CN1331310C - High power millimeter wave upper frequency converter power amplification assembly based on three branch combining network - Google Patents

Abstract

The present invention relates to an assembly of a high power millimeter wave up-conversion power amplifier, which is based on a three branch synthesis network. The assembly comprises a local oscillation frequency doubler, a local oscillator filter, a local oscillation amplifier, a mixer, a radio-frequency amplifier, a filter, a gain amplifier and a power drive amplifier, wherein secondary harmonic components are filtered out of signals of which the frequencies are doubled through the local oscillator filter, and the two frequency doubling signals which are filtered out are processed by up-conversion in the mixer through signals amplified by the local oscillation amplifier and input intermediate frequency signals. The radio-frequency amplifier amplifies up-conversion signals; after the filter is used for the radio-frequency amplifier, the filter carries out band-pass filtering for radio-frequency signals; the gain amplifier and the power drive amplifier are used for the filter and carry out pre-amplification for the radio-frequency signals; a final stage power synthesis amplifier arranged behind the power drive amplifier carries out high power amplification for the radio-frequency signals so as to output high power millimeter wave signals. The present invention realizes high power output of millimeter wave bands through using the three branch synthesis network and the technology of multi-chip power synthesis. The present invention has the advantages of high integration of circuits and good reliability.

Description

Translated fromChinese

基于三支线合成网络的高功率毫米波上变频功放组件High-power millimeter-wave up-conversion power amplifier component based on three-branch synthesis network

一技术领域a technical field

本发明涉及一种毫米波组件，特别是一种基于三支线合成网络的高功率毫米波上变频功放组件。The invention relates to a millimeter-wave component, in particular to a high-power millimeter-wave up-conversion power amplifier component based on a three-branch synthesis network.

二背景技术Two background technology

毫米波上变频组件是毫米波系统中的关键部件，可广泛用于毫米波通信、雷达以及遥测遥控等领域中。毫米波上变频组件在国内外已有相关的报道，如文献1：“毫米波倍频上变频功放组件”，半导体情报，2000.8。该组件是将输入信号(15GHz，10dBm)倍频至30GHz，与本振信号(5GHz，10dBm)上变频到35GHz，然后进行功率放大输出。其倍频部分采用GaAs PHEMT有源倍频并进行放大，混频电路采用GaAs二级管的双平衡混频，滤波放大后由8mm波导输出。最终结果为输出频率为35GHz输出功率为17dBm。文献2：“47GHz上变频组件的研制”，微波与卫星通信，1999年，该组件由鳍线结构的上变频器和注入锁定本根源组成，采用波导结构，要求本振功率60mW，输出功率为2mW。如文献中所述，现有毫米波上变频组件一般采用分立模块实现，集成化程度不高，而且具有高功率输出的毫米波上变频功放组件也未见相关的报道。Millimeter-wave up-conversion components are key components in millimeter-wave systems and can be widely used in millimeter-wave communications, radar, and telemetry and remote control. Millimeter-wave up-conversion components have been reported at home and abroad, such as Document 1: "Millimeter-wave frequency doubling up-conversion power amplifier components", Semiconductor Information, 2000.8. This component multiplies the input signal (15GHz, 10dBm) to 30GHz, upconverts the local oscillator signal (5GHz, 10dBm) to 35GHz, and then amplifies the output power. The frequency doubling part adopts GaAs PHEMT active frequency doubling and amplification, the frequency mixing circuit adopts double-balanced frequency mixing of GaAs diode, and the output is filtered and amplified by 8mm waveguide. The final result is an output power of 17dBm at an output frequency of 35GHz. Document 2: "Development of 47GHz up-conversion component", microwave and satellite communication, in 1999, the component consists of an up-converter with a fin-line structure and an injection-locked root source. It adopts a waveguide structure and requires a local oscillator power of 60mW and an output power of 2mW. As mentioned in the literature, the existing millimeter-wave up-conversion components are generally implemented by discrete modules, and the degree of integration is not high, and there are no related reports on millimeter-wave up-conversion power amplifier components with high power output.

