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CN1562730A - Method for adjusting and controlling configuration of self-assembling block copolymer template oriented to nano micro machining - Google Patents

Method for adjusting and controlling configuration of self-assembling block copolymer template oriented to nano micro machining
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CN1562730A
CN1562730ACN 200410013641CN200410013641ACN1562730ACN 1562730 ACN1562730 ACN 1562730ACN 200410013641CN200410013641CN 200410013641CN 200410013641 ACN200410013641 ACN 200410013641ACN 1562730 ACN1562730 ACN 1562730A
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block copolymer
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王铀
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Harbin Institute of Technology Shenzhen
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面向纳米微加工嵌段共聚物模板自组装形态调控方法,它涉及一种在纳米微加工时所需要的模板图案的调控方法。目前能调控嵌段共聚物形态的处理方法具有调控能力有限、处理工艺比较复杂、所需时间很长的缺点。本发明的操作方法为:将嵌段共聚物溶解在二甲苯溶剂中配制成溶液,将溶液浇铸在基片表面自然挥发成膜,然后将基片放置于密闭容器内,再向密闭容器内滴加有机溶剂后密封,取出即为模板。本发明具有调控出来模板的形态多样性、调控过程高度可控、模板形态高度有序、调控不需复杂设备,工艺简单,成本低,效率高、能在基片上得到几百纳米尺度的各种图案等诸多优点,用本发明的方法还可以得到类似于圆锥齿轮形状的自组装模板图案。

Figure 200410013641

The invention relates to a method for regulating the self-assembly morphology of a nano-microprocessing block copolymer template, which relates to a method for regulating template patterns required in nano-microprocessing. The current treatment methods that can control the morphology of block copolymers have the disadvantages of limited control ability, complicated treatment process, and long time required. The operation method of the present invention is: dissolving the block copolymer in xylene solvent to prepare a solution, casting the solution on the surface of the substrate to volatilize naturally to form a film, then placing the substrate in an airtight container, and then dripping After adding an organic solvent, it is sealed and taken out as a template. The invention has the morphological diversity of the regulated templates, highly controllable regulated process, highly orderly morphological templates, no complex equipment for regulation, simple process, low cost, high efficiency, and can obtain various hundreds of nanometer scales on the substrate. Patterns and many other advantages, the method of the present invention can also be used to obtain self-assembled template patterns similar to the shape of bevel gears.

Figure 200410013641

Description

Towards the little processing block copolymer template of nanometer self assembly morphology control method
Technical field: the present invention relates to a kind of at the little regulate and control method that adds needed die plate pattern in man-hour of nanometer.
Background technology: at present, preparation processing nanostructured has three kinds of different approach: a kind of is with macroscopical block material, by removing unnecessary part, be processed into nanostructured, usually be referred to as method from up to down, belong to traditional Micrometer-Nanometer Processing Technology, comprise photoetching technique and molecular beam epitaxy technique; Another kind is that the urstoff of microsystem is assembled into nano-device, is referred to as bottom-up method usually, belongs to the Micrometer-Nanometer Processing Technology of rising, and comprises manipulation mounting technology, molecular template technology and the chemical synthesising technology of scan-probe.More than two kinds of nanoprocessings all exist one can't evade the question: promptly when material comprised nanostructured, its construction unit quantity was surprising.If continue to use traditional processing mode structure is one by one processed,, go to consider then unworkable at all from required time and cost angle even feasible on the technology.No wonder the someone sighs with feeling: nano material is scientist's a dream, engineer's nightmare.The third approach be first kind with second method " self assembly " technology that combines.So-called self assembly is a kind of process that forms the supramolecular structure or the sight superstructure that is situated between under the foeign element condition of not having.The self assembly manufacture process is green, eco-friendly, and efficient is high.Because above plurality of advantages also comes from the needs that nanosecond science and technology develop, biogenic self-assembling technique has caused that in recent years scientist pays much attention to and become the most popular research field rapidly.1996, people such as Whitesides (being published in Science) at first utilized the ion etching technology that the spherical microcell pattern of block copolymer is copied to the thick SiN of 50nm2On the mould material, obtain every square centimeter and have 1011The SiN of individual micropore2The membrane material (see figure 1) indicates and utilizes block copolymer self assembly mould plate technique to carry out the beginning of the little New Machining Technology technology of nanometer.
