Embodiment
[0019] principle of the invention has provided device and the correlation technique that reduces energy consumption in the PLD.Fig. 1 shows the The general frame of thePLD 103 of the illustrative embodiment according to the present invention.PLD 103 comprisesconfiguration circuit 130, config memory (CRAM) 133,control circuit 136, FPGA (Field Programmable Gate Array) 106,programmable interconnect 109 and I/O circuit 112.In addition, as required, PLD 103 can comprise test/debug circuit 115, one ormore processor 118, one ormore telecommunication circuit 121, one ormore storer 124, one ormore controller 127.
[0020] FPGA (Field Programmable Gate Array) 106 comprises the configurable or Programmable Logic Device of polylith, for example look-up table (LUT), product term logic, multiplexer (MUX), logic gate, register, storer, or the like.As required, FPGA (Field Programmable Gate Array) 106 and other module and the which couple inprogrammable interconnect 109 and the PLD 103.As will be described in further detail below,programmable interconnect 109 in FPGA (Field Programmable Gate Array) 106 various modules andPLD 103 in or provide configurable interconnection (coupling mechanism) between outer other circuit.
[0021] the various operations in thecontrol circuit 136 control PLD 103.Under the monitoring ofcontrol circuit 136,PLD configuration circuit 130 utilizes configuration data to programme or disposes the function (configuration data is from external source, for example obtains in memory device, the main frame etc.) of PLD 103.Configuration data is used to store the information among theCRAM 133 usually.The content ofCRAM 133 has been determined the function ofPLD 103 each modules, for example FPGA (Field Programmable Gate Array) 106 andprogrammable interconnect 109.
[0022] the I/O circuit 112 that it will be understood by those skilled in the art that of benefiting from instructions of the present invention can comprise various I/O equipment or circuit.I/O circuit 112 can be coupled with the various piece ofPLD 103, for example FPGA (Field Programmable Gate Array) 106 and programmable interconnect 109.I/O circuit 112 provides a kind of mechanism and circuit for each modules in thePLD 103, with external circuit or devices communicating.
[0023] test/debug circuit 115 helps to test and checks each module and circuit in the PLD 103.Test/debug circuit 115 can comprise multiple module or the circuit that those those of ordinary skills that benefit from instructions of the present invention are known.For example, as required, test/debug circuit 115 can be included in PLD 103 power up or reset after be used to carry out the circuit of test.As required, test/debug circuit 115 also can comprise coding and parity checker.
[0024] PLD 103 can comprise one or more processors 118.Processor 118 can be coupled in other module and the circuit in the PLD 103.As benefit from instructions of the present invention those skilled in the art recognized,processor 118 can receive data and information fromPLD 103 inside or circuit external, and come process information in various modes.One ormore processors 118 can constitute a digital signal processor (DSP).As required, DSP can realize various signal processing tasks, for example compresses, decompression, Audio Processing, Video processing, Filtering Processing or the like.Benefit from the understood by one of ordinary skill in the art of instructions of the present invention as those, as required, people can utilize the logical resource of PLD 103 to realize the function of DSP, and do not use special-purpose DSP.
[0025] PLD 103 also can comprise one or more telecommunication circuits 121.Telecommunication circuit 121 can help to carry out data and message exchange between the various circuit ofPLD 103 inside andPLD 103 circuit external, as benefits from the understood by one of ordinary skill in the art of instructions of the present invention.
[0026] PLD 103 can further comprise one ormore storeies 124 and one or more controller 127.Storer 124 allows various data and the information (for example user data, intermediate result, result of calculation etc.) in the storage PLD 103.What as required,storer 124 can be for particle type orpiece formula.Controller 127 allows and PLD external circuit interface, and its operation and various function are controlled.For example, as required,controller 127 can constitute a memory controller, itself and outside Synchronous Dynamic Random Access Memory (SDRAM) interface, and Synchronous Dynamic Random Access Memory controlled.