三发明内容Three invention content

本发明的目的在于提供一种输出频率38～40GHz，输出功率大于2W，增益大于55dB的一体化毫米波高功率上变频功放组件。The purpose of the present invention is to provide an integrated millimeter-wave high-power up-conversion power amplifier assembly with an output frequency of 38-40 GHz, an output power greater than 2 W, and a gain greater than 55 dB.

实现本发明目的的技术解决方案为：一种基于三支线合成网络的高功率毫米波上变频功放组件，它包括本振倍频器、本振滤波器、本振放大器、混频器、射频放大器、滤波器、增益放大器、功率驱动放大器，本振倍频器用于本振输入端，对输入本振信号进行倍频；倍频后信号经过本振滤波器滤出二次谐波分量；滤出的二倍频信号经过本振放大器放大到混频器所需要的功率；本振放大后的信号与输入的中频信号在混频器中进行上变频；射频放大器对上变频信号进行放大，以更好地抑制带外杂散；滤波器用于射频放大器后对射频信号进行带通滤波，抑制带外杂散；增益放大器、功率驱动放大器用于滤波器后对射频信号进行预放大；其特征在于：功率驱动放大器后设置末级功率合成放大器对射频信号进行高功率放大，输出高功率毫米波信号。The technical solution for realizing the purpose of the present invention is: a high-power millimeter-wave up-conversion power amplifier assembly based on a three-branch synthesis network, which includes a local oscillator frequency multiplier, a local oscillator filter, a local oscillator amplifier, a mixer, and a radio frequency amplifier , filter, gain amplifier, power drive amplifier, the local oscillator frequency multiplier is used at the local oscillator input to perform frequency multiplication on the input local oscillator signal; after frequency multiplication, the signal passes through the local oscillator filter to filter out the second harmonic component; The double frequency signal is amplified by the local oscillator amplifier to the power required by the mixer; the amplified signal of the local oscillator and the input intermediate frequency signal are up-converted in the mixer; the RF amplifier amplifies the up-converted signal to more Good suppression of out-of-band spurs; the filter is used for band-pass filtering the radio frequency signal after the radio frequency amplifier to suppress the out-of-band spurs; the gain amplifier and the power drive amplifier are used for pre-amplification of the radio frequency signal after the filter; it is characterized in that: After the power drive amplifier, the final power synthesis amplifier is set to amplify the radio frequency signal with high power and output a high power millimeter wave signal.

本发明的一体化毫米波上变频组件主要完成输入中频信号(中心频率2.3GHz)到输出射频信号(频率38～40GHz，功率33dBm)的变频过程，输入本振信号频率18.15～18.65GHz。首先对输入本振信号进行倍频后，由于输出信号中包括不需要的多次谐波和基波分量，因此需要在倍频器输出端加一个带通滤波来得到二次谐波分量，此时得到的信号很小，还需要进行放大到混频器所需要的功率；倍频后的本振信号与输入中频信号进行混频，为了更好地抑制带外杂散，混频后先接一级高增益射频放大器，然后进行滤波，得到需要带宽内的信号；信号最后要经过高功率放大器进行功率放大后再发射，但是由于最后一级高功率放大器的增益一般都不大，尤其是在毫米波段，最后一级功率放大器的增益一般不超过10dB。所以在末级功放之前，加入功率增益以及驱动放大器，将射频信号进行预放大；预放大的信号最后通过三支线功率合成网络，由四个1W的毫米波芯片进行功率合成，最后输出2W的输出功率；在末级功率输出端还加入了毫米波检波器以检测模块的工作状态。The integrated millimeter-wave up-conversion component of the present invention mainly completes the frequency conversion process from inputting an intermediate frequency signal (center frequency 2.3GHz) to outputting a radio frequency signal (frequency 38-40GHz, power 33dBm), and inputting a local oscillator signal frequency 18.15-18.65GHz. First, after multiplying the frequency of the input local oscillator signal, since the output signal includes unnecessary multiple harmonics and fundamental components, it is necessary to add a band-pass filter at the output of the frequency multiplier to obtain the second harmonic component. When the signal obtained is very small, it needs to be amplified to the power required by the mixer; the local oscillator signal after frequency multiplication is mixed with the input intermediate frequency signal. In order to better suppress out-of-band spurs, it is first connected to A first-stage high-gain radio frequency amplifier is then filtered to obtain a signal within the required bandwidth; the signal must be amplified by a high-power amplifier before being transmitted, but the gain of the last-stage high-power amplifier is generally not large, especially in In the millimeter wave band, the gain of the last stage power amplifier generally does not exceed 10dB. Therefore, before the final power amplifier, add power gain and drive amplifier to pre-amplify the RF signal; the pre-amplified signal finally passes through the three-branch power synthesis network, and the power synthesis is performed by four 1W millimeter-wave chips, and finally outputs 2W output Power; a millimeter wave detector is also added to the final power output to detect the working status of the module.

