CN1265446C - A method of manufacturing a thin film transistor - Google Patents

Abstract

Translated fromChinese

一基底表面形成有一薄膜晶体管的一栅极。首先依序于该栅极上形成一栅极绝缘层与一非晶硅层，再进行一去氢步骤，并将该非晶硅层转化为一结晶硅层。接着于该栅极上形成一掺杂半导体层，并去除部分的该掺杂半导体层与该结晶硅层。最后于该基底表面形成该薄膜晶体管的一源极与一漏极，并于该基底上形成一钝化层。A gate electrode of a thin film transistor is formed on a substrate surface. First, a gate insulating layer and an amorphous silicon layer are sequentially formed on the gate electrode, and then a dehydrogenation step is performed to convert the amorphous silicon layer into a crystalline silicon layer. Next, a doped semiconductor layer is formed on the gate electrode, and portions of the doped semiconductor layer and the crystalline silicon layer are removed. Finally, a source electrode and a drain electrode of the thin film transistor are formed on the substrate surface, and a passivation layer is formed on the substrate.

Description

Translated fromChinese

一种薄膜晶体管的制作方法A method of manufacturing a thin film transistor

发明所属的技术领域The technical field to which the invention belongs

本发明提供一种形成有机发光二极管(organic light-emitting diode，OLED)显示器的薄膜晶体管(thin film transistor，TFT)的方法，尤指一种制作具有结晶硅(crystalline silicon)层的薄膜晶体管的方法。The invention provides a method for forming a thin film transistor (thin film transistor, TFT) of an organic light-emitting diode (organic light-emitting diode, OLED) display, especially a method for manufacturing a thin film transistor with a crystalline silicon (crystalline silicon) layer .

先前技术prior art

在平面显示器中，有机发光二极管显示器虽然起步较晚，然而却以其具备自发光、无视角限制、高应答速度、省电、可全彩化、结构简单以及操作环境温度范围大等优势，已逐渐在中、小尺寸携带式显示器领域中受到瞩目。Among the flat-panel displays, although the organic light-emitting diode display started late, it has the advantages of self-illumination, no viewing angle limitation, high response speed, power saving, full-color, simple structure, and wide operating temperature range. Gradually attract attention in the field of small and medium-sized portable displays.

请参考图1至图4，图1至图4为已知形成有机发光二极管(organiclight-emitting diode，OLED)显示器的薄膜晶体管(thin film transistor，TFT)的方法示意图。如图1所示，玻璃基底10上形成有该薄膜晶体管的由铜(Cu)金属所构成的栅极12。首先进行等离子体增强化学气相沉积(plasma enhancedchemical vapor deposition，PECVD)工艺，于栅极12上形成由氧化硅(siliconoxide，SiO_x)、氮化硅(silicon nitride，SiN_y)或氮氧化硅(oxynitride，SiON)所构成的栅极绝缘(gate insulating，GI)层14，随后再于栅极绝缘层14上依序形成非晶硅(amorphous silicon)层16和掺杂(doped)半导体层(n⁺layer)18。Please refer to FIG. 1 to FIG. 4 . FIG. 1 to FIG. 4 are schematic diagrams of a known method of forming a thin film transistor (thin film transistor, TFT) of an organic light-emitting diode (organic light-emitting diode, OLED) display. As shown in FIG. 1 , agate 12 of the thin film transistor made of copper (Cu) metal is formed on aglass substrate 10 . First, a plasma enhanced chemical vapor deposition (PECVD) process is performed to form silicon oxide (silicon oxide, SiO_x ), silicon nitride (silicon nitride, SiN_y ) or silicon oxynitride (oxynitride) on thegate 12 , SiON) composed of a gate insulating (gate insulating, GI)layer 14, and then sequentially forming an amorphous silicon (amorphous silicon)layer 16 and a doped (doped) semiconductor layer (n⁺ layer)18.