Notice that [0027] Fig. 1 shows the simplified block diagram of PLD 103.Therefore, PLD 103 can comprise other module and circuit, as one of ordinary skill in understanding.The example of sort circuit comprise clock generating and distributor circuit, redundant circuit, or the like.And as required,PLD 103 can comprise mimic channel, other digital circuit and/or hybrid circuit.
[0028] Fig. 2 shows the plane figure of PLD 103 according to an illustrative embodiment of the invention.PLD 103 comprises the FPGA (Field Programmable Gate Array) 106 that is arranged as two-dimensional array.Theprogrammable interconnect 109 that is arranged as horizontal interconnect and perpendicular interconnection is coupled each module of FPGA (Field Programmable Gate Array) 106 mutually.In illustrative embodiment, can have hierarchical structure according to PLD of the present invention.That is to say that each module of FPGA (Field Programmable Gate Array) 106 can comprise littler or more granular programmed logical module or circuit successively.
[0029]programmable interconnect 109 provides a kind of mechanism or the mechanism of intercommunication mutually for the various modules of PLD 103 (see figure 1)s.Generally speaking, the configuration data of PLD 103 (or programming data) has been determined the function that realized by its resource (comprising FPGA (Field Programmable Gate Array) 106 andprogrammable interconnect 109).Utilize the configurable circuit module, for example multiplexer, transmission gate and transmission transistor (pass transistor),programmable interconnect 109 can the various circuit inPLD 103 in route signal.
[0030] Fig. 3 shows a circuit arrangement 200, and it has illustrated the routing function of an interconnection 109.Interconnection 109 comprises adrive circuit 203, and theacceptor circuit 205 bycoupling mechanism 109A communication.As benefiting from it is understood by one of ordinary skill in the art that as required of instructions of the present invention,coupling mechanism 109A can adopt various forms.Many factors are depended in the selection of embodiment, for example Qi Wang application, design and specification etc.For example, coupling mechanism can comprise conductor, lead or the conductive traces onPLD 103, interconnection etc. as required.
[0031] indrive circuit 203 and theacceptor circuit 205 each can be respectively with the PLD103 (see figure 1) in a source module communicate by letter for example FPGA (Field Programmable Gate Array) 106,processor 118,storer 124 etc. with object module.That is to say thatdrive circuit 203 receives the signal from certain source among the PLD103, and be sent to acceptorcircuit 205 bycoupling mechanism 109A signal (one or more).Acceptor circuit 205 offers a target thePLD 103 with the described signal that receives fromcoupling mechanism 109A.
[0032], 109 often comprises a large amount of electronic packages so interconnect, for example mos field effect transistor (MOSFET) becauseinterconnection 109 spreads all over PLD 103 (no matter being in a section or at littler interconnection section).These transistorized operations can cause relatively large power consumption in the PLD 103.More specifically, these transistorized operations can cause quiescent dissipation (normally owing to leak cause) and dynamic power consumption (normally causing owing to transistorized switch), as benefit from instructions of the present invention those of ordinary skills understood.
[0033] Fig. 4 shows a circuit arrangement 208, and it helps to analyze the first order modeling of interconnection 109.Circuit arrangement 208 109A that will interconnect is modeled as a resistor-capacitor circuit network that comprises resistor 210 and capacitor 213.Resistor 210 can comprise the output impedance ofdrive circuit 203 and the impedance of coupling mechanism 109A.Capacitor 213 can comprise the input capacitance of electric capacity and theacceptor circuit 205 ofcoupling mechanism 109A.
[0034] supposition resistor 210 have a negligible value (that is, and the relative stronger buffer area in thedrive circuit 203, the 109A of low-impedance coupling mechanism, or the like), people just can carry out modeling to the power consumption of drive circuit 203.If the frequency via the signaling switch ofcoupling mechanism 109A communication is f, then the value of power consumption P is:
P=CV2f
Wherein, C and V represent the electric capacity of capacitor 213 and the output voltage ofdrive circuit 203 respectively.Notice that above-mentioned equation supposition has complementary circuit (being that voltage is swung) at the output ofdrive circuit 203 between earth potential andV.Acceptor circuit 205 has the circuit that is similar to drivingcircuit 203 usually, therefore owing to power consumption takes place switching signal.