在末级功率合成放大器的实现上，选用三支线定向耦合器来构成功率合成放大电路，采用多芯片功率合成技术以及MMIC功率芯片，即所述末级功率合成放大器采用多芯片功率合成，其包括第一、第二和第三功率分配器，第一、第二、第三和第四功率放大芯片，以及第一、第二和第三功率合成器，其中经预放大的射频信号进入第一功率分配器分成两路信号后分别进入第二和第三功率分配器，然后经第二和第三功率分配器输出的四路信号分别进入第一、第二、第三和第四功率放大芯片功率放大后，第一和第二功率放大芯片的输出由第一功率合成器功率合成输出第一合成射频信号，第三和第四功率放大芯片的输出由第二功率合成器合成输出第二合成射频信号，最后第一和第二合成射频信号输入第三功率合成器后输出最终的射频信号。由于合成单元的电路损耗以及两路信号合成时的相位不一致是影响合成效率的主要因素，对此我们采取以下三点措施来提高合成效率：选择介质损耗小的介质基片以减少合成网络的电路损耗；对选用的MMIC功放芯片按照插入相位进行筛选分类；对功率分配/合成网络进行优化。In the realization of the final power synthesis amplifier, three branch line directional couplers are selected to form the power synthesis amplifier circuit, and multi-chip power synthesis technology and MMIC power chip are used, that is, the final power synthesis amplifier adopts multi-chip power synthesis, which includes First, second and third power splitters, first, second, third and fourth power amplifying chips, and first, second and third power combiners, wherein the pre-amplified radio frequency signal enters the first The power divider is divided into two signals and enters the second and third power dividers respectively, and then the four signals output by the second and third power dividers enter the first, second, third and fourth power amplifier chips respectively After power amplification, the output of the first and second power amplifier chips is combined by the first power combiner to output the first combined radio frequency signal, and the output of the third and fourth power amplifier chips is combined by the second power combiner to output the second combined radio frequency signal. The radio frequency signal, finally the first and second combined radio frequency signals are input to the third power combiner to output the final radio frequency signal. Since the circuit loss of the synthesis unit and the phase inconsistency of the two-way signal synthesis are the main factors affecting the synthesis efficiency, we take the following three measures to improve the synthesis efficiency: choose a dielectric substrate with a small dielectric loss to reduce the circuit of the synthesis network Loss; filter and classify the selected MMIC power amplifier chips according to the insertion phase; optimize the power distribution/combination network.