如图2所示，接着进行第一光蚀工艺(photo-etching-process，PEP)，以去除部分的掺杂半导体层18与非晶硅层16。之后于玻璃基底10上形成氧化铟锡(indium tin oxide，ITO)层20，并随即进行一第二光蚀工艺，以移除部分的氧化铟锡层20。如图3所示，接着先于基底10上形成由钨、铬、铜、钼或上述各金属的合金所构成的金属层22，再进行第三光蚀工艺，去除部分的金属层22与掺杂半导体层18，以于基底10表面形成该薄膜晶体管的源极24与漏极26，并同时暴露出非晶硅层16。As shown in FIG. 2 , a first photo-etching-process (PEP) is then performed to remove part of thedoped semiconductor layer 18 and theamorphous silicon layer 16 . Afterwards, an indium tin oxide (ITO)layer 20 is formed on theglass substrate 10 , and a second photoetching process is then performed to remove part of theITO layer 20 . As shown in FIG. 3 , ametal layer 22 made of tungsten, chromium, copper, molybdenum or alloys of the above metals is first formed on thesubstrate 10, and then a third photoetching process is performed to remove part of themetal layer 22 and the doped metal. Theimpurity semiconductor layer 18 is used to form thesource 24 and thedrain 26 of the thin film transistor on the surface of thesubstrate 10 and expose theamorphous silicon layer 16 at the same time.

最后如图4所示，于基底10上形成由氧化硅或氮化硅所构成的钝化层(passivation layer)28，并进行第四光蚀工艺，去除部分的钝化层28，以完成该有机发光二极管显示器的该薄膜晶体管的制作。Finally, as shown in FIG. 4, a passivation layer (passivation layer) 28 made of silicon oxide or silicon nitride is formed on thesubstrate 10, and a fourth photoetching process is performed to remove part of thepassivation layer 28 to complete the process. Fabrication of this thin-film transistor for organic light-emitting diode displays.

然而由于非晶硅层16是由未结晶的硅分子所构成，因此电子在非晶硅层16具有较低的迁移率(mobility)，除此之外，存在于非晶硅层16中的氢原子与硅原子的键结(Si-H)或硅原子的悬键，亦会造成电子被捕捉(trap)于非晶硅层16之中。故当该薄膜晶体管处于长时间操作的状况下，即会造成电子滞留于非晶硅层16内，进而渗入栅极绝缘层14中，使该薄膜晶体管承受一电压应力(voltage stress)。久而久之，此一电压应力便会造成该薄膜晶体管的阈值电压(threshold voltage，V_th)升高，导致该薄膜晶体管的开启电流(turn on current，I_on)降低而使该有机发光二极管显示器的亮度减少，严重影响产品的显示品质。However, since theamorphous silicon layer 16 is made of uncrystallized silicon molecules, electrons have lower mobility (mobility) in theamorphous silicon layer 16. In addition, the hydrogen present in theamorphous silicon layer 16 The bonding between atoms and silicon atoms (Si—H) or the dangling bonds of silicon atoms will also cause electrons to be trapped in theamorphous silicon layer 16 . Therefore, when the thin film transistor is operated for a long time, electrons will stay in theamorphous silicon layer 16 and penetrate into thegate insulating layer 14, so that the thin film transistor is subjected to a voltage stress. Over time, this voltage stress will cause the threshold voltage (threshold voltage, V_th ) of the thin film transistor to increase, resulting in a decrease in the turn on current (I_on ) of the thin film transistor, thereby reducing the brightness of the OLED display. The reduction will seriously affect the display quality of the product.

发明内容Contents of the invention

因此本发明的主要目的在于提供一种形成有机发光二极管(organiclight-emitting diode，OLED)显示器的薄膜晶体管(thin film transistor，TFT)的方法，以解决上述已知制造方法中，因该薄膜晶体管的阈值电压(thresholdvoltage，V_th)升高而造成该薄膜晶体管的开启电流(turn on current，I_on)降低，导致该有机发光二极管显示器的亮度减少的问题。Therefore, the main purpose of the present invention is to provide a method for forming a thin film transistor (TFT) of an organic light-emitting diode (OLED) display, so as to solve the problems caused by the thin film transistor in the above-mentioned known manufacturing methods. The increase of the threshold voltage (threshold voltage, V_th ) causes the decrease of the turn on current (I_on ) of the TFT, which leads to the decrease of the brightness of the OLED display.