As for the processing method, new Opportunity coexists with challenge for self-assembling technique: be how to utilize the self assembly template to prepare corresponding construction nano material (duplicating of die plate pattern) on the one hand; On the other hand be how artificial adjustment self assembly die plate pattern is wished the nanostructured (regulation and control of die plate pattern) of structure with regulation and control.Pattern duplicate known can the realization (ion, ozone, remove to ultraviolet selecting part material) by lithographic technique.The control technique of die plate pattern is at present also in urgent need to be improved, because it is the key of template nanofabrication technique: have only the template of regulating and control out required pattern just might copy desirable structure.The processing method that can regulate and control the block copolymer form at present mainly contains: three kinds of methods such as The high temperature anneal, extra electric field processing, shear treatment.Wherein shear treatment is not suitable for the morphology control that relates to template applications owing to handling thickness of sample requirement is arranged.Remaining two kinds of methods are limited in one's ability for morphology control on the one hand, and the orderly form that regulation and control obtain is unique, let alone carries out the small template to regulate of hundreds of nanometer; Treatment process more complicated on the other hand, required time is very long.
Summary of the invention: the object of the present invention is to provide a kind of simple, efficiently towards the little processing block copolymer template of nanometer self assembly morphology control method, concrete operation method is: block copolymer is dissolved in the solution that is mixed with 0.1~1wt% concentration in the xylene solvent, cast under the room temperature condition on the smooth substrate surface of atomic level level, naturally the volatilization film forming, this cast membrane and the substrate that adheres to are positioned in the closed container, be lined with material in the closed container with adsorption solvent steam ability, at room temperature behind good solvent that drips block copolymer material on the material with adsorption solvent steam ability of closed container bottom or selective solvent, build the lid sealing then rapidly, the dripping quantity of organic solvent reaches capacity vapor pressure solvent for being enough to, and takes out after 1 hour~7 days to be towards the little processing block copolymer template of nanometer.Freely regulating and control of template form is to realize carrying out micro-machined prerequisite of nanometer and basis by people's wish, the present invention has enriched the control technique of block copolymer nano template, compare with existing control technique, it has following advantage: 1. it has the diversity of regulation and control parameter: the present invention can use dissimilar organic solvents at different needs; Change vapor pressure solvent by regulating and controlling temperature; In addition, solvent also can produce different effects with the different of template time of contact, thereby affects the regulation and control result of template.In a word, the diversity of regulation and control parameter is determining the come out form of template of regulation and control to have diversity; 2. the regulation process height is controlled; 3. regulate and control template form high-sequential; 4. regulation and control do not need complex device, and technology is simple, and cost is low, the efficient height; 5. solvent vapo(u)r also has the function of etching in regulation and control, can obtain the various patterns of hundreds of nanoscale on substrate, and this point is significant for the process technology of following nanometer part; 6. by local etching and regulation and control, can also obtain being similar to the self assembly die plate pattern (see figure 6) of conical gear shape with method of the present invention, this means and utilize this class template can process the nanogears (see figure 7) in the future.
Description of drawings: Fig. 1 utilizes the ion etching technology that the spherical microcell pattern of block copolymer SBS is copied to the thick SiN of 50nm2On the mould material, obtain every square centimeter and have 1011The SiN of individual micropore2The structural representation of membrane material, (size 800 * 800nm) is that AFM (AFM) is dissolved in the aspect graph that dimethylbenzene casts in the film forming of volatilizing naturally on the substrate afterwards about SEBS or SBS block copolymer to Fig. 2, Fig. 3 is the AFM aspect graph (size 800 * 800nm) with the specific embodiment three methods regulation and control gained template, Fig. 4 is the AFM aspect graph (size 800 * 800nm) with specific embodiment four directions method regulation and control gained template, Fig. 5 is the AFM aspect graph (size 500 * 500nm) with the specific embodiment five methods regulation and control gained template, Fig. 6 holds concurrently with the regulation and control of the specific embodiment six methods that (size 800 * 800nm), Fig. 7 is the schematic diagram that can be processed micro parts by Fig. 6 template for the microsize template AFM aspect graph of etching.