在整个上变频组件的集成上，采取单片集成及多芯片组装(MCM)技术。利用多芯片组装(MCM)技术可实现微波毫米波模块的各个腔室。在各个腔室之间的信号传输都是用其内部导体来实现。这样的一个最大好处：一方面减小了体积，另一方面是对整体性能的一个提升。这种腔室结构对同种频率的微小型集成具有其优越性。可以有效地将系统中的放大器、混频器、功分器、功放分成若干个腔室，组成一个小型化的、立体结构的模块。在本组件中，上变频器，射频放大器、倍频器、本振放大器为实现小型化器件集成，均采用MMIC芯片来实现。In the integration of the entire up-conversion components, monolithic integration and multi-chip assembly (MCM) technologies are adopted. The individual chambers of the microwave and millimeter wave modules can be realized using multi-chip assembly (MCM) technology. The signal transmission between each chamber is realized by its internal conductor. One of the biggest benefits of this is: on the one hand, it reduces the size, and on the other hand, it improves the overall performance. This cavity structure has its advantages for micro-integration of the same frequency. The amplifier, mixer, power divider and power amplifier in the system can be effectively divided into several chambers to form a miniaturized and three-dimensional module. In this component, the up-converter, RF amplifier, frequency multiplier, and local oscillator amplifier are all realized by MMIC chips in order to realize miniaturized device integration.

本发明与现有技术相比，其显著优点是：1)在毫米波波段上采用了三支线合成网络，同时为了提高合成效率，实现电路的平面化、小型化，选择和实现了性能良好的功率分配/合成器。2)采用多芯片功率合成技术实现了高功率功率放大组件，实现了毫米波段的大功率输出；3)采用一体化毫米波上变频组件集成技术，对毫米波上变频组件组成部分上变频器、射频放大器、本振倍频器、本振放大器、滤波器、检波器等进行了电路制作，在保证各部件实现的同时，完成一体化的实现；4)采用多芯片组装(MCM)实现小型化、集成化的电路组成，既实现了集成化组件，同时保证了各功能部件的匹配以及高可靠性，提高了成品率。一体化毫米波高功率上变频器具有集成度高，超小型化，输出频段高，输出功率大的特点。Compared with the prior art, the present invention has the following remarkable advantages: 1) a three-branch synthesis network is used in the millimeter wave band, and at the same time, in order to improve the synthesis efficiency and realize the planarization and miniaturization of the circuit, a good performance is selected and realized. Power splitter/combiner. 2) The multi-chip power synthesis technology is used to realize high-power power amplification components, and the high-power output in the millimeter wave band is realized; 3) The integration technology of integrated millimeter-wave up-conversion components is adopted, and the up-converter, RF amplifiers, local oscillator frequency multipliers, local oscillator amplifiers, filters, detectors, etc. have been circuit-made, while ensuring the realization of each component, the integration is completed; 4) Multi-chip assembly (MCM) is used to achieve miniaturization , Integrated circuit composition, which not only realizes integrated components, but also ensures the matching and high reliability of each functional component, and improves the yield. The integrated millimeter-wave high-power upconverter has the characteristics of high integration, ultra-miniaturization, high output frequency band, and large output power.

四附图说明Four drawings

图1是本发明的基于三支线合成网络的高功率毫米波上变频功放组件的一体化三支线合成网络的毫米波高功率上变频组件构成框图。FIG. 1 is a block diagram of the millimeter-wave high-power up-conversion assembly of the integrated three-branch synthesis network of the high-power millimeter-wave up-conversion power amplifier assembly based on the three-branch synthesis network of the present invention.

图2是本发明的基于三支线合成网络的高功率毫米波上变频功放组件的应用毫米波三支线合成网络实现毫米波高功率合成放大器的构成框图。Fig. 2 is a block diagram of the high-power millimeter-wave up-conversion power amplifier assembly based on the three-branch synthesis network of the present invention, which uses the millimeter-wave three-branch synthesis network to realize the millimeter-wave high-power synthesis amplifier.