在本发明的最佳实施例中，该薄膜晶体管是形成于基底上。首先于该基底上沉积第一金属层，并对该第一金属层进行第一光蚀工艺(photo-ehching-process，PEP)，以于该基底表面形成该薄膜晶体管的栅极。接着依序于该栅极上形成栅极绝缘(gate insulating，GI)层和第一非晶硅(firstamorphous silicon)层，并随后进行去氢步骤(dehydrogen treatment)，以移除该第一非晶硅层中的氢原子。接着先进行再结晶工艺(re-crystallizing process)，以将该第一非晶硅层转化为结晶硅(crystalline silicon)层，再于该栅极上形成第二非晶硅(second amorphous silicon)层。之后先于该栅极上形成一掺杂(doped)半导体层(n⁺layer)，再进行第二光蚀工艺，以去除部分的该掺杂半导体层、该第二非晶硅层与该结晶硅层。随后于该基底上形成第二金属层，并进行第三光蚀工艺，以于该基底表面形成该薄膜晶体管的源极与漏极，并同时去除部分的该掺杂半导体层，以暴露出该第二非晶硅层。最后于该基底上形成一钝化层(passivation layer)，覆盖于该源极与该漏极的表面。In a preferred embodiment of the present invention, the thin film transistor is formed on a substrate. First, a first metal layer is deposited on the substrate, and a first photo-etching process (PEP) is performed on the first metal layer to form the gate of the thin film transistor on the surface of the substrate. Then sequentially forming a gate insulating (GI) layer and a first amorphous silicon (firstamorphous silicon) layer on the gate, and then performing a dehydrogen treatment to remove the first amorphous Hydrogen atoms in the silicon layer. Next, a re-crystallizing process is performed to convert the first amorphous silicon layer into a crystalline silicon layer, and then a second amorphous silicon layer is formed on the gate . Afterwards, a doped semiconductor layer (n⁺ layer) is formed on the gate, and then a second photoetching process is performed to remove part of the doped semiconductor layer, the second amorphous silicon layer and the crystal silicon layer. Then a second metal layer is formed on the substrate, and a third photoetching process is performed to form the source and drain of the thin film transistor on the surface of the substrate, and part of the doped semiconductor layer is removed at the same time to expose the the second amorphous silicon layer. Finally, a passivation layer is formed on the substrate to cover the surface of the source and the drain.

根据本发明，还提供一种有机发光二极管显示器的薄膜晶体管的制作方法，该薄膜晶体管形成于该有机发光二极管显示器的基底上，该方法包含下列步骤：According to the present invention, there is also provided a method for manufacturing a thin film transistor of an organic light emitting diode display, where the thin film transistor is formed on a substrate of the organic light emitting diode display, the method comprising the following steps:

于该基底表面形成该薄膜晶体管的栅极；forming the gate of the thin film transistor on the surface of the substrate;

依序于该栅极上形成栅极绝缘层和非晶硅层；sequentially forming a gate insulating layer and an amorphous silicon layer on the gate;

进行去氢步骤，以移除该非晶硅层中的氢原子；performing a dehydrogenation step to remove hydrogen atoms in the amorphous silicon layer;

进行再结晶工艺，以将该非晶硅层转化为结晶硅层；performing a recrystallization process to convert the amorphous silicon layer into a crystalline silicon layer;

于该栅极上形成掺杂半导体层；forming a doped semiconductor layer on the gate;

进行第一光蚀工艺，以去除部分的该掺杂半导体层与该结晶硅层；performing a first photoetching process to remove part of the doped semiconductor layer and the crystalline silicon layer;

于该基底上形成金属层；forming a metal layer on the substrate;

进行第二光蚀工艺，以于该基底表面形成该薄膜晶体管的源极与漏极，并同时去除部分的该掺杂半导体层，以暴露出该结晶硅层；以及performing a second photoetching process to form the source and drain of the thin film transistor on the surface of the substrate, and simultaneously remove part of the doped semiconductor layer to expose the crystalline silicon layer; and

于该基底上形成钝化层。A passivation layer is formed on the substrate.

根据本发明，还提供一种有机发光二极管显示器的薄膜晶体管，该薄膜晶体管设于该有机发光二极管显示器的基底上，该薄膜晶体管包含有：According to the present invention, there is also provided a thin film transistor of an organic light emitting diode display, the thin film transistor is arranged on the substrate of the organic light emitting diode display, and the thin film transistor includes:

形成在该基底上的栅极；a gate formed on the substrate;

形成在该栅极上的栅极绝缘层；a gate insulating layer formed on the gate;

形成在该栅极绝缘层上的结晶硅层；a crystalline silicon layer formed on the gate insulating layer;

形成在该结晶硅层上的非晶硅层；an amorphous silicon layer formed on the crystalline silicon layer;

形成在该非晶硅层上的掺杂半导体层，部分的该掺杂半导体层被去除，用以暴露出部分的该非晶硅层；a doped semiconductor layer formed on the amorphous silicon layer, part of the doped semiconductor layer is removed to expose a part of the amorphous silicon layer;

形成在该掺杂半导体层上的源极与漏极；以及a source and a drain formed on the doped semiconductor layer; and

于该基底上形成的钝化层，覆盖于该源极与该漏极的表面。The passivation layer formed on the base covers the surface of the source and the drain.

