GHz到12GHz的X波段上采用阶梯过渡的半模基片集成波导立体功分器。The purpose of the utility model is to provide a half-mode substrate integrated waveguide three-dimensional power splitter which works in the X-band of 9GHz to 12GHz and adopts step transition.

实现本实用新型目的的技术解决方案为：一种采用阶梯过渡的半模基片集成波导立体功分器，包括两排长方形金属贴片，第一排的长方形金属贴片中的第一至第六金属贴片之间互联并呈阶梯状分布，位于两端的第一、六金属贴片的两侧边沿靠边分别与第一、二锥形金属贴片的宽边连成一整体，覆于介质板的一面；第二排的长方形金属贴片中的第七至第十二金属贴片之间互联并呈阶梯状分布，一端的第十二金属贴片的边沿靠边与第三锥形金属贴片的宽边相连成一整体，覆于介质板的另一面，该第三锥形金属贴片与第二锥形金属贴片呈上下对称；所述的两排长方形金属贴片整体通过穿过介质基片的一排金属化通孔相连，并在介质板[1]的内部正中间设置金属隔板。The technical solution to realize the purpose of this utility model is: a half-mode substrate integrated waveguide three-dimensional power divider adopting a step transition, including two rows of rectangular metal patches, the first to the second row of rectangular metal patches in the first row The six metal patches are interconnected and distributed in a ladder shape. The edges on both sides of the first and sixth metal patches at both ends are respectively connected with the wide sides of the first and second tapered metal patches to form a whole, covering the dielectric board one side; the seventh to twelfth metal patches in the second row of rectangular metal patches are interconnected and distributed in a ladder shape, and the edge of the twelfth metal patch at one end is close to the edge of the third tapered metal patch The wide sides of the third tapered metal patch are connected into a whole and covered on the other side of the dielectric board. The third tapered metal patch is symmetrical up and down with the second tapered metal patch; the two rows of rectangular metal patches pass through the dielectric substrate as a whole A row of metallized through holes of the chip are connected, and a metal partition is set in the middle of the inside of the dielectric board [1].

本实用新型与现有技术相比，其显著优点为：(1)利用了矩形金属波导具有高Q值、低损耗的特点，在介质基片的基础上实现了半模基片集成波导，其工作在9GHz到12GHz的X波段上。(2)这种结构成本低廉，具有较高的Q值，较低的损耗，且工作在较宽的带宽，适用于微波毫米波集成电路的设计。(3)半模基片集成波导立体功分器的体积只有传统的基片集成波导平面功分器的四分之一，而厚度不变，更容易集成于微波毫米波组件与系统中。Compared with the prior art, the utility model has the remarkable advantages as follows: (1) Utilizes the characteristics of high Q value and low loss of the rectangular metal waveguide, realizes the half-mode substrate integrated waveguide on the basis of the dielectric substrate, and its Works on the X-band from 9GHz to 12GHz. (2) This structure is low in cost, has a high Q value, low loss, and works in a wide bandwidth, and is suitable for the design of microwave and millimeter wave integrated circuits. (3) The volume of the half-mode substrate-integrated waveguide three-dimensional power splitter is only a quarter of that of the traditional substrate-integrated waveguide planar power splitter, while the thickness remains the same, making it easier to integrate into microwave and millimeter-wave components and systems.

下面结合附图对本实用新型作进一步详细描述。Below in conjunction with accompanying drawing, the utility model is described in further detail.

附图说明Description of drawings

图1是根据本实用新型提出的装置的俯视图。Fig. 1 is a top view of the device proposed according to the utility model.

图2是根据本实用新型提出的装置的平视图。Fig. 2 is a plan view of the device proposed according to the utility model.

图3是本实用新型金属化通孔示意图。Fig. 3 is a schematic diagram of the metallized through hole of the present invention.