图3是本发明的基于三支线合成网络的高功率毫米波上变频功放组件的毫米波三支线合成网络电路版图。Fig. 3 is a circuit layout of the millimeter-wave three-branch synthesis network of the high-power millimeter-wave up-conversion power amplifier assembly based on the three-branch synthesis network of the present invention.

五具体实施方式Five specific implementation methods

结合图1，将一体化毫米波上变频组件组成单元本振倍频器、本振滤波器、本振放大器、混频器、射频放大器、滤波器、增益放大器、功率驱动放大器、末级功率合成放大器以及检波器进行连接。首先对本振输出信号进行倍频，倍频后由于输出信号中包括不需要的多次谐波和基波分量，因此需要在倍频器输出端加一个带通滤波来得到二次谐波分量，此时得到的信号较小，还需要进行放大，因此加一级本振放大器；然后将倍频后的本振信号与中频信号进行混频，为了更好地抑制带外杂散，混频后先接一级高增益射频放大器，然后进行滤波，得到需要带宽内的信号，信号一般都要经过高功率放大器进行功率放大后再发射，但是由于最后一级高功率放大器的增益一般都不大，尤其是在毫米波段，最后一级功率放大器的增益一般不超过10dB。所以在末级功放之前，还应当加入增益放大器与驱动放大器，将射频信号进行预放大；最后按图2功率合成放大器的实现框图，采用图3所示的毫米波三支线合成网络以及功放芯片，实现毫米波高功率输出。Combined with Figure 1, the integrated millimeter-wave up-conversion components are composed of local oscillator frequency multipliers, local oscillator filters, local oscillator amplifiers, mixers, radio frequency amplifiers, filters, gain amplifiers, power drive amplifiers, and final stage power synthesis Amplifiers and detectors are connected. First, the local oscillator output signal is frequency multiplied. After frequency multiplication, since the output signal includes unnecessary multiple harmonics and fundamental components, it is necessary to add a band-pass filter at the output of the frequency multiplier to obtain the second harmonic component. The signal obtained at this time is small and needs to be amplified, so a local oscillator amplifier is added; then the frequency multiplied local oscillator signal is mixed with the intermediate frequency signal, in order to better suppress out-of-band spurs, after mixing Connect a first-stage high-gain RF amplifier first, and then perform filtering to obtain a signal within the required bandwidth. The signal generally needs to be amplified by a high-power amplifier before being transmitted, but because the gain of the last-stage high-power amplifier is generally not large, Especially in the millimeter wave band, the gain of the last stage power amplifier generally does not exceed 10dB. Therefore, before the final power amplifier, a gain amplifier and a driver amplifier should be added to pre-amplify the RF signal; finally, according to the block diagram of the power synthesis amplifier in Figure 2, the millimeter-wave three-branch synthesis network and power amplifier chip shown in Figure 3 are used. Achieve millimeter wave high power output.

在末级功率合成放大器的实现上，选用三支线定向耦合器来构成功率合成网络，也即图2中的功率分配器和功率合成器。在三支线定向耦合器中没有很细的微带线，也没有很窄的缝隙，其隔离端口所加的隔离电阻的位置对电路性能影响很小。为了增加工作带宽，我们最终选择如图3所示的三支线定向耦合器作为功率分配/合成单元，信号从输入端1输入，一部分由直通端2输出，另一部份耦合信号则通过耦合端3输出，而隔离端4通过50欧姆电阻将反射信号抵消。这种结构输入、输出驻波比小，隔离度高，对加工要求不是很高，在毫米波频段体积也不大，并具有一定的工作带宽，插入损耗、输入输出反射系数都较小、直通以及耦合两路输出端隔离度大，两路输出的幅度相同，相位相差90°。In the realization of the final power synthesis amplifier, three branch line directional couplers are selected to form the power synthesis network, that is, the power divider and power combiner in Figure 2. There is no very thin microstrip line or narrow gap in the three-branch directional coupler, and the position of the isolation resistor added to the isolation port has little influence on the circuit performance. In order to increase the working bandwidth, we finally choose the three-branch directional coupler as shown in Figure 3 as the power distribution/combination unit. The signal is input from theinput terminal 1, part of it is output from thethrough terminal 2, and the other part of the coupled signal is passed through the coupling terminal. 3 output, while theisolated terminal 4 cancels the reflected signal through a 50 ohm resistor. This structure has small input and output VSWR, high isolation, low processing requirements, small size in the millimeter wave frequency band, and a certain working bandwidth. The insertion loss, input and output reflection coefficients are small, and the direct And the isolation of the two output terminals of the coupling is large, the amplitude of the two outputs is the same, and the phase difference is 90°.