Notice that [0035] shown in above-mentioned equation, the switch power consumption increases along with the increase of C, V and/or f.The physical property ofcoupling mechanism 109A (it is often determined by the layout ofPLD 103, to finish signal communication and distribution) has been determined the value (deviser attempts minimizing C as much as possible) of capacitor C.Similarly, the value of frequency f depends on that PLD user wants the function that realizes.
[0036] still, people can influence the power consumption ofinterconnection 109 by the value that reduces V.Notice that power P is along with square increase of voltage V, shown in thecurve 250 of energy consumption among Fig. 5 (P)-voltage (V).Therefore, reduce V and power consumption is had more significant effect than same C of reduction or f.
[0037] in traditional interconnection, described signal is at earth potential and supply voltage (VDD) between the swing.As will be described in further detail below, principle of the present invention partly be to provide with voltage amplitude be reduced on the earth potential, supply voltage (VDD) under device and correlation technique.In other words, the present invention low-voltage V of applied voltage amplitude that interconnectsLWith high voltage VHBe respectively:
VL=VGND+ Δ1With
VH=VDD-Δ2
Wherein, Δ1And Δ2The value of expression depends on used particular electrical circuit topological structure and design.
[0038] Fig. 6 shows acircuit arrangement 255, and it has described an illustrative embodiment according to a kind ofinterconnection 109 of the presentinvention.Drive circuit 203 incircuit arrangement 255 comprises two-stage, predriver circuit or a regulatingcircuit 260A (first order) and alevel converter circuit 263A (second level).Predrivercircuit 260A drive level converter circuit 263.Level converter circuit 263A andcoupling mechanism 109A coupling, and the signal that will obtain from one or more input signals is supplied with coupling mechanism 109A.The signal of supplying withcoupling mechanism 109A has the voltage amplitude of a minimizing.
[0039]coupling mechanism 109A will offeracceptor circuit 205 from the signal thatdrive circuit 203 receives.Acceptor circuit 205 comprises a predriver circuit or the regulatingcircuit 260B first order as it.As required, predrivercircuit 260B can have and similar circuit arrangement ofpredriver circuit 260A and topological structure.The signal that predrivercircuit 260B receives fromcoupling mechanism 109A according to it obtains one or more signals.Predrivercircuit 260B offerslevel converter circuit 263B with these signals (one or more).Level converter circuit 263B provides the output signal of a low-amplitude signal as interconnection 109.As required,level converter circuit 263B can have and similar circuit arrangement oflevel converter circuit 263A and topological structure.
[0040] Fig. 7 shows acircuit arrangement 265, and it has described another illustrative embodiment according to a kind ofinterconnection 109 of the present invention.Different with the circuit arrangement among Fig. 6 is thatcircuit arrangement 265 provides standard amplitude or conventional amplitude logical signal (for example, to have rail-to-rail or VDDSignal to ground connection, voltage amplitude) as its output.
[0041] more specifically, thedrive circuit 203 incircuit arrangement 255 comprises two-stage, predriver circuit or a regulatingcircuit 260A (first order) and alevel converter circuit 263A (second level).Predrivercircuit 260A drive level converter circuit 263.Level converter circuit 263A andcoupling mechanism 109A coupling, and the signal that will obtain from one or more input signals is supplied with coupling mechanism 109A.The signal of supplying withcoupling mechanism 109A has the voltage amplitude of a minimizing.
[0042]coupling mechanism 109A offersacceptor circuit 205 to the signal that receives from drive circuit 203.Acceptor circuit 205 comprises a predriver circuit or the regulatingcircuit 260B first order as it.As required, predrivercircuit 260B can have and similar circuit arrangement ofpredriver circuit 260A and topological structure.The signal that predrivercircuit 260B receives fromcoupling mechanism 109A according to it obtains one or more signals, and provides these signals (one or more) at its output terminal.Predrivercircuit 260B andPLD circuit 270 are coupled, and it is driven.PLD circuit 270 is at its input end (one or more) acceptance criteria amplitude logical signal.