由于本发明的方法是于制作该薄膜晶体管的过程中，先进行该去氢步骤以移除该第一非晶硅层中的氢原子，再由该再结晶工艺而将该第一非晶硅层转化为该结晶硅层，故可消除存在于该结晶硅层中的氢原子与硅原子的键结(Si-H)或是硅原子的悬键，并增加该结晶硅层中硅分子的晶粒大小。因此电子在该结晶硅层中具有较高的迁移率(mobility)而不会被该结晶硅层捕捉(trap)，更不会渗入该栅极绝缘层中，即使该薄膜晶体管处于长时间操作的状况下，也不会使该薄膜晶体管因承受一电压应力(voltage stress)而造成该薄膜晶体管的阈值电压(threshold voltage，V_th)升高。该薄膜晶体管的开启电流(turnon current，I_on)因而得以处于一稳定的状态下，使该有机发光二极管显示器保持一定的亮度，确保产品的显示品质。Since the method of the present invention is in the process of manufacturing the thin film transistor, the dehydrogenation step is first performed to remove the hydrogen atoms in the first amorphous silicon layer, and then the first amorphous silicon layer is formed by the recrystallization process. The layer is converted into the crystalline silicon layer, so the bond (Si-H) between the hydrogen atom and the silicon atom or the dangling bond of the silicon atom existing in the crystalline silicon layer can be eliminated, and the concentration of silicon molecules in the crystalline silicon layer can be increased. grain size. Therefore, electrons have higher mobility (mobility) in the crystalline silicon layer and will not be trapped by the crystalline silicon layer, and will not penetrate into the gate insulating layer, even if the thin film transistor is operated for a long time. Under the circumstances, the threshold voltage (threshold voltage, V_th ) of the thin film transistor will not increase due to a voltage stress on the thin film transistor. The turn-on current (I_on ) of the thin film transistor is therefore in a stable state, so that the OLED display can maintain a certain brightness and ensure the display quality of the product.

图示的简单说明Simple explanation of the diagram

图1至图4为已知形成有机发光二极管显示器的薄膜晶体管的方法示意图。1 to 4 are schematic diagrams of known methods for forming TFTs for OLED displays.

图5至图9为本发明形成一有机发光二极管显示器的一薄膜晶体管的方法示意图。5 to 9 are schematic diagrams of a method for forming a thin film transistor of an OLED display according to the present invention.

图10为本发明的第二实施例中所形成的该有机发光二极管显示器的该薄膜晶体管的示意图。FIG. 10 is a schematic diagram of the TFT of the OLED display formed in the second embodiment of the present invention.

实施方式Implementation

请参考图5至图9，图5至图9为本发明形成有机发光二极管(organiclight-emitting diode，OLED)显示器的薄膜晶体管(thin film transistor，TFT)的方法示意图。如图5所示，基底40上形成有该薄膜晶体管的栅极42。通常，基底40为玻璃基底、石英基底或塑胶基底，而栅极42则是由钨(W)、铬(Cr)、铜(Cu)、钼(Mo)或上述各金属的合金所构成。首先进行等离子体增强化学气相沉积(plasma enhanced chemical vapor deposition，PECVD)工艺，于栅极42上形成由氧化硅(silicon oxide，SiO_x)、氮化硅(silicon nitride，SiN_y)或氮氧化硅(oxynitride，SiON)所构成的栅极绝缘(gate insulating，GI)层44，再于栅极绝缘层44上形成第一非晶硅(first amorphous silicon)层46。Please refer to FIG. 5 to FIG. 9 . FIG. 5 to FIG. 9 are schematic diagrams of a method for forming a thin film transistor (thin film transistor, TFT) of an organic light-emitting diode (organic light-emitting diode, OLED) display according to the present invention. As shown in FIG. 5 , thegate 42 of the TFT is formed on thesubstrate 40 . Usually, thesubstrate 40 is a glass substrate, a quartz substrate or a plastic substrate, and thegate 42 is made of tungsten (W), chromium (Cr), copper (Cu), molybdenum (Mo) or alloys of the above metals. First, a plasma enhanced chemical vapor deposition (PECVD) process is performed to form silicon oxide (silicon oxide, SiO_x ), silicon nitride (silicon nitride, SiN_y ) or silicon oxynitride on the gate 42 A gate insulating (GI)layer 44 made of (oxynitride, SiON), and a first amorphous silicon (first amorphous silicon) layer 46 is formed on thegate insulating layer 44 .