具体实施方式Detailed ways

结合图1和图2，本实用新型采用阶梯过渡的半模基片集成波导立体功分器，由内部覆有多层阶梯金属贴片的介质层和表层金属贴片组成，介质层内外各层金属贴片通过垂直的窄带金属条依次相连成一整体，且在介质层中间插入一块金属隔离板；上下金属贴片整体通过设在介质基片上的1行高度不等的金属化通孔相连，整个结构呈多层立体分布，即包括两排长方形金属贴片，第一排的长方形金属贴片中的第一至第六金属贴片2、3、4、5、6、7之间互联并呈阶梯状分布，位于两端的第一、六金属贴片2、7的两侧边沿靠边分别与第一、二锥形金属贴片8、9的宽边连成一整体，覆于介质板1的一面；第二排的长方形金属贴片中的第七至第十二金属贴片11、12、13、14、15、16之间互联并呈阶梯状分布，一端的第十二金属贴片12的边沿靠边与第三锥形金属贴片17的宽边相连成一整体，覆于介质板1的另一面，该第三锥形金属贴片17与第二锥形金属贴片9呈上下对称；所述的两排长方形金属贴片整体通过穿过介质基片2的一排金属化通孔相连，并在介质板1的内部正中间设置金属隔板10。Combining Figures 1 and 2, the utility model adopts a step-transition half-mode substrate integrated waveguide three-dimensional power splitter, which is composed of a dielectric layer covered with multi-layer stepped metal patches and a surface metal patch. The inner and outer layers of the dielectric layer The metal patches are sequentially connected into a whole through vertical narrow-band metal strips, and a metal isolation plate is inserted in the middle of the dielectric layer; the upper and lower metal patches are connected through a row of metallized through holes with different heights on the dielectric substrate. The structure is distributed in multiple layers, that is, it includes two rows of rectangular metal patches, and the first tosixth metal patches 2, 3, 4, 5, 6, and 7 in the first row of rectangular metal patches are interconnected and form a Ladder-shaped distribution, the first andsixth metal patches 2 and 7 at both ends are connected to the wide sides of the first and secondtapered metal patches 8 and 9 respectively, covering one side of thedielectric plate 1 ; The seventh totwelfth metal patches 11, 12, 13, 14, 15, and 16 in the second row of rectangular metal patches are interconnected and distributed in a ladder shape, and thetwelfth metal patch 12 at one end The edge is connected to the wide side of the thirdtapered metal patch 17 to form a whole, covering the other side of thedielectric plate 1. The thirdtapered metal patch 17 and the second tapered metal patch 9 are vertically symmetrical; The above two rows of rectangular metal patches are integrally connected through a row of metallized through holes passing through thedielectric substrate 2 , and ametal partition 10 is arranged in the middle of thedielectric board 1 .

结合图3，本实用新型采用阶梯过渡的半模基片集成波导立体功分器，介质板1长度L1为88.5mm，宽度W2为10-12mm；金属隔板10长度L2为45-48mm，第一金属贴片2长度L5为17mm，第二至第五金属贴片3、4、5、6长度L6为3.5mm，第六金属贴片7长度L7为17.5mm，总长L3为48.5-50mm；第一至第三锥形金属贴片8、9、17的长度L4都为13.9mm，两条平行边W3和W4分别为2.4-2.6mm和1.5-1.6mm；金属化通孔到第六矩形金属贴片7远边垂直距离W1为7.2-7.5mm；第七金属贴片11的长度为37mm，宽度为10mm，介质板1厚度h为1mm，介电常数为2.2，各金属通孔高度h1、h2、h3、h4、h5、h6依次为0.5mm、0.6mm、0.7mm、0.8mm、0.9mm和1mm，金属通孔直径d为2mm，孔间距S为3.5-3.7mm。In conjunction with Fig. 3, the utility model adopts the semi-mode substrate integrated waveguide three-dimensional power divider with step transition, the length L1 of thedielectric plate 1 is 88.5mm, and the width W2 is 10-12mm; the length L2 of themetal partition 10 is 45-48mm, the first The length L5 of ametal patch 2 is 17 mm, the length L6 of the second tofifth metal patches 3, 4, 5, and 6 is 3.5 mm, the length L7 of thesixth metal patch 7 is 17.5 mm, and the total length L3 is 48.5-50 mm; The length L4 of the first to thirdtapered metal patches 8, 9, and 17 is 13.9mm, and the two parallel sides W3 and W4 are 2.4-2.6mm and 1.5-1.6mm respectively; the metallized through hole reaches the sixth rectangle The vertical distance W1 of the far side of themetal patch 7 is 7.2-7.5mm; the length of theseventh metal patch 11 is 37mm, the width is 10mm, the thickness h of thedielectric plate 1 is 1mm, the dielectric constant is 2.2, and the height of each metal through hole is h1 , h2, h3, h4, h5, h6 are 0.5mm, 0.6mm, 0.7mm, 0.8mm, 0.9mm and 1mm in turn, the diameter d of the metal through hole is 2mm, and the hole spacing S is 3.5-3.7mm.