[0043] Fig. 8 and Figure 10-Figure 13 provide the circuit arrangement according to the illustrative embodiment of interconnection circuit of the present invention, and this interconnection circuit comprises low energy-consumption driver and interlock circuit.Fig. 9 shows the curve map of some signal that uses in certain embodiments, and this will be described in more detail below.
Notice that [0044] each among Fig. 8 and Figure 10-Figure 13 embodiment includesdrive circuit 203 and acceptor circuit 205.Each drive circuit 203 (for example 203A/203B) comprises predriver circuit 260 (for example 260A/260B) and level converter circuit 263 (for example 263A/263B).Level translator 263A among Fig. 8 and Figure 10-Figure 13 and 263B are similarly, and operation is also similar.In addition, the embodiment among Fig. 8 and Figure 10-Figure 13 comprises the transistor 301,304 and 307 of similar layout, and the interlock circuit that drives these transistorized grids, and these interlock circuits are operation in a similar fashion also.
[0045] with reference to the circuit arrangement among the figure 8 280,predriver circuit 260A comprisestransistor 283A, 286A, 289A and292A.Level translator 263A comprisestransistor 295A and298A.Transistor 286A and 289A form a transverter, as benefit from instructions of the present invention those of ordinary skills understood.Transistor 292A andtransistor 289A series coupled (and use identical gate signal, i.e. the input signal of circuit arrangement 280).
[0046]transistor 292A has a relative higher threshold voltage (VT), be sometimes referred to as high VT(HVT) transistor.For example,transistor 292A can have a threshold voltage, and it departs from the nominal threshold voltage+80mV that is used for specific fabrication process.
[0047] has the combination oftransistor 289A with thetransistor 292A of a nominal threshold voltage, allowpredriver circuit 260A a non-zero input voltage to be thought the signal of logic low with a relative higher threshold voltage.For example,predriver circuit 260A can have about V to oneTPThe voltage of (the transistorized nominal threshold voltage of PMOS) value is thought the signal of logic low.Under the situation that lackstransistor 292A,transistor 289A is V in the value of input voltageTP(perhaps approximate VTP) time possibly can't turn-off.
[0048] in addition, the relative higher threshold voltage oftransistor 292A helps to prevent that it from opening or conducting, leaks (that is, it has reduced crow bar electric current (crow-bar current)) thereby prevent to produce the electric current that causes power consumption to increase.In other words, relatively higher threshold voltage helps to reduce the leakage current in the tandem compound oftransistor 289A and 292A, thereby has reduced the leakage current of describedtransverter.Transistor 283A has served as a drawing device, and utilizes regeneration feedback, recovers the input signal of logic high.
[0049] more specifically, the input of a logic high can have a voltage lower than nominal voltage (for example causing owing to being coupled by MUX or transmission transistor).The regenerative operation oftransistor 283A makes this voltage return to the signal (V of a logic highDD).This transverter andtransistor 283A have been combined to form one and half locks (half lock), as benefit from instructions of the present invention those of ordinary skills understood.
[0050] the outputdrive level converter 263A oftransverter.Level translator 263A comprises thetransistor 295A and thetransistor 298A of series coupled.Level translator 263A and transverter remove and have exchanged outside PMOS and the nmos device (be that the PMOS device occupies down lamination or storehouse (stack), and nmos device being formed superimposed layer), have similar topological structure.Because this topological structure, the output oflevel translator 263A has a voltage amplitude that has reduced.
[0051] more specifically, the output voltage oflevel translator 263A has one at (VGND+ VTP) and (VDD-VTN) between voltage amplitude, V whereinTPAnd VTNThe threshold voltage of representingtransistor 298A and 295A respectively.Therefore,level translator 263A has than typical cmos circuit (promptly at VGNDAnd VDDBetween) littler voltage amplitude.As mentioned above, the voltage amplitude that reduces helps to reduce power consumption.