The specific embodiment one: block copolymer self assembly template generally needs the solvent cast preparation, and the thickness of template need be controlled in the nanoscale.We find THICKNESS CONTROL in 100 nanometers at room temperature, to utilize organic good solvent or selective solvent to fumigate with interior block copolymer film, can comprehensively regulate and control the self assembly pattern of template.Block copolymer is dissolved in the solution that is mixed with 0.1~1wt% concentration in the xylene solvent, cast under the room temperature condition on the smooth substrate surface of atomic level level, naturally the volatilization film forming, this cast membrane and the substrate that adheres to are positioned in the closed container, be lined with material in the closed container with adsorption solvent steam ability, at room temperature behind good solvent that drips block copolymer material on the material with adsorption solvent steam ability of closed container bottom or selective solvent, build the lid sealing then rapidly, the dripping quantity of organic solvent reaches capacity vapor pressure solvent for being enough to, and takes out after 1 hour~7 days to be towards the little processing block copolymer template of nanometer.Abundant, the high-sequential of Tiao Kong die plate pattern form in this way.
The specific embodiment two: the regulate and control method of present embodiment template is: polystyrene-saturated polybutadiene-polystyrene (SEBS) block copolymer is dissolved in the solution that is mixed with 0.1wt% concentration in the xylene solvent, cast in the film forming of volatilizing naturally on the mica sheet under the 20-30 ℃ of condition, the thickness of film preferably is less than 100 nanometers, the template form as shown in Figure 2, this cast membrane and the mica sheet that adheres to are positioned in the culture dish that is lined with filter paper constant temperature at 25 ℃, drip good solvent toluene on the filter paper of culture dish bottom, build lid rapidly, the dripping quantity of toluene reaches capacity vapor pressure solvent for being enough to, after 3 hours products obtained therefrom is taken out, regulation and control rear pattern plate form as shown in Figure 3.And then by the water surface block copolymer film (being template) is transferred to and to be wanted the replica material surface to carry out replica.
The specific embodiment three: the regulate and control method of present embodiment template is: polystyrene-poly butadiene-polystyrene (SBS) triblock copolymer is dissolved in the solution that is mixed with 1wt% concentration in the xylene solvent, monocrystalline silicon piece is positioned in the culture dish that is lined with continuous flower, room temperature condition drips dimethylbenzene down and takes in the silk floss of culture dish bottom, to be enough to make the dimethylbenzene of the vapor pressure solvent amount of reaching capacity to cast on the monocrystalline silicon piece then, build lid rapidly, after 10 hours the product taking-up is promptly got template, regulation and control rear pattern plate form can be transferred to block copolymer template by the water surface then and want the replica material surface to carry out replica to get final product as shown in Figure 3.
The specific embodiment four: the regulate and control method of present embodiment template is: the SEBS block copolymer that U.S. Shell company is produced is dissolved in the solution that is mixed with 0.5wt% concentration in the xylene solvent, cast in the film forming of volatilizing naturally on the mica sheet under the 20-30 ℃ of condition, the thickness of film is 20 nanometers, the template form as shown in Figure 2, this cast membrane and the mica sheet that adheres to are positioned in the culture dish that is lined with filter paper constant temperature at 25 ℃, to be enough to make the selective solvent heptane droplets of the vapor pressure solvent amount of reaching capacity to be added on the filter paper of culture dish bottom then, build lid rapidly, after 1 hour the product taking-up is promptly got rear pattern plate, gained template form can be transferred to block copolymer film (being the gained template) by the water surface then and want the replica material surface to carry out replica to get final product as shown in Figure 4.
The specific embodiment five: the regulate and control method of present embodiment template is: the SBS triblock copolymer that U.S. Shell company is produced is dissolved in the solution that is mixed with 0.2wt% concentration in the xylene solvent, cast in the film forming of volatilizing naturally on the monocrystalline silicon piece under the room temperature condition, the thickness of gained film is 40 nanometers, the template form as shown in Figure 2, this cast membrane and the monocrystalline silicon piece that adheres to are positioned in the culture dish that is lined with filter paper constant temperature at 25 ℃, dropping is enough to make the cyclohexane of the vapor pressure solvent amount of reaching capacity on the filter paper of culture dish bottom, build lid rapidly, after 24 hours the product taking-up is promptly got rear pattern plate, gained template form can be transferred to block copolymer film (promptly using the inventive method gained template) by the water surface then and want the replica material surface to carry out replica to get final product as shown in Figure 5.
