CN1313640C - Process for plasma strengthening type chemical vapour phase deposition treatment - Google Patents
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Abstract
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Description
Translated fromChinese技术领域technical field
本发明涉及半导体制造技术领域，尤其涉及一种等离子体增强式化学气相沉积(PECVD)处理方法。The invention relates to the technical field of semiconductor manufacturing, in particular to a plasma-enhanced chemical vapor deposition (PECVD) treatment method.
背景技术Background technique
在半导体制造工艺中，为制作分立器件与集成电路，需要在晶片的衬底上沉积不同种类的薄膜。在沉积薄膜的方法中，等离子体增强式化学气相沉积(PECVD，Plasma Enhanced Chemical Vapor Deposition)是一种常用的方法。该方法是利用能量增强CVD反应，除了一般CVD系统的热能外，另加等离子体能量。In the semiconductor manufacturing process, in order to make discrete devices and integrated circuits, different types of thin films need to be deposited on the wafer substrate. Among the methods for depositing thin films, plasma enhanced chemical vapor deposition (PECVD, Plasma Enhanced Chemical Vapor Deposition) is a commonly used method. The method uses energy to enhance the CVD reaction, and in addition to the thermal energy of the general CVD system, additional plasma energy is added.
图1给出了PECVD方法的常用装置的示意图，该PECVD装置为一个PECVD反应炉。如图1所示，反应炉100由圆柱形玻璃或铝构成，上下两端均以铝板封口。圆柱形筒内部有上下两块平行铝板当作电极，上电极101接射频(RF)电压，下电极102接地。两电极间的射频电压将产生等离子体放电。有一个半导体晶片130置于加热基座120上，可以通过位于加热基座120下面的加热器对晶片130进行加热，反应气体由上电极101周围的进气孔110流入反应炉100内，反应炉100下部接抽气泵(图中未示)，待反应结束后将炉内气体从出气孔111抽出。当然，上述图1只是举出了有一个半导体晶片130的例子，而实际上，本发明的方法不限于被加工的半导体晶片的个数，无论是一个还是多个都可适用于本发明的方法。FIG. 1 shows a schematic diagram of a common device for PECVD method, and the PECVD device is a PECVD reactor. As shown in FIG. 1 , the reaction furnace 100 is made of cylindrical glass or aluminum, and the upper and lower ends are sealed with aluminum plates. There are two parallel aluminum plates inside the cylinder as electrodes, the upper electrode 101 is connected to radio frequency (RF) voltage, and the lower electrode 102 is grounded. An RF voltage between the two electrodes will generate a plasma discharge. A semiconductor wafer 130 is placed on the heating base 120, and the wafer 130 can be heated by a heater located below the heating base 120, and the reaction gas flows into the reaction furnace 100 through the air inlet 110 around the upper electrode 101, and the reaction furnace The bottom of 100 is connected with an air pump (not shown in the figure), and the gas in the furnace is extracted from the gas outlet 111 after the reaction is finished. Certainly, above-mentioned Fig. 1 just cited the example that has a semiconductor wafer 130, and in fact, the method of the present invention is not limited to the number of processed semiconductor wafers, no matter be one or a plurality of all can be applicable to the method of the present invention .
图2示出了传统PECVD处理方法步骤的流程图。从图2中可以看出，传统的PECVD方法包括稳定化210、沉积220和抽气230三个步骤。待处理的晶片130的表面为衬底层，该衬底层可以是硅、或铜、或SiO2、或氟掺杂SiO2(Fluorine doped SiO2)、或碳掺杂SiO2(Carbon dopedSiO2)、或以上材料的混合物。下面请同时结合图1所示，首先，将待处理的晶片130放入到反应炉100中的加热基座120上，然后开始对该晶片130的表面进行PECVD处理。Fig. 2 shows a flow chart of the steps of a conventional PECVD treatment method. It can be seen from FIG. 2 that the traditional PECVD method includes three steps of stabilization 210 , deposition 220 and pumping 230 . The surface of the wafer 130 to be processed is a substrate layer, which can be silicon, or copper, or SiO2 , or fluorine doped SiO2 (Fluorine doped SiO2 ), or carbon doped SiO2 (Carbon dopedSiO2 ), or a mixture of the above materials. Please refer to FIG. 1 below. Firstly, the wafer 130 to be processed is placed on the heating base 120 in the reaction furnace 100 , and then PECVD treatment is performed on the surface of the wafer 130 .
