Detailed Description
For the purposes of clarity, technical solutions and advantages of the present disclosure, the following further details the embodiments of the present disclosure with reference to the accompanying drawings.
Unless defined otherwise, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The terms "first," "second," "third," and the like in the description and in the claims, do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. Likewise, the terms "a" or "an" and the like do not denote a limitation of quantity, but rather denote the presence of at least one. The word "comprising" or "comprises", and the like, is intended to mean that elements or items that are present in front of "comprising" or "comprising" are included in the word "comprising" or "comprising", and equivalents thereof, without excluding other elements or items. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", "top", "bottom" and the like are used only to indicate relative positional relationships, which may be changed accordingly when the absolute position of the object to be described is changed.
In the related art, micro LED three-color pixel chips are transferred onto a flexible substrate by mass transfer, then the pixel chips are transferred onto a circuit substrate in batches by bonding with a glue material with huge viscosity, and then unit packaging is performed.
Among them, the manner of transferring the pixel chip onto the substrate in a huge amount generally includes two ways. Firstly, the laser COW (Chip on Wafer) rotates directly, the pixel chip and the substrate are directly stripped through laser irradiation, and epitaxial materials such as GaN between the pixel chip and the substrate are required to be decomposed by the laser in the stripping process, so that the purpose of separately transferring three-color pixel chips at intervals is realized. In the scheme, larger laser energy is required for decomposing the GaN material, so that the landing point of the pixel chip is extremely unstable and accurate, and the yield is difficult to reach the mass production level.
And secondly, performing mass transfer of the pixel chip by adopting FCOC. In the preparation FCOC process, firstly bonding a wafer with a plurality of pixel chips on a temporary substrate to enable the pixel chips to be stripped from a substrate of the wafer, enabling electrodes of the pixel chips to face the temporary substrate, and then bonding the pixel chips on the temporary substrate on a carrier plate to enable the electrodes of the pixel chips to be far away from the carrier plate, so that the subsequent laser stripping of FCOC is facilitated, and the mass transfer of the pixel chips is realized. According to the scheme, although epitaxial materials between the pixel chip and the substrate do not need to be decomposed by laser, the pixel chip can be stably arranged at the corresponding position on the substrate. However, in the process of preparing FCOC, the pixel chip needs to be transferred twice, and each stripping process of the pixel chip needs to be irradiated by laser, and the laser irradiation can have a great influence on the electrical property of the pixel chip, so that the pixel chip leaks electricity or generates defects, and the yield of mass transfer is affected.
For this reason, the embodiments of the present disclosure provide a method for mass transfer of light emitting diodes. Fig. 1 is a flow chart of a method for mass transfer of a light emitting diode according to an embodiment of the present disclosure. As shown in fig. 1, the mass transfer method includes:
Step 101, transferring different pixel chips 20 onto the first adhesive layer 110 of the first temporary substrate 11 by adopting a laser stripping mode, so that the electrodes of the pixel chips 20 are far away from the first adhesive layer 110.
Step 102, bonding the pixel chip 20 of the first temporary substrate 11 to the second adhesive layer 120 of the second temporary substrate 12, and connecting the electrode of the pixel chip 20 with the second adhesive layer 120.
Wherein the second glue layer 120 has a viscosity greater than that of the first glue layer 110.
Step 103, removing the first temporary substrate 11 and the first adhesive layer 110, bonding the pixel chip 20 of the second temporary substrate 12 to the third adhesive layer 130 of the circuit substrate 13, and keeping the electrode of the pixel chip 20 away from the third adhesive layer 130.
Wherein the tackiness of the third glue layer 130 is greater than the tackiness of the second glue layer 120.
In the bulk transfer method provided in the embodiment of the disclosure, when transferring the pixel chips 20, firstly, different pixel chips 20 are transferred onto the first adhesive layer 110 of the first temporary substrate 11, then the pixel chips 20 of the first temporary substrate 11 are bonded onto the second adhesive layer 120 of the second temporary substrate 12, since the second adhesive layer 120 has higher viscosity than the first adhesive layer 110, the pixel chips 20 can be peeled off from the first temporary substrate 11 more easily by using the second adhesive layer 120 with higher viscosity and transferred onto the second temporary substrate 12, and then the pixel chips 20 of the second temporary substrate 12 are bonded onto the third adhesive layer 130 of the circuit substrate 13, since the third adhesive layer 130 has higher viscosity than the second adhesive layer 120, the pixel chips 20 can be peeled off from the second temporary substrate 12 more easily by using the third adhesive layer 130 with higher viscosity and transferred onto the circuit substrate 13, thereby achieving the purpose of transferring the pixel chips 20 onto the circuit substrate 13.