The specific embodiment six: the regulate and control method of present embodiment template is: polystyrene-saturated polybutadiene-polystyrene block copolymer is dissolved in the solution that is mixed with 0.8wt% concentration in the xylene solvent, cast in the film forming of volatilizing naturally on the mica sheet under the 20-30 ℃ of condition, the template form as shown in Figure 2, this cast membrane placement is had in the extraordinary measuring cup of ground airtight performance, sample is apart from measuring cup bottom 1cm, dropping is enough to make the dimethylbenzene of the vapor pressure solvent amount of reaching capacity to build lid rapidly in the measuring cup bottom, 25 ℃ of constant temperature after 7 days take out product and promptly get rear pattern plate, gained template form as shown in Figure 6, this moment, solvent vapo(u)r eroded most of block copolymer template, stay local minute sized die plate pattern, provide condition for utilizing this template to process micro-nano part.

Claims (7)

Translated fromChinese
1、一种面向纳米微加工嵌段共聚物模板自组装形态调控方法,其特征在于将嵌段共聚物溶解在二甲苯溶剂中配制成0.1~1wt%浓度的溶液,室温条件下浇铸在原子水平级平整的基片表面上,自然挥发成膜,将此浇铸膜与附着的基片放置于密闭容器内,密闭容器内垫有具有吸附溶剂蒸汽能力的材料,然后在室温下向密闭容器底部的具有吸附溶剂蒸汽能力的材料上滴加嵌段共聚物材料的良溶剂或选择性溶剂后迅速盖好盖子密封,有机溶剂的滴加量为足以使溶剂蒸汽压达到饱和,1小时~7天后取出即为面向纳米微加工嵌段共聚物模板。1. A method for regulating self-assembly morphology of block copolymer templates for nano-microprocessing, characterized in that the block copolymer is dissolved in xylene solvent to prepare a solution with a concentration of 0.1 to 1 wt%, and cast at the atomic level at room temperature On the level flat substrate surface, it will naturally volatilize to form a film. Place the cast film and the attached substrate in a closed container. The closed container is filled with a material capable of absorbing solvent vapor, and then pour it to the bottom of the closed container at room temperature. Add the good solvent or selective solvent of the block copolymer material to the material with the ability to absorb solvent vapor, and then quickly cover and seal it. The amount of organic solvent added is enough to saturate the solvent vapor pressure, and take it out after 1 hour to 7 days. That is, it is a block copolymer template for nano-microprocessing.2、根据权利要求1所述的面向纳米微加工嵌段共聚物模板自组装形态调控方法,其特征在于所述嵌段共聚物为聚苯乙烯—饱和聚丁二烯—聚苯乙烯嵌段共聚物或聚苯乙烯—聚丁二烯—聚苯乙烯嵌段共聚物。2. The method for regulating the self-assembly morphology of nano-microprocessed block copolymer templates according to claim 1, wherein the block copolymer is polystyrene-saturated polybutadiene-polystyrene block copolymerization or polystyrene-polybutadiene-polystyrene block copolymers.3根据权利要求1或2所述的面向纳米微加工嵌段共聚物模板自组装形态调控方法,其特征在于二甲笨溶液浇涛于基片上挥发成膜的厚度小于100纳米。3. According to claim 1 or 2, the nano-microprocessing-oriented block copolymer template self-assembly morphology control method is characterized in that the thickness of the xylene solution poured on the substrate and volatilized to form a film is less than 100 nanometers.4、根据权利要求1或2所述的面向纳米微加工嵌段共聚物模板自组装形态调控方法,其特征在于所述原子水平级平整的基片为云母片或单晶硅。4. The method for regulating self-assembly morphology of nano-micro-processing block copolymer templates according to claim 1 or 2, characterized in that the atomically flat substrate is a mica sheet or a single crystal silicon.5、根据权利要求1或2所述的面向纳米微加工嵌段共聚物模板自组装形态调控方法,其特征在于所述密闭容器为培养皿或称量瓶。5. The method for regulating the self-assembly morphology of nano-microprocessing block copolymer templates according to claim 1 or 2, characterized in that the airtight container is a petri dish or a weighing bottle.6、根据权利要求1或2所述的面向纳米微加工嵌段共聚物模板自组装形态调控方法,其特征在于所述具有吸附溶剂蒸汽能力的材料为滤纸或绵花。6. The method for regulating the self-assembly morphology of nano-microprocessed block copolymer templates according to claim 1 or 2, characterized in that the material capable of absorbing solvent vapor is filter paper or cotton.7、根据权利要求1或2所述的面向纳米微加工嵌段共聚物模板自组装形态调控方法,其特征在于良溶剂为甲苯或二甲苯,选择性溶剂为环乙烷或庚烷。7. The method for regulating the self-assembly morphology of nano-microprocessed block copolymer templates according to claim 1 or 2, characterized in that the good solvent is toluene or xylene, and the selective solvent is cycloethane or heptane.