首先，是稳定化步骤210。在这个步骤中，并不开启射频能，只是向反应炉100中通入前驱气体，例如NH3、N2O和N2等，该步骤大概持续10秒钟。通过这个步骤，在反应炉中形成了均匀而稳定的前驱气体氛围，也使待处理的晶片130表面与其周围的前驱气体有了充分而均匀的接触。First, there is a stabilization step 210 . In this step, the RF energy is not turned on, but the precursor gas, such as NH3 , N2 O and N2 , is fed into the reaction furnace 100 , and this step lasts about 10 seconds. Through this step, a uniform and stable precursor gas atmosphere is formed in the reaction furnace, and the surface of the wafer 130 to be processed is fully and uniformly contacted with the surrounding precursor gas.
然后，是沉积步骤220。在这个步骤中，打开射频能，继续通入前驱气体，同时通入反应气体，如SiH4、三甲基硅烷、四甲基硅烷等。射频能的开启，使得在反应炉100中产生等离子体。反应气体在等离子体能量和热能的综合作用下，发生离子化，所生成的Si悬挂键与生成的O、N、H等不饱和基团发生反应，生成SiN、SiO2、SiON等，并沉积在晶片130表面，形成SiN、SiO2、SiON等薄膜。Then, there is a deposition step 220 . In this step, the RF energy is turned on, the precursor gas is continuously fed, and the reaction gas, such as SiH4 , trimethylsilane, tetramethylsilane, etc., is fed in at the same time. Turning on the RF energy causes plasma to be generated in the reaction furnace 100 . Under the combined effect of plasma energy and thermal energy, the reaction gas is ionized, and the generated Si dangling bonds react with the generated unsaturated groups such as O, N, H, etc. to generate SiN, SiO2 , SiON, etc., and deposit On the surface of the wafer 130, a thin film of SiN, SiO2 , SiON, or the like is formed.
最后，是抽气步骤230。在这个步骤中，关闭射频能，停止前驱气体和反应气体的通入，并用抽气泵将反应炉中的剩余气体抽出反应炉。Finally, there is the pumping step 230 . In this step, the radio frequency energy is turned off, the introduction of the precursor gas and the reaction gas is stopped, and the residual gas in the reaction furnace is pumped out of the reaction furnace by a suction pump.
上述传统PECVD方法的缺陷在于，在上述的抽气步骤230中，射频能被关闭，而因射频能的供应是使得反应继续进行的前提条件，所以这时在上述沉积步骤中进行的沉积过程被突然停止。而此时的情况是，还有很多未封端的Si键处于已经沉积在晶片上的薄膜表面，即表面的反应还没有完全终止。The defect of the above-mentioned traditional PECVD method is that in the above-mentioned pumping step 230, the RF energy is turned off, and because the supply of RF energy is a prerequisite for the reaction to continue, the deposition process carried out in the above-mentioned deposition step is blocked at this time. stop suddenly. However, the situation at this time is that there are still many unterminated Si bonds on the surface of the film deposited on the wafer, that is, the reaction on the surface has not been completely terminated.