实施例：结合图1、图2和图3，以工作频段在9-12GHz的多层半模基片集成波导立体功分器为例，详细说明本实用新型的结构。Embodiment: With reference to Fig. 1, Fig. 2 and Fig. 3, taking a multi-layer half-mode substrate integrated waveguide three-dimensional power splitter with a working frequency band of 9-12 GHz as an example, the structure of the utility model is described in detail.

厚度h为1mm的介质板1中沿其一边插入一块长度为45mm的金属隔板10，介质板1的长度为88.5mm，介质板1的宽度为15mm，金属隔板10的宽度为10mm。介质板1内部和表层覆有由各矩形金属贴片构成的整体金属贴片(参见图2)。X轴上方的金属贴片由第一至第六金属贴片2、3、4、5、6、7及第一、二锥形金属贴片8、9和两条金属导带组成，各长方形金属贴片用z方向上等高为0.1mm、宽度为10mm的金属横条相连成一整体，各长方形金属贴片的宽度均为10mm，第一金属贴片2的长度为17mm，第二至第五金属贴片3、4、5、6的长度均为3.5mm，第六金属贴片7的长度为17.5mm，第一、二锥形贴片8、9的尺寸相同，两条平行边分别为1.5mm和4.7mm，长度为13.9mm。介质板1的另一面的金属贴片整体由第七至第十二金属贴片11、12、13、14、15、16和第三锥形金属贴片17，其中第九至第十二长方形金属贴片13、14、15、16的尺寸与第二至第五金属贴片3、4、5、6相同，第八金属贴片12的尺寸与第六金属贴片7相同，第三锥形贴片17的尺寸与第一、二锥形贴片8、9相同，第七金属贴片11的长度为37mm，宽度为10mm。位于介质板1两侧的金属贴片整体通过一行金属化通孔相连，金属孔到矩形贴片的远边距离为7.2mm，在介质平面上沿x轴方向直线分布。金属孔直径d为2mm，孔间距S为3.5mm。Ametal partition 10 with a length of 45 mm is inserted along one side of thedielectric board 1 with a thickness h of 1 mm. The length of thedielectric board 1 is 88.5 mm, the width of thedielectric board 1 is 15 mm, and the width of themetal partition 10 is 10 mm. The interior and surface of thedielectric board 1 are covered with integral metal patches composed of rectangular metal patches (see FIG. 2 ). The metal patches above the X axis are composed of the first tosixth metal patches 2, 3, 4, 5, 6, 7 and the first and secondtapered metal patches 8, 9 and two metal conduction strips, each rectangular The metal patches are connected as a whole with metal bars with a contour of 0.1 mm and a width of 10 mm in the z direction. The width of each rectangular metal patch is 10 mm. The length of thefirst metal patch 2 is 17 mm. The lengths of the fivemetal patches 3, 4, 5, and 6 are all 3.5 mm, the length of thesixth metal patch 7 is 17.5 mm, the dimensions of the first and secondtapered patches 8 and 9 are the same, and the two parallel sides are respectively are 1.5mm and 4.7mm, and the length is 13.9mm. The metal patch on the other side of thedielectric board 1 consists of seventh totwelfth metal patches 11, 12, 13, 14, 15, 16 and a thirdtapered metal patch 17, wherein the ninth to twelfth rectangular The size of themetal patch 13,14,15,16 is the same as the second to thefifth metal patch 3,4,5,6, the size of theeighth metal patch 12 is the same as thesixth metal patch 7, the third cone The size of theshaped patch 17 is the same as that of the first and secondtapered patches 8 and 9, and the length of theseventh metal patch 11 is 37mm and the width is 10mm. The metal patches located on both sides of thedielectric board 1 are connected through a row of metalized through holes. The distance from the metal holes to the far side of the rectangular patch is 7.2mm, and they are distributed linearly along the x-axis direction on the medium plane. The metal hole diameter d is 2mm, and the hole spacing S is 3.5mm.