如图6所示，接着先于真空高温的环境下进行历时约一小时的去氢步骤(dehydrogen treatment)以移除该第一非晶硅层中的氢原子，再进行一再结晶工艺(re-crystallizing process)，以将第一非晶硅层46转化为一结晶硅(crystalline silicon)层48。在本发明的最佳实施例中，该再结晶工艺是利用一激光光束(未显示)所进行的激光回火再结晶(laser annealing re-crystallizingprocess)工艺，而结晶硅层48则是为微晶硅(micro-crystalline silicon)层。之后，先于栅极42上形成第二非晶硅(second amorphous silicon)层50，再形成掺杂(doped)半导体层(n⁺layer)52，覆盖于第二非晶硅层50之上。As shown in FIG. 6, a dehydrogen treatment (dehydrogen treatment) for about one hour is carried out in a vacuum and high temperature environment to remove hydrogen atoms in the first amorphous silicon layer, and then a recrystallization process (re- crystallizing process) to convert the first amorphous silicon layer 46 into a crystalline silicon (crystalline silicon)layer 48 . In the preferred embodiment of the present invention, the recrystallization process is a laser annealing re-crystallizing process using a laser beam (not shown), and thecrystalline silicon layer 48 is microcrystalline Silicon (micro-crystalline silicon) layer. Afterwards, a second amorphous silicon (second amorphous silicon)layer 50 is formed on thegate 42 first, and then a doped (doped) semiconductor layer (n⁺ layer) 52 is formed to cover the secondamorphous silicon layer 50 .

如图7所示，接着进行第一光蚀工艺(photo-etching-process，PEP)，以去除部分的掺杂半导体层52、第二非晶硅层50与结晶硅层48。之后，于基底40上形成氧化铟锡(indium tin oxide，ITO)层54，并随即进行第二光蚀工艺，以移除部分的氧化铟锡层54。如图8所示，接着，先于基底40上形成由钨、铬、铜、钼或上述各金属的合金所构成的金属层56，再进行第三光蚀工艺，去除部分的金属层56与掺杂半导体层52，以于基底40表面形成该薄膜晶体管的源极58与漏极60，并同时暴露出第二非晶硅层50。As shown in FIG. 7 , a first photo-etching-process (PEP) is then performed to remove part of the dopedsemiconductor layer 52 , the secondamorphous silicon layer 50 and thecrystalline silicon layer 48 . Afterwards, an indium tin oxide (ITO)layer 54 is formed on thesubstrate 40 , and then a second photoetching process is performed to remove part of theITO layer 54 . As shown in FIG. 8 , then, ametal layer 56 made of tungsten, chromium, copper, molybdenum or alloys of the above metals is first formed on thesubstrate 40, and then a third photoetching process is performed to remove part of themetal layer 56 and the metal layer. Thesemiconductor layer 52 is doped to form thesource 58 and thedrain 60 of the thin film transistor on the surface of thesubstrate 40 and expose the secondamorphous silicon layer 50 at the same time.

如图9所示，最后于基底40上形成由氧化硅或氮化硅所构成的钝化层(passivation layer)62，并进行第四光蚀工艺，去除部分的钝化层62，以完成该有机发光二极管显示器的该薄膜晶体管的制作。As shown in FIG. 9, a passivation layer (passivation layer) 62 made of silicon oxide or silicon nitride is finally formed on thesubstrate 40, and a fourth photoetching process is performed to remove part of thepassivation layer 62 to complete the process. Fabrication of this thin-film transistor for organic light-emitting diode displays.