Compared with the laser stripping mode in the related art, the embodiment of the disclosure realizes the transfer of the pixel chip by using the viscosity gradient, does not need to additionally carry out laser stripping, reduces the laser irradiation times, can greatly reduce the influence on the electrical property of the pixel chip, and finally ensures the yield of mass transfer. And the pixel chip is directly transferred through the adhesive force difference, so that the laser equipment is not required to be stripped, and the transfer efficiency is higher.
Fig. 2 is a flow chart of another method for transferring the bulk of a light emitting diode according to an embodiment of the present disclosure.
As shown in fig. 2, the mass transfer method includes:
step 201, bonding the wafer 15 to the carrier plate 14, so that the electrodes of the pixel chips 20 of the wafer 15 are connected to the photosensitive adhesive layer 140 of the carrier plate 14.
Step 202, irradiating the wafer 15 with laser light to separate the pixel chip 20 from the substrate of the wafer 15.
Fig. 3 is a transition state diagram of a light emitting device provided in an embodiment of the present disclosure. As shown in fig. 3, the wafer 15 is bonded on the photosensitive adhesive layer 140 of the carrier 14, such that the photosensitive adhesive layer 140 is connected to the electrode of the pixel chip 20 on the wafer 15, and then the wafer 15 is irradiated by the laser, such that the epitaxial material between the pixel chip 20 and the substrate is decomposed, so as to peel the substrate from the pixel chip 20.
Compared with the related art, when the pixel chip 20 and the substrate are peeled, since the pixel chip 20 is fixed on the carrier plate 14 through the photosensitive adhesive layer 140, even if the laser decomposed epitaxial material is unstable, the problem of inaccurate landing point of the pixel chip 20 on the carrier plate 14 can be avoided, and thus the yield of mass transfer can be effectively improved.
The carrier plate 14 may be a sapphire substrate or a glass substrate, for example.
In the embodiment of the present disclosure, three kinds of carrier boards 14 may be prepared in steps 201 to 202, and pixel chips 20 with different colors are respectively arranged on the three kinds of carrier boards 14.
Alternatively, the pixel chips 20 of different colors include a first pixel chip 21, a second pixel chip 22, and a third pixel chip 23, and the light emission colors of the first pixel chip 21, the second pixel chip 22, and the third pixel chip 23 are all different.
In the embodiment of the present disclosure, the first pixel chip 21 may be a red light emitting pixel chip, the second pixel chip 22 may be a green light emitting pixel chip, and the third pixel chip 23 may be a blue light emitting pixel chip.
In an embodiment of the disclosure, each pixel chip includes an epitaxial layer, a passivation layer, and an electrode. The epitaxial layer is positioned on the surface of the substrate, the epitaxial layer comprises a p-type layer, a light-emitting layer and an n-type layer which are sequentially stacked, the n-type layer is provided with a groove exposing the p-type layer, the passivation layer is positioned on the surface of the n-type layer and in the groove, and the passivation layer is provided with a through hole exposing the n-type layer and the groove.
Wherein, the surface of the passivation layer is provided with a first electrode 41 and a second electrode 42, and the first electrode 41 and the second electrode 42 are respectively connected with the n-type layer and the p-type layer through two through holes.
In the embodiment of the present disclosure, the plurality of pixel chips includes a first pixel chip 21 emitting red light, a second pixel chip 22 emitting green light, and a third pixel chip 23 emitting blue light.
The difference between the first pixel chip 21, the second pixel chip 22, and the third pixel chip 23 is that the light emission colors of the epitaxial layers are different.
For the first pixel chip 21, the epitaxial layer is a red epitaxial layer. For the second pixel chip 22, the epitaxial layer is a green epitaxial layer. For the third pixel chip 23, the epitaxial layer is a blue epitaxial layer.
The red light epitaxial layer comprises a first p-type layer, a first light emitting layer and a first n-type layer which are sequentially stacked.
In the red light epitaxial layer, the first p-type layer includes a p-type AlInP layer.