传统的PECVD处理所产生的这种不完全表面反应，使得在沉积得到的SiN薄膜表面还有未封端/悬挂的Si键。这些未封端/悬挂的Si键，在接下来的薄膜沉积步骤中就成了成核位置，在这些成核位置上，会比其他位置具有更快的沉积速率，导致在其上所沉积的上覆(overlying)薄膜中形成凸块缺陷。这些凸块会掩盖其他致命的缺陷以及未打通的过孔，最终将可能导致很多缺陷，例如表面泄漏和可靠性故障，即与时间相关的介电击穿(TDDB，time dependent dielectric breakdown)。This incomplete surface reaction produced by traditional PECVD treatment makes there are uncapped/dangling Si bonds on the surface of the deposited SiN film. These uncapped/dangling Si bonds become nucleation sites in the next film deposition step, and at these nucleation sites, they will have a faster deposition rate than other sites, resulting in the deposition of Bump defects are formed in the overlying film. These bumps will cover up other fatal defects and unopened vias, which may eventually lead to many defects, such as surface leakage and reliability failure, that is, time-dependent dielectric breakdown (TDDB, time dependent dielectric breakdown).
发明内容Contents of the invention
为了克服上述不足，本发明的主要目的就是要提供一种可消除沉积薄膜缺陷的PECVD方法。In order to overcome the above disadvantages, the main purpose of the present invention is to provide a PECVD method that can eliminate the defects of the deposited film.
根据本发明的目的，本发明提供了一种等离子体增强式化学气相沉积处理方法，用于在半导体晶片表面上沉积薄膜，包括如下步骤：稳定化步骤，即向反应炉中通入前驱气体；沉积步骤，即向反应炉中输入射频能，继续通入前驱气体，同时通入反应气体；钝化步骤，即停止通入反应气体，但继续输入射频能；以及抽气步骤，即关闭射频能，停止通入前驱气体，用抽气泵抽出反应炉中的剩余气体。According to the object of the present invention, the present invention provides a plasma-enhanced chemical vapor deposition treatment method for depositing a thin film on the surface of a semiconductor wafer, comprising the following steps: a stabilization step, that is, a precursor gas is introduced into a reaction furnace; The deposition step is to input radio frequency energy into the reaction furnace, continue to feed the precursor gas, and simultaneously feed the reaction gas; the passivation step is to stop feeding the reaction gas, but continue to input radio frequency energy; and the pumping step is to turn off the radio frequency energy , stop feeding the precursor gas, and use the air pump to extract the remaining gas in the reaction furnace.
其中，在上述钝化步骤中：射频能与所述沉积步骤的射频能相同或更低，可以是5到1000瓦；钝化时间为2到100秒；所述钝化步骤中继续通入前驱气体并持续3-15秒钟；前驱气体的通入速度为原流速或1-2000sccm，前驱气体是NH3、N2O和N2的混合气体，反应气体是SiH4、三甲基硅烷、四甲基硅烷。其中，半导体晶片的表面为硅、或铜、或SiO2、或氟掺杂SiO2、或碳掺杂SiO2、或以上材料的混合物。Wherein, in the above-mentioned passivation step: the radio frequency energy is the same as or lower than that of the deposition step, and can be 5 to 1000 watts; the passivation time is 2 to 100 seconds; The gas lasts for 3-15 seconds; the feed rate of the precursor gas is the original flow rate or 1-2000 sccm, the precursor gas is a mixed gas of NH3 , N2 O and N2 , and the reaction gas is SiH4 , trimethylsilane, Tetramethylsilane. Wherein, the surface of the semiconductor wafer is silicon, or copper, or SiO2 , or fluorine-doped SiO2 , or carbon-doped SiO2 , or a mixture of the above materials.
本发明的有益效果是：因在沉积步骤之后、抽气步骤之前，增加了钝化步骤，使得晶片薄膜表面上未反应完全的Si键继续反应直至结束，因此能够消除不完全表面反应和悬挂键，从而避免了上覆薄膜中凸块的形成，进而能够消除由此引起的缺陷，提高了产品的合格率。The beneficial effects of the present invention are: after the deposition step and before the pumping step, a passivation step is added, so that the incompletely reacted Si bonds on the surface of the wafer film continue to react until the end, so that incomplete surface reactions and dangling bonds can be eliminated , thereby avoiding the formation of bumps in the overlying film, thereby eliminating the defects caused thereby, and improving the qualified rate of products.