请参考图10，图10为本发明的第二实施例中所形成的该有机发光二极管显示器的该薄膜晶体管的示意图。如图10所示，在本发明的第二实施例中，视产品规格的需要，亦可将第二非晶硅层50省略，如此所形成的该薄膜晶体管则如图10所示。由于其工艺步骤等同于本发明的最佳实施例，故在此不另行赘述。Please refer to FIG. 10 , which is a schematic diagram of the thin film transistor of the OLED display formed in the second embodiment of the present invention. As shown in FIG. 10 , in the second embodiment of the present invention, the secondamorphous silicon layer 50 may also be omitted depending on the requirements of product specifications, and the thin film transistor thus formed is shown in FIG. 10 . Since the process steps are equivalent to the preferred embodiment of the present invention, they will not be repeated here.

相比于已知技术，本发明在制作该薄膜晶体管的过程中，先进行该去氢步骤以移除第一非晶硅层46中的氢原子，再由该再结晶工艺而将第一非晶硅层46转化为结晶硅层48，故可消除存在于结晶硅层48中的氢原子与硅原子的键结(Si-H)或硅原子的悬键，并增加结晶硅层48中硅分子的晶粒大小。因此电子在该结晶硅层中具有较高的迁移率(mobility)而不会被该结晶硅层捕捉(trap)，更不会渗入栅极绝缘层44中，即使该薄膜晶体管处于长时间操作的状况下，并不会使该薄膜晶体管因承受一电压应力(voltage stress)而造成该薄膜晶体管的阈值电压(threshold voltage，V_th)升高。该薄膜晶体管的开启电流(turn on current，I_on)因而得以处于一稳定的状态下，使该有机发光二极管显示器保持一定的亮度，确保产品的显示品质。Compared with the known technology, in the process of manufacturing the thin film transistor, the present invention first performs the dehydrogenation step to remove the hydrogen atoms in the first amorphous silicon layer 46, and then the first amorphous silicon layer 46 is formed by the recrystallization process. The crystalline silicon layer 46 is converted into acrystalline silicon layer 48, so the bonding (Si-H) of hydrogen atoms and silicon atoms or the dangling bonds of silicon atoms existing in thecrystalline silicon layer 48 can be eliminated, and the amount of silicon in thecrystalline silicon layer 48 can be increased. The grain size of the molecule. Therefore, electrons have higher mobility (mobility) in the crystalline silicon layer and will not be caught by the crystalline silicon layer (trap), and will not penetrate into thegate insulating layer 44 even if the thin film transistor is operated for a long time. Under the condition, the threshold voltage (threshold voltage, V_th ) of the thin film transistor will not increase due to a voltage stress. The turn-on current (I_on ) of the thin film transistor is therefore in a stable state, so that the OLED display can maintain a certain brightness and ensure the display quality of the product.

以上所述仅本发明的较佳实施例，凡依本发明权利要求所做的各种变化与修饰，皆应属本发明专利的涵盖范围。The above descriptions are only preferred embodiments of the present invention, and all changes and modifications made according to the claims of the present invention shall fall within the scope of the patent of the present invention.

图示的符号说明Illustration of symbols

10  玻璃基底         12  栅极10glass substrate 12 grid

14  栅极绝缘层       16  非晶硅层14Gate insulating layer 16 Amorphous silicon layer

16  非晶硅层         18  掺杂半导体层16Amorphous silicon layer 18 Doped semiconductor layer

20  氧化铟锡层       22  金属层20 Indiumtin oxide layer 22 Metal layer

24  源极             26  漏极24Source 26 Drain

28  钝化层           40  基底28passivation layer 40 substrate

42  栅极             44  栅极绝缘层42Gate 44 Gate insulating layer

46  第一非晶硅层     48  结晶硅层46 firstamorphous silicon layer 48 crystalline silicon layer

50  第二非晶硅层     52  掺杂半导体层50 secondamorphous silicon layer 52 doped semiconductor layer

54  氧化铟锡层       56  金属层54 Indiumtin oxide layer 56 Metal layer

58  源极             60  漏极58Source 60 Drain

62  钝化层62 passivation layer

Claims (21)