[0052]predriver circuit 260B comprisestransistor 283B, 286B, 289B and 292B.Level translator 263 comprisestransistor 295B and 298B.Predrivercircuit 260B andlevel translator 263B operate similarly withpredriver circuit 260A andlevel translator 263A respectively.According to simulation result, in one embodiment,circuit arrangement 280 can provide the energy than classic method saving 29%.
[0053]coupling mechanism 109A andtransistor 301 and 304 are coupled to predriver 260B with level translator 263A.Storageunit driving transistors 301 among theCRAM 133 and 304 grid.Therefore,transistor 301 and 304 has played the effect of transmission transistor effectively.According to the data inCRAM 133 storage unit,transistor 301 and 304 can optionally be coupled to predriver 260B with level translator 263A.Notice that people can use the transistor and the storage unit of varying number or layout as required, as benefit from instructions of the present invention those of ordinary skills understood.
[0054]transistor 307 has served as and has pulled up transistor.Under the situation thattransistor 301 and 304 all turn-offs,transistor 307 can be pulled to the input ofpredriver 260B near supply voltage, and prevents that therefore this input is unsteady or have uncertain value.The grid of signal NFREEZE driving transistors 307.Notice that the embodiment among Figure 10-Figure 13 has used similar circuit arrangement.
[0055] the signal NFREEZE that shows in the 103 initial power-up stages of PLD of Fig. 9 is with respect to the sequential chart of supply voltage.At t=t0The place,supply voltage 313 beginnings are to its end value VDDRise.t0Afterwards, at t=t1Constantly, signal 310 (NFREEZE) begins to one near VDDEnd value rise.But, at t=t0And t=t1The centre, signal 310 has the value of a logic low.As a result,transistor 307 is opened, and the input ofpredriver 263B is increased near VDD, the perhaps value of a logic high.Notice that people can utilize many other to be different from sequential shown in Figure 9 and signaling plan as required, as benefit from those of ordinary skills of the present invention and understand.
[0056] Figure 10 shows a circuit arrangement 320 in the illustrative embodiment that is used in interconnection circuit of the present invention, comprises low energy-consumption driver and interlock circuit.Circuit arrangement 320 comprisesdrive circuit 203 and acceptor circuit 205.Drive circuit 203 comprisespredriver circuit 260A and level translator263A.Acceptor circuit 205 comprisespredriver circuit 260B and level translator263B.Predriver circuit 260A and 260B have similar topological structure, and operation in an identical manner.Equally,level translator 263A and 263B have similar topological structure and operation similarly.
[0057] predrivercircuit 260A comprisestransistor 283A, 325A, 330A, 335A and 340A.The circuit thattransistor 283A, 325A, 330A and 335A are constituted is similar to thepredriver 260A among Fig. 8.Therefore, transistor 335A has a higher relatively VT(HVT), it causes energy consumption to reduce, as mentioned above.But thepredriver 260A among Figure 10 comprises an extra transistor 340A.
[0058] drain electrode end of transistor 340A and VDDBe coupled.It is (V at a low input transition period that transistor 340A presets node 350A (that is the node between transistor 330A and the hvt transistor 335A)DD-VTN) (in some sense, transistor 340A has played the effect of Schmidt trigger).That is to say that (input of this circuit has V when input has a logic low stateTPValue), transistor 340A remains on (V with node 350DD-VTN).Under the situation of logic low input, transistor 340A makes transistor 330A obtain a higher source voltage.High source voltage makes transistor 330A have higher threshold voltage, and therefore has less static energy consumption.
[0059] more specifically, the threshold voltage VT of transistor 340A depends on many factors, for example the voltage between its source electrode and the body (body).Establishing an equation down provides threshold voltage as body-source voltage function:
Perhaps, people can be write as equation 1 according to source electrode-bulk voltage:
Wherein:
VT (0)=threshold voltage when source electrode-bulk voltage (perhaps body-source voltage) is made as zero.
γ=body the factor, a constant that depends on the bulk doped degree.
φF=one constant.
vBS=total body-source voltage (promptly comprising AC and DC component);
And
vSB=total source electrode-bulk voltage (promptly comprising AC and DC component).