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Cited By (26)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US8080615B2 (en)2007-06-192011-12-20Micron Technology, Inc.Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide
US8083953B2 (en)2007-03-062011-12-27Micron Technology, Inc.Registered structure formation via the application of directed thermal energy to diblock copolymer films
US8101261B2 (en)2008-02-132012-01-24Micron Technology, Inc.One-dimensional arrays of block copolymer cylinders and applications thereof
US8114300B2 (en)2008-04-212012-02-14Micron Technology, Inc.Multi-layer method for formation of registered arrays of cylindrical pores in polymer films
US8114301B2 (en)2008-05-022012-02-14Micron Technology, Inc.Graphoepitaxial self-assembly of arrays of downward facing half-cylinders
CN101405216B (en)*2006-03-232012-05-09美光科技公司Topography directed patterning
US8283258B2 (en)2007-08-162012-10-09Micron Technology, Inc.Selective wet etching of hafnium aluminum oxide films
US8372295B2 (en)2007-04-202013-02-12Micron Technology, Inc.Extensions of self-assembled structures to increased dimensions via a “bootstrap” self-templating method
US8394483B2 (en)2007-01-242013-03-12Micron Technology, Inc.Two-dimensional arrays of holes with sub-lithographic diameters formed by block copolymer self-assembly
US8404124B2 (en)2007-06-122013-03-26Micron Technology, Inc.Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces
US8425982B2 (en)2008-03-212013-04-23Micron Technology, Inc.Methods of improving long range order in self-assembly of block copolymer films with ionic liquids
US8426313B2 (en)2008-03-212013-04-23Micron Technology, Inc.Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference
US8450418B2 (en)2010-08-202013-05-28Micron Technology, Inc.Methods of forming block copolymers, and block copolymer compositions
US8551808B2 (en)2007-06-212013-10-08Micron Technology, Inc.Methods of patterning a substrate including multilayer antireflection coatings
US8557128B2 (en)2007-03-222013-10-15Micron Technology, Inc.Sub-10 nm line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers
US8669645B2 (en)2008-10-282014-03-11Micron Technology, Inc.Semiconductor structures including polymer material permeated with metal oxide
US8900963B2 (en)2011-11-022014-12-02Micron Technology, Inc.Methods of forming semiconductor device structures, and related structures
US8956713B2 (en)2007-04-182015-02-17Micron Technology, Inc.Methods of forming a stamp and a stamp
US8999492B2 (en)2008-02-052015-04-07Micron Technology, Inc.Method to produce nanometer-sized features with directed assembly of block copolymers
US9087699B2 (en)2012-10-052015-07-21Micron Technology, Inc.Methods of forming an array of openings in a substrate, and related methods of forming a semiconductor device structure
US9177795B2 (en)2013-09-272015-11-03Micron Technology, Inc.Methods of forming nanostructures including metal oxides
US9229328B2 (en)2013-05-022016-01-05Micron Technology, Inc.Methods of forming semiconductor device structures, and related semiconductor device structures
CN105384952A (en)*2015-09-152016-03-09北京航空航天大学Method for adjusting and controlling block copolymer self-assembled orientation by using mechanical shearing force
CN105713189A (en)*2016-02-162016-06-29浙江大学Block copolymer and method and application for forming microphase separation perpendicular phase domain structure
CN106222752A (en)*2016-08-292016-12-14上海理工大学A kind of method preparing organic crystal thin film
CN111303478A (en)*2020-04-222020-06-19北京航空航天大学Naked eye 3D display screen material and preparation method thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US6541539B1 (en)*1998-11-042003-04-01President And Fellows Of Harvard CollegeHierarchically ordered porous oxides
WO2002031002A1 (en)*2000-10-112002-04-18Uab Research FoundationNanostructures formed through cyclohexadiene polymerization
WO2002055185A2 (en)*2000-10-192002-07-18Eidgenoess Tech HochschuleBlock copolymers for multifunctional self-assembled systems
EP1397243B1 (en)*2001-04-132011-08-31Cornell Research Foundation, Inc.Superparamagnetic nanostructured materials
JP4280813B2 (en)*2001-11-192009-06-17独立行政法人産業技術総合研究所 Non-silica mesostructure and method for producing the same