Translated fromChinese

1.一种形成有机发光二极管显示器的薄膜晶体管的方法，该方法包含下列步骤：1. A method for forming a thin film transistor of an organic light emitting diode display, the method comprising the following steps:提供基底；provide the basis;于该基底上沉积第一金属层；depositing a first metal layer on the substrate;对该第一金属层进行第一光蚀工艺，以于该基底表面形成该薄膜晶体管的一栅极；performing a first photoetching process on the first metal layer to form a gate of the thin film transistor on the surface of the substrate;依序于该栅极上形成栅极绝缘层和第一非晶硅层；sequentially forming a gate insulating layer and a first amorphous silicon layer on the gate;进行去氢步骤，以移除该第一非晶硅层中的氢原子；performing a dehydrogenation step to remove hydrogen atoms in the first amorphous silicon layer;进行再结晶工艺，以将该第一非晶硅层转化为结晶硅层；performing a recrystallization process to convert the first amorphous silicon layer into a crystalline silicon layer;于该栅极上形成第二非晶硅层；forming a second amorphous silicon layer on the gate;于该栅极上形成掺杂半导体层；forming a doped semiconductor layer on the gate;进行第二光蚀工艺，以去除部分的该掺杂半导体层、该第二非晶硅层与该结晶硅层；performing a second photoetching process to remove part of the doped semiconductor layer, the second amorphous silicon layer, and the crystalline silicon layer;于该基底上形成第二金属层；forming a second metal layer on the substrate;进行第三光蚀工艺，以于该基底表面形成该薄膜晶体管的源极与漏极，并同时去除部分的该掺杂半导体层，以暴露出该第二非晶硅层；以及performing a third photoetching process to form the source and drain of the thin film transistor on the surface of the substrate, and simultaneously remove part of the doped semiconductor layer to expose the second amorphous silicon layer; and于该基底上形成钝化层。A passivation layer is formed on the substrate.2.如权利要求1的方法，其中该基底包含玻璃基底、石英基底或塑胶基底。2. The method of claim 1, wherein the substrate comprises a glass substrate, a quartz substrate or a plastic substrate.3.如权利要求1的方法，其中该第一与该第二金属层包含钨、铬、铜、钼或上述各金属的合金。3. The method of claim 1, wherein the first and the second metal layers comprise tungsten, chromium, copper, molybdenum or alloys thereof.4.如权利要求1的方法，其中该栅极绝缘层包含氧化硅、氮化硅或氮氧化硅，而该钝化层则包含氧化硅或氮化硅。4. The method of claim 1, wherein the gate insulating layer comprises silicon oxide, silicon nitride or silicon oxynitride, and the passivation layer comprises silicon oxide or silicon nitride.5.如权利要求4的方法，其中该栅极绝缘层由等离子体增强化学气相沉积工艺所形成。5. The method of claim 4, wherein the gate insulating layer is formed by a plasma enhanced chemical vapor deposition process.6.如权利要求1的方法，其中该去氢步骤于真空高温的环境下进行，历时一小时。6. The method of claim 1, wherein the dehydrogenation step is carried out in a vacuum and high temperature environment for one hour.7.如权利要求1的方法，其中该再结晶工艺为激光回火再结晶工艺。7. The method of claim 1, wherein the recrystallization process is a laser tempering recrystallization process.8.如权利要求1的方法，其中该结晶硅层包含微晶硅层。8. The method of claim 1, wherein the crystalline silicon layer comprises a microcrystalline silicon layer.9.一种有机发光二极管显示器的薄膜晶体管的制作方法，该薄膜晶体管形成于该有机发光二极管显示器的基底上，该方法包含下列步骤：9. A method for manufacturing a thin film transistor of an organic light emitting diode display, the thin film transistor is formed on a substrate of the organic light emitting diode display, the method comprising the following steps:于该基底表面形成该薄膜晶体管的栅极；forming the gate of the thin film transistor on the surface of the substrate;依序于该栅极上形成栅极绝缘层和非晶硅层；sequentially forming a gate insulating layer and an amorphous silicon layer on the gate;进行去氢步骤，以移除该非晶硅层中的氢原子；performing a dehydrogenation step to remove hydrogen atoms in the amorphous silicon layer;进行再结晶工艺，以将该非晶硅层转化为结晶硅层；performing a recrystallization process to convert the amorphous silicon layer into a crystalline silicon layer;于该栅极上形成掺杂半导体层；forming a doped semiconductor layer on the gate;进行第一光蚀工艺，以去除部分的该掺杂半导体层与该结晶硅层；performing a first photoetching process to remove part of the doped semiconductor layer and the crystalline silicon layer;于该基底上形成金属层；forming a metal layer on the substrate;进行第二光蚀工艺，以于该基底表面形成该薄膜晶体管的源极与漏极，并同时去除部分的该掺杂半导体层，以暴露出该结晶硅层；以及performing a second photoetching process to form the source and drain of the thin film transistor on the surface of the substrate, and simultaneously remove part of the doped semiconductor layer to expose the crystalline silicon layer; and于该基底上形成钝化层。