Wherein the first light emitting layer includes AlGaInP quantum well layers and AlGaInP quantum barrier layers alternately grown, wherein the Al content in the AlGaInP quantum well layers and the AlGaInP quantum barrier layers is different. The first light emitting layer may include an AlGaInP quantum well layer and an AlGaInP quantum barrier layer of 3 to 8 periods alternately stacked.
Wherein the first n-type layer comprises an n-type AlGaInP current spreading layer.
In an embodiment of the disclosure, the green epitaxial layer includes a second p-type layer, a second light emitting layer, and a second n-type layer, which are sequentially stacked.
In the green epitaxial layer, the second p-type layer includes a p-type GaN layer.
Wherein the second light emitting layer comprises an InGaN quantum well layer and a GaN quantum barrier layer which are alternately grown. The second light emitting layer may include InGaN quantum well layers and GaN quantum barrier layers of 3 to 8 periods alternately stacked.
Wherein the second n-type layer comprises an n-type GaN layer.
In an embodiment of the disclosure, the blue light epitaxial layer includes a third p-type layer, a third light emitting layer, and a third n-type layer, which are sequentially stacked.
In the blue light epitaxial layer, the third p-type layer includes a p-type GaN layer.
Wherein the third light emitting layer may include an InGaN quantum well layer and a GaN quantum barrier layer alternately grown. The third light emitting layer may include InGaN quantum well layers and GaN quantum barrier layers of 3 to 8 periods alternately stacked.
Wherein the third n-type layer comprises an n-type GaN layer.
Alternatively, the thickness of the pixel chip is 2 μm to 10 μm.
Illustratively, the thickness of the red epitaxial layer is 5 μm, the thickness of the green epitaxial layer is 8 μm, and the thickness of the blue epitaxial layer is 6 μm.
Step 203, transferring different pixel chips onto the first adhesive layer 110 of the first temporary substrate 11 by laser stripping, so that the electrodes of the pixel chips are far away from the first adhesive layer 110.
In the embodiment of the disclosure, the pixel chips with three different colors may be transferred onto the first temporary substrate 11 by using a laser stripping method. That is, three kinds of carrier plates 14 having different color pixel chips are irradiated with laser light so that the different color pixel chips can fall onto corresponding positions of the first temporary substrate 11.
Specifically, as shown in fig. 4, the laser decomposing may be performed to decompose the photosensitive adhesive layer 140 on the carrier plate 14, so that the pixel chip falls from the carrier plate 14 onto the first adhesive layer 110 of the first temporary substrate 11. Fig. 4 illustrates that the laser breaks down the photosensitive glue layer 140 so that the first pixel chip 21 emitting red light can fall onto the corresponding position of the first temporary substrate 11.
In the above implementation manner, the laser separation of the photosensitive adhesive layer 140 is easier than that of the epitaxial material, so that larger laser energy is not needed, and thus, the landing point of the pixel chip is more stable and accurate, and the yield of mass transfer is improved.
Illustratively, the photosensitive adhesive layer 140 may be an epoxy acrylate layer, a urethane acrylate layer, or a polyester acrylate layer.
Alternatively, when the photoresist layer 140 is decomposed using a laser, the wavelength of the laser is controlled to 248nm, 266nm or 355nm, and the photoresist layer 140 is irradiated with an excimer laser or a solid laser.
The excimer laser is a gas pulse laser, and the mixed gas of inert gas and halogen gas is excited to generate short wavelength laser with ultraviolet band, so that the excimer laser has cold light source characteristic and high precision cutting capability.
The wavelength of the excimer laser may be 248nm, for example. For use in a lithographic machine for chip fabrication, nanoscale circuit patterns are achieved by high-precision exposure.
The solid laser uses crystal, glass or ceramic as gain medium, and is excited by pumping source to generate laser, so that it has the characteristics of high power, high stability and tunable wavelength.
The wavelength of the solid-state laser may be 266nm or 355nm, for example.
When the wavelength of the solid laser is 266nm, the solid laser is used for stripping the LED sapphire substrate, and the GaN layer is decomposed through high absorptivity, so that the luminous efficiency is improved. When the wavelength of the solid laser is 266nm, the solid laser is used for separating the polyimide layer in the flexible OLED manufacturing, and replaces the traditional excimer laser so as to reduce the maintenance cost.
After step 203, the bulk transfer method may further include etching away the first glue layer 110 between adjacent pixel chips.