CN1425706A (en)*2003-01-142003-06-25天津大学Polyglycol block modified polyhexanolactone and its preparing method

Cited By (60)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
CN101405216B (en)*2006-03-232012-05-09美光科技公司Topography directed patterning
US8394483B2 (en)2007-01-242013-03-12Micron Technology, Inc.Two-dimensional arrays of holes with sub-lithographic diameters formed by block copolymer self-assembly
US8512846B2 (en)2007-01-242013-08-20Micron Technology, Inc.Two-dimensional arrays of holes with sub-lithographic diameters formed by block copolymer self-assembly
CN101588988B (en)*2007-01-242013-07-31美光科技公司 Two-dimensional arrays of holes with sublithographic diameters formed by self-assembled block copolymers
US8083953B2 (en)2007-03-062011-12-27Micron Technology, Inc.Registered structure formation via the application of directed thermal energy to diblock copolymer films
US8753738B2 (en)2007-03-062014-06-17Micron Technology, Inc.Registered structure formation via the application of directed thermal energy to diblock copolymer films
US8409449B2 (en)2007-03-062013-04-02Micron Technology, Inc.Registered structure formation via the application of directed thermal energy to diblock copolymer films
US8784974B2 (en)2007-03-222014-07-22Micron Technology, Inc.Sub-10 NM line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers
US8801894B2 (en)2007-03-222014-08-12Micron Technology, Inc.Sub-10 NM line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers
US8557128B2 (en)2007-03-222013-10-15Micron Technology, Inc.Sub-10 nm line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers
US9768021B2 (en)2007-04-182017-09-19Micron Technology, Inc.Methods of forming semiconductor device structures including metal oxide structures
US8956713B2 (en)2007-04-182015-02-17Micron Technology, Inc.Methods of forming a stamp and a stamp
US9276059B2 (en)2007-04-182016-03-01Micron Technology, Inc.Semiconductor device structures including metal oxide structures
US8372295B2 (en)2007-04-202013-02-12Micron Technology, Inc.Extensions of self-assembled structures to increased dimensions via a “bootstrap” self-templating method
US9142420B2 (en)2007-04-202015-09-22Micron Technology, Inc.Extensions of self-assembled structures to increased dimensions via a “bootstrap” self-templating method
US8404124B2 (en)2007-06-122013-03-26Micron Technology, Inc.Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces
US9257256B2 (en)2007-06-122016-02-09Micron Technology, Inc.Templates including self-assembled block copolymer films
US8609221B2 (en)2007-06-122013-12-17Micron Technology, Inc.Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces
US8513359B2 (en)2007-06-192013-08-20Micron Technology, Inc.Crosslinkable graft polymer non preferentially wetted by polystyrene and polyethylene oxide
US8080615B2 (en)2007-06-192011-12-20Micron Technology, Inc.Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide
US8445592B2 (en)2007-06-192013-05-21Micron Technology, Inc.Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide
US8785559B2 (en)2007-06-192014-07-22Micron Technology, Inc.Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide
US8551808B2 (en)2007-06-212013-10-08Micron Technology, Inc.Methods of patterning a substrate including multilayer antireflection coatings
US8283258B2 (en)2007-08-162012-10-09Micron Technology, Inc.Selective wet etching of hafnium aluminum oxide films
US8618000B2 (en)2007-08-162013-12-31Micron Technology, Inc.Selective wet etching of hafnium aluminum oxide films
US10828924B2 (en)2008-02-052020-11-10Micron Technology, Inc.Methods of forming a self-assembled block copolymer material
US11560009B2 (en)2008-02-052023-01-24Micron Technology, Inc.Stamps including a self-assembled block copolymer material, and related methods
US10005308B2 (en)2008-02-052018-06-26Micron Technology, Inc.Stamps and methods of forming a pattern on a substrate
US8999492B2 (en)2008-02-052015-04-07Micron Technology, Inc.Method to produce nanometer-sized features with directed assembly of block copolymers
US8101261B2 (en)2008-02-132012-01-24Micron Technology, Inc.One-dimensional arrays of block copolymer cylinders and applications thereof