[0060] notes, as body-source voltage vBS(perhaps source electrode-bulk voltage vSB) when equalling zero, threshold voltage VTEqual VT (0)Shown in equation 2, for a limited body factor gamma, transistorized threshold voltage is along with source electrode-bulk voltage vSBIncrease and increase.The increase of threshold voltage has reduced leakage current, and has therefore reduced static energy consumption.Therefore, also therefore improve its source electrode-bulk voltage v by the source voltage that improves transistor 330ASB, transistor 340A has reduced the energy consumption of predriver circuit 260A.According to simulation result, in one embodiment,circuit arrangement 280 can be saved 35% energy than classic method.
[0061]predriver circuit 260B comprises transistor 325B, 330B, 335B and340B.Level translator 263B comprisestransistor 295B and 298B.The operation ofpredriver circuit 260B andlevel translator 263B is similar withlevel translator 263A topredriver 260A respectively.According to simulation result, in one embodiment,circuit arrangement 280 can be saved 35% energy than classic method.
[0062] Figure 11 shows one and is used in according to the circuit arrangement in the illustrative embodiment of interconnection circuit of thepresent invention 360, and it comprises low energy-consumption driver and interlockcircuit.Circuit arrangement 360 comprisesdrive circuit 203 and acceptor circuit 205.Drive circuit 203 comprisespredriver circuit 260A and level translator263A.Acceptor circuit 205 comprisespredriver circuit 260B and level translator263B.Predriver circuit 260A has similar topological structure with 260B and operates in a kind of identical mode.Equally,level translator 263A and 263B have similar topological structure and operation similarly.
[0063] predrivercircuit 260A comprisestransistor 363A-384A.Transistor 372A and 375A are coupled as the series connection lamination that a complementary signal drives.Different with the predriver circuit of describing among each figure of front,predriver 260A does not comprise half lock.On the contrary, independent circuit utilizes the complement gate signal to come the grid of drivingtransistors 372A and 375A.
[0064] more specifically,transistor 363A, 366A and 369A drive the grid of PMOS transistor 372A.The circuit of drivingtransistors 372A comprises a series connection lamination of nmos pass transistor (beingtransistor 366A and 369A).On the contrary, the grid oftransistor 384A, 378A and 381A driving N MOS transistor 375A.The circuit of drivingcircuit 375A comprises a series connection lamination of PMOS transistor (beingtransistor 378A and 381A).This layout of the circuit of described drivingtransistors 372A and 375A has reduced the crow bar electric current bypredriver circuit 260A.
[0065] operation ofpredriver circuit 260A is as follows: if input signal has the signal (V of a logic highDD-VTN),transistor 363A turn-offs, andtransistor 366A and 369A then are conductings.The input signal of logic high also makes transistor 378A andtransistor 381A turn-off,transistor 384A conducting, thus the grid oftransistor 375A is pulled to the circuit earth potential.As a result,transistor 375A turn-offs,transistor 372A conducting, thus the signal of a logic high is provided tolevel translator 263A.
[0066] opposite, if input signal has the signal (V of a logic lowTP),transistor 363A conducting so, andtransistor 366A and 369A turn-off.Thereby described logic low input signal also makestransistor 378A and 381A conducting that the grid oftransistor 375A is drawn high, andtransistor 384A is turn-offed.As a result,transistor 375B turn-offs, andtransistor 375A also turn-offs, thereby the signal of a logic low is provided tolevel translator 263A.
[0067]predriver circuit 260B comprisestransistor 363B-384B, and itself andpredriver circuit 260A layout are similar.Level translator 263B comprisestransistor 295B and 298B.The operation ofpredriver circuit 260B andlevel translator 263B is similar withpredriver 260A andlevel translator 263A respectively.According to simulation result, in one embodiment,circuit arrangement 280 can be saved 35% energy than classic method.