附图说明Description of drawings
图1是一般的PECVD装置的示意图；Fig. 1 is the schematic diagram of general PECVD device;
图2是传统PECVD方法所包含步骤的流程图；Fig. 2 is the flowchart of the step that traditional PECVD method comprises;
图3是根据本发明的PECVD方法所包含步骤的流程图。Fig. 3 is a flowchart of the steps involved in the PECVD method according to the present invention.
具体实施方式Detailed ways
下面将参照附图描述本发明的优选实施例。Preferred embodiments of the present invention will be described below with reference to the accompanying drawings.
本发明的PECVD方法仍然使用如图1所示的反应炉100。The PECVD method of the present invention still uses the reaction furnace 100 shown in FIG. 1 .
图3是根据本发明的PECVD方法的流程图，通过对比传统方法的图2可看出，本发明提供的PECVD处理方法相对于传统PECVD方法，在沉积步骤和抽气步骤之间加入了一个钝化步骤。下面将结合图3对本发明的PECVD方法的具体步骤加以说明。Fig. 3 is the flow chart of PECVD method according to the present invention, as can be seen by comparing Fig. 2 of traditional method, PECVD treatment method provided by the present invention has added a passivation between deposition step and pumping step with respect to traditional PECVD method transformation step. The specific steps of the PECVD method of the present invention will be described below with reference to FIG. 3 .
从图3中可以看出，本发明提供的PECVD处理方法包括四个步骤。It can be seen from FIG. 3 that the PECVD treatment method provided by the present invention includes four steps.
首先是稳定化步骤310。在该步骤中，没有射频能输入。只是通过图1所示的气体入口110使前驱气体例如NH3、N2O和N2，分别以0-2000sccm(standard cubic centimeter per minute，sccm)、0-5000sccm和0-10000sccm的流速流入到反应炉100中，并使气体的流入时间持续10秒。First comes the stabilization step 310 . During this step, no RF energy is input. Only through the gas inlet 110 shown in Figure 1, the precursor gases such as NH3 , N2 O and N2 flow into the In the reaction furnace 100, the inflow time of the gas was continued for 10 seconds.
然后是沉积步骤320。在该步骤中，继续向反应炉100中通入前驱气体；接着，接入5到1000瓦的射频能；然后，从图1中示出的气体入口110使反应气体，例如SiH4、三甲基硅烷、四甲基硅烷分别以5-1000sccm、5-2000sccm和5-2000sccm的流速流入到反应炉100中，根据期望沉积的薄膜厚度，所需要的沉积时间可以从6秒到100秒。Then there is a deposition step 320 . In this step, continue to feed the precursor gas into the reaction furnace 100; then, connect 5 to 1000 watts of radio frequency energy; then, let the reaction gas, such as SiH4 Basesilane and tetramethylsilane flow into the reaction furnace 100 at flow rates of 5-1000sccm, 5-2000sccm and 5-2000sccm respectively, and the required deposition time can be from 6 seconds to 100 seconds according to the thickness of the desired deposited film.
接下来是钝化步骤330，这一步骤为本发明的关键所在，这一钝化步骤的钝化时间为2到100秒。此时，将射频能调节到与沉积步骤320中相同或较低的射频能，本实施例中采用的射频能为1-500瓦并停止向反应炉100中通入反应气体，但继续以原流速或1-2000sccm的流速通入前驱气体并持续3-15秒钟。Next is the passivation step 330, which is the key point of the present invention, and the passivation time of this passivation step is 2 to 100 seconds. At this time, the radio frequency energy is adjusted to the same or lower radio frequency energy as that in the deposition step 320. The radio frequency energy used in this embodiment is 1-500 watts and the reaction gas is stopped feeding into the reaction furnace 100, but continues to The precursor gas is introduced at a flow rate of 1-2000 sccm for 3-15 seconds.