Illustratively, the residual glue of the channel between the pixel chips can be removed by adopting an ICP etching mode, and meanwhile, the viscosity between the pixel chips and the first temporary substrate 11 can be weakened, so that the next transfer is facilitated.
Step 204, bonding the pixel chip of the first temporary substrate 11 to the second adhesive layer 120 of the second temporary substrate 12, so that the electrode of the pixel chip is connected with the second adhesive layer 120.
As shown in fig. 5, a second adhesive layer 120 is formed on the surface of the second temporary substrate 12, and the second temporary substrate 12 is capped on the pixel chip on the surface of the first temporary substrate 11 from above the first temporary substrate 11, so that the second adhesive layer 120 is connected to the electrode of the pixel chip, and the first temporary substrate is removed.
Wherein the second glue layer 120 has a viscosity greater than that of the first glue layer 110. In this way, the pixel chip can be adhered to the first temporary substrate 11 more easily by using the stronger adhesion of the second adhesive layer 120, so that the pixel chip is prevented from being peeled off from the adhesive layer by adopting a laser decomposition mode, and the frequency of irradiating the pixel chip by laser can be reduced.
Illustratively, the second adhesive layer 120 has a tackiness that is 2 to 3 times the tackiness of the first adhesive layer 110. For example, the ratio of the adhesive to the curing agent in the first adhesive layer 110 is 9:1 to 11:1, and the ratio of the adhesive to the curing agent in the second adhesive layer 120 is 13:1 to 15:1. By controlling the ratio of the adhesive to the curing agent within the above range, the tackiness of the second adhesive layer 120 can be made 2 to 3 times that of the first adhesive layer 110.
Illustratively, the first gum layer 110 may be a 10:1 ratio of adhesive to curing agent, a Dow Corning Sylgard 184 gum.
Illustratively, the second glue layer 120 may be a 14:1 ratio of glue to hardener, a dycorning Sylgard 184 glue, or a dycorning 109 glue.
After step 204, the bulk transfer method may further include etching away the second glue layer 120 between adjacent pixel chips.
Illustratively, the residual glue on the surface of the electrode and the channel between the pixel chips can be removed by adopting an ICP etching mode, and the process can clean the substrate, and meanwhile, the viscosity between the pixel chips and the second temporary substrate 12 can be weakened, so that the next transfer is facilitated.
Step 205, bonding the pixel chip of the second temporary substrate 12 to the third adhesive layer 130 of the circuit substrate 13, so that the electrode of the pixel chip is far away from the third adhesive layer 130.
As shown in fig. 6, the surface of the circuit substrate 13 is first formed with a third adhesive layer 130, and the circuit substrate 13 is covered on the pixel chip on the surface of the second temporary substrate 12 from below the second temporary substrate 12, so that the third adhesive layer 130 is connected to the pixel chip, and the second temporary substrate is removed.
Wherein the tackiness of the third glue layer 130 is greater than the tackiness of the second glue layer 120. In this way, the pixel chip can be adhered to the second temporary substrate 12 more easily by using the stronger adhesiveness of the third adhesive layer 130, so that the pixel chip is prevented from being peeled off from the adhesive layer by adopting a laser decomposition mode, and the frequency of irradiating the pixel chip by laser can be reduced.
The third adhesive layer 130 is pre-cured before bonding, and the viscosity of the third adhesive layer 130 is controlled to avoid excessive viscosity.
Illustratively, the tackiness of the third adhesive layer 130 is 6 to 10 times the tackiness of the first adhesive layer 110. For example, the third glue layer 130 is a non-conductive glue layer. The non-conductive adhesive layer has a viscosity of 6 to 10 times that of the 10:1 Dow Corning Sylgard184 adhesive.
After step 205, the bulk transfer method may further include etching away the third glue layer 130 between adjacent pixel chips.
Illustratively, the residual glue on the surface of the electrode and the channel between the pixel chips can be removed by adopting an ICP etching mode, so that the substrate can be cleaned, and the subsequent formation of the packaging glue on the circuit substrate 13 is facilitated.
Step 206, forming a packaging adhesive layer 50 on the surface of the circuit substrate 13 to fill and wrap each pixel chip.
Specifically, the method comprises the steps of coating packaging glue on the surface of the circuit substrate 13, and curing the packaging glue to obtain a packaging glue layer 50 after the packaging glue fills gaps among the pixel chips.