[0068] Figure 12 shows acircuit arrangement 400 that is used in according to the illustrative embodiment of interconnection circuit of the present invention, and it comprises low energy-consumption driver and interlockcircuit.Circuit arrangement 400 comprisesdrive circuit 203 and acceptor circuit 205.Drive circuit 203 comprisespredriver circuit 260A and level translator263A.Acceptor circuit 205 comprisespredriver circuit 260B and level translator263B.Predriver circuit 260A has identical topological structure and operation in the same manner with 260B.Equally,level translator 263A and 263B have similar topological structure and operation similarly.
[0069] predrivercircuit 260A comprisestransistor 403A, 406A, 409A, 412A, 415A and418A.Transistor 403A and 418A provide a feedback mechanism for drive circuit 203.The PMOS lamination of a series connection is formed intransistor 406A and 409A coupling.On the contrary,transistor 412A and 415A are coupled and form a series connection NMOS lamination.Input signal and PMOS lamination (being the grid oftransistor 406A and 409A) and NMOS lamination (being the grid oftransistor 412A and 415A) coupling, and drive them.
[0070] comprise that indrive circuit 203 PMOS and NMOS lamination andfeedback transistor 403A and 418A have reduced the crow bar electric current ofpredriver 260A, similar to related circuit described in Figure 11.But different with the circuit among Figure 11 is thatcircuit arrangement 400 is to utilize feedback (bytransistor 403A and 418A) to realize this function.And these PMOS and NMOS lamination reduce or are tending towards reducing static leakage currents.As a result, the energy loss-rate traditional circuit ofcircuit arrangement 400 is little.
[0071] operation ofpredriver circuit 260A is as follows: suppose that the output signal (being node 425) ofpredriver circuit 260A has the value (V of a logic lowTP), and input signal changes the value of a logic low into.As a result,transistor 406A and 409A conducting, andtransistor 412A and 415A turn-off.Thereby PMOS lamination (transistor 406A and 409A) is drawn high the voltage (V of node 421DD-VTN).
[0072] owing to there is this ultramagnifier, when input made it be transformed into low signal,transistor 403A almost completely turn-offed.Same owing to have this ultramagnifier, almost completely conducting of transistor 418A.Opposite result will appear for opposite input value, as benefit from instructions of the present invention those of ordinary skills understood.
[0073]predriver circuit 260B comprisestransistor 403B, 406B, 409B, 412B, 415B and418B.Level translator 263B comprisestransistor 295B and 298B.The operation ofpredriver circuit 260B andlevel translator 263B is similar withpredriver 260A andlevel translator 263A respectively.According to simulation result, in one embodiment,circuit arrangement 280 can be saved 42% energy than classic method.
[0074] Figure 13 shows one and is used in according to the circuit arrangement in the illustrative embodiment of interconnection circuit of thepresent invention 430, and it comprises low energy-consumption driver and interlockcircuit.Circuit arrangement 430 comprisesdrive circuit 203 and acceptor circuit 205.Drive circuit 203 comprisespredriver circuit 260A and level translator263A.Acceptor circuit 205 comprisespredriver circuit 260B and level translator263B.Predriver circuit 260A and 260B have similar topological structure and operation in the same manner.Equally,level translator 263A and 263B have similar topological structure and operation similarly.
[0075] predrivercircuit 260A comprisesPMOS transistor 433A and nmos passtransistor 436A.Transistor 433A and 436A are coupled and form a transverter, as known to a person of ordinary skill in the art.But different with common transverter,transistor 433A has relative higher threshold voltage (V with 436AT), be called as superelevation V sometimesT(SHVT) transistor.For example,transistor 433A or 436A can have a threshold voltage that departs from the nominal threshold voltage 80mV of described specific fabrication process.
[0076] utilizetransistor 433A and 436A (it has relative higher threshold voltage) to reducepredriver circuit 260A crow bar electric current.More specifically, suppose that input has the value (V of a logic highDD-VTN).Having the common PMOS transistor of nominal threshold voltage may conducting and conduct some electric currents, thereby produces higher relatively crow bar electric current.