在步骤330中，停止通入反应气体的目的是不再在反应炉中产生新的未封端/悬挂Si键。这种情况下，继续通入前驱气体，并保持射频能的输入，就使得在步骤320结束时未反应的剩余未封端/悬挂Si键，可以继续与通入的前驱气体反应。从而使得沉积步骤可以继续进行，直到剩余的未封端/悬挂Si键也全部反应技术为止，这样就避免了不完全反应的发生，从而避免了由此带来的缺陷。In step 330, the purpose of stopping the feeding of the reaction gas is to stop generating new uncapped/dangling Si bonds in the reaction furnace. In this case, continue to feed the precursor gas and keep the input of RF energy, so that the unreacted remaining uncapped/dangling Si bonds at the end of step 320 can continue to react with the fed precursor gas. Thus, the deposition step can be continued until the remaining uncapped/dangling Si bonds are fully reacted, thus avoiding the occurrence of incomplete reaction, thereby avoiding the defects caused by it.
最后是抽气步骤340。这时，将射频能关闭，通过抽气泵将反应炉中的剩余气体抽出，直到反应炉中的压力降至3-100托。该步骤大概需要5秒钟。Finally there is the pumping step 340 . At this time, the radio frequency energy is turned off, and the remaining gas in the reaction furnace is pumped out by an air pump until the pressure in the reaction furnace drops to 3-100 Torr. This step takes about 5 seconds.
本发明所提出的加入了钝化步骤的PECVD处理方法，并不限于SiN薄膜的沉积，而是适用于所有的含Si薄膜的处理。通过改变前驱气体、反应气体的成分，本发明提出的加入了钝化步骤的PECVD处理方法还可以用于处理例如SiO2、SiON、SiOF薄膜等等，并可以达到同样的避免由不完全反应产生未封端/悬挂键、从而引起问题的效果。The PECVD treatment method with the passivation step proposed in the present invention is not limited to the deposition of SiN films, but is applicable to the treatment of all Si-containing films. By changing the composition of the precursor gas and the reaction gas, the PECVD treatment method with the passivation step proposed by the present invention can also be used to process SiO2 , SiON, SiOF films, etc., and can achieve the same avoidance of incomplete reaction. Uncapped/dangling keys, causing problematic effects.
可以看出，相对于传统技术，本发明提供了一种PECVD方法，在其特征是：在沉积步骤和抽气步骤之间加入了额外的等离子体终止步骤，即钝化步骤。在该步骤中，不再通入反应气体，而继续通入前驱气体，并保持射频能的输入，从而使得在沉积步骤中反应未结束的薄膜表面，即未封端键可以继续完成反应，从而消除了未封端键，进而能够消除由未封端键所引起的问题。It can be seen that, compared with the traditional technology, the present invention provides a PECVD method, which is characterized in that an additional plasma termination step, that is, a passivation step, is added between the deposition step and the pumping step. In this step, the reaction gas is no longer fed, but the precursor gas is continued to be fed, and the input of radio frequency energy is kept, so that the film surface that has not been reacted in the deposition step, that is, the uncapped bond can continue to complete the reaction, thereby Uncapped bonds are eliminated, which in turn can eliminate problems caused by uncapped bonds.
尽管本发明是参照其特定的优选实施例来描述的，但本领域的技术人员应该理解，在不脱离由所附权利要求限定的本发明的精神和范围的情况下，可以对其进行形式和细节的各种修改。Although the invention has been described with reference to certain preferred embodiments thereof, it will be understood by those skilled in the art that changes may be made in form and form without departing from the spirit and scope of the invention as defined by the appended claims. Various modifications of details.
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| CN1598049A (en) | 2005-03-23 |
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