US8642157B2 (en)2008-02-132014-02-04Micron Technology, Inc.One-dimensional arrays of block copolymer cylinders and applications thereof
US8633112B2 (en)2008-03-212014-01-21Micron Technology, Inc.Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference
US8425982B2 (en)2008-03-212013-04-23Micron Technology, Inc.Methods of improving long range order in self-assembly of block copolymer films with ionic liquids
US11282741B2 (en)2008-03-212022-03-22Micron Technology, Inc.Methods of forming a semiconductor device using block copolymer materials
US9682857B2 (en)2008-03-212017-06-20Micron Technology, Inc.Methods of improving long range order in self-assembly of block copolymer films with ionic liquids and materials produced therefrom
US8426313B2 (en)2008-03-212013-04-23Micron Technology, Inc.Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference
US9315609B2 (en)2008-03-212016-04-19Micron Technology, Inc.Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference
US8641914B2 (en)2008-03-212014-02-04Micron Technology, Inc.Methods of improving long range order in self-assembly of block copolymer films with ionic liquids
US10153200B2 (en)2008-03-212018-12-11Micron Technology, Inc.Methods of forming a nanostructured polymer material including block copolymer materials
US8455082B2 (en)2008-04-212013-06-04Micron Technology, Inc.Polymer materials for formation of registered arrays of cylindrical pores
US8114300B2 (en)2008-04-212012-02-14Micron Technology, Inc.Multi-layer method for formation of registered arrays of cylindrical pores in polymer films
US8114301B2 (en)2008-05-022012-02-14Micron Technology, Inc.Graphoepitaxial self-assembly of arrays of downward facing half-cylinders
US8518275B2 (en)2008-05-022013-08-27Micron Technology, Inc.Graphoepitaxial self-assembly of arrays of downward facing half-cylinders
US8993088B2 (en)2008-05-022015-03-31Micron Technology, Inc.Polymeric materials in self-assembled arrays and semiconductor structures comprising polymeric materials
US8669645B2 (en)2008-10-282014-03-11Micron Technology, Inc.Semiconductor structures including polymer material permeated with metal oxide
US8450418B2 (en)2010-08-202013-05-28Micron Technology, Inc.Methods of forming block copolymers, and block copolymer compositions
US9431605B2 (en)2011-11-022016-08-30Micron Technology, Inc.Methods of forming semiconductor device structures
US8900963B2 (en)2011-11-022014-12-02Micron Technology, Inc.Methods of forming semiconductor device structures, and related structures
US9087699B2 (en)2012-10-052015-07-21Micron Technology, Inc.Methods of forming an array of openings in a substrate, and related methods of forming a semiconductor device structure
US9229328B2 (en)2013-05-022016-01-05Micron Technology, Inc.Methods of forming semiconductor device structures, and related semiconductor device structures
US10049874B2 (en)2013-09-272018-08-14Micron Technology, Inc.Self-assembled nanostructures including metal oxides and semiconductor structures comprised thereof
US11532477B2 (en)2013-09-272022-12-20Micron Technology, Inc.Self-assembled nanostructures including metal oxides and semiconductor structures comprised thereof
US9177795B2 (en)2013-09-272015-11-03Micron Technology, Inc.Methods of forming nanostructures including metal oxides
US12400856B2 (en)2013-09-272025-08-26Micron Technology, Inc.Methods of forming nanostructures including metal oxides using block copolymer materials
CN105384952A (en)*2015-09-152016-03-09北京航空航天大学Method for adjusting and controlling block copolymer self-assembled orientation by using mechanical shearing force
CN105713189A (en)*2016-02-162016-06-29浙江大学Block copolymer and method and application for forming microphase separation perpendicular phase domain structure
CN106222752A (en)*2016-08-292016-12-14上海理工大学A kind of method preparing organic crystal thin film
CN106222752B (en)*2016-08-292019-02-15上海理工大学 A kind of method for preparing organic crystal thin film
CN111303478A (en)*2020-04-222020-06-19北京航空航天大学Naked eye 3D display screen material and preparation method thereof
CN111303478B (en)*2020-04-222021-06-08北京航空航天大学Naked eye 3D display screen material and preparation method thereof

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