末级功率合成放大器采用多芯片合成，功率合成芯片采用Raytheon公司的RMPA39100，其工作频率为37-40GHz，1dB压缩点输出功率为29dBm，小信号增益为18dB，采用四路功率合成，最大的1dB压缩点输出功率可达到33dBm，因此用RMPA39100来进行功率合成可以达到要求，在具体实现上，选择介质损耗小的熔融石英作为微带电路的介质基片以减少合成网络的电路损耗；其厚度为0.127mm，相对介电常数为3.78，导带金属层厚度为0.017mm。在进行多芯片功率合成时，各个芯片必须给予相同的偏置电压和电流，这样才能保证各路功率放大芯片有相同的电气特性。每个MMIC的偏置电路中的金丝焊线尽量一样长，以确保各路金丝上的电压降相同，从而使各个MMIC放大芯片工作在相同的偏置条件下。同时，为了防止大电流流过金丝时熔化金丝，金丝的直径要足够大，并且金丝的长度应尽可能短，可采用两根并联的直径为1.5mil的金丝作为漏极的偏置电压连接焊线。The final power synthesis amplifier adopts multi-chip synthesis, and the power synthesis chip adopts RMPA39100 of Raytheon Company. Its operating frequency is 37-40GHz, the output power of 1dB compression point is 29dBm, and the small signal gain is 18dB. Four-way power synthesis is adopted, and the maximum is 1dB The output power at the compression point can reach 33dBm, so using RMPA39100 for power synthesis can meet the requirements. In terms of specific implementation, fused silica with small dielectric loss is selected as the dielectric substrate of the microstrip circuit to reduce the circuit loss of the synthesis network; its thickness is 0.127mm, the relative permittivity is 3.78, and the thickness of the conduction band metal layer is 0.017mm. When performing multi-chip power synthesis, each chip must be given the same bias voltage and current, so as to ensure that each power amplifier chip has the same electrical characteristics. The gold wire bonding wires in the bias circuit of each MMIC are as long as possible to ensure the same voltage drop on each gold wire, so that each MMIC amplifying chip works under the same bias condition. At the same time, in order to prevent the gold wire from being melted when a large current flows through it, the diameter of the gold wire should be large enough, and the length of the gold wire should be as short as possible. Two parallel gold wires with a diameter of 1.5mil can be used as the drain. The bias voltage is connected to the bonding wire.