[0077] if this input has the value (VTP) of a logic low, the common nmos pass transistor with nominal threshold voltage may conducting, the finite value electric current that causes the crow bar electric current to raise occurs.But, utilize to have higher absolute threshold voltage (for example SHVT)transistor 433A and 436A, can avoid these situations.In other words, the relative higher threshold voltage oftransistor 433A stops its conducting when logic low value is imported.On the contrary, the relative higher threshold voltage oftransistor 433B stops its conducting when input signal has the value of logic high.
[0078]level translator 263A comprisestransistor 295A and298A.Transistor 295A and 298A have relatively low threshold voltage, are sometimes referred to as low threshold voltage (LVT).For example,transistor 295A or 298A can have the threshold voltage of the nominal threshold voltage-80mV that departs from specific fabrication process.The relatively low threshold voltage oftransistor 295A and 298A has guaranteed the reliability of level translator 263 and the operation of enhancing.
[0079] more specifically, have thetransistor 295A of relatively low threshold voltage (LVT) and 298A and cause the amplitude output signal that reduces, i.e. VDD-VTN (LVT)Logic be high level and VGND+ VTP (LVT)Logic be low level, wherein VTN (LVT)And VTP (LVT)Represent relatively low threshold voltage (LVT).Because predriver electric current 260B utilizestransistor 433B and the 436B with higher absolute threshold voltage (SHVT), the level of used logic high and the level of logic low have been guaranteed the transistor complete " shutoff " among thepredriver circuit 260B.
[0080] that is to say, described circuit relies on the poor of transistorized threshold voltage in transistor ANDgate acceptor circuit 205 first order indrive circuit 203 second level, guarantees normal running and (perhaps having less relatively) static static leakage currents do not occur.In addition, relatively low threshold voltage causes the current driving ability oftransistor 295A and 298A (and, similarly,transistor 295B and 298B) to increase, and then causes their operating speed to increase.
[0081]predriver circuit 260B comprisesPMOS transistor 433B and nmos passtransistor 436B.Transistor 433B and 436B have respectively andtransistor 433A and the similar characteristic of436A.Level translator 263B comprisestransistor 295B and298B.Predriver circuit 260B andlevel translator 263B operate similarly withpredriver circuit 260A andlevel translator263A respectively.Transistor 295B and 298B have respectively andtransistor 295A and the similar characteristic of 298A.According to simulation result, in one embodiment,circuit arrangement 430 can be saved 42% energy than classic method.
[0082] notes, as benefit from the understood by one of ordinary skill in the art of instructions of the present invention, people can be applied to the foregoing invention principle in the various programmable integrated circuits (IC) as required effectively, and wherein said programmable integrated circuit comprises logical circuit able to programme or configurable (they also are called as other titles in the art).For example, this type of circuit has comprised the device that is called as CPLD (CPLD), programmable gate array (PGA), structuring application specific IC (structured ASIC) and field programmable gate array (FPGA).
[0083] with reference to accompanying drawing, those of ordinary skills it should be noted that shown various modules can have been described principle function and signal flow substantially.Actual circuit embodiment can comprise also can not comprise the independence of described various functional modules or the discernible hardware of separation, and can use the particular electrical circuit shown in also can not utilizing.For example, people can be incorporated in the function of various modules in the circuit module as required.And people can utilize several circuit modules to realize the function of individual module as required.Various factors is depended in the selection of circuit embodiment, for example be used for the particular design and the specification of given embodiment, as benefit from instructions of the present invention those of ordinary skills understood.For benefiting from those of ordinary skills of instructions of the present invention, except embodiment as herein described, other modification of the present invention and alternate embodiment are tangible.Therefore, this instructions has been introduced to those skilled in the art and has been implemented mode of the present invention, should be regarded as merely illustrative.
[0084] should be considered to current preferred or illustrative embodiment with described form of the present invention shown in.Under the situation that does not break away from scope of invention described herein, those skilled in the art can make various modifications to its shape, size and each several part layout etc.For example, those skilled in the art can replace element shown and described herein with equivalent element.And the those skilled in the art that benefit from instructions of the present invention can be independent of the use of further feature without departing from the present invention when using some feature of the present invention.