信号从左边的输入端输入，在半模基片集成波导中通过正中间的金属隔板分为两路信号，分别从上下两个输出端输出，实现等功分。我们选用的介质其介电常数为2.2，结果表明在9.2GHz-10.6GHz频段内，S11小于-20dB，两个输出端口的传输系数都接近-3dB，相对带宽接近15％。The signal is input from the input terminal on the left, and in the half-mode substrate integrated waveguide, it is divided into two signals through the metal partition in the middle, and output from the upper and lower output terminals respectively to realize equal power division. The dielectric constant of the medium we choose is 2.2. The results show that in the 9.2GHz-10.6GHz frequency band, the S11 is less than -20dB, the transmission coefficients of the two output ports are close to -3dB, and the relative bandwidth is close to 15%.

Claims (2)

1, a kind of three-dimensional power splitter of half module substrate integrated wave guide that adopts the ladder transition, it is characterized in that: comprise two platoon leader's square metal pasters, interconnected and stepped distribution between first to the 6th metal patch [2,3,4,5,6,7] in first row's the rectangle metal patch, the dual-side that is positioned at first, six metal patches [2,7] at two ends is linked to be an integral body along the broadside that keeps to the side respectively with first and second cone-shaped metal paster [8,9], is overlying on the one side of dielectric-slab [1]; Interconnected and stepped distribution between the 7th to the 12 metal patch [11,12,13,14,15,16] in second row's the rectangle metal patch, the edge of the 12 metal patch [12] of one end keeps to the side to be linked into a whole with the broadside of third hand tap shape metal patch [17], be overlying on the another side of dielectric-slab [1], this third hand tap shape metal patch [17] is symmetry up and down with the second cone-shaped metal paster [9]; Described two platoon leader's square metal paster integral body link to each other by the row's plated-through hole that passes dielectric substrate [2], and in the middle, inside of dielectric-slab [1] metal partion (metp) [10] are set.

2, the three-dimensional power splitter of the half module substrate integrated wave guide of employing ladder according to claim 1 transition, it is characterized in that: dielectric-slab [1] length L 1 is 88.5mm, and width W 2 is 10-12mm; Metal partion (metp) [10] length L 2 is 45-48mm, and first metal patch [2] length L 5 is 17mm, and second belongs to paster [3,4,5,6] length L 6 to five metals is 3.5mm, and the 6th metal patch [7] length L 7 is 17.5mm, and length overall L3 is 48.5-50mm; First length L 4 to third hand tap shape metal patch [8,9,17] all is 13.9mm, and two parallel edges W3 and W4 are respectively 2.4-2.6mm and 1.5-1.6mm; Plated-through hole to the six rectangular metal paster [7] distal edge vertical range W1 are 7.2-7.5mm; The length of the 7th metal patch [11] is 37mm, width is 10mm, dielectric-slab [1] thickness h is 1mm, dielectric constant is 2.2, each metal throuth hole height h1, h2, h3, h4, h5, h6 are followed successively by 0.5mm, 0.6mm, 0.7mm, 0.8mm, 0.9mm and 1mm, the metal throuth hole diameter d is 2mm, and pitch of holes S is 3.5-3.7mm.

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