在上变频组件集成中，上变频器选用TRW公司的单片HEMT肖特基二极管单平衡混频器MSH108C，它不需要外部偏置，可以用作上混频或下混频，连接时用三根直径0.5mil长度小于10mil的金丝相连；射频放大器与功率增益放大器选用Agilem公司的HMMC-5040高增益宽带MMIC放大器，功率驱动放大器选用Agilent公司的MMIC功率放大器HMMC-5034；倍频器采用砷化镓场效应管(GaAs FET)的有源倍频器，可在至少高达40GHz的输出频率同时提供较高的效率(甚至增益)和较宽的工作频带，对输入功率的要求相当低，噪声系数低，动态范围大，输入端与输出端之间有一定隔离度，采用HMMC-5040作为二倍频器；本振放大器选用Hittite公司的HMC261单片放大器，该放大器是一个工作在20～40GHz范围的GaAs MMIC分布式放大器，只需要单电源供电；本振信号倍频后加入一个微带带通滤波器，带通滤波器的类型很多，而最适合于微波集成电路的带通滤波器是不要求微带电路接地的微带滤波器，采用半波长谐振器平行耦合滤波器形式，采用一个三阶滤波器，通带为36.1GHz～37.5GHz，带内插损为0.9dB；混频后的RF信号也需要加入一个微带带通滤波器滤除杂波，采用一个7阶的半波长谐振器平行耦合滤波器，通带为37.9GHz～40GHz，带内插损为0.9dB；检波器是利用半导体二极管的非线性特性产生直流或低频电流及电压，用以检测微波功率，用作状态监视器时，用定向耦合器分离一部分功率，用检波器监视发射功率的变化，选用MPD公司的肖特基势垒二极管MS8000来实现检波。In the integration of up-conversion components, the up-converter selects TRW's single-chip HEMT Schottky diode single-balanced mixer MSH108C, which does not require external bias and can be used for up-mixing or down-mixing. A gold wire with a diameter of 0.5mil and a length of less than 10mil is connected; the RF amplifier and the power gain amplifier are selected from Agilent's HMMC-5040 high-gain broadband MMIC amplifier, and the power drive amplifier is selected from Agilent's MMIC power amplifier HMMC-5034; the frequency doubler is made of arsenic The active frequency multiplier of GaAs FET can provide high efficiency (even gain) and wide operating frequency band at the output frequency of at least up to 40GHz, and the requirement for input power is quite low, and the noise figure Low, large dynamic range, a certain degree of isolation between the input end and the output end, using HMMC-5040 as the frequency doubler; the local oscillator amplifier uses HMC261 monolithic amplifier from Hittite Company, the amplifier is a working in the range of 20 ~ 40GHz The GaAs MMIC distributed amplifier only needs a single power supply; a microstrip band-pass filter is added after the local oscillator signal is multiplied. There are many types of band-pass filters, and the band-pass filter most suitable for microwave integrated circuits is not The microstrip filter that requires the microstrip circuit to be grounded adopts the form of a half-wavelength resonator parallel coupling filter, and a third-order filter with a passband of 36.1GHz to 37.5GHz and an in-band insertion loss of 0.9dB; The RF signal also needs to add a microstrip bandpass filter to filter out clutter, using a 7th-order half-wavelength resonator parallel coupling filter, the passband is 37.9GHz to 40GHz, and the in-band insertion loss is 0.9dB; the detector is The non-linear characteristics of semiconductor diodes are used to generate DC or low-frequency current and voltage to detect microwave power. When used as a state monitor, a directional coupler is used to separate part of the power, and a detector is used to monitor the change of the transmission power. Tertyl barrier diode MS8000 to achieve detection.

Claims (5)