A passivation layer is formed on the substrate.10.如权利要求9的方法，其中该基底包含玻璃基底、石英基底或塑胶基底。10. The method of claim 9, wherein the substrate comprises a glass substrate, a quartz substrate or a plastic substrate.11.如权利要求9的方法，其中该栅极与该金属层是包含钨、铬、铜、钼或上述各金属的合金。11. The method of claim 9, wherein the gate and the metal layer comprise tungsten, chromium, copper, molybdenum or alloys of the above metals.12.如权利要求9的方法，其中该栅极绝缘层是包含氧化硅、氮化硅或氮氧化硅，而该钝化层则是包含有氧化硅或氮化硅。12. The method of claim 9, wherein the gate insulating layer comprises silicon oxide, silicon nitride or silicon oxynitride, and the passivation layer comprises silicon oxide or silicon nitride.13.如权利要求12的方法，其中该栅极绝缘层由进行等离子体增强化学气相沉积工艺所形成。13. The method of claim 12, wherein the gate insulating layer is formed by performing a plasma enhanced chemical vapor deposition process.14.如权利要求9的方法，其中该去氢步骤于真空高温的环境下进行，历时一小时。14. The method of claim 9, wherein the dehydrogenation step is carried out in a vacuum and high temperature environment for one hour.15.如权利要求9的方法，其中该再结晶工艺是为激光回火再结晶工艺。15. The method of claim 9, wherein the recrystallization process is a laser tempering recrystallization process.16.如权利要求9的方法，其中该结晶硅层是包含微晶硅层。16. The method of claim 9, wherein the crystalline silicon layer comprises a microcrystalline silicon layer.17.一种有机发光二极管显示器的薄膜晶体管，该薄膜晶体管设于该有机发光二极管显示器的基底上，该薄膜晶体管包含有：17. A thin film transistor of an organic light emitting diode display, the thin film transistor is disposed on a substrate of the organic light emitting diode display, and the thin film transistor comprises:形成在该基底上的栅极；a gate formed on the substrate;形成在该栅极上的栅极绝缘层；a gate insulating layer formed on the gate;形成在该栅极绝缘层上的结晶硅层；a crystalline silicon layer formed on the gate insulating layer;形成在该结晶硅层上的非晶硅层；an amorphous silicon layer formed on the crystalline silicon layer;形成在该非晶硅层上的掺杂半导体层，部分的该掺杂半导体层被去除，用以暴露出部分的该非晶硅层；a doped semiconductor layer formed on the amorphous silicon layer, part of the doped semiconductor layer is removed to expose a part of the amorphous silicon layer;形成在该掺杂半导体层上的源极与漏极；以及a source and a drain formed on the doped semiconductor layer; and于该基底上形成的钝化层，覆盖于该源极与该漏极的表面。The passivation layer formed on the base covers the surface of the source and the drain.18.如权利要求17的薄膜晶体管，其中该基底包含玻璃基底、石英基底或塑胶基底。18. The thin film transistor of claim 17, wherein the substrate comprises a glass substrate, a quartz substrate or a plastic substrate.19.如权利要求17的薄膜晶体管，其中该栅极、该源极与该漏极包含钨、铬、铜、钼或上述各金属的合金。19. The thin film transistor of claim 17, wherein the gate, the source and the drain comprise tungsten, chromium, copper, molybdenum or alloys of the above metals.20.如权利要求17的薄膜晶体管，其中该栅极绝缘层是包含有氧化硅、氮化硅或氮氧化硅，而该钝化层则是包含有氧化硅或氮化硅。20. The thin film transistor of claim 17, wherein the gate insulating layer comprises silicon oxide, silicon nitride or silicon oxynitride, and the passivation layer comprises silicon oxide or silicon nitride.21.如权利要求17的薄膜晶体管，其中该结晶硅层是包含有微晶硅层。21. The thin film transistor of claim 17, wherein the crystalline silicon layer comprises a microcrystalline silicon layer.

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