Optionally, the absorbance of the encapsulation glue layer 50 is greater than or equal to 0.8. The packaging adhesive layer 50 with the absorbance larger than or equal to 0.8 is used for wrapping the pixel chip, so that lateral light emitting of the pixel chip can be shielded, and the front light emitting effect of the light emitting device is improved.
Illustratively, the encapsulation glue layer 50 may be black, which absorbs light more easily, to avoid more light exiting sideways from the pixel chip. In addition, in the process of injecting the packaging glue, the black packaging glue is easier to observe, so that a technician can accurately judge whether the packaging glue completely wraps each pixel chip.
Optionally, curing the encapsulation glue to obtain the encapsulation glue layer 50 may also be included in both implementations.
The first curing mode is heat curing. Specifically, the method comprises the steps of heating and solidifying the packaging glue at a temperature of above 50 ℃, and baking the packaging glue at a temperature of above 150 ℃ for 1-2 h to obtain the packaging glue layer 50.
The temperature is controlled to be raised to be above 50 ℃ firstly, so that the curing speed can be increased, the rapid curing of the packaging adhesive is realized, and then the temperature is controlled to be raised to be above 150 ℃ to bake the packaging adhesive, so that the packaging adhesive can be completely cured.
The second curing mode is ultraviolet light irradiation curing. Specifically, the encapsulation adhesive layer 50 is obtained by irradiating the encapsulation adhesive with ultraviolet light for 1min to 10 min.
The ultraviolet irradiation mode is adopted to cure the packaging adhesive more quickly, so that the preparation efficiency of the packaging adhesive layer 50 can be improved.
An ISO etch may also be performed after step 206 to etch the apparent dimensions of the light emitting devices and to obtain a plurality of light emitting devices by laser scribing.
The embodiment of the present disclosure provides a light emitting device including a circuit substrate 13, a plurality of pixel chips, and a packaging adhesive layer 50. The plurality of pixel chips are transferred onto the circuit substrate 13 using the bulk transfer method of the light emitting diode as described above. Fig. 7 is a top view of a light emitting device provided by an embodiment of the present disclosure. Fig. 7 illustrates a state before the encapsulation adhesive layer 50 is formed on the circuit substrate 13. Fig. 8 is a top view of a light emitting device provided by an embodiment of the present disclosure. Fig. 8 shows a state in which the encapsulation adhesive layer 50 is formed on the circuit board 13.
As shown in fig. 7 and 8, the light emitting device comprises a circuit substrate 13, a plurality of pixel chips and a packaging adhesive layer 50, wherein the pixel chips are all positioned on the surface of the circuit substrate 13, the packaging adhesive layer 50 is positioned on the surface of the circuit substrate 13 and wraps each pixel chip, and the surface, far away from the circuit substrate 13, of the packaging adhesive layer 50 is flush with the surface, far away from the circuit substrate 13, of the pixel chips.
Alternatively, as shown in FIGS. 7 and 8, the plurality of pixel chips includes a first pixel chip 21, a second pixel chip 22, and a third pixel chip 23, and the light emission colors of the first pixel chip 21, the second pixel chip 22, and the third pixel chip 23 are different.
Optionally, as shown in fig. 7, the light emitting device further includes a first pad 31, a second pad 32, a third pad 33, and a fourth pad 34. The first pad 31, the second pad 32, the third pad 33, and the fourth pad 34 are all located on the surface of the circuit substrate 13 and connected to the pads of the circuit substrate 13.
As shown in fig. 7, the first electrode 41 of the first pixel chip 21, the first electrode 41 of the second pixel chip 22, and the first electrode 41 of the third pixel chip 23 are all connected to the first pad 31.
The first pads 31 are thus connected to the first electrodes 41 of the respective pixel chips, allowing the first pads 31 to serve as common pads, thereby avoiding the provision of a greater number of pads on the flat layer to reduce the size of the light emitting device.
As shown in fig. 7, the second electrode 42 of the first pixel chip 21 is connected to the second pad 32, the second electrode 42 of the second pixel chip 22 is connected to the third pad 33, and the second electrode 42 of the third pad 33 is connected to the fourth pad 34.
In the embodiment of the disclosure, a pad is separately provided for each pixel chip, and whether the pixel chip emits light can be controlled by controlling the manner of electrifying the pad provided corresponding to the pixel chip.
In the embodiment of the present disclosure, the plurality of pixel chips includes a first pixel chip 21 emitting red light, a second pixel chip 22 emitting green light, and a third pixel chip 23 emitting blue light.