Translated fromChinese

1、一种基于三支线合成网络的高功率毫米波上变频功放组件，它包括本振倍频器、本振滤波器、本振放大器、混频器、射频放大器、滤波器、增益放大器、功率驱动放大器，本振倍频器用于本振输入端，对输入本振信号进行倍频；倍频后信号经过本振滤波器滤出二次谐波分量；滤出的二倍频信号经过本振放大器放大到混频器所需要的功率；本振放大后的信号与输入的中频信号在混频器中进行上变频；射频放大器对上变频信号进行放大，以更好地抑制带外杂散；滤波器用于射频放大器后对射频信号进行带通滤波，抑制带外杂散；增益放大器、功率驱动放大器用于滤波器后对射频信号进行预放大；其特征在于：功率驱动放大器后设置末级功率合成放大器对射频信号进行高功率放大，输出高功率毫米波信号。1. A high-power millimeter-wave up-conversion power amplifier assembly based on a three-branch synthesis network, which includes a local oscillator frequency multiplier, a local oscillator filter, a local oscillator amplifier, a mixer, a radio frequency amplifier, a filter, a gain amplifier, a power The drive amplifier, the local oscillator frequency multiplier is used at the local oscillator input to double the frequency of the input local oscillator signal; after frequency multiplication, the signal passes through the local oscillator filter to filter out the second harmonic component; the filtered double frequency signal passes through the local oscillator The amplifier is amplified to the power required by the mixer; the amplified signal of the local oscillator and the input intermediate frequency signal are up-converted in the mixer; the RF amplifier amplifies the up-conversion signal to better suppress out-of-band spurs; After the filter is used in the RF amplifier, the RF signal is band-pass filtered to suppress out-of-band spurs; the gain amplifier and the power drive amplifier are used to pre-amplify the RF signal after the filter; it is characterized in that: the final power is set after the power drive amplifier The synthesis amplifier performs high-power amplification on the radio frequency signal, and outputs a high-power millimeter wave signal.2、根据权利要求1所述的基于三支线合成网络的高功率毫米波上变频功放组件，其特征在于：所述末级功率合成放大器采用多芯片功率合成，其包括第一、第二和第三功率分配器，第一、第二、第三和第四功率放大芯片，以及第一、第二和第三功率合成器，其中经预放大的射频信号进入第一功率分配器分成两路信号后分别进入第二和第三功率分配器，然后经第二和第三功率分配器输出的四路信号分别进入第一、第二、第三和第四功率放大芯片功率放大后，第一和第二功率放大芯片的输出由第一功率合成器功率合成输出第一合成射频信号，第三和第四功率放大芯片的输出由第二功率合成器合成输出第二合成射频信号，最后第一和第二合成射频信号输入第三功率合成器后输出最终的射频信号。2. The high-power millimeter-wave up-conversion power amplifier assembly based on the three-branch synthesis network according to claim 1, characterized in that: the final power synthesis amplifier adopts multi-chip power synthesis, which includes first, second and second Three power dividers, the first, second, third and fourth power amplifier chips, and the first, second and third power combiners, wherein the pre-amplified radio frequency signal enters the first power divider and is divided into two signals Then enter the second and third power dividers respectively, and then the four-way signals output by the second and third power dividers enter the first, second, third and fourth power amplifier chips respectively. After power amplification, the first and third The output of the second power amplifier chip is synthesized by the first power combiner to output the first synthesized radio frequency signal, the output of the third and fourth power amplifier chips is synthesized by the second power synthesizer to output the second synthesized radio frequency signal, and finally the first and The second combined radio frequency signal is input to the third power combiner to output the final radio frequency signal.3、根据权利要求1或2所述的基于三支线合成网络的高功率毫米波上变频功放组件，其特征在于：混频器，射频放大器、倍频器、本振放大器均采用单片微波集成电路MMIC实现。3. The high-power millimeter-wave up-conversion power amplifier assembly based on the three-branch synthesis network according to claim 1 or 2, characterized in that: the mixer, radio frequency amplifier, frequency multiplier, and local oscillator amplifier all adopt monolithic microwave integration Circuit MMIC implementation.4、根据权利要求1或2所述的基于三支线合成网络的高功率毫米波上变频功放组件，其特征在于：滤波器采用微带形式的半波长谐振器平行耦合滤波器。4. The high-power millimeter-wave up-conversion power amplifier assembly based on a three-branch synthesis network according to claim 1 or 2, wherein the filter is a half-wavelength resonator parallel coupling filter in the form of a microstrip.5、根据权利要求1或2所述的基于三支线合成网络的高功率毫米波上变频功放组件，其特征在于：末级功率合成放大器输出端耦合一路信号至检波器，用以检测输出功率，作为状态监视器。5. The high-power millimeter-wave up-conversion power amplifier assembly based on the three-branch synthesis network according to claim 1 or 2, characterized in that: the output terminal of the final power synthesis amplifier is coupled to a wave detector to detect the output power, as a status monitor.

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