The difference between the first pixel chip 21, the second pixel chip 22, and the third pixel chip 23 is that the light emission colors of the epitaxial layers are different.
For the first pixel chip 21, the epitaxial layer is a red epitaxial layer. For the second pixel chip 22, the epitaxial layer is a green epitaxial layer. For the third pixel chip 23, the epitaxial layer is a blue epitaxial layer.
The red light epitaxial layer comprises a first p-type layer, a first light emitting layer and a first n-type layer which are sequentially stacked.
In the red light epitaxial layer, the first p-type layer includes a p-type AlInP layer.
Wherein the first light emitting layer includes AlGaInP quantum well layers and AlGaInP quantum barrier layers alternately grown, wherein the Al content in the AlGaInP quantum well layers and the AlGaInP quantum barrier layers is different. The first light emitting layer may include an AlGaInP quantum well layer and an AlGaInP quantum barrier layer of 3 to 8 periods alternately stacked.
Wherein the first n-type layer comprises an n-type AlGaInP current spreading layer.
In an embodiment of the disclosure, the green epitaxial layer includes a second p-type layer, a second light emitting layer, and a second n-type layer, which are sequentially stacked.
In the green epitaxial layer, the second p-type layer includes a p-type GaN layer.
Wherein the second light emitting layer comprises an InGaN quantum well layer and a GaN quantum barrier layer which are alternately grown. The second light emitting layer may include InGaN quantum well layers and GaN quantum barrier layers of 3 to 8 periods alternately stacked.
Wherein the second n-type layer comprises an n-type GaN layer.
In an embodiment of the disclosure, the blue light epitaxial layer includes a third p-type layer, a third light emitting layer, and a third n-type layer, which are sequentially stacked.
In the blue light epitaxial layer, the third p-type layer includes a p-type GaN layer.
Wherein the third light emitting layer may include an InGaN quantum well layer and a GaN quantum barrier layer alternately grown. The third light emitting layer may include InGaN quantum well layers and GaN quantum barrier layers of 3 to 8 periods alternately stacked.
Wherein the third n-type layer comprises an n-type GaN layer.
Alternatively, the thickness of the pixel chip is 2 μm to 10 μm.
Illustratively, the thickness of the red epitaxial layer is 5 μm, the thickness of the green epitaxial layer is 8 μm, and the thickness of the blue epitaxial layer is 6 μm.
The substrate may be a sapphire substrate or a glass substrate, for example.
Alternatively, the passivation layer may be a silicon oxide layer. Wherein the thickness of the silicon oxide layer may be 3 μm to 30 μm.
The passivation layer may be 10 μm thick, for example.
Alternatively, the passivation layer may be a distributed bragg reflector Distributed Bragg Reflection, referred to as DBR layer, comprising a plurality of periodically alternating layers of SiO2 and TiO2. And the number of periods of the DBR layer may be between 20 and 50. For example, the number of periods of the DBR layer is 32.
The thickness of the SiO2 layer in the DBR layer may be 800 to 1200 angstroms, and the thickness of the TiO2 layer may be 500 to 900 angstroms.
In the embodiment of the present disclosure, the first electrode 41 of each pixel chip is connected to the n-type layer, and the second electrode 42 of each pixel chip is connected to the p-type layer. And the first electrode 41 is connected to the first pad 31, so that the first pad 31 is a negative electrode pad, and accordingly, the second pad 32, the third pad 33, and the fourth pad 34 are positive electrode pads.
Embodiments of the present disclosure provide a display panel including a plurality of light emitting devices, a driving integrated circuit (INTEGRATED CIRCUIT, abbreviated as IC), and a circuit board as described above, each of the plurality of light emitting devices and the driving IC being located on the circuit board.
Illustratively, a plurality of light emitting device arrays are arranged on a circuit board.
The driving IC is located on the circuit board and is electrically connected with the driving wiring on the circuit board, and the welding spot blocks of the plurality of light emitting devices are also electrically connected with the driving wiring on the circuit board. The driving IC can control each light emitting device through the driving wiring.
The foregoing disclosure is not intended to be limited to any form of embodiment, but is not intended to limit the disclosure, and any simple modification, equivalent changes and adaptations of the embodiments according to the technical principles of the disclosure are intended to be within the scope of the disclosure, as long as the modifications or equivalent embodiments are possible using the technical principles of the disclosure without departing from the scope of the disclosure.